CN102691053A - Plate PECVD heating carrier - Google Patents

Plate PECVD heating carrier Download PDF

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Publication number
CN102691053A
CN102691053A CN2012101454873A CN201210145487A CN102691053A CN 102691053 A CN102691053 A CN 102691053A CN 2012101454873 A CN2012101454873 A CN 2012101454873A CN 201210145487 A CN201210145487 A CN 201210145487A CN 102691053 A CN102691053 A CN 102691053A
Authority
CN
China
Prior art keywords
groove
support plate
pecvd
board
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012101454873A
Other languages
Chinese (zh)
Inventor
姚骞
林大成
王虎
胡嫚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altusvia Energy Taicang Co Ltd
Original Assignee
Altusvia Energy Taicang Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altusvia Energy Taicang Co Ltd filed Critical Altusvia Energy Taicang Co Ltd
Priority to CN2012101454873A priority Critical patent/CN102691053A/en
Publication of CN102691053A publication Critical patent/CN102691053A/en
Pending legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a plate PECVD heating carrier, comprising a body provided with a first groove having holes arranged therein. Compared with the prior art, the invention provides not only an improvement in the problem of thermal conductivity insufficiency after heating, but also an effective improvement in battery conversion efficiency, and is suitable for silicon wafers with various specifications.

Description

Board-like PECVD heating support plate
Technical field
The present invention relates to a kind of silicon chip support plate, the heating support plate of particularly a kind of silicon chip in coating process.
Background technology
Plated film mode in the board-like PECVD employing; Silicon chip needs support plate in coating process; The support plate that is adopted at present is a solid, and is as depicted in figs. 1 and 2, and the support plate of solid has limited the transmission of the heat of bottom heating tube to silicon chip; Cause the silicon chip surface temperature low excessively, and then influence the efficiency of conversion of battery.
Summary of the invention
Goal of the invention: to the problem and shortage that above-mentioned prior art exists, the purpose of this invention is to provide a kind of board-like PECVD heating support plate, solved the problem that heat is difficult for reaching silicon chip.
Technical scheme: for realizing the foregoing invention purpose, the technical scheme that the present invention adopts is a kind of board-like PECVD heating support plate, comprises body, on said body, is provided with first groove, in said first groove, is provided with the hole.
For can the many usefulness of a plate, in said first groove, also be provided with more than one groove, in the said body upper surface of distance groove farthest, be provided with the hole.Preferably have the support plate of two grooves, in said first groove, also be provided with second groove, wherein the distance of the second groove distance body upper surface is provided with the hole greater than first groove in said second groove.
In order to be fit to the silicon chip of plurality of specifications, said groove is preferably square, the hole circular.
In order to reach more excellent heat-conducting effect, the preferred through hole in said hole.
Preferably, said groove and hole are arranged at the central position of said body.
Beneficial effect: the present invention has compared with prior art not only improved the insufficient problem of heating back thermal conductivity, has improved battery conversion efficiency effectively simultaneously, can also be fit to the silicon chip of plurality of specifications, accomplishes that a plate uses more.
Description of drawings
Fig. 1 is the vertical view of the board-like PECVD heating of prior art support plate;
Fig. 2 is the front view of Fig. 1;
Fig. 3 is the vertical view of the board-like PECVD heating of the present invention support plate;
Fig. 4 is the front view of Fig. 3;
Temperature comparison diagram when Fig. 5 is board-like PECVD heating support plate of prior art and the heating of the board-like PECVD heating of the present invention support plate on the silicon chip.
Among the figure, 1, body, 2, groove, 3, manhole.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
Like Fig. 3 and shown in Figure 4; The board-like PECVD heating of the present invention support plate difference with the prior art is: be provided with groove 2 at the center of body 1; Simultaneously also be provided with manhole 3 at the center of groove 2, can be simultaneously as 6 cun with 5 cun silicon chip support plate and test wafer support plate with 5 cun, the present invention is an integral structure; Do not have independent component, material is a graphite material.The present invention makes battery conversion efficiency improve 0.15% (absolute value, polycrystalline).The degree of depth of further groove of the present invention is 8mm ~ 12mm, can effectively improve the edge aberration in the coating process.
As shown in Figure 5, manhole structure of the present invention makes the peak temperature of silicon chip surface rise to 550 ℃ by 420 ℃, and certainly, the shape of through hole is not limited to circle, can also be square or other shape, but circular can be used as the wafer support plate of testing with 5 cun.

Claims (7)

1. a board-like PECVD heating support plate comprises body, on said body, is provided with first groove, in said first groove, is provided with the hole.
2. according to the said board-like PECVD heating support plate of claim 1, it is characterized in that: in said first groove, also be provided with more than one groove, in the said body upper surface of distance groove farthest, be provided with the hole.
3. according to the said board-like PECVD heating support plate of claim 1, it is characterized in that: in said first groove, also be provided with second groove, wherein the distance of the second groove distance body upper surface is provided with the hole greater than first groove in said second groove.
4. according to any said board-like PECVD heating support plate of claim 1 to 3, it is characterized in that: being shaped as of said groove is square.
5. according to any said board-like PECVD heating support plate of claim 1 to 3, it is characterized in that: said hole is a through hole.
6. according to any said board-like PECVD heating support plate of claim 1 to 3, it is characterized in that: said hole be shaped as circle.
7. according to any said board-like PECVD heating support plate of claim 1 to 3, it is characterized in that: said groove and hole are arranged at the central position of said body.
CN2012101454873A 2012-05-11 2012-05-11 Plate PECVD heating carrier Pending CN102691053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012101454873A CN102691053A (en) 2012-05-11 2012-05-11 Plate PECVD heating carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012101454873A CN102691053A (en) 2012-05-11 2012-05-11 Plate PECVD heating carrier

Publications (1)

Publication Number Publication Date
CN102691053A true CN102691053A (en) 2012-09-26

Family

ID=46856785

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012101454873A Pending CN102691053A (en) 2012-05-11 2012-05-11 Plate PECVD heating carrier

Country Status (1)

Country Link
CN (1) CN102691053A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107400870A (en) * 2017-09-25 2017-11-28 信利光电股份有限公司 A kind of fixture for glass evaporation coating machine
CN109318116A (en) * 2018-09-30 2019-02-12 深圳昊天龙邦复合材料有限公司 Composite material wafer support plate and its manufacturing method based on p-aramid paper
CN110220384A (en) * 2018-03-02 2019-09-10 秦文隆 Transfer plate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202054894U (en) * 2011-04-01 2011-11-30 石金精密科技(深圳)有限公司 Plate frame for solar battery piece
CN202193845U (en) * 2011-07-27 2012-04-18 中节能太阳能科技(镇江)有限公司 Silicon chip support plate applied to thin film deposition process
CN202688446U (en) * 2012-05-11 2013-01-23 奥特斯维能源(太仓)有限公司 Plate type PECVD (plasma enhanced chemical vapor deposition) heating carrying plate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202054894U (en) * 2011-04-01 2011-11-30 石金精密科技(深圳)有限公司 Plate frame for solar battery piece
CN202193845U (en) * 2011-07-27 2012-04-18 中节能太阳能科技(镇江)有限公司 Silicon chip support plate applied to thin film deposition process
CN202688446U (en) * 2012-05-11 2013-01-23 奥特斯维能源(太仓)有限公司 Plate type PECVD (plasma enhanced chemical vapor deposition) heating carrying plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107400870A (en) * 2017-09-25 2017-11-28 信利光电股份有限公司 A kind of fixture for glass evaporation coating machine
CN110220384A (en) * 2018-03-02 2019-09-10 秦文隆 Transfer plate
CN109318116A (en) * 2018-09-30 2019-02-12 深圳昊天龙邦复合材料有限公司 Composite material wafer support plate and its manufacturing method based on p-aramid paper

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Application publication date: 20120926