CN103561218B - A kind of high luminous sensitivity CMOS image sensor pixel structure - Google Patents
A kind of high luminous sensitivity CMOS image sensor pixel structure Download PDFInfo
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- CN103561218B CN103561218B CN201310526660.9A CN201310526660A CN103561218B CN 103561218 B CN103561218 B CN 103561218B CN 201310526660 A CN201310526660 A CN 201310526660A CN 103561218 B CN103561218 B CN 103561218B
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Abstract
The invention discloses a kind of high luminous sensitivity CMOS image sensor pixel structure, including M pixel unit and control unit, each pixel unit includes photosensitive unit and reading circuit, and photosensitive unit includes photodiode and N number of transfer tube；Wherein, one in N number of transfer tube of each pixel unit is connected with the reading circuit of the pixel unit, and each of at least M-N+1 pixel unit, remaining N-1 transfer tube is connected with the reading circuit of other N-1 pixel unit respectively；Each of at least M-N+1 pixel unit, reading circuit is connected with N-1 transfer tube of a transfer tube of the pixel unit and other different pixels units, once to read the photogenerated signals of N number of pixel unit；Control unit controls M reading circuit according to particular order read output signal, so that the photogenerated signals of at least M-N+1 pixel unit are read out sequentially n times.The present invention can improve luminous sensitivity and signal-to-noise ratio under low light situation.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, in particular to a kind of high luminous sensitivity cmos image sensor pixel
Structure.
Background technique
Cmos image sensor has been widely used in mobile phone due to the optically and electrically performance that it constantly improves, digital
Camera, electron microscope etc., consumer electronics and scientific application occasion.Especially in the undesirable situation of illumination condition, still
It realizes the demand that high-definition image captures, is becoming the trend of these applications.Therefore, also have to high-performance image sensors
More urgent requirement, especially high luminous sensitivity and signal-to-noise ratio of the realization imaging sensor under low illumination.
In current cmos image sensor technology, has by the way of the reading noise for reducing reading circuit and improve figure
The signal-to-noise ratio of picture also has in the case where reading noise is constant, passes through the photosensitive area packing ratio for increasing dot structure, Lai Tigao
Luminous sensitivity.The former needs to compare reading circuit big adjustment, or needs to reduce pixel by changing manufacturing process
Source follower noise in structure, workload and cost are larger.The latter then passes through 2 or 4 pixel units share and read electricity
The structure on road improves packing ratio of the photosensitive area in dot structure on domain.This way needs to use at least two
Independent signal wire carrys out output optical signal, because shared reading circuit needs to export the signal on each pixel unit respectively,
Same reading circuit is also required to be used repeatedly, increases complexity.The increased amplitude of charge quantity of light is also not very big simultaneously.
Summary of the invention
The main purpose of the present invention is to provide one kind can holding circuit read noise it is constant in the case where make it is each
Optical charge on a pixel unit substantially doubles, the high-resolution cmos image sensor pixel knot of Lai Shixian bloom sensitivity
Structure.
To reach above-mentioned purpose, the present invention provides a kind of high luminous sensitivity CMOS image sensor pixel structure, comprising: M
A pixel unit and control unit, each pixel unit include photosensitive unit and reading circuit, the photosensitive unit packet
Include photodiode and N number of transfer tube；The reading circuit includes suspension node, reset transistor, source follower and row gate tube；Its
In, one in N number of transfer tube of each pixel unit is connected with the reading circuit of the pixel unit, and at least M-N+1
Each of a described pixel unit, remaining N-1 readings with other N-1 pixel unit respectively of N number of transfer tube
Circuit is connected out；One transmission of each of at least M-N+1 described pixel units, reading circuit and the pixel unit
N-1 transfer tube of pipe and other different pixels units is connected, and the photoproduction once to read N number of pixel unit is believed
Number；Described control unit controls the M reading circuits according to particular order read output signal, so that at least M-N+1 pixel
The photogenerated signals of unit are by reading n times, and wherein N is the positive integer greater than 1, and M is the positive integer more than or equal to N.
Optionally, the transfer tube is opened or closed according to the signal that described control unit issues, so that the M pixel
When one of them reading circuit of unit reads signal, the connected transfer tube of the reading circuit is simultaneously turned on, and remaining institute
State transfer tube cut-off.
Optionally, in the M-N+1 pixel unit, one in N number of transfer tube of k-th of pixel unit with should
The reading circuit of pixel unit is connected, remaining N-1 transfer tube respectively with kth -1, kth -2 ..., a pixels of kth-N+1
The reading circuit of unit is connected, and wherein k is less than or equal to M and more than or equal to the integer of N.
Optionally, the reading circuit phase of one in N number of transfer tube of each pixel unit and the pixel unit
Even, remaining N-1 transfer tube is connected with the reading circuit of other N-1 pixel unit respectively；Each pixel unit
Reading circuit is connected with N-1 transfer tube of a transfer tube of the pixel unit and other different pixels units；The control
M reading circuits of unit control processed are according to particular order read output signal, so that the photogenerated signals of each pixel unit are equal
It is read out sequentially n times.
Optionally, the reading circuit phase of one in N number of transfer tube of i-th of pixel unit and the pixel unit
Even, remaining N-1 transfer tube respectively with (i-1)-th, the i-th -2 ..., the reading circuit of the i-th-N+1 pixel unit is connected,
Middle i is less than or equal to M and more than or equal to the integer of N；One in N number of transfer tube of j-th of pixel unit and the pixel
The reading circuit of unit is connected, remaining N-1 transfer tube respectively with jth -1, the reading of jth -2 ... ... the 1st pixel units
Circuit and m-th out, M-1 ..., the reading circuit of M- (N-j)+1 pixel unit is connected, and wherein j is less than N's
Positive integer.
Optionally, M is the integral multiple of N.
Optionally, the reading circuit of the M pixel unit is divided into N group, and each group has M/N reading circuit, for
Its connected transfer tube of same group of the reading circuit and corresponding pixel unit are entirely different, and the particular order is
The N group reading circuit is set to be successively read signal n times, and each group of the reading circuit is successively read the M pixel list
The photogenerated signals of member.
Optionally, M/N reading circuit in reading circuit described in same group is respectively the reading electricity of p-th of pixel unit
Road, pth+N number of pixel unit reading circuit ... ..., the reading circuit of the N number of pixel unit of p+ (M/N-1) *, wherein p be greater than
It is less than or equal to the positive integer of N equal to 1.
Optionally, the integral multiple that N is 4.
The beneficial effect of CMOS image sensor pixel structure of the invention is that it is possible to maintaining high-resolution and do not increasing
Add in the case where reading noise, by increasing substantially cmos image sensor under low light situation signal enhancing several times
Luminous sensitivity and signal-to-noise ratio.
Detailed description of the invention
Fig. 1 is the schematic diagram of the cmos image sensor pixel unit of one embodiment of the invention.
Fig. 2 is the schematic diagram of the CMOS image sensor pixel structure of one embodiment of the invention.
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.In addition, the present invention has carried out detailed statement using schematic diagram, it is real the present invention is described in detail
When example, for ease of description, schematic diagram is not partially enlarged in proportion to the general scale, should not be in this, as limitation of the invention.
The present invention provides a kind of high luminous sensitivity CMOS image sensor pixel structures comprising M pixel unit and
Control unit, each pixel unit include a photosensitive unit and a reading circuit, and wherein photosensitive unit includes photoelectricity two
Pole pipe and N number of transfer tube；Reading circuit includes suspension node, reset transistor, source follower and row gate tube.Wherein, each picture
One in N number of transfer tube of plain unit is connected with the reading circuit of the pixel unit, and at least M-N+1 pixel unit is every
One, one in N number of transfer tube is connected with the reading circuit of the pixel unit, remaining N-1 respectively with other N-1
The reading circuit of pixel unit is connected.Further, each of at least M-N+1 pixel unit, reading circuit and the picture
One of transfer tube of plain unit and N-1 transfer tube of other different pixels units are connected, once to read N number of picture
The photogenerated signals of plain unit, therefore N times of signal enhancing read-out by least M-N+1 reading circuit.In addition, control unit control
M reading circuit processed is according to particular order read output signal, so that the photogenerated signals of at least M-N+1 pixel unit are read out sequentially
N times, thus entire readout can still keep the high-resolution of image.Wherein N is positive integer greater than 1, M be more than or equal to
The positive integer of N.
A preferred embodiment of the invention is illustrated below with reference to Fig. 1 and Fig. 2.
Referring to Figure 1, each pixel unit includes a photosensitive unit and a reading circuit, wherein reading circuit packet
Include 1 suspension node (Floating Diffusion Node), 1 reset transistor (Reset), 1 source follower (Source
) and 1 row gate tube (Row Selector) Follower；Photosensitive unit includes photodiode, such as pinned photodiode
The transfer tube of P1 and N number of control charge transmission.In the present embodiment, photodiode P1 can by 4 transfer tubes (TX_1_1,
TX_1_2, TX_1_3, TX_1_4) control charge be transmitted to 4 different reading circuit structures.One of transfer tube TX_1_2
Connect the source follower grid of the reading circuit of photodiode P1 and the corresponding pixel unit, excess-three TX_1_1, TX_1_
3, TX_1_4 can be connected on the source follower grid of the reading circuit of other pixel units, so that the multiple of optical charge can be realized
It reads.In addition, reading circuit corresponding to photodiode P1 also connects other 3 other than connecting transfer tube TX_1_2
The transfer tube of different pixels unit.
Refer to Fig. 2 which shows the schematic diagram of the CMOS image sensor pixel structure of a preferred embodiment of the present invention,
The readout of pixel unit signal multiplication can be achieved.CMOS image sensor pixel structure includes 16 pixel units, each
The number of transfer tube is 4 in pixel unit, and the grid of control signal to transfer tube can be directly issued by control unit (not shown)
Pole is to control its on or off.Reading circuit is by S1, S2, S3, S4 ..., and S14, S15, S16, which simplifies, to be indicated, photodiode
By P1, P2, P3, P4 ..., P14, P15, P16, which simplifies, to be indicated.Transfer tube is indicated by TX, wherein as in third pixel unit
3rd transfer tube is indicated by TX_3_3, and so on.
In the present embodiment, a reading electricity corresponding with its own in 4 transfer tubes of at least 13 pixel units
Road is connected, remaining 3 transfer tube with and the adjacent pixel unit of the pixel unit corresponding to reading circuit it is connected.It is specific next
It says, 4 transfer tubes of the 16th pixel unit are connected with reading circuit S16, S15, S14 with S13 respectively, the 15th pixel unit
4 transfer tubes be connected respectively with reading circuit S15, S14, S13 with S12, and so on, 4 transmission of the 4th pixel unit
Pipe is connected with reading circuit S4, S3, S2 with S1 respectively.And the 3rd pixel unit then passes through 3 transfer tubes respectively and reading circuit
S3, S2 and S1 are connected；2nd pixel unit then passes through 2 transfer tubes and is connected respectively with reading circuit S2 with S1；1st pixel
Unit is then only connected by 1 transfer tube reading circuit S1 corresponding with its.Therefore, this 13 light of photodiode P4~P16
Signal stored by electric diode can be read by four reading circuits, so that the signal that ought successively carry out each reading circuit is read
When, the signal of these pixel units can also be read 4 times.
On the other hand, in above-mentioned connection type, reading circuit S1~S13 with include its own corresponding pixel unit and with
Other adjacent 3 different pixel units of the pixel are connected, therefore by the opening and closing of control transfer tube, may make reading
Circuit S1 reads simultaneously photodiode P1, P2, P3, the merging signal of P4 out, and reading circuit S2 reads simultaneously photodiode
The merging signal ... ... of P2, P3, P4, P5, reading circuit S13 read simultaneously photodiode P13, P14, P15, the merging of P16
Signal.In this way, which each reading circuit once has read the charge in 4 adjacent pixel units in S1~S13, realize
4 times of signal enhancings.
It will be detailed below the signal readout of the present embodiment.
In the present embodiment, the reading circuit of 16 pixel units is divided into 4 groups, and each group includes 4 reading circuits, for
Pixel unit corresponding to its connected transfer tube of same group of reading circuit is entirely different, and 4 groups of reading circuits are connected
Transfer tube and corresponding pixel unit are also all different.When carrying out signal reading, 4 groups of reading circuits are successively read signal, and
Each group of 4 reading circuits are successively read signal, in this way, at least each of 13 pixel units pixel unit,
Its photogenerated signals can be sequential read out by 4 groups of reading circuits respectively, to realize that signal is read 4 times.Specifically, the present embodiment
In first group include reading circuit S1, S5, S9 and S13；Second group includes reading circuit S2, S6, S10 and S14；Third group includes
Reading circuit S3, S7, S11 and S15；4th group includes reading circuit S4, S8, S12 and S16.
The readout of one reading circuit is described first, with 4 light of reading circuit (such as S1) readable signal
Electric diode is a unit (such as photodiode P1, P2, P3, P4), opens simultaneously this corresponding 4 photodiodes and connection
To 4 transfer tubes (such as TX_1_1, TX_2_1, TX_3_1, TX_4_1) of the reading circuit, followed by the source of reading circuit S1
Device reads all optical charges.
It is described below the readout of entire dot structure.
In first time readout, by open simultaneously every time signal-obtaining to be carried out reading circuit its connected 4
A transfer tube first passes through S1 reading and is stored in P1, P2, P3, the optical charge on P4, then is stored in P5, P6, P7 by S5 reading,
Optical charge on P8 is then stored in P9, P10, P11 by S9 reading, the optical charge on P12, then is stored in by S13 reading
Optical charge on P13, P14, P15, P16, all optical charges have been read once in such 16 pixel units.This is for the first time
Readout, can be briefly described with following mathematic(al) representation are as follows:
S1=P1 (TX_1_1)+P2 (TX_2_1)+P3 (TX_3_1)+P4 (TX_4_1)
S5=P5 (TX_5_4)+P6 (TX_6_3)+P7 (TX_7_2)+P8 (TX_8_1)
S9=P9 (TX_9_4)+P10 (TX_10_3)+P11 (TX_11_2)+P12 (TX_12_1)
S13=P13 (TX_13_4)+P14 (TX_14_3)+P15 (TX_15_2)+P16 (TX_16_1)
Content representation in bracket transmits charge by opening simultaneously which transfer tube.
If in a manner of opening on each photodiode transfer tube one by one, and passing sequentially through S1, S2,
S3, S4 ... ..., S13, S14, time needed for the source follower of S15, S16 read entire dot structure are set as a frame time t,
It is so the time that a unit reads entire dot structure with 4 pixel units is now then 1/4 frame time.And above-mentioned reading
During out, once enhanced by the quantity of electric charge of each reading circuit.
In secondary readout, latter 3 adjacent pixel unit meetings having been used in first time readout
Be reused, and with a pixel unit behind, the reading list of recomposition one continuous 4 adjacent pixel unit
Position.With under identical smooth input condition for the first time, still read with the pixel unit of 4 adjacent continuous for a unit, again
Second of readout is completed within the time of 1/4 frame.
As shown in Figure 2, by opening simultaneously 4 corresponding transfer tubes, P2, P3, P4, P5 are stored in by S2 reading
On optical charge, by S6 reading be stored in P6, P7, P8, the optical charge on P9, by S10 reading be stored in P10, P11,
Optical charge on P12, P13 is then read by S14 and is stored in P14, the optical charge on P15, P16, it is also possible to following expression table
It is shown as:
S2=P2 (TX_2_2)+P3 (TX_3_2)+P4 (TX_4_2)+P5 (TX_5_1)
S6=P6 (TX_6_4)+P7 (TX_7_3)+P8 (TX_8_2)+P9 (TX_9_1)
S10=P10 (TX_10_4)+P11 (TX_11_3)+P12 (TX_12_2)+P13 (TX_13_1)
S14=P14 (TX_14_4)+P15 (TX_15_3)+P16 (TX_16_2)
At this point, this 15 pixel units of P2~P16 pass through two groups of reading circuits and are read twice.
And so on, in third time readout, latter 2 adjacent pixel unit meetings used in reading for the first time
Be used to again, and with 2 pixel units behind, the reading unit of recomposition one continuous 4 adjacent pixel unit.
As shown in Figure 2, by opening simultaneously 4 corresponding transfer tubes, P3, P4, P5 are stored in by S3 reading, the photoelectricity on P6
Lotus is stored in P7, P8, P9 by S7 reading, and the optical charge on P10 is read by S11 and is stored in P11, P12, P13, on P14
Optical charge, then read by S15 and be stored in P15, the optical charge on P16, it is also possible to following expression indicate are as follows:
S3=P3 (TX_3_3)+P4 (TX_4_3)+P5 (TX_5_2)+P6 (TX_6_1)
S7=P7 (TX_7_4)+P8 (TX_8_3)+P9 (TX_9_2)+P10 (TX_10_1)
S11=P11 (TX_11_4)+P12 (TX_12_3)+P13 (TX_13_2)+P14 (TX_14_1)
S15=P15 (TX_15_4)+P16 (TX_16_3)
At this point, this 14 pixel units of P3~P16 pass through three groups of reading circuits and are read three times.
In last time readout, last 1 pixel unit used in reading can be reused for the first time
Arrive, and with 3 pixel units behind, form continuous 4 adjacent pixel unit reading unit.Such as institute in Fig. 2
Show, by opening simultaneously 4 corresponding transfer tubes, first passes through S4 reading and be stored in P4, P5, P6, the optical charge on P7 passes through
S8 reading is stored in P8, P9, P10, and the optical charge on P11 is stored in P12, P13, P14 by S12 reading, the photoelectricity on P15
Lotus then only reads the charge on P16 by S16, it is also possible to which following expression indicates are as follows:
S4=P4 (TX_4_4)+P5 (TX_5_3)+P6 (TX_6_2)+P7 (TX_7_1)
S8=P8 (TX_8_4)+P9 (TX_9_3)+P10 (TX_10_2)+P11 (TX_11_1)
S12=P12 (TX_12_4)+P13 (TX_13_3)+P14 (TX_14_2)+P15 (TX_15_1)
S16=P16 (TX_16_4)
It is read 4 times at this point, this 13 pixel units of P4~P16 pass through four groups of reading circuits.
Since reading circuit S1~S13 signal read every time is the total electrical charge in 4 photodiodes, signal strength because
This increases by 4 times, and the signal that can only choose reading circuit S1~S13 reading later carries out subsequent processing, to guarantee handled figure
As signal has high luminous sensitivity and high-resolution.
It should be noted that in the present embodiment, there are 3 pixel unit its transfer tubes not use all, wherein the 3rd
1 transfer tube (TX_3_4) of a pixel unit, 2 transfer tubes (TX_2_3, TX_2_4) of the 2nd pixel unit, the 1st picture
3 transfer tubes (TX_1_2, TX_1_3, TX_1_4) of plain unit are not connected with other reading circuits.However preferably implement one
In example, the 3rd pixel unit can be connected by transfer tube TX_3_4 with reading circuit S16；2nd pixel unit can pass through transmission
It manages (TX_2_3, TX_2_4) and reading circuit S15, S16 is connected；1st pixel unit can then pass through transfer tube (TX_1_2, TX_
1_3, TX_1_4) it is connected respectively with reading circuit S14, S15 with S16.In this way, lead to when carrying out second of readout
It crosses S14 reading and is stored in P14, P15, the optical charge on P16 and P1；In third time readout, it is stored in by S15 reading
Optical charge on P15, P16, P1, P2；It in last time readout, is read by S16 and is stored in P16, P1, P2, on P3
Optical charge.In this way, being total in 4 photodiodes by signal read-out by the source follower in each reading circuit
Charge, and likewise, the signal of each pixel unit has also been read 4 times, signal has been replicated 4 parts, so as to direct
Reading circuit S1~S16 signal read is handled.
Relative to S1, S2, S3 ..., S14, S15 is gradually passed through, S16 reads the charge on its corresponding photodiode
Method, each reading circuit is also only used once in the present invention, and reading noise does not increase, and each reading circuit can be with one
The secondary charge read on 4 photodiodes, signal-to-noise ratio are improved, and technical effect can pass through the following derivation of equation.
Wherein, SNR represents signal-to-noise ratio, and S represents optical signal caused by each photodiode, nSOptical signal is represented to make an uproar
Sound, nrRepresent reading circuit noise.
From the above equation, we can see that reading the mode of each photodiode signal on entire pixel array one by one relatively, utilize
The signal-to-noise ratio of image sensor pixel structure read output signal of the invention improves 12dB.
Meanwhile by 4 readouts as described above, the signal of each pixel unit can be read 4 times, identical
Light intensity and time for exposure under, by 4 times read after image in each pixel unit on optical signal also by multiple on an equal basis
4 times are enhanced after 4 parts of system.Likewise, image can also maintain high-resolution, it will not be because of 4 image pixels of first use
Unit reads and is lost.
Further, each pixel unit uses 4 transfer tubes in the present embodiment, and with every 4 pixel units for one
A unit is read in a reading circuit, is also beneficial in laying out pattern, the symmetry of photodiode and transfer tube arrangement.
Meanwhile with the several pixel units of 4 multiple be one reading unit structure (the present embodiment is for 4), also be conducive to Bayer optical filtering
The arrangement of piece, is conducive to subsequent image procossing and color image is shot.
It should be noted that the arrangement of dot structure shown in Fig. 2 and connection type are only one embodiment of the invention, it is real
On border in other embodiments, the number M of pixel unit is more than or equal to transfer tube number N in each pixel unit, but not
It is limited to integral multiple (such as M=N for N2), and the signal that it reads for a reading circuit is in addition to corresponding pixel
Outside the signal of unit, other N-1 signal is not limited to the signal of the pixel unit adjacent with the respective pixel unit, namely
It is to say, the connection relationship of the transfer tube of each pixel unit and reading circuit is depending on actual needs, it is only necessary to meet pixel
At least M-N+1 pixel unit in structure, N number of transfer tube of each of which pixel unit respectively with the reading of the pixel unit
The reading circuit of circuit and other N-1 pixel unit is connected, and the reading circuit of each pixel unit and the pixel list
One transfer tube of member and N-1 transfer tube of other different pixels units are connected, and this M-N when the completion of all readouts
The photogenerated signals of+1 pixel unit are by reading n times.
In conclusion high luminous sensitivity CMOS image sensor pixel structure through the invention, makes an uproar not increasing reading
In the case where sound, it can will pass through the signal multiplication on each reading circuit, signal-to-noise ratio of the Lai Tigao under low light situation.This
Outside, under each identical illumination condition, by repeatedly exporting the signal on same pixel unit, image can also remain high
Resolution ratio.Therefore, cmos image sensor can be increased substantially under low light situation using technical solution of the present invention
Luminous sensitivity and signal-to-noise ratio can be widely applied for high-resolution, the consumer digital camera and cell-phone camera of high luminous sensitivity
Head.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, it is not intended to limit the invention, those skilled in the art can make without departing from the spirit and scope of the present invention
Several changes and retouches, and the protection scope that the present invention is advocated should be subject to described in claims.
Claims (9)
1. a kind of high luminous sensitivity CMOS image sensor pixel structure characterized by comprising
M pixel unit and control unit, each pixel unit include photosensitive unit and reading circuit, the photosensitive list
Member includes photodiode and N number of transfer tube；The reading circuit includes suspension node, reset transistor, source follower and row gating
Pipe；Wherein,
One in N number of transfer tube of each pixel unit is connected with the reading circuit of the pixel unit, and at least M-N+1
Each of a described pixel unit, remaining N-1 readings with other N-1 pixel unit respectively of N number of transfer tube
Circuit is connected out；
One transfer tube of each of at least M-N+1 described pixel unit, reading circuit and the pixel unit and
N-1 transfer tube of other different pixels units is connected, once to read the photogenerated signals of N number of pixel unit；
Described control unit controls the M reading circuits according to particular order read output signal, so that at least M-N+1 pixel
The photogenerated signals of unit are by reading n times, and wherein N is the positive integer greater than 1, and M is the positive integer more than or equal to N.
2. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 1, which is characterized in that described
Transfer tube is opened or closed according to the signal that described control unit issues, so that one of them reading of the M pixel unit
When circuit reads signal, the connected transfer tube of the reading circuit is simultaneously turned on, and remaining described transfer tube cut-off.
3. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 1, which is characterized in that
In the M-N+1 pixel unit, one in N number of transfer tube of k-th of pixel unit with the pixel unit
Reading circuit be connected, remaining N-1 transfer tube respectively with kth -1, kth -2 ..., the reading of kth-(N-1) a pixel unit
Circuit is connected out, and wherein k is less than or equal to M and more than or equal to the integer of N.
4. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 1, which is characterized in that each
One in N number of transfer tube of a pixel unit is connected with the reading circuit of the pixel unit, remaining N-1 transfer tube point
It is not connected with the reading circuit of other N-1 pixel unit；The reading circuit of each pixel unit and the pixel unit
A transfer tube and other different pixels units N-1 transfer tube be connected；Described control unit controls the M readings
Circuit is according to particular order read output signal, so that the photogenerated signals of each pixel unit are read out sequentially n times.
5. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 4, which is characterized in that
One in N number of transfer tube of i-th of pixel unit is connected with the reading circuit of the pixel unit, and remaining N-1
Transfer tube respectively with (i-1)-th, the i-th -2 ..., the reading circuit of the i-th-N+1 pixel unit is connected, wherein i be less than etc.
In M and more than or equal to the integer of N；
One in N number of transfer tube of j-th of pixel unit is connected with the reading circuit of the pixel unit, and remaining N-1
Transfer tube respectively with jth -1, the reading circuit and m-th of jth -2 ... ... the 1st pixel units, M-1 ...,
The reading circuit of M- (N-j)+1 pixel unit is connected, and wherein j is the positive integer less than N.
6. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 3 or 5, which is characterized in that M
For the integral multiple of N.
7. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 6, which is characterized in that described
The reading circuit of M pixel unit is divided into N group, and each group has M/N reading circuit, for same group of the reading circuit
Its connected transfer tube and corresponding pixel unit are entirely different, the particular order be make the N group reading circuit according to
Secondary reading signal n times, and each group of the reading circuit is successively read the photogenerated signals of the M pixel unit.
8. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 7, which is characterized in that same
M/N reading circuit in the group reading circuit is respectively the reading circuit of p-th of pixel unit, pth+N number of pixel unit
Reading circuit ... ..., pth+(M/N-1) * N number of pixel unit reading circuit, wherein p is more than or equal to 1 less than or equal to N
Positive integer.
9. a kind of high luminous sensitivity CMOS image sensor pixel structure according to claim 7, which is characterized in that N 4
Integral multiple.
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