CN102684071A - Bi-module masing semiconductor laser capable of achieving mode distance of 100GHz - Google Patents
Bi-module masing semiconductor laser capable of achieving mode distance of 100GHz Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 24
- 230000003321 amplification Effects 0.000 claims abstract description 14
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 239000011435 rock Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 238000011084 recovery Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
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Abstract
The invention discloses a bi-module masing semiconductor laser capable of achieving a mode distance of 100GHz. The bi-module masing semiconductor laser comprises a substrate, an n-InP buffering layer, an InGaAsP lower limiting layer, a multi-quantum well active layer, an InGaAsP upper limiting layer, a p-InP layer, a p-InGaAsP etching prevention layer, an upper p-InP cover layer, a p-InGaAs ohm contact layer and metal electrode layers, wherein a Bragg grating structure is formed on the surface of the InGaAsP upper limiting layer and is processed in a grating region; an isolating ditch is formed on the p-InGaAs ohm contact layer and divides the p-InGaAs ohm contact layer into four segments; the metal electrode layers are respectively formed on each of the four segments of the p-InGaAs ohm contact layer; and the four segments of the p-InGaAs ohm contact layer are respectively corresponding to the four segment structures of the bi-module masing semiconductor laser, wherein the four segment structures comprise a front gain region, a phase region, a grating region and a back amplification region.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, but be that a kind of implementation pattern spacing is two module lasing semiconductor lasers of 100GHz.
Background technology
Along with the fast development of the Internet, the scale of switching system is increasing in the communication network, and operating rate is increasingly high; Following large-scale switching system will be handled the information that total amount reaches hundreds of Tbit/s, and this makes traditional based on the technological network of electronic signal process, owing to the restriction of " electronic bottleneck "; And seem gradually and be difficult to deal with; So,, will be the development trend of future network based on the all-optical network that full light exchange of the employing of full light signal treatment technology and full optical routing are selected.
The process of from the light data, synchronously extracting optical clock signal just is called the light time clock to be extracted, and is also referred to as optical clock recovery.The optical clock recovery technology is not only one of committed step that light signal locatees again, and for the light digital communication system very important effect is arranged, and it provides reference clock accurately and reliably for the normal operation of system.
In digital communication system, carrying out signal processing must have one clock signal is as time reference accurately, and it must be on phase place and frequency is consistent with data-signal.And for asynchronous network, clock signal can only be from the data-signal that receives, to obtain.In all-optical network, to carry out such as full light 3R (amplification, shaping, regularly), multiplex/demultiplex, full light exchange, waiting synchronously all is the clock signal of light in the signal processing in light territory.
The clock recovery technology that adopts in the current optical communication network is based on all that the mode of light/electricity/light realizes; The basic ideas of these technical schemes are exactly to convert light signal into the signal of telecommunication earlier; Through electric territory mature technique such as phase-locked loop, voltage controlled oscillators the clock in the electrical data signal number is extracted then and recover; Electrical clock signal after will recovering again at last is modulated to the light territory, obtains optical clock signal.Because the clock recovery technology on the electric territory is unusual maturation, so that these technical schemes implement is fairly simple.But development along with optical-fiber network; Its single channel transmission rate is from original 622Mbit/s; 2.5Gbit/s promote to 10Gbit/s, 40Gbit/s, 100Gbit/s gradually; Under high like this bit rate, because the physical restriction of electronic device itself, traditional clock recovery technology that is the basis with light/electricity/light mode will be difficult to realize.Therefore must development all-optical clock recovery technology.The all-optical clock recovery technology is not only the effective ways that solve the clock recovery of two-forty optical communication system, and it also is the important foundation technology that realizes all-optical network in the future.
At present, the scheme that is applied to the clock recovery of 40Gbit/s light signal has had many reports, comprising schemes such as optical fiber mode-locked laser, mode-locked laser, self-pulsing semiconductor lasers.Yet for the light signal clock recovery of 100Gbit/s, relevant research report is also fewer, and for the optical fiber mode-locked laser, it can be operated in the system of 100Gbit/s in theory, yet this scheme is limit by structure, volume, and is not easy of integration; And for mode locking semiconductor laser, since its complex structure, the long accurately control in chamber etc., and its research also has difficulties.
Summary of the invention
The technical problem that (one) will solve
In view of this, but main purpose of the present invention provides two module lasing semiconductor lasers that a kind of implementation pattern spacing is 100GHz, to realize the tuning of two module lasings and bimodulus frequency difference.
(2) technical scheme
For achieving the above object, but the invention provides two module lasing semiconductor lasers that a kind of implementation pattern spacing is 100GHz, comprising: a substrate; One n-InP resilient coating, this n-InP resilient coating is produced on the substrate; One InGaAsP lower limit layer, this InGaAsP lower limit layer are produced on this n-InP resilient coating; One multiple quantum well active layer, this multiple quantum well active layer are produced on this InGaAsP lower limit layer; One InGaAsP upper limiting layer, this InGaAsP upper limiting layer is produced on this multiple quantum well active layer, and its surface is formed with Bragg-grating structure, and this Bragg-grating structure is made in grating region; One p-InP layer, this p-InP layer are produced on this InGaAsP upper limiting layer; One p-InGaAsP etching barrier layer, this p-InGaAsP etching barrier layer are produced on this p-InP layer; P-InP cap rock on one, p-InP fabrication of cover coat is on this p-InGaAsP etching barrier layer on this; One p-InGaAs ohmic contact layer, this p-InGaAs ohmic contact layer are produced on this on p-InP cap rock, on this p-InGaAs ohmic contact layer, are formed with isolating trenches, and this isolating trenches is divided into four sections with this p-InGaAs ohmic contact layer; And be respectively formed at four sections metal electrode layers on the p-InGaAs ohmic contact layer; Wherein, four sections of being divided into of this p-InGaAs ohmic contact layer correspond respectively to this pair module lasing semiconductor laser four segment structures: preceding gain region, phase region, grating region and amplification region, back.
In the such scheme, said preceding gain region and amplification region, said back are called active area, and said phase region and said grating region are called passive region, and passive region is compared with the band gap wavelength of active area, and blue shift amount is 90nm, thereby reduces waveguide absorption loss.
In the such scheme, said isolating trenches is to become high resistance area through the mode that the He ion injects, thereby realizes the electricity isolation between each electrode.
In the such scheme, said isolating trenches is divided into four segment structures with device, and said isolating trenches length is 30 to 50 μ m, and metal electrode layer length equals the length of each segment structure respectively in every segment structure.
In the such scheme; The length of gain region accounts for 30% to 40% of total length before said; The length of said phase region accounts for 10% to 20% of total length, and the length of said DBR grating region accounts for 20% to 30% of total length, and the length of amplification region, said back accounts for 20% to 30% of total length.
In the such scheme,, can obtain two module lasings of laser through the injection current size of gain region before regulating and amplification region, back; Through regulating DBR grating region injection current size, can regulate to swash and penetrate the bimodulus intensity difference.
In the such scheme, the frequency interval of this pair module lasing semiconductor laser bimodulus is by the total length decision of three sections of preceding gain regions, phase region, grating region, the corresponding inversely proportional relation of these three sections total lengths of frequency interval difference and device.
(3) beneficial effect
But implementation pattern spacing provided by the invention is two module lasing semiconductor lasers of 100GHz, and can obtain wavelength difference is the bimodulus spacing of 0.8nm, to be applied to the clock recovery system of 100Gbit/s light signal; Intensity with two excitation modes is roughly the same, and mode frequency at interval can be tuning, component compact, advantage such as manufacture craft is simple.
Description of drawings
For further specifying technical characterictic of the present invention, in conjunction with following accompanying drawing, the present invention is done a detailed description, wherein:
But Fig. 1 is an embodiment of the invention implementation pattern spacing is vertical tangent plane structure chart of two module lasing semiconductor lasers of 100GHz;
But Fig. 2 is an embodiment of the invention implementation pattern spacing be 100GHz two module lasing semiconductor lasers overlook electrode figure;
But Fig. 3 is an embodiment of the invention implementation pattern spacing is the device overall structure figure of two module lasing semiconductor lasers of 100GHz.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
See also Fig. 1,2, the embodiment shown in 3, but the implementation pattern spacing that the embodiment of the invention provides is two module lasing semiconductor lasers of 100GHz, comprising:
One substrate 1, this substrate are n type InP substrate;
One n-InP resilient coating 2, this resilient coating 2 is produced on the substrate 1;
One InGaAsP lower limit layer 3, this InGaAsP lower limit layer 3 is produced on the n-InP resilient coating 2, and its thickness is about 120nm, and the material band gap wavelength is 1.3 microns;
One multiple quantum well active layer 4, this multiple quantum well active layer 4 is produced on the InGaAsP lower limit layer 3, and this multiple quantum well active layer 4 is five quantum well structures, and band gap wavelength is 1.55 microns;
One InGaAsP upper limiting layer 5, this InGaAsP upper limiting layer 5 is produced on the multiple quantum well active layer 4, and thickness is about 120nm, and the material band gap wavelength is 1.3 microns; Be positioned at the InGaAsP upper limiting layer 5 of grating region, Bragg grating is carved with on its surface;
One p-InP layer 6, this p-InP layer 6 is produced on the InGaAsP upper limiting layer 5, and these p-InP layer 6 thickness are about 120nm;
One p-InGaAsP etching barrier layer 7, this p-InGaAsP etching barrier layer 7 is produced on the p-InP layer 6, and thickness is about 30nm, the etching stop layer during as the capable bar etching of ridge;
P-InP cap rock 8 on one, p-InP fabrication of cover coat is on p-InGaAsP etching barrier layer 7 on this, and thickness is about 1.8 microns;
One p-InGaAs ohmic contact layer 9; This p-InGaAs ohmic contact layer 9 is produced on the p-InP cap rock 8; Thickness is about 200nm, on p-InGaAs ohmic contact layer 9, is formed with isolating trenches, passes through to inject the helium ion in this isolating trenches; P-InGaAs ohmic contact layer 9 is divided into four sections, isolates to realize the electricity between each electrode; And
Be respectively formed at four sections metal electrode layers 10,11,12,13 on the p-InGaAs ohmic contact layer, this metal electrode layer is Ti/Au, is produced on the upper surface of the p-InGaAs contact layer 9 that is divided into four sections;
Wherein, four sections of being divided into of this p-InGaAs ohmic contact layer correspond respectively to this pair module lasing semiconductor laser four segment structures: preceding gain region 14, phase region 15, grating region 16 and amplification region 17, back.
Gain region 14 is called active area with amplification region 17, back before wherein said, and phase region 15 is called passive region with grating region 16, and wherein the band gap wavelength of passive region and active area is compared, and blue shift amount is about 90nm, thereby reduces waveguide absorption loss.Among this embodiment, this wavelength blue shift is for realizing through quantum well mixing technology.
Wherein, make isolating trenches become high resistance area, thereby realize the electricity isolation between each electrode through the injection of He ion; Device is divided into the isolating trenches of four segment structures, and its length all is 50 μ m; The metal electrode layer length in each district equals the length in each district respectively.
The frequency interval of this pair module lasing semiconductor laser bimodulus is by the total length decision of three sections of preceding gain regions, phase region, grating region, the corresponding inversely proportional relation of these three sections total lengths of frequency interval difference and device.In this embodiment, the length of preceding gain region accounts for 26% of total length; Phase region accounts for 14% of total length; Grating region accounts for 21% of total length; Back amplification region accounts for 20% of total length.
In this embodiment, through the injection current size of gain region before regulating 14 and amplification region 17, back, can obtain two module lasings of laser.Through regulating DBR grating region injection current size, can regulate to swash and penetrate the bimodulus intensity difference.The frequency interval of bimodulus is determined by device length, the corresponding inversely proportional relation with device length of frequency interval difference.Within the specific limits, can regulate the frequency interval of bimodulus through selector length.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. but two module lasing semiconductor lasers that the implementation pattern spacing is 100GHz is characterized in that, comprising:
One substrate;
One n-InP resilient coating, this n-InP resilient coating is produced on the substrate;
One InGaAsP lower limit layer, this InGaAsP lower limit layer are produced on this n-InP resilient coating;
One multiple quantum well active layer, this multiple quantum well active layer are produced on this InGaAsP lower limit layer;
One InGaAsP upper limiting layer, this InGaAsP upper limiting layer is produced on this multiple quantum well active layer, and its surface is formed with Bragg-grating structure, and this Bragg-grating structure is made in grating region;
One p-InP layer, this p-InP layer are produced on this InGaAsP upper limiting layer;
One p-InGaAsP etching barrier layer, this p-InGaAsP etching barrier layer are produced on this p-InP layer;
P-InP cap rock on one, p-InP fabrication of cover coat is on this p-InGaAsP etching barrier layer on this;
One p-InGaAs ohmic contact layer, this p-InGaAs ohmic contact layer are produced on this on p-InP cap rock, on this p-InGaAs ohmic contact layer, are formed with isolating trenches, and this isolating trenches is divided into four sections with this p-InGaAs ohmic contact layer; And be respectively formed at four sections metal electrode layers on the p-InGaAs ohmic contact layer;
Wherein, four sections of being divided into of this p-InGaAs ohmic contact layer correspond respectively to this pair module lasing semiconductor laser four segment structures: preceding gain region, phase region, grating region and amplification region, back.
2. but implementation pattern spacing according to claim 1 is two module lasing semiconductor lasers of 100GHz; It is characterized in that; Gain region and amplification region, said back are called active area before said, and said phase region and said grating region are called passive region, and passive region is compared with the band gap wavelength of active area; Blue shift amount is 90nm, thereby reduces waveguide absorption loss.
3. but implementation pattern spacing according to claim 1 is two module lasing semiconductor lasers of 100GHz, it is characterized in that, said isolating trenches is to become high resistance area through the mode that the He ion injects, thereby realizes the electricity isolation between each electrode.
4. but implementation pattern spacing according to claim 1 is two module lasing semiconductor lasers of 100GHz; It is characterized in that; Said isolating trenches is divided into four segment structures with device; Said isolating trenches length is 30 to 50 μ m, and metal electrode layer length equals the length of each segment structure respectively in every segment structure.
5. but implementation pattern spacing according to claim 1 is two module lasing semiconductor lasers of 100GHz; It is characterized in that; The length of gain region accounts for 30% to 40% of total length before said; The length of said phase region accounts for 10% to 20% of total length, and the length of said DBR grating region accounts for 20% to 30% of total length, and the length of amplification region, said back accounts for 20% to 30% of total length.
6. but implementation pattern spacing according to claim 1 is two module lasing semiconductor lasers of 100GHz, it is characterized in that, through the injection current size of gain region before regulating and amplification region, back, can obtain two module lasings of laser; Through regulating DBR grating region injection current size, can regulate to swash and penetrate the bimodulus intensity difference.
7. but implementation pattern spacing according to claim 1 is two module lasing semiconductor lasers of 100GHz; It is characterized in that; The frequency interval of this pair module lasing semiconductor laser bimodulus is by the total length decision of three sections of preceding gain regions, phase region, grating region, the corresponding inversely proportional relation of these three sections total lengths of frequency interval difference and device.
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Cited By (3)
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| CN104377544A (en) * | 2014-11-28 | 2015-02-25 | 中国科学院半导体研究所 | Monolithic integrated laser chip based on amplification feedback to realize straight-strip bandwidth expansion |
| CN105576384A (en) * | 2016-01-15 | 2016-05-11 | 南京邮电大学 | Multi-channel tunable Tamm plasma perfect absorber |
| CN112086856A (en) * | 2020-10-13 | 2020-12-15 | 江苏华兴激光科技有限公司 | Semiconductor ultrashort pulse laser and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104377544A (en) * | 2014-11-28 | 2015-02-25 | 中国科学院半导体研究所 | Monolithic integrated laser chip based on amplification feedback to realize straight-strip bandwidth expansion |
| CN104377544B (en) * | 2014-11-28 | 2017-11-21 | 中国科学院半导体研究所 | The straight Monolithic Integrated Laser chip for adjusting bandwidth expansion is realized based on amplification feedback |
| CN105576384A (en) * | 2016-01-15 | 2016-05-11 | 南京邮电大学 | Multi-channel tunable Tamm plasma perfect absorber |
| CN105576384B (en) * | 2016-01-15 | 2019-10-29 | 南京邮电大学 | A kind of tunable Tamm plasma perfection absorber of multichannel |
| CN112086856A (en) * | 2020-10-13 | 2020-12-15 | 江苏华兴激光科技有限公司 | Semiconductor ultrashort pulse laser and preparation method thereof |
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