CN102667622A - Photomask - Google Patents
Photomask Download PDFInfo
- Publication number
- CN102667622A CN102667622A CN2010800579743A CN201080057974A CN102667622A CN 102667622 A CN102667622 A CN 102667622A CN 2010800579743 A CN2010800579743 A CN 2010800579743A CN 201080057974 A CN201080057974 A CN 201080057974A CN 102667622 A CN102667622 A CN 102667622A
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- China
- Prior art keywords
- photomask
- lens
- mask
- exposure
- micro
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Abstract
A photomask is provided with: a mask substrate (2) comprising a transparent substrate (4) with a plurality of mask patterns (5) of a prescribed shape formed on the lower surface (4a); and a micro-lens array (3) comprising a different transparent substrate (9), a plurality of projection lenses (10) which projects a reduced projection image of the plurality of mask patterns (5) onto an oppositely arranged object to be exposed and is formed on the lower surface (9a), and a plurality of field lenses (11) which focuses the incident light onto the projection lens (10) and is formed on the upper surface (9b) such that the optical axis thereof matches the optical axis of projection lens (10). The photomask is formed by connecting the mask substrate (2) with the micro-lens array (3) in a state wherein the mask patterns (5) and the field lenses (11) are in close proximity and opposite each other with a predetermined gap therebetween. In this manner, the photomask improves the usage efficiency of the light irradiated onto the object to be exposed.
Description
Technical field
The present invention relates to a kind of through micro lens with the picture reduced projection of mask pattern by arranged opposite by the photomask on the exposure body, to improve the photomask that shines in the utilization ratio of the light of the body that made public in particular to a kind of desire.
Background technology
For example existing this photomask has: be formed on a plurality of openings of regulation shape on the photomask on a surface of being located at transparency carrier; Another surface and the corresponding setting respectively of said each opening at said transparency carrier; Make the picture of said opening be imaged near opposed and configuration by a plurality of micro lens on the exposure body; Thereby improve the exposure (for example, the referenced patent document 1) that can realize fine pattern near the exploring degree of the exposing patterns in the exposure.
[technical literature formerly]
[patent documentation]
[patent documentation 1] TOHKEMY 2009-277900 communique
Summary of the invention
[problem that invention will solve]
But; In so existing photomask; Be located at transparency carrier a surface opening (mask pattern) and another surperficial micro lens (projecting lens) of being located at said transparency carrier with the thickness equal spacing configured separate of substrate, so existence is not taken into the situation in the said micro lens of correspondence through a part of light in the light of the said opening of photomask.Its reason is, has vision (collimation half-angle) owing to shine in the light source light of photomask, so the light that has passed through opening is to be incident in micro lens with the suitable angle spread of said collimation half-angle.Therefore, along with the expansion at the interval of said opening and micro lens, the amount that is taken into the light of micro lens reduces, and shines in being reduced by the light quantity of exposure body, and the utilization ratio of light is reduced.
Especially, under the situation of the photomask of the exposure that is used for large-area for example TFT substrate for display, the thicker of transparency carrier reaches several mm～tens mm, and said problem is more remarkable.
To this, the present invention makes in order to handle such problem, and its purpose is, provides a kind of desire to improve to take a picture in by the photomask of the utilization ratio of the light of exposure body.
[being used to solve the means of problem]
In order to realize said purpose, photomask of the present invention has: mask substrate, and its surface at transparency carrier is formed with a plurality of mask patterns of regulation shape; Micro-lens array; Its surface at another transparency carrier is formed with a plurality of projecting lens of picture reduced projection on the body that made public by the quilt of arranged opposite with said a plurality of mask patterns; And on another surface of another transparency carrier so that the optical axis mode consistent with the optical axis of said projecting lens is formed with a plurality of field lenss that incident light are concentrated on said projecting lens, so that said mask pattern has specified gap with said field lens and the mode that is near opposed state engages said mask substrate and said micro-lens array.
According to such structure; Have under specified gap and the effect of field lens at mask pattern near the micro-lens array of opposed and configuration with respect to mask substrate; The light that will pass through mask pattern is concentrated on projecting lens, and through this projecting lens with the picture reduced projection of said mask pattern on by the body that made public of arranged opposite.
In addition, the exterior lateral area at said at least a plurality of projecting lens of said micro-lens array is formed with photomask.Thus, the photomask of the exterior lateral area of a plurality of at least projecting lens through being formed at micro-lens array interdicts the light to the projecting lens external exposure.
And then, be that benchmark is provided with the alignment mark that is used for the said body contraposition that made public on the surface that is formed with said a plurality of projecting lens of said micro-lens array with this projecting lens.Thus, through on the surface that is formed with a plurality of projecting lens of micro-lens array with this projecting lens be alignment mark that benchmark is provided with carry out with by the contraposition of exposure body.
In addition, saidly be handled upside down with constant speed along a direction in exposure by the exposure body, said alignment mark is to leave being provided with towards said mode by the front side predetermined distance of the carrying direction of exposure body of the zone that is formed with said a plurality of projecting lens.Thus, leave the zone that is formed with a plurality of projecting lens under the effect of the alignment mark that is provided with by the front side predetermined distance of the carrying direction of exposure body, and in exposure, carried out contraposition with what constant speed was handled upside down by the exposure body along a direction.
And then said alignment mark comprises; The parallel a pair of thread pattern of carrying direction with the said body that made public; Be located between this a pair of thread pattern and with respect to a said thread pattern that is intersected with predetermined angular by the carrying direction of exposure body.Thus; Comprise with by the parallel a pair of thread pattern of carrying direction of exposure body and be located between this a pair of thread pattern and effect with respect to the alignment mark of a thread pattern that is intersected with predetermined angular by the carrying direction of exposure body under, and carry out contraposition with the body that made public that constant speed is handled upside down along a direction.
And, being provided with aperture on the surface of said projecting lens, said aperture has the circular open of diameter less than the diameter of said field lens.Thus, be limited in the beam diameter that penetrates in the projecting lens through the surface of being located at projecting lens and aperture with diameter circular open littler than the diameter of field lens.
[invention effect]
According to the invention of first aspect, can be through making the roughly full dose of the light that has passed through mask pattern be concentrated on projecting lens near the opposed field lens that disposes with mask pattern.Thereby, can improve via projecting lens and shine in the utilization ratio of the light of the body that made public.Thus, can reduce the power of light source, thereby alleviate the burden of light source.
In addition, according to the invention of second aspect, can interdict unwanted light leak, thereby can further improve the resolution of exposing patterns through photomask.
And then; Invention according to the third aspect; The alignment mark that can make photomask near with photomask near opposed and configuration by the surface of exposure body, thereby can be simultaneously observe preformed alignment mark on by the exposure body to reference of reference and photomask.Thereby, can easily carry out photomask and the contraposition of the body that made public.In addition; Even if under the situation of the optical axis deviation of the center of mask pattern and projecting lens; Because the projection image of mask pattern is formed on the optical axis of projecting lens; So through using the said alignment mark that forms benchmark with projecting lens to aim at, thus also can with the picture precision of mask pattern well positioning exposure on the assigned position of body that made public.
In addition, according to the invention of fourth aspect, Yi Bian the position deviation correction in can moving on one side by between the exposure body to photomask and along a direction make public, thereby can shorten the productive temp of the engineering of making public.
And then, according to the invention of the 5th aspect, can through an alignment mark come to carry out accurately photomask and by the position deviation of exposure between the body detect and with respect in moving by the control of the exposure time series of exposure body.Thereby, can be through being come accurately the picture of mask pattern is positioned exposure by the assigned position of exposure body.
And, according to the invention of the 6th aspect, can get rid of the influence of the spherical aberration of projecting lens, thereby can further improve the exploring degree of projecting lens.Thereby, can further improve the resolution of exposing patterns.
Description of drawings
Fig. 1 is the figure of expression based on the embodiment of photomask of the present invention, (a) is vertical view, and the X-X line section that (b) is (a) is to view.
Fig. 2 is the key diagram of a mode of alignment mark of the contraposition of the expression mask substrate and the micro-lens array that are used to carry out said photomask, (a) the mask side alignment mark is shown, and lens side alignment mark (b) is shown.
Fig. 3 is the cut-open view of the structure of the said micro-lens array of expression, and it is the key diagram of expression based on the imaging of the mask pattern of paraxial rays tracking.
Fig. 4 is the vertical view of the N type alignment mark of the said photomask of expression.
Fig. 5 is the schematic drawing that the exposure device of said photomask is used in expression.
Fig. 6 is the block diagram of structure of the control gear of the said exposure device of expression.
Fig. 7 is to realizing the key diagram that the position deviation correction at the shooting center of photomask and image mechanism is represented according to said N type alignment mark.
Fig. 8 is to said photomask and the key diagram of being represented by the position deviation correction of exposure body.
Fig. 9 is the vertical view of another structure example of expression photomask of the present invention.
Embodiment
Below, according to accompanying drawing embodiment of the present invention is elaborated.Fig. 1 is the figure of expression based on the embodiment of photomask 1 of the present invention, (a) is vertical view, and the X-X line section that (b) is (a) is to view.This photomask 1 is to be used for the picture of mask pattern is passed through the mechanism of micro lens reduced projection on the body that made public by the quilt of arranged opposite, and it possesses mask substrate 2 and micro-lens array 3.
Said mask substrate 2 is the members that are formed with a plurality of mask patterns of regulation shape on a surface of transparency carrier; Shown in Fig. 1 (b), on the opaque coating 6 of chromium (Cr) of the lower surface 4a that is formed at transparency carrier 4 etc., for example be the rectangular a plurality of mask patterns 5 that are formed with the regulation shape.And; In this figure (a), four bights that form 7 the outside, zone by two thick mask patterns that dotted line clipped be formed be used for after the micro-lens array 3 stated carry out contraposition, such by opaque film formed criss-cross mask side alignment mark 8 shown in for example Fig. 2 (a).Need to prove, in Fig. 1 (a), mask pattern 5 is simply illustrated by quadrilateral because of accompanying drawing is numerous and diverse.
Opposed and be provided with micro-lens array 3 with said mask substrate 2.This micro-lens array 3 be used for the picture reduced projection of the mask pattern 5 of said mask substrate 2 by near opposed and configuration by the member on the exposure body; Shown in Fig. 1 (b); On the lower surface 9a of another transparency carrier 9 with the mask pattern 5 of mask substrate 2 for example be accordingly rectangular be formed with said a plurality of mask pattern 5 reduced projection by arranged opposite by a plurality of projecting lens 10 on the exposure body; As shown in the drawing, on upper surface 9b so that the optical axis state consistent with the optical axis of projecting lens 10 is formed with field lens 11 that kind shown in Figure 3, that incident light is concentrated on projecting lens 10.And, be formed with the photomask 12 that the opaque coating by chromium (Cr) etc. constitutes in the exterior lateral area of said field lens 11 and projecting lens 10.In this case, also can be provided with aperture on the surface of projecting lens 10 with diameter circular open littler than the diameter of field lens 11.Thus, the influence that can get rid of the spherical aberration of projecting lens 10 improves the exploring degree of projecting lens.Need to prove, as shown in Figure 3 in this embodiment, make the diameter of projecting lens 10 form forr a short time, thereby can obtain and equal in fact effect when being provided with aperture than the diameter of field lens 11.
In addition; Upper surface 9b at transparency carrier 9; In four bights that form 13 the outside, zone by shown in Figure 1 two the thick lens that dotted line clipped, with the mask side alignment mark 8 of said mask substrate 2 be formed with accordingly be used for mask substrate 2 carry out contraposition, such lens side alignment mark 14 that is formed with criss-cross opening at opaque coating shown in for example Fig. 2 (b).And then; Be formed with the tetragonal opening 15 corresponding at the photomask 12 of the lower surface 9a of transparency carrier 9 side, thereby the illumination light of coming from the lower surface 9a side irradiation of transparency carrier 9 seen through and lens side alignment mark 14 is thrown light on lens side alignment mark 14.
In addition, be provided with alignment mark (below, be referred to as " N type alignment mark 16 ") on the surface of a plurality of projecting lens 10 of the formation of said micro-lens array 3 (lower surface 9a).This N type alignment mark 16 is in exposure, to be used for making the mask pattern 5 of mask substrate 2 and the mark of the exposure target location contraposition of the body that made public that is handled upside down along a direction shown in Fig. 1 arrow A all the time; In Fig. 1; Its with form by two thick lens that dotted line was clipped in a plurality of projecting lens 10 of zone in 13, towards by shown in the arrow A by the carrying direction of exposure body (below; Be referred to as " board carrying direction ") and the projecting lens 10 that is positioned at front side as benchmark, and leaving the predetermined distance setting towards the front side of board carrying direction (arrow A direction).Need to prove that in order can to observe N type alignment mark 16 from the top of mask substrate 2, the photomask 12 of the opaque coating 6 of the said mask substrate 2 in zone that will be corresponding with N type alignment mark 16 and the upper surface 9b of micro-lens array 3 is removed.Like this; Through N type alignment mark 16 is formed on the surface identical with the formation face of the projecting lens 10 of micro-lens array 3; Approaching with photomask 1 thus near opposed surface and the N type alignment mark 16 that is handled upside down by the exposure body; Thereby can observe preformed reference pattern and N type alignment mark 16 on the body that made public simultaneously, photomask 1 becomes easy with the contraposition of the body that made public.In addition; Even if under the situation of the optical axis deviation of the center of mask pattern 5 and projecting lens 10; Because the projection image of mask pattern 5 is formed on the optical axis of projecting lens 10; Therefore, under the alignment effect of using the N type alignment mark 16 that projecting lens 10 is formed benchmark, also can be by the assigned position precision of exposure body exposed mask pattern 5 well.
Here; N type alignment mark 16 is particularly as shown in Figure 4; Be to comprise for example parallel a pair of thread pattern 17a, 17b and be located between this a pair of thread pattern 17a, 17b and the mark of the roughly N word shape of a thread pattern 17c intersecting with predetermined angular θ (for example θ=45 °) with respect to board carrying direction (arrow A direction) with board carrying direction (arrow A direction); Shown in Fig. 1 (a) so that thread pattern 17c form N type alignment mark 16 with the parallel center line of board carrying direction (arrow A direction) and the consistent mode in center of the arbitrary projecting lens 10 in said a plurality of projecting lens 10.In addition, central shaft N type alignment mark 16 and this board carrying direction (arrow A direction) quadrature and micro-lens array 3 towards the board carrying direction and the distance between the projecting lens 10 of front side is redefined for distance B.
Such micro-lens array 3 can form as follows.
At first, on the upper surface 9b of transparency carrier 9, form under the outer state in zone 13 lens are formed that etching is carried out in zone 13 and the degree of depth of excavation for example about 50 μ m～300 μ m down having covered lens.And then, utilize technique known to form a plurality of field lenss 11 that zone 13 forms the convex of the curvature with regulation at lens.Secondly, after the whole surface of the upper surface 9b of transparency carrier 9 forms the photomask 12 that chromium (Cr) waits, carry out etching and remove reaching photomask 12 with the corresponding zone of said N type alignment mark 16 with said field lens 11 corresponding parts.Simultaneously, also can carry out etching to lens side alignment mark 14 forms.Then, form zone 13, utilize technique known to form a plurality of projecting lens 10 of convex accordingly with said field lens 11 at the lens of the lower surface 9a of transparency carrier 9.Then, after the whole surface of the lower surface 9a of transparency carrier 9 forms the photomask 12 that chromium (Cr) waits, carry out etching with lens side alignment mark 14 corresponding parts and remove reaching with said projecting lens 10 corresponding parts.At this moment, also can form N type alignment mark 16 simultaneously.
Need to prove that N type alignment mark 16 not only can be provided with one on photomask 1, also can along with the board carrying direction roughly the direction of quadrature be provided with a plurality of.In this case, also can be provided with the image mechanism of stating behind many platforms 24 (with reference to figure 5) accordingly with each N type alignment mark 16.Thus, can use the arbitrary N type alignment mark 16 in a plurality of N type alignment marks 16 to carry out photomask 1 and the contraposition of the body that made public.The photomask 1 that is provided with a plurality of N type alignment marks 16 like this is preferred in the exposure of the large-area body that made public especially.
Then, the manufacturing about photomask 1 of the present invention describes.
At first, at the upper surface 9b of micro-lens array 3, the part adhesive-applying outside the lens of field lens 11 form zone 13.Secondly, make the lower surface 4a that is formed with mask pattern 5 of mask substrate 2 and the upper surface 9b that is coated with bonding agent of micro-lens array 3 come arranged opposite mask substrate 2 and micro-lens array 3 Face to face.Then; By microscope mask side alignment mark 8 and lens side alignment mark 14 are observed simultaneously on one side; On one side mask substrate 2 and micro-lens array 3 opposing parallel are moved, and serve as axle rotation carrying out contraposition with the center on the surface of each substrate 4,9 with the consistent mode of these two alignment marks.Then, under the state that mask substrate 2 and micro-lens array 3 is pressurizeed from the side on the surface of each substrate 4,9, said bonding agent is solidified and both are engaged.Thus, accomplish the photomask of the present invention 1 of that kind shown in Figure 1.At this moment, mask pattern 5 approaches to the distance about about 50 μ m～300 μ m with field lens 11.
Fig. 5 is the front view that the exposure device of photomask 1 of the present invention is used in expression.This exposure device is to be used for will be by exposure body 19 along the mechanism of a direction shown in the arrow A to make public in the constant speed carrying, and it possesses carrying mechanism 20, light source 21, coupling optical system 22, mask platform 23, image mechanism 24, control gear 25.
Said carrying mechanism 20 is to be used for carrying at upper surface 20a putting by exposure body 19 and making it along the mechanism of the direction shown in the arrow A with constant speed carrying; It is from upper surface 20a injection air and attract, and the injection of this air is made with attracting balance by exposure body 19 under the state of suspension ormal weight, carry.In addition, possess speed pickup and position transducer (omitting diagram) at carrying mechanism 20 to being detected by the position of exposure body 19 to being detected by the translational speed of exposure body 19.
Above said carrying mechanism 20, be provided with light source 21.This light source 21 is for radiating ultraviolet LASER Light Source as light source light.Need to prove, in this embodiment, light source 21 by after control gear 25 controls stated and intermittent luminous.
Light emission direction the place ahead at said light source 21 is provided with coupling optical system 22.This coupling optical system 22 be used to make the light source light that radiates from light source 21 to form directional light and be radiated at after the mask pattern of the photomask 1 stated form the member in zone 7, it comprises optic article such as photoelectric integrator or collector lens and constitutes.And then, also possess profile that mask pattern with photomask 1 forms zone 7 mask that ground carries out shaping to the transverse shape of light source light that coincide.
Opposed and be provided with mask platform 23 with the upper surface 20a of said carrying mechanism 20.This mask platform 23 is to be used for photomask 1 of the present invention is positioned and the member that keeps, and it is corresponding and form opening 26 at central portion that its mask pattern with photomask 1 forms the formation zone of zone 7 and N type alignment mark 16, with the circumference of maintenance photomask 1.And, also possess by after 25 controls of the control gear stated and in the face parallel with the upper surface 20a of carrying mechanism 20 along travel mechanism that the direction with board carrying direction (arrow A direction) quadrature moves.
Above said carrying mechanism 20, being provided with can be to being held the image mechanism 24 of making a video recording in the N type alignment mark 16 of the photomask 1 of mask platform 23.This image mechanism 24 is to be used for to the N type alignment mark 16 of photomask 1 with at the member of being made a video recording simultaneously by the surperficial preformed reference mark (the for example pixel of substrate for display) of exposure body 19, its in the face parallel with the upper surface 20a of carrying mechanism 20 along with board carrying direction (arrow A direction) roughly the direction of quadrature be the line camera that the straight line shape is arranged a plurality of photo detectors.
Be provided with control gear 25 with said carrying mechanism 20, light source 21, mask platform 23 and image mechanism 24 ground connection that is electrically connected.This control gear 25 is the photographed images that are used for according to image mechanism 24; And the member to photomask 1 and the mode of being revised by the position deviation of exposure body 19 mask platform 23 is moved and the luminous sequential of light source 21 is controlled; As shown in Figure 6, it possesses image processing part 27, storer 28, operational part 29, carrying mechanism driving governor 30, mask platform driving governor 31, light source driving controller 32, control part 33.
Here; Image processing part 27 is to be used for the photographed images by exposure body 19 surface that photographed by image mechanism 24 are handled, and the brightness that changes by the threshold value of overshoot change respectively to by the exposure body 19 preformed reference patterns with edge portion board carrying direction almost parallel and the member that detects with the edge portion that the board carrying direction is intersected.In addition; Storer 28 is to be used for to being pre-formed after being detected by the edge portion of the board carrying direction front side of the reference pattern of exposure body 19; Before the projected position of the picture of the mask pattern 5 that is arrived the board carrying direction front side that is positioned at photomask 1 by the initial exposure target location of exposure on the body 19, to the desired value TG of the distance that moved by exposure body 19
1, photomask 1 with by the exposure body 19 the desired value TG that aims at
2, photomask 1 the arrangement pitches P etc. of board carrying direction of mask pattern 5 store, and to after the member that temporarily stores of operation result in the operational part 29 stated.And then operational part 29 is to be used for output according to the position transducer of carrying mechanism 20 the made public displacement of body 19 of computing, and according to the output of image processing part 27 come computing photomask 1 with by the member of the position deviation amount of exposure body 19 etc.And carrying mechanism driving governor 30 is to be used for carrying mechanism 20 is controlled and made by the member that is handled upside down with constant speed of exposure body 19.In addition, mask platform driving governor 31 is to be used for mask platform 23 mobile controlled so that come photomask 1 and the member of being revised by the position deviation amount of exposure body 19 according to the output of operational part 29.And then light source driving controller 32 is to be used for member that the driving of lighting and extinguishing of light source 21 is controlled.And control part 33 is to be used for said each key element is suitably driven and member that integral body is unified to control.
Then, the action to the exposure device of such formation describes.
At first, in advance the position deviation amount between the shooting center of photomask 1 and image mechanism 24 is measured.It can carry out as follows.Promptly; At first; Be held in the N type alignment mark 16 of the photomask 1 of mask platform 23 by 24 pairs of image mechanisms and take; Its view data is carried out Flame Image Process in image processing part 27, shown in Fig. 7 (a) based on board carrying direction (arrow A direction) roughly the brightness on the direction of quadrature change and in operational part 29, calculate the center of said three dark portions respectively detecting with the position of the edge portion of corresponding three the dark portions of the thread pattern 17a～17c of N type alignment mark 16.Then, in operational part 29 between two dark portions of adjacency apart from G
1, G
2Carry out computing.And then, according to this apart from G
1, G
2Residual quantity come the departure G of the center line on N type alignment mark 16 and direction board carrying direction (arrow A direction) quadrature of the shooting center of image mechanism 24 and photomask 1 is carried out computing.In this case, when the tilt angle theta with respect to board carrying direction (arrow A direction) of said thread pattern 17c was θ=45 °, said departure G was G=(G
1-G
2)/2.Then, this departure G be stored in the storer 28 by the desired value TG of displacement of exposure body 16
1Addition and to desired value TG
1Revise, and the desired value (TG that should revise
1+ G) be stored in the storer 28.
Then, after the upper surface 20a of carrying mechanism 20 puts its year to being positioned by exposure body 19, control the driving of carrying mechanism 20, begin carrying along the arrow A direction with constant speed thereby make by exposure body 19 through carrying mechanism driving governor 30.
When carrying is made the edge portion of its board carrying direction (arrow A direction) front side arrive the camera position of image mechanism 24 by exposure body 19, take through 24 pairs of surfaces of image mechanism by exposure body 19.At this moment; The photographed images of image mechanism 24 in image processing part 27 by Flame Image Process; According on the board carrying direction from secretly changing to bright brightness, the edge portion of intersecting with the board carrying direction of preformed reference pattern on by exposure body 19 is detected.Then, the position of inscribing when the said edge portion of reference pattern detected according to the output of the position transducer of carrying mechanism 20 by exposure body 19 is detected.
Then, the computing of the displacement of beginning quilt exposure body 19 in operational part 29.In addition, this operation result with in storer 28, preserve by the said revised desired value (TG of the displacement of exposure body 19
1+ G) compare.And, when both are consistent, be positioned in by the initial exposure target location on the body 19 that makes public on the projected position of picture of mask pattern 5 of the front side of being positioned at of photomask 1 towards the board carrying direction.
On the other hand, shown in Fig. 8 (a), take through the N type alignment mark 16 and the reference pattern 34 of the body 19 that made public of 24 pairs of photomasks 1 of image mechanism.Its photographed images in image processing part 27 by Flame Image Process; Shown in this figure (b); To with board carrying direction (arrow A direction) roughly the brightness of the direction of quadrature change and to detect, thereby 34 of two reference patterns and the position with edge portion board carrying direction (arrow A direction) almost parallel dark portion corresponding with three thread pattern 17a～17c of N type alignment mark 16 of adjacency are detected.Then, in operational part 29, calculate the center of each dark portion according to these position datas.And then, in operational part 29, to the center of the dark portion corresponding with the for example left side thread pattern 17a of N type alignment mark 16 and with the center of 34 corresponding dark portions of two reference patterns of adjacency between apart from G
3Carry out computing, and with itself and the desired value TG that aims at that in storer 28, preserves
2Compare.Then, Yi Bian control by mask platform driving governor 31, Yi Bian so that said apart from G
3With the desired value TG that aims at
2Consistent mode make mask platform 23 to board carrying direction (arrow A direction) roughly the direction of quadrature move.Need to prove that this alignment actions is carried out all the time in quilt makes public moving of body 19, be all over until exposure for the body 19 that made public.
, be moved and said revised desired value (TG by after image mechanism 24 detections by the edge portion of board carrying direction (arrow A direction) the front side of the reference pattern 34 of exposure body 19 by exposure body 19
1+ G) equal apart from the time, will make light source 21 light the stipulated time by the lighting instruction and make light source driving controller 32 startings as trigger of operational part 29 outputs.Thus, the picture of mask pattern 5 of the board carrying direction front side of reduced projection photomask 1 on by the initial exposure target location of exposure body 19, thus on mask pattern 5, be formed with the exposing patterns of similar shape.
After; In operational part 29; Come the made public displacement of body 19 of computing according to the output of the position transducer of carrying mechanism 20, at every turn by exposure body 19 moved equate with the arrangement pitches P to the board carrying direction of the said mask pattern 5 that is stored in storer 28 apart from the time export to light source driving controller 32 and to light instruction.Thus; At every turn by the exposure body 19 moved equate with the arrangement pitches P to the board carrying direction of said mask pattern 5 apart from the time; Light source 21 is lighted the stipulated time and is carried out exposure, thereby the picture of mask pattern 5 is made public successively on the exposure target location on the quilt exposure body 19.Need to prove, in the photomask 1 of this embodiment, the same position on the quilt exposure body 19 is carried out multiple-exposure through a plurality of mask patterns 5 (three mask patterns 5 shown in Fig. 1) of arranging along board carrying direction (arrow A direction).Thereby, the power of light source 21 can be reduced, thereby burden can be alleviated with respect to light source 21.
Need to prove; In said embodiment; Being the formed photomask 1 of rectangular arrangement for mask pattern 5 with prescribed distance is illustrated; But the present invention is not limited thereto; Also can be following photomask 1: make mask pattern 5 be the mask pattern row that several rows of row form with prescribed distance along arranging formation with the direction of board carrying direction quadrature more, and with the mode that 5 of the mask patterns of the adjacency of the mask pattern row that are positioned at board carrying direction front side are replenished by the mask patterns 5 of follow-up mask pattern row will be follow-up each mask pattern row respectively along with the board carrying direction direction of the quadrature very little method of regulation that staggers roughly.Thus, can form exposing patterns densely.In this case, also can said many rows' mask patterns be listed ass as 1 group and configuration on the board carrying direction organizes.
In addition; In said embodiment; The situation of the member that forms for micro-lens array 3 of assembling on a mask substrate 2 for photomask 1 is illustrated; But the present invention is not limited thereto, as shown in Figure 9, and photomask also can be on the long axis direction of this mask substrate 2, to arrange the member that a plurality of micro-lens arrays 3 of assembling form with respect to a mask substrate 2.Thus, the manufacturing cost of micro-lens array 3 can be reduced, thereby also the manufacturing cost of photomask 1 can be reduced.
And then; In said embodiment; Down dig prescribed depth and the situation that forms field lens 11 is illustrated for upper surface 9b at the transparency carrier 9 of micro-lens array 3; But the present invention is not limited thereto, also can in be formed with field lens 11 at upper surface 9b and be formed with at lower surface 9a projecting lens 10 transparency carrier 9 another substrate of end joined and between the mask pattern 5 of mask substrate 2 and said field lens 11, form specified gap.Or; Also can form the pad of the outside configuration specific thickness in zone 13 at the lens of the upper surface 9b of said transparency carrier 9; Engage mask substrate 2 and micro-lens array 3 via this pad, thereby between said mask pattern 5 and field lens 11, form specified gap.
And, in said embodiment, be illustrated about the situation of being made public in the direction carrying in 1 pair of edge of photomask, but the present invention is not limited thereto by exposure body 19, also can be being made public of 1 pair of stationary state of photomask by exposure body 19.
Label declaration
1... photomask
2... mask substrate
3... micro-lens array
4... the transparency carrier that mask substrate is used
5... mask pattern
9... the transparency carrier that micro lens is used
10... projecting lens
11... field lens
12... photomask
16...N type alignment mark
17a～17c... thread pattern
19... by the exposure body
Claims (6)
1. photomask is characterized in that having:
Mask substrate, its surface at transparency carrier is formed with a plurality of mask patterns of regulation shape;
Micro-lens array; Its surface at another transparency carrier is formed with a plurality of projecting lens of picture reduced projection on the body that made public by the quilt of arranged opposite with said a plurality of mask patterns; And on another surface of another transparency carrier so that the optical axis mode consistent with the optical axis of said projecting lens is formed with a plurality of field lenss that incident light are concentrated on said projecting lens
So that said mask pattern has specified gap with said field lens and the mode that is near opposed state engages said mask substrate and said micro-lens array.
2. photomask as claimed in claim 1 is characterized in that,
Exterior lateral area at said at least a plurality of projecting lens of said micro-lens array is formed with photomask.
3. according to claim 1 or claim 2 photomask is characterized in that,
The surface that is formed with said a plurality of projecting lens at said micro-lens array is that benchmark is provided with the alignment mark that is used for the said body contraposition that made public with this projecting lens.
4. photomask as claimed in claim 3 is characterized in that,
The said body that made public is handled upside down with constant speed along a direction in exposure,
Said alignment mark is to leave being provided with towards said mode by the front side predetermined distance of the carrying direction of exposure body of the zone that is formed with said a plurality of projecting lens.
5. photomask as claimed in claim 4 is characterized in that,
Said alignment mark comprises; The parallel a pair of thread pattern of carrying direction with the said body that made public; Be located between this a pair of thread pattern and with respect to a said thread pattern that is intersected with predetermined angular by the carrying direction of exposure body.
6. photomask as claimed in claim 1 is characterized in that,
Surface at said projecting lens is provided with aperture, and said aperture has the circular open of diameter less than the diameter of said field lens.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-290651 | 2009-12-22 | ||
| JP2009290651A JP5294490B2 (en) | 2009-12-22 | 2009-12-22 | Photo mask |
| PCT/JP2010/072401 WO2011077992A1 (en) | 2009-12-22 | 2010-12-13 | Photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102667622A true CN102667622A (en) | 2012-09-12 |
| CN102667622B CN102667622B (en) | 2014-09-17 |
Family
ID=44195522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080057974.3A Expired - Fee Related CN102667622B (en) | 2009-12-22 | 2010-12-13 | Photomask |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5294490B2 (en) |
| KR (1) | KR101674133B1 (en) |
| CN (1) | CN102667622B (en) |
| TW (1) | TWI490631B (en) |
| WO (1) | WO2011077992A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020173376A1 (en) * | 2019-02-28 | 2020-09-03 | 3D-FAB Limited | 3d printer using a slide carrier |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9001425B2 (en) * | 2011-07-29 | 2015-04-07 | V Technology Co., Ltd. | Microlens array and scanning exposure device using same |
| JP5842251B2 (en) * | 2012-01-06 | 2016-01-13 | 株式会社ブイ・テクノロジー | Exposure apparatus and exposed material manufacturing method |
| JP7082927B2 (en) * | 2018-08-27 | 2022-06-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Exposure device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1152136A (en) * | 1995-11-14 | 1997-06-18 | 三星电子株式会社 | Apparatus for projection exposure and method thereof |
| JP2006514784A (en) * | 2003-06-27 | 2006-05-11 | ヨンセ ユニバーシティー | Two-dimensional light modulation nano / micro aperture array and high-speed nano pattern recording system using the array |
| CN1871552A (en) * | 2003-10-27 | 2006-11-29 | 皇家飞利浦电子股份有限公司 | Apparatus for and method of forming optical images |
| JP2009277900A (en) * | 2008-05-15 | 2009-11-26 | V Technology Co Ltd | Exposure device and photomask |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006243543A (en) * | 2005-03-04 | 2006-09-14 | Fuji Photo Film Co Ltd | Method for forming permanent pattern |
| JP2007299993A (en) * | 2006-05-01 | 2007-11-15 | Canon Inc | Aligner |
| US8049865B2 (en) * | 2006-09-18 | 2011-11-01 | Asml Netherlands B.V. | Lithographic system, device manufacturing method, and mask optimization method |
| US8139199B2 (en) * | 2007-04-02 | 2012-03-20 | Nikon Corporation | Exposure method, exposure apparatus, light converging pattern formation member, mask, and device manufacturing method |
| TW200842500A (en) * | 2007-04-25 | 2008-11-01 | jian-zhang Chen | Photolithography system and method |
-
2009
- 2009-12-22 JP JP2009290651A patent/JP5294490B2/en not_active Expired - Fee Related
-
2010
- 2010-12-13 CN CN201080057974.3A patent/CN102667622B/en not_active Expired - Fee Related
- 2010-12-13 KR KR1020127012116A patent/KR101674133B1/en active IP Right Grant
- 2010-12-13 WO PCT/JP2010/072401 patent/WO2011077992A1/en active Application Filing
- 2010-12-21 TW TW099144866A patent/TWI490631B/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1152136A (en) * | 1995-11-14 | 1997-06-18 | 三星电子株式会社 | Apparatus for projection exposure and method thereof |
| JP2006514784A (en) * | 2003-06-27 | 2006-05-11 | ヨンセ ユニバーシティー | Two-dimensional light modulation nano / micro aperture array and high-speed nano pattern recording system using the array |
| CN1871552A (en) * | 2003-10-27 | 2006-11-29 | 皇家飞利浦电子股份有限公司 | Apparatus for and method of forming optical images |
| JP2009277900A (en) * | 2008-05-15 | 2009-11-26 | V Technology Co Ltd | Exposure device and photomask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020173376A1 (en) * | 2019-02-28 | 2020-09-03 | 3D-FAB Limited | 3d printer using a slide carrier |
| US11173655B2 (en) | 2019-02-28 | 2021-11-16 | Luxcreo (Beijing) Inc. | 3D printer using a slide carrier |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI490631B (en) | 2015-07-01 |
| WO2011077992A1 (en) | 2011-06-30 |
| KR20120109481A (en) | 2012-10-08 |
| TW201142489A (en) | 2011-12-01 |
| KR101674133B1 (en) | 2016-11-08 |
| CN102667622B (en) | 2014-09-17 |
| JP2011134768A (en) | 2011-07-07 |
| JP5294490B2 (en) | 2013-09-18 |
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