CN102682944A - Negative temperature coefficient (NTC) thermosensitive resistor material - Google Patents
Negative temperature coefficient (NTC) thermosensitive resistor material Download PDFInfo
- Publication number
- CN102682944A CN102682944A CN2012101816446A CN201210181644A CN102682944A CN 102682944 A CN102682944 A CN 102682944A CN 2012101816446 A CN2012101816446 A CN 2012101816446A CN 201210181644 A CN201210181644 A CN 201210181644A CN 102682944 A CN102682944 A CN 102682944A
- Authority
- CN
- China
- Prior art keywords
- ntc
- ntc thermistor
- adhesive
- slurry
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a negative temperature coefficient (NTC) thermosensitive resistor material which comprises, by weight, 20-40% of Mn2O3, 15-20% of Co2O3, 5-15% of Ni2O3, 20-50% of MgO and 2-8% of Al2O3. The ingredients of the NTC thermosensitive resistor material are mixed, and then ethanol, a binding agent and a dispersing agent are added into a mixture to prepare slurry. The slurry is sequentially subjected to casting molding, drying, separation, cutting, glue ejection and sintering to obtain a ceramic chip, and NTC thermosensitive resistors with 450-600 (kilohm.mm) of resistivity rho and 3800 K-3900 K of material constant B are obtained after electrode manufacture. The NTC thermosensitive resistor material has the advantages of being good in linearity, being conveniently applied to the temperature measuring industry, being capable of being manufactured into the high-resistance-value low-B-value thermosensitive resistors, being used simultaneously at high temperature and at low temperature, and capable of meeting the using requirements of special customers so as to avoid the situation that the resistors are required to be connected in series when a high temperature section has a small resistance value and a weak signal.
Description
Technical field
The present invention relates to a kind of thermistor, is a kind of NTC thermistor material and the method for utilizing this material manufacture NTC thermistor specifically.
Background technology
NTC (the abbreviation of Negative Temperature Coefficient at present; The meaning is the temperature coefficient of bearing) thermistor adopts existing prescription and technology can only accomplish low resistance, low B value: accomplish 3800K ~ 3900K as if the B value, resistivity can only be accomplished 50～100 (k Ω .mm); And the formula combination that is difficult to realize high value, hangs down the B value, high value, low B value refer to the B value and accomplish 3800K ~ 3900K, and resistivity can be accomplished 450～600 (k Ω .mm).Low-resistance is hanged down B, and is less because of resistance, can't use simultaneously in low, high temperature section, and resistance is very little during because of high temperature, because of the NTC characteristic is to diminish with temperature rising resistance, otherwise then becomes big.When high temperature uses signal a little less than, can't satisfy the requirement of particular client.
Summary of the invention
Goal of the invention: in order to overcome the deficiency of prior art, first purpose of the present invention provides that a kind of to produce the electricalresistivity be 450～600 (k Ω .mm), and material constant B is the NTC thermistor material of 3800K ~ 3900K.
Second purpose of the present invention is to provide a kind of method of utilizing above-mentioned NTC thermistor material to make the NTC thermistor.
Technical scheme: in order to solve above-mentioned first purpose, the technical scheme that the present invention adopted is: a kind of NTC thermistor material comprises following component in percentage by weight: Mn
2O
320 ~ 40%, Co
2O
315 ~ 20%, Ni
2O
35 ~ 15%, MgO 20 ~ 50%, Al
2O
32 ~ 8%.
Adopt said ratio, make the B value of thermistor accomplish 3800K ~ 3900K, resistivity can be accomplished 450～600 (k Ω .mm).
In order to solve above-mentioned second purpose, the technical scheme that the present invention adopted is: a kind of manufacturing approach of NTC thermistor, this method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned NTC thermistor material is mixed according to percentage by weight; Add ethanol, adhesive, dispersant then and be made into slurry, wherein the NTC thermistor material: ethanol: adhesive: the weight ratio=1:0.3 of dispersant～0.5:0.5～0.7:0.05～0.1;
2) flow casting molding; The slurry that configures is placed vacuum tank; Adopt conduit that slurry is absorbed water on the carrier film, thickness is the film of 20～70 μ m, then annular transmit and through baking oven with 30～60 ℃ of each layers of oven dry; Circulation is made to the number of plies and the thickness of design, and oven dry is after separation, cutting, binder removal, sintering get ceramics;
3) system electrode is with the ceramics coated on both sides silver electrode that sinters; Promptly obtaining said electricalresistivity is 450～600 (k Ω .mm), and material constant B is the NTC thermistor of 3800K ~ 3900K.
Said adhesive is an electronic ceramic vinyl modified adhesive.Preferred adhesive CK24 among the present invention.
Beneficial effect: compared with prior art, advantage of the present invention is: 1) it is better linear, easily is applied in the thermometric industry; 2) metal oxide adopts this prescription can accomplish the formula combination of high value, low B value: the electricalresistivity is 450～600 (k Ω .mm), and material constant B is 3800K ~ 3900K; 3) can in wide temperature range, use, can when high and low temperature, use simultaneously; 4) can satisfy when low temperature (60 degree and below) or high temperature section 200 and spend the use that above clients have the resistance specific (special) requirements, can also avoid the client to need series resistance than small-signal a little less than because of resistance in high temperature section.
Embodiment
Below in conjunction with embodiment the present invention is done further detailed description.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also make some improvement, these improvement also should be regarded as protection scope of the present invention.
Embodiment 1: a kind of NTC thermistor material comprises following component in percentage by weight: Mn
2O
320%, Co
2O
320%, Ni
2O
35%, MgO 50%, Al
2O
35%.
The manufacturing approach of the low B value negative temperature system of above-mentioned high value thermistor, this method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight; Add ethanol, adhesive C K24, dispersant then and be made into slurry, wherein metal oxide: ethanol: adhesive: the weight ratio=1:0.3:0.5:0.05 of dispersant; Adhesive C K24 is the commercially available prod; CK24 is a kind of electronic ceramic vinyl modified adhesive; It is the dispersant of BYK110 that dispersant adopts model;
2) flow casting molding; The slurry that configures is placed vacuum tank; Adopt conduit that slurry is absorbed water on the carrier film, thickness is the film of 20～70 μ m, then annular transmit and through baking oven with 30～60 ℃ of each layers of oven dry; Circulation is made to the number of plies and the thickness of design, and oven dry is after separation, cutting, binder removal, sintering get ceramics;
3) system electrode is with the ceramics coated on both sides silver electrode that sinters;
4) scribing is divided into required size according to the resistance demand; Promptly obtain the low B value NTC thermistor of above-mentioned high value.
Through detecting, the electricalresistivity of this thermistor is 450～600 (k Ω .mm), and material constant B is 3800K ~ 3900K.
Detect: resistivity algorithms: ρ=RS/T
In the formula: the resistance that R:NTC chip (measuring accuracy+/ 0.02 ℃) under 25 ℃ of temperature records
S:NTC area of chip: long * wide
The thickness of T:NTC chip
B value-based algorithm: B=(T1*T2/ (T2-T1)) * ㏑ (R1/R2)
T1/T2 is generally 25/85, and perhaps 25/50, perhaps 25/100.
Resistance value during R1=temperature T 1
Resistance value during R2=temperature T 2
T1=298.15K(273.15+25℃)
T2=323.15K(273.15+50℃)
Embodiment 2: basic identical with embodiment 1, different is the prescription of NTC thermistor material, specific as follows: Mn
2O
340%, Co
2O
315%, Ni
2O
315%, MgO 28%, Al
2O
32%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.5:0.7:0.1 of dispersant.
Through detecting, the electricalresistivity of this thermistor is 450～600 (k Ω .mm), and material constant B is 3800K ~ 3900K.
Embodiment 3: basic identical with embodiment 1, different is the prescription of NTC thermistor material, specific as follows: Mn
2O
330%, Co
2O
318%, Ni
2O
312%, MgO 32%, Al
2O
38%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.4:0.6:0.06 of dispersant.
Through detecting, the electricalresistivity of this thermistor is 450～600 (k Ω .mm), and material constant B is 3800K ~ 3900K.
Embodiment 4: basic identical with embodiment 1, different is the prescription of NTC thermistor material, specific as follows: Mn
2O
338%, Co
2O
320%, Ni
2O
314%, MgO 20%, Al
2O
38%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.35:0.55:0.08 of dispersant.
Through detecting, the electricalresistivity of this thermistor is 450～600 (k Ω .mm), and material constant B is 3800K ~ 3900K.
Claims (3)
1. a NTC thermistor material is characterized in that, comprises following component in percentage by weight: Mn
2O
320 ~ 40%, Co
2O
315 ~ 20%, Ni
2O
35 ~ 15%, MgO 20 ~ 50%, Al
2O
32 ~ 8%.
2. make the method for NTC thermistor according to the said NTC thermistor material of claim 1, it is characterized in that this method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned NTC thermistor material is mixed according to percentage by weight; Add ethanol, adhesive, dispersant then and be made into slurry, wherein the NTC thermistor material: ethanol: adhesive: the weight ratio=1:0.3 of dispersant～0.5:0.5～0.7:0.05～0.1;
2) flow casting molding; The slurry that configures is placed vacuum tank; Adopt conduit that slurry is absorbed water on the carrier film, thickness is the film of 20～70 μ m, then annular transmit and through baking oven with 30～60 ℃ of each layers of oven dry; Circulation is made to the number of plies and the thickness of design, and oven dry is after separation, cutting, binder removal, sintering get ceramics;
3) system electrode is with the ceramics coated on both sides silver electrode that sinters; Promptly obtaining said electricalresistivity is 450～600 (k
Ω .mm), material constant B is the NTC thermistor of 3800K ~ 3900K.
3. according to the manufacturing approach of the said NTC thermistor of claim 2, it is characterized in that said adhesive is an electronic ceramic vinyl modified adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101816446A CN102682944A (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient (NTC) thermosensitive resistor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101816446A CN102682944A (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient (NTC) thermosensitive resistor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102682944A true CN102682944A (en) | 2012-09-19 |
Family
ID=46814715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101816446A Pending CN102682944A (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient (NTC) thermosensitive resistor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102682944A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499398A (en) * | 2013-10-09 | 2014-01-08 | 浙江伦特机电有限公司 | Linear thermometric cable |
| CN103864412A (en) * | 2014-02-25 | 2014-06-18 | 桂林电子科技大学 | Low-resistance BaM<II><x>Bi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material and preparation method thereof |
| CN104051093A (en) * | 2014-06-27 | 2014-09-17 | 句容市博远电子有限公司 | Low-resistance high-B-value negative temperature coefficient thermistor |
| CN104051094A (en) * | 2014-06-30 | 2014-09-17 | 句容市博远电子有限公司 | Multicomponent system thermistor with strontium oxide |
| CN104064297A (en) * | 2014-06-30 | 2014-09-24 | 句容市博远电子有限公司 | Thermistor material for ultra-low temperature environment |
| CN104157383A (en) * | 2014-06-27 | 2014-11-19 | 句容市博远电子有限公司 | Molecular silver added thermistor |
| CN105139985A (en) * | 2015-08-25 | 2015-12-09 | 深圳市毫欧电子有限公司 | Negative temperature coefficient (NTC) thermistor and preparation method thereof |
| CN104051095B (en) * | 2014-06-30 | 2017-07-21 | 山东鸿荣电子有限公司 | A kind of quaternary system thermistor material for adding titanium oxide |
| CN113454736A (en) * | 2019-02-22 | 2021-09-28 | 三菱综合材料株式会社 | Method for manufacturing thermistor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85102991A (en) * | 1985-04-01 | 1987-01-17 | 中国科学院新疆物理研究所 | high-temperature thermistor with high reproducibility |
| US5491118A (en) * | 1994-12-20 | 1996-02-13 | E. I. Du Pont De Nemours And Company | Cadmium-free and lead-free thick film paste composition |
| US5661094A (en) * | 1994-06-14 | 1997-08-26 | Siemens Matsushita Gmbh & Co. Kg | Sintered ceramic for high-stability thermistors and method for production thereof |
| CN1405798A (en) * | 2002-11-06 | 2003-03-26 | 祝翌 | Chip-type negative temperature coefficient thermistor and its manufacturing method by pure wet method |
| CN101127266A (en) * | 2007-09-12 | 2008-02-20 | 山东中厦电子科技有限公司 | High evenness negative temperature coefficient heat-sensitive resistance material and its preparation method |
| CN102122552A (en) * | 2010-12-08 | 2011-07-13 | 深圳顺络电子股份有限公司 | Negative temperature coefficient thermal resistor with variable thermosensitive index |
| CN102249648A (en) * | 2011-04-01 | 2011-11-23 | 中国科学院新疆理化技术研究所 | Magnesium-containing quaternary system negative temperature coefficient thermistor material |
-
2012
- 2012-06-04 CN CN2012101816446A patent/CN102682944A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85102991A (en) * | 1985-04-01 | 1987-01-17 | 中国科学院新疆物理研究所 | high-temperature thermistor with high reproducibility |
| US5661094A (en) * | 1994-06-14 | 1997-08-26 | Siemens Matsushita Gmbh & Co. Kg | Sintered ceramic for high-stability thermistors and method for production thereof |
| US5491118A (en) * | 1994-12-20 | 1996-02-13 | E. I. Du Pont De Nemours And Company | Cadmium-free and lead-free thick film paste composition |
| CN1405798A (en) * | 2002-11-06 | 2003-03-26 | 祝翌 | Chip-type negative temperature coefficient thermistor and its manufacturing method by pure wet method |
| CN101127266A (en) * | 2007-09-12 | 2008-02-20 | 山东中厦电子科技有限公司 | High evenness negative temperature coefficient heat-sensitive resistance material and its preparation method |
| CN102122552A (en) * | 2010-12-08 | 2011-07-13 | 深圳顺络电子股份有限公司 | Negative temperature coefficient thermal resistor with variable thermosensitive index |
| CN102249648A (en) * | 2011-04-01 | 2011-11-23 | 中国科学院新疆理化技术研究所 | Magnesium-containing quaternary system negative temperature coefficient thermistor material |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499398B (en) * | 2013-10-09 | 2016-01-13 | 浙江伦特机电有限公司 | Linear thermometric cable |
| CN103499398A (en) * | 2013-10-09 | 2014-01-08 | 浙江伦特机电有限公司 | Linear thermometric cable |
| CN103864412A (en) * | 2014-02-25 | 2014-06-18 | 桂林电子科技大学 | Low-resistance BaM<II><x>Bi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material and preparation method thereof |
| CN104051093A (en) * | 2014-06-27 | 2014-09-17 | 句容市博远电子有限公司 | Low-resistance high-B-value negative temperature coefficient thermistor |
| CN104051093B (en) * | 2014-06-27 | 2018-05-01 | 句容市博远电子有限公司 | Low resistance high B-value negative temperature coefficient thermistor |
| CN104157383A (en) * | 2014-06-27 | 2014-11-19 | 句容市博远电子有限公司 | Molecular silver added thermistor |
| CN104157383B (en) * | 2014-06-27 | 2017-11-14 | 句容市博远电子有限公司 | A kind of thermistor for adding molecule silver |
| CN104051094A (en) * | 2014-06-30 | 2014-09-17 | 句容市博远电子有限公司 | Multicomponent system thermistor with strontium oxide |
| CN104051095B (en) * | 2014-06-30 | 2017-07-21 | 山东鸿荣电子有限公司 | A kind of quaternary system thermistor material for adding titanium oxide |
| CN104064297A (en) * | 2014-06-30 | 2014-09-24 | 句容市博远电子有限公司 | Thermistor material for ultra-low temperature environment |
| CN105139985A (en) * | 2015-08-25 | 2015-12-09 | 深圳市毫欧电子有限公司 | Negative temperature coefficient (NTC) thermistor and preparation method thereof |
| CN113454736A (en) * | 2019-02-22 | 2021-09-28 | 三菱综合材料株式会社 | Method for manufacturing thermistor |
| CN113454736B (en) * | 2019-02-22 | 2023-02-17 | 三菱综合材料株式会社 | Method for manufacturing thermistor |
| US11763967B2 (en) | 2019-02-22 | 2023-09-19 | Mitsubishi Materials Corporation | Method of manufacturing thermistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102682944A (en) | Negative temperature coefficient (NTC) thermosensitive resistor material | |
| CN102682942B (en) | Thermistor with low resistance value, high B value and negative temperature coefficient | |
| CN102682941B (en) | High-resistance low-B-value negative temperature coefficient thermistor | |
| CN102568723B (en) | NTC (negative temperature coefficient) thermistor chip, resistor and manufacturing method thereof | |
| CN104124014A (en) | Double-layer NTC (Negative Temperature Coefficient) thermistor and preparation method thereof | |
| CN102122552B (en) | Negative temperature coefficient thermal resistor with variable thermosensitive index | |
| CN104064297A (en) | Thermistor material for ultra-low temperature environment | |
| CN102693795B (en) | Negative temperature coefficient thermistor | |
| CN102436880B (en) | Thermistor element | |
| CN104569108B (en) | A kind of preparation method of chip oxygen sensor | |
| CN102270531A (en) | Preparation method of laminated sheet-type negative temperature coefficient thermistor | |
| CN102682943B (en) | Method for producing medical high-precision negative temperature coefficient (NTC) thermosensitive resistors | |
| CN104150880A (en) | Manganese-cobalt-copper thermistor material | |
| CN105788786A (en) | Method of manufacturing NTC thermistor element | |
| CN102693794B (en) | Ultralow-resistivity high-B value negative temperature coefficient (NTC) thermistor | |
| TW201139326A (en) | Semiconductor ceramic composition for ntc thermistor and ntc thermistor | |
| CN104051095B (en) | A kind of quaternary system thermistor material for adding titanium oxide | |
| CN103664141B (en) | A kind of negative tempperature coefficient thermistor chip, thermistor with and preparation method thereof | |
| CN104051094A (en) | Multicomponent system thermistor with strontium oxide | |
| CN103175866A (en) | Integrated planar gas sensor substrate | |
| CN104086160B (en) | Add the binary system thermistor material of lanthana | |
| CN104051093B (en) | Low resistance high B-value negative temperature coefficient thermistor | |
| CN102617117A (en) | Negative temperature coefficient thermal resistor chip material and preparation method thereof | |
| CN104157383B (en) | A kind of thermistor for adding molecule silver | |
| CN201853558U (en) | Chip type thermistor with negative temperature coefficient |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 212400 Zhenjiang City, Jiangsu province Jurong City Zhang Miao Jurong Industrial Zone Boyuan Electronic Co. Ltd. Applicant after: Jurongshi BOYUAN Electronics CO., Ltd. Address before: 212400 Zhenjiang City, Jiangsu province Jurong Boyuan Electronic Co. Ltd. Applicant before: Jurongshi BOYUAN Electronics CO., Ltd. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120919 |