CN102703980B - 生长具有一定曲率的半球状蓝宝石晶体的方法 - Google Patents
生长具有一定曲率的半球状蓝宝石晶体的方法 Download PDFInfo
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- CN102703980B CN102703980B CN201210179450.2A CN201210179450A CN102703980B CN 102703980 B CN102703980 B CN 102703980B CN 201210179450 A CN201210179450 A CN 201210179450A CN 102703980 B CN102703980 B CN 102703980B
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- crystal
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- hemispherical
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 25
- 239000010980 sapphire Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000033001 locomotion Effects 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 101700004678 SLIT3 Proteins 0.000 description 2
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201210179450.2A CN102703980B (zh) | 2012-06-01 | 2012-06-01 | 生长具有一定曲率的半球状蓝宝石晶体的方法 |
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CN201210179450.2A CN102703980B (zh) | 2012-06-01 | 2012-06-01 | 生长具有一定曲率的半球状蓝宝石晶体的方法 |
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CN102703980A CN102703980A (zh) | 2012-10-03 |
CN102703980B true CN102703980B (zh) | 2015-08-19 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2743354C1 (ru) * | 2020-08-31 | 2021-02-17 | Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) | Способ получения торцевых поверхностей с кривизной на монокристаллах сапфира |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104141168A (zh) * | 2014-07-31 | 2014-11-12 | 中国电子科技集团公司第二十六研究所 | 一种直接生长蓝宝石整流罩的方法 |
CN104088012B (zh) * | 2014-07-31 | 2016-09-07 | 中国电子科技集团公司第二十六研究所 | 一种直接生长蓝宝石整流罩的设备 |
CN104532341B (zh) * | 2014-12-15 | 2017-04-05 | 江苏苏博瑞光电设备科技有限公司 | 用于蓝宝石试管生长的坩埚结构及蓝宝石试管的生长方法 |
CN113737273B (zh) * | 2021-09-23 | 2022-06-24 | 安徽光智科技有限公司 | 球罩窗口的制备装置及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0653504A1 (fr) * | 1993-11-16 | 1995-05-17 | Commissariat A L'energie Atomique | Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu |
US5879098A (en) * | 1996-04-03 | 1999-03-09 | Commissariat A L'energie Atomique | Device for the tight crossing of a partition by a mobile member |
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2012
- 2012-06-01 CN CN201210179450.2A patent/CN102703980B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0653504A1 (fr) * | 1993-11-16 | 1995-05-17 | Commissariat A L'energie Atomique | Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu |
US5879098A (en) * | 1996-04-03 | 1999-03-09 | Commissariat A L'energie Atomique | Device for the tight crossing of a partition by a mobile member |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2743354C1 (ru) * | 2020-08-31 | 2021-02-17 | Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) | Способ получения торцевых поверхностей с кривизной на монокристаллах сапфира |
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Inventor after: Wang Nan Inventor after: Zhao Qing Inventor after: Jia Jianguo Inventor before: Jia Jianguo Inventor before: Hu Gaohua Inventor before: Liang Zhian Inventor before: Li Hongxing Inventor before: Chen Yixin Inventor before: Wang Yuanyuan |
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Free format text: CORRECT: INVENTOR; FROM: JIA JIANGUO HU GAOHUA LIANG ZHIAN LI HONGXING CHEN YIXIN WANG YUANYUAN TO: WANG NAN ZHAO QING JIA JIANGUO |
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Effective date of registration: 20170717 Address after: Figure 028000 Town Industrial Park Tongliao city the Inner Mongolia Autonomous Region Muli Horqin district Patentee after: Bourne smile sapphire Co., Ltd. Address before: 237321 Jinzhai Economic Development Zone, Anhui, Lu'an Patentee before: Homford Crystal Technology (Anhui) Co., Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Figure 028000 Town Industrial Park Tongliao city the Inner Mongolia Autonomous Region Muli Horqin district Patentee after: Tongliao Seiko Sapphire Co., Ltd. Address before: Figure 028000 Town Industrial Park Tongliao city the Inner Mongolia Autonomous Region Muli Horqin district Patentee before: Bourne smile sapphire Co., Ltd. |