CN102693795A - Negative temperature coefficient thermistor - Google Patents
Negative temperature coefficient thermistor Download PDFInfo
- Publication number
- CN102693795A CN102693795A CN2012101816427A CN201210181642A CN102693795A CN 102693795 A CN102693795 A CN 102693795A CN 2012101816427 A CN2012101816427 A CN 2012101816427A CN 201210181642 A CN201210181642 A CN 201210181642A CN 102693795 A CN102693795 A CN 102693795A
- Authority
- CN
- China
- Prior art keywords
- metal oxide
- coefficient thermistor
- thermistor
- temperature coefficient
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 32
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000002270 dispersing agent Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 abstract 1
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 abstract 1
- PZFKDUMHDHEBLD-UHFFFAOYSA-N oxo(oxonickeliooxy)nickel Chemical compound O=[Ni]O[Ni]=O PZFKDUMHDHEBLD-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a negative temperature coefficient thermistor and a manufacturing method thereof. The thermistor is manufactured by mainly mixing a metal oxide and a solvent, wherein the metal oxide comprises the following components in percentage by weight: 10 to 30 percent of Mn2O3, 40 to 65 percent of Ni2O3, 10 to 25 percent of Fe2O3, 10 to 30 percent of CuO, 0.5 to 2.5 percent of Al2O3 and 1 to 5 percent of MgO. The negative temperature coefficient thermistor and the manufacturing method thereof have the advantages that the negative temperature coefficient thermistor has high linearity, and can be conveniently applied to the temperature measurement industry; due to the adoption of the formula of the metal oxide, the combination of high resistivity and a low B value can be obtained, namely a material constant B is 2,800 to 2,900K when resistivity rho is 10 to 20 (kOhm.mm); the negative temperature coefficient thermistor can be used for a wide temperature range, namely the negative temperature coefficient thermistor can be used at high temperature and low temperature; and the negative temperature coefficient thermistor can be used for a special customer, and the series-connection of a resistor is avoided when the resistivity is low and a signal is weak in a high-temperature section.
Description
Technical field
The present invention relates to a kind of thermistor, is the low B value negative temperature coefficient thermistor of a kind of high value specifically.
Background technology
NTC (the abbreviation of Negative Temperature Coefficient at present; The meaning is the temperature coefficient of bearing) thermistor adopts existing prescription and technology can only accomplish low resistance, low B value; Even the B value is accomplished 2800K ~ 2900K, and resistivity can only be accomplished 0.05～0.2 (k Ω .mm); And the formula combination that is difficult to realize high value, hangs down the B value, high value, low B value are that the B value is accomplished 2800～2900K, resistivity can be accomplished 10～20 (k Ω .mm); Low-resistance is hanged down B, less because of resistance, can't use simultaneously in low, high temperature section, and resistance is very little during because of high temperature, because of the NTC characteristic is to diminish with temperature rising resistance, otherwise then becomes big.When high temperature uses signal a little less than, can't satisfy the requirement of particular client.
Summary of the invention
Goal of the invention:, the purpose of this invention is to provide a kind of linearity low B value negative temperature coefficient thermistor of high value better, that can in wide temperature range, use and manufacturing approach thereof in order to overcome the deficiency of prior art.The electricalresistivity of this thermistor is 10～20 (k Ω .mm), and material constant B is 2800～2900K.
Technical scheme: in order to solve the problems of the technologies described above; The technical scheme that the present invention adopted is: a kind of high value is hanged down B value negative temperature coefficient thermistor; Mainly processed by metal oxide and solvent, said metal oxide comprises following component in percentage by weight: Mn
2O
310% ~ 30%, Ni
2O
340% ~ 65%, Fe
2O
310% ~ 25%, CuO 10% ~ 30%, Al
2O
30.5% ~ 2.5%, MgO 1% ~ 5%.
Adopt said ratio, make the B value of said thermistor accomplish 2800～2900K, resistivity can be accomplished 10～20 (k Ω .mm) simultaneously.
The manufacturing approach of above-mentioned negative tempperature coefficient thermistor, this method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight; Add ethanol, adhesive, dispersant then and be made into slurry, wherein metal oxide: ethanol: adhesive: the weight ratio=1:0.3 of dispersant～0.5:0.5～0.7:0.05～0.1;
2) flow casting molding; The slurry that configures is placed vacuum tank; Adopt conduit that slurry is absorbed water on the carrier film, thickness is the film of 20～70 μ m, then annular transmit and through baking oven with 30～60 ℃ of each layers of oven dry; Circulation is made to the number of plies and the thickness of design, and oven dry is after separation, cutting, binder removal, sintering get ceramics;
3) system electrode is with the ceramics coated on both sides silver electrode that sinters;
4) scribing is divided into required size according to the resistance demand; Promptly obtaining said electricalresistivity is 10～20 (k Ω .mm), and material constant B is the thermistor of 2800～2900K.
Said adhesive is an electronic ceramic vinyl modified adhesive.Preferred adhesive CK24 among the present invention.
Beneficial effect: compared with prior art, advantage of the present invention is: 1) it is better linear, easily is applied in the thermometric industry; 2) metal oxide adopts this prescription can accomplish the formula combination of high value, low B value: the electricalresistivity is 10～20 (k Ω .mm), and material constant B is 2800～2900K; 3) can in wide temperature range, use, can when high and low temperature, use simultaneously; 4) can satisfy particular client and use, in order to avoid need series resistance than small-signal a little less than because of resistance in high temperature section.
Embodiment
Below in conjunction with embodiment the present invention is done further detailed description.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also make some improvement, these improvement also should be regarded as protection scope of the present invention.
Embodiment 1: a kind of high value is hanged down B value negative temperature coefficient thermistor, is mainly processed by metal oxide and solvent, and said metal oxide comprises following component in percentage by weight: Mn
2O
320%, Ni
2O
350%, Fe
2O
310%, CuO 15%, Al
2O
31.5%, MgO 3.5%.
The manufacturing approach of the low B value negative temperature coefficient thermistor of above-mentioned high value, this method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight; Add ethanol, adhesive C K24, dispersant then and be made into slurry, wherein metal oxide: ethanol: adhesive: the weight ratio=1:0.35:0.57:0.06 of dispersant; Adhesive C K24 is the commercially available prod; CK24 is a kind of electronic ceramic vinyl modified adhesive; It is the dispersant of BYK110 that dispersant adopts model.
2) flow casting molding; The slurry that configures is placed vacuum tank; Adopt conduit that slurry is absorbed water on the carrier film, thickness is the film of 20～70 μ m, then annular transmit and through baking oven with 30～60 ℃ of each layers of oven dry; Circulation is made to the number of plies and the thickness of design, and oven dry is after separation, cutting, binder removal, sintering get ceramics;
3) system electrode is with the ceramics coated on both sides silver electrode that sinters;
4) scribing is divided into required size according to the resistance demand; Promptly obtain the low B value negative temperature coefficient thermistor of above-mentioned high value.
Through detecting, the material constant B of this thermistor is 2800～2900K, and the electricalresistivity is 10～20 (k Ω .mm).
Detect: resistivity algorithms: ρ=RS/T
In the formula: the resistance that R:NTC chip (measuring accuracy+/ 0.02 ℃) under 25 ℃ of temperature records
S:NTC area of chip: long * wide
The thickness of T:NTC chip
B value-based algorithm: B=(T1*T2/ (T2-T1)) * ㏑ (R1/R2)
T1/T2 is generally 25/85, and perhaps 25/50, perhaps 25/100.
Resistance value during R1=temperature T 1
Resistance value during R2=temperature T 2
T1=298.15K(273.15+25℃)
T2=323.15K(273.15+50℃)
Can in wide temperature range, use, can when high and low temperature, use the serviceability temperature scope simultaneously :-60～200 ℃.
Embodiment 2: basic identical with embodiment 1, different is the proportioning of composition, metal oxide and the solvent of metal oxide, specific as follows: metal oxide comprises following component in percentage by weight: Mn
2O
310%, Ni
2O
365%, Fe
2O
310%, CuO 10%, Al
2O
30.5%, MgO 4.5%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.3:0.5:0.05 of dispersant.
Through detecting, the material constant B of this thermistor is 2800～2900K, and the electricalresistivity is 10～20 (k Ω .mm).
Embodiment 3: basic identical with embodiment 1, the composition of different is metal oxide and metal oxide and
The proportioning of solvent, specific as follows: metal oxide comprises following component in percentage by weight: Mn
2O
330%, Ni
2O
340%, Fe
2O
315%, CuO 12%, Al
2O
32%, MgO 1%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.4:0.5:0.07 of dispersant.
Through detecting, the material constant B of this thermistor is 2800～2900K, and the electricalresistivity is 10～20 (k Ω .mm).
Embodiment 4: basic identical with embodiment 1, different is the proportioning of composition and the metal oxide and the solvent of metal oxide, and specific as follows: metal oxide comprises following component in percentage by weight: Mn
2O
319%, Ni
2O
340%, Fe
2O
325%, CuO 11%, Al
2O
32.5%, MgO 2.5%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.5:0.7:0.1 of dispersant.
Through detecting, the material constant B of this thermistor is 2800～2900K, and the electricalresistivity is 10～20 (k Ω .mm).
Embodiment 5: basic identical with embodiment 1, different is the proportioning of composition and the metal oxide and the solvent of metal oxide, and specific as follows: metal oxide comprises following component in percentage by weight: Mn
2O
310%, Ni
2O
343%, Fe
2O
310%, CuO 30%, Al
2O
32%, MgO 5%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.3:0.6:0.08 of dispersant.
Through detecting, the material constant B of this thermistor is 2800～2900K, and the electricalresistivity is 10～20 (k Ω .mm).
Claims (4)
1. a negative tempperature coefficient thermistor is mainly processed by metal oxide and solvent, it is characterized in that, said metal oxide comprises following component in percentage by weight: Mn
2O
310% ~ 30%, Ni
2O
340% ~ 65%, Fe
2O
310% ~ 25%, CuO 10% ~ 30%, Al
2O
30.5% ~ 2.5%, MgO 1% ~ 5%.
2. according to the said negative tempperature coefficient thermistor of claim 1, it is characterized in that the electricalresistivity of said thermistor is 10～12 (k Ω .mm), material constant B is 2800～2900K.
3. according to the manufacturing approach of the said negative tempperature coefficient thermistor of claim 1, it is characterized in that this method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight; Add ethanol, adhesive, dispersant then and be made into slurry, wherein metal oxide: ethanol: adhesive: the weight ratio=1:0.3 of dispersant～0.5:0.5～0.7:0.05～0.1;
2) flow casting molding; The slurry that configures is placed vacuum tank; Adopt conduit that slurry is absorbed water on the carrier film, thickness is the film of 20～70 μ m, then annular transmit and through baking oven with 30～60 ℃ of each layers of oven dry; Circulation is made to the number of plies and the thickness of design, and oven dry is after separation, cutting, binder removal, sintering get ceramics;
3) system electrode is with the ceramics coated on both sides silver electrode that sinters;
4) scribing is divided into required size according to the resistance demand; Promptly obtaining said electricalresistivity is 10～20 (k Ω .mm), and material constant B is the thermistor of 2800～2900K.
4. according to the manufacturing approach of the said negative tempperature coefficient thermistor of claim 3, it is characterized in that said adhesive is an electronic ceramic vinyl modified adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210181642.7A CN102693795B (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210181642.7A CN102693795B (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102693795A true CN102693795A (en) | 2012-09-26 |
| CN102693795B CN102693795B (en) | 2015-07-15 |
Family
ID=46859171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210181642.7A Expired - Fee Related CN102693795B (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient thermistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102693795B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106698528A (en) * | 2017-01-25 | 2017-05-24 | 中国科学院新疆理化技术研究所 | Composite oxide material with core-shell structure, and preparation method and application thereof |
| CN109133901A (en) * | 2018-10-29 | 2019-01-04 | 惠州嘉科实业有限公司 | Thermistor containing iron series and preparation method thereof |
| CN112811891A (en) * | 2020-12-26 | 2021-05-18 | 重庆材料研究院有限公司 | Spinel phase high-entropy thermistor material and preparation method thereof |
| CN113454736A (en) * | 2019-02-22 | 2021-09-28 | 三菱综合材料株式会社 | Method for manufacturing thermistor |
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| US5661094A (en) * | 1994-06-14 | 1997-08-26 | Siemens Matsushita Gmbh & Co. Kg | Sintered ceramic for high-stability thermistors and method for production thereof |
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2012
- 2012-06-04 CN CN201210181642.7A patent/CN102693795B/en not_active Expired - Fee Related
Patent Citations (4)
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| US5661094A (en) * | 1994-06-14 | 1997-08-26 | Siemens Matsushita Gmbh & Co. Kg | Sintered ceramic for high-stability thermistors and method for production thereof |
| CN1326198A (en) * | 2000-05-25 | 2001-12-12 | 列特龙株式会社 | Spinel ferrite thermal sensitive resistance component with negative temperature coefficient |
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Non-Patent Citations (1)
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|---|
| 沈波，翟继卫，妥万禄，武明堂: "热敏材料对NTC厚膜热敏电阻电学参数的影响", 《功能材料》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106698528A (en) * | 2017-01-25 | 2017-05-24 | 中国科学院新疆理化技术研究所 | Composite oxide material with core-shell structure, and preparation method and application thereof |
| CN109133901A (en) * | 2018-10-29 | 2019-01-04 | 惠州嘉科实业有限公司 | Thermistor containing iron series and preparation method thereof |
| CN113454736A (en) * | 2019-02-22 | 2021-09-28 | 三菱综合材料株式会社 | Method for manufacturing thermistor |
| CN113454736B (en) * | 2019-02-22 | 2023-02-17 | 三菱综合材料株式会社 | Method for manufacturing thermistor |
| US11763967B2 (en) | 2019-02-22 | 2023-09-19 | Mitsubishi Materials Corporation | Method of manufacturing thermistor |
| CN112811891A (en) * | 2020-12-26 | 2021-05-18 | 重庆材料研究院有限公司 | Spinel phase high-entropy thermistor material and preparation method thereof |
| CN112811891B (en) * | 2020-12-26 | 2022-08-02 | 重庆材料研究院有限公司 | Spinel phase high-entropy thermistor material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102693795B (en) | 2015-07-15 |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 212400 Zhenjiang City, Jiangsu province Jurong City Zhang Miao Jurong Industrial Zone Boyuan Electronic Co. Ltd. Applicant after: Jurongshi BOYUAN Electronics CO., Ltd. Address before: 212400 Zhenjiang City, Jiangsu province Jurong Boyuan Electronic Co. Ltd. Applicant before: Jurongshi BOYUAN Electronics CO., Ltd. |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Chen Hongbing Inventor before: Wang Meifeng |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170804 Address after: 528000 Guangdong Province, Foshan city Shunde District Lunjiao teach Xin Min Cun Wei Hui Guang Zhu Lu Guang Zhu Lu Wai East Hefeng No. six (No. 10, two floor) Patentee after: Shunde Foshan Crystal Electronics Co., Ltd. Address before: 212400 Zhenjiang City, Jiangsu province Jurong City Zhang Miao Jurong Industrial Zone Boyuan Electronic Co. Ltd. Patentee before: Jurongshi BOYUAN Electronics CO., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 Termination date: 20180604 |