CN102736011A - Method for determining service life of AlGaN/GaN based heterojunction channel current carrier - Google Patents
Method for determining service life of AlGaN/GaN based heterojunction channel current carrier Download PDFInfo
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- CN102736011A CN102736011A CN2012102386411A CN201210238641A CN102736011A CN 102736011 A CN102736011 A CN 102736011A CN 2012102386411 A CN2012102386411 A CN 2012102386411A CN 201210238641 A CN201210238641 A CN 201210238641A CN 102736011 A CN102736011 A CN 102736011A
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Abstract
The invention discloses a method for determining the service life of an AlGaN/GaN based heterojunction channel current carrier, belonging to the technical field of current carrier relaxation mechanism in the GaN based heterostructure channel quantum well. In the method, the luminescence decay time of the AlGaN/GaN based heterojunction channel current carrier is determined according to the 'current carrier peak concentration-time' smooth line scatter diagram, and then, under the condition of supposing that the electron and the hole have the same service life, the service life of the AlGaN/GaN based heterojunction channel current carrier is determined according to the luminescence decay time. The method can deeply recognize the physical mechanism of devices and evaluate the reliability of the devices.
Description
Technical field
The present invention relates to charge carrier relaxation physical mechanism technical field in the GaN base heterojunction structure raceway groove quantum well, particularly a kind of definite AlGaN/GaN base heterojunction channel carrier method of life.
Background technology
At present, in semiconductor devices, be the both direction of its development at a high speed with small size, be the bases of realizing high speed and small size semiconductor devices to the understanding of the micro kinetics process of the various charge carriers in the material.Therefore, the understanding in the semiconductor interior microscopic world is just seemed be even more important.In semiconductor, exist various ions, comprise electronics, hole, optical phonon, plasma, magneton, exciton and coupled modes etc.The life-span yardstick that exists after ion in the above-mentioned semiconductor is excited is the ps magnitude normally.Therefore, can obtain through direct ultrafast measurement, comprise psec and femtosecond about the interaction between the charge carrier generation mechanism, dynamic process and the information that is accompanied by various effects.And, in time domain measurement, can obtain frequency domain information, different interior constantly characteristic spectrum information can characterize the information of different ability inter-stages.Therefore, need a understanding clearly should be arranged to the various ion dynamics processes of surrounding and watching in the semiconductor for the quick electronic device response of exploitation.Can directly obtain the life-span of charge carrier through the luminous transient method of measurement GaN material band edge.
The development of femtosecond laser technology comes true the research to occurring in the ultrafast dynamic process in the semiconductor.Femtosecond laser is a kind of laser with the impulse form running, and the duration is very short, has only several femtoseconds, because femtosecond laser has quick and high-resolution characteristics, it can observe the ultrafast motion process on atom and the electronics aspect.Pumping-Detection Techniques are most important a kind of technology in the ultrafast dynamic process of probing semiconductor in the ultrafast Detection Techniques.In typical pumping-Detection Techniques; A ultra-short pulse laser is divided into pump light and surveys light; This two-beam has a variable optical delay, and pump light is used to vitalizing semiconductor usually, surveys light usually than a lot of a little less than the pump light; It is commonly used to survey the variation of the properties of samples that is caused by pump light, and this evolution that changes in time realizes through the delay that changes between the two-beam.Survey light and carried a lot of information, comprise the dynamic processes such as diffusion and surface recombination of absorption, the charge carrier of interband transition, excited state.Semicoductor radiating is compound from taking it by and large being divided into three processes:
A. the charge carrier in the semiconductor is gone into through light beam or electricity injects and to be energized into high-energy state and to be in unstable excited state, and at this moment, the charge carrier in the semiconductor is in nonequilibrium condition.
B. the relaxation of nonequilibrium carrier.
C. the radiation recombination of charge carrier is luminous.
With the electronics that excites generation is example, and electronics is excited to conduction band from valence band has two approach later on:
The one, it is luminous that valence band formation radiation recombination is got back in transition;
Exception be through process relaxation such as emission phonon etc. at the bottom of the conduction band, electronics is luminous to valence and hole-recombination again at the bottom of conduction band, this is a kind of competition process.
In general, the radiation recombination luminescent lifetime is greatly about subnanosecond or nanosecond even higher, and the charge carrier relaxation process is generally in psec even subnanosecond level.
Summary of the invention
For the physical mechanism to device carries out deep understanding and device reliability is estimated, the present invention proposes a kind of definite AlGaN/GaN base heterojunction channel carrier method of life.
Definite AlGaN/GaN base heterojunction channel carrier method of life provided by the invention may further comprise the steps:
0ns is set at the 1st moment constantly; Begin every through 1 sample interval 1 moment of setting from 0ns; The acquisition time resolved spectroscopy, make said time resolved spectroscopy from no peak state to peak state being arranged again to no peak state, form 10 time resolved spectroscopy figure; The ordinate of said time resolved spectroscopy figure is the concentration value of the light activated charge carrier of said pumping, and horizontal ordinate is a wavelength;
Choose the peak value of the carrier concentration of each time resolved spectroscopy figure among said 10 time resolved spectroscopy figure respectively, the wavelength that the peak value of the carrier concentration of said 10 time resolved spectroscopy figure is corresponding is identical;
Peak value with the carrier concentration of each time resolved spectroscopy figure is an ordinate, with the corresponding time of the peak value of each time resolved spectroscopy figure be that horizontal ordinate is retouched out " charge carrier peak concentration-time " sweep scatter diagram;
Confirm the luminescence decay time of AlGaN/GaN base heterojunction channel carrier according to said " charge carrier peak concentration-time " sweep scatter diagram;
Under the electronics condition identical, confirm the AlGaN/GaN base heterojunction channel carrier life-span according to said luminescence decay time with hole life.
As preferably, said AlGaN/GaN base device material be the forbidden band material, said energy gap is 3.4ev.
As preferably, said sample interval is 1ns.
Definite AlGaN/GaN base heterojunction channel carrier method of life provided by the invention can be carried out deep understanding and device reliability is estimated to the physical mechanism of device.
Description of drawings
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 1 provides for the embodiment of the invention is at 0ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 2 provides for the embodiment of the invention is at 1ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 3 provides for the embodiment of the invention is at 2ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 4 provides for the embodiment of the invention is at 3ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 5 provides for the embodiment of the invention is at 4ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 6 provides for the embodiment of the invention is at 5ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 7 provides for the embodiment of the invention is at 6ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 8 provides for the embodiment of the invention is at 7ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Fig. 9 provides for the embodiment of the invention is at 8ns time resolved spectroscopy figure constantly;
Definite AlGaN/GaN base heterojunction channel carrier method of life that Figure 10 provides for the embodiment of the invention is at 9ns time resolved spectroscopy figure constantly.
" charge carrier peak concentration-time " sweep scatter diagram of definite AlGaN/GaN base heterojunction channel carrier method of life that Figure 11 provides for the embodiment of the invention.
Embodiment
In order to understand the present invention in depth, the present invention is elaborated below in conjunction with accompanying drawing and specific embodiment.
In definite AlGaN/GaN base heterojunction channel carrier method of life provided by the invention, the AlGaN/GaN base device material be the forbidden band material, energy gap is 3.4ev, this method may further comprise the steps:
Step 1: begin to be set at the 1st moment constantly from 0ns; Whenever, set 1 moment through 1 sample interval, the acquisition time resolved spectroscopy, make time resolved spectroscopy from no peak state to peak state being arranged again to no peak state; Form 10 time resolved spectroscopy figure; Referring to accompanying drawing 1～10, the ordinate of time resolved spectroscopy figure is the concentration value of the light activated charge carrier of pumping, and horizontal ordinate is a wavelength; In the present embodiment, the sample interval is 1ns.
Step 2: the peak value of choosing the carrier concentration of each time resolved spectroscopy figure among 10 time resolved spectroscopy figure respectively; The wavelength that the peak value of the carrier concentration of 10 time resolved spectroscopy figure is corresponding is identical; In the present embodiment, the wavelength that the peak value of the carrier concentration of these 10 time resolved spectroscopy figure is corresponding is 370nm
Step 3: the peak value with the carrier concentration of each time resolved spectroscopy figure is an ordinate, with the corresponding time of the peak value of each time resolved spectroscopy figure be that horizontal ordinate is retouched out " charge carrier peak concentration-time " sweep scatter diagram, referring to accompanying drawing 11.
Step 4: confirm the luminescence decay time of AlGaN/GaN base heterojunction channel carrier according to " charge carrier peak concentration-time " sweep scatter diagram, in the present embodiment, luminescence decay time is 9ns,
Step 5: under the supposition electronics condition identical with hole life; Confirm the AlGaN/GaN base heterojunction channel carrier life-span according to luminescence decay time; In the present embodiment, confirm that according to luminescence decay time the AlGaN/GaN base heterojunction channel carrier life-span is 18ns.
Definite AlGaN/GaN base heterojunction channel carrier method of life provided by the invention can be carried out deep understanding and device reliability is estimated to the physical mechanism of device.
Above-described embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. a definite AlGaN/GaN base heterojunction channel carrier method of life is characterized in that, may further comprise the steps:
0ns is set at the 1st moment constantly; Begin every through 1 sample interval 1 moment of setting from 0ns; The acquisition time resolved spectroscopy, make said time resolved spectroscopy from no peak state to peak state being arranged again to no peak state, form 10 time resolved spectroscopy figure; The ordinate of said time resolved spectroscopy figure is the concentration value of the light activated charge carrier of said pumping, and horizontal ordinate is a wavelength;
Choose the peak value of the carrier concentration of each time resolved spectroscopy figure among said 10 time resolved spectroscopy figure respectively, the wavelength that the peak value of the carrier concentration of said 10 time resolved spectroscopy figure is corresponding is identical;
Peak value with the carrier concentration of each time resolved spectroscopy figure is an ordinate, with the corresponding time of the peak value of each time resolved spectroscopy figure be that horizontal ordinate is retouched out " charge carrier peak concentration-time " sweep scatter diagram;
Confirm the luminescence decay time of AlGaN/GaN base heterojunction channel carrier according to said " charge carrier peak concentration-time " sweep scatter diagram;
Under the electronics condition identical, confirm the AlGaN/GaN base heterojunction channel carrier life-span according to said luminescence decay time with hole life.
2. method according to claim 1 is characterized in that, said AlGaN/GaN base device material be the forbidden band material, said energy gap is 3.4ev.
3. method according to claim 1 is characterized in that, said sample interval is 1ns.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106370630A (en) * | 2016-09-05 | 2017-02-01 | 上海空间电源研究所 | Time resolution photoluminescence simulation method of compound semiconductor double heterojunction structure |
| RU2624604C1 (en) * | 2016-03-24 | 2017-07-04 | Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) | Method for determining relaxation degree of nitrid heterostructure barrier layer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1063159A (en) * | 1992-01-23 | 1992-07-29 | 中国科学院上海技术物理研究所 | Measure the new method of semiconductor nonequilibrium carrier lifetime |
| CN101726695A (en) * | 2008-10-17 | 2010-06-09 | 和舰科技(苏州)有限公司 | Method for testing service life of NMOS hot carrier injection |
| CN101802629A (en) * | 2007-09-11 | 2010-08-11 | 硅绝缘体技术有限公司 | Measure the method for life and the equipment of charge carrier |
| US20100320477A1 (en) * | 2004-12-22 | 2010-12-23 | Cree, Inc. | Process for producing silicon carbide crystals having increased minority carrier lifetimes |
| CN102236063A (en) * | 2010-04-21 | 2011-11-09 | 中国科学院微电子研究所 | Method for predicting service life of hot carrier of silicon on insulator (SOI) device |
| CN102495345A (en) * | 2011-12-06 | 2012-06-13 | 上海集成电路研发中心有限公司 | Method for determining service life of hot carrier injection device |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1063159A (en) * | 1992-01-23 | 1992-07-29 | 中国科学院上海技术物理研究所 | Measure the new method of semiconductor nonequilibrium carrier lifetime |
| US20100320477A1 (en) * | 2004-12-22 | 2010-12-23 | Cree, Inc. | Process for producing silicon carbide crystals having increased minority carrier lifetimes |
| CN101802629A (en) * | 2007-09-11 | 2010-08-11 | 硅绝缘体技术有限公司 | Measure the method for life and the equipment of charge carrier |
| CN101726695A (en) * | 2008-10-17 | 2010-06-09 | 和舰科技(苏州)有限公司 | Method for testing service life of NMOS hot carrier injection |
| CN102236063A (en) * | 2010-04-21 | 2011-11-09 | 中国科学院微电子研究所 | Method for predicting service life of hot carrier of silicon on insulator (SOI) device |
| CN102495345A (en) * | 2011-12-06 | 2012-06-13 | 上海集成电路研发中心有限公司 | Method for determining service life of hot carrier injection device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2624604C1 (en) * | 2016-03-24 | 2017-07-04 | Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) | Method for determining relaxation degree of nitrid heterostructure barrier layer |
| CN106370630A (en) * | 2016-09-05 | 2017-02-01 | 上海空间电源研究所 | Time resolution photoluminescence simulation method of compound semiconductor double heterojunction structure |
| CN106370630B (en) * | 2016-09-05 | 2018-11-09 | 上海空间电源研究所 | The Time-Resolved Photoluminescence Spectra simulation of compound semiconductor double-heterostructure |
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