CN102695007A - Image sensor and driving method thereof - Google Patents
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- CN102695007A CN102695007A CN2012101546470A CN201210154647A CN102695007A CN 102695007 A CN102695007 A CN 102695007A CN 2012101546470 A CN2012101546470 A CN 2012101546470A CN 201210154647 A CN201210154647 A CN 201210154647A CN 102695007 A CN102695007 A CN 102695007A
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Abstract
The invention relates to an image sensor and a driving method thereof. The image sensor comprises a plurality of pixel units, transmission pipe row connecting wires, signal column connecting wires and row-gating tube row connecting wires, wherein each pixel unit comprises photosensitive units and reading circuits; each photosensitive unit comprises a photodiode and a transmission pipe; each reading circuit comprises a resetting pipe, a source follower and a row gating tube; the photosensitive units on the same column in each pixel unit share one reading circuit; the transmission pipe row connecting wires are used for uploading transmission pipe continuity signals; the transmission pipes on the same row share one transmission pipe row connecting wire; the signal column connecting wires are connected with the reading circuits and are used for outputting the signals; the row-gating tube row connecting wires are connected with the row gating tubes of the reading circuits and are used for uploading row gating tube continuity signals to the row gating tubes; the reading circuits in each pixel unit share one signal column connecting wire; and the row-gating tube row connecting wires in each pixel unit are used for carrying out time-sharing uploading on the row gating tube continuity signals, so that each reading circuit in each pixel unit outputs the signal in a time-sharing mode. The invention can reduce the problem of light blocking of a metal layer.
Description
Technical field
The present invention relates to image processing field, relate in particular to a kind of imageing sensor and driving method thereof.
Background technology
Imageing sensor belongs to the photoelectric cell class in the opto-electronics; Along with developing rapidly of digital technology, semiconductor fabrication and network; Existing market and industry all are faced with the arrival in the video signal of crossing over each platform, audio-visual, big integration epoch of communication, and cropping the beautiful scenery of following human daily life.Therefore, image sensor products becomes the object that current and following industry is paid close attention to, and is attracting numerous manufacturers to drop into.Distinguish with product category, image sensor products mainly is divided into ccd image sensor (charge-coupled image sensor), cmos image sensor (complementary metal oxide imageing sensor).
The dot structure of existing C mos image sensor mainly is divided into two kinds, is respectively 3T dot structure and 4T dot structure.Each pixel comprises a photodiode, a reset transistor, a capable gate tube and a source follower in the 3T dot structure.The 4T dot structure has increased a transfer tube than 3T dot structure.For the 4T dot structure, each photodiode always needs a transfer tube, and said transfer tube makes the controllability of photodiode better, can reduce thermal noise and dark current effectively.
Fig. 1 shows the circuit diagram of 4T dot structure in the prior art.As shown in Figure 1, the pixel of 4T dot structure comprises: photodiode 11 and 4 transistors, wherein; Photodiode 11 constitutes photosensitive unit with transfer tube 12; Said transfer tube 12 be used for photodiode (Photo Diode, PD) 11 charge transfer that produce to floating diffusion region (Floating Diffusion, FD); Reset transistor 13 is used for floating diffusion region is resetted, and source follower 14 is used for the signal of telecommunication of floating diffusion region is amplified output.The course of work of said pixel is: make photodiode 11 receive light, to collect photogenerated charge; Conducting row gate tube 15 afterwards, this delegation of gating; Open reset transistor 13, close reset transistor 13 afterwards, make the floating diffusion region of each photosensitive unit be in reset mode, read reset level through source follower 14 and row gate tube 15; Open transfer tube 12 then and close transfer tube 12 that (this moment, photodiode 11 got into the time of integration; Promptly receive light to collect the time of photogenerated charge); Through source follower 14 and row gate tube 15 read output signal level, said reset level and signal level are subtracted each other the acquisition read output signal.Close capable gate tube 15 at last, next line is carried out similar operations, thereby obtain the read output signal of each photosensitive unit.
Imageing sensor also is provided with the metal level that links to each other with transistor except being provided with above-mentioned transistor with different effects, in order to signal to be provided to transistor, and perhaps read output signal from transistor.Such as: the line direction metal level with the grid of transfer tube 12 in each photosensitive unit links to each other is used for to transfer tube 12 Continuity signal being provided.Again such as: the column direction metal level that links to each other of source electrode with row gate tube 15 in the pixel is used to export signal.Common said metal level all links to each other with each pixel, runs through the row or the row of imageing sensor usually.
Along with pixel is done littler and littler, the opening that metal level surrounds also reduces gradually.In order to increase said opening, developed many pixels shared structure in the prior art.In said many pixels shared structure, a plurality of pixel shared portion transistors reducing transistorized quantity, thereby can increase the area of photodiode 11.
With reference to figure 2, show the sketch map of 8 pixel shared structures, one embodiment in the prior art.Photosensitive unit as shown in Figure 2, that the matrix form of each pixel cell (4 row, 2 row) type that includes into 4 * 2 is arranged in the said 8 pixel shared structures, each photosensitive unit includes a photodiode PD
i(i=0,1,2 ... 7) and the transfer tube TX that links to each other with photodiode
i(i=0,1,2 ... 7).
Said 8 pixel shared structures also comprise and each transfer tube TX
i(i=0,1,2 ... 7) the capable connecting line R that links to each other
i(i=0,1,2 ... 7), particularly, the transfer tube TX of each photosensitive unit
i(i=0,1,2 ... 7) grid and the capable connecting line R corresponding with it
i(i=0,1,2 ... 7) link to each other.In the course of work of imageing sensor, to said capable connecting line R
i(i=0,1,2 ... 7) load the transfer tube Continuity signal on successively, with the transfer tube TX in each photosensitive unit of conducting successively
i(i=0,1,2 ... 7).
Said 8 photosensitive unit shared structures are shared a reset transistor RST, source follower SF and row gate tube SEL, and said reset transistor RST, source follower SF and row gate tube SEL constitute reading circuit, to realize reading signal.Particularly, the drain electrode of said reset transistor RST and source follower SF all links to each other with supply voltage, and via row connecting line VDD loading power voltage, the source electrode of said capable gate tube SEL links to each other with row connecting line PXD, via row connecting line PXD output signal.Said 8 pixel shared structures are provided with two row connecting line VDD, PXD at column direction.
Because reset transistor RST needs loading reset pipe Continuity signal; The grid of row gate tube SEL needs load rows gate tube Continuity signal; Said 8 pixel shared structure line directions are provided with respectively the capable connecting line (not shown) that links to each other with the grid of the grid of reset transistor RST and row gate tube SEL, also are provided with 8 capable connecting line R that link to each other with the grid of transfer tube shown in Figure 1
i(i=0,1,2 ... 7).This shows that said 8 pixel shared structures are provided with 10 connecting lines altogether at line direction.More row, row connecting line cause the metal level light-baffling phenomena easily.
Summary of the invention
The present invention provides a kind of imageing sensor and driving method thereof, to reduce the problem that metal level is in the light.
For addressing the above problem, the present invention provides a kind of imageing sensor, comprising: a plurality of pixel cells, said pixel cell comprise a plurality of photosensitive unit that ranks arrange and reading circuits that link to each other with photosensitive unit of being; Said photosensitive unit comprises photodiode and transfer tube; Said reading circuit comprises reset transistor, source follower and row gate tube; Be positioned at the shared reading circuit of photosensitive unit of same row in pixel cell; Said imageing sensor also comprises the capable connecting line of the transfer tube that links to each other with said transfer tube, is used to load the transfer tube Continuity signal, with the capable connecting line of the shared transfer tube of the transfer tube of delegation; Said imageing sensor also comprises: the power supply row connecting line that links to each other with said reading circuit is used for to said reading circuit operating voltage being provided; The signal train connecting line that links to each other with said reading circuit is used to export signal; With the capable connecting line of capable gate tube that the grid of the capable gate tube of said reading circuit links to each other, be used for to row gate tube load rows gate tube Continuity signal; Reset transistor row connecting line with the grid of the reset transistor of said reading circuit links to each other is used for to reset transistor loading reset pipe Continuity signal; The shared signal train connecting line of each reading circuit in pixel cell; The capable connecting line of capable gate tube in pixel cell is used for timesharing load rows gate tube Continuity signal, and each row gate tube of conducting makes each reading circuit timesharing output signal in the pixel cell successively.
Alternatively, said power supply row connecting line links to each other with the drain electrode of reset transistor and the drain electrode of source follower.
Alternatively, said power supply row connecting line links to each other with the drain electrode of source follower; Said imageing sensor also comprises control signal row connecting line, links to each other with the drain electrode of said reset transistor, is used for to said reset transistor operating voltage being provided.
Alternatively, said signal train connecting line links to each other the shared signal train connecting line of the capable gate tube of a pixel cell with the source electrode of row gate tube.
Alternatively, said power supply row connecting line links to each other with the drain electrode of reset transistor and the drain electrode of row gate tube.
Alternatively, said power supply row connecting line links to each other with the drain electrode of row gate tube, and said imageing sensor also comprises control signal row connecting line, links to each other with the drain electrode of said reset transistor, is used for to said reset transistor operating voltage being provided.
Alternatively, said signal train connecting line links to each other with the source electrode of said source follower, the shared signal train connecting line of the source follower of a pixel cell.
Alternatively, the shared reset transistor row connecting line of the reset transistor in the same pixel cell.
Alternatively, the transfer tube in the said imageing sensor, reset transistor, source follower and row gate tube are the NMOS pipe; Said pixel cell comprises 8 photosensitive units, and said 8 photosensitive units are 4 row, 2 row and arrange; Said pixel cell also comprises first reading circuit and second reading circuit, is respectively applied for 4 photosensitive units, 4 photosensitive units in the secondary series in first row in the pixel cell are carried out signal output; Said imageing sensor also comprises 1 power supply row connecting line, 1 bars row connecting line, 4 capable connecting lines of transfer tube, 2 capable connecting lines of capable gate tube and 1 reset transistor row connecting line; Wherein, The drain electrode of the reset transistor in said power supply row connecting line and said first reading circuit and second reading circuit and the drain electrode of source follower all link to each other, and are used to provide operating voltage; The source electrode of the capable gate tube in said signal train connecting line and said first reading circuit and second reading circuit all links to each other, and is used to export signal; The grid of reset transistor all links to each other in said reset transistor row connecting line and first reading circuit and second reading circuit, is used for loading reset pipe Continuity signal; Said 4 capable connecting lines of transfer tube link to each other with the grid of transfer tube in 4 row respectively, are used to load the transfer tube Continuity signal; Said 2 capable connecting lines of capable gate tube, respectively with first reading circuit and second reading circuit in the grid of capable gate tube link to each other, be used for timesharing load rows gate tube Continuity signal, so that said signal train connecting line timesharing output signal.
Correspondingly, the present invention also provides a kind of driving method of imageing sensor, comprising: close transfer tube, make photodiode receive light, to produce photogenerated charge; Reset signal is provided, makes each reset transistor conducting,, close reset transistor then so that the floating diffusion region of each photosensitive unit is in reset mode; Capable gate tube to each row reading circuit of pixel cell provides Continuity signal successively, to export the reset signal of each row photosensitive unit successively; The conducting transfer tube so that the photogenerated charge in the photodiode is transferred to floating diffusion region, is closed transfer tube then; Capable gate tube to each row reading circuit of pixel cell provides Continuity signal successively, to export the corresponding read output signal of each row photosensitive unit successively.
Compared with prior art, the present invention has the following advantages:
With the capable connecting line of the shared transfer tube of the transfer tube of delegation, and the shared reading circuit of the photosensitive unit of same row, therefore, the transfer tube that is positioned at delegation links to each other with different reading circuits respectively.The shared signal train connecting line of each reading circuit; The capable connecting line of capable gate tube in pixel cell is used for timesharing load rows gate tube Continuity signal; Successively conducting each the row gate tube; Thereby the pairing signal of photodiode that each reading circuit in the pixel cell is linked to each other with transfer tube via said signal train connecting line output, the present invention adopts capable connecting line of the transfer tube of lesser amt and signal train connecting line, has realized that the control of photodiode and signal read; Reduce the quantity of metal level, and then can reduce the problem that metal level is in the light.
Description of drawings
Fig. 1 is the sketch map of imageing sensor one embodiment in the prior art;
Fig. 2 is the sketch map of 8 pixel shared structures, one embodiment in the prior art
Fig. 3 is the sketch map of image sensor pixel cells first embodiment of the present invention;
The sketch map of this imageing sensor input signal one embodiment shown in Figure 3 of Fig. 4;
Fig. 5 is the sketch map of image sensor pixel cells second embodiment of the present invention;
Fig. 6 is the schematic flow sheet of imageing sensor driving method one execution mode of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
To the problem described in the background technology, the present invention provides a kind of imageing sensor, comprising: a plurality of pixel cells, said pixel cell comprise a plurality of photosensitive unit that ranks arrange and reading circuits that link to each other with photosensitive unit of being; Said photosensitive unit comprises photodiode and transfer tube; Said reading circuit comprises reset transistor, source follower and row gate tube; Be positioned at the shared reading circuit of photosensitive unit of same row in pixel cell; Said imageing sensor also comprises the capable connecting line of the transfer tube that links to each other with said transfer tube, is used to load the transfer tube Continuity signal, with the capable connecting line of the shared transfer tube of the transfer tube of delegation; Said imageing sensor also comprises: the power supply row connecting line that links to each other with said reading circuit is used for to said reading circuit operating voltage being provided; The signal train connecting line that links to each other with said reading circuit is used to export signal; With the capable connecting line of capable gate tube that the grid of the capable gate tube of said reading circuit links to each other, be used for to row gate tube load rows gate tube Continuity signal; Reset transistor row connecting line with the grid of the reset transistor of said reading circuit links to each other is used for to reset transistor loading reset pipe Continuity signal; The shared signal train connecting line of each reading circuit in pixel cell; The capable connecting line of capable gate tube in pixel cell is used for timesharing load rows gate tube Continuity signal, and each row gate tube of conducting makes each reading circuit timesharing output signal in the pixel cell successively.
Among the present invention with the capable connecting line of the shared transfer tube of the transfer tube of delegation, and the shared reading circuit of the photosensitive unit of same row, therefore, the transfer tube that is positioned at delegation links to each other with different reading circuits respectively.The shared signal train connecting line of each reading circuit; The capable connecting line of capable gate tube in pixel cell is used for timesharing load rows gate tube Continuity signal; Each row gate tube of conducting successively, thereby the pairing signal of photodiode that each reading circuit in the pixel cell is linked to each other with transfer tube via said signal train connecting line output.Capable connecting line of said transfer tube and signal train connecting line are formed by metal level; The present invention adopts capable connecting line of the transfer tube of lesser amt and signal train connecting line; Realized that the control and the signal of photodiode read, can reduce the problem that metal level is in the light, improved the performance of imageing sensor.
Below in conjunction with specific embodiment technical scheme of the present invention is further specified.
With reference to figure 3, show the imageing sensor first embodiment sketch map of the present invention.
Imageing sensor comprises a plurality of pixel cells that ranks are arranged that are.Particularly, pixel cell comprises the photosensitive unit that is used for light signal is converted into the signal of telecommunication, is used for the reading circuit that the said signal of telecommunication is read.Need to prove, clearer, succinct in order to make accompanying drawing, be that example is illustrated only among Fig. 3 with a pixel cell.
As shown in Figure 3, a pixel cell comprises and is 8 photosensitive units and 2 reading circuits that 4 row, 2 column matrix formulas are arranged in the present embodiment, wherein is positioned at the shared reading circuit of photosensitive unit of same row.Need to prove that the present invention is to the quantity of photosensitive unit in the pixel cell, and the mode that photosensitive unit becomes several row of several row to arrange does not limit.
In the present embodiment, each photosensitive unit includes a photodiode PD
i(i=0,1,2 ... 7) and the transfer tube TX that links to each other with said photodiode
i(i=0,1,2 ... 7).Wherein, photodiode PD
i(i=0,1,2 ... 7) be used to receive light, to produce photogenerated charge; Transfer tube TX
i(i=0,1,2 ... 7) be used for when conducting state, the photogenerated charge of photodiode being transferred to floating diffusion region, to form read output signal.Particularly; First photosensitive unit comprises the first photodiode PD0 and the first transfer tube TX0; Second photosensitive unit comprises the second photodiode PD1 and the second transfer tube TX1; The 3rd photosensitive unit comprises the 3rd photodiode PD2 and the 3rd transfer tube TX2, and the 4th photosensitive unit comprises the 4th photodiode PD3 and the 4th transfer tube TX3
Said reading circuit comprises: be used for the reset transistor that the floating diffusion region to photosensitive unit resets, be used for the source follower that the signal of telecommunication with floating diffusion region amplifies, be used for when conducting the capable gate tube with signal output.In the present embodiment, transfer tube, reset transistor, row gate tube and source follower are the NMOS pipe, but the present invention does not limit this.
Particularly, said reading circuit comprises the shared second shared reading circuit of first reading circuit, each photosensitive unit of secondary series of first each photosensitive unit of row, is used for reading respectively the signal of first each photosensitive unit of row, each photosensitive unit of secondary series.
Said first reading circuit comprises: the first reset transistor RST0, the first source follower SF0 and the first row gate tube SEL0.Wherein, the drain electrode of the SF0 of said first source follower links to each other with the drain electrode of the first reset transistor RST0, and the source electrode of the SF0 of said first source follower links to each other with the drain electrode of the said first row gate tube SEL0.Said second reading circuit comprises: the second reset transistor RST1, the second source follower SF1 and the second row gate tube SEL1.Wherein, the drain electrode of the SF1 of said second source follower links to each other with the drain electrode of second pipe RST1, and the source electrode of the SF1 of said second source follower links to each other with the drain electrode of the said second row gate tube SEL1.
As shown in Figure 3, the drain electrode that is positioned at the first transfer tube TX0, the 3rd transfer tube TX2, the 5th transfer tube TX4 and the 7th transfer tube TX6 of first row all links to each other with the source electrode of the first reset transistor RST0, also links to each other with the grid of the first source follower SF0 simultaneously.The drain electrode that is positioned at the second transfer tube TX1, the 4th transfer tube TX3, the 6th transfer tube TX5 and the 8th transfer tube TX7 of secondary series all links to each other with the source electrode of the second reset transistor RST1, also links to each other with the grid of the second source follower SF1 simultaneously.
For the control that realizes devices such as transfer tube, reset transistor, source follower and row gate tube or the output of signal, said imageing sensor also comprises capable connecting line and the row connecting line that is formed by metal level.
Particularly; Said imageing sensor also comprises the capable connecting line of the transfer tube that links to each other with the grid of transfer tube; Be used to load the transfer tube Continuity signal in the capable connecting line of said transfer tube so that the transfer tube conducting wherein, is positioned at the capable connecting line of the shared transfer tube of the transfer tube of delegation.As shown in Figure 3, in the present embodiment, pixel cell comprises 4 capable connecting lines of transfer tube, and wherein, the capable connecting line R1 of first transfer tube links to each other with first transfer tube TX0 that is positioned at the 1st row and the grid of the second transfer tube TX1; The capable connecting line R2 of second transfer tube links to each other with the 3rd transfer tube TX2 that is positioned at the 2nd row and the grid of the 4th transfer tube TX3; The capable connecting line R3 of the 3rd transfer tube links to each other with the 5th transfer tube TX4 that is positioned at the 3rd row and the grid of the 6th transfer tube TX5; The capable connecting line R4 of the 4th transfer tube links to each other with the 7th transfer tube TX6 that is positioned at the 4th row and the grid of the 8th transfer tube TX7.
Said imageing sensor also comprises the first reset transistor row connecting line (figure does not show), the second reset transistor row connecting line (figure does not show) that links to each other with the grid of the first reset transistor RST0, the second reset transistor RST1 respectively, is used for the grid loading reset pipe Continuity signal to the first reset transistor RST0, the second reset transistor RST1.The reset signal of the first reset transistor RST0, the second reset transistor RST1 is identical in the present embodiment; Therefore the first reset transistor RST0, the shared reset transistor row connecting line of the second reset transistor RST1 (promptly replacing the first reset transistor row connecting line and the second reset transistor row connecting line) by a reset transistor row connecting line; But invention does not limit this; In other embodiments; The first reset transistor RST0, the second reset transistor RST1 can also load different reset transistor Continuity signals, and the said first reset transistor row connecting line, the second reset transistor row connecting line can also be respectively independently capable connecting line.
Said imageing sensor also comprises the capable connecting line of the first row gate tube (figure does not show), the second row gate tube capable (figure does not show) that links to each other with the grid of the first row gate tube SEL0, the second row gate tube SEL1 respectively; Be used for timesharing to the first row gate tube SEL0, the second row gate tube SEL1 load rows gate tube Continuity signal; With the first row gate tube SEL0 of conducting successively, the second row gate tube SEL1, realize timesharing output signal.
Said pixel cell also comprises the power supply row connecting line VDD that links to each other with said reading circuit, is used for to said reading circuit operating voltage being provided.In the present embodiment, power supply row connecting line VDD links to each other with the drain electrode of the first reset transistor RST0, the second reset transistor RST1 and the drain electrode of the first source follower SF0, the second source follower SF1.But the present invention does not limit this; In other embodiments; Said power supply row connecting line VDD can also only link to each other with the drain electrode of the first source follower SF0, the second source follower SF1; Said imageing sensor also comprises control signal row connecting line, links to each other with the drain electrode of the first reset transistor RST0, the second reset transistor RST1, is used for to the drain electrode of the first reset transistor RST0, the second reset transistor RST1 operating voltage being provided.
Said imageing sensor also comprises the signal train connecting line PXD that links to each other with said reading circuit, is used to export signal.In the present embodiment, the shared signal train connecting line PXD of each reading circuit in pixel cell.As shown in Figure 3, the source electrode of the said signal train connecting line PXD and the first row gate tube SEL0, the second row gate tube SEL1 links to each other, and realizes shared to said signal train connecting line PXD of first reading circuit and second reading circuit.
Be described in detail below in conjunction with the drive signal of imageing sensor shown in Figure 4 operation principle imageing sensor of the present invention.
The required drive signal of imageing sensor work shown in Figure 3 comprises: reset transistor Continuity signal 101, the first row gate tube Continuity signal 102, the second row gate tube signal 103, the first transfer tube Continuity signal 104, the second transfer tube Continuity signal 105, the 3rd transfer tube Continuity signal 106 and the 4th transfer tube Continuity signal 107.
During imageing sensor work, at first, each drive signal is low level, thereby makes transfer tube TX
i(i=0,1,2 ... 7) be in the closed condition state, make photodiode PD
i(i=0,1,2 ... 7) receive light, to produce photogenerated charge;
Afterwards; Convert high level via reset transistor row connecting line into to the reset transistor Continuity signal 101 of the first reset transistor RST0 and the loading of the second reset transistor RST1 grid, thereby make the first reset transistor RST0, the second reset transistor RST1 conducting, so that the floating diffusion region of each photosensitive unit is in reset mode; Form floating diffusion region first voltage; Afterwards, reset transistor Continuity signal 101 converts low level into, and the first reset transistor RST0, the second reset transistor RST1 are closed.
After reset transistor Continuity signal 101 converts low level into; Convert high level via the capable connecting line of the first row gate tube into to the first row gate tube Continuity signal 102 that the first row gate tube SEL0 grid loads; Thereby make the first row gate tube SEL0 be in conducting state; And then the signal train connecting line PXD that links to each other via the source electrode with the first row gate tube SEL0 exports the first row photosensitive unit reset signal of (comprising first photosensitive unit), promptly export first be listed as in four pairing signals of photosensitive unit floating diffusion region first voltage.Accomplish after the output of the first row photosensitive unit reset signal, the first row gate tube Continuity signal 102 converts low level into, makes the first row gate tube SEL0 be in closed condition.
After the first row gate tube Continuity signal 102 converts low level into; Convert high level via the capable connecting line of the second row gate tube into to the second row gate tube Continuity signal 103 that the second row gate tube SEL1 grid loads; Thereby make the second row gate tube SEL1 be in conducting state; And then, promptly export four pairing signals of photosensitive unit floating diffusion region first voltage in the secondary series via the reset signal that the signal train connecting line PXD that the source electrode with the second row gate tube SEL1 links to each other exports secondary series photosensitive unit (comprising second photosensitive unit).Accomplish after the output of secondary series photosensitive unit reset signal, the second row gate tube Continuity signal 103 converts low level into, makes the second row gate tube SEL1 be in closed condition.
After the second row gate tube SEL1 is in closed condition, convert high level into to the first transfer tube Continuity signal 104 of the first transfer tube TX0 and the loading of the second transfer tube TX1 grid via the capable connecting line R1 of first transfer tube; Thereby make the first transfer tube TX0 and the second transfer tube TX1 be in conducting state; Thereby make respectively the first photodiode PD0 that links to each other with, the second transfer tube TX1 with the first transfer tube TX0, the photogenerated charge of the second photodiode PD1 be transferred to corresponding floating diffusion region respectively; Form floating diffusion region second voltage of first photosensitive unit, second photosensitive unit respectively, the first transfer tube Continuity signal 104 converts low level into afterwards.
After the first transfer tube Continuity signal 104 converts low level into; Convert high level via the capable connecting line of the first row gate tube into to the first row gate tube Continuity signal 102 that the first row gate tube SEL0 grid loads; Thereby make the first row gate tube SEL0 be in conducting state; And then, promptly export the pairing signal of the first photosensitive unit floating diffusion region, second voltage via the output signal that the signal train connecting line PXD that the source electrode with the first row gate tube SEL0 links to each other exports first photosensitive unit.Afterwards, the first row gate tube Continuity signal 102 converts low level into, makes the first row gate tube SEL0 be in closed condition.Like this, in conjunction with before the difference of output signal of reset signal (i.e. the reset signal of first photosensitive unit) and said first photosensitive unit of the first row photosensitive unit that obtains realize reading of the first photosensitive unit signal.
After the first row gate tube Continuity signal 102 converts low level into; Convert high level via the capable connecting line of the second row gate tube into to the second row gate tube Continuity signal 103 that the second row gate tube SEL1 grid loads; Thereby make the second row gate tube SEL1 be in conducting state; And then, promptly export the pairing signal of the second photosensitive unit floating diffusion region, second voltage via the output signal that the signal train connecting line PXD that the source electrode with the second row gate tube SEL1 links to each other exports second photosensitive unit.Afterwards, the second row gate tube Continuity signal 103 converts low level into, makes the second row gate tube SEL1 be in closed condition.Like this, realized reading in conjunction with the reset signal (i.e. the reset signal of second photosensitive unit) and the output signal of said second photosensitive unit of the secondary series photosensitive unit that obtains before to the second photosensitive unit signal.
After the second row gate tube Continuity signal 103 converted low level into, reset transistor Continuity signal 101 converted high level into, so that the floating diffusion region of each photosensitive unit is in reset mode, forms floating diffusion region first voltage, closes reset transistor then; Afterwards; To the first row gate tube SEL0 and the second row gate tube SEL1 capable gate tube Continuity signal is provided successively, with export first row (comprising the 3rd photosensitive unit), secondary series photosensitive unit (comprising the 4th photosensitive unit) successively with the corresponding reset signal of said floating diffusion region first voltage; The second transfer tube Continuity signal 105 converts high level into afterwards; The conducting second row transfer tube; So that the photogenerated charge of photodiode is transferred to floating diffusion region in the 3rd photosensitive unit, the 4th photosensitive unit; Form floating diffusion region second voltage of the 3rd photosensitive unit, floating diffusion region second voltage of the 4th photosensitive unit respectively, close the second row transfer tube then; Afterwards, to the first row gate tube SEL0 and the second row gate tube SEL1 capable gate tube Continuity signal is provided successively, exporting the output signal of the 3rd photosensitive unit, the 4th photosensitive unit successively, and then realizes reading of the 3rd photosensitive unit, the 4th photosensitive unit signal.
Similarly; The 3rd transfer tube Continuity signal 106, the 4th transfer tube Continuity signal 107 based on timesharing; First capable gate tube Continuity signal 102, the second capable gate tube Continuity signal 103 in conjunction with timesharing can also obtain reading of the 5th photosensitive unit and 6th sense light unit, the 7th photosensitive unit and the 8th photosensitive unit signal successively.
With reference to figure 5, show the sketch map of imageing sensor second embodiment of the present invention.The part that is basically the same as those in the first embodiment present embodiment repeats no more; The difference of the present embodiment and first embodiment is; The row of power supply described in present embodiment connecting line VDD links to each other with the drain electrode of reset transistor RST1/RST2 and the drain electrode of row gate tube SEL0/SEL1, and said power supply provides operating voltage through said power supply row connecting line VDD to reading circuit.But the present invention does not limit this; In other embodiments; Said power supply row connecting line VDD can also only link to each other with the drain electrode of row gate tube SEL0/SEL1; Said imageing sensor also comprises control signal row connecting line, links to each other with the drain electrode of said reset transistor RST1/RST2, and power supply provides operating voltage via said control signal row connecting line to said reset transistor.
In addition, in the present embodiment, signal train connecting line PXD links to each other with the source electrode of source follower SF0/SF1, the shared signal train connecting line PXD of the source follower SF0/SF1 of a pixel cell.The operation principle of present embodiment imageing sensor is identical with the operation principle of first embodiment, repeats no more at this.
Need to prove; In the above-described embodiments; Reset transistor, transfer tube, source follower and row gate tube are the NMOS pipe, but the present invention does not limit this, in other embodiments; Reset transistor, transfer tube, source follower and row gate tube can also be the PMOS pipes, and those skilled in the art can correspondingly revise, be out of shape and replace the present invention according to the foregoing description.
Correspondingly, the present invention also provides a kind of driving method of imageing sensor, with reference to figure 6, shows the schematic flow sheet of imageing sensor driving method one execution mode of the present invention.The driving method of said imageing sensor roughly may further comprise the steps:
Step S1 closes transfer tube, makes photodiode receive light, to produce photogenerated charge;
Step S2 provides the reset transistor Continuity signal, makes each reset transistor conducting, so that the floating diffusion region of each photosensitive unit is in reset mode, forms floating diffusion region first voltage, closes reset transistor then;
Step S3, the capable gate tube to each row reading circuit of pixel cell provides capable gate tube Continuity signal successively, with export each row photosensitive unit successively with the corresponding reset signal of said floating diffusion region first voltage;
Step S4, the conducting transfer tube so that the photogenerated charge in the photodiode is transferred to floating diffusion region, forms floating diffusion region second voltage, closes transfer tube then;
Step S5, the capable gate tube to each row reading circuit of pixel cell provides Continuity signal successively, with export each row photosensitive unit successively with the corresponding output signal of said floating diffusion region second voltage.
The driving method of imageing sensor of the present invention is described in detail in the above-mentioned operation principle of introducing imageing sensor, repeats no more at this.
Though the present invention with preferred embodiment openly as above; But it is not to be used to limit the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (10)
1. an imageing sensor is characterized in that, comprising:
A plurality of pixel cells, said pixel cell comprise a plurality of photosensitive unit that ranks arrange and reading circuits that link to each other with photosensitive unit of being;
Said photosensitive unit comprises photodiode and transfer tube;
Said reading circuit comprises reset transistor, source follower and row gate tube;
Be positioned at the shared reading circuit of photosensitive unit of same row in pixel cell;
Said imageing sensor also comprises the capable connecting line of the transfer tube that links to each other with said transfer tube, is used to load the transfer tube Continuity signal, with the capable connecting line of the shared transfer tube of the transfer tube of delegation;
Said imageing sensor also comprises:
The power supply row connecting line that links to each other with said reading circuit is used for to said reading circuit operating voltage being provided;
The signal train connecting line that links to each other with said reading circuit is used to export signal;
With the capable connecting line of capable gate tube that the grid of the capable gate tube of said reading circuit links to each other, be used for to row gate tube load rows gate tube Continuity signal;
Reset transistor row connecting line with the grid of the reset transistor of said reading circuit links to each other is used for to reset transistor loading reset pipe Continuity signal;
The shared signal train connecting line of each reading circuit in pixel cell;
The capable connecting line of capable gate tube in pixel cell is used for timesharing load rows gate tube Continuity signal, and each row gate tube of conducting makes each reading circuit timesharing output signal in the pixel cell successively.
2. imageing sensor as claimed in claim 1 is characterized in that, said power supply row connecting line links to each other with the drain electrode of reset transistor and the drain electrode of source follower.
3. imageing sensor as claimed in claim 1 is characterized in that, said power supply row connecting line links to each other with the drain electrode of source follower; Said imageing sensor also comprises control signal row connecting line, links to each other with the drain electrode of said reset transistor, is used for to said reset transistor operating voltage being provided.
4. like claim 2 or 3 described imageing sensors, it is characterized in that said signal train connecting line links to each other the shared signal train connecting line of the capable gate tube of a pixel cell with the source electrode of row gate tube.
5. imageing sensor as claimed in claim 1 is characterized in that, said power supply row connecting line links to each other with the drain electrode of reset transistor and the drain electrode of row gate tube.
6. imageing sensor as claimed in claim 1; It is characterized in that said power supply row connecting line links to each other with the drain electrode of row gate tube, said imageing sensor also comprises control signal row connecting line; Link to each other with the drain electrode of said reset transistor, be used for operating voltage being provided to said reset transistor.
7. like claim 5 or 6 described imageing sensors, it is characterized in that said signal train connecting line links to each other with the source electrode of said source follower, the shared signal train connecting line of the source follower of a pixel cell.
8. imageing sensor as claimed in claim 1 is characterized in that, the shared reset transistor row connecting line of the reset transistor in the same pixel cell.
9. imageing sensor as claimed in claim 1 is characterized in that, the transfer tube in the said imageing sensor, reset transistor, source follower and row gate tube are the NMOS pipe;
Said pixel cell comprises 8 photosensitive units, and said 8 photosensitive units are 4 row, 2 row and arrange;
Said pixel cell also comprises first reading circuit and second reading circuit, is respectively applied for 4 photosensitive units, 4 photosensitive units in the secondary series in first row in the pixel cell are carried out signal output;
Said imageing sensor also comprises 1 power supply row connecting line, 1 bars row connecting line, 4 capable connecting lines of transfer tube, 2 capable connecting lines of capable gate tube and 1 reset transistor row connecting line, wherein,
The drain electrode of the reset transistor in said power supply row connecting line and said first reading circuit and second reading circuit and the drain electrode of source follower all link to each other, and are used to provide operating voltage;
The source electrode of the capable gate tube in said signal train connecting line and said first reading circuit and second reading circuit all links to each other, and is used to export signal;
The grid of reset transistor all links to each other in said reset transistor row connecting line and first reading circuit and second reading circuit, is used for loading reset pipe Continuity signal;
Said 4 capable connecting lines of transfer tube link to each other with the grid of transfer tube in 4 row respectively, are used to load the transfer tube Continuity signal;
Said 2 capable connecting lines of capable gate tube, respectively with first reading circuit and second reading circuit in the grid of capable gate tube link to each other, be used for timesharing load rows gate tube Continuity signal, so that said signal train connecting line timesharing output signal.
10. the driving method of imageing sensor according to claim 1 is characterized in that, comprising:
Close transfer tube, make photodiode receive light, to produce photogenerated charge;
The reset transistor Continuity signal is provided, makes each reset transistor conducting,, form floating diffusion region first voltage, close reset transistor then so that the floating diffusion region of each photosensitive unit is in reset mode;
Capable gate tube to each row reading circuit of pixel cell provides capable gate tube Continuity signal successively, with export each row photosensitive unit successively with the corresponding reset signal of said floating diffusion region first voltage;
The conducting transfer tube so that the photogenerated charge in the photodiode is transferred to floating diffusion region, forms floating diffusion region second voltage, closes transfer tube then;
Capable gate tube to each row reading circuit of pixel cell provides Continuity signal successively, with export each row photosensitive unit successively with the corresponding output signal of said floating diffusion region second voltage.
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