CN102707247A - Self-biased giant magneto-impedance sensor probe and preparation method thereof - Google Patents
Self-biased giant magneto-impedance sensor probe and preparation method thereof Download PDFInfo
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Abstract
A self-biased giant magneto-impedance sensor probe and a preparation method thereof belong to the technical field of information functional devices. The probe comprises an amorphous strap-shaped magnetic material and metal counter electrodes positioned at two ends of the surface of the amorphous strap-shaped magnetic material, wherein two vectolite films are respectively deposited on two sides of the amorphous strap-shaped magnetic material between the metal counter electrodes; and the upper and the lower vectolite films have consistent hard magnetic phase characteristic in the length direction of the amorphous strap-shaped magnetic material. During preparation of the probe, the key process is that the vectolite films are deposited on the amorphous strap-shaped magnetic material through the radio-frequency magnetron sputtering technology and are magnetized through a magnetizer to present hard magnetic phase. The self-biased giant magneto-impedance sensor probe provided by the invention has the characteristics of small size, easiness in integration and no extra power consumption; the product is simple to prepare, the process is controllable and the stability is high; and a wider linear working space can be obtained and the sensitivity is greatly improved.
Description
Technical field
The invention belongs to informational function device technology field, relate to a kind of automatic biasing giant magnetic impedance sensor probe and preparation method thereof.
Background technology
Since nineteen ninety-four, the research of giant magnetoresistance effect is because it has great application prospect at Magnetic Sensor and area information storage, and various countries scientific worker's extensive concern extremely.Early stage research mainly concentrates on magnetic field and the frequency characteristic of studying various components and the impedance of material shape (silk, band and film) under different technological conditions from theoretical and two aspects of experiment.The research of this respect has obtained important progress.In order to make giant magnetoresistance effect can better be applied to reality, present research emphasis is impedance rate of change and the sensitivity that how to improve the giant magnetic impedance sensor.
Though compare with thread or strip material; Membraneous material is realized the microminiaturization of giant magnetic impedance sensor more easily through photoetching etc. and integrated circuit processing technique; But because giant magnetoresistance effect is observed in thread or banded magnetic material more easily significantly, so present commercial giant magnetic impedance sensor all is to be processed by thread or strip material.But reason owing to the magnetic material self-characteristic; The giant magnetoresistance effect that makes conventional magnetic material under the situation that does not add any disposal, embodied has nonlinear characteristic; And the magnetoimpedance variation presents symmetry near null field; Make that the giant magnetic impedance sensor of processing is insensitive to the variation in magnetic field at the null field annex, sensitivity is low.
In order to improve this latent defect, asymmetric giant magnetoresistance effect can increase substantially the linearity and the high sensitivity of sensor near academia and the industry member employing null field.1), the bias coil method asymmetric giant magnetoresistance effect thread or strip material can adopt following method to realize:: through on sensor, preparing coil; In coil, pass to electric current and produce bias magnetic field; If two giant magnetic impedance probes of setovering are in opposite direction linked to each other with difference form, can realize that then near the linearity the null field is exported; But the method that adopts additional coils to produce bias-field not only will increase the preparation difficulty and the expense of sensor unit, and what is more important is to power up the power consumption that the stream bias-field can enlarge markedly probe, and this is that sensor does not hope to see when using.2), the permanent magnet bias method: with mode 1) similar, adopt permanent magnet to replace bias coil, though this does not increase the power consumption of sensor, but can increase the volume of sensor, be unfavorable for the miniaturization of sensor.3), annealing method: the amorphous strip material is handled with the annealing temperature that is not higher than crystallization temperature under magnetic field, then can be formed the surface crystallization layer, this surface crystallization layer (Hard Magnetic) will produce exchange-coupling interaction with the amorphous layer (soft magnetism) of inside and produce automatic biasing magnetic field; Thereby make giant magnetoresistance effect be asymmetry [C.G.Kim, K.J.Jang, H.C.Kim; Et al.; J.Appl.Phys.85,1999,5447]].Because this asymmetric property is owing to exchange-coupling interaction forms; So power consumption is with respect to method 1) greatly reduce; Volume is with respect to method 2) also greatly reduce, but because this Hard Magnetic/soft magnetism exchange coupling field is formed by annealing, amorphous magnetic material is exposed in the air oxidized easily; Can make preparation sensor probe job stability in time passing and reduce; The hard magnetic layer thickness limited (about 100 nanometers) that this annealing way of what is more important produces makes that Hard Magnetic/soft magnetism exchange coupling field is little, its null field linear work district less (less than ± 2Oe), sensitivity is not enough.
Summary of the invention
The present invention provides a kind of automatic biasing giant magnetic impedance sensor probe and preparation method thereof; Said automatic biasing giant magnetic impedance sensor probe produces the principle in automatic biasing magnetic field based on Hard Magnetic/soft magnetism exchange coupling; Can obtain the more linear work district of wide region; And significantly improve sensitivity, and have that volume is little, easy of integration, the characteristics of no extra power consumption; Its preparation method is simple, help suitability for industrialized production.
Technical scheme of the present invention is:
A kind of automatic biasing giant magnetic impedance sensor probe; Like Fig. 1, shown in 2; Comprise banded magnetic material 2 of amorphous and the metal pair electrode 3 that is positioned at the banded magnetic material of amorphous 2 surperficial two ends, the banded magnetic material of the amorphous between the said metal pair electrode 32 two sides deposit one deck vectolite film 1 respectively; Two-layer up and down vectolite film 1 has along the consistent Hard Magnetic phase behaviour of banded magnetic material 2 length directions of amorphous.
A kind of preparation method of automatic biasing giant magnetic impedance sensor probe may further comprise the steps:
Step 1: prepare the banded magnetic material of amorphous.Amorphous magnetic thin-band material is cut into the unit material of identical size, is designated as the banded magnetic material 2 of amorphous, then the banded magnetic material 2 of amorphous is made clean.Concrete clean process can be: at first clean the banded magnetic material 2 of amorphous with conventional weak acid, weak caustic solution, dry up for use with rinsed with deionized water, dried nitrogen then.
Step 2: deposit cobalt ferrite film.Adopt the rf magnetron sputtering thin film preparation process, the banded magnetic material 2 two sides deposit cobalt ferrite films 1 of the amorphous after clean.
Step 3: photoetching.Adopt photoetching process, etch away two end portions vectolite film 1, reserve the deposition position of metal pair electrode 3 on the banded magnetic material of amorphous 2 surfaces.
Step 4: magnetize.Utilize magnet charger to processings of magnetizing of the vectolite film 1 of the banded magnetic material of amorphous 2 two sides deposition, make that two-layer vectolite film 1 demonstrates along the Hard Magnetic phase behaviour of the banded magnetic material 2 length directions unanimity of amorphous up and down.
Step 5: metal electrode preparation.The deposition position deposit metallic material of the metal pair electrode of reserving on the banded magnetic material of amorphous 2 surfaces 3 is as metal pair electrode 3.The metal pair electrode can also can prepare on the banded magnetic material of amorphous 2 two sides in the banded magnetic material 2 single faces preparation of amorphous.
Through above step, can obtain automatic biasing giant magnetic impedance sensor probe according to the invention.
The present invention is coated with vectolite film (hard magnetic material) through magnetically controlled sputter method on the banded magnetic material of amorphous; Then to the ferrite film processing of magnetizing; Make the vectolite film demonstrate along the consistent Hard Magnetic phase behaviour of the banded magnetic material length direction of amorphous; Vectolite film (Hard Magnetic phase) forms the coupling of exchange elasticity with the banded magnetic material of amorphous (soft magnetism mutually) like this; Soft magnetism is carried out automatic biasing mutually, make the banded giant magneto-resistance sensor probe of amorphous demonstrate asymmetric giant magnetoresistance effect.This makes automatic biasing giant magnetic impedance sensor probe provided by the invention have that volume is little, easy of integration, the characteristics of no extra power consumption.
In addition; Because preparing vectolite film hard magnetic material, the rf magnetron sputtering thin film preparation process Hard Magneticization carry out in the banded magnetic material of amorphous surface than existing annealing process; The rf magnetron sputtering thin film preparation process is controlled more easily, and the homogeneity of product that obtains is better, and rf magnetron sputtering prepares the vectolite film and can obtain layer of oxide layer on the surface; Thereby the internal layer amorphous magnetic material is played a protective role, the job stability of giant magnetic impedance sensor probe is improved.
Have again; Can change the size of self-bias field through the thickness that changes the vectolite film in the present invention; Adopt giant magnetic impedance sensor probe according to the invention can adapt to the size that different demands is adjusted bias-field thereby make; To obtain more the linear work district of the sensor probe of wide region and higher sensitivity; And the amorphous magnetic material that in a single day the giant magnetic impedance sensor probe that adopts annealing in process is selected for use is confirmed, its bias-field just immobilizes, and can not adapt to the diversity demand in the actual use.
Description of drawings
Fig. 1 is an automatic biasing giant magnetic impedance sensor probe planar structure synoptic diagram provided by the invention.
Fig. 2 is the cross-sectional view of automatic biasing giant magnetic impedance sensor probe provided by the invention.
Fig. 3 is preparation technology's schematic flow sheet of automatic biasing giant magnetic impedance sensor probe provided by the invention.
Reference numeral: 1 is the vectolite film, and 2 is amorphous magnetic strip material, and 3 is the metal pair electrode.
Embodiment
Embodiment one
Adopt following process to prepare automatic biasing giant magnetic impedance sensor probe:
(1). selecting trade names for use is the Co of Metglass
82.17Fe
4.45Ni
1.63Si
8.6B
3.15Amorphous magnetic strip, its thickness are 30 microns, width 2mm, subsequent use (being designated as: the banded magnetic material 2 of amorphous) of amorphous thin ribbon of reducing a segment length 30mm from strip.
(2). the banded magnetic material 2 of amorphous is carried out following clean: with alkaline solution (ammoniacal liquor: oxydol: deionized water=1:2:5) cleaned ultrasonic 15 minutes; With deionized water ultrasonic 5 minutes; With acid solution (hydrochloric acid: the ultrasonic cleaning of deionized water=1:8) 15 minutes; With deionized water ultrasonic 5 minutes, dry up with dried nitrogen.
(3). adopt the rf magnetron sputtering thin film preparation process, the banded magnetic material 2 two sides deposit cobalt ferrite films 1 of the amorphous after clean.Target adopts CoFe
2O
4, concrete rf magnetron sputtering technology is: back of the body end vacuum 2 * 10
-6Mbar, argon gas operating air pressure 1 * 10
-3Mbar, oxygen operating air pressure 2 * 10
-4Mbar, sputtering power 100W; Vectolite film 1 thickness is 2 microns.
(4). adopt photoetching process, etch away two end portions vectolite film 1, reserve the deposition position of metal pair electrode 3 on the banded magnetic material of amorphous 2 surfaces.
(5). utilize magnet charger to processings of magnetizing of the vectolite film 1 of the banded magnetic material of amorphous 2 two sides deposition, make that two-layer vectolite film 1 demonstrates along the Hard Magnetic phase behaviour of the banded magnetic material 2 length directions unanimity of amorphous up and down.Specifically magnetizing and using magnetic field intensity is 5000 Gausses, magnetizes 10 minutes time.
(6). the deposition position deposit metallic material of the metal pair electrode of reserving on the banded magnetic material of amorphous 2 surfaces 3 is accomplished the preparation of automatic biasing giant magnetic impedance sensor probe as metal pair electrode 3.
Through the automatic biasing giant magnetic impedance sensor probe of method for preparing, through its linear work district of test be-5～+ 5Oe, sensitivity is 476%/Oe.And only through 300 degrees centigrade, 5000 gauss magnetic fields down the performance of the automatic biasing giant magnetic impedance sensor probe of the same size of annealing be: linear work district-1.5～+ 1.5Oe, sensitivity is 135%/Oe.This shows, adopt preparation method of the present invention than annealing method, make the linear work district scope of amorphous thin ribbon improve 3 times, sensitivity improves nearly more than 2 times.
Embodiment two
Similar with embodiment one, just change amorphous magnetic thin-band material into (Co
94Fe
6) 7Si
10B
15Amorphous magnetic strip (thickness is 25 microns, 2 millimeters of width, 15 millimeters of length), 1 micron of vectolite thickness.Be-3.6 through its linear work district of test～+ 3.6Oe, sensitivity is 325%/Oe.And only through 300 degrees centigrade, 5000 gauss magnetic fields down the performance of the amorphous thin ribbon giant magnetic impedance sensor probe of the same size of annealing be: linear work district-1.5～+ 1.5Oe, sensitivity is 115%/Oe.This shows, adopt preparation method of the present invention than annealing method, make the linear work district of amorphous thin ribbon improve 1 times, sensitivity improves nearly 3 times.
Need to prove: the present invention prepares in the automatic biasing giant magnetic impedance sensor probe process, and 1, the controllable thickness of vectolite film 1 is built between 200 nanometers to 2 micron; 2, the target of preparation vectolite film is not limited to CoFe
2O
4, the atomic ratio in the target between Co, Fe, the O can be regulated according to prior art; 3, concrete rf magnetron sputtering technology can be in following range: back of the body end vacuum<5 * 10
-6Mbar, argon gas operating air pressure 9 * 10
-4～9 * 10
-3Mbar, oxygen argon be than 0.1～0.25, radio-frequency sputtering power 50-200W; The magnetic field intensity and the time of magnetizing also need not to be defined in the said scope of above-mentioned embodiment when 4, magnetizing processing, can make that two-layer vectolite film 1 demonstrates along the consistent Hard Magnetic phase behaviour of banded magnetic material 2 length directions of amorphous up and down as long as magnetize to handle.
Claims (7)
1. automatic biasing giant magnetic impedance sensor probe comprises banded magnetic material (2) of amorphous and the metal pair electrode (3) that is positioned at the surperficial two ends of amorphous band shape magnetic material (2); It is characterized in that the banded magnetic material (2) of the amorphous between the said metal pair electrode (3) two sides deposits one deck vectolite film (1) respectively; Two-layer up and down vectolite film (1) has along the consistent Hard Magnetic phase behaviour of banded magnetic material (2) length direction of amorphous.
2. automatic biasing giant magnetic impedance sensor probe according to claim 1 is characterized in that, said vectolite film (1) thickness is between 200 nanometers to 2 micron.
3. the preparation method of an automatic biasing giant magnetic impedance sensor probe may further comprise the steps:
Step 1: prepare the banded magnetic material of amorphous; Amorphous magnetic thin-band material is cut into the unit material of identical size, is designated as the banded magnetic material (2) of amorphous, then the banded magnetic material of amorphous (2) is made clean;
Step 2: deposit cobalt ferrite film; Adopt the rf magnetron sputtering thin film preparation process, banded magnetic material (2) the two sides deposit cobalt ferrite film (1) of the amorphous after clean;
Step 3: photoetching; Adopt photoetching process, etch away two end portions vectolite film (1), reserve the deposition position of metal pair electrode (3) on the banded magnetic material (2) of amorphous surface;
Step 4: magnetize; Utilize magnet charger to processings of magnetizing of the vectolite film (1) of the banded magnetic material (2) of amorphous two sides deposition, make that two-layer vectolite film (1) demonstrates along the Hard Magnetic phase behaviour of banded magnetic material (2) the length direction unanimity of amorphous up and down;
Step 5: metal electrode preparation; The deposition position deposit metallic material of the metal pair electrode of reserving on the banded magnetic material (2) of amorphous surface (3) is as metal pair electrode (3).
4. the preparation method of automatic biasing giant magnetic impedance sensor probe according to claim 3; It is characterized in that; Clean described in the step 1 is at first cleaned the banded magnetic material (2) of amorphous with conventional weak acid, weak caustic solution, dries up for use with rinsed with deionized water, dried nitrogen then.
5. the preparation method of automatic biasing giant magnetic impedance sensor probe according to claim 3 is characterized in that, the THICKNESS CONTROL of said vectolite film (1) is between 200 nanometers to 2 micron.
6. the preparation method of automatic biasing giant magnetic impedance sensor probe according to claim 3 is characterized in that, the target during step 2 deposit cobalt ferrite film is CoFe
2O
4Concrete rf magnetron sputtering technology is: back of the body end vacuum<5 * 10
-6Mbar, argon gas operating air pressure 9 * 10
-4～9 * 10
-3Mbar, oxygen argon be than 0.1～0.25, radio-frequency sputtering power 50-200W.
7. the preparation method of automatic biasing giant magnetic impedance sensor probe according to claim 3; It is characterized in that; During step 5 preparation metal pair electrode, the metal pair electrode can also can prepare on the banded magnetic material (2) of amorphous two sides in banded magnetic material (2) the single face preparation of amorphous.
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| CN103018688A (en) * | 2012-12-06 | 2013-04-03 | 电子科技大学 | Giant magneto impedance (GMI) and giant magneto resistance (GMR) combined magneto-dependent sensor |
| CN105044433A (en) * | 2015-07-03 | 2015-11-11 | 东莞电子科技大学电子信息工程研究院 | Anti-interference adjustable giant magnetoresistance effect current sensor |
| CN110673068A (en) * | 2019-09-04 | 2020-01-10 | 南京理工大学 | Resonant magnetic sensor with microminiature bias magnetic circuit structure |
| CN110988756A (en) * | 2019-11-18 | 2020-04-10 | 南京理工大学 | Differential resonant magnetic sensor adopting double-magnetostrictive-unit magnetic circuit structure |
| CN113981334A (en) * | 2021-11-02 | 2022-01-28 | 浙江大学 | Amorphous wire planar structure with ultrahigh magnetic impedance and sensing application thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018688A (en) * | 2012-12-06 | 2013-04-03 | 电子科技大学 | Giant magneto impedance (GMI) and giant magneto resistance (GMR) combined magneto-dependent sensor |
| CN105044433A (en) * | 2015-07-03 | 2015-11-11 | 东莞电子科技大学电子信息工程研究院 | Anti-interference adjustable giant magnetoresistance effect current sensor |
| CN105044433B (en) * | 2015-07-03 | 2018-02-16 | 东莞电子科技大学电子信息工程研究院 | A kind of anti-interference adjustable giant magnetoresistance effect current sensor |
| CN110673068A (en) * | 2019-09-04 | 2020-01-10 | 南京理工大学 | Resonant magnetic sensor with microminiature bias magnetic circuit structure |
| CN110988756A (en) * | 2019-11-18 | 2020-04-10 | 南京理工大学 | Differential resonant magnetic sensor adopting double-magnetostrictive-unit magnetic circuit structure |
| CN113981334A (en) * | 2021-11-02 | 2022-01-28 | 浙江大学 | Amorphous wire planar structure with ultrahigh magnetic impedance and sensing application thereof |
| CN113981334B (en) * | 2021-11-02 | 2022-04-26 | 浙江大学 | Amorphous wire planar structure with ultrahigh magnetic impedance and sensing application thereof |
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