CN102738267A - Solar battery with superlattices and manufacturing method thereof - Google Patents
Solar battery with superlattices and manufacturing method thereof Download PDFInfo
- Publication number
- CN102738267A CN102738267A CN2012102038432A CN201210203843A CN102738267A CN 102738267 A CN102738267 A CN 102738267A CN 2012102038432 A CN2012102038432 A CN 2012102038432A CN 201210203843 A CN201210203843 A CN 201210203843A CN 102738267 A CN102738267 A CN 102738267A
- Authority
- CN
- China
- Prior art keywords
- gaas
- layer
- superlattice structure
- ganas
- ingaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a solar battery with superlattices. The solar battery comprises a first GaAs layer and an active region, wherein the active region is arranged on the naked surface of the first GaAs layer and comprises first and second GaNAs/InGaAs superlattices; the second GaNAs/InGaAs superlattice is arranged on the surface of the first GaNAs/InGaAs superlattice; and the thicknesses of InGaAs layers in the first and second GaNAs/InGaAs superlattices are different. The invention also provides a manufacturing method for the solar battery with the superlattices, two kinds of GaNAs/InGaAs superlattices grow on the naked surface of the first GaAs layer to form the active region, and the thicknesses of the InGaAs layers in the two kinds of GaNAs/InGaAs superlattices are different.
Description
Technical field
The present invention relates to area of solar cell, relate in particular to solar cell that has superlattice structure and preparation method thereof.
Background technology
Because solar energy is inexhaustible, is effective replacer of traditional fossil energy, the research of solar cell is more and more deep.In the solar cell field, the GaInP/GaAs multijunction cell has been successfully applied to photovoltaic field, space at present, becomes the outstanding representative that the ground high power concentrator is used again because of its peak efficiency, can form three junction batteries with Ge in addition efficient is further promoted.But the band gap of Ge (0.7eV) is not only in three junction batteries.If can prepare the solar cell of 0.8 ~ 1.4eV, and with GaAs or Ge substrate lattice coupling, conversion efficiency will significantly promote, and can combine Ge to constitute four knots and the above lattice match battery that obtains Ultra-High Efficiency of four knots.
Have the crooked low energy gap InAsN of unusual band gap in recent years, InGaAsN, GaNP and GaNAsP material have received attention.It is found that its band gap of GaAs that has increased small amount of nitrogen is not the increase of expection; Having produced reverse effect on the contrary, thereby caused band gap to reduce rapidly, is not the blue shift of expection; But red shift; This uncommon behavior has caused sizable interest, it is believed that this is a new viewpoint and have potential application space on the materials physics, and these noval chemical compounds are called as rare nitride.Rare nitride has been broken away from traditional I II-V family semiconductor, when nitrogen is inserted into the lattice of group-v element, the performance of material has been produced profound influence, and allowed energy band engineering to further develop.In the GaAs of routine and InP base III-V compounds of group, only add a spot of nitrogen (less than 5%), the result can cause very large band curvature, and this has formed many interesting microelectronics and photovoltaic applications.Except band curvature, a spot of nitrogen also causes the change of band structure, has only 0.5% nitrogen, and the GaP band gap produces from receiving direct variation, and has very strong luminous in the 650nm red range.
Existing at present researcher prepares the GaInNAs solar cell that band gap is 1eV; Like Fig. 1; Comprise substrate layer 101; And the resilient coating 102 that on substrate layer 101, sets gradually, back of the body layer the 103, the one a GaAs layer 104, the 2nd GaAs layer 105 and contact layer 106, but this GaInNAs solar cell current density and open circuit voltage are still lower, and conversion efficiency is not high yet.Adopt the body material of GaInNAs quaternary system; The growth because In, N coexist is easy to generate strain and component and rises and falls, and reduces minority carrier life time; Mobility is not high yet; It is just compound before being collected to absorb the electron-hole pair that photon produced, and has limited electric current output, and the lifting of conversion efficiency is limited.Though have through the superlattice of In, N separation and the solar cell that SQW obtains this band gap, owing to be the superlattice of single barrier layer thickness, when obtaining enough thick active area, be prone to produce misfit dislocation, finally influence the performance of battery.So the researcher attempts to seek other effective ways and breaks through this technical barrier.
Summary of the invention
Technical problem to be solved by this invention is that solar cell that has superlattice structure and preparation method thereof is provided.
In order to address the above problem; The invention provides a kind of solar cell with superlattice structure; Comprise a GaAs layer and an active area, said active area places on the exposed surface of a GaAs layer, and said active area comprises first, second GaNAs/InGaAs superlattice structure; Said the 2nd GaNAs/InGaAs superlattice structure is arranged at GaNAs/InGaAs superlattice structure surface, and the InGaAs layer thickness in said first, second GaNAs/InGaAs superlattice structure is different.
Said solar cell with superlattice structure; Further comprise GaAs battery and GaAs resilient coating; Said GaAs battery places on the exposed surface of GaAs resilient coating; Said GaAs battery comprises an AlGaAs back of the body layer, a GaAs layer, active area, the 2nd GaAs layer and AlGaAs Window layer, wherein the conductiving doping type opposite of the conductiving doping type of a GaAs layer and the 2nd GaAs layer that sets gradually.
Said solar cell with superlattice structure further comprises the substrate layer of Ge or GaAs, and comprises GaAs resilient coating, GaAs battery and the GaAs contact layer that on the substrate layer of Ge or GaAs, is provided with successively.
The periodic regime of said first, second GaNAs/InGaAs superlattice structure is respectively 1 nanometer to 10 nanometer.
In order to address the above problem, the present invention also provides a kind of preparation method with solar cell of superlattice structure, comprises step: 3) at GaAs layer exposed surface growth active area,
Said step 3) further comprises step:
31) at the GaAs laminar surface GaNAs/InGaAs superlattice structure of growing;
32) at a GaNAs/InGaAs superlattice structure superficial growth the 2nd GaNAs/InGaAs superlattice structure;
Wherein, the InGaAs layer thickness in said two kinds of GaNAs/InGaAs superlattice structures is different.
Further comprise step before the said step 3):
1) at the exposed surface growth AlGaAs of a GaAs resilient coating back of the body layer;
2) at the AlGaAs back of the body laminar surface GaAs layer of growing;
Further comprise step after the said step 3): 4) at surfaces of active regions the 2nd GaAs layer of growing;
5) in the 2nd GaAs laminar surface growth AlGaAs Window layer.
Comprise step before the said step 1): at the substrate layer exposed surface growth GaAs of Ge or GaAs resilient coating,
Comprise step after the said step 5): at AlGaAs Window layer superficial growth GaAs contact layer.
The growth pattern of In and N apart is all adopted in the growth of said first, second GaNAs/InGaAs superlattice structure.
The present invention provides solar cell that has superlattice structure and preparation method thereof, and advantage is:
1. above-mentioned solar cell bandgap range is 0.8 ~ 1.4eV, is that the GaInNAs battery of 1eV is compared with traditional band gap, can form more reasonably band gap combination with the GaInP/GaAs and the Ge of technology maturation, can utilize solar spectrum more fully;
2. above-mentioned solar cell adopts short period superlattice as active area, more convenient modulation band gap size;
3. above-mentioned solar cell active area growth adopts In, N to separate growing technology, the defectives such as strain of having avoided traditional GaInNAs battery active area In, N coexistence to cause;
4. the thickness of InGaAs trap layer is different in the above-mentioned solar cell active area, and can obtain enough thick active area like this and not produce the defective that the strain mismatch causes, thus the efficient of raising battery.
Description of drawings
Fig. 1 is traditional GaInNAs solar cell junction composition;
Fig. 2 is a kind of solar battery structure figure with superlattice structure provided by the invention.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to solar cell with superlattice structure provided by the invention and preparation method thereof.
Shown in Figure 2 is described a kind of solar battery structure figure with superlattice structure.
First embodiment
Of the present invention a kind of rare nitrogen nitride (Dilute Nitride) superlattice solar cell with superlattice structure is provided.
Said rare nitrogen nitride superlattice solar cell with superlattice structure; The bandgap range of this solar cell is 0.8eV ~ 1.4eV; The substrate layer 201 that comprises Ge or GaAs; And be included in the GaAs resilient coating 202 that sets gradually on the substrate layer 201 of Ge or GaAs, GaAs battery, GaAs contact layer 209 and go up contact electrode 210, and be included in the following contact electrode 200 on substrate layer 201 exposed surfaces of Ge or GaAs.
The GaAs battery is included on the GaAs resilient coating 202 successively according to the AlGaAs back of the body that is provided with away from substrate layer 201 directions layer the 203, the one a GaAs layer 204; Active area 211, the 2nd GaAs layer 207 and AlGaAs Window layer 208, wherein the conductiving doping type opposite of the conductiving doping type of a GaAs layer 204 and the 2nd GaAs layer 207.The conductiving doping type of the one GaAs layer 204 is N type or P type.
As optional execution mode, a GaAs layer 204 can be used as the base of GaAs battery, and the 2nd GaAs layer 207 can be used as the emitter region of GaAs battery.
The material of said active area 211 is two kinds of GaNAs/InGaAs superlattice structures; I.e. a GaNAs/InGaAs superlattice structure 205 and the 2nd GaNAs/InGaAs superlattice structure 206; And a GaNAs/InGaAs superlattice structure 205 and the 2nd GaNAs/InGaAs superlattice structure 206 are according to being arranged at a GaAs layer 204 surface away from substrate layer 201 directions, wherein the trap layer InGaAs of a GaNAs/InGaAs superlattice structure 205 and the 2nd GaNAs/InGaAs superlattice structure 206 has different thickness.
A said GaNAs/InGaAs superlattice structure 205, the 2nd GaNAs/InGaAs superlattice structure 206 are the short period superlattice structure; And their periodic regimes are respectively 1 nanometer to 10 nanometer; So could guarantee to guarantee that active area 211 does not produce mismatch, guarantee that again active area 211 obtains required energy of absorption edge.
Second embodiment
Above-mentioned preparation method with solar cell of superlattice structure is:
1) utilizes metal organic chemical vapor deposition technology (MOCVD) or molecular beam epitaxy technique (MBE) on the substrate layer 201 of Ge or GaAs, grow successively GaAs resilient coating 202, AlGaAs back of the body layer the 203 and the one a GaAs layer 204;
2) on a GaAs layer 204 exposed surface, utilize MOCVD or MBE growth to have two kinds of GaNAs/InGaAs short period superlattice active areas 211 of different trap layer thicknesses;
3) on superlattice active area 211 exposed surfaces, adopt MOCVD or MBE technology epitaxial growth GaAs emission layer 207, AlGaAs Window layer 208 and GaAs contact layer 209;
4) making on the N type contact electrode 200 under the contact electrode 210 and P type respectively on GaAs contact layer 209 exposed surfaces with on substrate layer 201 exposed surfaces of Ge or GaAs.
Next provide one embodiment of the present of invention.
The present invention provides the preparation method of the solar cell with superlattice structure, and bandgap range is 0.8eV ~ 1.4eV, and the structure of this solar cell is as shown in Figure 2.
Be example on the substrate layer of P type Ge, to use MBE to prepare GaNAs/InGaAs short period superlattice solar cell, concrete preparation method may further comprise the steps:
(1) chooses the substrate layer 201 of P type Ge, and substrate is cleaned, the reaction that the Ge substrate that also can select to exempt to clean directly gets into next step.The employing cooled with liquid nitrogen cooperates down, is controlled at background pressure to be lower than 9 * 10
-10Under the Torr; Substrate layer 201 is placed the reaction chamber of MBE, and substrate layer 201 is heated to 500 ~ 600 ℃, to remove substrate layer 201 surface oxide layers; Then begin the GaAs resilient coating 202 of epitaxial growth non-antiphase domain, use GaAs resilient coating 202 to optimize film quality;
(2) on GaAs resilient coating 202 exposed surfaces, adopt a MBE method growing P-type AlGaAs back of the body layer 203,, stop downward contact electrode 200 diffusions of light induced electron of a GaAs layer 204, increase carrier collection to reduce the compound of light induced electron;
(3) on an AlGaAs back of the body layer 203, adopt MBE method growth carrier concentration to be lower than P type the one GaAs layer 204 of a back of the body layer carrier concentration;
(4) on the exposed surface of a GaAs layer 204, to adopt MBE method growth thickness be the intrinsic of t1/t3 nanometer and have a short-period GaNAs/InGaAs superlattice structure 205 and be the intrinsic of t1/t2 nanometer and have short-period the 2nd GaNAs/InGaAs superlattice structure 206 with thickness.In other words; The thickness of trap layer GaNAs is the t1 nanometer in the one GaNAs/InGaAs superlattice structure 205; The thickness of trap layer InGaAs is the t3 nanometer in the one GaNAs/InGaAs superlattice structure 205, and the thickness of trap layer GaNAs is the t1 nanometer in the 2nd GaNAs/InGaAs superlattice structure 206, and the thickness of trap layer InGaAs is the t2 nanometer in the 2nd GaNAs/InGaAs superlattice structure 206; Wherein t1, t2, t3 are natural number, and t3 is not equal to t2.
(5) on active area 211 exposed surfaces, adopt MBE method growth N type GaAs layer as the 2nd GaAs layer 207, the AlGaAs layer 208 that the N type of then growing doping content is higher than the 2nd GaAs layer 207 prevents upwards diffusion of photohole as AlGaAs Window layer 208.
(6) the N type GaAs layer that on the exposed surface of AlGaAs Window layer 208, adopts MBE method growth high-dopant concentration so that battery and metal form good Ohmic contact, reduces battery impedance as GaAs contact layer 209, improves battery performance.
(7) making on the N type contact electrode 200 under the contact electrode 210 and P type respectively on GaAs contact layer 209 exposed surfaces with on substrate layer 201 exposed surfaces of Ge or GaAs.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (8)
1. solar cell with superlattice structure; It is characterized in that; Comprise a GaAs layer and an active area, said active area places on the exposed surface of a GaAs layer, and said active area comprises first, second GaNAs/InGaAs superlattice structure; Said the 2nd GaNAs/InGaAs superlattice structure is arranged at GaNAs/InGaAs superlattice structure surface, and the InGaAs layer thickness in said first, second GaNAs/InGaAs superlattice structure is different.
2. the solar cell with superlattice structure according to claim 1; It is characterized in that; Further comprise GaAs battery and GaAs resilient coating; Said GaAs battery places on the exposed surface of GaAs resilient coating, and said GaAs battery comprises an AlGaAs back of the body layer, a GaAs layer, active area, the 2nd GaAs layer and AlGaAs Window layer, wherein the conductiving doping type opposite of the conductiving doping type of a GaAs layer and the 2nd GaAs layer that sets gradually.
3. the solar cell with superlattice structure according to claim 2 is characterized in that, further comprises the substrate layer of Ge or GaAs, and comprises GaAs resilient coating, GaAs battery and the GaAs contact layer that on the substrate layer of Ge or GaAs, is provided with successively.
4. the solar cell with superlattice structure according to claim 1 is characterized in that, the periodic regime of said first, second GaNAs/InGaAs superlattice structure is respectively 1 nanometer to 10 nanometer.
5. described preparation method of claim 1 with solar cell of superlattice structure; It is characterized in that; Comprise step: 3) at GaAs layer exposed surface growth active area, said step 3) further comprises step: 31) at the GaAs laminar surface GaNAs/InGaAs superlattice structure of growing; 32) at a GaNAs/InGaAs superlattice structure superficial growth the 2nd GaNAs/InGaAs superlattice structure; Wherein, the InGaAs layer thickness in said two kinds of GaNAs/InGaAs superlattice structures is different.
6. the preparation method with solar cell of superlattice structure according to claim 5 is characterized in that, further comprises step before the said step 3): 1) at the exposed surface growth AlGaAs of a GaAs resilient coating back of the body layer; 2) at the AlGaAs back of the body laminar surface GaAs layer of growing; Further comprise step after the said step 3): 4) at surfaces of active regions the 2nd GaAs layer of growing; 5) in the 2nd GaAs laminar surface growth AlGaAs Window layer.
7. the preparation method with solar cell of superlattice structure according to claim 6; It is characterized in that; Comprise step before the said step 1):, comprise step after the said step 5): at AlGaAs Window layer superficial growth GaAs contact layer at the substrate layer exposed surface growth GaAs of Ge or GaAs resilient coating.
8. the preparation method with solar cell of superlattice structure according to claim 5 is characterized in that the growth pattern of In and N apart is all adopted in the growth of said first, second GaNAs/InGaAs superlattice structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210203843.2A CN102738267B (en) | 2012-06-20 | 2012-06-20 | Solar battery with superlattices and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210203843.2A CN102738267B (en) | 2012-06-20 | 2012-06-20 | Solar battery with superlattices and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102738267A true CN102738267A (en) | 2012-10-17 |
| CN102738267B CN102738267B (en) | 2015-01-21 |
Family
ID=46993418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210203843.2A Expired - Fee Related CN102738267B (en) | 2012-06-20 | 2012-06-20 | Solar battery with superlattices and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102738267B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544176A (en) * | 2012-02-24 | 2012-07-04 | 常州天合光能有限公司 | Photovoltaic assembly |
| CN105355668A (en) * | 2015-10-30 | 2016-02-24 | 华南理工大学 | In(0.3)Ga(0.7)As cell with amorphous buffer layer structure and preparation method thereof |
| CN105679873A (en) * | 2014-11-19 | 2016-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar cell based on quantum dot superlattice structure and preparation method of solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352807A (en) * | 1999-05-28 | 2002-06-05 | Hrl实验室有限公司 | Low turn-on voltage InP schuttky device and method for making the same |
| CN101533862A (en) * | 2009-03-18 | 2009-09-16 | 厦门市三安光电科技有限公司 | Current-matched and lattice-matched high-efficiency three-junction solar cell |
| CN101814538A (en) * | 2009-02-25 | 2010-08-25 | 中国科学院半导体研究所 | Miniature solar battery array integrated by single chips and preparation method thereof |
| CN102315291A (en) * | 2011-09-29 | 2012-01-11 | 西安电子科技大学 | P-i-n type InGaN solar cell possessing superlattice structure |
-
2012
- 2012-06-20 CN CN201210203843.2A patent/CN102738267B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352807A (en) * | 1999-05-28 | 2002-06-05 | Hrl实验室有限公司 | Low turn-on voltage InP schuttky device and method for making the same |
| CN101814538A (en) * | 2009-02-25 | 2010-08-25 | 中国科学院半导体研究所 | Miniature solar battery array integrated by single chips and preparation method thereof |
| CN101533862A (en) * | 2009-03-18 | 2009-09-16 | 厦门市三安光电科技有限公司 | Current-matched and lattice-matched high-efficiency three-junction solar cell |
| CN102315291A (en) * | 2011-09-29 | 2012-01-11 | 西安电子科技大学 | P-i-n type InGaN solar cell possessing superlattice structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544176A (en) * | 2012-02-24 | 2012-07-04 | 常州天合光能有限公司 | Photovoltaic assembly |
| CN105679873A (en) * | 2014-11-19 | 2016-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar cell based on quantum dot superlattice structure and preparation method of solar cell |
| CN105679873B (en) * | 2014-11-19 | 2018-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar cell based on quantum-dot superlattice structure and preparation method thereof |
| CN105355668A (en) * | 2015-10-30 | 2016-02-24 | 华南理工大学 | In(0.3)Ga(0.7)As cell with amorphous buffer layer structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102738267B (en) | 2015-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10066318B2 (en) | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices | |
| TWI482300B (en) | Inverted multijunction solar cells with group iv/iii-v hybrid alloys | |
| TWI594449B (en) | Four junction inverted metamorphic multijunction solar cell with two metamorphic layers | |
| US9437769B2 (en) | Four-junction quaternary compound solar cell and method thereof | |
| WO2012057874A1 (en) | Multi-junction solar cell with dilute nitride sub-cell having graded doping | |
| JP2010118666A (en) | Alternative substrate of inversion altered multi-junction solar battery | |
| JP2012004557A (en) | HIGH EFFICIENCY InGaAsN SOLAR CELL, AND MANUFACTURING METHOD THEREOF | |
| CN102790120B (en) | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof | |
| CN103280482A (en) | Multi-junction solar cell and manufacturing method thereof | |
| US10944022B2 (en) | Solar cell with delta doping layer | |
| CN102790116A (en) | Inverted GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof | |
| CN102738267B (en) | Solar battery with superlattices and manufacturing method thereof | |
| CN103000740B (en) | GaAs/GaInP double-junction solar battery and preparation method thereof | |
| US20120073658A1 (en) | Solar Cell and Method for Fabricating the Same | |
| CN111146305A (en) | Solar cell | |
| CN105355668A (en) | In(0.3)Ga(0.7)As cell with amorphous buffer layer structure and preparation method thereof | |
| CN102738266B (en) | Solar cell with doping superlattice and method for manufacturing solar cell | |
| US9853180B2 (en) | Inverted metamorphic multijunction solar cell with surface passivation | |
| Yamaguchi et al. | Super-high-efficiency III-V tandem and multi-junction cells | |
| Kim et al. | Efficiency Enhancement of InGaP/InGaAs/Ge Solar Cells with Gradually Doped PN Junction Active Layers | |
| CN117153915A (en) | Forward mismatch solar cell realizing strong radiation resistance by using lattice compressive stress | |
| CN117976742A (en) | Multi-junction solar cell and manufacturing method thereof | |
| CN114203327A (en) | P-i-n junction, preparation method, diode and beta nuclear battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20200620 |