CN102648067A - Sawing of blocks into wafers using diamond coated wires - Google Patents
Sawing of blocks into wafers using diamond coated wires Download PDFInfo
- Publication number
- CN102648067A CN102648067A CN2010800420417A CN201080042041A CN102648067A CN 102648067 A CN102648067 A CN 102648067A CN 2010800420417 A CN2010800420417 A CN 2010800420417A CN 201080042041 A CN201080042041 A CN 201080042041A CN 102648067 A CN102648067 A CN 102648067A
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- Prior art keywords
- solvent
- wire rod
- blocks
- technology
- surfactant
- Prior art date
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- Pending
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 30
- 229910003460 diamond Inorganic materials 0.000 title claims description 6
- 239000010432 diamond Substances 0.000 title claims description 6
- 239000002904 solvent Substances 0.000 claims abstract description 52
- 239000000654 additive Substances 0.000 claims abstract description 8
- 230000000996 additive effect Effects 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000004094 surface-active agent Substances 0.000 claims description 17
- 229920001400 block copolymer Polymers 0.000 claims description 11
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 7
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims description 5
- 229920002113 octoxynol Polymers 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002518 antifoaming agent Substances 0.000 claims description 3
- 239000002562 thickening agent Substances 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 2
- 239000004435 Oxo alcohol Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N n-Nonyl alcohol Natural products CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 claims description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical compound OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 6
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 14
- 229910001573 adamantine Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 8
- -1 ethylene glycol-polypropylene Chemical group 0.000 description 6
- 239000002736 nonionic surfactant Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 229920001983 poloxamer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D57/00—Sawing machines or sawing devices not covered by one of the preceding groups B23D45/00 - B23D55/00
- B23D57/0007—Sawing machines or sawing devices not covered by one of the preceding groups B23D45/00 - B23D55/00 using saw wires
- B23D57/0023—Sawing machines or sawing devices not covered by one of the preceding groups B23D45/00 - B23D55/00 using saw wires with a plurality of saw wires or saw wires having plural cutting zones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/005—Cutting sheet laminae in planes between faces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
A process for cutting a block of material (16) into a multiplicity of wafers by movement of a planar array of generally parallel fast moving wires (9) embedded with abrasive particles relative to the block (or vice versa) in a direction perpendicular to the plane of the wires (9) and applying a solvent to the wires (9) before the wires (9) pass through the block (16), in which the solvent includes an additive to reduce the surface tension in the solvent before the solvent is carried by the wires (9) into the block. The invention includes apparatus for the process, and wafers when made by the process.
Description
Technical field
The present invention relates to blocks is cut into a large amount of thin wafers.Particularly the present invention relates to bulk si is cut into the wafer that is used for electronics, semiconductor and photovoltaic cell industry and similar application.
Background technology
The technology that the multi-thread material array that uses the wire rod of fast moving to constitute is used for blocks is cut into LED reverse mounting type is known.An instance that is used for the sand linear cutting equipment is disclosed in british patent specification 2,414,204.The present invention does not limit the use of in this equipment, also is applicable to be used for the blocks line is cut in any technology of LED reverse mounting type.
Wafer can be from multiple material, and for example Si, SiC, GaAs and sapphire blocks cut out and be used for electronics, semiconductor and photovoltaic application.For photovoltaic application, polycrystalline or silicon single crystal wafer are processed through the cutting bulk silicon.At present, multi-thread cutting is used for cutting the Si wafer in a large number from bulk si, and can make high-quality LED reverse mounting type (＜200 μ m) apace.Diamond particles is bonded on the wire rod of scroll saw, and use solvent for example water take away silicon and heat from block Si.
Vertically high speed (5-20m/s) is when moving into blocks with the right angle when parallel wire array, and solvent is brought into this blocks.Purpose is the cutting and minimum solvent loss with high-throughput, produces high-quality wafer at low cost.Cut out wafer in the process window that can limit in these characteristics of size and dimension, solvent properties and saw parameter through for example viscosity, abrasive particle.
One of maximum loss classification is the thickness fluctuation (LATF) at regional area.These fluctuations occur in cut between elementary period, and can cause varied in thickness and produce unacceptable thick and thin wafer.
The reason that these take place is that paired wire rod attracts each other.The one of the main reasons that these take place is the surface tension of the solvent that is used to cut.This surface tension is pulled in two adjacent wire rods together, makes their pairings and causes the thick wafer of twice pitch.This problem is progressively aggravated when wafer thickness and wire thickness reduce.
Also, wire rod is shown is pulled in power together referring to Fig. 1:
Wherein γ is the surface tension of solvent, and L is a solvent film length between wire rod, and r is the wire rod radius, and R is the curvature on solvent surface between wire rod, the angle of wetting between θ=solvent and the wire rod, and α is the angle that contact point is confirmed between solvent and the wire rod.
The present invention depends on and recognizes that the solvent surface tension is the key parameter of power between the control wire rod, prevents regional area varied in thickness (LATF) thereby should reduce this surface tension.
United States Patent (USP) 6,054,422 disclose a kind of different additive through add disperseing SiC for example the surfactant manufacturing have the method for the slurry of higher stability.
Patent US 6,602, and 834 disclose through improving viscosity and/or adding dispersant and polyeletrolyte is made the method for stable slurry with patent application WO03/042340, WO2008/027374A1, WO2009/017672 and US 2009/0126713.Yet these openly do not mention the slurry based on PEG, and only are used for the slurry based on water.
These open composition preparations that all openly do not prevent the LATF phenomenon.
Summary of the invention
The invention provides a kind of technology that is used for blocks is cut into a large amount of wafers; This technology is through carrying out with respect to the planar array of the fast moving wire rod of the mobile almost parallel of blocks (or vice versa) with the direction perpendicular to the wire rod plane; Said wire rod is embedded with abrasive particle; And through before the said blocks said wire rod is applied solvent at said wire rod; Wherein said solvent comprises additive, gets into and reduces the surface tension in the solvent before the said blocks thereby carry said solvent at wire rod.
Preferred said abrasive particle is a diamond.
Said solvent is the water of polyethylene glycol (PEG) or 5-100 weight % advantageously.
Preferred said additive is the surfactant that is soluble in the said solvent.
In this last form of mentioning, said surfactant can not have metal ion.
Preferred said surfactant can withstand the temperature that runs into when wire rod begins to cut the entering blocks; But in getting into the inner working angles of blocks, can not withstand the temperature that runs into, and the temperature that preferably in getting into the inner working angles of blocks, runs into is in addition enough destroyed said additive.
Advantageously, thus introduce the viscosity that thickener is regulated said solvent.
Advantageously, use antifoaming agent to form with the bubble that reduces in solvent.
In a form, preferred said surfactant is a nonionic, the for example block copolymer of ethene and propylene oxide, or octyl phenol ethoxylate.
In another form, preferred said surfactant is an ion.
The present invention includes and be used to carry out the equipment of technology as stated.
The present invention includes through technology manufacturing as stated or the wafer that produces at the equipment that is used for this technology.
Description of drawings
Fig. 1 is the figure that shows two adjacent wire rods of pulling.
Fig. 2 is the figure that shows the specific embodiment of the invention.
The specific embodiment
Through the three experiments specific embodiment, Fig. 2 schematically shows that solvent is applied to wire-electrode cutting device wherein when wire rod engages blocks or ingot shape body referring now to accompanying drawing (Fig. 2).These figure only are diagrams, do not represent any concrete machine.
As shown in Figure 2, the machine that is used for blocks is cut into a large amount of LED reverse mounting types has four parallel rollers, and their axis forms rectangle.The wire rod that is embedded with diamond particles 9 is crossed guider 10 supply with first roller 11.Pass to roller 12 to wire rod 9 approximate horizontal then, and therefrom vertically upward to roller 14.Roller 14 is driven vollers, and wire rod 9 passes roller 14, and it flatly can insert cutting zone 15 wherein through blocks or ingot shape body 16 afterwards.After passing through cutting zone 15, wire rod 9 passes main drive roll 17, and downward therefrom the generation around the second time of first roller 11 turns to.So can form parallel wire array through cutting zone 15.At the far-end of each roller, wire rod 9 is crossed second guider 18 recall.Drive wire rod 9 with at a high speed (5-20m/s), and ingot shape body 16 moves up slowly through cutting zone, it is cut into LED reverse mounting type by wire rod at this cutting zone.
Through nozzle 19 with on the wire rod between solvent draw roll 14 and the ingot shape body 16.The present invention relates to the formation of solvent.
Embodiment
Provided the instance of the typical solvent that is used for the line cutting as follows.The amount of surfactant increases when reducing wafer and wire thickness.Identical surfactant can be used to all embodiment.
Embodiment 1
Be used to use through the water-soluble preparation of non-ionic surfactant (is 280cST 35 ℃ of following viscosity) that constitutes by the ethylene oxide/propylene oxide block copolymer and be embedded with the solvent that adamantine wire rod cuts 5 weight %.This solvent is used to use and is embedded with the adamantine wire rod of 120 μ m and cuts the thick silicon wafer of 160 μ m.
Embodiment 2
Be used to use through the water-soluble preparation of ethylene oxide/propylene oxide block copolymer (is 280cST 35 ℃ of following viscosity) and be embedded with the solvent that adamantine wire rod cuts 10 weight %.This solvent is used to use and is embedded with the adamantine wire rod of 100 μ m and cuts the thick silicon wafer of 140 μ m.
Embodiment 3
Be used to use through the water-soluble preparation of octyl phenol ethoxylate nonionic surfactant (1.5 moles of EO) and be embedded with the solvent that adamantine wire rod cuts 5 weight %.Add ethylene glycol-polypropylene glycol block copolymer (20% polypropylene molecule amount: 2750) of 1 weight % as antifoaming agent.This solvent is used to use and is embedded with the adamantine wire rod of 120 μ m and cuts the thick silicon wafer of 160 μ m.
Embodiment 4
Through (20% polypropylene molecule amount: 2750) water-soluble preparation is used to use and is embedded with the solvent that adamantine wire rod cuts with ethylene glycol-polypropylene glycol block copolymer of 5 weight %.This solvent is used to use and is embedded with the adamantine wire rod of 120 μ m and cuts the thick silicon wafer of 160 μ m.
Embodiment 5
Through (20% polypropylene molecule amount: 2750) water-soluble preparation is used to use and is embedded with the solvent that adamantine wire rod cuts with ethylene glycol-polypropylene glycol block copolymer of 8 weight %.This solvent is used to use and is embedded with the adamantine wire rod of 100 μ m and cuts the thick silicon wafer of 140 μ m.
Embodiment 6
The non-ionic surfactant that 0.5 and 1 weight % is made up of ethylene oxide/propylene oxide block copolymer (is 280cST 35 ℃ of following viscosity) is water-soluble and test its wetability on steel.The result shows needs 1 weight % providing effectively wetting, and 0.5 weight % is not enough to obtain effective effect.
Embodiment 7
Be used to use through the water-soluble preparation of non-ionic surfactant that constitutes by ethylene oxide/propylene oxide block copolymer (is 280cST 35 ℃ of following viscosity) and be embedded with the solvent that adamantine wire rod cuts 1 weight %.This solvent is used to use and is embedded with the adamantine wire rod of 120 μ m and cuts the thick silicon wafer of 160 μ m.
Embodiment 8
Be used to use through the water-soluble preparation of non-ionic surfactant that constitutes by ethylene oxide/propylene oxide block copolymer (is 280cST 35 ℃ of following viscosity) and be embedded with the solvent that adamantine wire rod cuts 3 weight %.This solvent is used to use and is embedded with the adamantine wire rod of 120 μ m and cuts the thick silicon wafer of 160 μ m.
Recommend the surfactant of 1-10 weight %.
The selection of concrete material is following in the technology of the present invention.
The surfactant that uses can be the block copolymer of oxyalkylene; For example ethylene oxide, propylene oxide copolymer (the Pluronic series of BASF and the Tergitol L of DOW are serial); The ethoxylate of nonyl phenol/alcohol (the Tergitol series of DOW); Octyl phenol ethoxylate (the triton X series of DOW) and different alcohol and oxo alcohol (the Lutensol TO of BASF and AO series).
Preferred nonionic surfactants, this is owing to its use simple and easy (need not neutralization) and owing to its compatibility with the adhesive that exists, this adhesive is used for the bulk si of being installed in sawing is connected with glass plate.In addition, this system is compatible with the washing chemistry that is used for industry.
The thickener that uses can be synthetic or natural clay, colloid, xanthans, polyvinyl alcohol and cellulosic-based material, for example carboxymethyl cellulose and ethyl cellulose.
Advantage of the present invention
The application of the invention, the LATF problem will reduce.The surface tension of solvent will reduce, and cause the cleaning of wetting and some wafers after cutting of wire rod preferably.Capillaryly reduce also to mean that the power between (cutting back) two wafers will diminish, cause the power reduction of separating wafer needs.Better wetting wire rod should guarantee that solvent is sent to blocks in cutting process.Use of the present invention should allow to produce LED reverse mounting type by fine rule.Thinner SiC also can be used for cutting, causes wafer to produce preferable surface finish.
Claims (16)
1. blocks is cut into the technology of a large amount of wafers; It is through carrying out with respect to the planar array of the fast moving wire rod of the mobile almost parallel of blocks (or vice versa) with the direction perpendicular to the wire rod plane; Said wire rod is embedded with abrasive particle; And through before the said blocks said wire rod is applied solvent at said wire rod, wherein
-said solvent comprises additive, gets into and reduces the surface tension in the solvent before the said blocks thereby carry said solvent at wire rod.
2. technology according to claim 1, wherein said abrasive particle is a diamond.
3. according to claim 1 or the described technology of claim 2, wherein said solvent is polyethylene glycol (PEG).
4. according to claim 1 or the described technology of claim 2, wherein said solvent is the water of 5-100 weight %.
5. according to each the described technology in the claim 1 to 4, wherein said additive is the surfactant that is soluble in the said solvent.
6. technology according to claim 5, wherein said surfactant does not have metal ion.
7. according to claim 5 or the described technology of claim 6; Wherein said surfactant can withstand the temperature that runs into when said wire rod begins to cut the said blocks of entering, but in getting into the inner working angles of said blocks, can not withstand the temperature that runs into.
8. technology according to claim 7 wherein gets into the temperature that runs in the inner working angles of said blocks and enough destroys said additive.
9. according to each the described technology in the claim 5 to 8, thereby wherein introduce the viscosity that thickener is regulated said solvent.
10. according to each the described technology in the claim 5 to 9, wherein antifoaming agent is used to reduce the bubble formation in said solvent.
11. according to each the described technology in the claim 5 to 10, wherein said surfactant is a nonionic.
12. technology according to claim 11, wherein said non-ionic surface active agent are the block copolymers of ethene and propylene oxide.
13. technology according to claim 11, wherein said non-ionic surface active agent is one of following material: ethylene oxide, propylene oxide copolymer, octyl phenol ethoxylate, the ethoxylate of nonyl phenol/alcohol, different alcohol or oxo alcohol.
14. according to each the described technology in the claim 5 to 10, wherein said surfactant is an ion.
15. be used for carrying out equipment according to each described technology of claim 1-14.
16. according to each technology or the wafer of in the equipment of claim 15, making among the claim 1-14.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0916339A GB2473628A (en) | 2009-09-17 | 2009-09-17 | Process for cutting a multiplicity of wafers |
| GB0916339.5 | 2009-09-17 | ||
| PCT/NO2010/000339 WO2011034439A1 (en) | 2009-09-17 | 2010-09-17 | Sawing of blocks into wafers using diamond coated wires |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102648067A true CN102648067A (en) | 2012-08-22 |
Family
ID=41277882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800420417A Pending CN102648067A (en) | 2009-09-17 | 2010-09-17 | Sawing of blocks into wafers using diamond coated wires |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2013505576A (en) |
| CN (1) | CN102648067A (en) |
| GB (1) | GB2473628A (en) |
| TW (1) | TW201131628A (en) |
| WO (1) | WO2011034439A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950659A (en) * | 2012-10-18 | 2013-03-06 | 江西赛维Ldk太阳能高科技有限公司 | Silicon block cutting device |
| CN104385470A (en) * | 2014-11-18 | 2015-03-04 | 泉州市永茂电子科技有限公司 | Crystal bar slicing system |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2497120A (en) | 2011-12-01 | 2013-06-05 | Rec Wafer Norway As | Production of mono-crystalline silicon |
| GB2502102A (en) * | 2012-05-16 | 2013-11-20 | Rec Wafer Norway As | Improved production of monocrystalline silicon |
| TWI632041B (en) * | 2017-09-11 | 2018-08-11 | 環球晶圓股份有限公司 | Ingot slicing method and slicing abrasive kit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6054422A (en) * | 1999-02-19 | 2000-04-25 | Ppt Research, Inc. | Cutting and lubricating composition for use with a wire cutting apparatus |
| WO2003042340A1 (en) * | 2001-11-14 | 2003-05-22 | Ppt Research, Inc. | A cutting and lubricating composition for use with a wire cutting apparatus |
| US6602834B1 (en) * | 2000-08-10 | 2003-08-05 | Ppt Resaerch, Inc. | Cutting and lubricating composition for use with a wire cutting apparatus |
| US20040231134A1 (en) * | 2000-11-24 | 2004-11-25 | Sumitomo Special Metals Co., Ltd. | Method for cutting rare earth alloy, method for manufacturing rare earth magnet, and wire-saw machine |
| CN1953835A (en) * | 2004-05-18 | 2007-04-25 | Rec斯坎沃佛股份有限公司 | Abrasive wire sawing |
| US20090126713A1 (en) * | 2007-07-31 | 2009-05-21 | Steven Grumbine | Slurry composition containing non-ionic polymer and method for use |
| CN101528885A (en) * | 2006-08-30 | 2009-09-09 | 圣戈本陶瓷及塑料股份有限公司 | Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB717874A (en) * | 1952-05-22 | 1954-11-03 | British Thomson Houston Co Ltd | Improvements in and relating to methods of and apparatus for cutting crystal |
| US20090032006A1 (en) | 2007-07-31 | 2009-02-05 | Chul Woo Nam | Wire saw process |
| EP2205387A1 (en) * | 2007-10-30 | 2010-07-14 | Pall Corporation | Method and system for manufacturing wafer-like slices from a substrate material |
-
2009
- 2009-09-17 GB GB0916339A patent/GB2473628A/en not_active Withdrawn
-
2010
- 2010-09-17 WO PCT/NO2010/000339 patent/WO2011034439A1/en active Application Filing
- 2010-09-17 CN CN2010800420417A patent/CN102648067A/en active Pending
- 2010-09-17 TW TW099131673A patent/TW201131628A/en unknown
- 2010-09-17 JP JP2012529704A patent/JP2013505576A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6054422A (en) * | 1999-02-19 | 2000-04-25 | Ppt Research, Inc. | Cutting and lubricating composition for use with a wire cutting apparatus |
| US6602834B1 (en) * | 2000-08-10 | 2003-08-05 | Ppt Resaerch, Inc. | Cutting and lubricating composition for use with a wire cutting apparatus |
| US20040231134A1 (en) * | 2000-11-24 | 2004-11-25 | Sumitomo Special Metals Co., Ltd. | Method for cutting rare earth alloy, method for manufacturing rare earth magnet, and wire-saw machine |
| WO2003042340A1 (en) * | 2001-11-14 | 2003-05-22 | Ppt Research, Inc. | A cutting and lubricating composition for use with a wire cutting apparatus |
| CN1953835A (en) * | 2004-05-18 | 2007-04-25 | Rec斯坎沃佛股份有限公司 | Abrasive wire sawing |
| CN101528885A (en) * | 2006-08-30 | 2009-09-09 | 圣戈本陶瓷及塑料股份有限公司 | Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof |
| US20090126713A1 (en) * | 2007-07-31 | 2009-05-21 | Steven Grumbine | Slurry composition containing non-ionic polymer and method for use |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950659A (en) * | 2012-10-18 | 2013-03-06 | 江西赛维Ldk太阳能高科技有限公司 | Silicon block cutting device |
| CN104385470A (en) * | 2014-11-18 | 2015-03-04 | 泉州市永茂电子科技有限公司 | Crystal bar slicing system |
| CN104385470B (en) * | 2014-11-18 | 2016-07-06 | 泉州市永茂电子科技有限公司 | A kind of crystal bar slice systems |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201131628A (en) | 2011-09-16 |
| WO2011034439A1 (en) | 2011-03-24 |
| GB0916339D0 (en) | 2009-10-28 |
| JP2013505576A (en) | 2013-02-14 |
| GB2473628A (en) | 2011-03-23 |
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