CN115611642B - SiC whisker with BN coating on surface and molten salt method preparation method thereof - Google Patents
SiC whisker with BN coating on surface and molten salt method preparation method thereof Download PDFInfo
- Publication number
- CN115611642B CN115611642B CN202211629450.8A CN202211629450A CN115611642B CN 115611642 B CN115611642 B CN 115611642B CN 202211629450 A CN202211629450 A CN 202211629450A CN 115611642 B CN115611642 B CN 115611642B
- Authority
- CN
- China
- Prior art keywords
- coating
- molten salt
- sic whiskers
- sic
- whiskers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 86
- 239000011248 coating agent Substances 0.000 title claims abstract description 82
- 150000003839 salts Chemical class 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 14
- 239000011812 mixed powder Substances 0.000 claims abstract description 11
- 238000000967 suction filtration Methods 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims description 23
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 16
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 16
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 9
- 235000011164 potassium chloride Nutrition 0.000 claims description 8
- 239000001103 potassium chloride Substances 0.000 claims description 8
- 239000011780 sodium chloride Substances 0.000 claims description 8
- 238000005336 cracking Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229920000877 Melamine resin Polymers 0.000 claims description 4
- 229910021538 borax Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000004328 sodium tetraborate Substances 0.000 claims description 4
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical group N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000009827 uniform distribution Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 6
- 239000000835 fiber Substances 0.000 abstract description 4
- 238000005728 strengthening Methods 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 58
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 57
- 239000000126 substance Substances 0.000 description 8
- 230000002787 reinforcement Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011153 ceramic matrix composite Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62844—Coating fibres
- C04B35/62857—Coating fibres with non-oxide ceramics
- C04B35/62865—Nitrides
- C04B35/62868—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/6268—Thermal treatment of powders or mixtures thereof other than sintering characterised by the applied pressure or type of atmosphere, e.g. in vacuum, hydrogen or a specific oxygen pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明公开了一种表面具有BN涂层的SiC晶须及其熔盐法制备方法,包括以下步骤:将熔盐、生成BN的反应物、SiC晶须按一定比例充分混合,得到混合均匀的粉体;然后将混合均匀的粉体进行升温烧结处理,使其充分反应后,得到混合熔盐的覆有BN涂层的SiC晶须,将混合熔盐的覆有BN涂层的SiC晶须经过水洗,将表面附着的熔盐洗掉,得到了表面覆有BN涂层的SiC晶须;最后将抽滤得到的粉末进行烘干,得到表面具有BN涂层的SiC晶须。本发明的方法适用于SiC晶须及短切纤维等表面BN涂层的制备,所得到的覆有鳞片状BN的SiC晶须可以用于SiC基复合材料的增强增韧。
The invention discloses a SiC whisker with a BN coating on the surface and a preparation method thereof by a molten salt method. powder; then heat-up and sinter the uniformly mixed powder to make it fully react to obtain SiC whiskers coated with BN coating mixed with molten salt, and SiC whiskers coated with BN coated with mixed molten salt After washing with water, the molten salt attached to the surface is washed off to obtain SiC whiskers with a BN coating on the surface; finally, the powder obtained by suction filtration is dried to obtain SiC whiskers with a BN coating on the surface. The method of the invention is suitable for the preparation of BN coatings on the surface of SiC whiskers and chopped fibers, and the obtained SiC whiskers covered with scaly BN can be used for strengthening and toughening SiC-based composite materials.
Description
技术领域technical field
本发明总体地涉及复合材料领域,具体涉及一种表面具有BN涂层的SiC晶须及其熔盐法制备方法。The invention generally relates to the field of composite materials, in particular to a SiC whisker with a BN coating on the surface and a preparation method thereof by a molten salt method.
背景技术Background technique
随着科学技术的发展,科研工作者对复合材料的研究也层出不穷。With the development of science and technology, scientific research workers have also emerged in an endless stream of research on composite materials.
陶瓷基复合材料因其优异的耐高温、耐腐蚀和耐磨损等性能被广泛应用于航空航天领域。其中,SiC晶须具有高强度、高模量和耐高温等性能被广泛用作陶瓷基复合材料的增强材料。然而,在高温烧结过程中,短切纤维或晶须容易与陶瓷基体形成界面结合,使复合材料会表现为较差的力学性能。为了调整增强体和基体之间的界面结合强度,使基体裂纹在界面处发生偏转,界面能将载荷从基体转移到增强体上,制备界面层是必要的。Ceramic matrix composites are widely used in the aerospace field because of their excellent high temperature resistance, corrosion resistance and wear resistance. Among them, SiC whiskers have high strength, high modulus and high temperature resistance, and are widely used as reinforcement materials for ceramic matrix composites. However, during high-temperature sintering, chopped fibers or whiskers are easy to form interfacial bonds with the ceramic matrix, so that the composite material will exhibit poor mechanical properties. In order to adjust the interfacial bonding strength between the reinforcement and the matrix so that the matrix cracks are deflected at the interface and the interface can transfer the load from the matrix to the reinforcement, it is necessary to prepare an interface layer.
BN涂层作为一种能够提升SiC晶须性能的涂层具有以下优点:As a coating that can improve the performance of SiC whiskers, BN coating has the following advantages:
1、抗氧化性较好。相比于PyC,BN界面涂层具有更好的抗氧化性,在中等温度区域(800℃)左右保持化学稳定性,在高温下BN界面涂层具有自润滑性能。1. Good oxidation resistance. Compared with PyC, BN interface coating has better oxidation resistance, maintains chemical stability in the middle temperature region (800 °C), and BN interface coating has self-lubricating properties at high temperatures.
2、增韧效果较好。BN作为增强体,在高温条件下BN会氧化生成B2O3,从BN到B2O3体积略微膨胀,一方面可以填补裂缝;另一方面,B2O3会密封裂缝并阻止裂纹进一步扩展,可以增强复合材料的断裂韧性。2. The toughening effect is better. As a reinforcement, BN will be oxidized to B 2 O 3 under high temperature conditions, and the volume will expand slightly from BN to B 2 O 3 , which can fill cracks on the one hand; on the other hand, B 2 O 3 will seal cracks and prevent cracks from further developing. extension, which can enhance the fracture toughness of the composite.
3、耐化学腐蚀性强。3. Strong chemical corrosion resistance.
目前,BN涂层的制备方法主要有两种,即CVD法和浸渍裂解法。然而现有技术中的BN涂层沉积工艺仍存在如下不足: CVD法制备涂层工艺多用于在SiC纤维上沉积,在SiC晶须上应用较少。CVD法制备涂层对混合气体的比例、沉积时间和压力等条件都有很高的要求,且沉积的速度会对涂层的均匀形成造成影响。而先驱体浸渍裂解法的制备工艺虽然简单,但生成的涂层缺陷较多,且浸渍裂解这种制备工艺对原始的增强体也有一定的损伤。相较于前两种方法,本发明提供的利用熔盐法在SiC晶须上制备BN涂层具有成本低、效率高等优点,难点在于BN涂层片状结构,故在控制涂层的包覆程度有些困难,但通过控制熔盐、反应物与SiC晶须的质量比以及保温时间可以控制涂层的包覆情况,同时温度的改变会影响BN的结晶度,温度升高,BN的结晶度升高,会使生成的BN更好地附在SiC晶须上。At present, there are mainly two methods for preparing BN coatings, namely CVD method and dipping cracking method. However, the BN coating deposition process in the prior art still has the following deficiencies: The coating process prepared by CVD method is mostly used for deposition on SiC fibers, and less applied to SiC whiskers. The coating prepared by the CVD method has high requirements on the ratio of the mixed gas, deposition time and pressure, and the deposition speed will affect the uniform formation of the coating. Although the preparation process of the precursor dipping and pyrolysis method is simple, the resulting coating has many defects, and the dipping and pyrolysis preparation process also has a certain degree of damage to the original reinforcement. Compared with the first two methods, the preparation of BN coating on SiC whiskers by the molten salt method provided by the present invention has the advantages of low cost and high efficiency. The difficulty lies in the flake structure of BN coating, so in controlling the coating The degree is somewhat difficult, but the coating coating can be controlled by controlling the mass ratio of molten salt, reactants and SiC whiskers and the holding time. At the same time, the change of temperature will affect the crystallinity of BN. As the temperature rises, the crystallinity of BN Increased, the generated BN will be better attached to the SiC whiskers.
发明内容Contents of the invention
本发明是要解决的技术问题是克服现有技术的不足,提供一种表面具有BN涂层的SiC晶须及其熔盐法制备方法,所得表面具有BN涂层的SiC晶须中,BN涂层在晶须表面形成了均匀界面,本发明制备方法效率高、成本低。The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, and provide a SiC whisker with a BN coating on the surface and a preparation method thereof by a molten salt method. In the SiC whisker with a BN coating on the obtained surface, the BN coating The layer forms a uniform interface on the whisker surface, and the preparation method of the invention has high efficiency and low cost.
本发明的技术方案是,本发明首先提供一种表面具有BN涂层的SiC晶须,所述BN涂层通过熔盐法在SiC晶须表面形成,所述BN涂层在SiC晶须表面呈鳞片状均布,BN涂层的BN为六方氮化硼结构(h-BN),BN涂层的厚度在10~50nm范围内。The technical solution of the present invention is that the present invention firstly provides a SiC whisker with a BN coating on the surface, the BN coating is formed on the surface of the SiC whisker by a molten salt method, and the BN coating is formed on the surface of the SiC whisker. The scales are evenly distributed, the BN of the BN coating is a hexagonal boron nitride structure (h-BN), and the thickness of the BN coating is in the range of 10-50nm.
本发明同时提供了上述表面具有BN涂层的SiC晶须的熔盐法制备方法,包括以下步骤:The present invention also provides a molten salt method for preparing the SiC whiskers with a BN coating on the surface, comprising the following steps:
一、粉体混合:将熔盐、生成BN的反应物、SiC晶须按一定比例球磨混合,得到混合均匀的粉体;1. Powder mixing: ball mill and mix molten salt, BN-forming reactants, and SiC whiskers in a certain proportion to obtain uniformly mixed powder;
二、烧结处理:将步骤一得到的混合均匀的粉体进行升温烧结处理,使其充分反应后,得到混合熔盐的覆有BN涂层的SiC晶须;2. Sintering treatment: heat up and sinter the homogeneously mixed powder obtained in step 1 to allow it to fully react to obtain SiC whiskers coated with BN coating of mixed molten salt;
三、抽滤处理:将步骤二得到的所述混合熔盐的覆有BN涂层的SiC晶须进行水洗,将表面附着的熔盐洗掉,得到了表面覆有BN涂层的SiC晶须;3. Suction filtration treatment: wash the SiC whiskers coated with BN coating of the mixed molten salt obtained in step 2, wash off the molten salt attached to the surface, and obtain SiC whiskers coated with BN coating on the surface ;
四、烘干处理:将步骤三得到的表面覆有BN涂层的SiC晶须进行烘干后,得到表面具有BN涂层的SiC晶须。4. Drying treatment: after drying the SiC whiskers with a BN coating on the surface obtained in step 3, SiC whiskers with a BN coating on the surface are obtained.
进一步的,上述步骤一中熔盐为氯化钠和氯化钾,生成BN的反应物为三聚氰胺和硼砂。Further, the molten salt in the above step 1 is sodium chloride and potassium chloride, and the reactants for generating BN are melamine and borax.
进一步的,上述步骤一中:三聚氰胺中氮元素与硼砂中硼元素的摩尔比为(1:1)~(4:1);氯化钠与氯化钾的质量比为11:14;生成BN的反应物与熔盐的质量比为(1:1)~(1:2);反应物和熔盐的总质量与SiC晶须的质量比为(5:1)~(10:1)。Further, in the above step 1: the molar ratio of nitrogen in melamine to boron in borax is (1:1)~(4:1); the mass ratio of sodium chloride to potassium chloride is 11:14; BN is generated The mass ratio of reactants to molten salt is (1:1)~(1:2); the mass ratio of the total mass of reactants and molten salt to SiC whiskers is (5:1)~(10:1).
进一步的,上述步骤二中的升温烧结处理操作方法为:在氮气气氛下,按照3-5℃/min的升温速率,将混合均匀的粉体升温至900-1200℃,保温1-4小时,然后在氮气气氛下冷却至室温,所述升温烧结处理采用的设备为真空裂解炉。Further, the heating and sintering operation method in the above step 2 is as follows: under a nitrogen atmosphere, at a heating rate of 3-5°C/min, heat the uniformly mixed powder to 900-1200°C and keep it warm for 1-4 hours, Then cool to room temperature under a nitrogen atmosphere, and the equipment used in the temperature-raising sintering treatment is a vacuum cracking furnace.
进一步的,上述步骤三中的抽滤处理的操作方法为:将步骤二中得到的产物置于去离子水中混合均匀,然后使用抽滤装置过滤掉液体,重复4-5次。Further, the operation method of the suction filtration treatment in the above step 3 is: put the product obtained in the step 2 into deionized water and mix evenly, then use a suction filtration device to filter out the liquid, and repeat 4-5 times.
进一步的,上述步骤四中烘干温度为80-90℃。Further, the drying temperature in the above step 4 is 80-90°C.
本发明相比现有技术的先进性在于:Compared with the prior art, the present invention has the following advantages:
1、本发明提供了具有表面界面层BN的碳化硅晶须,均匀分布的BN层能改善碳化硅晶须的物化性能,拓展其应用领域。1. The present invention provides silicon carbide whiskers with a surface interface layer of BN. The evenly distributed BN layer can improve the physical and chemical properties of silicon carbide whiskers and expand its application field.
2、本发明碳化硅晶须表面的BN涂层微观下呈现鳞片状,与现有技术中SiC纤维上制备的平铺均匀的BN涂层不同,六方BN呈现鳞片状,未经BN涂层处理的晶须在与粉末烧结过程中会与粉末结合在一起失去其原本增强增韧的效果,在晶须表面制备BN涂层后,在复合材料受到外力时,裂纹在遇到涂层时会发生偏转,从而增强增韧,因此,附着鳞片状BN涂层的SiC晶须可以丰富SiC晶须在陶瓷基复合材料增强增韧领域的应用。2. The BN coating on the surface of silicon carbide whiskers of the present invention presents a scaly shape microscopically, which is different from the uniformly spread BN coating prepared on SiC fibers in the prior art. The hexagonal BN presents a scaly shape without BN coating treatment The whiskers will be combined with the powder during the sintering process to lose its original strengthening and toughening effect. After the BN coating is prepared on the surface of the whiskers, when the composite material is subjected to external force, cracks will occur when it encounters the coating. Therefore, the SiC whiskers attached to the scaly BN coating can enrich the application of SiC whiskers in the field of reinforcement and toughening of ceramic matrix composites.
3、本发明的制备方法中,通过调控升温烧结的速率和温度范围来控制所生成的h-BN的结晶度和晶粒尺寸,本申请的温度范围能使BN的晶粒在一定程度上长大,同时保证结晶度得到最优控制,从而生成的鳞片状BN越多,低于900℃的烧结将不利于BN涂层结晶,高于1200℃的烧结会使生成的BN涂层晶粒生长过大,使BN层失去鳞片的毛刺感。3. In the preparation method of the present invention, the crystallinity and grain size of the generated h-BN are controlled by adjusting and controlling the rate and temperature range of heating and sintering, and the temperature range of the present application can make the crystal grains of BN grow to a certain extent Larger, while ensuring that the crystallinity is optimally controlled, so that the more scaly BN is generated, the sintering below 900°C will not be conducive to the crystallization of the BN coating, and the sintering above 1200°C will cause the grain growth of the generated BN coating If it is too large, the BN layer loses the burr feeling of scales.
4、本发明采用熔盐法制备BN涂层,生成物中盐可用去离子水清洗,产物转化率更高。4. The present invention adopts the molten salt method to prepare the BN coating, and the salt in the product can be washed with deionized water, and the conversion rate of the product is higher.
附图说明Description of drawings
从下面结合附图对本发明实施例的详细描述中,本发明的这些和/或其它方面和优点将变得更加清楚并更容易理解,其中:These and/or other aspects and advantages of the present invention will become clearer and easier to understand from the following detailed description of the embodiments of the present invention in conjunction with the accompanying drawings, wherein:
图1为本发明制备方法流程示意图;Fig. 1 is the schematic flow chart of preparation method of the present invention;
图2为本发明实施例1所制备的覆有BN涂层的SiC晶须SEM图片;Fig. 2 is the SEM picture of the SiC whisker covered with BN coating prepared in Example 1 of the present invention;
图3为本发明实施例2所制备的覆有BN涂层的SiC晶须SEM图片;Fig. 3 is the SiC whisker SEM picture that is covered with BN coating prepared in the embodiment 2 of the present invention;
图4为本发明实施例1和2制备的覆有BN涂层的SiC晶须的XRD对比图;Fig. 4 is the XRD contrast figure of the SiC whisker that is covered with BN coating that the embodiment of the present invention 1 and 2 prepare;
图5为本发明实施例3所制备的覆有BN涂层的SiC晶须SEM图片;Fig. 5 is the SiC whisker SEM picture that is covered with BN coating prepared in the embodiment 3 of the present invention;
图6为本发明实施例4所制备的覆有BN涂层的SiC晶须SEM图片;Fig. 6 is the SiC whisker SEM picture that is covered with BN coating prepared in the embodiment 4 of the present invention;
图7为本发明实施例4和5制备的覆有BN涂层的SiC晶须的XRD对比图。Fig. 7 is a comparison chart of XRD of SiC whiskers coated with BN coating prepared in Examples 4 and 5 of the present invention.
具体实施方式Detailed ways
为了使本领域技术人员更好地理解本发明,下面结合附图和具体实施方式对本发明作进一步详细说明。In order to enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
实施例1:Example 1:
本实施例在SiC晶须表面制备BN涂层的方法,其流程如图1所示,按照以下步骤进行:In this embodiment, the method for preparing a BN coating on the surface of SiC whiskers is shown in Figure 1, and is carried out according to the following steps:
一、粉体混合:取长度大约20-40μm、直径50-200nm的β-SiC晶须4g;熔盐共10g(氯化钠4.4g、氯化钾5.6g);生成BN的反应物共10g(B与N的物质的量之比为1:1),将上述物质混合、搅拌、研磨混合均匀,得到合均匀的粉末。1. Powder mixing: Take 4g of β-SiC whiskers with a length of about 20-40μm and a diameter of 50-200nm; a total of 10g of molten salt (sodium chloride 4.4g, potassium chloride 5.6g); a total of 10g of reactants for forming BN (The ratio of the amount of B to N is 1:1), mix, stir, and grind the above-mentioned substances to obtain a uniform powder.
二、烧结处理:将步骤一混合均匀的粉末进行烧结,烧结设备为真空裂解炉,烧结工艺条件为:在氮气气氛条件下,以5℃/min的速率升温至900℃,保温3小时,保持氮气气氛随炉冷却,得到熔盐包覆的表面具有BN涂层的SiC晶须。2. Sintering treatment: Sinter the uniformly mixed powder in step 1. The sintering equipment is a vacuum cracking furnace. The sintering process conditions are: under nitrogen atmosphere, the temperature is raised to 900°C at a rate of 5°C/min, and the temperature is kept for 3 hours. The nitrogen atmosphere is cooled with the furnace to obtain molten salt coated SiC whiskers with a BN coating on the surface.
三、抽滤处理:将步骤二得到的混合着熔盐的覆有BN涂层的SiC晶须经过去离子水水洗、抽滤4次,将表面附着的盐洗掉,得到了表面附着BN涂层的SiC晶须;3. Suction filtration treatment: the SiC whiskers coated with BN coating mixed with molten salt obtained in step 2 were washed with deionized water and suction filtered 4 times, and the salt attached to the surface was washed off, and the BN coating coated with the surface was obtained. layer of SiC whiskers;
四、烘干处理:将步骤三得到的粉末在烘箱中85℃条件下烘干,可以得到最终的表面附着BN涂层的SiC晶须。4. Drying treatment: Dry the powder obtained in step 3 in an oven at 85° C. to obtain the final SiC whiskers with BN coating on the surface.
实施例2:Example 2:
本实施例在SiC晶须表面制备BN涂层的方法,按照以下步骤进行:In this embodiment, the method for preparing a BN coating on the surface of SiC whiskers is carried out according to the following steps:
一、粉体混合:1. Powder mixing:
取长度大约20-40μm,直径50-200nm的β-SiC晶须4g;熔盐共10g(氯化钠4.4g、氯化钾5.6g);生成BN的反应物共10g(B与N的物质的量之比为1:1),将上述物质混合、搅拌研磨混合均匀。Take 4g of β-SiC whiskers with a length of about 20-40μm and a diameter of 50-200nm; a total of 10g of molten salt (sodium chloride 4.4g, potassium chloride 5.6g); a total of 10g of reactants to form BN (substances of B and N The ratio of the amount is 1:1), mix the above materials, stir and grind to mix evenly.
二、烧结处理:2. Sintering treatment:
将步骤一混合均匀的粉末进行烧结,烧结设备为真空裂解炉,烧结工艺条件为:在氮气气氛条件下,以5℃/min的速率升温至1200℃,保温3小时,保持氮气气氛随炉冷却,得到熔盐包覆的表面具有BN涂层的SiC晶须。Sinter the uniformly mixed powder in step 1. The sintering equipment is a vacuum cracking furnace. The sintering process conditions are: under nitrogen atmosphere, heat up to 1200°C at a rate of 5°C/min, keep the temperature for 3 hours, and keep the nitrogen atmosphere to cool with the furnace , to obtain molten salt-coated SiC whiskers with BN coating on the surface.
三、抽滤处理:将步骤二得到的混合着熔盐的覆有BN涂层的SiC晶须经过去离子水水洗、抽滤4次,将表面附着的盐洗掉,得到了表面附着BN涂层的SiC晶须;3. Suction filtration treatment: the SiC whiskers coated with BN coating mixed with molten salt obtained in step 2 were washed with deionized water and suction filtered 4 times, and the salt attached to the surface was washed off, and the BN coating coated with the surface was obtained. layer of SiC whiskers;
四、烘干处理:将步骤三得到的粉末在烘箱中85℃条件下烘干,可以得到最终的表面附着BN涂层的SiC晶须。4. Drying treatment: Dry the powder obtained in step 3 in an oven at 85° C. to obtain the final SiC whiskers with BN coating on the surface.
实施例1和实施例2的SEM图如图1、2所示,可以看出在900℃及1200℃条件下在SiC晶须表面均有BN涂层产生。相较于900℃,1200℃产生的片状BN涂层更为均匀,毛刺感更重,说明升高温度有利于生成BN涂层。根据图3中二者的XRD图像可以看出,生成的BN为h-BN,且温度升高,BN的结晶性越好,BN的衍射峰越明显。The SEM images of Example 1 and Example 2 are shown in Figures 1 and 2. It can be seen that there is a BN coating on the surface of SiC whiskers at 900°C and 1200°C. Compared with 900°C, the flaky BN coating produced at 1200°C is more uniform and has a heavier burr feeling, indicating that increasing the temperature is conducive to the formation of BN coatings. According to the XRD images of the two in Figure 3, it can be seen that the generated BN is h-BN, and the higher the temperature, the better the crystallinity of BN, and the more obvious the diffraction peak of BN.
实施例3:Example 3:
本实施例在SiC晶须表面制备BN涂层的方法,按照以下步骤进行:In this embodiment, the method for preparing a BN coating on the surface of SiC whiskers is carried out according to the following steps:
一、粉体混合:取长度大约20-40μm,直径50-200nm的β-SiC晶须3.33g、熔盐共10g(氯化钠4.4g、氯化钾5.6g);生成BN的反应物共10g(B与N的物质的量之比为1:1),将上述物质混合、搅拌研磨混合均匀。1. Powder mixing: Take 3.33g of β-SiC whiskers with a length of about 20-40μm and a diameter of 50-200nm, and a total of 10g of molten salt (4.4g of sodium chloride and 5.6g of potassium chloride); 10g (the ratio of the amount of B to N is 1:1), mix the above substances, stir and grind them evenly.
二、烧结处理:将步骤一混合均匀的粉末进行烧结,烧结设备为真空裂解炉,烧结工艺条件为:在氮气气氛条件下,以5℃/min的速率升温至1200℃,保温1小时,保持氮气气氛随炉冷却,得到熔盐包覆的表面具有BN涂层的SiC晶须。2. Sintering treatment: sinter the uniformly mixed powder in step 1. The sintering equipment is a vacuum cracking furnace. The sintering process conditions are: under nitrogen atmosphere, heat up to 1200°C at a rate of 5°C/min, keep warm for 1 hour, and keep The nitrogen atmosphere is cooled with the furnace to obtain molten salt coated SiC whiskers with a BN coating on the surface.
三、抽滤处理:将步骤二得到的混合着熔盐的覆有BN涂层的SiC晶须经过去离子水水洗、抽滤4次,将表面附着的盐洗掉,得到了表面附着BN涂层的SiC晶须;3. Suction filtration treatment: the SiC whiskers coated with BN coating mixed with molten salt obtained in step 2 were washed with deionized water and suction filtered 4 times, and the salt attached to the surface was washed off, and the BN coating coated with the surface was obtained. layer of SiC whiskers;
四、烘干处理:将步骤三得到的粉末在烘箱中85℃条件下烘干,可以得到最终的表面附着BN涂层的SiC晶须。4. Drying treatment: Dry the powder obtained in step 3 in an oven at 85° C. to obtain the final SiC whiskers with BN coating on the surface.
实施例4:Example 4:
本实施例在SiC晶须表面制备BN涂层的方法,按照以下步骤进行:In this embodiment, the method for preparing a BN coating on the surface of SiC whiskers is carried out according to the following steps:
粉体混合:取长度大约20-40μm,直径50-200nm的β-SiC晶须3.33g、熔盐共10g(氯化钠4.4g、氯化钾5.6g);反应物共10g(B与N的物质的量之比为1:1),将上述物质混合、搅拌研磨混合均匀。Powder mixing: Take 3.33g of β-SiC whiskers with a length of about 20-40μm and a diameter of 50-200nm, a total of 10g of molten salt (sodium chloride 4.4g, potassium chloride 5.6g); a total of 10g of reactants (B and N The ratio of the amount of the substances is 1:1), the above substances are mixed, stirred and ground to mix evenly.
烧结处理:将步骤一混合均匀的粉末进行烧结,烧结设备为真空裂解炉,烧结工艺条件为:在氮气气氛条件下,以5℃/min的速率升温至1200℃,保温4小时,保持氮气气氛随炉冷却,得到熔盐包覆的表面具有BN涂层的SiC晶须。Sintering treatment: Sinter the uniformly mixed powder in step 1. The sintering equipment is a vacuum cracking furnace. The sintering process conditions are: under the condition of nitrogen atmosphere, the temperature is raised to 1200°C at a rate of 5°C/min, kept for 4 hours, and the nitrogen atmosphere is maintained. After cooling in the furnace, SiC whiskers coated with molten salt and having a BN coating on the surface are obtained.
三、抽滤处理:将步骤二得到的混合着熔盐的覆有BN涂层的SiC晶须经过去离子水水洗、抽滤4次,将表面附着的盐洗掉,得到了表面附着BN涂层的SiC晶须;3. Suction filtration treatment: the SiC whiskers coated with BN coating mixed with molten salt obtained in step 2 were washed with deionized water and suction filtered 4 times, and the salt attached to the surface was washed off, and the BN coating coated with the surface was obtained. layer of SiC whiskers;
四、烘干处理:将步骤三得到的粉末在烘箱中85℃条件下烘干,可以得到最终的表面附着BN涂层的SiC晶须。4. Drying treatment: Dry the powder obtained in step 3 in an oven at 85° C. to obtain the final SiC whiskers with BN coating on the surface.
实施例3和实施例4的SEM图像如图5、6所示,可以看出,保温时间主要影响晶粒的长大情况,保温1小时时,表面附着的BN涂层晶粒较小,表现为小片状, SiC晶须整体表面毛刺感明显;保温4小时时,BN的晶粒显著长大,由于晶粒长大包覆整个SiC晶须,因此在SiC晶须整体表面显示不出毛刺感。根据图7中二者的XRD图,可以看出二者均有h-BN生成,且保温4小时的BN衍射峰更加明显。The SEM images of Example 3 and Example 4 are shown in Figures 5 and 6. It can be seen that the holding time mainly affects the growth of the crystal grains. When the heat preservation time is 1 hour, the BN coating grains attached to the surface are smaller, showing It is in the form of small flakes, and the overall surface of the SiC whiskers has obvious burrs; when the temperature is kept for 4 hours, the grains of BN grow significantly, and because the grains grow and cover the entire SiC whiskers, there is no burrs on the overall surface of the SiC whiskers feel. According to the XRD patterns of the two in Figure 7, it can be seen that both of them have h-BN formation, and the BN diffraction peak after 4 hours of incubation is more obvious.
以上已经描述了本发明的各实施例,上述说明是示例性的,并非穷尽性的,并且也不限于所披露的各实施例。在不偏离所说明的各实施例的范围和精神的情况下,对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。因此,本发明的保护范围应该以权利要求的保护范围为准。Having described various embodiments of the present invention, the foregoing description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and alterations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211629450.8A CN115611642B (en) | 2022-12-19 | 2022-12-19 | SiC whisker with BN coating on surface and molten salt method preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211629450.8A CN115611642B (en) | 2022-12-19 | 2022-12-19 | SiC whisker with BN coating on surface and molten salt method preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115611642A CN115611642A (en) | 2023-01-17 |
CN115611642B true CN115611642B (en) | 2023-03-31 |
Family
ID=84880849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202211629450.8A Active CN115611642B (en) | 2022-12-19 | 2022-12-19 | SiC whisker with BN coating on surface and molten salt method preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115611642B (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5153000A (en) * | 1974-11-05 | 1976-05-11 | Sumitomo Chemical Co | Chitsukahososeni seikeibutsu oyobi fuirumuno seizoho |
US4794044A (en) * | 1986-12-10 | 1988-12-27 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method for surface treatment |
EP0356267A1 (en) * | 1988-06-27 | 1990-02-28 | Rhone-Poulenc Chimie | Material based on boron nitride, process of producing the same and use as reinforcing agent |
JPH02252660A (en) * | 1989-03-24 | 1990-10-11 | Takeo Oki | Calcined compact of hardly calcinable powder, its abrasive grain and grindstone and production thereof |
JPH04268079A (en) * | 1991-02-19 | 1992-09-24 | Nachi Fujikoshi Corp | Coated parts and production thereof |
JP2000264741A (en) * | 1999-03-16 | 2000-09-26 | Japan Science & Technology Corp | Silicon carbide-base ceramic composite material and its product |
CN112062567A (en) * | 2020-09-17 | 2020-12-11 | 中国科学院上海应用物理研究所 | Method for preparing zirconium-yttrium-doped barium ceria powder by using molten salt and powder obtained therefrom |
FR3115785A1 (en) * | 2020-11-03 | 2022-05-06 | Safran Ceramics | Formation of metallic carbide on fibers by the molten salt method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3115784B1 (en) * | 2020-11-03 | 2023-03-31 | Safran Ceram | Formation of boron nitride on fibers by the molten salt method |
CN112521156B (en) * | 2021-02-18 | 2021-04-27 | 中国人民解放军国防科技大学 | Hybrid matrix SiCf/SiC composite material and preparation method thereof |
-
2022
- 2022-12-19 CN CN202211629450.8A patent/CN115611642B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5153000A (en) * | 1974-11-05 | 1976-05-11 | Sumitomo Chemical Co | Chitsukahososeni seikeibutsu oyobi fuirumuno seizoho |
US4794044A (en) * | 1986-12-10 | 1988-12-27 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method for surface treatment |
EP0356267A1 (en) * | 1988-06-27 | 1990-02-28 | Rhone-Poulenc Chimie | Material based on boron nitride, process of producing the same and use as reinforcing agent |
JPH02252660A (en) * | 1989-03-24 | 1990-10-11 | Takeo Oki | Calcined compact of hardly calcinable powder, its abrasive grain and grindstone and production thereof |
JPH04268079A (en) * | 1991-02-19 | 1992-09-24 | Nachi Fujikoshi Corp | Coated parts and production thereof |
JP2000264741A (en) * | 1999-03-16 | 2000-09-26 | Japan Science & Technology Corp | Silicon carbide-base ceramic composite material and its product |
CN112062567A (en) * | 2020-09-17 | 2020-12-11 | 中国科学院上海应用物理研究所 | Method for preparing zirconium-yttrium-doped barium ceria powder by using molten salt and powder obtained therefrom |
FR3115785A1 (en) * | 2020-11-03 | 2022-05-06 | Safran Ceramics | Formation of metallic carbide on fibers by the molten salt method |
Also Published As
Publication number | Publication date |
---|---|
CN115611642A (en) | 2023-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105506579B (en) | A kind of preparation method of graphene coated silicon carbide nanometer line | |
CN105237025B (en) | A kind of C/C SiC MoSi2The preparation method of ceramic matric composite | |
KR101810238B1 (en) | A method for coating oxidation protective layer for carbon/carbon composite, a carbon heater, and cooker | |
CN107522487B (en) | Graphite material with SiC doped layer and preparation method thereof | |
CN115058885B (en) | A carbon fiber cloth surface-oriented SiC nanowire array and its preparation method | |
JP3793157B2 (en) | MoSi2-Si3N4 composite coating layer and method for producing the same | |
CN110668447B (en) | Synthesis method of silicon carbide nanowire | |
CN106673708B (en) | A kind of method that surface of carbon/carbon composite prepares silicon carbide nanometer line porous layer | |
Niu et al. | Synthesis and characterization of nano-scale and submicro-scale silicon carbide whiskers on C/C composites | |
CN104926343B (en) | Aluminum silicate fiber reinforced oxide ceramic containing interface phase and preparation method thereof | |
CN106631161B (en) | A method of composite coating resistant to high temperature oxidation is prepared on carbon-based material surface | |
CN1267341C (en) | Carbon/carbon composite material based on oriented nano carbon tube and its preparation process | |
CN110387583A (en) | A kind of method and SiC whisker that utilize interface reaction to prepare SiC whisker | |
CN114538964B (en) | SiC-Si coated carbon/carbon composite material surface rich in MoSi2 high temperature anti-oxidation coating and preparation method | |
CN101634003B (en) | Preparation method of titanium-coated silicon carbide whiskers | |
CN115611642B (en) | SiC whisker with BN coating on surface and molten salt method preparation method thereof | |
CN112030544B (en) | Method for in-situ growth of silicon carbide nanowires on surface of silicon carbide fiber | |
CN112176719B (en) | C/SiC shell-core structure composite fiber preparation method and composite fiber | |
CN111960860B (en) | Preparation method of wear-resistant Si-SiC coating on surface of C/C-SiC brake material | |
CN105198500B (en) | A kind of laminar C/C MoSi2The preparation method of composite | |
CN116289238B (en) | Carbon fiber hard felt surface coating and preparation process thereof | |
CN105967755B (en) | A kind of crystal whisker toughened mullite antioxidant coating of carbon/carbon composite mullite and preparation method thereof | |
CN115536413B (en) | A multi-layer core-shell structure nanowire-toughened chemical vapor deposition SiC coating and its preparation method | |
CN110952043A (en) | SiC whisker reinforced iron-based powder metallurgy material and preparation method thereof | |
CN105967756B (en) | A kind of crystal whisker toughened silicate glass antioxidant coating of carbon/carbon composite mullite and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |