CN102703975A - Method for improving crystal quality of mono-like - Google Patents
Method for improving crystal quality of mono-like Download PDFInfo
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- CN102703975A CN102703975A CN2012101418063A CN201210141806A CN102703975A CN 102703975 A CN102703975 A CN 102703975A CN 2012101418063 A CN2012101418063 A CN 2012101418063A CN 201210141806 A CN201210141806 A CN 201210141806A CN 102703975 A CN102703975 A CN 102703975A
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Abstract
The invention relates to a method for improving the crystal quality of mono-like. The method comprises the following steps of: (1) cleaning of a silicon wafer; (2) rinsing of the silicon wafer; (3) surface treatment of the silicon wafer: forming a silicon nitride passivating film on the surface of the silicon wafer to form a passivating silicon wafer, wherein the thickness of the silicon nitride passivating film is more than 70nm; (4) surface treatment of a high-purity quartz plate: placing and soaking the high-purity quartz plate in solution containing hydrofluoric acid, ammonium fluoride and deionized water for 3 minutes, wherein the purity of the high-purity quartz plate is more than 4N, and the solution proportion of V hydrofluoric acid to V ammonium fluoride to V deionized water is 1 to 7 to 5; (5) cleaning of the high-purity quartz plate; (6) spraying of the high-purity quartz plate; and (7) placement of the high-purity quartz plate. By virtue of the method, the service life of a crystal ingot of the mono-like is obviously prolonged, and the absolute benefit of the crystal ingot is improved by 4 percent; and meanwhile, the high-purity quartz plate subjected to the surface treatment can be recycled, so that the production cost is reduced.
Description
Technical field
The present invention relates to a kind of method of type of raising monocrystalline crystal mass.
Background technology
Since the seventies, in view of the finiteness of conventional energy resources supply and the increase of environmental protection pressure, many in the world countries have started the upsurge of development and use sun power.Crystal silicon solar battery grows, can bear advantages such as various environmental changes because of safety height, life-span, the principal item that becomes solar cell occupies dominant position in photovoltaic market.With regard to its crystal habit, mainly contain silicon single crystal, polysilicon and non-crystalline silicon three major types.The amorphous silicon battery cost is low, production efficiency is high but efficiency of conversion is also lower and because the S-W effect of non-crystalline silicon causes its stability relatively poor; The battery conversion efficiency of silicon single crystal is high, good stability, but the drawing process relative complex, and tighter to ingredient requirement, cause finished product battery cost higher; The polysilicon ME is simple, with low cost, production efficiency is high; But relative pulling of silicon single crystal, the battery efficiency of ingot casting polysilicon is wanted little 1-2%, and its major cause is owing to have defectives such as a large amount of crystal boundaries and dislocation in the ingot casting polysilicon; They introduce deep energy level in the silicon forbidden band; Become the strong deathnium of minority carrier, reduce the photoelectric transformation efficiency of solar cell, and the reduction of photoelectric efficiency will cause finished product battery cost to raise.
The photovoltaic industry extensively adopts the ingot casting crystal silicon (type monocrystalline) of seed crystal induction method ingot production single crystal direction, big crystal grain at present; Like patent CN 101654805A, thereby reduce crystal boundary and dislocation desity, improve crystal mass; Improve battery efficiency, reduce finished product battery cost.But there is certain defective in this method, promptly in the ingot production process, because seed crystal contacts with crucible for a long time; Under hot conditions, become the diffusion of contaminants passage; Make the impurity of high density diffuse into crystal ingot, cause the crystal mass variation, reduce the ingot casting income by crucible; Increase production cost, become the key factor that hinders the industrialization of seed crystal inductive technology at present.Therefore need a kind of suitable method of exploitation to improve crystal mass, improve the crystal ingot income, for promoting seed crystal inductive technology industrialization and reducing production costs particularly important.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency of prior art, a kind of method of type of raising monocrystalline crystal mass is provided, effectively improve a type monocrystalline crystal mass.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method of type of raising monocrystalline crystal mass is characterized in that: have following steps:
(1) silicon chip cleans: primary silicon chip is removed surface impurity and greasy dirt.
(2) silicon chip rinsing: behind the silicon chip that cleaned, dry up with the ultrapure water rinsing.
(3) silicon chip surface is handled: utilize plasma enhanced chemical vapor deposition method (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to handle silicon chip, form silicon nitride passive film, silicon nitride passivation film thickness at silicon chip surface>70nm, form the passivation silicon chip.
(4) high purity quartz plate surface treatment: the Chun Du > of high purity quartz plate; 4N places hydrofluoric acid (HF), Neutral ammonium fluoride (NH with the high purity quartz plate
4F), soak solution ratio in the solution of deionized water configuration: V
Hydrofluoric acid: V
Neutral ammonium fluoride: V
Deionized water=1:7:5, Jin Paoshijian>3min.
(5) the high purity quartz plate cleans: place deionized water for ultrasonic to clean the high purity quartz plate after the surface treatment and dry up.
(6) high purity quartz plate spraying: adopt silicon nitride solution spraying quartz plate, the silicon nitride passivation film thickness>50 μ m, dry for use.
(7) lay: high purity quartz plate, passivation silicon chip, the block seed crystal after will handling successively from bottom to up is tiled in quartz crucible bottom, electroactive adulterant and polycrystalline silicon raw material is placed on simultaneously carries out ingot casting on the block seed crystal then.
The invention has the beneficial effects as follows: utilize high purity quartz plate and the barrier effect of passivation silicon chip after the surface treatment, be reduced in the diffusion of impurity in the crucible in the ingot casting process.Thereby reduce the foreign matter content of crystal ingot, improve the minority carrier life time of crystal ingot, improve the crystal ingot quality; Improve the ingot casting income, a type monocrystalline crystal ingot minority carrier life time is improved significantly, and the crystal ingot absolute benefit improves 4%; Surface treated high purity quartz plate can repeatedly utilize simultaneously, reduces production costs.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further specified.
Fig. 1 is the pattern after the surface treatment of high purity quartz plate among the present invention;
Embodiment
Combine accompanying drawing that the present invention is further described now.These accompanying drawings are the synoptic diagram of simplification substruction of the present invention only are described in a schematic way, so it only shows the formation relevant with the present invention.
Embodiment one:
(1) silicon chip cleans: primary silicon chip is removed surface impurity and greasy dirt.Cleaning solvent and cleaning are with reference to the conventional cleaning in this area here.
(2) silicon chip rinsing: behind the silicon chip that cleaned, dry up with the ultrapure water rinsing;
(3) silicon chip surface is handled: utilize Low Pressure Chemical Vapor Deposition (LPCVD handles silicon chip, and depositing time: 500～600min forms silicon nitride passive film, silicon nitride passivation film thickness at silicon chip surface>70nm, preferred 1.25 μ m, formation passivation silicon chip.But this step also using plasma strengthens chemical Vapor deposition process PECVD processing silicon chip, and deposition parameter is with reference to this area common process parameter.
(4) high purity quartz plate surface treatment: the Chun Du > of high purity quartz plate; 4N places hydrofluoric acid (HF), Neutral ammonium fluoride (NH with the high purity quartz plate
4F), soak liquor capacity proportioning: V in the solution of deionized water configuration
Hydrofluoric acid: V
Neutral ammonium fluoride: V
Deionized water=1:7:5, Jin Paoshijian>3min,
(5) the high purity quartz plate cleans: place deionized water for ultrasonic to clean the high purity quartz plate after the surface treatment; Ultrasonic frequency: 20～100kHZ; Preferred 80kHZ; Dry up the high purity quartz plate surfaceness after the surface treatment>100Ra, the high purity quartz plate surfaceness during the preferred 80Khz of ultrasonic frequency after the surface treatment is 180Ra.
(6) high purity quartz plate spraying: adopt silicon nitride solution spraying quartz plate, the silicon nitride passivation film thickness>50 μ m, dry for use;
(7) lay: high purity quartz plate, passivation silicon chip, the block seed crystal after will handling successively from bottom to up is tiled in quartz crucible bottom, electroactive adulterant and polycrystalline silicon raw material is placed on simultaneously carries out ingot casting on the block seed crystal then.Ingot casting, tear open and block back test minority carrier life time behind ingot, the evolution and calculate the ingot casting yield.
High purity quartz plate among employing the present invention after surface treatment carries out ingot casting and adopts non-processor high purity quartz plate to carry out ingot casting comparing, and test data of experiment is following:
Can be known that by experimental data the class monocrystalline crystal ingot minority carrier life time that present embodiment obtains is improved significantly, the crystal ingot absolute benefit improves 4%, and the high purity quartz plate can repeatedly use.
Utilize high purity quartz plate and the barrier effect of passivation silicon chip after the surface treatment, be reduced in the diffusion of impurity in the crucible in the ingot casting process, thereby reduce the foreign matter content of crystal ingot; Improve the minority carrier life time of crystal ingot, improve the crystal ingot quality, improve the ingot casting income; Class monocrystalline crystal ingot minority carrier life time is improved significantly; The crystal ingot absolute benefit improves 4%, and surface treated high purity quartz plate can repeatedly utilize simultaneously, reduces production costs.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification sheets, must confirm its technical scope according to the claim scope.
Claims (1)
1. the method for type of a raising monocrystalline crystal mass is characterized in that: have following steps:
(1) silicon chip cleans: primary silicon chip is removed surface impurity and greasy dirt;
(2) silicon chip rinsing: behind the silicon chip that cleaned, dry up with the ultrapure water rinsing;
(3) silicon chip surface is handled: utilize plasma enhanced chemical vapor deposition method or Low Pressure Chemical Vapor Deposition to handle silicon chip, form silicon nitride passive film, silicon nitride passivation film thickness at silicon chip surface>70nm, form the passivation silicon chip;
(4) high purity quartz plate surface treatment: the Chun Du > of high purity quartz plate; 4N places the solution of hydrofluoric acid, Neutral ammonium fluoride, deionized water configuration to soak solution ratio the high purity quartz plate: V
Hydrofluoric acid: V
Fluorine Change ammonium: V
Deionized water=1:7:5, Jin Paoshijian>3min;
(5) the high purity quartz plate cleans: place deionized water for ultrasonic to clean the high purity quartz plate after the surface treatment and dry up;
(6) high purity quartz plate spraying: adopt silicon nitride solution spraying quartz plate, the silicon nitride passivation film thickness>50 μ m, dry for use;
(7) lay: high purity quartz plate, passivation silicon chip, the block seed crystal after will handling successively from bottom to up is tiled in quartz crucible bottom, electroactive adulterant and polycrystalline silicon raw material is placed on simultaneously carries out ingot casting on the block seed crystal then.
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| CN2012101418063A CN102703975A (en) | 2012-05-08 | 2012-05-08 | Method for improving crystal quality of mono-like |
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| CN2012101418063A CN102703975A (en) | 2012-05-08 | 2012-05-08 | Method for improving crystal quality of mono-like |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104088013A (en) * | 2014-07-15 | 2014-10-08 | 常州天合光能有限公司 | Method for preparing efficient ingot casting polycrystal |
| CN104152990A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding particle and preparation method thereof |
| CN104152989A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding plate and preparation method thereof |
| CN104152988A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding device and seeding method thereof |
| CN105568364A (en) * | 2015-12-30 | 2016-05-11 | 佛山市业丰赛尔陶瓷科技有限公司 | Method for improving yield and/or conversion efficiency of cast monocrystalline silicon ingot |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337582A (en) * | 2010-07-14 | 2012-02-01 | 中美硅晶制品股份有限公司 | Method for manufacturing silicon crystal ingot |
| CN102362016A (en) * | 2009-01-30 | 2012-02-22 | Amg艾迪卡斯特太阳能公司 | Seed layers and process of manufacturing seed layers |
-
2012
- 2012-05-08 CN CN2012101418063A patent/CN102703975A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102362016A (en) * | 2009-01-30 | 2012-02-22 | Amg艾迪卡斯特太阳能公司 | Seed layers and process of manufacturing seed layers |
| CN102337582A (en) * | 2010-07-14 | 2012-02-01 | 中美硅晶制品股份有限公司 | Method for manufacturing silicon crystal ingot |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104088013A (en) * | 2014-07-15 | 2014-10-08 | 常州天合光能有限公司 | Method for preparing efficient ingot casting polycrystal |
| CN104088013B (en) * | 2014-07-15 | 2016-08-24 | 常州天合光能有限公司 | A kind of method preparing efficient ingot casting polycrystalline |
| CN104152990A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding particle and preparation method thereof |
| CN104152989A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding plate and preparation method thereof |
| CN104152988A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding device and seeding method thereof |
| CN105568364A (en) * | 2015-12-30 | 2016-05-11 | 佛山市业丰赛尔陶瓷科技有限公司 | Method for improving yield and/or conversion efficiency of cast monocrystalline silicon ingot |
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Application publication date: 20121003 |