CN102122552B - Negative temperature coefficient thermal resistor with variable thermosensitive index - Google Patents
Negative temperature coefficient thermal resistor with variable thermosensitive index Download PDFInfo
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- CN102122552B CN102122552B CN2010105798984A CN201010579898A CN102122552B CN 102122552 B CN102122552 B CN 102122552B CN 2010105798984 A CN2010105798984 A CN 2010105798984A CN 201010579898 A CN201010579898 A CN 201010579898A CN 102122552 B CN102122552 B CN 102122552B
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Abstract
The invention discloses a negative temperature coefficient thermal resistor with a variable thermosensitive index, which comprises a thermal resistor chip obtained by the following steps of: lamination and roasting of blank films and extruded formation of rolling films, wherein the blank films are obtained by slurry casting and drying formation of transition metal oxide mixed powders. The negative temperature coefficient thermal resistor with the variable thermosensitive index is characterized in that the blank films include high-B value blank films and low-B value blank films. The high-B value blank film contains 50mol% of Mn3O4, 35mol% of Co3O4, 10mol% of Al2O3 and 25mol% of TiO2. The low-B value blank film contains 60mol% of Mn3O4, 5mol% of Ni2O3, 15mol% of CuO and 20mol% of La2O3. The value B rises as the temperature increases, thus the thermal resistor has a positive B-T characteristic, and the negative temperature coefficient alpha is within the temperature range from -100 DEG C to 150 DEG C, and the temperature coefficient is stably maintained within the range from -4% to -2%.
Description
Technical field
The present invention relates to thermistor, particularly relate to the variable negative tempperature coefficient thermistor of a kind of temperature-sensitive index.
Background technology
The temperature-sensitive index B of existing negative temperature coefficient (Negative Temperature Coefficient, initialism are NTC) thermistor is the constant of fixing, and claims material constant again.Have only a B value under every kind of prescription and the sintering temperature, and resistivity is high more, the B value is big more.In addition, the temperature coefficient of B value and NTC thermistor (Temperature Coefficient, initialism are TC) α positive correlation, relational expression be α=-B/T
2, that is to say that the B value is big more, its α value is also big more, generally selects for use the low B value thermistor of B value＜1500 to measure at low-temperature space, generally selects for use the high B value thermistor of B value＞5000 to measure in the high-temperature region.When using the NTC thermistor temperature-100～100 of wide region ℃ being measured, selecting the B value is that 1000 low B value thermistor is measured, and α is excessive for its temperature coefficient, is-3～-0.6%; And selecting the B value to measure for the thermistor of high B value 4500, its temperature coefficient α is too small again, is-15～-3%, causes to be difficult to the control survey precision, is necessary the temperature coefficient α of NTC thermistor is remained on the variable scope of temperature-sensitive index.
Summary of the invention
Technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, provides a kind of temperature-sensitive index variable negative tempperature coefficient thermistor.
Technical problem of the present invention solves through following technical scheme.
The variable negative tempperature coefficient thermistor of this temperature-sensitive index; Comprise thermistor chip; The parallel upper and lower surface of said thermistor chip is respectively equipped with the metal electrode of parallel upper and lower electrode slice; Said thermistor chip is by giving birth to the roasting of embryophoric membrane sheet lamination, rolling the film extrusion modling, and said living embryophoric membrane sheet is by the slurry curtain coating, the drying forming that comprise the transition metal oxide mixed powder.
The characteristics of the negative tempperature coefficient thermistor that this temperature-sensitive index is variable are:
Said living embryophoric membrane sheet comprises that high B value is given birth to the embryophoric membrane sheet and low B value is given birth to the embryophoric membrane sheet; Said high B value is that the B value is at least 4500, and said low B value is that the B value is at most 1500.
Said high B value is given birth to the embryophoric membrane sheet and is processed by the transition metal oxide mixed powder that comprises following component and mole (mol) percentage thereof:
Manganese oxide Mn
3O
450mol%;
Cobalt oxide Co
3O
435mol%;
Aluminium oxide Al
2O
310mol%;
Titanium oxide TiO
25mol%;
Said low B value is given birth to the embryophoric membrane sheet and is processed by the transition metal oxide mixed powder that comprises following component and mol percentage thereof:
Manganese oxide Mn
3O
460mol%;
The oxidation nickel
2O
35mol%;
Cupric oxide CuO 15mol%;
Lanthana La
2O
320mol%.
Technical problem of the present invention solves through following further technical scheme.
Said thermistor chip is by giving birth to embryophoric membrane sheet lamination; Be to be that said high B value is given birth to embryophoric membrane sheet, middle for the putting in order of said low B value life embryophoric membrane sheet, to be stacked between the said parallel upper and lower metal pole piece with said parallel upper and lower metal pole piece vertical angle according to both sides; The quantity that the high B value of both sides is given birth to the embryophoric membrane sheet is identical, and the quantity that middle low B value is given birth to the embryophoric membrane sheet is 1/ (40～60) that said high B value is given birth to embryophoric membrane sheet quantity.
Said lamination roasting is under 1100～1300 ℃ of temperature, to carry out compound co-sintering; Make said thermistor chip not only have the characteristic of low-resistivity, high B value; Also have the variable characteristic of B value, its B value raises with the rising of temperature, and range of application can significantly be expanded.
The difference of the sintering temperature of the sintering temperature of said high B value temperature-sensitive powder and said low B value temperature-sensitive powder is at most 10 ℃, and said high B value temperature-sensitive powder is at least 100 times of the resistivity of said low B value temperature-sensitive powder under 25 ℃ in the resistivity under 25 ℃.
The thickness of said living embryophoric membrane sheet is 9～11 μ m.
The length of said thermistor chip and width are 8～12mm, highly are 1～2mm.
Technical problem of the present invention solves through following further again technical scheme.
Said high B value temperature-sensitive powder also comprises sintering aid bismuth oxide Bi
2O
3, said sintering aid bismuth oxide Bi
2O
3With the mass ratio of said transition metal oxide mixed powder be (0.5～3) %: 1.
Said low B value temperature-sensitive powder also comprises sintering aid bismuth oxide Bi
2O
3, said sintering aid bismuth oxide Bi
2O
3With the mass ratio of said transition metal oxide mixed powder be (0.5～3) %: 1.
The beneficial effect of the present invention and prior art contrast is:
Negative tempperature coefficient thermistor of the present invention not only has the characteristic of the high B value of low-resistivity; Also has the characteristic that becomes the B value; Its B value raises with the rising of temperature, has positive B-T characteristic, and negative temperature coefficient α reaches in-100～150 ℃ of scopes in that temperature is wide; Temperature coefficient is stabilized in-4%～-2%, can significantly expand its range of application.
Description of drawings
Fig. 1 is the profile of the specific embodiment of the invention;
Fig. 2 is the B-T graph of relation of Fig. 1.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention will be described.
A kind of like Fig. 1, the variable negative tempperature coefficient thermistor of temperature-sensitive index shown in 2; Comprise thermistor chip; The parallel upper and lower surface of thermistor chip is respectively equipped with parallel upper and lower metal pole piece; On parallel upper and lower metal pole piece, be welded with parallel upper and lower electrode slice respectively, thermistor chip is given birth to the embryophoric membrane sheet by the slurry curtain coating, the drying forming that comprise the transition metal oxide mixed powder by giving birth to the roasting of embryophoric membrane sheet lamination, rolling the film extrusion modling.
Give birth to the embryophoric membrane sheet and comprise that B value is that 4500 high B value life embryophoric membrane sheet and B value are 1000 low B value life embryophoric membrane sheet.
High B value is given birth to the embryophoric membrane sheet by following mol percentage, and prepares the temperature-sensitive powder through mix, presintering, pulverizing, and the resistivity that records its disk sample is 100000 Ω mm:
Manganese oxide Mn
3O
450mol%;
Cobalt oxide Co
3O
435mol%;
Aluminium oxide Al
2O
310mol%;
Titanium oxide TiO
25mol%;
Low B value is given birth to the embryophoric membrane sheet by following mol percentage, and prepares the temperature-sensitive powder through mix, presintering, pulverizing, and the resistivity that records its disk sample is 1000 Ω mm:
Manganese oxide Mn
3O
460mol%;
The oxidation nickel
2O
35mol%;
Cupric oxide CuO 15mol%;
Lanthana La
2O
320mol%.
With the temperature-sensitive powder of above two kinds of different B values, add mass ratio respectively and be 1% Bi
2O
3, add appropriate amount of organic and adhesive again and carry out flow casting molding, preparing thickness respectively is the living embryophoric membrane sheet of 10 μ m.
Thermistor chip is by above-mentioned living embryophoric membrane sheet lamination; Be to be that high B value is given birth to embryophoric membrane sheet, middle for the putting in order of the living embryophoric membrane sheet of low B value, to be stacked between the parallel upper and lower metal pole piece with parallel upper and lower metal pole piece vertical angle according to both sides; The quantity that the high B value of both sides is given birth to the embryophoric membrane sheet all is 50, and the quantity that middle low B value is given birth to the embryophoric membrane sheet is the 1/50=1 sheet that high B value is given birth to embryophoric membrane sheet quantity.
The lamination roasting is under 1100～1300 ℃ of temperature, to carry out compound co-sintering.After burning till, cutting into length and width is 10mm, highly is 1 cubic block, behind the difference silver ink firing electrode of two ends, tests its B-T characteristic, and the result sees the following form.For contrasting beneficial effect of the present invention, also listed the temperature coefficient of thermistor under different temperatures that only uses low B value temperature-sensitive powder and only use high B value temperature-sensitive powder to make in the table.
The result shows: the B value of the composite thermistor of this embodiment raises with temperature, has positive B-T characteristic, and negative temperature coefficient α reaches in-100～150 ℃ of scopes in that temperature is wide, and temperature coefficient is stabilized in-4%～-2%.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.Those of ordinary skill for technical field under the present invention; Under the prerequisite that does not break away from the present invention's design, make some alternative or obvious modification that are equal to; And performance or purposes are identical, all should be regarded as belonging to the scope of patent protection that the present invention is confirmed by claims of being submitted to.
Claims (3)
1. negative tempperature coefficient thermistor that the temperature-sensitive index is variable; Comprise thermistor chip; The parallel upper and lower surface of said thermistor chip is respectively equipped with the metal electrode of parallel upper and lower electrode slice; Said thermistor chip is by giving birth to the roasting of embryophoric membrane sheet lamination, rolling the film extrusion modling, and said living embryophoric membrane sheet is characterized in that by the slurry curtain coating, the drying forming that comprise the transition metal oxide mixed powder:
Said living embryophoric membrane sheet comprises that high B value is given birth to the embryophoric membrane sheet and low B value is given birth to the embryophoric membrane sheet; Said high B value is that the B value is at least 4500, and said low B value is that the B value is at most 1500;
Said high B value is given birth to the embryophoric membrane sheet and is processed by the transition metal oxide mixed powder that comprises following component and mole (mol) percentage thereof:
Manganese oxide Mn
3O
450mol%;
Cobalt oxide Co
3O
435mol%;
Aluminium oxide Al
2O
310mol%;
Titanium oxide TiO
25mol%;
Said low B value is given birth to the embryophoric membrane sheet and is processed by the transition metal oxide mixed powder that comprises following component and mol percentage thereof:
Manganese oxide Mn
3O
460mol%;
The oxidation nickel
2O
35mol%;
Cupric oxide CuO 15mol%;
Lanthana La
2O
320mol%;
Said thermistor chip is by giving birth to embryophoric membrane sheet lamination; Be to be that said high B value is given birth to embryophoric membrane sheet, middle for the putting in order of said low B value life embryophoric membrane sheet, to be stacked between the said parallel upper and lower metal pole piece with said parallel upper and lower metal pole piece vertical angle according to both sides; The quantity that the high B value of both sides is given birth to the embryophoric membrane sheet is identical, and the quantity that middle low B value is given birth to the embryophoric membrane sheet is 1/ (40～60) that said high B value is given birth to embryophoric membrane sheet quantity;
Said lamination roasting is under 1100～1300 ℃ of temperature, to carry out compound co-sintering.
2. the variable negative tempperature coefficient thermistor of temperature-sensitive index as claimed in claim 1 is characterized in that:
Said high B value temperature-sensitive powder also comprises sintering aid bismuth oxide Bi
2O
3, said sintering aid bismuth oxide Bi
2O
3With the mass ratio of said transition metal oxide mixed powder be (0.5～3) %: 1.
3. the variable negative tempperature coefficient thermistor of temperature-sensitive index as claimed in claim 2 is characterized in that:
Said low B value temperature-sensitive powder also comprises sintering aid bismuth oxide Bi
2O
3, said sintering aid bismuth oxide Bi
2O
3With the mass ratio of said transition metal oxide mixed powder be (0.5～3) %: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105798984A CN102122552B (en) | 2010-12-08 | 2010-12-08 | Negative temperature coefficient thermal resistor with variable thermosensitive index |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105798984A CN102122552B (en) | 2010-12-08 | 2010-12-08 | Negative temperature coefficient thermal resistor with variable thermosensitive index |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102122552A CN102122552A (en) | 2011-07-13 |
| CN102122552B true CN102122552B (en) | 2012-11-07 |
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|---|---|---|---|
| CN2010105798984A Expired - Fee Related CN102122552B (en) | 2010-12-08 | 2010-12-08 | Negative temperature coefficient thermal resistor with variable thermosensitive index |
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Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568722B (en) * | 2012-01-05 | 2014-06-04 | 深圳顺络电子股份有限公司 | SMD (surface mounted device) thermistor and manufacturing method thereof |
| JP5846305B2 (en) * | 2012-05-28 | 2016-01-20 | 株式会社村田製作所 | NTC thermistor element and manufacturing method thereof |
| CN102682944A (en) * | 2012-06-04 | 2012-09-19 | 句容市博远电子有限公司 | Negative temperature coefficient (NTC) thermosensitive resistor material |
| CN105551699B (en) * | 2015-12-24 | 2018-06-26 | 深圳顺络电子股份有限公司 | A kind of NTC thermistor and production method |
| CN106278226A (en) * | 2016-08-17 | 2017-01-04 | 中国科学院新疆理化技术研究所 | A kind of preparation method of ternary system negative temperature coefficient heat-sensitive resistance material |
| CN106348733B (en) * | 2016-08-25 | 2020-09-08 | 南京时恒电子科技有限公司 | High-precision NTC material and manufacturing method thereof |
| CN106336210A (en) * | 2016-08-28 | 2017-01-18 | 广西小草信息产业有限责任公司 | Chip for integrated system and manufacturing method thereof |
| CN107162571B (en) * | 2017-05-31 | 2020-01-10 | 深圳顺络电子股份有限公司 | Multilayer chip NTC thermistor ceramic material and preparation method thereof |
| CN109133901A (en) * | 2018-10-29 | 2019-01-04 | 惠州嘉科实业有限公司 | Thermistor containing iron series and preparation method thereof |
| CN109485402A (en) * | 2018-12-14 | 2019-03-19 | 中国科学院新疆理化技术研究所 | A method of improving manganese ferro-cobalt base thermal sensitive ceramics agglutinating property |
| CN110542488A (en) * | 2019-09-23 | 2019-12-06 | 安徽晶格尔电子有限公司 | Method for high-temperature measurement by using thermistor substrate |
| CN113936858A (en) * | 2020-07-13 | 2022-01-14 | 广东美的白色家电技术创新中心有限公司 | Temperature-sensing resistor paste, preparation method thereof, steam generator and household appliance |
| CN112366052A (en) * | 2020-11-09 | 2021-02-12 | 肇庆市金龙宝电子有限公司 | High-precision thermistor chip for medical body temperature measurement and preparation method thereof |
| CN115894026B (en) * | 2022-11-29 | 2023-08-08 | 唐山恭成科技有限公司 | NTC thermistor material with low resistivity and high B value and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1298187A (en) * | 1999-11-27 | 2001-06-06 | 中国科学院新疆物理研究所 | Wide temperature zone thermistor of variable constant thermosensitive material |
| CN1610017A (en) * | 2003-10-21 | 2005-04-27 | 上海春叶实业有限公司 | Multilayer sheet type negative temperature coefficient thermosensitive resistor and producing method thereof |
| CN101492284A (en) * | 2009-01-04 | 2009-07-29 | 山东中厦电子科技有限公司 | B value changeable negative temperature coefficient thermistor composition and method of producing the same |
-
2010
- 2010-12-08 CN CN2010105798984A patent/CN102122552B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1298187A (en) * | 1999-11-27 | 2001-06-06 | 中国科学院新疆物理研究所 | Wide temperature zone thermistor of variable constant thermosensitive material |
| CN1610017A (en) * | 2003-10-21 | 2005-04-27 | 上海春叶实业有限公司 | Multilayer sheet type negative temperature coefficient thermosensitive resistor and producing method thereof |
| CN101492284A (en) * | 2009-01-04 | 2009-07-29 | 山东中厦电子科技有限公司 | B value changeable negative temperature coefficient thermistor composition and method of producing the same |
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| CN102122552A (en) | 2011-07-13 |
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Granted publication date: 20121107 Termination date: 20161208 |