CN102725847B - Integrated detector, and detecting method thereof, optical module and optical network system - Google Patents
Integrated detector, and detecting method thereof, optical module and optical network system Download PDFInfo
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- CN102725847B CN102725847B CN201180002967.8A CN201180002967A CN102725847B CN 102725847 B CN102725847 B CN 102725847B CN 201180002967 A CN201180002967 A CN 201180002967A CN 102725847 B CN102725847 B CN 102725847B
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/27—Arrangements for networking
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- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
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Abstract
The present invention discloses an integrated detector, a detecting method thereof, an optical module and an optical network system, and relates to the field of communication. When the intensity of a converted electrical signal being detected in a detecting unit is realized, a data recovering unit can simultaneously recover data signals carried on the light; and further, complexity of a packaging process is reduced. The integrated detector comprises a detecting unit and a data recovering unit, wherein the detecting unit is used for receiving a first optical signal sent by an optical network unit, and after photoelectric conversion, the intensity of the converted electrical signal is detected; and the data recovering unit is used for receiving a first optical signal sent by an optical line terminal, and after photoelectric conversion, the data signals carried on the light are recovered.
Description
Technical field
The present invention relates to the communications field, relate in particular to a kind of integrated detector and detection method thereof, optical module, optical network system.
Background technology
In recent years, passive optical-fiber network (Passive Optical Network, PON) technology relies on its point-to-multipoint network architecture and the advantage such as passive, at optical fiber access (Fiber to the x, FTTx) field, more and more be subject to the favor of operator, and the large scale deployment of passive optical-fiber network, be directly limited by the impact of optical module cost.Yet, at present, in optical module, need to arrange two detectors, to carry out respectively detection and the conversion of light signal, this just makes the packaging technology of product comparatively complicated, and optics is more, and cost is high.
Summary of the invention
Embodiments of the invention provide a kind of integrated detector and detection method thereof, optical module, optical network system, when can realize the signal of telecommunication after detecting unit detects conversion strong and weak, data recovery unit recovers the data-signal being carried on light, further, reduced the complexity of packaging technology.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, the embodiment of the present invention provides a kind of integrated detector, comprising: detecting unit and data recovery unit, wherein,
Described detecting unit, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion;
Described data recovery unit, for receiving the second light signal sending from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light.
On the one hand, the embodiment of the present invention provides a kind of detection method of integrated detector, and described method comprises:
The first light signal that reception sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion;
The second light signal that reception sends from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light.
On the one hand, the embodiment of the present invention provides a kind of optical module, comprise: laser, filter and the first fiber waveguide, described laser is connected with described filter by described the first fiber waveguide, it is characterized in that, described optical module also comprises: integrated detector and the second fiber waveguide, and described integrated detector is connected with described laser by described the second fiber waveguide; Wherein,
Described laser, for generation of the first light signal, sends to described integrated detector by described the first fiber waveguide by described the first light signal;
Described filter, the second light signal sending for receiving optical line terminal, sends to described integrated detector by described the second light signal;
Described integrated detector, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion; And receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light.
On the one hand, the embodiment of the present invention provides a kind of smooth network system, described optical network system comprises: optical line terminal, optical network unit and optical distribution network, described optical line terminal is connected with described optical network unit by optical distribution network, and described optical network unit comprises any one above-mentioned integrated detector.
A kind of integrated detector and detection method thereof that the embodiment of the present invention provides, optical module, optical network system, by detecting unit and data recovery unit are set, wherein, detecting unit can receive the first light signal sending from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after conversion, data recovery unit can receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light, thereby when having realized the signal of telecommunication after detecting unit detects conversion strong and weak, data recovery unit recovers the data-signal being carried on light, further, reduced the complexity of packaging technology.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the integrated detector structural representation of the embodiment of the present invention;
Fig. 2 is the integrated detector manufacture method flow chart of the embodiment of the present invention;
Fig. 3 is the detection method schematic flow sheet of the integrated detector of the embodiment of the present invention;
Fig. 4 is the optical module structure schematic diagram of the embodiment of the present invention;
Fig. 5 is the light network system structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment mono-
The embodiment of the present invention provides a kind of integrated detector 1, as shown in Figure 1, and detecting unit 12 and data recovery unit 13, wherein,
Described detecting unit 12, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion;
Described data recovery unit 13, for receiving the second light signal sending from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light.
Further, integrated detector 1 also comprises: electricity isolated layer 103, and for the signal of telecommunication of the signal of telecommunication of described detecting unit 12 and described data recovery unit 13 is isolated.
Further, the incident direction of the first light signal that described detecting unit 12 receives is contrary with the incident direction of the second light signal that described data recovery unit 13 receives, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer 103, or the incident direction of the first light signal of described detecting unit 12 receptions is identical with the incident direction of the second light signal of described data recovery unit 12 receptions, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer 103.
Further, integrated detector 1 also comprises: substrate 101, described detecting unit 12 and described data recovery unit 13 are all integrated on described substrate 101, and described substrate 101 is semi-insulating inp material.
Further, detecting unit 12 comprises: the first table top, the sub-n utmost point layer 104 of the first metal electrode layer 109, first and the first reflecting surface 114, wherein,
Described the first table top is on described substrate 101, to deposit successively after n utmost point layer 102, absorbed layer, P utmost point layer, utilize photoetching process, etching P utmost point layer and absorbed layer are formed, and described n utmost point layer 102 is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the first metal electrode layer 109 is after depositing metal layers, to utilize chemical corrosion method on described the first table top, corrodes described metal level formed;
Described the first sub-n utmost point layer 104 is to utilize wet etching method, and n utmost point layer 102 is formed described in etching;
Described the first reflecting surface 114 is to utilize wet etching method, and the first sub-n utmost point layer 104 is formed described in etching;
Described data recovery unit 13 comprises: the second table top, the sub-n utmost point layer 105 of the second metal electrode layer 113, second and the second reflecting surface 115, wherein,
Described the second table top is on described substrate 101, to deposit successively after described n utmost point layer 102, absorbed layer, P utmost point layer, utilize photoetching process, described in etching, P utmost point layer and absorbed layer are formed, and described n utmost point layer 102 is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the second metal electrode layer 113 is after depositing metal layers, to utilize chemical corrosion method on described the second table top, corrodes described metal level formed;
Described the second sub-n utmost point layer 105 is to utilize wet etching method, and n utmost point layer 102 is formed described in etching;
Described the second reflecting surface 115 is to utilize wet etching method, and the second sub-n utmost point layer 105 is formed described in etching.
Further, described detecting unit 12 also comprises: the first light inlet inclined-plane 116, described the first light inlet inclined-plane 116 is to utilize wet etching method, and the first sub-n utmost point layer 104 is formed described in etching, and described the first sub-n utmost point layer 104 is injected on the first light inlet inclined-plane 116 described in described the first optical signals;
Described data recovery unit 13 also comprises: the second light inlet inclined-plane 117, described the second light inlet inclined-plane 117 is to utilize wet etching method, described in etching, the second sub-n utmost point layer 105 is formed, and described the second sub-n utmost point layer 105 is injected on the second light inlet inclined-plane 117 described in described the second optical signals.
The integrated detector that the embodiment of the present invention provides, by detecting unit and data recovery unit are set, wherein, detecting unit can receive the first light signal sending from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after conversion, data recovery unit can receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light, thereby when having realized the signal of telecommunication after detecting unit detects conversion strong and weak, data recovery unit recovers the data-signal being carried on light, further, reduced the complexity of packaging technology.
Embodiment bis-
The embodiment of the present invention provides a kind of integrated detector 1, as shown in Figure 1, the concrete structure of integrated detector 1 comprises detecting unit 12, data recovery unit 13, and detecting unit 12 and data recovery unit 13 are all arranged on the substrate 101 of semi-insulating inp material, wherein
Detecting unit 12 comprises:
The sub-n utmost point layer 104 of the first sub-n utmost point layer 104, the first can be the indium phosphide of N-shaped doping;
The first absorbed layer 106, the first absorbed layers 106 that arrange on the first sub-n utmost point layer 104 can be InGaAsP material;
The first electrode layer 107 arranging on the first absorbed layer 106, the first electrode 107 can comprise a P utmost point layer 108 and the first metal electrode layer 109, wherein, a P utmost point layer 108 can be the indium phosphide of P type doping, and the first metal electrode layer 109 can be metal material;
The first reflecting surface 114 arranging in the first sub-n utmost point layer 104;
By the first sub-n utmost point layer 104, the first absorbed layer 106, the one P utmost point layer 108, the detecting unit 12 that the first metal electrode layer 109 and the first reflecting surface 114 form, can receive the light from laser sends in active optical module, be the first light signal, and under the effect of the first metal electrode layer 109 in reverse voltage state, detecting unit 12 makes the first light signal through the first sub-n utmost point layer 104, by the reflex of the first reflecting surface 114, inject the first absorbed layer 106, to detect the power of the signal of telecommunication after conversion, detecting unit 12 is now equivalent to an independent monitoring detector,
Data recovery unit 13 comprises:
The sub-n utmost point layer 105 of the second sub-n utmost point layer 105, the second can be the indium phosphide of N-shaped doping;
The second absorbed layer 110, the first absorbed layers 110 that arrange on the second sub-n utmost point layer 105 can be InGaAsP material;
The second electrode lay 111 arranging on the second absorbed layer 110, the first electrode 111 can comprise the 2nd P utmost point layer 112 and the second metal electrode layer 113, wherein, the 2nd P utmost point layer 112 can be the indium phosphide of P type doping, and the second metal electrode layer 113 can be metal material;
The second reflecting surface 115 arranging in the second sub-n utmost point layer 105;
By the second sub-n utmost point layer 105, the second absorbed layer 110, the 2nd P utmost point layer 112, the data recovery unit 13 that the second metal electrode layer 113 and the second reflecting surface 115 form, can receive the light from optical fiber by active optical module median filter, be the second light signal, and under the effect of the second metal electrode layer 113 in reverse voltage state, data recovery unit 117 makes the second light signal through the second sub-n utmost point layer 105, by the reflex of the second reflecting surface 115, inject the second absorbed layer 110, so that light signal is converted into the signal of telecommunication, recover the data-signal being carried on light, data recovery unit 13 is now equivalent to an independent photodetector.
Further, integrated detector 1 also comprises electricity isolated layer 103, and electricity isolated layer 103 can be isolated the signal of telecommunication of the signal of telecommunication of detecting unit 12 and data recovery unit 13, and electricity isolated layer 103 is specifically as follows organic polymer or air;
It should be noted that, the first metal electrode layer 109 can be divided into positive metal electrode 1091, negative metal electrode 1092, wherein, positive metal electrode 1091 connects positive voltage and contacts with the first sub-n utmost point layer 104, negative metal electrode 1092 connects negative voltage or ground connection contacts with a P utmost point layer 108, under the acting in conjunction of positive metal electrode 1091, negative metal electrode 1092, detecting unit 12 is just always in reverse voltage state, to detect the power of incident optical signal like this.Same, the second metal electrode layer 113 also can be divided into positive metal electrode 1131, negative metal electrode 1132, wherein, positive metal electrode 1131 connects positive voltage and contacts with the second sub-n utmost point layer 105, negative metal electrode 1132 connects negative voltage and contacts with the 2nd P utmost point layer 112, and under the acting in conjunction of positive metal electrode 1131, negative metal electrode 1132, data recovery unit 13 is just always in reverse voltage state like this, the light signal of incident is converted into current signal, recovers the data-signal being carried on light.
Exemplary, the first light signal is parallel to electricity isolated layer 103 with the incident direction incident direction contrary and the first light signal and the second light signal of the second light signal, like this, can avoid the first light signal and the second light signal to crosstalk injecting integrated detector 1 front and back, and, under the effect of electricity isolated layer 103, also avoided the first light signal and the second light signal that electricity occurs after opto-electronic conversion and crosstalked.
The above-mentioned description to the incident direction of the first light signal and the second light signal is only exemplary; certainly also can adopt other incident mode; as identical in incident direction and the first light signal is parallel with electricity isolated layer with the incident direction of the second light signal; or incident direction is contrary and the first light signal is vertical with electricity isolated layer with the incident direction of the second light signal; because be all, to make integrated detector detect the power of the signal of telecommunication after conversion or recover the data-signal being carried on light; so principle is identical, repeat no more herein, but also should be within protection scope of the present invention.
As can be seen from Figure 1, by the first sub-n utmost point layer, the first absorbed layer, the one P utmost point layer, the detecting unit that the first metal electrode layer and the first reflecting surface form, can receive the light from laser sends in active optical module, be the first light signal, the first light signal enters the first sub-n utmost point layer, and propagate in the first sub-n utmost point layer, when the first light signal arrives the first reflecting surface, under the effect of the first reflecting surface, can inject the first absorbed layer, when the first light signal is injected the first absorbed layer, the detecting unit in reverse voltage state in the effect of the first metal electrode layer and always, can detect the luminous intensity of the first light signal, detecting unit is now equivalent to an independent monitoring detector.Same, the data recovery unit being formed by the second sub-n utmost point layer, the second absorbed layer, the 2nd P utmost point layer, the second metal electrode layer and the second reflecting surface, can receive the light from optical fiber by active optical module median filter, be the second light signal, the second light signal enters the second sub-n utmost point layer, and propagates in the second sub-n utmost point layer, when the second light signal arrives the second reflecting surface, under the effect of the second reflecting surface, can inject the second absorbed layer.When the second light signal is injected the second absorbed layer, the data recovery unit in reverse voltage state in the effect of the second metal electrode layer and always, incident optical signal can be converted into the signal of telecommunication, data recovery unit is now equivalent to an independent photodetector.
Further, the embodiment of the present invention is carried out exemplary illustration to the manufacture method of integrated detector 1, and as shown in Figure 2, manufacture method is:
S201, on substrate, deposit successively n utmost point layer, absorbed layer, P utmost point layer.
On the substrate of semi-insulating inp material, deposit successively the n utmost point layer of indium phosphide of N-shaped doping, the P utmost point layer of the indium phosphide of the absorbed layer of InGaAsP material and the doping of P type.
S202, utilize photoetching process, etching P utmost point layer and absorbed layer, form the first table top and the second table top, and First face comprises the first absorbed layer and a P utmost point layer, and the second table top comprises the second absorbed layer and the 2nd P utmost point layer.
Adopt photoetching process, can disposable etching absorbed layer, P utmost point layer, to form the first table top and the second table top, the edge of the first table top, the second table top can be not and n utmost point layer coincident, and have interval between the first table top and the second table top.First face comprises the first absorbed layer and a P utmost point layer, and the second table top comprises the second absorbed layer and the 2nd P utmost point layer.
It is to be noted; the manufacture method of the first table top and the second table top has just been described here; the shape of the first table top and the second table top is not limited; certain the first table top, the second table top can be circular, rectangles or other are irregularly shaped; specifically the shape by lattice is determined; but be all to adopt photoetching process, so manufacture method is identical, also should be in protection range of the present invention.
S203, on n utmost point layer, the first table top and the second table top depositing metal layers.
Utilizing photoetching process to etch after the first table top, the second table top, depositing metal layers on the n utmost point layer exposing and the first table top, the second table top.
S204, utilize chemical corrosion method, corroding metal layer, forms the first metal electrode layer, the second metal electrode layer.
It should be noted that, first metal electrode layer here can be divided into positive and negative metal electrode, and positive metal electrode connects positive voltage and is positioned on n utmost point layer, and and the first table top between gapped, negative metal electrode connects negative voltage or ground connection is positioned on the first table top, contacts with a P utmost point layer.Same, second metal electrode layer here also can be divided into positive and negative metal electrode, and positive metal electrode connects positive voltage and is positioned on n utmost point layer, and and the second table top between gapped, negative metal electrode connects negative voltage or ground connection is positioned on the second table top, contacts with the 2nd P utmost point layer.
S205, utilize wet etching method, etching n utmost point layer forms respectively the first light inlet inclined-plane, the second light inlet inclined-plane.
Utilize wet etching method, etching n utmost point layer, form the first light inlet inclined-plane and the second light inlet inclined-plane, its particular location can be the edge of n utmost point layer, the first light inlet inclined-plane and the second light inlet inclined-plane can be positioned at the same side of n utmost point layer, also can be positioned at the not homonymy of n utmost point layer, the first light inlet inclined-plane and the second light inlet inclined-plane not only can reduce incident reflection of light, and can reduce the interference that reverberation produces incident light.N utmost point layer is injected on first optical signals the first light inlet inclined-plane, and n utmost point layer is injected on second optical signals the second light inlet inclined-plane.
S206, utilize wet etching method, etching n utmost point layer, form electricity isolated layer, electricity isolated layer is divided into the first sub-n utmost point layer and the second sub-n utmost point layer by n utmost point layer, the sub-n utmost point of while etching first layer, the second sub-n utmost point layer, make to form the first reflecting surface in the first sub-n utmost point layer, in the second sub-n utmost point layer, form the second reflecting surface.
First it should be noted that, when step S206 draws after the concept of the first sub-n utmost point layer and the second sub-n utmost point layer, in step S205, the position on the first light inlet inclined-plane and the second light inlet inclined-plane is just clearer and more definite, in step S205, utilize wet etching to form the first light inlet inclined-plane and the second light inlet inclined-plane, this the first light inlet inclined-plane and the second light inlet inclined-plane lay respectively at the edge of the first sub-n utmost point layer and the second sub-n utmost point layer, and the degree of depth on the first light inlet inclined-plane and the second light inlet inclined-plane equals the thickness of n utmost point layer.But preferred, when carrying out wet etching, can be by extending etch period, etched portions substrate, enters substrate if scattering occurs incident light before incident, and the inclined-plane that is arranged in so substrate also can be brought into play its reflex and reduce incident reflection of light.Further, the first light inlet inclined-plane can be positioned at the edge of a side of the first table top, the second light inlet inclined-plane can be positioned at the edge of a side of the second table top, and the first light inlet inclined-plane and the second light inlet inclined-plane can homonymies, also homonymy not, the incident direction of such the first light signal and the second light signal is contrary or identical and be parallel to electricity isolated layer, can avoid the first light signal and the second light signal that optical crosstalk occurred before injecting integrated detector.
Utilize wet etching method, between the first table top and the second table top, form electricity isolated layer, electricity isolated layer is divided into the first sub-n utmost point layer and the second sub-n utmost point layer by n utmost point layer, and the first table top, the first metal electrode layer are positioned on the first sub-n utmost point layer, and the second table top, the second metal electrode layer are positioned on the second sub-n utmost point layer.This electricity isolated layer can be an air gap, also can be specially organic polymer, or other can be produced on the insulating material on semiconductor.
Meanwhile, utilize wet etching method, the sub-n utmost point of etching first layer, makes to form the first reflecting surface in the first sub-n utmost point layer, and this first reflecting surface, between the first table top and electricity isolated layer, can be reflected into the light through the first sub-n utmost point layer transmission in the first absorbed layer.Same, utilize wet etching method, the sub-n utmost point of etching second layer, makes to form the second reflecting surface in the second sub-n utmost point layer, this second reflecting surface, between the second table top and electricity isolated layer, can be reflected into the light through the second sub-n utmost point layer transmission in the second absorbed layer.
It is pointed out that the first reflecting surface, the second reflecting surface can be trapezoidal reflecting surface, this is that crystal orientation by crystal lattices determines.Basic characteristics of crystal are to have directivity, different along the different directions crystalline nature of lattice.For example, along certain specific crystal orientation, semiconductor device can be easy to dissociate and form a clean smooth plane of disruption.Same, on some specific crystal orientation, chemical corrosion liquid is also completely different to the corrosion rate of crystal.And for indium phosphide, after wet etching, can form one symmetrical trapezoidal, and the slope of hypotenuse is identical.According to semi-conductive crystal orientation characteristic, just in time can realize wet etching method one time, just can form the first reflecting surface and the second reflecting surface.
You need to add is that, in step S206, utilize wet etching to form electricity isolated layer, the first reflecting surface and the second reflecting surface, this electricity isolated layer is in n utmost point layer, the thickness that is electricity isolated layer equals n utmost point layer, the first reflecting surface and the second reflecting surface are respectively in the first sub-n utmost point layer and the second sub-n utmost point layer, the degree of depth of the first reflecting surface, the second reflecting surface equals the thickness of n utmost point layer, that is to say, step S206 utilizes the disposable etching of wet etching method to form electricity isolated layer, the first reflecting surface and the second reflecting surface.But preferred, when carrying out the etching of the first reflecting surface and the second reflecting surface, can be by extending etch period, etched portions substrate, if the light scattering of transmitting in n utmost point layer enters in substrate, the reflecting surface that is arranged in so substrate also can be brought into play its reflex and reflect light into the first absorbed layer or the second absorbed layer, now, etching forms electricity isolated layer, the first reflecting surface and the second reflecting surface can be divided into two steps, first utilize wet etching method, etching n utmost point layer, form electricity isolated layer, electricity isolated layer is divided into the first sub-n utmost point layer and the second sub-n utmost point layer by n utmost point layer, recycling wet etching method, the sub-n utmost point of etching first layer, the second sub-n utmost point layer and part substrate, form the first reflecting surface and the second reflecting surface.
So far, the integrated detector of the embodiment of the present invention completes, from the manufacture method of above-mentioned integrated detector, can find out, detecting unit 12 in Fig. 1 is identical with data recovery unit 13 structures, and be integrated on same substrate 101, and can disposablely on same substrate 101, produce detecting unit 12 and data recovery unit 13.
For the operation principle of this integrated detector is more clearly described, describe as shown in Figure 1.
First, the operation principle of detecting unit 12 is described, first optical signals the first light inlet inclined-plane enters the first sub-n utmost point layer, and propagate in the first sub-n utmost point layer, when the first light signal arrives the first reflecting surface, under the effect of the first reflecting surface, can inject the first absorbed layer.Because the logical positive electricity of the positive metal electrode of detecting unit is connected with the first sub-n utmost point layer, the logical negative electricity of negative metal electrode is connected with a P utmost point layer, therefore detecting unit is always in reverse voltage state, when the first light signal is injected the first absorbed layer, the first absorbed layer can detect the luminous intensity of the first light signal.
Secondly, the operation principle of data recovery unit 13 is described, second optical signals the second light inlet inclined-plane enters the second sub-n utmost point layer, and propagate in the second sub-n utmost point layer, when the second light signal arrives the second reflecting surface, under the effect of the second reflecting surface, can inject the second absorbed layer.Because the logical positive electricity of the positive metal electrode of data recovery unit is connected with the second sub-n utmost point layer, the logical negative electricity of negative metal electrode is connected with the 2nd P utmost point layer, therefore data recovery unit is always in reverse voltage state, when the second light signal is injected the second absorbed layer, the second absorbed layer can be converted into the signal of telecommunication by incident optical signal, the data-signal with recovering bearing on light.
The integrated detector that the embodiment of the present invention provides, by detecting unit is set, data recovery unit and electricity isolated layer, wherein, electricity isolated layer can be isolated the signal of telecommunication of the signal of telecommunication of detecting unit and data recovery unit, detecting unit can receive the first light signal sending from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after conversion, data recovery unit can receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light, thereby when having realized the signal of telecommunication after detecting unit detects conversion strong and weak, data recovery unit recovers the data-signal being carried on light, and there is not electricity and crosstalk in the signal of telecommunication in detecting unit and the signal of telecommunication in data recovery unit, further, reduced the complexity of packaging technology, improved the reliability of detector.
Embodiment tri-
The embodiment of the present invention provides a kind of detection method of integrated detector, and as shown in Figure 3, method comprises:
S301, detecting unit receive the first light signal sending from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after described conversion.
S302, data recovery unit receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light.
The detection method of the integrated detector that the embodiment of the present invention provides, can receive the first light signal sending from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after described conversion, and receive from the second light signal of optical line terminal transmission, after opto-electronic conversion, recover the data-signal being carried on light.Further, reduced the complexity of packaging technology.
Embodiment tetra-
The embodiment of the present invention provides a kind of optical module, as shown in Figure 4, laser 3, filter 4 and the first fiber waveguide 5, optical module also comprises: integrated detector 1 and the second fiber waveguide 2, integrated detector 1 is connected with laser 3 by the second fiber waveguide 2;
Laser 3, for generation of the first light signal, sends to described integrated detector 1 by described the first fiber waveguide 5 by described the first light signal;
Filter 4, the second light signal sending for receiving optical line terminal, sends to described integrated detector 1 by described the second light signal;
Integrated detector 1, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion; And receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light.
Further, integrated detector 1 specifically comprises: detecting unit and data recovery unit, and wherein, described detecting unit, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion; Described data recovery unit, for receiving the second light signal sending from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light.
Further, integrated detector 1 also comprises: electricity isolated layer, and for the signal of telecommunication of the signal of telecommunication of described retrieval unit and described data recovery unit is isolated.
Further, described detecting unit comprises: the first table top, the first metal electrode layer, the first sub-n utmost point layer and the first reflecting surface, wherein,
Described the first table top is on described substrate, to deposit successively after n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, etching P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the first metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the first table top, corrodes described metal level formed;
Described the first sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the first reflecting surface is to utilize wet etching method, and the first sub-n utmost point layer is formed described in etching.
Further, described detecting unit also comprises: the first light inlet inclined-plane, and described the first light inlet inclined-plane is to utilize wet etching method, and the first sub-n utmost point layer is formed described in etching, and described the first sub-n utmost point layer is injected on the first light inlet inclined-plane described in described the first optical signals.
The embodiment of the present invention provides a kind of optical module, by integrated detector is set, not only can receive the first light signal sending from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after described conversion, and can receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light, between the two ways of optical signals that simultaneously guarantees to inject, do not crosstalk, further, reduce the complexity of light module package technique, improved the reliability of optical module.
Further, as shown in Figure 5, the embodiment of the present invention also provides a kind of smooth network system 400, comprise: optical line terminal 410, optical network unit 420 and optical distribution network 430, described optical line terminal 410 is connected with described optical network unit 420 by optical distribution network 430, optical network unit 420 comprises integrated detector 440, and the structure of concrete integrated detector 440 can be with reference to the structure of the integrated detector described in Fig. 1 and embodiment mono-.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by the described protection range with claim.
Claims (6)
1. an integrated detector, is characterized in that, described integrated detector comprises: detecting unit and data recovery unit, wherein,
Described detecting unit, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion;
Described data recovery unit, for receiving the second light signal sending from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light;
Described integrated detector also comprises: electricity isolated layer and substrate, and described electricity isolated layer, for isolating the signal of telecommunication of the signal of telecommunication of described detecting unit and described data recovery unit; Described detecting unit and described data recovery unit are all integrated on described substrate, and described substrate is semi-insulating inp material;
The incident direction of the first light signal that described detecting unit receives is contrary with the incident direction of the second light signal that described data recovery unit receives, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer, or the incident direction of the first light signal of described detecting unit reception is identical with the incident direction of the second light signal of described data recovery unit reception, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer;
Described detecting unit comprises: the first table top, the first metal electrode layer, the first sub-n utmost point layer and the first reflecting surface, wherein,
Described the first table top is on described substrate, to deposit successively after n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, etching P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the first metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the first table top, corrodes described metal level formed;
Described the first sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the first reflecting surface is to utilize wet etching method, and the first sub-n utmost point layer is formed described in etching;
Described data recovery unit comprises: the second table top, the second metal electrode layer, the second sub-n utmost point layer and the second reflecting surface, wherein,
Described the second table top is on described substrate, to deposit successively after described n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, described in etching, P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the second metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the second table top, corrodes described metal level formed;
Described the second sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the second reflecting surface is to utilize wet etching method, and the second sub-n utmost point layer is formed described in etching.
2. integrated detector according to claim 1, it is characterized in that, described detecting unit also comprises: the first light inlet inclined-plane, described the first light inlet inclined-plane is to utilize wet etching method, described in etching, the first sub-n utmost point layer is formed, and described the first sub-n utmost point layer is injected on the first light inlet inclined-plane described in described the first optical signals;
Described data recovery unit also comprises: the second light inlet inclined-plane, and described the second light inlet inclined-plane is to utilize wet etching method, and the second sub-n utmost point layer is formed described in etching, and described the second sub-n utmost point layer is injected on the second light inlet inclined-plane described in described the second optical signals.
3. a detection method for integrated detector, is characterized in that, described method comprises:
Detecting unit receives the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion;
Data recovery unit receives the second light signal sending from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light;
Electricity isolated layer is isolated the signal of telecommunication of the signal of telecommunication of described detecting unit and described data recovery unit;
The incident direction of the first light signal that described detecting unit receives is contrary with the incident direction of the second light signal that described data recovery unit receives, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer, or the incident direction of the first light signal of described detecting unit reception is identical with the incident direction of the second light signal of described data recovery unit reception, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer;
Described detecting unit comprises: the first table top, the first metal electrode layer, the first sub-n utmost point layer and the first reflecting surface, wherein,
Described the first table top is on substrate, to deposit successively after n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, etching P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the first metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the first table top, corrodes described metal level formed;
Described the first sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the first reflecting surface is to utilize wet etching method, and the first sub-n utmost point layer is formed described in etching;
Described data recovery unit comprises: the second table top, the second metal electrode layer, the second sub-n utmost point layer and the second reflecting surface, wherein,
Described the second table top is on described substrate, to deposit successively after described n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, described in etching, P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the second metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the second table top, corrodes described metal level formed;
Described the second sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the second reflecting surface is to utilize wet etching method, and the second sub-n utmost point layer is formed described in etching.
4. an optical module, comprise: laser, filter and the first fiber waveguide, described laser is connected with described filter by described the first fiber waveguide, it is characterized in that, described optical module also comprises: integrated detector and the second fiber waveguide, and described integrated detector is connected with described laser by described the second fiber waveguide; Wherein,
Described laser, for generation of the first light signal, sends to described integrated detector by described the first fiber waveguide by described the first light signal;
Described filter, the second light signal sending for receiving optical line terminal, sends to described integrated detector by described the second light signal;
Described integrated detector, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion; And receive the second light signal sending from optical line terminal, after opto-electronic conversion, recover the data-signal being carried on light;
Described integrated detector specifically comprises: detecting unit and data recovery unit, wherein,
Described detecting unit, for receiving the first light signal sending from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after described conversion;
Described data recovery unit, for receiving the second light signal sending from optical line terminal, after opto-electronic conversion, recovers the data-signal being carried on light;
Described integrated detector also comprises: electricity isolated layer and substrate, and described electricity isolated layer, for isolating the signal of telecommunication of the signal of telecommunication of described retrieval unit and described data recovery unit; Described detecting unit and described data recovery unit are all integrated on described substrate, and described substrate is semi-insulating inp material;
The incident direction of the first light signal that described detecting unit receives is contrary with the incident direction of the second light signal that described data recovery unit receives, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer, or the incident direction of the first light signal of described detecting unit reception is identical with the incident direction of the second light signal of described data recovery unit reception, and the incident direction of the incident direction of described the first light signal and described the second light signal is all parallel to described electricity isolated layer;
Described detecting unit comprises: the first table top, the first metal electrode layer, the first sub-n utmost point layer and the first reflecting surface, wherein,
Described the first table top is on described substrate, to deposit successively after n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, etching P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the first metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the first table top, corrodes described metal level formed;
Described the first sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the first reflecting surface is to utilize wet etching method, and the first sub-n utmost point layer is formed described in etching;
Described data recovery unit comprises: the second table top, the second metal electrode layer, the second sub-n utmost point layer and the second reflecting surface, wherein,
Described the second table top is on described substrate, to deposit successively after described n utmost point layer, absorbed layer, P utmost point layer, utilize photoetching process, described in etching, P utmost point layer and absorbed layer are formed, and described n utmost point layer is the indium phosphide of N-type doping, described absorbed layer is InGaAsP material, and described P utmost point layer is the indium phosphide of P type doping;
Described the second metal electrode layer is after depositing metal layers, to utilize chemical corrosion method on described the second table top, corrodes described metal level formed;
Described the second sub-n utmost point layer is to utilize wet etching method, and n utmost point layer is formed described in etching;
Described the second reflecting surface is to utilize wet etching method, and the second sub-n utmost point layer is formed described in etching.
5. optical module according to claim 4, it is characterized in that, described detecting unit also comprises: the first light inlet inclined-plane, described the first light inlet inclined-plane is to utilize wet etching method, described in etching, the first sub-n utmost point layer is formed, and described the first sub-n utmost point layer is injected on the first light inlet inclined-plane described in described the first optical signals;
Described data recovery unit also comprises: the second light inlet inclined-plane, and described the second light inlet inclined-plane is to utilize wet etching method, and the second sub-n utmost point layer is formed described in etching, and described the second sub-n utmost point layer is injected on the second light inlet inclined-plane described in described the second optical signals.
6. a light network system, described optical network system comprises: optical line terminal, optical network unit and optical distribution network, described optical line terminal is connected with described optical network unit by optical distribution network, it is characterized in that, described optical network unit comprises any one integrated detector as described in claim 1-4.
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| CN101296034B (en) * | 2007-04-26 | 2012-07-11 | 华为技术有限公司 | Method and apparatus for transmission of monitoring information, passive optical network system |
| CN101442374B (en) * | 2007-11-20 | 2012-12-12 | 财团法人工业技术研究院 | TDM optical network system, device and method for preventing signal collision |
| CN101729153A (en) * | 2008-11-03 | 2010-06-09 | 华为技术有限公司 | Receiving method, device and system of optical signal |
| CN201369727Y (en) * | 2008-11-17 | 2009-12-23 | 华为技术有限公司 | Optical line terminal |
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| US5216237A (en) * | 1989-02-03 | 1993-06-01 | British Telecommunications, Plc | Optical detector with integral filter and having fabry perot resonator system |
| CN1886564A (en) * | 2003-07-15 | 2006-12-27 | 太田祐助 | Multi-wavelength, bi-directional optical multiplexer |
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