CN102677174B - Preparation method of Y4Si3O12 crystal whiskers - Google Patents

Preparation method of Y4Si3O12 crystal whiskers Download PDF

Info

Publication number
CN102677174B
CN102677174B CN201210140071.2A CN201210140071A CN102677174B CN 102677174 B CN102677174 B CN 102677174B CN 201210140071 A CN201210140071 A CN 201210140071A CN 102677174 B CN102677174 B CN 102677174B
Authority
CN
China
Prior art keywords
solution
y4si3o12
preparation
whisker
crystal whiskers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210140071.2A
Other languages
Chinese (zh)
Other versions
CN102677174A (en
Inventor
黄剑锋
杨柳青
曹丽云
王雅琴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suqian Yichuang Intelligent Technology Co.,Ltd.
Original Assignee
Shaanxi University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shaanxi University of Science and Technology filed Critical Shaanxi University of Science and Technology
Priority to CN201210140071.2A priority Critical patent/CN102677174B/en
Publication of CN102677174A publication Critical patent/CN102677174A/en
Application granted granted Critical
Publication of CN102677174B publication Critical patent/CN102677174B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a preparation method of Y4Si3O12 crystal whiskers, which comprises the steps of: dissolving Y (NO)3.6H2O and Na2SiO3.9H2O in anhydrous ethanol to obtain solution A; adding ethylenediaminetetraacetic acid (EDTA) and high-density polyethylene (HDPE) into the solution A and magnetically agitating for ultrasonic reaction to obtain solution B; and placing the solution B in a hydrothermal reaction kettle lined with polytetrafluoroethylene for constant-temperature reaction, conducting centrifugal separation, successively washing with distilled water and anhydrous ethanol and finally drying to obtain Y4Si3O12 crystal whiskers. The preparation method of the Y4Si3O12 crystal whiskers has the advantages that the process is simple to control, the cost is lower, the preparation temperature is low, the later-stage crystallization is not required and the possible defects that the crystal grains grow up, are coarsened or curled and the like in the later-stage heat treatment process are avoided to some extent. The appearance control can be realized and the Y4Si3O12 crystal whiskers with high purity and even grain size can be prepared.

Description

A kind of Y 4si 3o 12the preparation method of whisker
Technical field
The present invention relates to a kind of Y of morphology controllable 4si 3o 12preparation method, be specifically related to a kind of Y 4si 3o 12the preparation method of whisker.
Background technology
The physical and chemical performance of the constructional feature that yttrium silicate material possesses self and a series of excellence, as characteristics such as low elastic modulus, low high-temperature oxygen rate of permeation, low linear expansion coefficient, low vaporization at high temperature rate, resistances to chemical attack, become a kind of high performance structures material, be widely used in aerospace field.There are three kinds of crystal phase structures in yttrium silicate, is Y respectively 2siO 5, Y 2si 2o 7and Y 4si 3o 12.
At present, although about Y 4si 3o 12bibliographical information considerably less, yet there is not been reported for its lattice parameter, but because its fusing point is up to 1950 DEG C, has extremely low high-temperature oxygen rate of permeation, simultaneously Y 4si 3o 12thermal expansivity (4.31 × 10 -6K -1) and the internally coated thermal expansivity (4.5 × 10 of SiC -6k -1) closely [Sun ZQ, Zhou YC, Wang JY, et al. γ-Y 2si 2o 7, amachinable silicate ceramic:mechanical properties and machinability.TheAmerican Ceramic Society, 2007,90 (8): 2535-2541.], and Y 4si 3o 12and there is good physical chemistry consistency [Ogura Y, Kondo M, Morimoto T.Oxygenpermeability of Y between SiC 2siO 5.Materials Transactions [J], 2001,42 (6): 1124-1130.], being thus considered to SiC is one of optimal top layer material in internally coated composite coating structure, has a wide range of applications in high-temp antioxidizing material.
Huang Jianfeng etc. successfully prepare gradient Y on C/C-SiC surface 2siO 5/ Y 2si 2o 7/ Y 4si 3o 12high-temperature oxidation resistant coating [Huang JF, Zeng XR, Li HJ, et al.SiC/yttrium silicate/glass multi-layer oxidation protective coating for carbon/carbon composites [J] .Carbon, 2004,42 (11): 2356-2359.] and gradient Y 2siO 5/ Y 2si 2o 7/ Y 4si 3o 12/ glass coating high-temperature oxidation resistant coating [Huang JF, Li HJ, Zeng XR.Yttrium silicate oxidation protection coating for SiC coated carbon/carbon composites [J] .Ceramics International, 2006,32 (4): 417-421.], wherein gradient Y 2siO 5/ Y 2si 2o 7/ Y 4si 3o 12/ glass coating can in the still air of 1600 DEG C available protecting C/C matrix material 200h, coating C/C oxidation weight loss is less than 0.65%.And have document [Wang Ya-qin, Huang Jian-feng, Cao Li-Yun et al " Preparation and phase composition optimization of yttrium silicates multi-composition coating for SiC pre-coated carbon/carbon composites " J.Compos.Mater.2011,46 (4): 409-415.] report can utilize the comprehensive advantage of complex phase iridium silicate coating layer to solve coefficient of thermal expansion mismatch between inside and outside coating and the anti-oxidant Problem of Failure of coating that causes.Again according to the thought of Whisker-Reinforced Ceramics, and Y 4si 3o 12the physical chemistry consistency very good with SiC undercoat, Y 4si 3o 12whisker has very large prospect for toughness reinforcing SiC internally coated high-temperature oxidation resistant coating preparation field.
Summary of the invention
The object of the invention is to adopt solvent-thermal method to realize morphology controllable, the high-purity and Y that granularity is comparatively homogeneous 4si 3o 12the preparation method of whisker.
For achieving the above object, the technical solution used in the present invention is:
1) analytically pure Y (NO) is got 36H 2o, Na 2siO 39H 2o, according to Y: Si=1:(1.2 ~ 1.8) mol ratio be dissolved in dehydrated alcohol, be mixed with Y 3+concentration is the solution of 0.36 ~ 0.86mol/L, regulates its pH=7 ~ 9, obtain solution A by NaOH solution;
2) in solution A, Y is pressed 3+: EDTA:HEPE=1:(0.4 ~ 1.5): the mol ratio of (0.05 ~ 0.09) adds analytically pure EDTA and HDPE as template, at room temperature magnetic agitation 0.5 ~ 2h, mixes, then ultrasonic reaction 1 ~ 3h, ultrasonic power is 300 ~ 500W, obtains solution B;
3) solution B is placed in teflon-lined water heating kettle, controlling packing ratio is 40 ~ 60%, then reactor is put into isothermal reactor, at 140 ~ 210 DEG C of reaction 48 ~ 72h;
4) question response system naturally cools to room temperature, centrifugation, and successively wash 3 ~ 5 times separately with distilled water and dehydrated alcohol, finally in the electric drying oven with forced convection of 50 ~ 80 DEG C, drying obtains Y 4si 3o 12whisker.
The concentration of described step 1) NaOH solution is 3mol/L.
Y of the present invention 4si 3o 12preparation method's technology controlling and process of whisker is simple, and cost is lower, and preparation temperature is low and do not need later stage Crystallizing treatment, avoid to a certain extent may cause in Post isothermal treatment process grain growth, alligatoring or the defect such as curling.
Can morphology control be realized, high-purity and that granularity is comparatively homogeneous Y can be prepared 4si 3o 12whisker.
Due to Y 4si 3o 12fusing point up to 1950 DEG C, Y 4si 3o 12thermal expansivity (4.31 × 10 -6k -1) with the thermal expansivity (4.5 × 10 of SiC -6k -1) very close, and and have good physical chemistry consistency between SiC, the Y that the present invention prepares 4si 3o 12whisker is one of crystal whisker toughened material of optimal external coating (EC) in internally coated composite coating structure with SiC, effectively can improve the antioxidant property of coating.In addition, Y 4si 3o 12whisker has broad application prospects in electronic industry, areas of information technology.
Accompanying drawing explanation
Fig. 1 is the present invention prepared positive yttrium silicate (Y at hydrothermal temperature 140 DEG C 2siO 5) scanning electron microscope (SEM) photo of whisker.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiment 1:
1) analytically pure Y (NO) is got 36H 2o, Na 2siO 39H 2o, the mol ratio according to Y: Si=1:1.2 is dissolved in dehydrated alcohol, is mixed with Y 3+concentration is the solution of 0.36mol/L, regulates its pH=7, obtain solution A by the NaOH solution that concentration is 3mol/L;
2) in solution A, Y is pressed 3+: the mol ratio of EDTA:HEPE=1:0.4:0.05 adds analytically pure EDTA and HDPE as template, and at room temperature magnetic agitation 0.5h, mixes, then ultrasonic reaction 1h, and ultrasonic power is 500W, obtains solution B;
3) solution B is placed in teflon-lined water heating kettle, controlling packing ratio is 40%, then reactor is put into isothermal reactor, at 210 DEG C of reaction 48h;
4) question response system naturally cools to room temperature, centrifugation, and successively wash 3 times separately with distilled water and dehydrated alcohol, finally in the electric drying oven with forced convection of 50 DEG C, drying obtains Y 4si 3o 12whisker.
Embodiment 2:
1) analytically pure Y (NO) is got 36H 2o, Na 2siO 39H 2o, the mol ratio according to Y: Si=1:1.8 is dissolved in dehydrated alcohol, is mixed with Y 3+concentration is the solution of 0.86mol/L, regulates its pH=9, obtain solution A by the NaOH solution that concentration is 3mol/L;
2) in solution A, Y is pressed 3+: the mol ratio of EDTA:HEPE=1:1.5:0.09 adds analytically pure EDTA and HDPE as template, and at room temperature magnetic agitation 2h, mixes, then ultrasonic reaction 3h, and ultrasonic power is 300W, obtains solution B;
3) solution B is placed in teflon-lined water heating kettle, controlling packing ratio is 60%, then reactor is put into isothermal reactor, at 140 DEG C of reaction 72h;
4) question response system naturally cools to room temperature, centrifugation, and successively wash 5 times separately with distilled water and dehydrated alcohol, finally in the electric drying oven with forced convection of 80 DEG C, drying obtains Y 4si 3o 12whisker.
Method as seen from Figure 1 by describing in embodiment 2, available Y 4si 3o 12whisker, is characterized by diameter of whiskers and is about 10 ~ 200nm, and whisker length is about 3 ~ 5 μm.
Embodiment 3:
1) analytically pure Y (NO) is got 36H 2o, Na 2siO 39H 2o, the mol ratio according to Y: Si=1:1.5 is dissolved in dehydrated alcohol, is mixed with Y 3+concentration is the solution of 0.61mol/L, regulates its pH=8, obtain solution A by the NaOH solution that concentration is 3mol/L;
2) in solution A, Y is pressed 3+: the mol ratio of EDTA:HEPE=1:0.95:0.07 adds analytically pure EDTA and HDPE as template, and at room temperature magnetic agitation 1h, mixes, then ultrasonic reaction 2h, and ultrasonic power is 400W, obtains solution B;
3) solution B is placed in teflon-lined water heating kettle, controlling packing ratio is 50%, then reactor is put into isothermal reactor, at 175 DEG C of reaction 60h;
4) question response system naturally cools to room temperature, centrifugation, and successively wash 4 times separately with distilled water and dehydrated alcohol, finally in the electric drying oven with forced convection of 65 DEG C, drying obtains Y 4si 3o 12whisker.

Claims (1)

1. a Y 4si 3o 12the preparation method of whisker, is characterized in that:
1) analytically pure Y (NO) is got 36H 2o, Na 2siO 39H 2o, is dissolved in dehydrated alcohol according to the mol ratio of Y:Si=1:1.8, is mixed with Y 3+concentration is the solution of 0.86mol/L, regulates its pH=9, obtain solution A by the NaOH solution that concentration is 3mol/L;
2) in solution A, Y is pressed 3+: the mol ratio of EDTA:HEPE=1:1.5:0.09 adds analytically pure EDTA and HEPE as template, and at room temperature magnetic agitation 2h, mixes, then ultrasonic reaction 3h, and ultrasonic power is 300W, obtains solution B;
3) solution B is placed in teflon-lined water heating kettle, controlling packing ratio is 60%, then reactor is put into isothermal reactor, at 140 DEG C of reaction 72h;
4) question response system naturally cools to room temperature, centrifugation, and successively wash 5 times separately with distilled water and dehydrated alcohol, finally in the electric drying oven with forced convection of 80 DEG C, drying obtains Y 4si 3o 12whisker;
Y 4si 3o 12diameter of whiskers is 10 ~ 200nm, and whisker length is 3 ~ 5 μm.
CN201210140071.2A 2012-05-08 2012-05-08 Preparation method of Y4Si3O12 crystal whiskers Active CN102677174B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210140071.2A CN102677174B (en) 2012-05-08 2012-05-08 Preparation method of Y4Si3O12 crystal whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210140071.2A CN102677174B (en) 2012-05-08 2012-05-08 Preparation method of Y4Si3O12 crystal whiskers

Publications (2)

Publication Number Publication Date
CN102677174A CN102677174A (en) 2012-09-19
CN102677174B true CN102677174B (en) 2015-04-22

Family

ID=46809703

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210140071.2A Active CN102677174B (en) 2012-05-08 2012-05-08 Preparation method of Y4Si3O12 crystal whiskers

Country Status (1)

Country Link
CN (1) CN102677174B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102951921B (en) * 2012-11-14 2014-03-12 陕西科技大学 Preparation method of Y4Si3O12 whisker toughened Y2SiO5 composite coating
CN102951920B (en) * 2012-11-14 2014-04-16 陕西科技大学 Preparation method of Y4Si3O12 whisker toughened mullite composite coating
CN105780120B (en) * 2016-01-29 2018-04-17 陕西科技大学 A kind of Y2Si2O7Whisker and preparation method thereof
CN105780104B (en) * 2016-01-29 2018-06-26 陕西科技大学 A kind of Yb2Si2O7Whisker and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1904144A (en) * 2006-07-13 2007-01-31 陕西科技大学 Water heat electrophoresis deposition method of gradient iridium silicate coating layer
CN101391796A (en) * 2008-10-29 2009-03-25 陕西科技大学 Method for preparing yttrium silicate nano powder
CN101555619A (en) * 2009-02-20 2009-10-14 陕西科技大学 Preparation method of controllable yttrium silicate nano-rod

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669905B2 (en) * 1990-04-11 1994-09-07 新日本製鐵株式会社 Silicon nitride sintered body and method for manufacturing the same
KR100356266B1 (en) * 2000-04-08 2002-10-12 한국과학기술연구원 Light emitting material using cerium silicate and its manufacturaing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1904144A (en) * 2006-07-13 2007-01-31 陕西科技大学 Water heat electrophoresis deposition method of gradient iridium silicate coating layer
CN101391796A (en) * 2008-10-29 2009-03-25 陕西科技大学 Method for preparing yttrium silicate nano powder
CN101555619A (en) * 2009-02-20 2009-10-14 陕西科技大学 Preparation method of controllable yttrium silicate nano-rod

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
孙瑞雪,等."不同有机模板对羟基磷灰石晶须形貌的控制生长".《材料导报B:研究篇》.2011,第25卷(第9期),第48-54页. *
许斌生,等."微波水热法合成硅酸钇纳米晶".《人工晶体学报》.2009,第38卷(第6期),第1329-1332页. *
黄剑锋,等."声化学法可控合成硅酸钇纳米晶".《人工晶体学报》.2007,第36卷(第2期),第464-466页. *

Also Published As

Publication number Publication date
CN102677174A (en) 2012-09-19

Similar Documents

Publication Publication Date Title
CN102677174B (en) Preparation method of Y4Si3O12 crystal whiskers
Ishikawa Advances in inorganic fibers
CN103553616B (en) Growth in situ SiC nanowire strengthens C/SiC matrix material and preparation method thereof
CN101104515B (en) Preparing method of SiC nano-wire
US6121540A (en) Composite material substrate for solar cells, and solar cell
CN111943207B (en) Method for preparing fluorine-free two-dimensional material MXene simply and in pollution-free manner
CN103456603B (en) Gallium system heterogeneous semiconductor substrate is prepared method and the gallium oxide film of gallium oxide film
CN103193480A (en) Preparation method of high-performance zirconia ceramic fibers
CN116575121B (en) Monocrystalline Cr with high orientation 2 AlC material and preparation method thereof
CN108283889A (en) A kind of composite membrane, preparation method and the application in gas separation, purifying
CN104987100B (en) Infrared light reflection heat preservation charcoal felt and its application prepared by a kind of sol-gal process
CN105195029B (en) Synthesize NaA types molecular sieve crystal and the method for synthesizing NaA type molecular screen membranes
CN110343897A (en) A kind of preparation method and applications of crystalline flake graphite reinforced aluminum matrix composites
CN114790109B (en) Preparation method of zirconium tungstate/zirconium oxide composite powder with mosaic structure
CN102677144B (en) Preparation method of Y2SiO5 crystal whiskers
CN115354296A (en) Method for improving thermal conductivity of graphite film aluminum composite material
CN108101548B (en) Preparation method of graphene column and carbon nanotube fiber reinforced SiCN composite material
CN103242027A (en) Preparation method of porous mullite block
CN112030544B (en) Method for in-situ growth of silicon carbide nanowires on surface of silicon carbide fiber
CN104212168B (en) Preparation method of SiC nanowire modified CF/PI composite material
CN106966746A (en) Plasma enhancing microwave-heating prepares the method and device of ceramic matric composite
CN103114352A (en) Preparation method of sol gel of alumina fiber
CN109796220B (en) Calcium carbonate-calcium silicate-silicon dioxide aerogel multi-layer composite heat-insulating material and preparation method thereof
CN106083064A (en) A kind of preparation method of surface folding boron carbon nitrogen fiber
CN114874026A (en) Preparation method of high-strength fiber composite zirconia foamed ceramic

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201130

Address after: 808, floor 8, building B, business center, gangzhilong science and Technology Park, No. 6, Qinglong Road, Qinghua community, Longhua street, Longhua District, Shenzhen City, Guangdong Province

Patentee after: Shenzhen Pengbo Information Technology Co.,Ltd.

Address before: 710021 Shaanxi province Xi'an Weiyang University Park No. 1

Patentee before: SHAANXI University OF SCIENCE & TECHNOLOGY

Effective date of registration: 20201130

Address after: Yongchang Fortune Plaza 3004, Sihong County, Suqian City, Jiangsu Province

Patentee after: Suqian Yichuang Intelligent Technology Co.,Ltd.

Address before: 808, floor 8, building B, business center, gangzhilong science and Technology Park, No. 6, Qinglong Road, Qinghua community, Longhua street, Longhua District, Shenzhen City, Guangdong Province

Patentee before: Shenzhen Pengbo Information Technology Co.,Ltd.