CN102655072A - Ion implantation equipment - Google Patents
Ion implantation equipment Download PDFInfo
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- CN102655072A CN102655072A CN2011100494489A CN201110049448A CN102655072A CN 102655072 A CN102655072 A CN 102655072A CN 2011100494489 A CN2011100494489 A CN 2011100494489A CN 201110049448 A CN201110049448 A CN 201110049448A CN 102655072 A CN102655072 A CN 102655072A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses ion implantation equipment comprising an ion source system, a magnet system and a workpiece, wherein the magnet system is used for deflecting ion beams generated by the ion source system so that an ion beam with a preset charge-to-mass ratio can be selected from the ion beams, and the selected ion beam is implanted in the workpiece in a vertically downward transmission direction. The ion implantation equipment also comprises an electrode system arranged between the magnet system and the workpiece and used for deflecting the selected ion beam to be transmitted in the vertically downward direction. By using the ion implantation equipment, dust particles in the ion beams can be basically filtered out, therefore, the yield of manufactured products is greatly increased, the total height and cost of the equipment can be greatly reduced, the energy of the ion beam can also be changed, and precise ion implantation doping can be favorably realized.
Description
Technical field
The present invention relates to the solar wafer manufacturing technology, particularly relate to a kind of ion implantation device.
Background technology
New forms of energy are one of five big technical fields of tool decision power in the 21st century development of world economy.Solar energy be a kind of cleaning, efficiently, never depleted new forms of energy, that photovoltaic generation has is safe and reliable, noiseless, pollution-free, restriction less, plurality of advantages such as low, the easy maintenance of failure rate.Therefore, in the new century, national governments all utilize solar energy resources as the important content of national sustainable development strategy.In recent years, international photovoltaic power generation technology fast development was to the also significantly rising thereupon of demand of solar energy wafers doped.
In solar wafer doping field; Using the most general method is the thermal diffusion doping process; Though this method production efficiency is higher, needs to carry out some follow-up technologies and be used as replenishing, for example trimming technology or the like; Therefore processing step is total more, and the total cost of equipment is also corresponding higher.In addition, the thermal diffusion doping process is the more accurately dosage of controlled doping ion and uniformity also, thereby can cause a part of solar conversion efficiency of loss in the production process of solar energy wafers doped.
Because the thermal diffusion doping process exists above-mentioned many defectives, therefore along with the continuous progress of ion implantation technique, the doping process of solar wafer begins to develop to ion implantation doping process gradually.
With reference to United States Patent (USP) 4,353,160 and 20080038908 is said; In ion implantation doping process, in order to realize to being transmitted in the continuous processing of a large amount of solar wafer on the production line, in general ion implantation device; End in the beam transport system promptly before ion beam arrives the injection station, can be adjusted into the transmission direction of ion beam straight down usually; Thereby make the ion beam from top to down inject solar wafer, to accomplish dopping process to solar wafer.
Particularly, United States Patent (USP) 4,353, the structure of the ion implantation device described in 160 is as shown in Figure 1.Beam transport system in this ion implantation device comprises an ion source system 1 ' and a magnet system 2 '; This ion source system 1 ' is used to generate an ion beam; Then, this magnet system 2 ' can make this ion beam that wide-angle deflection takes place one time under the action of a magnetic field, and this time deflection not only can screen out away the ion that charge-mass ratio does not meet preset requirement from this ion beam; This deflected ion beam that can also simultaneously screening be stayed is transmission straight down; So, when ion beam arrive to inject station, this ion beam just can from top to down to the solar wafer 4 ' processing of mixing.
Though above-mentioned this ion implantation device can satisfy the production line needs of processing continuously; But it still exists some defectives: in the zone at this magnet system 2 ' place; Because magnet is to the selection effect of the different various ions of charge-mass ratio; Many charge-mass ratios do not meet the ion of preset requirement and the neutral particle that in the transmission course of ion beam, produces can fly out from this magnet system 2 ' and bombard on the chamber wall of the processing procedure vacuum chamber of this ion implantation device; Owing to generally all be coated with the graphite protective layer on the wall of chamber; This graphite protective layer can produce many graphite particulates under bombardment; In these graphite particulates and the processing procedure vacuum chamber some other do not meet the ion or the neutral particle that inject requirement and together just constituted so-called " powder dust particle ", and this powder dust particle is harmful to for the dopping process of solar wafer beyond doubt.Great part meeting is arranged along with ion beam transmits together in these powder dust particles; Because ion beam just can arrive the injection station afterwards leaving this magnet system 2 '; Therefore along with ion beam arrive inject station these powder dust particles just can with ion beam together from top to down drop on the solar wafer, the yields of the solar energy wafers doped that this can cause making undoubtedly significantly reduces.
Summary of the invention
The technical problem that the present invention will solve is that powder dust particle can drop on the defective on the solar wafer in a large number in the prior art in order to overcome; Providing a kind of can basic filtering fall the powder dust particle of ion beam before carrying out the ion injection, and can reduce the ion implantation device of equipment total height, reduction equipment total cost.
The present invention solves above-mentioned technical problem through following technical proposals: a kind of ion implantation device; It comprises an ion source system, a magnet system and workpiece; This magnet system is used for ion beam that deflection generates by this ion source system therefrom to filter out the ion beam with preset charge-mass ratio; This ion beam that filters out injects workpiece along transmission direction straight down; Its characteristics are that this ion implantation device also comprises: one is located at the electrode system between this magnet system and the workpiece, and this electrode system is used for this deflected ion beam that filters out is transmission straight down.
Preferably, this electrode system is used for 10 °～90 ° of this deflected ion beams that filters out.
Preferably, this electrode system also is used to make this ion beam that filters out to quicken or slows down.
Preferably, said workpiece is a solar wafer.
Positive progressive effect of the present invention is: the present invention has set up an electrode system in common ion implantation device; Make ion beam after leaving magnet system and before arriving the injection station, carry out wide-angle deflection again one time; Thereby the powder dust particle basic filtering in the ion beam is fallen; To prevent that powder dust particle from dropping on the workpiece, greatly raising makes yield of products thus.In addition; Be the design of transmission straight down with deflected ion beam in the prior art by magnet system; The present invention utilizes this electrode system that deflected ion beam is transmission straight down, because littler in the radius of turn of electrode system intermediate ion bundle on the one hand, self size of electrode system is also smaller and more exquisite than magnet system on the other hand; Therefore the present invention can also reduce the total height of whole ion implantation device significantly, thereby correspondingly reduces the total cost of whole ion implantation device.In addition, this electrode system can also change the energy of ion beam except the injection direction that can control ion beam, even ion beam quickens or slows down, this also helps to realize accurate ion implantation doping.
Description of drawings
Fig. 1 is the structural representation of existing ion implantation device.
Fig. 2 is the structural representation of this ion implantation device of the present invention.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to specify technical scheme of the present invention.
As shown in Figure 2, the beam transport system in this ion implantation device of the present invention comprises an ion source system 1, a magnet system 2 and an electrode system 3.This ion source system 1 can adopt existing ion source system to realize that it is used to generate an ion beam.This magnet system 2 can adopt existing mass analyzing magmet to realize equally; It is used for deflection this ion beam from this ion source system 1; From this ion beam, the ion sieve that charge-mass ratio does not meet preset requirement is removed away through this deflection; So, the ion that leaves in the ion beam of this magnet system 2 just will have preset charge-mass ratio.But; Though this magnet system 2 is to make ion beam that one wide-angle deflection take place in the present invention equally; But intermediate ion bundle of the present invention the transmission path through these magnet system 2 front and back but with prior art in different; The transmission direction of this magnet system 2 and not responsible ion beam with outgoing directly is deflected to straight down, arrives this electrode system 3 but be used under the prerequisite of guaranteeing to accomplish to the quality analysis of ion beam, making the ion beam of outgoing to transmit further.
This electrode system 3 can adopt existing electrode system to realize equally.This electrode system 3 is used to make ion beam before arriving the injection station, a wide-angle deflection to take place once more, and wherein the angle of this deflection preferably is 10 °～90 °, to guarantee that ion beam leaves this electrode system 3 along transmission direction straight down.In the present invention; The processing object of ion beam, promptly workpiece 4 is identical in placement attitude and the prior art of injecting the station place, that is to say; Workpiece 4 is to be placed with work surface attitude in horizontal direction; So, the present invention can guarantee equally that just the ion beam from top to down carries out ion injection processing to the upper surface of workpiece 4, thereby satisfies production line quantity-produced needs.
In the prior art; The essential reason that causes powder dust particle to drop on the workpiece is: in existing ion implantation device; Only adopted a single magnet system 2 ' to come to realize simultaneously that the wide-angle deflection ion beam is adjusted into dual purpose straight down with quality analysis and the wide-angle deflection ion beam of accomplishing ion beam with the transmission direction with ion beam, this just makes the powder dust particle that in this unique wide-angle deflection process, produces no longer include the chance in the beam transport path of leaving ion beam.
To above-mentioned analysis; The present invention has set up this electrode system 3 at the end of the beam transport system of ion beam especially; So; This magnet system 2 makes the wide-angle deflection first time of ion beam generation just only need to accomplish the quality analysis task to ion beam, utilizes this electrode system 3 to make ion beam that the transmission direction that the second time, wide-angle deflection was accomplished ion beam take place then and is adjusted into task straight down.Thus; The most powder dust particles that produce in the wide-angle deflection process in the first time just can be filtered away from the transmission path of ion beam in the wide-angle deflection process in the second time; Thereby avoid basically at injection station place the generation that powder dust particle drops on the situation on the workpiece taking place again, raising makes yield of products significantly thus.
Though The present invention be directed to the improvement that existing solar wafer doping process proposes; But this ion implantation device of the present invention can be applicable to not only obviously solar wafer is carried out ion implantation doping that it also goes for various needs and carries out the workpiece kind that ion injects processing.
In addition; This electrode system 3 among the present invention is except can wide-angle the ground deflected ion beam; Ion beam is quickened or deceleration, thereby change the energy state of ion beam, so that it accurately meets the concrete parameter request of ion implantation process.In addition; Because ion beam is littler in the radius of turn of the ratio of cornering radius under the electrode system effect under the field system effect; And the also common size of the equipment size of the existing commercially available electrode system that gets less than magnet system; Therefore the present invention is through replacing with above-mentioned this electrode system 3 from the flex point that along continuous straight runs transmission roughly finally changes transmission vertically into original magnet system at ion beam; Just obviously can reduce the total height of whole ion implantation device significantly, thereby correspondingly reduce the total cost of whole ion implantation device.
In sum, the present invention can fall the powder dust particle basic filtering in the ion beam, drops on the workpiece to prevent powder dust particle, greatly improves thus to make yield of products.In addition, the present invention can also reduce the total height of equipment significantly, thereby reduces the total cost of equipment.In addition, this electrode system can also change the energy of ion beam except the injection direction that can control ion beam, and this also helps to realize accurate ion implantation doping.
Though more than described embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited appended claims.Those skilled in the art can make numerous variations or modification to these execution modes under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.
Claims (4)
1. ion implantation device; It comprises an ion source system, a magnet system and workpiece; This magnet system is used for ion beam that deflection generates by this ion source system therefrom to filter out the ion beam with preset charge-mass ratio; This ion beam that filters out injects workpiece along transmission direction straight down; It is characterized in that this ion implantation device also comprises: one is located at the electrode system between this magnet system and the workpiece, and this electrode system is used for this deflected ion beam that filters out is transmission straight down.
2. ion implantation device as claimed in claim 1 is characterized in that, this electrode system is used for 10 °～90 ° of this deflected ion beams that filters out.
3. according to claim 1 or claim 2 ion implantation device is characterized in that, this electrode system also is used to make this ion beam that filters out to quicken or slows down.
4. ion implantation device as claimed in claim 1 is characterized in that, said workpiece is a solar wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100494489A CN102655072A (en) | 2011-03-01 | 2011-03-01 | Ion implantation equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100494489A CN102655072A (en) | 2011-03-01 | 2011-03-01 | Ion implantation equipment |
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| CN102655072A true CN102655072A (en) | 2012-09-05 |
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| CN2011100494489A Pending CN102655072A (en) | 2011-03-01 | 2011-03-01 | Ion implantation equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11329316A (en) * | 1998-05-21 | 1999-11-30 | Sumitomo Eaton Noba Kk | Inclined deceleration device and its ion beam forming method |
| US6242750B1 (en) * | 1997-11-28 | 2001-06-05 | Axcelis Technologies, Inc. | Ion implantation device |
| US6441382B1 (en) * | 1999-05-21 | 2002-08-27 | Axcelis Technologies, Inc. | Deceleration electrode configuration for ultra-low energy ion implanter |
| US6573517B1 (en) * | 1999-07-30 | 2003-06-03 | Sumitomo Eaton Nova Corporation | Ion implantation apparatus |
| CN101563750A (en) * | 2006-09-29 | 2009-10-21 | 瓦里安半导体设备公司 | Technique for improved ion beam transport |
| CN102479654A (en) * | 2010-11-30 | 2012-05-30 | 上海凯世通半导体有限公司 | Ion implantation equipment and method thereof |
-
2011
- 2011-03-01 CN CN2011100494489A patent/CN102655072A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242750B1 (en) * | 1997-11-28 | 2001-06-05 | Axcelis Technologies, Inc. | Ion implantation device |
| JPH11329316A (en) * | 1998-05-21 | 1999-11-30 | Sumitomo Eaton Noba Kk | Inclined deceleration device and its ion beam forming method |
| US6441382B1 (en) * | 1999-05-21 | 2002-08-27 | Axcelis Technologies, Inc. | Deceleration electrode configuration for ultra-low energy ion implanter |
| US6573517B1 (en) * | 1999-07-30 | 2003-06-03 | Sumitomo Eaton Nova Corporation | Ion implantation apparatus |
| CN101563750A (en) * | 2006-09-29 | 2009-10-21 | 瓦里安半导体设备公司 | Technique for improved ion beam transport |
| CN102479654A (en) * | 2010-11-30 | 2012-05-30 | 上海凯世通半导体有限公司 | Ion implantation equipment and method thereof |
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Application publication date: 20120905 |