CN102684045B - High-power broadband ASE (Amplified Spontaneous Emission) light source in 1064 nm waveband - Google Patents
High-power broadband ASE (Amplified Spontaneous Emission) light source in 1064 nm waveband Download PDFInfo
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Abstract
The invention provides a high-power broadband ASE (Amplified Spontaneous Emission) light source in 1064 nm waveband, comprising a beam combiner, a section of YDF (Ytterbium Doped Fiber), an optical isolator, a fiber end cap, a semiconductor pump laser and a section of YDF in certain length. The invention is characterized in that: a light output end only needs to be welded with a small section of YDF in non-pumping state, the secondary absorption effect of the YDF on ASE optical signals is utilized, and an ASE spectrum shape is effectively processed and flatly outputted. An optical path box in which the YDF is wound is arranged on a temperature-controllable simple heating plate, the working temperature of the YDF is adjusted and controlled, the ASE spectrum shape is further outputted flatly, and the ASE light output spectrum bandwidth is effectively improved. Besides, in the non-output direction, the fiber end cap based on small-section multimode fiber grinding and coating manner is welded for restraining the light reflection on the end surface of the fiber, the laser output formed by self-oscillation is avoided, the pumping power is ensured to be improved, and meanwhile, the scale of ASE light output power is effectively improved.
Description
Technical field
The present invention relates to the applied light sources in field such as Fibre Optical Sensor, optical fiber communication and optical device measurement, the ASE optical fiber source in especially a kind of 1064nm wave band high-output power and broadband.
Background technology
1064nm wave band ASE light source, the amplified spontaneous emission based on rare-earth doped optical fibre (Amplified Spontaneous Emission) principle is made, and is called for short the ASE light source.With light-emitting diode (LED) or the super-radiance light emitting diode (SLD) of low power output, ultra broadband, compare, one ASE light source provides very high gain amplifier by one section doping ytterbium ion optical fiber, not only obtain the broadband radiation of higher-wattage, and be easy to effectively be coupled with fibre system; Its two rare earths ytterbium ion energy level is more stable than the energy level of semiconductor diode, so the ASE light source has spectrum stability preferably; The life-span of its three ASE light source than the LED of current extensive use or SLD life-span long, polarization correlated low, reliability is high.
Current traditional ASE light source generally adopts the fiber core with single-mold pump technology, but the shortcoming that exists some to overcome.The price costlinesses such as the highly doped single cladded fiber of one side rare earth, 980nm or 1480nm single mode semiconductor pump laser, production cost is high; Although the spectral bandwidth of traditional ASE light source can be accomplished widelyr on the other hand, the ASE optical output power is obviously lower, only 10mW ~ 20mW left and right.For some application scenarios such as optical fiber sensing system, optical device analysis to measure, very exigence high power, wideband A SE light source.
Realize high power, the Broadband emission of ASE light source, reasonably optical texture is most important.General direct increase pumping light power is realized the high-power output of ASE light source, but very high, the simple increase pumping light power of Active Optical Fiber gain is very easy to self-oscillation and produces the stimulated radiation light amplification, i.e. Output of laser, but not ASE light source.In addition, in light path, bad connection contact, fiber end face also can produce light reflection or light feedback, also easily form self-oscillation, and lasing possibility is arranged, this is all that the ASE light source is undesirable, and therefore how suppressing the reflection of end face light is also one of key point obtained the output of high power wideband A SE light.
For the spectrum flatness or the bandwidth that increase the ASE light source, the C-band(1550nm wave band) or the L-band(1610nm wave band) common practices of ASE light source is at light path output insertion gain flat filter GFF, filter out asymmetric peak in spectrum, for improving the uneven degree of spectrum spectrum shape, realize the output of ultra broadband ASE light.For inscribing smooth 1064nm wave band ASE GFF, its inscription cost is higher at present, and technological operation is more difficult, and the commercialization degree is not high.And access GFF filters out the ASE light at place, a part of peak, like this can great reduction power output level, cost of idleness.Therefore how effectively improving bandwidth is also another key point that obtains the output of high power wideband A SE light.
Summary of the invention
The object of the invention is to solve the prior art above shortcomings, propose a kind of high power wideband A SE light source of 1064nm wave band.
Purpose of the present invention is achieved through the following technical solutions:
A kind of high power wideband A SE light source of 1064nm wave band, it is characterized in that comprising semiconductor pump laser, bundling device, the first active doubly clad optical fiber, the first optical isolator, light path box, the controlled heating plate of temperature, the second active doubly clad optical fiber and optical fiber end cap, the output tail optical fiber of described semiconductor pump laser is connected with the pumping input optical fibre of bundling device, the passive doubly clad optical fiber of the output of bundling device is connected with the first active doubly clad optical fiber one end, and the first active doubly clad optical fiber other end is connected with the first optical isolator input; The first active doubly clad optical fiber is arranged in described light path box, and the light path box is placed on the controlled heating plate of described temperature, and the first optical isolator output welding has the optical fiber end cap to be connected; The passive doubly clad optical fiber of the input of bundling device is connected with the second active doubly clad optical fiber one end, and the second active doubly clad optical fiber other end is connected with the second optical isolator input, and the second optical isolator output is as the ASE light output end.The present invention is based on multimode cladding pumping technology, with the active doubly clad optical fiber YDF of pump laser pumping, produce the output of ASE light.Adopt YDF to ASE light signal double absorption, then in conjunction with regulating and the mode of controlling the YDF working temperature, smooth output ASE spectrum spectrum shape; At non-ASE output welding optic fibre end cap, suppress the reflection of fiber end face light, realize high-output power, the output of wideband A SE light.
Technical scheme as the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, the core diameter of the first active doubly clad optical fiber and the second active doubly clad optical fiber is 7～30 μ m, the inner cladding diameter is 125～250 μ m, inner cladding is shaped as abnormal shape (as hexagon, octagon, D shape etc.), the fibre core numerical aperture is 0.06～0.20, and 800～1000nm pump light absorption coefficient is greater than to 0.5dB/m; The first active doubly clad optical fiber length is 2～15 meters, and the described second active doubly clad optical fiber is pump state not, and length is 0.2～5 meter.
As the technical scheme of the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, the length of the first active doubly clad optical fiber is greater than the length of the second active doubly clad optical fiber.
As the technical scheme of the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, described bundling device type is (n+1) * 1, n >=1; The passive doubly clad optical fiber of the input of described bundling device is 7～30 μ m with the passive doubly clad optical fiber core diameter of output, and the inner cladding diameter is 125～250 μ m; The pumping input optical fibre core diameter of described bundling device is 105～400 μ m, and cladding diameter is 125～440 μ m, and numerical aperture is 0.12～0.22.
Technical scheme as the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, the pumping wavelength of described semiconductor pump laser is 800～1000nm, power output is greater than 0.5W, output tail optical fiber core diameter is 105～400 μ m, cladding diameter is 125～440 μ m, and numerical aperture is 0.12～0.22.
As the technical scheme of the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, described YDF coils into fiber turns, is placed in the light path box.
Technical scheme as the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, described optical fiber end cap comprises passive single cladded fiber, capillary glass tube and multimode fiber, one end welding of passive single cladded fiber and multimode fiber, multimode fiber is arranged in capillary glass tube, the other end fiber end face of multimode fiber grinds to form 8 ° of inclinations angle, and the plating anti-reflection film, described anti-reflection film is greater than 95% to 1064nm wave band ASE optical transmission rate; Described multimode fiber core diameter is 50～400 μ m, and cladding diameter is 125～440 μ m, and numerical aperture is 0.12～0.22, and it uses length is 2～100mm.
As the technical scheme of the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, between described bundling device, the first optical isolator, optical fiber end cap, semiconductor pump laser, the second optical isolator and the first active doubly clad optical fiber and the second active doubly clad optical fiber, be connected the welding mode that adopts.
As the technical scheme of the further optimization of the high power wideband A SE light source of above-mentioned a kind of 1064nm wave band, the first active doubly clad optical fiber and the second active doubly clad optical fiber are for mixing the active doubly clad optical fiber of ytterbium.The pumping wavelength of described semiconductor pump laser is 800 ~ 1100nm.
Describedly by the controlled YDF working temperature of Simple heating dish method, be, YDF is coiled into to fiber turns, be placed in an aluminum light path box.The light path box is placed in above the Simple heating dish and fixes, regulate and control the heating plate operating state, direct controlled light path box temperature, control the YDF working temperature then indirectly.
Described Simple heating dish is semiconductor cooling piece (TEC), and the hot junction of its potsherd one is faced up, and makes a simple heater (Simple heating dish).Open an aperture in the middle of the light path box body, a built-in thermistor temperature sensor, for monitoring and feedback light path box temperature, so its temperature is directly controlled.
The present invention adopts multimode cladding pumping technology, with near semiconductor pump laser pumping wavelength 800 ~ 1100nm, the highly doped ytterbium ion (Yb of covering pumping
3+) active doubly clad optical fiber (YDF), pump light is coupled into the YDF inner cladding by bundling device, while passing through the YDF fibre core, and Yb
3+the Ions Absorption pump light transits to high level from ground state level under its effect, along with pump power strengthens, the spontaneous radiation population increases gradually and realizes reversing, single particle independently spontaneous radiation gradually becomes the harmonious stimulated radiation of a plurality of particles, produces amplified spontaneous emission (ASE) light of higher-wattage output 1000 ~ 1150nm wave band.Especially be combined in the non-output welding one optical fiber end cap of ASE light source, to suppress the reflection of fiber end face light and to improve the fiber end face light injury threshold.And at the YDF of a bit of not pump state of ASE output welding, for smooth output ASE spectrum spectrum shape, and further by a Simple heating dish, regulate and control the YDF working temperature, improve ASE spectrum spectrum shape, can realize high power, the output of wideband A SE light of 1064nm wave band.
The present invention compared with prior art, has advantages of following main:
(4) the present invention realizes having up to the power output more than 500mW, approaches the 50nm(3dB spectral width) the ASE light source of more smooth bandwidth, its output wavelength covers 1030 ~ 1080nm wave band, and output spectrum and Output optical power are reliable and stable.
The accompanying drawing explanation
Fig. 1 is the structural representation of the high power wideband A SE light source of a kind of 1064nm wave band in execution mode.
Fig. 2 is that bundling device described in execution mode forms structural representation.
Fig. 3 is the cap of optical fiber end described in execution mode schematic diagram.
Fig. 4 is the dish of Simple heating described in execution mode work schematic diagram.
Fig. 5 is the ASE spectrogram that in execution mode, embodiment exports.
Embodiment
Below in conjunction with concrete enforcement example and accompanying drawing, explaination that the present invention is further illustrated, but be not limited to this execution mode.
As shown in Figure 1, the high-output power of 1064nm wave band, wideband A SE light source, consist of bundling device the 1, first active doubly clad optical fiber (mixing the active doubly clad optical fiber YDF of ytterbium) the 2, first optical isolator 6, optical fiber end cap 7, the active doubly clad optical fiber 9 of semiconductor pump laser 8, second, the second optical isolator 10.In the present embodiment, semiconductor pump laser 8 pumping wavelengths are 915nm, and power output is that 10W is adjustable, and the output tail optical fiber is multimode fiber 105/125 0.22NA.Its semiconductor pump laser 8 output tail optical fibers are connected with bundling device pumping input optical fibre 5, for YDF provides the pumping pumping energy.The first active doubly clad optical fiber 2 one ends are connected with the passive doubly clad optical fiber 3 of bundling device 1 output, first active doubly clad optical fiber 2 other ends are connected with optical isolator 6 inputs, and YDF coils in the light path box and is placed in above a Simple heating dish and (makes light path box body temperature controlled, and then control YDF working temperature), optical isolator 6 outputs are connected with optical fiber end cap 7.Again the passive doubly clad optical fiber 4 of bundling device 1 input is connected with the active doubly clad optical fiber 9 of a bit of not pumping second, in the present embodiment, the second active doubly clad optical fiber 9 use length are 1 meter, then second active doubly clad optical fiber 9 other ends are connected with optical isolator 10 inputs, using optical isolator 10 outputs as ASE light source output.ASE light does not have directivity, and its emission spectrum is very wide, unevenness.Its characteristics are, at the second active doubly clad optical fiber 9 of a bit of not pump state of input welding of bundling device, carry out double absorption, for smooth output ASE spectrum spectrum shape, improve the bandwidth of output 1064nm wave band ASE spectrum.Its first active doubly clad optical fiber 2 core diameters are 10 μ m, and the inner cladding diameter is that 125 μ m(are shaped as octagon), the fibre core numerical aperture is 0.08, it uses length is 7 meters.
As shown in Figure 2, bundling device 1 used in the present invention by the input passive doubly clad optical fiber 4, export passive doubly clad optical fiber 3, pumping input optical fibre 5 forms together.In the present embodiment, bundling device type used is (2+1) * 1, first by fiber stripping in the middle of 2 pumping input optical fibres, till being pulled in advance cone district diameter 20 μ m left and right, then it is close to the naked fine surface of passive doubly clad optical fiber, draw together the Zhui Zhizhui district to fuse into one, i.e. the molten pull-up technique bundling device in (2+1) * 1.Its passive doubly clad optical fiber 4 and 3 core diameter are 10 μ m, and the inner cladding diameter is 125 μ m.Pumping input optical fibre 5 is multimode fiber 105/125 0.22NA, and its core diameter is 105 μ m, and cladding diameter is 125 μ m, and numerical aperture is 0.22.
As shown in Figure 3, optical fiber end cap 7 used in the present invention is comprised of passive single cladded fiber 11, capillary glass tube 12, multimode fiber 13.Passive single cladded fiber 11 core diameters in the present embodiment are 10 μ m, and cladding diameter is 125 μ m.Passive single cladded fiber 11 1 ends and a bit of multimode fiber 13 1 ends are carried out to welding, and in the present embodiment, multimode fiber 13 use length are 3mm, and its optical parametric is 105/125 0.22NA; Multimode fiber 13 after welding is penetrated in capillary glass tube 12, and injecting glue is fixed, multimode fiber 13 other ends are ground to form to 8 degree inclinations angle, and by its fiber end face plating anti-reflection film, for suppressing the reflection of fiber end face light and improving the fiber end face light injury threshold, can increase substantially ASE power output scale, avoid producing self-excitation phenomena and form laser generation output.Described anti-reflection film is greater than 95% to 1064nm wave band ASE optical transmission rate.
As shown in Figure 4, in the present invention, the first active doubly clad optical fiber 2 is coiled into to fiber turns, coil in an aluminum light path box 14, light path box 14 is placed in above TEC ceramics water type Simple heating dish 15, by DC power supply 16 power supplies, control light path box temperature.Be characterized in: can indirectly control the YDF working temperature and change in 25 ℃ ~ 70 ℃ scopes of room temperature, in the present embodiment, working temperature is 55 ℃.Yb
3+the emission spectra of ion and sandwich layer are obvious to the absorbing state temperature influence of 1000 ~ 1100nm band of light, by regulating and controlling the YDF working temperature, can compose shape by smooth ASE spectrum, further improve the bandwidth of output 1064nm wave band ASE spectrum.
As shown in Figure 5, the ASE spectrogram result that the embodiment of the present invention is exported, visible, the 3dB spectral width is about 50nm, covers 1030 ~ 1080nm wave band, and its power output is up to 500mW, and Output optical power stability and spectral waveform have good stability.
Doubly clad optical fiber in the present invention is not only applicable to the monomode fiber of general core diameter, is applicable to large core diameter doubly clad optical fiber yet.As mentioned above, can realize preferably the present invention, above-described embodiment is only preferred embodiment of the present invention, is not intended to limit its practical range.
Claims (8)
1. the high power wideband A SE light source of a 1064nm wave band, it is characterized in that comprising semiconductor pump laser (8), bundling device (1), the first active doubly clad optical fiber (2), the first optical isolator (6), light path box (14), the controlled heating plate of temperature (15), the second active doubly clad optical fiber (9) and optical fiber end cap (7), the output tail optical fiber of described semiconductor pump laser (8) is connected with the pumping input optical fibre (5) of bundling device (1), the passive doubly clad optical fiber of output (3) of bundling device (1) is connected with the first active doubly clad optical fiber (2) one ends, first active doubly clad optical fiber (2) other end is connected with the first optical isolator (6) input, the first active doubly clad optical fiber (2) is arranged in described light path box (14), and it is upper that light path box (14) is placed in the controlled heating plate of described temperature (15), and the first optical isolator (6) output welding has optical fiber end cap (7) to be connected, the passive doubly clad optical fiber of input (4) of bundling device (1) is connected with the second active doubly clad optical fiber (9) one ends, second active doubly clad optical fiber (9) other end is connected with the second optical isolator (10) input, and the second optical isolator (10) output is as the ASE light output end, the first active doubly clad optical fiber (2) is 7～30 μ m with the core diameter of the second active doubly clad optical fiber (9), and the inner cladding diameter is 125～250 μ m, and the fibre core numerical aperture is 0.06～0.20, and 800～1000nm pump light absorption coefficient is greater than to 0.5dB/m, the first active doubly clad optical fiber (2) length is 2～15 meters, and the described second active doubly clad optical fiber (9) is pump state not, and length is 0.2～5 meter, the length of the first active doubly clad optical fiber (2) is greater than the length of the second active doubly clad optical fiber (9).
2. the high power wideband A SE light source of a kind of 1064nm wave band as claimed in claim 1 is characterized in that: described bundling device (1) type is (n+1) * 1, n >=1; The passive doubly clad optical fiber of input (4) of described bundling device (1) is 7～30 μ m with output passive doubly clad optical fiber (3) core diameter, and the inner cladding diameter is 125～250 μ m; Pumping input optical fibre (5) core diameter of described bundling device (1) is 105～400 μ m, and cladding diameter is 125～440 μ m, and numerical aperture is 0.12～0.22.
3. the high power wideband A SE light source of a kind of 1064nm wave band as claimed in claim 1, it is characterized in that: the pumping wavelength of described semiconductor pump laser (8) is 800～1000nm, power output is greater than 0.5W, output tail optical fiber core diameter is 105～400 μ m, cladding diameter is 125～440 μ m, and numerical aperture is 0.12～0.22.
4. the high power wideband A SE light source of a kind of 1064nm wave band as claimed in claim 1, it is characterized in that: the described first active doubly clad optical fiber (2) coils into fiber turns, is placed in light path box (14).
5. the high power wideband A SE light source of a kind of 1064nm wave band as claimed in claim 1, it is characterized in that: described optical fiber end cap (7) comprises passive single cladded fiber, capillary glass tube and multimode fiber, one end welding of passive single cladded fiber and multimode fiber, multimode fiber is arranged in capillary glass tube, the other end fiber end face of multimode fiber grinds to form 8 ° of inclinations angle, and the plating anti-reflection film, described anti-reflection film is greater than 95% to 1064nm wave band ASE optical transmission rate; Described multimode fiber core diameter is 50～400 μ m, and cladding diameter is 125～440 μ m, and numerical aperture is 0.12～0.22, and it uses length is 2～100mm.
6. the high power wideband A SE light source of a kind of 1064nm wave band as claimed in claim 1 is characterized in that: between described bundling device (1), the first optical isolator (6), optical fiber end cap (7), semiconductor pump laser (8), the second optical isolator (10) and the first active doubly clad optical fiber (2) and the second active doubly clad optical fiber (9), be connected the welding mode that adopts.
7. the high power wideband A SE light source of a kind of 1064nm wave band as described as claim 1 ~ 6 any one is characterized in that: the first active doubly clad optical fiber (2) with the second active doubly clad optical fiber (9) for mixing the active doubly clad optical fiber of ytterbium (2).
8. the high power wideband A SE light source of a kind of 1064nm wave band as described as claim 1 ~ 6 any one, it is characterized in that: the pumping wavelength of described semiconductor pump laser is 800 ~ 1100nm.
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| CN104769385B (en) | 2012-12-13 | 2016-04-27 | 东洋制罐集团控股株式会社 | The amount of grinding assay method of optical fibre device and device |
| CN103117502B (en) * | 2013-01-24 | 2015-09-16 | 中国电子科技集团公司第十一研究所 | The control method that fiber amplifier and fiber amplifier export |
| CN103311781A (en) * | 2013-05-28 | 2013-09-18 | 山东海富光子科技股份有限公司 | Pulse type all-fiber ASE (Amplified Spontaneous Emission) source |
| CN103269011B (en) * | 2013-05-28 | 2018-07-27 | 山东海富光子科技股份有限公司 | High-energy pulse type full-fiber ASE source |
| TWI583347B (en) * | 2013-09-14 | 2017-05-21 | 明達醫學科技股份有限公司 | Light source module of optical apparatus and operating method thereof |
| CN105140764B (en) * | 2015-09-04 | 2018-09-14 | 华南理工大学 | A kind of tunable broad band ASE light sources |
| CN110600982A (en) * | 2019-08-14 | 2019-12-20 | 武汉光迅科技股份有限公司 | Remote pumping system capable of improving pumping fiber-entering power |
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| KR100396285B1 (en) * | 1998-09-17 | 2003-11-01 | 삼성전자주식회사 | High power, broadband optical fiber |
| CA2343091C (en) * | 2000-05-25 | 2009-09-08 | Kyocera Corporation | Broadband amplified spontaneous emission light source |
| CN202616595U (en) * | 2012-02-02 | 2012-12-19 | 华南理工大学 | High power broadband amplified spontaneous emission (ASE) light source of 1064 nm wave band |
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