CN102723436A - Ferroelectric type memory cell, memory and preparation method thereof - Google Patents
Ferroelectric type memory cell, memory and preparation method thereof Download PDFInfo
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- CN102723436A CN102723436A CN2011100764149A CN201110076414A CN102723436A CN 102723436 A CN102723436 A CN 102723436A CN 2011100764149 A CN2011100764149 A CN 2011100764149A CN 201110076414 A CN201110076414 A CN 201110076414A CN 102723436 A CN102723436 A CN 102723436A
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Abstract
The invention discloses a ferroelectric type memory cell, a memory and a preparation method thereof, all based on an organic field effect transistor. The method of the invention introduces an organic insulation modification layer between the ferroelectric insulation medium layer and an organic semiconductor layer to improve an interface property of the ferroelectric insulation medium layer. The organic insulation modification layer has good interface compatibility with the organic semiconductor layer, and can enhance crystallinity of the organic semiconductor layer on a surface thereof, so as to raise carrier mobility of the ferroelectric type memory.
Description
Technical field
The present invention relates to microelectronic industry memory technology field, relate in particular to a kind of ferroelectric type memory cell, memory and preparation method thereof based on organic field effect tube.
Background technology
Along with deepening continuously of information technology, electronic product has got into each link of people's life and work.People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements.Therefore, the organic integration circuit engineering based on semi-conducting materials such as organic polymer, organic molecules that can realize these characteristics has obtained the many concerns of People more and more under this trend.The organic field effect tube memory is with a wide range of applications in the organic electronic field.
At present, the researcher of all parts of the world has developed the ferroelectric type memory based on organic field effect tube.In realizing process of the present invention, the applicant recognizes that there is following technical problem in prior art: organic semiconductor layer is poor in the crystallinity on ferroelectric thin film surface, causes the carrier mobility of this kind ferroelectric type memory low.
Summary of the invention
The technical problem that (one) will solve
Above-mentioned technical problem based on the prior art existence; The present invention proposes a kind of ferroelectric type memory cell based on organic field effect tube, memory and preparation method thereof; To improve the crystallinity of organic semiconductor layer, improve the carrier mobility of ferroelectric type memory on the ferroelectric thin film surface.
(2) technical scheme
According to an aspect of the present invention, a kind of ferroelectric type memory cell based on organic field effect tube is provided.This ferroelectric type memory cell comprises: conductive substrates; Be formed at the ferroelectric insulating medium layer on the conductive substrates; Being formed at being used on the ferroelectric insulating medium layer improves the crystalline organic insulation decorative layer of organic semiconductor layer; Be formed at the organic semiconductor layer on the organic insulation decorative layer; And the source electrode and the drain electrode that are formed at both sides, organic semiconductor layer top.
Preferably, in the ferroelectric type memory cell of the present invention, the material of organic insulation decorative layer is a kind of in the following material: octadecyl trichlorosilane OTS, polystyrene PS, or phenyltrimethoxysila,e PhTMS.
Preferably, in the ferroelectric type memory cell of the present invention, for the organic insulation decorative layer, its thickness is between between the 1nm to 10nm; Its preparation method adopts a kind of in the following method: self-assembly method, L-B method or spin-coating method.
Preferably, in the ferroelectric type memory cell of the present invention, for ferroelectric insulating medium layer, its thickness between 100nm between the 1 μ m; Its material is a kind of in the following material: lead zirconate titanate PZT, vinylidene-trifluoro-ethylene copolymer P (VDF/TrFE), poly aromatic acid amides MXD6; Its preparation method adopts a kind of in the following method: thermal evaporation, magnetron sputtering method, chemical vapour deposition technique or spin-coating method.
Preferably, in the ferroelectric type memory cell of the present invention, for organic semiconductor layer, its thickness is between between the 10nm to 100nm; Its material is a kind of in the following material: pentacene, phthalocyanine compound or thiophene-based material; Its preparation method adopts a kind of in the following method: vacuum thermal evaporation or spin-coating method.
Preferably, in the ferroelectric type memory cell of the present invention, conductive substrates is the electric conducting material of low-resistivity; Ferroelectric insulating medium layer is P (VDF/TrFE) layer of the 200nm of employing spin-coating method preparation; The organic insulation decorative layer is the OTS organic insulation decorative layer of the 5nm of employing spin-coating method preparation; Organic semiconductor layer is the pentacene layer of the 50nm of employing vacuum vapour deposition preparation;
Source electrode and the copper layer of drain electrode for the 50nm of employing evaporation preparation.
According to another aspect of the present invention, a kind of ferroelectric type memory based on organic field effect tube also is provided.This ferroelectric type memory comprises: read-write cell, address selection unit and several above-mentioned ferroelectric type memory cell; Wherein: address selection unit, link to each other with several ferroelectric type memory cell, be used to select the ferroelectric type memory cell of operating; Read-write cell links to each other with several ferroelectric type memory cell with address selection unit, is used for selected ferroelectric type memory cell is carried out set, resetted or programming operation.
According to a further aspect of the invention, a kind of method for preparing the ferroelectric type memory cell is provided also, has been used to prepare above-mentioned ferroelectric type memory cell.This method comprises: on conductive substrates, form ferroelectric insulating medium layer; On ferroelectric insulating medium layer, be formed for improving the crystalline organic insulation decorative layer of organic semiconductor layer; On the organic insulation decorative layer, form organic semiconductor layer; And both sides form source electrode and drain electrode above organic semiconductor layer.
(3) beneficial effect
The present invention is based in the ferroelectric type memory cell, memory and preparation method thereof of organic field effect tube, between ferroelectric insulating medium layer and organic semiconductor layer, introduced the organic insulation decorative layer that one deck is used to improve ferroelectric insulating medium layer interfacial property.Interface compatibility between this organic insulation decorative layer and the organic semiconductor layer is good, can improve organic semiconductor layer in its surperficial crystallinity, thereby improves the carrier mobility of ferroelectric type memory.
Description of drawings
Fig. 1 is the structural representation of embodiment of the invention ferroelectric type memory cell;
Fig. 2 prepares the flow chart of ferroelectric type memory cell method for the embodiment of the invention;
Fig. 3-1 is the structural representation of optical storage unit after flow chart step S10 shown in Figure 2 accomplishes;
Fig. 3-2 is the structural representation of optical storage unit after flow chart step S20 shown in Figure 2 accomplishes;
Fig. 3-3 is the structural representation of optical storage unit after flow chart step S30 shown in Figure 2 accomplishes;
Fig. 3-4 is the structural representation of optical storage unit after flow chart step S40 shown in Figure 2 accomplishes.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
In the embodiment on a basis of the present invention, a kind of ferroelectric type memory cell based on organic field effect tube is disclosed.This ferroelectric type memory cell comprises: conductive substrates; Be formed at the ferroelectric insulating medium layer on the conductive substrates; Being formed at being used on the ferroelectric insulating medium layer improves the crystalline organic insulation decorative layer of organic semiconductor layer; Be formed at the organic semiconductor layer on the organic insulation decorative layer; And the source electrode and the drain electrode that are formed at both sides, organic semiconductor layer top.
In present embodiment ferroelectric type memory cell, between ferroelectric insulating medium layer and organic semiconductor layer, introduced the organic insulation decorative layer that one deck is used for improving organic field effect tube interfacial dielectric layer character.Interface compatibility between this organic insulation decorative layer and the organic semiconductor layer is good, thereby has improved organic semiconductor layer in its surperficial crystallinity, and the carrier mobility of ferroelectric type memory cell also improves thereupon.
In the further embodiment of the present invention; The material of organic insulation decorative layer is octadecyl trichlorosilane OTS; Polystyrene PS; Or phenyltrimethoxysila,e PhTMS, its thickness is between between the 1nm to 10nm, and its preparation method adopts a kind of in the following method: self-assembly method, L-B method or spin-coating method.
In present embodiment ferroelectric type memory cell, provided the concrete material and the generation method of this organic insulation decorative layer.Especially the thickness (between the 1nm to 10nm) that it should be noted that this organic insulation decorative layer is compared and can be ignored with the thickness (being generally more than the 100nm) of ferroelectric insulating barrier, thereby less to the ferroelectric effect influence of ferroelectric insulating barrier.Therefore, the ferroelectric type memory cell of present embodiment can not influence its ferroelectric properties when improving carrier mobility.
In the middle of the preferred embodiment of the invention, for ferroelectric insulating medium layer, its thickness between 100nm between the 1 μ m; Its material is a kind of in the following material: lead zirconate titanate PZT, vinylidene-trifluoro-ethylene copolymer P (VDF/TrFE), poly aromatic acid amides MXD6; Its preparation method adopts a kind of in the following method: thermal evaporation, magnetron sputtering method, chemical vapour deposition technique or spin-coating method.For organic semiconductor layer, its thickness is between between the 10nm to 100nm, and its material is a kind of in the following material: pentacene, phthalocyanine compound or thiophene-based material; Its preparation method adopts a kind of in the following method: vacuum thermal evaporation method or spin-coating method.
According to another aspect of the present invention, a kind of ferroelectric type memory based on organic field effect tube also is provided.This ferroelectric type memory comprises: read-write cell, address selection unit and some above-mentioned ferroelectric type memory cell; Wherein: address selection unit, link to each other with these some ferroelectric type memory cell, be used to select the ferroelectric type memory cell of operating; Read-write cell links to each other with some ferroelectric type memory cell with address selection unit, is used for selected ferroelectric type memory cell is carried out set, resetted or programming operation.
In addition, according to a further aspect of the invention, a kind of method for preparing the ferroelectric type memory cell is provided also, has been used to prepare above-mentioned memory cell.This method comprises: on conductive substrates, form ferroelectric insulating medium layer; On ferroelectric insulating medium layer, be formed for improving the crystalline organic insulation decorative layer of organic semiconductor layer; On the organic insulation decorative layer, form organic semiconductor layer; And both sides form source electrode and drain electrode above organic semiconductor layer.
This ferroelectric type memory has with the identical beneficial effect of above-mentioned ferroelectric type memory cell with the method for preparing the ferroelectric type memory cell, repeats no more here.Below will be at the foregoing description technical, provide optimum embodiment of the present invention.Need explain that this optimum embodiment only is used to understand the present invention, is not limited to protection scope of the present invention.And the characteristic among the optimum embodiment not having under the situation about indicating especially, all is applicable to memory cell, memory and preparation method simultaneously, and the technical characterictic that in identical or different embodiment, occurs can make up use under not conflicting situation.
Fig. 1 is the structural representation of embodiment of the invention ferroelectric type memory cell.As shown in Figure 1, present embodiment ferroelectric type memory cell comprises: conductive substrates 101; Insulating medium layer 102 with ferroelectric property; Organic insulation decorative layer 103; Organic semiconductor layer 104; Source electrode 105 and drain 106.Wherein: conductive substrates 101 adopts the gate electrode of the electric conducting material of low-resistivity as organic field-effect tube.Insulating medium layer 102 with ferroelectric property comes deposition growing to have the inorganic and organic insulating material such as the PZT of ferroelectric property, P (VDF/TrFE), films such as MXD6 for adopting evaporation, magnetron sputtering method, chemical vapour deposition technique or spin-coating method.Organic insulation decorative layer 103 is for adopting self-assembly method, the film that improves interfacial dielectric layer character in the organic field effect tube that L-B method or spin-coating method deposition growing are commonly used, OTS for example, PS, organic films such as PhTMS.Organic semiconductor layer 104 is the pentacene of the method deposition growing of the method that adopts vacuum thermal evaporation or spin-coating film, phthalocyanine compound, a series of organic semiconductor layers such as thiophene-based material.Source electrode 105, drain electrode 106 are for adopting evaporation technique, the metal electrode or the organic conductor electrode of magnetron sputtering technique or inkjet technology preparation.
Fig. 2 prepares the flow chart of ferroelectric type memory cell method for the embodiment of the invention.This method can be used to make ferroelectric type memory cell shown in Figure 1.Fig. 3 is the structural representation of the corresponding ferroelectric type memory cell of each step in the flow chart shown in Figure 2.With reference to Fig. 2 and Fig. 3, this method may further comprise the steps:
Step 10, P (VDF/TrFE) layer of adopting spin-coating method growth 200nm on the conductive substrates surface, wherein, conductive substrates adopts the gate electrode of the electric conducting material of low-resistivity as organic field-effect tube, shown in Fig. 3-1;
Step 20 is at the OTS organic insulation decorative layer of P (VDF/TrFE) laminar surface employing spin-coating method deposition growing 5nm, shown in Fig. 3-2;
Step 30 is at the pentacene layer of OTS surface employing vacuum vapour deposition growth 50nm, shown in Fig. 3-3;
Step 40, the copper that adopts evaporation deposition growing 50nm at the pentacene laminar surface is as source electrode and drain electrode, shown in Fig. 3-4.
Through said method, prepare ferroelectric type memory cell based on organic field effect tube.Adopt and use the same method, the applicant has also prepared following memory cell:
In the second kind ferroelectric type memory cell prepared according to the present invention, the thickness of its P (VDF/TrFE) layer is 100nm, and the thickness of its OTS layer is 1nm; The thickness of its pentacene layer is 10nm; The source electrode of its copper product and the thickness of drain electrode are 20nm.In the third ferroelectric type memory cell prepared according to the present invention, the thickness of its P (VDF/TrFE) layer is 1 μ m, and the thickness of its OTS layer is 10nm; The thickness of its pentacene layer is 100nm; The source electrode of its copper product and the thickness of drain electrode are 50nm.Test shows, the performance of these three kinds of ferroelectric type memory cell has reached designing requirement fully, compares with prior art ferroelectric type memory, all can realize improving the technique effect of carrier mobility.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the ferroelectric type memory cell based on organic field effect tube is characterized in that, this ferroelectric type memory cell comprises:
Conductive substrates;
Be formed at the ferroelectric insulating medium layer on the said conductive substrates;
Being formed at being used on the said ferroelectric insulating medium layer improves the crystalline organic insulation decorative layer of said organic semiconductor layer;
Be formed at the organic semiconductor layer on the said organic insulation decorative layer; And
Be formed at the source electrode and the drain electrode of both sides, said organic semiconductor layer top.
2. ferroelectric type memory cell according to claim 1 is characterized in that, the material of said organic insulation decorative layer is a kind of in the following material:
Octadecyl trichlorosilane OTS, polystyrene PS, or phenyltrimethoxysila,e PhTMS.
3. ferroelectric type memory cell according to claim 2 is characterized in that, for said organic insulation decorative layer,
Its thickness is between between the 1nm to 10nm;
Its preparation method adopts a kind of in the following method: self-assembly method, L-B method or spin-coating method.
4. ferroelectric type memory cell according to claim 3 is characterized in that, for said ferroelectric insulating medium layer,
Its thickness between 100nm between the 1 μ m;
Its material is a kind of in the following material: lead zirconate titanate PZT, vinylidene-trifluoro-ethylene copolymer P (VDF/TrFE), poly aromatic acid amides MXD6;
Its preparation method adopts a kind of in the following method: thermal evaporation, magnetron sputtering method, chemical vapour deposition technique or spin-coating method.
5. ferroelectric type memory cell according to claim 4 is characterized in that, for said organic semiconductor layer,
Its thickness is between between the 10nm to 100nm;
Its material is a kind of in the following material: pentacene, phthalocyanine compound or thiophene-based material;
Its preparation method adopts a kind of in the following method: vacuum thermal evaporation or spin-coating method.
6. ferroelectric type memory cell according to claim 5 is characterized in that,
Said conductive substrates is the electric conducting material of low-resistivity;
Said ferroelectric insulating medium layer is P (VDF/TrFE) layer of the 200nm of employing spin-coating method preparation;
Said organic insulation decorative layer is the OTS organic insulation decorative layer of the 5nm of employing spin-coating method preparation;
Said organic semiconductor layer is the pentacene layer of the 50nm of employing vacuum vapour deposition preparation;
Said source electrode and the copper layer of drain electrode for the 50nm of employing evaporation preparation.
7. the ferroelectric type memory based on organic field effect tube is characterized in that, this ferroelectric type memory comprises: each described ferroelectric type memory cell among read-write cell, address selection unit and several claims 1-6; Wherein:
Said address selection unit links to each other with said several ferroelectric type memory cell, is used to select the ferroelectric type memory cell of operating;
Said read-write cell links to each other with said several ferroelectric type memory cell with said address selection unit, is used for selected ferroelectric type memory cell is carried out set, resetted or programming operation.
8. a method for preparing the ferroelectric type memory cell is used for preparation like each said ferroelectric type memory cell of claim 1 to 6, it is characterized in that this method comprises:
On conductive substrates, form ferroelectric insulating medium layer;
On said ferroelectric insulating medium layer, be formed for improving the crystalline organic insulation decorative layer of said organic semiconductor layer;
On said organic insulation decorative layer, form organic semiconductor layer; And
Both sides form source electrode and drain electrode above said organic semiconductor layer.
9. the method for preparing the ferroelectric type memory cell according to claim 8 is characterized in that,
In the said step that on conductive substrates, forms ferroelectric insulating medium layer, for said ferroelectric insulating medium layer: its material is a lead zirconate titanate PZT, vinylidene-trifluoro-ethylene copolymer P (VDF/TrFE) or poly aromatic acid amides MXD6; Its deposition process is evaporation, magnetron sputtering method, chemical vapour deposition technique or spin-coating method, its thickness between 100nm between the 1 μ m;
Said on ferroelectric insulating medium layer, being formed for improved in the step of the crystalline organic insulation decorative layer of organic semiconductor layer, and for said organic insulation decorative layer: its thickness is between between the 1nm to 10nm; Its material is a kind of in the following material: octadecyl trichlorosilane OTS, polystyrene PS, or phenyltrimethoxysila,e PhTMS; Its preparation method adopts a kind of in the following method: self-assembly method, L-B method or spin-coating method;
In the said step that on the organic insulation decorative layer, forms organic semiconductor layer, for said organic semiconductor layer: its material is OTS, PS or PhTMS; Its deposition process is self-assembly method, L B film method or spin-coating method, and its thickness is smaller or equal to 10nm;
Said above organic semiconductor layer both sides form in the step of source electrode and drain electrode, for said source electrode and drain electrode: its material is metal or organic conductor; Its deposition process is an evaporation, magnetron sputtering method or ink-jet printing process; Its thickness is less than 100nm.
10. the method for preparing the ferroelectric type memory cell according to claim 9 is characterized in that,
Said step at the ferroelectric insulating medium layer of formation on the conductive substrates comprises: P (VDF/TrFE) film that on conductive substrates, adopts spin-coating method growth 200nm;
Saidly comprise: the OTS organic insulation decorative layer that on said P (VDF/TrFE) film, adopts spin-coating method deposition 5nm in the step that is formed for improving the crystalline organic insulation decorative layer of said organic semiconductor layer on the ferroelectric insulating medium layer;
The said step that on the organic insulation decorative layer, forms organic semiconductor layer comprises: the pentacene layer that on OTS, adopts vacuum vapour deposition growth 50nm;
The said step that forms source electrode and drain electrode in both sides above the organic semiconductor layer comprises: the copper that on the pentacene layer, adopts evaporation deposition 50nm is as source electrode and drain electrode.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746076A (en) * | 2014-01-26 | 2014-04-23 | 江苏巨邦环境工程集团股份有限公司 | Ferroelectric storage |
| CN103762217A (en) * | 2014-01-26 | 2014-04-30 | 江苏巨邦环境工程集团股份有限公司 | Manufacturing method of ferroelectric memory |
| CN103943777A (en) * | 2014-03-18 | 2014-07-23 | 复旦大学 | Method for manufacturing organic semiconductor/ferroelectric composite resistance-variable film through temperature-controllable spin coating |
| CN105977258A (en) * | 2016-05-11 | 2016-09-28 | 南京大学 | Preparation method of high-performance nonvolatile ferroelectric transistor memory |
| CN106775048A (en) * | 2015-11-20 | 2017-05-31 | 三星显示有限公司 | Touch-sensing unit |
| CN110098256A (en) * | 2019-04-24 | 2019-08-06 | 中国科学院微电子研究所 | Field effect transistor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1343008A (en) * | 2000-09-05 | 2002-04-03 | 松下电器产业株式会社 | Drive method for semiconductor memory |
| US20040002176A1 (en) * | 2002-06-28 | 2004-01-01 | Xerox Corporation | Organic ferroelectric memory cells |
| GB2406437A (en) * | 2003-08-07 | 2005-03-30 | Univ Sheffield | Field effect transistor with organic ferroelectric gate insulator |
| CN101339975A (en) * | 2008-08-12 | 2009-01-07 | 中国科学院化学研究所 | Organic field-effect transistors having high mobility and preparation thereof |
| JP2010062221A (en) * | 2008-09-01 | 2010-03-18 | Sharp Corp | Ferroelectric gate field effect transistor, memory element using the same, and method of manufacturing the ferroelectric gate field effect transistor |
-
2011
- 2011-03-29 CN CN2011100764149A patent/CN102723436A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1343008A (en) * | 2000-09-05 | 2002-04-03 | 松下电器产业株式会社 | Drive method for semiconductor memory |
| US20040002176A1 (en) * | 2002-06-28 | 2004-01-01 | Xerox Corporation | Organic ferroelectric memory cells |
| GB2406437A (en) * | 2003-08-07 | 2005-03-30 | Univ Sheffield | Field effect transistor with organic ferroelectric gate insulator |
| CN101339975A (en) * | 2008-08-12 | 2009-01-07 | 中国科学院化学研究所 | Organic field-effect transistors having high mobility and preparation thereof |
| JP2010062221A (en) * | 2008-09-01 | 2010-03-18 | Sharp Corp | Ferroelectric gate field effect transistor, memory element using the same, and method of manufacturing the ferroelectric gate field effect transistor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746076A (en) * | 2014-01-26 | 2014-04-23 | 江苏巨邦环境工程集团股份有限公司 | Ferroelectric storage |
| CN103762217A (en) * | 2014-01-26 | 2014-04-30 | 江苏巨邦环境工程集团股份有限公司 | Manufacturing method of ferroelectric memory |
| CN103762217B (en) * | 2014-01-26 | 2016-05-04 | 江苏巨邦环境工程集团股份有限公司 | A kind of manufacture method of ferroelectric memory |
| CN103746076B (en) * | 2014-01-26 | 2016-05-04 | 江苏巨邦环境工程集团股份有限公司 | A kind of ferroelectric memory |
| CN103943777A (en) * | 2014-03-18 | 2014-07-23 | 复旦大学 | Method for manufacturing organic semiconductor/ferroelectric composite resistance-variable film through temperature-controllable spin coating |
| CN106775048A (en) * | 2015-11-20 | 2017-05-31 | 三星显示有限公司 | Touch-sensing unit |
| CN105977258A (en) * | 2016-05-11 | 2016-09-28 | 南京大学 | Preparation method of high-performance nonvolatile ferroelectric transistor memory |
| CN105977258B (en) * | 2016-05-11 | 2019-06-04 | 南京大学 | A kind of high performance non-volatile ferroelectric transistor memory preparation |
| CN110098256A (en) * | 2019-04-24 | 2019-08-06 | 中国科学院微电子研究所 | Field effect transistor and preparation method thereof |
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Application publication date: 20121010 |