CN102736011B - Method for determining service life of AlGaN/GaN-based heterojunction channel carrier - Google Patents
Method for determining service life of AlGaN/GaN-based heterojunction channel carrier Download PDFInfo
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- CN102736011B CN102736011B CN201210238641.1A CN201210238641A CN102736011B CN 102736011 B CN102736011 B CN 102736011B CN 201210238641 A CN201210238641 A CN 201210238641A CN 102736011 B CN102736011 B CN 102736011B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 33
- 238000004020 luminiscence type Methods 0.000 claims abstract description 10
- 238000010586 diagram Methods 0.000 claims abstract description 8
- 238000004611 spectroscopical analysis Methods 0.000 claims description 38
- 239000002800 charge carrier Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000000280 vitalizing effect Effects 0.000 description 1
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Abstract
The invention discloses a method for determining the service life of AlGaN/GaN-based heterojunction channel carriers, and belongs to the technical field of carrier relaxation physical mechanisms in GaN-based heterojunction channel quantum wells. The method determines the luminescence decay time of the AlGaN/GaN-based heterojunction channel carrier according to a smooth line scatter diagram of 'carrier peak concentration-time', and then determines the service life of the AlGaN/GaN-based heterojunction channel carrier according to the luminescence decay time under the condition of assuming that the service lives of electrons and holes are the same. The method can deeply know the physical mechanism of the device and evaluate the reliability of the device.
Description
Technical field
The present invention relates to carrier relaxation physical mechanism technical field, the particularly a kind of method in definite AlGaN/GaN base heterojunction channel carrier life-span in GaN base heterojunction structure raceway groove quantum well.
Background technology
At present, in semiconductor devices, high speed and small size are the both directions of its development, to the understanding of the micro kinetics process of the various charge carriers in material, are to realize at a high speed and the basis of small size semiconductor devices.Therefore, the understanding in the semiconductor interior microscopic world is just seemed and is even more important.In semiconductor, exist various ions, comprise electronics, hole, optical phonon, plasma, magneton, exciton and coupled modes etc.The life-span yardstick existing after ion in above-mentioned semiconductor is excited is ps magnitude normally.Therefore, about the interaction between charge carrier generation mechanism, dynamic process and the information that is accompanied by various effects, can obtain by direct ultrafast measurement, comprise psec and femtosecond.And, in time domain measurement, can obtain frequency domain information, the characteristic spectrum information in the same time can not characterize different information that can inter-stages.Therefore, for the quick electronic device response of exploitation, need to should there is a understanding clearly to the various ion dynamics processes of surrounding and watching in semiconductor.By measuring the luminous transient method of GaN material band edge, can directly obtain the life-span of charge carrier.
The development of femtosecond laser technology makes to come true to occurring in the research of the ultrafast dynamic process in semiconductor.Femtosecond laser is a kind of laser with impulse form running, and the duration is very short, only has several femtoseconds, and because femtosecond laser has quick and high-resolution feature, it can observe the ultrafast motion process in atom and electronics aspect.Pumping-Detection Techniques are most important a kind of technology in the ultrafast dynamic process of probing semiconductor in ultrafast Detection Techniques.In typical pumping-Detection Techniques, a ultra-short pulse laser is divided into pump light and surveys light, this two-beam has a variable optical delay, pump light is usually used to vitalizing semiconductor, survey light conventionally than a lot of a little less than pump light, it is commonly used to survey the variation of the properties of samples being caused by pump light, and this evolution changing in time realizes by the delay changing between two-beam.Survey light and carried a lot of information, comprise the dynamic processes such as the absorption of interband transition, excited state, the diffusion of charge carrier and surface recombination.Semicoductor radiating is compound from being taking it by and large divided into three processes:
A. the charge carrier in semiconductor injects by light or electricity injects and to be energized into high-energy state and in unstable excited state, at this moment, the charge carrier in semiconductor is in nonequilibrium condition.
B. the relaxation of nonequilibrium carrier.
C. the radiation recombination of charge carrier is luminous.
Take that to excite the electronics of generation be example, electronics is excited to conduction band from valence band two approach later:
The one, it is luminous that valence band formation radiation recombination is got back in transition;
Exception be by process relaxation such as transmitting phonon etc. at the bottom of conduction band, electronics is luminous to valence band transition and hole-recombination again at the bottom of conduction band, this is a kind of competition process.
In general, radiation recombination luminescent lifetime is even higher about subnanosecond or nanosecond greatly, and carrier relaxation process is generally in psec subnanosecond level even.
Summary of the invention
In order the physical mechanism of device to be carried out to deep understanding and device reliability to be evaluated, the present invention proposes a kind of method in definite AlGaN/GaN base heterojunction channel carrier life-span.
The method in definite AlGaN/GaN base heterojunction channel carrier life-span provided by the invention comprises the following steps:
0ns is set as to the 1st moment constantly, from 0ns, start every through 1 sample interval 1 moment of setting, acquisition time resolved spectroscopy, make described time resolved spectroscopy from without peak state to having peak state again to without peak state, form 10 time resolved spectroscopy figure, the ordinate of described time resolved spectroscopy figure is the concentration value of the light activated charge carrier of described pumping, and horizontal ordinate is wavelength;
Choose respectively the peak value of the carrier concentration of each time resolved spectroscopy figure in described 10 time resolved spectroscopy figure, the wavelength that the peak value of the carrier concentration of described 10 time resolved spectroscopy figure is corresponding is identical;
The peak value of carrier concentration of each time resolved spectroscopy figure of take is ordinate, take the time corresponding with the peak value of each time resolved spectroscopy figure to retouch out " charge carrier peak concentration-time " sweep scatter diagram as horizontal ordinate;
According to described " charge carrier peak concentration-time " sweep scatter diagram, determine the luminescence decay time of AlGaN/GaN base heterojunction channel carrier;
Under the electronics condition identical with hole life, according to described luminescence decay time, determine the AlGaN/GaN base heterojunction channel carrier life-span.
As preferably, described AlGaN/GaN base device material be forbidden band material, described energy gap is 3.4ev.
As preferably, described sample interval is 1ns.
The method in definite AlGaN/GaN base heterojunction channel carrier life-span provided by the invention can be carried out deep understanding and device reliability is evaluated the physical mechanism of device.
Accompanying drawing explanation
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 1 provides for the embodiment of the present invention is at 0ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 2 provides for the embodiment of the present invention is at 1ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 3 provides for the embodiment of the present invention is at 2ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 4 provides for the embodiment of the present invention is at 3ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 5 provides for the embodiment of the present invention is at 4ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 6 provides for the embodiment of the present invention is at 5ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 7 provides for the embodiment of the present invention is at 6ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 8 provides for the embodiment of the present invention is at 7ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Fig. 9 provides for the embodiment of the present invention is at 8ns time resolved spectroscopy figure constantly;
The method in definite AlGaN/GaN base heterojunction channel carrier life-span that Figure 10 provides for the embodiment of the present invention is at 9ns time resolved spectroscopy figure constantly.
" charge carrier peak concentration-time " sweep scatter diagram of the method in definite AlGaN/GaN base heterojunction channel carrier life-span that Figure 11 provides for the embodiment of the present invention.
Embodiment
In order to understand the present invention in depth, below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
In the method in definite AlGaN/GaN base heterojunction channel carrier life-span provided by the invention, AlGaN/GaN base device material be forbidden band material, energy gap is 3.4ev, the method comprises the following steps:
Step 1: constantly start to be set as the 1st moment from 0ns, every through 1 sample interval 1 moment of setting, acquisition time resolved spectroscopy, make time resolved spectroscopy from without peak state to having peak state again to without peak state, form 10 time resolved spectroscopy figure, referring to accompanying drawing 1～10, the ordinate of time resolved spectroscopy figure is the concentration value of the light activated charge carrier of pumping, and horizontal ordinate is wavelength; In the present embodiment, sample interval is 1ns.
Step 2: the peak value of choosing respectively the carrier concentration of each time resolved spectroscopy figure in 10 time resolved spectroscopy figure, the wavelength that the peak value of the carrier concentration of 10 time resolved spectroscopy figure is corresponding is identical, in the present embodiment, the wavelength that the peak value of the carrier concentration of these 10 time resolved spectroscopy figure is corresponding is 370nm
Step 3: the peak value of carrier concentration of each time resolved spectroscopy figure of take is ordinate, take the time corresponding with the peak value of each time resolved spectroscopy figure to retouch out " charge carrier peak concentration-time " sweep scatter diagram as horizontal ordinate, referring to accompanying drawing 11.
Step 4: determine the luminescence decay time of AlGaN/GaN base heterojunction channel carrier according to " charge carrier peak concentration-time " sweep scatter diagram, in the present embodiment, luminescence decay time is 9ns,
Step 5: under the supposition electronics condition identical with hole life, according to luminescence decay time, determine the AlGaN/GaN base heterojunction channel carrier life-span, in the present embodiment, according to luminescence decay time, determine that the AlGaN/GaN base heterojunction channel carrier life-span is 18ns.
The method in definite AlGaN/GaN base heterojunction channel carrier life-span provided by the invention can be carried out deep understanding and device reliability is evaluated the physical mechanism of device.
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only the specific embodiment of the present invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. the method in definite AlGaN/GaN base heterojunction channel carrier life-span, is characterized in that, comprises the following steps:
0ns is set as to the 1st moment constantly, from 0ns, start every through 1 sample interval 1 moment of setting, acquisition time resolved spectroscopy, make described time resolved spectroscopy from without peak state to having peak state again to without peak state, form 10 time resolved spectroscopy figure, the ordinate of described time resolved spectroscopy figure is the concentration value of the light activated charge carrier of pumping, and horizontal ordinate is wavelength;
Choose respectively the peak value of the carrier concentration of each time resolved spectroscopy figure in described 10 time resolved spectroscopy figure, the wavelength that the peak value of the carrier concentration of described 10 time resolved spectroscopy figure is corresponding is identical;
The peak value of carrier concentration of each time resolved spectroscopy figure of take is ordinate, take the time corresponding with the peak value of each time resolved spectroscopy figure to retouch out " charge carrier peak concentration-time " sweep scatter diagram as horizontal ordinate;
According to described " charge carrier peak concentration-time " sweep scatter diagram, determine the luminescence decay time of AlGaN/GaN base heterojunction channel carrier;
Under the electronics condition identical with hole life, according to described luminescence decay time, determine the AlGaN/GaN base heterojunction channel carrier life-span.
2. method according to claim 1, is characterized in that, the material of described AlGaN/GaN base device is forbidden band material, and described energy gap is 3.4ev.
3. method according to claim 1, is characterized in that, described sample interval is 1ns.
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| RU2624604C1 (en) * | 2016-03-24 | 2017-07-04 | Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) | Method for determining relaxation degree of nitrid heterostructure barrier layer |
| CN106370630B (en) * | 2016-09-05 | 2018-11-09 | 上海空间电源研究所 | The Time-Resolved Photoluminescence Spectra simulation of compound semiconductor double-heterostructure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1063159A (en) * | 1992-01-23 | 1992-07-29 | 中国科学院上海技术物理研究所 | Measure the new method of semiconductor nonequilibrium carrier lifetime |
| CN101726695A (en) * | 2008-10-17 | 2010-06-09 | 和舰科技(苏州)有限公司 | Method for testing service life of NMOS hot carrier injection |
| CN101802629A (en) * | 2007-09-11 | 2010-08-11 | 硅绝缘体技术有限公司 | Measure the method for life and the equipment of charge carrier |
| CN102236063A (en) * | 2010-04-21 | 2011-11-09 | 中国科学院微电子研究所 | Method for predicting service life of hot carrier of silicon-on-insulator device |
| CN102495345A (en) * | 2011-12-06 | 2012-06-13 | 上海集成电路研发中心有限公司 | Method for determining service life of hot carrier injection device |
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| US7811943B2 (en) * | 2004-12-22 | 2010-10-12 | Cree, Inc. | Process for producing silicon carbide crystals having increased minority carrier lifetimes |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1063159A (en) * | 1992-01-23 | 1992-07-29 | 中国科学院上海技术物理研究所 | Measure the new method of semiconductor nonequilibrium carrier lifetime |
| CN101802629A (en) * | 2007-09-11 | 2010-08-11 | 硅绝缘体技术有限公司 | Measure the method for life and the equipment of charge carrier |
| CN101726695A (en) * | 2008-10-17 | 2010-06-09 | 和舰科技(苏州)有限公司 | Method for testing service life of NMOS hot carrier injection |
| CN102236063A (en) * | 2010-04-21 | 2011-11-09 | 中国科学院微电子研究所 | Method for predicting service life of hot carrier of silicon-on-insulator device |
| CN102495345A (en) * | 2011-12-06 | 2012-06-13 | 上海集成电路研发中心有限公司 | Method for determining service life of hot carrier injection device |
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