CN102664148B - Method for etching NiCrSi film through wet process - Google Patents
Method for etching NiCrSi film through wet process Download PDFInfo
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- CN102664148B CN102664148B CN201210153851.0A CN201210153851A CN102664148B CN 102664148 B CN102664148 B CN 102664148B CN 201210153851 A CN201210153851 A CN 201210153851A CN 102664148 B CN102664148 B CN 102664148B
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Abstract
The invention relates to a method for etching a NiCrSi film through a wet process. Since a step of washing the two surfaces of a silicon wafer at a short distance by separately using a water gun, the problem that cerium sulfate on the surface of the silicon wafer is difficult to remove by adopting the existing conventional etching method is effectively solved. Since the product cerium sulfate which is obtained after the NiCrSi film is etched through the wet process is insoluble in water, the method is not suitable for etching multiple silicon wafers which can be etched at one time by adopting the conventional etching method and the method is only suitable for etching the silicon wafers one by one, the cost control of raw materials of the method is superior to the cost control of the raw materials of the conventional etching method. By using fixed supports and culture dishes, the problem that the conventional method is inconvenient to operate is effectively solved; and by using clamping apparatuses which are separately used for placing the silicon wafers and are respectively provided with a lifting handle, the problem of excessive etching of the conventional etching method is effectively solved. After the NiCrSi film is etched by adopting the method, the point defects caused by the cerium sulfate on the surface of the silicon wafer are smaller than 20 per field of view and the qualified rate of the processed surfaces after microscopic examination can reach more than 90%.
Description
Technical field
The present invention relates to a kind of method of wet etching, a kind of particularly method of wet etching NiCrSi film, it is applicable to semiconductor fabrication process technical field.
Background technology
In IC semiconductor technique, figure shifts and refers to after silicon chip surface formation photoetching offset plate figure, by etching technics, this figure is transferred on the following layer of photoresist.Wet corrosion technique is the one in etching technics, refers to silicon chip and is immersed in a kind of chemical solvent, and the film reaction of this solvent and exposure, forms soluble byproduct.
The method of at present general wet etching NiCrSi film is that corrosive liquid is directly poured into according to certain ratio in the corrosive liquid packing groove that cleans etching system, the tetrafluoro gaily decorated basket of putting into handle with the silicon chip of corrosion window, the tetrafluoro gaily decorated basket is put in corrosive liquid packing groove, utilize accurate temperature and time controller, circulating pump uniform stirrer, the manipulator jittering device that equipment self is furnished with to corrode, after corroding, in the bath groove that has cleaning controller, rinse, dry.
Adopt this kind once to corrode the method for multiple silicon chips, because the product cerous sulfate after corrosion is graininess and water insoluble, only rely on the bath groove that cleans etching system, cerous sulfate is not easy to leave silicon chip surface, and causes silicon chip surface to send out mist, with microscopic examination silicon chip microcosmic, 9 visual field idea severe overweights of whole silicon chip, are all greater than 20/visual field, as shown in Figure 7, therefore have a strong impact on surperficial microscopy qualification rate, qualification rate is less than 40%.
Summary of the invention
For solving after existing wet etching NiCrSi film, the problem of its silicon chip surface idea defect severe overweight, the present invention proposes a kind of method of wet etching NiCrSi film.
For achieving the above object, the invention provides a kind of method of wet etching NiCrSi film, comprise step:
1) silicon chip of preparation with NiCrSi erosion window;
2) preparation corrosive liquid;
3) the NiCrSi film on described corrosion window is corroded;
4) hydraulic giant that the silicon chip after corrosion is carried out to positive and negative processings of closely washing by water, then in routine bath groove, carry out remote bath processing;
5) silicon chip after corrosion is carried out to clean with fuming nitric aicd.
The step of the silicon chip of described preparation NiCrSi erosion window is:
1), by the technique before conventional semiconductor metallization, on monocrystalline silicon buffing sheet, form the product structure before common metal;
2) adopt common metal metallization processes, deposit layer of Ni CrSi film, thickness is 20nm-30nm;
3) carry out conventional photoetching process, gluing, exposure, develops, and forms photoresist and makes masking layer, does not have the NiCrSi film of photoresist to make the silicon chip of corrosion window.
The preparation steps of described corrosive liquid is:
1) the high cerium 25g of crystalline sulfuric acid pours in vial, and pours 250ml deionized water in described vial;
2) in etching tank, fill the water that accounts for etching tank volume 2/3, heating;
3) vial is put into described etching tank, constantly stirs with glass bar, until form the high cerium saturated solution of bisque crystalline sulfuric acid;
4) again 25ml nitric acid is added in vial, constantly stir with glass bar, until form orange-red solution;
5) from etching tank, take out vial, normal temperature is standing, cooling more than 5 minutes, forms transparent corrosive liquid.
The described step that NiCrSi film on described corrosion window is corroded is:
1) in etching tank, fill the water that accounts for etching tank volume 2/3;
2) in etching tank, place and be with support bracket fastened culture dish, and will put into culture dish with the clamping apparatus of fixed handle and support, in culture dish, add the described corrosive liquid that accounts for culture dish volume 1/2;
3) temperature heater of unlatching etching tank; When temperature stabilization is after 50 degree, the described silicon chip with NiCrSi erosion window is placed on the support of described clamping apparatus;
4) the artificial handle of shaking up and down described clamping apparatus, erode to by the color of NiCrSi and present completely after the color of oxide layer, leave standstill again after 5～10 seconds, mention the handle of described clamping apparatus, make the described silicon chip with corrosion window expose the liquid level in culture dish, then press from both sides out the described silicon chip with corrosion window with tweezers.
The support height 15cm of described culture dish, the length of described culture dish is 12 × 12 × 3cm.
The length of described clamping apparatus is 11 × 11 × 0.5cm, the handle of clamping apparatus is positioned at any one jiao of clamping apparatus, the length and width of handle is 8 × 1.5cm, one end of the support of clamping apparatus is positioned at the center on any three limits of clamping apparatus, and the other end of clamping apparatus is 2.5cm apart from the distance of described center.
Processings of closely washing by water of the described hydraulic giant that silicon chip after corrosion is carried out to positive and negative, then the step of carrying out remote bath processing in routine bath groove is:
1) right hand takes tweezers to clamp silicon chip, and left hand takes the hydraulic giant suitable with routine bath groove pressure closely to rinse silicon chip positive and negative each 5 times in time;
2) more described silicon chip is put into tetrafluoro and spend indigo plant, and put into and clean the bath groove of etching system and carry out conventional bath processing.
Described to corrosion after silicon chip by the step that fuming nitric aicd carries out clean be:
1) silicon chip after corrosion is placed in to the quartzy gaily decorated basket, the quartzy gaily decorated basket is placed in quartz curette, and fuming nitric aicd is poured in quartz curette and flooded silicon chip, static 10 minutes of room temperature;
2) the quartzy gaily decorated basket takes out, and puts into that another is clean and fill the quartz curette of water, and the quartzy gaily decorated basket is taken out, and the water in quartz curette is outwelled, the more quartzy gaily decorated basket is put into quartz curette, again fills water, so circulates 10 times;
3) with tweezers, described silicon chip is sandwiched in the tetrafluoro gaily decorated basket, put into and clean the bath groove of etching system and wash by water and dry processing.
Beneficial effect:
Compared with the wet etching method of the inventive method and existing routine, there is following characteristics:
1. the inventive method has been owing to having increased separately by the closely step to silicon chip two-sided flushing of hydraulic giant after etching, the problem that after efficiently solving silicon slice corrosion in existing conventional caustic solution and completing, its surperficial cerous sulfate is difficult to removal.Cerous sulfate after conventional caustic solution corrosion is graininess, can not be removed in fuming nitric aicd corrosion cleaning process subsequently, although and cerous sulfate after the inventive method corrosion is also graininess, in fuming nitric aicd clean subsequently, substantially can be removed.
2. because product cerous sulfate is special, water insoluble after wet etching NiCrSi, so be not suitable for the conventional multiple silicon chips of once corrosion, can only be applicable to monolithic and corrode one by one.The raw-material amount that the inventive method is used is significantly less than the raw-material amount that conventional method is used, and therefore the inventive method is better than conventional caustic solution in cost of raw material control.
3. the inventive method is by adopting support bracket fastened culture dish, efficiently solve the operation inconvenience problem causing because culture dish is removable in conventional method; Meanwhile, by adopting the handled clamping apparatus of independent placement silicon chip, efficiently solve that silicon chip in conventional caustic solution is directly positioned in culture dish and the excessive erosion problem that can not immediately silicon chip extracting be caused after causing corrosion clean.The CD live width harmomegathus that conventional caustic solution causes is greater than industry standard 0.15, sometimes even reach 0.3, and the present invention can ensure that CD live width does not exceed standard, and is less than 0.15.
4. the corrosive liquid that the inventive method adopts, by the mode of heating water bath, efficiently solves the ceric sulfate crystalline solid in corrosive liquid in conventional caustic solution and is difficult for consoluet problem.After conventional caustic solution need to be waited for 3 hours, could use corrosive liquid, and the present invention only needed after 30 minutes, just can use corrosive liquid.
The inventive method is being corroded after NiCrSi film, surface-brightening when its silicon chip surface checks under spotlight, and lower 9 visual fields of microscope all exceed standard without idea, are less than 20/visual field, improve 50% than the surperficial idea defect qualification rate of conventional NiCrSi erosion method.The inventive method is easy to operate, by solving the problem of silicon chip surface idea defect severe overweight in corrosion process, has significantly improved surperficial microscopy qualification rate, can reach more than 90%, and the product qualified rate of conventional caustic solution is generally lower than 40%.
Brief description of the drawings
Fig. 1 is the process chart of wet etching NiCrSi film of the present invention;
Fig. 2 is the main pseudosection of band fixed support/culture dish of the present invention;
Fig. 3 is the left pseudosection of band fixed support/culture dish of the present invention;
Fig. 4 is the vertical view of band fixed support/culture dish of the present invention;
Fig. 5 is the overall structure schematic diagram of band fixed support/culture dish of the present invention;
Fig. 6 is band fixed handle/support of the present invention for placing the overall structure schematic diagram of clamping apparatus of silicon chip;
Fig. 7 is silicon chip surface after the corrosion of the NiCrSi erosion method routinely vertical view in microscope details in a play not acted out on stage, but told through dialogues;
Fig. 8 is the vertical view in microscope details in a play not acted out on stage, but told through dialogues by the silicon chip surface after NiCrSi erosion method corrosion of the present invention.
Embodiment
Below in conjunction with the concrete NiCrSi wet corrosion technique of implementing, the present invention is described in further detail.
The technological process of wet etching NiCrSi film of the present invention as shown in Figure 1.The method step of wet etching NiCrSi of the present invention is as follows:
One, the silicon chip of preparation with NiCrSi erosion window.
1), by the technique before conventional semiconductor metallization, on monocrystalline silicon buffing sheet, form the product structure before common metal;
2) adopt common metal metallization processes, deposit layer of Ni CrSi film, thickness is 20nm-30nm;
3) carry out conventional photoetching process, gluing, exposure, develops, and forms photoresist and makes masking layer, does not have the NiCrSi film of photoresist to make the silicon chip of corrosion window.
Two, preparation NiCrSi corrosive liquid.
1) the high cerium 25g of crystalline sulfuric acid pours in vial, and pours 250ml deionized water in described vial;
2) in etching tank, fill the water that accounts for etching tank volume 2/3, heating;
3) vial is put into described etching tank, constantly stirs with glass bar, until form the high cerium saturated solution of bisque crystalline sulfuric acid;
4) again 25ml nitric acid is added in vial, constantly stir with glass bar, until form orange-red solution;
5) from etching tank, take out vial, normal temperature is standing, cooling more than 5 minutes, forms transparent corrosive liquid.
Three, the NiCrSi film on described corrosion window is corroded.
1) in etching tank, fill the water that accounts for etching tank volume 2/3;
2) in etching tank, place and be with support bracket fastened culture dish, and will put into culture dish with the clamping apparatus of fixed handle and support, in culture dish, add the described corrosive liquid that accounts for culture dish volume 1/2;
4) temperature heater of unlatching etching tank; When temperature stabilization is after 50 degree, the described silicon chip with NiCrSi erosion window is placed on the support of described clamping apparatus;
4) the artificial handle of shaking up and down described clamping apparatus, erode to by the color of NiCrSi and present completely after the color of oxide layer, leave standstill again after 5～10 seconds, mention the handle of described clamping apparatus, make the described silicon chip with corrosion window expose the liquid level in culture dish, then press from both sides out the described silicon chip with corrosion window with tweezers.
Four, the hydraulic giant that the silicon chip after corrosion is carried out to positive and negative processings of closely washing by water, then in routine bath groove, carry out remote bath processing.
1) right hand takes tweezers to clamp silicon chip, and left hand takes the hydraulic giant suitable with routine bath groove pressure closely to rinse silicon chip positive and negative each 5 times in time;
2) more described silicon chip is put into tetrafluoro and spend indigo plant, and put into and clean the bath groove of etching system and carry out conventional bath processing.
Five, the silicon chip surface after corrosion is carried out to clean with fuming nitric aicd:
1) silicon chip after corrosion is placed in to the quartzy gaily decorated basket, the quartzy gaily decorated basket is placed in quartz curette, and fuming nitric aicd is poured in quartz curette and flooded silicon chip, static 10 minutes of room temperature;
2) the quartzy gaily decorated basket takes out, and puts into that another is clean and fill the quartz curette of water, and the quartzy gaily decorated basket is taken out, and the water in quartz curette is outwelled, the more quartzy gaily decorated basket is put into quartz curette, again fills water, so circulates 10 times;
3) with tweezers, described silicon chip is sandwiched in the tetrafluoro gaily decorated basket, put into and clean the bath groove of etching system and wash by water and dry processing.
The master of band fixed support/culture dish of the present invention looks, left pseudosection and vertical view respectively as shown in Figure 2,3, 4, the overall structure schematic diagram of band fixed support/culture dish of the present invention as shown in Figure 5, band fixed handle/support of the present invention for place silicon chip clamping apparatus overall structure schematic diagram as shown in Figure 6.
In Fig. 5, the support height 15cm of described culture dish, the length of described culture dish is 12 × 12 × 3cm.
In Fig. 6, the length of described clamping apparatus is for being 11 × 11 × 0.5cm, the handle of clamping apparatus is positioned at any one jiao of clamping apparatus, the length and width of handle is 8 × 1.5cm, one end of the support of clamping apparatus is positioned at the center on any three limits of clamping apparatus, and the other end of clamping apparatus is 2.5cm apart from the distance of described center.
By adopting support bracket fastened culture dish, efficiently solve the operation inconvenience problem causing because culture dish is removable in conventional method; Meanwhile, by adopting the handled clamping apparatus of independent placement silicon chip, efficiently solve that silicon chip in conventional caustic solution is directly positioned in culture dish and the excessive erosion problem that can not immediately silicon chip extracting be caused after causing corrosion clean.The CD live width harmomegathus that conventional caustic solution causes is greater than industry standard 0.15, sometimes even reach 0.3, and the present invention can ensure that CD live width does not exceed standard, and is less than 0.15.
Silicon chip surface after the corrosion of NiCrSi erosion method routinely at the vertical view of microscope details in a play not acted out on stage, but told through dialogues as shown in Figure 7; By the silicon chip surface after NiCrSi erosion method of the present invention corrosion at the vertical view of microscope details in a play not acted out on stage, but told through dialogues as shown in Figure 8.As seen in Figure 7, silicon chip surface idea severe overweight, is greater than 20/visual field; As seen in Figure 8, silicon chip surface is almost without idea.Can sum up now method of the present invention and can solve after existing wet etching NiCrSi film, the technological problems of the idea defect severe overweight that its silicon chip surface is caused by cerous sulfate.
Claims (6)
1. a method for wet etching NiCrSi film, comprises following step:
1) silicon chip of preparation with NiCrSi erosion window;
2) preparation corrosive liquid, the preparation steps of described corrosive liquid is:
The high cerium 25g of crystalline sulfuric acid pours in vial, and pours 250ml deionized water in described vial;
In etching tank, dress accounts for the water of etching tank volume 2/3, heating;
Vial is put into described etching tank, constantly stirs with glass bar, until form the high cerium saturated solution of bisque crystalline sulfuric acid;
Again 25ml nitric acid is added in vial, constantly stir with glass bar, until form orange-red solution;
From etching tank, take out vial, normal temperature is standing, cooling more than 5 minutes, forms transparent corrosive liquid;
3) the NiCrSi film on described corrosion window is corroded;
4) hydraulic giant that the silicon chip after corrosion is carried out to the positive and negative processing of closely washing by water, in routine bath groove, carrying out remote bath again processes: the right hand takes tweezers to clamp silicon chip, and left hand takes the hydraulic giant suitable with routine bath groove pressure closely to rinse silicon chip positive and negative each 5 times in time; Again described silicon chip is put into tetrafluoro and spend indigo plant, and put into and clean the bath groove of etching system and carry out conventional bath processing;
5) silicon chip after corrosion is carried out to clean with fuming nitric aicd.
2. the method for wet etching NiCrSi film according to claim 1, is characterized in that: the step of the silicon chip of described preparation NiCrSi erosion window is:
1), by the technique before conventional semiconductor metallization, on monocrystalline silicon buffing sheet, form the product structure before common metal;
2) adopt common metal metallization processes, deposit layer of Ni CrSi film, thickness is 20nm-30nm;
3) carry out conventional photoetching process, gluing, exposure, develops, and forms photoresist and makes masking layer, does not have the NiCrSi film of photoresist to make the silicon chip of corrosion window.
3. the method for wet etching NiCrSi film according to claim 1, is characterized in that: the described step that NiCrSi film on described corrosion window is corroded is:
1) in etching tank, fill the water that accounts for etching tank volume 2/3;
2) in etching tank, place and be with support bracket fastened culture dish, and will put into culture dish with the clamping apparatus of fixed handle and support, in culture dish, add the described corrosive liquid that accounts for culture dish volume 1/2;
3) temperature heater of unlatching etching tank; When temperature stabilization is after 50 degree, by the described silicon with NiCrSi erosion window
Sheet is placed on the support of described clamping apparatus;
4) the artificial handle of shaking up and down described clamping apparatus, erode to by the color of NiCrSi and present completely after the color of oxide layer, leave standstill again after 5～10 seconds, mention the handle of described clamping apparatus, make the described silicon chip with corrosion window expose the liquid level in culture dish, then press from both sides out the described silicon chip with corrosion window with tweezers.
4. the method for wet etching NiCrSi film according to claim 3, is characterized in that: the support height 15cm of described culture dish, the length of described culture dish is 12 × 12 × 3cm.
5. the method for wet etching NiCrSi film according to claim 3, it is characterized in that: the length of described clamping apparatus is 11 × 11 × 0.5cm, the handle of clamping apparatus is positioned at any one jiao of clamping apparatus, the length and width of handle is 8 × 1.5cm, one end of the support of clamping apparatus is positioned at the center on any three limits of clamping apparatus, and the other end of clamping apparatus is 2.5cm apart from the distance of described center.
6. the method for wet etching NiCrSi film according to claim 1, is characterized in that: the described step that silicon chip fuming nitric aicd after corrosion is carried out to clean is:
1) silicon chip after corrosion is placed in to the quartzy gaily decorated basket, the quartzy gaily decorated basket is placed in quartz curette, and fuming nitric aicd is poured in quartz curette and flooded silicon chip, static 10 minutes of room temperature;
2) the quartzy gaily decorated basket takes out, and puts into that another is clean and fill the quartz curette of water, and the quartzy gaily decorated basket is taken out, and the water in quartz curette is outwelled, the more quartzy gaily decorated basket is put into quartz curette, again fills water, so circulates 10 times;
3) with tweezers, described silicon chip is sandwiched in the tetrafluoro gaily decorated basket, put into and clean the bath groove of etching system and wash by water and dry processing.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1869284A (en) * | 2006-04-06 | 2006-11-29 | 株洲南车时代电气股份有限公司 | Chemical grooving technical process and device using rotation corrosion liquid spraying method |
| CN101447530A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Process for cleaning sizing agent used for etching silicon dioxide mask |
| CN101773917A (en) * | 2010-03-05 | 2010-07-14 | 上海集成电路研发中心有限公司 | Silicon slice cleaning device and method |
| CN102082092A (en) * | 2009-11-27 | 2011-06-01 | 中国振华集团永光电子有限公司 | Acid corrosion technology for glass passivated mesa diode |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1869284A (en) * | 2006-04-06 | 2006-11-29 | 株洲南车时代电气股份有限公司 | Chemical grooving technical process and device using rotation corrosion liquid spraying method |
| CN101447530A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Process for cleaning sizing agent used for etching silicon dioxide mask |
| CN102082092A (en) * | 2009-11-27 | 2011-06-01 | 中国振华集团永光电子有限公司 | Acid corrosion technology for glass passivated mesa diode |
| CN101773917A (en) * | 2010-03-05 | 2010-07-14 | 上海集成电路研发中心有限公司 | Silicon slice cleaning device and method |
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Effective date of registration: 20190703 Address after: 401332 367, West Wing Road, Xiyong Town, Shapingba District, Chongqing Patentee after: China Electric Technology Group Chongqing acoustic photoelectric Co., Ltd. Address before: No. 14 Nanping Garden Road, Nanan District, Chongqing 400060 Patentee before: No.24 Inst., China Electronic Science & Technology Group Corp. |
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Effective date of registration: 20210108 Address after: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee after: The 24th Research Institute of China Electronics Technology Group Corp. Address before: 401332 367, West Wing Road, Xiyong Town, Shapingba District, Chongqing Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC Co.,Ltd. |