CN102736397B - Photomask substrate, photomask, photomask substrate set, photomask set, method for manufacturing photomask and pattern transfer method - Google Patents

Photomask substrate, photomask, photomask substrate set, photomask set, method for manufacturing photomask and pattern transfer method Download PDF

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Publication number
CN102736397B
CN102736397B CN201210106982.3A CN201210106982A CN102736397B CN 102736397 B CN102736397 B CN 102736397B CN 201210106982 A CN201210106982 A CN 201210106982A CN 102736397 B CN102736397 B CN 102736397B
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photomask
pattern
transfer printing
type surface
zmax
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CN102736397A (en
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土屋雅誉
池边寿美
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Filters (AREA)

Abstract

The invention provides a photomask substrate, a photomask, a photomask substrate set, a photomask set, a method for manufacturing the photomask and a pattern transfer method. Pattern transfer precision is improved in proximity exposure. The photomask substrate is used for forming a photomask formed by a transfer pattern being formed on a main surface. In the photomask substrate, the maximal value Delta Zmax of the height change of the pattern region on the main surface is lower than 8.5 ([mu]m).

Description

Base board for optical mask and photomask and their group, manufacture method and printing transferring method
Technical field
The present invention relates to base board for optical mask, photomask, base board for optical mask group, photomask group, the manufacture method of photomask and pattern transfer-printing method.
Background technology
The liquid crystal indicator that computing machine or portable terminal device etc. have has following structure: the TFT substrate being formed with TFT (thin film transistor (TFT)) array (array) on Mght-transmitting base material and the color filter that is formed with RGB pattern on Mght-transmitting base material are pasted together, and have enclosed liquid crystal between which.Color filter (below also referred to as CF) is by implementing following operation successively to manufacture: on a first type surface of Mght-transmitting base material, form black matrix (black matrix) layer forming color boundaries portion; And then formed the colour filters (below also referred to as color layer) such as red filter layer, Green color filter, blue filter layer by a first type surface of the Mght-transmitting base material after black matrix layer division.Above-mentioned TFT and color filter all can be applied the photoetching employing photomask and manufacture.
On the other hand, when photomask setting (set) to be carried out pattern transfer printing in exposure machine, photomask can produce flexure slightly due to deadweight, in patent documentation 1, therefore describe the exposure machine supporting mechanism for alleviating this flexure.
[patent documentation 1] Japanese Unexamined Patent Publication 9-306832 publication
Require that the expectation of the performance improving liquid crystal indicator strengthens day by day.Especially portable terminal device equidimension is less and need the display device of fine image to require to exceed the performance of product in the past in several.Above-mentioned performance is distinctiveness (sharpness) (without the muddy stain), reaction velocity, resolving power etc. of color.For this expectation, require that the pattern of the photomask manufacturing TFT and CF forms ratio of precision in the past higher.
Such as, in the photomask that TFT is formed, in order to improve the reaction velocity of liquid crystal indicator, to make TFT pattern self become trickle, or when the mode etc. combinationally using trickleer TFT together with main TFT forms pattern on the photomask, the live width of fine dimension must be formed subtly.In addition, when using TFT and CF overlappingly, if location when extremely not controlling coordinate precision and the transfer printing of each pattern on photomask subtly, then there is following risk: produce position deviation between, thus the work producing liquid crystal is bad.
On the other hand, in the photomask that CF is formed, still there is a difficult problem in following aspect.As mentioned above, when using black matrix layer and color layer overlappingly, while pattern being formed subtly on mask, producing grid deviation due to the variation of pattern plane shape during transfer printing and deviation etc., now, can the problems such as muddy stain be produced.
When using photomask to form black matrix layer and colour filter on Mght-transmitting base material, most advantageously apply proximity (proximity) exposure.This is because compared with exposing with projection (projection), do not need complicated optical system in the structure of exposure machine, installation cost is also lower, and therefore production efficiency is high.But when applying proximity printing, be difficult to when transfer printing implement to correct to distortion, therefore compared with projection exposure, transfer printing precision is easily deteriorated.
In proximity printing, keep being formed with the transfer printing body of resist film and the pattern plane of photomask in mode respect to one another, make pattern plane downward, and irradiate light from the rear side of photomask, transfer pattern to thus on resist film.Now, predetermined slight gap (proximity gap) is set between photomask and transfer printing body.In addition, photomask has the transfer printing pattern photomask of the first type surface being formed at transparency carrier being carried out to predetermined composition.
Generally speaking, when photomask being arranged at proximity printing exposure machine, keep by the holding member of exposure machine the outside being formed with region (also referred to as area of the pattern) on the first type surface of transfer printing pattern, that be formed with transfer printing pattern.Herein, the photomask being equipped on exposure machine bends due to the weight of self sometimes, but the maintaining body of exposure machine can be utilized to carry out correction to a certain degree to above-mentioned flexure.Such as, in the method for patent documentation 1, describe the outside of the strong point at the holding member supporting photomask from below, apply the method for predetermined pressure from the top of mask.
But present inventor has found following situation: even if the method is useful for the impact of flexure on pattern transfer printing aspect alleviating photomask, but the method is only utilized to be still insufficient for the accurate display device manufacturing such use.Such as, distinguish following situation: when carrying out above-mentioned proximity printing, although the formation precision of the transfer printing pattern that photomask has is enough high and be in reference range, but the overlapping accuracy being formed at the pattern transferring on transfer printing body is insufficient, the unfavorable condition or muddy stain etc. in the work of liquid crystal indicator may be produced.Along with the continuous high-precision refinement of liquid crystal indicator, the deterioration of such pattern overlapping precision can not be allowed.
Summary of the invention
The object of the present application is, improves the transfer printing precision of pattern when formation transfer printing pattern being on the photomask transferred to transfer printing body by proximity printing.Especially, object is, when using multiple photomask to carry out transfer printing successively on same transfer printing body, improves the overlapping accuracy of pattern.
According to the 1st mode of the present invention, a kind of base board for optical mask is provided, it becomes photomask for forming transfer printing pattern on first type surface, and in this base board for optical mask, the maximal value Δ Zmax of the variation in altitude of the area of the pattern on described first type surface is less than 8.5 μm.
According to the 2nd mode of the present invention, base board for optical mask described in 1st mode is provided, wherein, when set separate predetermined standoff distance P be equally spaced set in the height of each measuring point in described area of the pattern relative to reference field as Z time, the maximal value Δ Zmax of described variation in altitude is the difference of the maxima and minima of described Z.
According to the 3rd mode of the present invention, provide the base board for optical mask described in the 2nd mode, wherein, described standoff distance P is 5mm≤P≤15mm.
According to the 4th mode of the present invention, a kind of manufacture method of photomask is provided, this manufacture method comprises following operation: use the base board for optical mask described in any one mode in the 1st ~ 3rd mode, the first type surface of described base board for optical mask forms blooming, and composition is implemented to described blooming, form transfer printing pattern thus.
According to the 5th mode of the present invention, provide a kind of photomask, this photomask is formed with transfer printing pattern on first type surface, and in this photomask, the maximal value Δ Zmax of the variation in altitude of the area of the pattern on described first type surface is less than 8.5 μm.
According to the 6th mode of the present invention, photomask described in 5th mode is provided, wherein, set separate predetermined standoff distance P be equally spaced set in the height of each measuring point in described area of the pattern relative to reference field as Z time, the maximal value Δ Zmax of described variation in altitude is the difference of the maxima and minima of described Z.
According to the 7th mode of the present invention, provide the photomask described in the 6th mode, wherein, described standoff distance P is 5mm≤P≤15mm.
According to the 8th mode of the present invention, provide the photomask described in any one mode in the 5th ~ 7th mode, wherein, this photomask is used for proximity printing.
According to the 9th mode of the present invention, provide the photomask described in any one mode in the 5th ~ 8th mode, wherein, there is in described area of the pattern color filter manufacture pattern.
According to the 10th mode of the present invention, provide a kind of pattern transfer-printing method, the photomask described in any one mode in the 5th ~ 9th mode is arranged at the exposure machine of proximity printing, carries out pattern transfer printing to transfer printing body.
According to the 11st mode of the present invention, provide a kind of base board for optical mask group, it has: the 1st base board for optical mask, and it becomes the 1st photomask for forming the transfer printing pattern to transfer printing body to be transferred on first type surface, and the 2nd base board for optical mask, its for formed on first type surface treat with described transfer printing pattern overlapping be transferred to the transfer printing pattern of described transfer printing body and become the 2nd photomask, in this base board for optical mask group, when the arbitrary some M set in the area of the pattern on the first type surface setting described 1st base board for optical mask relative to the height of reference field as Zm, if the some N being in the position corresponding with the some M on described 1st base board for optical mask in the area of the pattern on the first type surface of described 2nd base board for optical mask is Zn relative to the height of described reference field, and when having obtained the difference Zd of described Zm and described Zn, in described area of the pattern, the maximal value Δ Zdmax of this Zd be 17 (μm) below.
According to the 12nd mode of the present invention, provide a kind of photomask group, it has: the 1st photomask, and first type surface is formed the transfer printing pattern to transfer printing body to be transferred, and the 2nd photomask, its formed on first type surface need with described 1st transfer printing pattern overlapping be transferred to the transfer printing pattern of described transfer printing body, in this photomask is arranged, when the arbitrary some M set in the area of the pattern on the first type surface setting described 1st photomask relative to the height of reference field as Zm, if the some N being in the position corresponding with the some M on described 1st photomask in the area of the pattern on the first type surface of described 2nd photomask is Zn relative to the height of described reference field, and when having obtained the difference Zd of described Zm and described Zn, in described area of the pattern, the maximal value Δ Zdmax of this Zd be 17 (μm) below.
According to the 13rd mode of the present invention, a kind of pattern transfer-printing method is provided, is transferred to same transfer printing body the transfer printing pattern that described 1st photomask using the exposure machine of proximity printing the 12nd mode to be recorded has and the transfer printing pattern overlapping that described 2nd photomask that the 12nd mode is recorded has.
According to the present application, the transfer printing precision of pattern can be improved when formation transfer printing pattern being on the photomask transferred to transfer printing body by proximity printing.Especially it is possible to when using multiple photomask to carry out transfer printing to same transfer printing body successively, improving the overlapping accuracy of pattern.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the outline of the manufacturing process of the color filter illustrating present embodiment.
(a) of Fig. 2 is the side view of the situation of carrying out proximity printing in the manufacturing process of the color filter being illustrated in present embodiment, and (b) is its vertical view.
(a) of Fig. 3 is the vertical view of the planar structure of the photomask illustrating present embodiment, and (b) is the vertical view illustrating its variation.
Fig. 4 be illustrated in carry out pattern transfer printing overlappingly transfer printing body on the schematic diagram of situation of pattern transfer printing precision deterioration, a () shows the enlarged section of the 1st photomask forming black matrix layer, b () shows the enlarged section of the 2nd photomask forming red filter layer, (c) shows the situation to resist film pattern transferring.
Fig. 5 is the process flow diagram of the manufacturing process of the photomask illustrating present embodiment.
Fig. 6 is the schematic diagram illustrating the situation being measured flatness by incident laser.
Fig. 7 is the figure that the overlap of base board for optical mask and the relation of grid deviation are shown.
Fig. 8 is the figure of the flatness characteristic illustrating first type surface.
Fig. 9 be illustrated in carry out pattern transfer printing overlappingly transfer printing body on the schematic diagram of situation of pattern transfer printing precision deterioration, a () shows the enlarged section of the 1st photomask of the flatness trend representing predetermined, b () shows the enlarged section of the 2nd photomask of the flatness trend representing identical with the 1st photomask, (c) shows the situation to resist film pattern transferring.
Label declaration
100: the 1 photomasks; 101: transparency carrier (the 1st base board for optical mask); 103: bearing surface; 112p: transfer printing pattern; 133: area of the pattern; 200: the 2 photomasks; 201: transparency carrier (the 2nd base board for optical mask); 203: bearing surface; 212p: transfer printing pattern; 233: area of the pattern; 500: exposure machine; 503: support component.
Embodiment
< an embodiment of the invention >
Below an embodiment of the invention are described.
(1) manufacturing process of color filter
First, with reference to Fig. 1 ~ Fig. 3, the manufacturing process of the middle color filters used such as liquid crystal indicator is described.Fig. 1 is the process flow diagram of the outline of the manufacturing process of the color filter illustrating present embodiment.Fig. 2 (a) is the side view of the situation of carrying out proximity printing in the manufacturing process of the color filter being illustrated in present embodiment, and Fig. 2 (b) is its vertical view.Fig. 3 (a) is the vertical view of the planar structure of the photomask illustrating present embodiment, and Fig. 3 (b) is the vertical view illustrating its variation.
As shown in Figure 1, the color filter 10 of liquid crystal indicator is by implementing following operation successively to manufacture: on a first type surface of Mght-transmitting base material 11, form the black matrix layer 12p (Fig. 1 (a) ~ (e)) forming color boundaries portion; And then formed the colour filters (Fig. 1 (f) ~ (j)) such as red filter layer 14p, Green color filter 15p, blue filter layer 16p by a first type surface of the Mght-transmitting base material 11 after black matrix layer 12p division.Below each operation is described.
(formation of black matrix layer)
First, prepare the Mght-transmitting base material 11 be made up of translucent resin or glass etc., a first type surface of Mght-transmitting base material 11 forms light screening material film 12, light screening material film 12 is formed resist film 13 (Fig. 1 (a)).
Then, the 1st photomask 100 black matrix formed and being formed in the exposure machine 500 that the light screening material film 12 of transfer printing body and the Mght-transmitting base material 11 of resist film 13 are configured to proximity printing (Fig. 1 (b), Fig. 2).
In addition, as shown in the vertical view of Fig. 3 (a), 1st photomask 100 has the area of the pattern 133 possessing transfer printing pattern 112p, the photomask of this transfer printing pattern 112p to the first type surface being formed at transparency carrier 101 carries out predetermined composition and is formed (below, except being formed with the region of transfer printing pattern, sometimes also presumptive area to be formed is set to area of the pattern 133).The shape of transfer printing pattern 112p is such as clathrate, to form black matrix layer 12p.In addition, on a first type surface of the transparency carrier 101 of the 1st photomask 100, the outside of area of the pattern 133, form transparency carrier 101 first type surface periphery relative both sides separately near there is bearing surface 103 respectively that abut with the holding member 503 of exposure machine 500.In bearing surface 103, can photomask be formed, transparency carrier 101 first type surface also can be made to expose.
As shown in Fig. 2 (a), support bearing surface 103 from below respectively with the holding member 503 of exposure machine 500, make the 1st photomask 100 be configured in exposure machine 500 with flat-hand position thus.Further, the transfer printing pattern 112p that the 1st photomask 100 is had is relative with the resist film 13 be formed on Mght-transmitting base material 11, and such as, slight gap within more than 10 μm 300 μm is configured.
1st photomask 100 and the Mght-transmitting base material 11 that is formed with light screening material film 12 and resist film 13 are configured in the exposure machine 500 of proximity printing, after completing contraposition each other, use light source 501 and irradiation system 502, from the light of the rear side irradiation ultraviolet radiation of the 1st photomask 100 etc., across transfer printing pattern 112p, resist film 13 is exposed, make a part for resist film 13 photosensitive (Fig. 1 (c), Fig. 2 (a)).In exposure, the light source of i line ~ g line can be used.
Then, take out from exposure machine 500 the 1st photomask 100 and be formed with light screening material film 12 and resist film 13 exposure after Mght-transmitting base material 11.Then, resist film 13 is developed, cover to forming section the Resist patterns 13p (Fig. 1 (d)) of photomask.
Then, with the Resist patterns 13p formed for mask etches light screening material film 12, a first type surface of Mght-transmitting base material 11 forms black matrix layer 12p (Fig. 1 (e)).After defining black matrix layer 12p, remove Resist patterns 13p.
(formation of red filter layer)
Then, on the first type surface of Mght-transmitting base material 11 being formed with black matrix layer 12p, the red resist film 14 (Fig. 1 (f)) be such as made up of photoresist material is formed.
Then, the 2nd photomask 200 red filter layer formed and being formed in the above-mentioned exposure machine 500 that the black matrix layer 12p of transfer printing body and the Mght-transmitting base material 11 of red resist film 14 are configured to proximity printing (Fig. 1 (g)).
In addition, as planar structure illustrative in Fig. 3 (a), 2nd photomask 200 has the area of the pattern 233 possessing transfer printing pattern 212p, and this transfer printing pattern 212p is formed by photomask being processed into predetermined transfer printing pattern on a first type surface of transparency carrier 201.In addition, the shape of transfer printing pattern 212p is formed as the shape for the formation of red filter layer 14p, is the shape different from the transfer printing pattern 112p of the 1st photomask 100.In addition, on a first type surface of the transparency carrier 201 of the 2nd photomask 200, in the respective near zone in relative both sides of periphery outside area of the pattern 233, that form transparency carrier 201, there is bearing surface 203 respectively that abut with the holding member 503 of exposure machine 500.In bearing surface 203, can photomask be formed, transparency carrier 201 first type surface also can be made to expose.
As shown in Fig. 2 (a), support bearing surface 203 from below respectively with the holding member 503 of exposure machine 500, make the 2nd photomask 200 be configured in exposure machine 500 with flat-hand position thus.Further, the transfer printing pattern 212p that the 2nd photomask 200 is had is relative with the red resist film 14 be formed on Mght-transmitting base material 11, is configured across above-mentioned slight gap.
2nd photomask 200 and the Mght-transmitting base material 11 that is formed with black matrix layer 12p and red resist film 14 are configured in the exposure machine 500 of proximity printing, after completing contraposition each other, use light source 501 and irradiation system 502, from the light of the rear side irradiation ultraviolet radiation of the 2nd photomask 200 etc., across transfer printing pattern 212p, red resist film 14 is exposed, make a part for red resist film 14 photosensitive (Fig. 1 (h)).
Then, from exposure machine 500, the 2nd photomask 200 and the Mght-transmitting base material 11 after red resist film 14 is exposed is taken out.Then, red resist film 14 is developed and removes unnecessary red resist film 14, and (bake) is toasted to residual red resist film 14 make it harden, form red filter layer 14p (Fig. 1 (i)) thus.
(formation of Green color filter and blue filter layer)
Then, carry out the formation of Green color filter 15p and blue filter layer 16p in the same manner as the formation of red filter layer 14p, terminate a first type surface of the Mght-transmitting base material 11 after black matrix layer 12p division is being formed the operation (Fig. 1 (j)) of the colour filters such as red filter layer 14p, Green color filter 15p, blue filter layer 16p.
(formation of ITO electrode)
Although not shown, afterwards, form ito film in the mode of the upper surface covering the colour filter such as black matrix layer 12p, red filter layer 14p, Green color filter 15p, blue filter layer 16p and be used as transparency electrode, thus terminate the manufacture of color filter 10.
(2) about pattern transfer printing precision
As mentioned above, when manufacturing color filter, using the photomask etc. being formed with black matrix layer 12p, red filter layer 14p, Green color filter 15p, blue filter layer 16p, carrying out the multiexposure, multiple exposure based on proximity printing.But found following situation: when carrying out proximity printing, although the machining precision of transfer printing pattern that has of each photomask is enough high and be in reference range, as the coincidence result of transfer printing pattern, transfer printing precision may be insufficient.
According to the deep research of inventor etc., distinguish: the deterioration of above-mentioned transfer printing precision due in each photomask, change because of the little height of area of the pattern the transfer printing coordinate variation that causes and produce.Distinguish further: the deterioration of this transfer printing precision may be amplified due to the pattern transferring of multiple photomask overlapping on transfer printing body, if do not consider this situation, has an impact sometimes to the function of final products.Fig. 4 is the schematic diagram of the situation being illustrated in pattern transfer printing precision deterioration when continuing to carry out proximity printing, a () shows the enlarged section of the photomask 100 ' forming black matrix layer, b () shows the enlarged section of the photomask 200 ' forming red filter layer, (c) shows the situation to resist film 13,14 pattern transferring.Certainly, these photomasks also can be the photomasks for the formation of other layers.
As shown in Fig. 4 (c), prerequisite is: the first type surface impinging perpendicularly on photomask 100 ', 200 ' from exposure machine 500 across the exposure light that photomask 100 ', 200 ' is irradiated to resist film.But in fact cannot get rid of the situation that this incident angle tilts slightly completely, predetermined oblique angle (such as θ) carries out incidence sometimes.In reality, the upper limit of θ is about 1 degree.In these cases, the position of the pattern to resist film 13,14 to be transferred is projected obliquely, thus correspondingly departs from scheduled volume in the horizontal direction with the size of the inclination angle theta of exposure light.In Fig. 4 (c), show the normal slope of a first type surface relative to photomask 100 ', 200 ' angle θ incident exposure light, thus the transfer position of pattern deviate from the situation of S0 in the horizontal direction.
Even if create above-mentioned transfer printing deviation, as long as departure S0 is constant in whole of resist film 13,14, just substantially the deterioration of transfer printing precision is not had an impact.But, the flatness correspondingly localized variation of a first type surface of the deep research according to inventor etc.: departure S0 and transparency carrier 101 ', 201 '.And known: along with the variation of this departure S0, create the partial deterioration of pattern transfer printing precision.Especially, find following situation: even if local variation's amount of departure is in respectively in allowed band in each photomask monomer, but when using multiple photomask to make pattern overlapping successively, if the variation direction at predetermined lap position place is different from each other (such as, the mode sentencing deviation quantitative change large in predetermined lap position in the photomask of a side changes, and the mode diminished with departure in above-mentioned position in the photomask of the opposing party changes), then the aggregate-value of variation during overlap exceeds the allowed band of transfer printing precision in local sometimes.
The first type surface that Fig. 4 (a) shows the transparency carrier 101 ' in transfer printing pattern 112p ' exists the enlarged section of the photomask 100 ' of the recessed structure of degree of depth Zm.When using this photomask 100 ' to carry out proximity printing, as shown in Fig. 4 (c), the height and position (Z position) of the transfer printing pattern 112p ' formed in recessed structure is compared with the height and position (Z position) of the transfer printing pattern 112p ' of other flat sites, and maximum (at M point place) exceeds Zm.Its result, because exposure light has tilted angle θ and the departure S1 of recessed structure division that produces compared with the departure S0 of above-mentioned par, local becomes large (S1 > S0).
On the other hand, the first type surface that Fig. 4 (b) shows the transparency carrier 201 ' in transfer printing pattern 212p ' exists the enlarged section of the 2nd photomask 200 ' of the male structure of height Zn.As shown in Fig. 4 (c), when using this 2nd photomask 200 ' to carry out proximity printing, the height and position (Z position) of the transfer printing pattern 212p ' that male structure is formed compared with the height and position (Z position) of the transfer printing pattern 212p ' of other flat sites, maximum (at N point place) low Zn.Its result, because exposure light has tilted angle θ and the departure S2 of male structure part that produces compared with the departure S0 of above-mentioned par, local diminishes (S2 < S0).
In addition, the deterioration of above-mentioned pattern transfer printing precision is the problem produced in 1 proximity printing being used alone 1 photomask, but the deep research according to inventor etc.: especially when using multiple photomask to carry out proximity printing to same transfer printing body successively, the variation of departure S0 can bring larger impact, sometimes makes pattern transfer printing precision deteriorated to a greater degree.Namely, such as shown in Fig. 4 (c), when the recessed structure being present in the 1st photomask 100 ' and the male structure being present in photomask 200 ' are overlapping on the vertical axis, by continuing to carry out proximity printing, most conference produces in local for the coordinate position of the black matrix layer at the part place of concaveconvex structure and the transfer printing pattern of red filter layer | the deviation of S1-S2| (=|-Zm-(+Zn) | tan θ).That is, even if the coordinate precision as independent photomask is in benchmark, forming overlapping use in the photomask of the photomask group (photomask set) of pattern transferring, also must consider that above-mentioned key element carries out processing and selecting.In addition, known: for the base board for optical mask that can manufacture the photomask forming photomask group, need to carry out stricter evaluation in its flatness.
The result that inventor etc. carry out deep research obtains following opinion: in order to improve pattern transfer printing precision when carrying out proximity printing, and the variation in altitude controlling a first type surface of the transparency carrier in area of the pattern is effective.
According to the present embodiment applying above-mentioned opinion, use a kind of base board for optical mask, it becomes photomask for forming transfer printing pattern on first type surface, in this base board for optical mask, the maximal value Δ Zmax of the variation in altitude of the area of the pattern on described first type surface be 8.5 (μm) below.
That is, use above-mentioned like this |-Zm-(+Zn) | the maximal value Δ Zmax of area of the pattern be the base board for optical mask of less than 8.5 μm.When this value is exceeded, sometimes, can be combined due to the variation in altitude of the area of the pattern had with the photomask for carrying out overlapping exposures to same transfer printing body, cause the grid deviation that transfer printing body produces to exceed allowed band.In addition, about the allowed band of said grid deviation herein, will carry out later describing.
The base board for optical mask of present embodiment can be utilized the tight grinding of transparency carrier and then be obtained by the selection of substrate.But, when the numerical value of above-mentioned maximal value is too small, when the surface working of substrate, exceed the ability of processing unit (plant) sometimes or need excessive process time.Therefore, the maximal value Δ Zmax in preferred pattern region is more than 1 μm.
About the maximal value Δ Zmax of the variation in altitude of area of the pattern, when having obtained the height Z of the arbitrfary point in area of the pattern relative to reference field, maximal value Δ Zmax can be set to the difference of the maxima and minima of this height Z.
In addition, about arbitrfary point, such as, can determine and benchmark in the following manner.That is, arbitrfary point can be set to by separating the point that predetermined standoff distance P is equally spaced set in described area of the pattern.Such as, for in the area of the pattern of described base board for optical mask, (more than 5mm below 15mm is preferably with predetermined standoff distance P, such as 10mm) the lattice point all when depicting grid along XY direction in interval, when their height Z is set to measuring point, the difference of the maxima and minima of height Z can be set to maximal value Δ Zmax.
Herein, as described later, height Z can use flatness measuring machine to measure, and the reference field of operative installations defined can obtain height Z.In addition, when measuring the height Z at each point place of area of the pattern, preferably, make base board for optical mask vertical thus measuring under eliminating in fact the situation because of the flexure effects caused of conducting oneself with dignity.
Flatness based on this base board for optical mask controls, and has the following advantages.
Device pattern (device pattern) the constantly granular of liquid crystal indicator.For the black matrix (BM) for color filter, the expectation of graph thinning is strong especially.Expected recently to reach 8 μm or about 6 μm with regard to enough BM width for about 10 μm, the difficulty of manufacturing technology increases further in the past.
Such as, the situation (Fig. 7 (a)) that will form the BM of 6 μm is considered.When color version is overlapping with BM, a side (such as BM.Same below) maximal value of grid deviation that allows is 3 μm (Fig. 7 (b)).This is because, when the border of color version (such as red (red) with blue (blue)) each other exceeds the width of BM, can the problems such as muddy stain be produced.Further, when considering color version self and there is linewidth error and BM self existing linewidth error, the grid deviation of a side is necessary for (Fig. 7 (c)) within (3 μm × 1/2 × 1/2=) 0.75 μm.
In addition, the description repeatability that drawing apparatus has is about 0.15 μm, and therefore, the allowance (margin) of photomask base plate side is (0.75-0.15=) 0.60 μm.This is the permissible value (Fig. 7 (d)) of the grid deviation that photomask causes.
But the essential factor of the grid deviation caused by base board for optical mask not only comprises flatness (variation in altitude) this factor of photomask first type surface.According to the research of inventor, there is multiple factor, as non-accidental factor (factor that can not ignore), also comprise following key element: the distortion of the transfer printing pattern that the holding member 503 due to exposure machine 500 causes with abutting of photomask; The shape of 2nd first type surface (back side) corresponding with area of the pattern.Herein, the grid deviation produced during the description with transfer printing pattern of the shape of the 2nd first type surface is relevant, therefore can not ignore.
Therefore, admissible grid deviation amount is allocated in above-mentioned 3 factors (Fig. 7 (e)) mainly, and in order to meet Cpk (process capability index) 1.3, the permissible variation amount that the variation in altitude of area of the pattern causes is necessary within 0.15 μm in single-piece photomask (departure therefore, produced because of the combination of two photomasks be 0.3 μm within) (S1-S2 of Fig. 4 (c)).
As mentioned above, departure is [Δ Zmaxtan θ], and the upper limit of θ is 1 degree, therefore
ΔZmax·tanθ≤0.15(μm)
So, Δ Zmax≤8.59 (deg),
As the maximal value Δ Zmax of variation in altitude, as long as using less than 8.5 μm as benchmark, just the grid deviation that this key element causes can be suppressed to the degree not affecting BM performance.
In addition, it is further preferred that the maximal value Δ Zmax of the variation in altitude of area of the pattern be 7.5 (μm) below.Now, can supplement black matrix live width be about 5.5 μm lower generation liquid crystal indicator coordinate precision.
In the area of the pattern of first type surface, predetermined standoff distance P can be separated and equally spaced sets multiple measuring point.The fundamental purpose of present embodiment is the coordinate precision deterioration during transfer printing suppressing uneven face shape in area of the pattern to cause, when the standoff distance of measuring point is excessive, and the precise decreasing of the variation in altitude value obtained.But in the stage of transparency carrier after have passed through precise finiss of photomask, the cycle that eliminates less concavo-convex, therefore, by with the standoff distance of more than 5mm setting measuring point, can obtain sufficient variation in altitude characteristic (profile).Specifically, the standoff distance of measuring point can be set to 5≤P≤15 (mm).Such as, preferably the lattice point of the grid of 10mm width is set to measuring point.
(3) manufacture method of photomask
Below, be described with reference to Fig. 5, Fig. 6 manufacture method to the photomask of present embodiment.Fig. 5 is the process flow diagram of the manufacturing process of the photomask illustrating present embodiment.Fig. 6 is the schematic diagram illustrating the situation being measured flatness by incident laser.In addition, in the following description, be described for the situation manufacturing the 1st photomask 100 that black matrix is formed, but, also can carry out the manufacture of the 2nd ~ 4th photomask that filter layer is formed in the same manner as the manufacture of the 1st photomask 100.
(preparation of transparency carrier and the inspection of flatness)
First, the transparency carrier 101 (Fig. 5 (a)) as base board for optical mask is prepared.In addition, as also illustrative in Fig. 3 (a), transparency carrier 101 is rectangular tabular when being and overlooking, and its size such as can be set to: long limit L1 is 600 ~ 1400 (mm), minor face L2 to be 500 ~ 1300 (mm), thickness T be 6 ~ 13 (mm) left and right.Transparency carrier 101 such as can by quartz (SiO 2) glass or comprise SiO 2, Al 2o 3, B 2o 3, RO, R 2the formations such as the low-expansion glass of O etc.On a first type surface of transparency carrier 101, be provided with the formation presumptive area of above-mentioned transfer printing pattern 112p.In addition, in the outside of transfer printing by the formation presumptive area of pattern 112p, on the bearing surface 103 of respective vicinity, the relative both sides (being long limit L1 in the present embodiment) being in the periphery forming transparency carrier 101, abut with the holding member 503 of exposure machine 500.
The interarea (front and back) of transparency carrier 101 is configured to smooth and level and smooth respectively by carrying out grinding.As mentioned above, about the flatness of a first type surface of transparency carrier 101, become 8.5 (μm) mode below to make the maximal value Δ Zmax of the variation in altitude of area of the pattern and carry out precise finiss.Or, select the transparency carrier meeting this benchmark as transparency carrier 101.
Carry out the mensuration of flatness as follows.In order to obtain the maximal value Δ Zmax of variation in altitude, measure the height Z of each measuring point.When first type surface sets multiple measuring point, the height Z of each point is the distance between each measuring point and reference field.In addition, height Z face in deviation be exactly above-mentioned variation in altitude.Such as, when using flatness analyzer to measure above-mentioned distance, the reference field that this analyzer has can be set to said reference face.Such as, as shown in Figure 6, the method etc. to the first type surface incident laser of in supporting zone can be used to check.The device that the flatness measuring machine FFT-1500 (registered trademark) that Hei Tian Seiko company such as can be used to manufacture or Japanese Unexamined Patent Publication 2007-46946 publication are recorded measures.
In Fig. 8 exemplified with obtain thus, the characteristic of variation in altitude in the area of the pattern of base board for optical mask.
As measuring point, as mentioned above, in the entirety of area of the pattern, set the lattice point at the interval of standoff distance P (being preferably more than 5mm below 15mm, such as, is 10mm), obtain the height Z of all measuring points.Further, the maximal value Δ Zmax of variation in altitude is obtained.Now, if only combining Δ Zmax is that the photomask of less than 8.5 μm exposes same transfer printing body, the coordinate precision deterioration that the variation in altitude of area of the pattern causes can not become problem in fact.On the other hand, even if when more than 8.5 μm, if the state of the variation in altitude of other photomasks used in combination is identical, then also mask set can be used as.To carry out later describing about this point.
(formation of photomask and resist film)
Then, the first type surface of transparency carrier 101 being formed is such as the photomask 112 (Fig. 5 (b)) of major component with Cr.Photomask 112 is such as formed by method such as sputtering (sputtering) or vacuum evaporation etc.The thickness of photomask 112 is the thickness of the irradiation light being enough to block exposure machine 500, such as, can be set to about 90 ~ 140nm.In addition, preferably, formed such as with the antireflection layer that CrO etc. is major component at the upper surface of photomask 112.In addition, also photomask 112 can not be formed on bearing surface 103.
Then, photomask 112 forms resist film 113 (Fig. 5 (b)).Resist film 113 can by just (positive) property photo anti-corrosion agent material or negative (negative) property photo anti-corrosion agent material are formed.In the following description, if resist film 113 is formed by positive photoresist material.Resist film 113 is such as formed by methods such as rotary coating (spincoating) or slot coated (slit coating).
(patterning step)
Then, utilize laser description machine etc. to carry out description exposure to resist film 113, make a part for resist film 113 photosensitive.Afterwards, utilize the methods such as spraying (spray) mode to provide developer solution to make it develop to resist film 113, form the Resist patterns 113p (Fig. 5 (c)) of the part covering photomask 112.
Then, the Resist patterns of formation is etched as the part of mask to photomask 112.The etching of photomask 112 is undertaken by utilizing the methods such as spraying method to be provided on photomask 112 by chromium (chrome) etching solution.Its result, on a first type surface of transparency carrier 101, forms the transfer printing pattern 112p (Fig. 5 (d)) photomask 112 being carried out to composition.Then, remove Resist patterns 113p and terminate the manufacture (Fig. 5 (e)) of the 1st photomask 100.
In addition, the mensuration of above-mentioned flatness also can be carried out after photomask is formed.Method can be same as described above.
< another embodiment of the present invention >
In the above-described embodiment, describe and use the maximal value Δ Zmax meeting variation in altitude to be the situation of 8.5 (μm) base board for optical mask of this important document below.But, the invention is not restricted to above-mentioned embodiment, base board for optical mask group as described below can be used.
That is, following base board for optical mask group can be used,
This base board for optical mask group has: the 1st base board for optical mask, and it becomes the 1st photomask for forming the transfer printing pattern to transfer printing body to be transferred on first type surface; And the 2nd base board for optical mask, its for formed on first type surface treat with described transfer printing pattern overlapping be transferred to the transfer printing pattern of described transfer printing body and become the 2nd photomask, in this base board for optical mask group,
When the arbitrary some M set in the area of the pattern on the first type surface setting described 1st base board for optical mask relative to the height of reference field as Zm,
If some N in the area of the pattern on the first type surface of described 2nd base board for optical mask, that be in the position corresponding with the some M on described 1st base board for optical mask is Zn relative to the height of described reference field,
And when having obtained the difference Zd of described Zm and described Zn,
In described area of the pattern, the maximal value Δ Zdmax of this Zd be 17 (μm) below.
Thereby, it is possible to manufacture the liquid crystal indicator etc. of coordinate precision excellence.Namely, even if do not meet " the maximal value Δ Zmax of variation in altitude be 8.5 (μm) below " this benchmark in base board for optical mask monomer, but when the group of multiple base board for optical mask obtains the characteristic of above-mentioned variation in altitude, namely, when meeting " the variation in altitude maximal value Δ Zdmax as group be 17 (μm) below " this benchmark combining the identical base board for optical mask of multiple variation in altitude state, also these base board for optical mask can be used as well the base board for optical mask group of overlapping pattern on same transfer printing body.
Such as shown in Fig. 9, for will overlapping pattern transferring and carrying out exposes on same transfer printing body the 1st photomask 100 ' substrate and the 2nd photomask 200 ' substrate, except the situation that at least any one party meets " the maximal value Δ Zmax of variation in altitude be 8.5 (μm) below " this benchmark, such as when both pattern plane are spill, the variation in altitude maximal value Δ Zdmax of the group as these base board for optical mask can be set to less than 17 μm.This above-mentioned explanation that this is within the permissible variation amount caused based on the variation in altitude of area of the pattern is 0.15 μm in single-piece photomask (departure therefore, produced because of the combination of two photomasks be 0.3 μm within) and setting up (S1-S2 of Fig. 4 (c)).That is, if the flatness characteristic of known the other side's photomask in groups, even if then the variation in altitude maximal value Δ Zmax of each photomask allows.Thereby, it is possible to relax the requirement benchmark of the flatness in base board for optical mask monomer, the production cost of photomask can be reduced, and not make coordinate precision deterioration.
In addition, in the above description, so-called same transfer printing body, having referred to stacked and will carry out the transfer printing body of the film of composition or carry out stacked transfer printing body in the process of composition, is that the pattern transferring had each photomask carries out contraposition and carries out the object of transfer printing successively overlappingly.Such as, carry out transfer printing by the photomask of overlapping black matrix and color version successively to transfer printing body and manufacture color filter, or, carry out transfer printing by further overlapping film transistor photomask to transfer printing body and manufacture liquid crystal indicator.In addition, transfer printing body also comprises the transfer printing body of the state of the resist film be coated with as composition mask.
About obtaining the 1st photomask 100 ' forming base board for optical mask group substrate and the 2nd photomask 200 ' method of the maximal value Δ Zdmax of the difference in height (Zd=|-Zm-(-Zn) |) between substrate, can be identical with said method.
That is, at the 1st photomask 100 ' with substrate setting multiple measuring point M1, M2, M3.At the 1st photomask 100 ' with in the area of the pattern on substrate, equally spaced set multiple this measuring point M1.Such as, can be set in this area of the pattern, lattice point when to depict grid along XY direction with predetermined space (such as 10mm).Further, for M1, M2, M3, the value of height Zm1, Zm2, the Zm3 relative to reference field is obtained.On the other hand, at the 2nd photomask 200 ' with in substrate, being also similarly, when setting lattice point N1, N2, N3 with the 1st photomask 100 ' with the position that substrate is corresponding, obtaining these height Zn1, Zn2, Zn3 relative to reference field.Further, maximal value Δ Zdmax can be obtained according to the difference in height (Zd=|-Zm-(-Zn) |) of two substrates being in corresponding position.
In addition, these base board for optical mask form pattern transferring respectively and in the photomask group made, also can carry out evaluation similar to the above.Therefore, the present invention is same with present embodiment, can use photomask group as described below.
That is, following photomask group can be used,
This photomask group has: the 1st photomask, and it is formed with the transfer printing pattern to transfer printing body to be transferred on first type surface; And the 2nd photomask, its formed on first type surface need with described transfer printing pattern overlapping be transferred to the transfer printing pattern of described transfer printing body, in this photomask group,
When the arbitrary some M set in the area of the pattern on the first type surface setting described 1st photomask relative to the height of reference field as Zm,
If some N in the area of the pattern on the first type surface of described 2nd photomask, that be in the position corresponding with the some M on described 1st photomask is Zn relative to the height of described reference field,
And when having obtained the difference Zd of described Zm and described Zn,
In described area of the pattern, the maximal value Δ Zdmax of the variation of Zd be 17 (μm) below.
In addition, in above-mentioned base board for optical mask group and photomask group, more preferably Δ Zdmax be 15 (μm) below.
Further, in the present embodiment, the printing transferring method of the group employing these photomasks can be implemented.That is, be transferred to same transfer printing body the transfer printing pattern overlapping that the transfer printing pattern using the exposure machine of proximity printing to be had by the 1st photomask and the 2nd photomask have.Thereby, it is possible to obtain the electron devices such as the liquid crystal indicator of coordinate precision excellence.
< other embodiments of the present invention >
Above, embodiments of the present invention are illustrated, but the invention is not restricted to above-mentioned embodiment, various change can be carried out in the scope not departing from its purport.
Such as, black matrix layer 12p is not limited to metal materials such as Cr for major component, also can be formed by the photoresist etc. with light-proofness.When using photoresist, black matrix layer 12p can as colour filter, by implementing exposure, development successively, toasts and is formed.
Further, in the above-described embodiment, describe use quartz etc. is ground and the transparent glass substrate that produces as the situation of base board for optical mask, but the invention is not restricted to aforesaid way.Such as, as base board for optical mask, when employing the photomask blank that is formed with any one party in blooming and resist etc. on this transparent glass substrate or the photo mask midbody etc. in employing the operation forming predetermined pattern transferring on this photomask, also very applicable application the present invention.
According to the present invention, before transfer printing pattern is formed, the transfer performance of each base board for optical mask of overlapping transfer printing can be used for according to the Phase Evaluation of transparency carrier.In addition, can according to the analysis of the variation in altitude of area of the pattern, the performance evaluation of photomask group using the performance evaluation of each photomask respectively and combinationally use, provides the advantage in batch production (advantage).This advantage is not limited to color filter, and can apply at thin film transistor (TFT) and organic EL etc. is also useful in the manufacture of the product of proximity printing.

Claims (5)

1. for the manufacture of a photomask base plate for display device, it becomes proximity printing photomask for forming display device transfer printing pattern on first type surface, and the feature of this photomask base plate is,
Long limit L1 be 600mm ~ 1400mm, minor face L2 is in the photomask base plate of 500mm ~ 1300mm,
When by the transfer printing area of the pattern on described first type surface, be separated by 10mm standoff distance and each measuring point equally spaced set is set to Z relative to the height of reference field, and when the difference of the maxima and minima of described Z is set to Δ Zmax, Δ Zmax is less than 8.5 μm.
2. a manufacture method for photomask, is characterized in that, this manufacture method comprises following operation:
Prepare photomask base plate according to claim 1;
The first type surface of described photomask base plate forms blooming, and composition is implemented to described blooming, form transfer printing pattern thus.
3. the photomask for the manufacture of display device, this photomask is the proximity printing photomask being formed with display device transfer printing pattern on first type surface, and its long limit L1 is 600mm ~ 1400mm, and minor face L2 is 500mm ~ 1300mm, the feature of this photomask is
When by the transfer printing area of the pattern on described first type surface, be separated by 10mm standoff distance and each measuring point equally spaced set is set to Z relative to the height of reference field, and when the difference of the maxima and minima of described Z is set to Δ Zmax, Δ Zmax is less than 8.5 μm.
4. photomask according to claim 3, is characterized in that,
There is color filter manufacture pattern in described pattern transferring region.
5. a pattern transfer-printing method, is characterized in that,
Photomask described in claim 3 or 4 is arranged at the exposure machine of proximity printing, carries out pattern transfer printing to transfer printing body.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1707358A (en) * 2004-06-08 2005-12-14 住友化学株式会社 Photosensitive resin composition
CN1862376A (en) * 2005-02-25 2006-11-15 Hoya株式会社 Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method
US7351504B2 (en) * 2003-07-25 2008-04-01 Shin-Etsu Chemical Co., Ltd. Photomask blank substrate, photomask blank and photomask

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3250560B2 (en) * 2000-12-11 2002-01-28 ソニー株式会社 Method for manufacturing semiconductor device
JP3627805B2 (en) * 2001-04-20 2005-03-09 信越化学工業株式会社 Glass substrate for photomask and method for producing the same
JP4340859B2 (en) 2003-07-25 2009-10-07 信越化学工業株式会社 Photomask blank substrate selection method
KR100710960B1 (en) * 2004-09-29 2007-04-24 호야 가부시키가이샤 Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
JP4803576B2 (en) * 2004-09-29 2011-10-26 Ｈｏｙａ株式会社 Mask blank substrate, mask blank, exposure mask, semiconductor device manufacturing method, and mask blank substrate manufacturing method
JP4362732B2 (en) * 2005-06-17 2009-11-11 信越化学工業株式会社 Large glass substrate for photomask and manufacturing method thereof, computer-readable recording medium, and mother glass exposure method
US7608542B2 (en) * 2005-06-17 2009-10-27 Shin-Etsu Chemical Co., Ltd. Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method
JP2009037203A (en) * 2007-07-12 2009-02-19 Hoya Corp Method for forming pattern, method for manufacturing thin film transistor substrate, method for manufacturing liquid crystal display device, and photomask
JP4971278B2 (en) * 2008-09-25 2012-07-11 信越化学工業株式会社 Photomask blank selection method and manufacturing method, and photomask manufacturing method
JP5335351B2 (en) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 Mask blank substrate set, mask blank set, photomask set, and semiconductor device manufacturing method
JP5331638B2 (en) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 Photomask manufacturing method and drawing apparatus for display device manufacturing
KR101271644B1 (en) * 2008-11-26 2013-07-30 호야 가부시키가이샤 Mask blank substrate
JP4853684B2 (en) * 2009-03-31 2012-01-11 信越化学工業株式会社 Photomask blank and photomask
KR101270659B1 (en) * 2009-05-27 2013-06-03 주식회사 에스앤에스텍 Substrate for Blank Mask, Blank Mask and Manufacturing Method Thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7351504B2 (en) * 2003-07-25 2008-04-01 Shin-Etsu Chemical Co., Ltd. Photomask blank substrate, photomask blank and photomask
CN1707358A (en) * 2004-06-08 2005-12-14 住友化学株式会社 Photosensitive resin composition
CN1862376A (en) * 2005-02-25 2006-11-15 Hoya株式会社 Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method

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