CN102642170B - Multilayer ceramic capacitor grinding process and application of multilayer ceramic capacitor grinding process - Google Patents

Multilayer ceramic capacitor grinding process and application of multilayer ceramic capacitor grinding process Download PDF

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CN102642170B
CN102642170B CN201210139567.8A CN201210139567A CN102642170B CN 102642170 B CN102642170 B CN 102642170B CN 201210139567 A CN201210139567 A CN 201210139567A CN 102642170 B CN102642170 B CN 102642170B
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grinding
multilayer ceramic
chip
ceramic capacitor
minutes
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CN102642170A (en
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刘新
安可荣
黄作权
陈长云
李筱瑜
靳国境
黄旭业
彭自冲
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Guangdong Fenghua Advanced Tech Holding Co Ltd
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Abstract

The invention discloses a multilayer ceramic capacitor grinding process and an application of the multilayer ceramic capacitor grinding process. A ground chip is a sintered ceramic front chip, the volume ratio of the chip to water to surfactants is (200-650): (500-800): (5-20), and the operation curve is characterized in that the operation lasts 15 to 25 minutes at the rotation speed being 35 to 65 revolutions per minute (RPM), the operation lasts 15 to 25 RPM at the rotation speed being 55 to 85 RPM, and the operation lasts 110 to 150 minutes at the rotation speed being 110 to 150 RPM. The multilayer ceramic capacitor grinding process is applied to the preparation of multilayer ceramic capacitors, the traditional concept of grinding products after sintering is changed, the products are ground in advance after being cut, and the grinding is more easily than the grinding after the products are sintered into ceramics, so the grinding time is greatly shortened, and the production processing cost is saved; and meanwhile, the product quality is synthetically improved: the porcelain crack phenomenon is reduced, the impact force in the product grinding process is reduced, and internal micro flaws are reduced, so the insulation performance and the qualified rate of products are improved, and the product quality is improved.

Description

A kind of multilayer ceramic capacitor grinding technics and application thereof
Technical field
The present invention relates to field of electronic components manufacturing, particularly a kind of improved multilayer ceramic capacitor grinding technics.
Background technology
Multilayer ceramic capacitor (MLCC) product all adopts the mode of burning till rear grinding at present, and production procedure is followed successively by: batching, curtain coating, silk-screen, lamination, cutting, binder removal, high temperature burn till, grind chamfering, end-blocking, burning end, plating, test, braid etc.
Grinding chamfering step is by the MLCC chip after burning till, and makes the seamed edge angle rounding of chip by adding mill to be situated between, and fully draws inner electrode layer, and being beneficial to external electrode can fully contact with inner electrode layer, ensures the electric property of product.
Grind principle and be by the MLCC chip that adds the mill such as water, alumina powder or carborundum powder, quartz sand, alumina balls to be situated between and to sinter in beveler rotary course, realize between chip and chip, barreling effect between chip and mill Jie, by round and smooth its seamed edge angle grinding, and interior electrode is fully exposed.Taking the chip that grinds 200 ~ 600ml as example, existing general tinning mill is situated between: 200 ~ 600ml alumina powder, 150 ~ 400ml alumina balls, 100 ~ 400ml quartz sand (SiO2), 500 ~ 800ml water.
Grinding effect is not good also can cause irreversible damage to the structure of interiors of products except affecting the size of product and the processing of rear road termination procedure, causes the deterioration of electric property.Current electron trade development rapidly, miniaturization to chip capacitor, high power capacity, low cost, high reliability etc. have proposed strict requirement, because traditional lapping mode is to grind burning till into after porcelain, can cause product appearance to collapse the serious mass defect such as porcelain, underbead crack, therefore, the grinding technique of development of new is particularly necessary.
Particularly small size, large specification products with larger capacity, for example BME-MLCC product of NPO, X7R material, often has IR to return the not good phenomenon of quality of survey, and being that chip internal stress is excessive by analysis there is micro-crack and causes insulation to decline.Find by research; because this series products dielectric layer number is high; the Thickness Ratio of protective layer is thinner; the External Force Acting that chamfering is brought damages the internal structure of high-layer product with regard to being easy to; cause the appearance of the defects such as underbead crack, therefore must formulate special chamfer angle technique for this series products, should ensure the chamfering effect of product; can not cause damage to product again, make it have good insulation characterisitic.
Summary of the invention
For overcoming shortcoming of the prior art, the invention provides a kind of multilayer ceramic capacitor grinding technics, it is ensureing under the prerequisite of product chamfering effect, reduce the generation of internal force micro-crack, improve insulating properties and the qualification rate of product, improve the quality of products, saved the production time simultaneously, production cost is reduced greatly.
Another object of the present invention is to provide a kind of application the preparation method of the multilayer ceramic capacitor of above-mentioned grinding technics.
In order to solve the problems of the technologies described above, the present invention is achieved by the following technical solutions: a kind of multilayer ceramic capacitor grinding technics, it is characterized in that: the chip of grinding is for sintering the front chip of porcelain into, mill is situated between for water and surfactant, its chips: water: the volume ratio of surfactant is 200 ~ 650: 500 ~ 800: 5 ~ 20, operation curve is: under rotating speed 35 ~ 65RPM, move 15 ~ 25 minutes, rotating speed 55 ~ 85RPM operation 15 ~ 25 minutes, moves 110 ~ 150MIN under rotating speed 110 ~ 150RPM.
Described grinding technics also comprises and returns mill, the chip that returns mill is the one-tenth porcelain core sheet through grinding, binder removal, after burning till, mill is situated between for alumina powder or carborundum powder, alumina balls, quartz sand and water, wherein become porcelain core sheet: alumina powder or carborundum powder: alumina balls: quartz sand: the volume ratio of water is 200 ~ 650: 200 ~ 500: 200 ~ 500: 200 ~ 500: 500 ~ 800, operation curve is: under rotating speed 35 ~ 65RPM, move 15 ~ 25 minutes, rotating speed 55 ~ 85RPM operation 15 ~ 25 minutes, moves 55 ~ 85 minutes under rotating speed 110 ~ 150RPM.
Described surfactant is selected from ionic surfactant.
A preparation method for multilayer ceramic capacitor, comprises cutting, binder removal, sintering, termination procedure, it is characterized in that: the chip of capacitor grinds before binder removal after cutting.
Described chip first dries up its surperficial moisture after grinding, then enters next binder removal step.
The chip of capacitor returns mill after sintering.
The present invention compared with prior art, has the advantage of the following aspects:
(1) change product in the past and first burnt till the traditional idea grinding again, owing to grinding in advance after product cutting, after sintering porcelain into, ground and be easier to again, so greatly shortened milling time, saved production and processing cost;
(2) quality comprehensive of product promotes: the power that collapse that porcelain phenomenon reduces, is impacted in product process of lapping reduces, and internal tiny crack reduces, thereby improves insulating properties and the qualification rate of product, improves the quality of products.
Detailed description of the invention
The present invention is a kind of multilayer ceramic capacitor grinding technics, the chip grinding is for sintering the front chip of porcelain into, when grinding, mill is situated between for water and surfactant, its chips: water: the volume ratio of surfactant is 200 ~ 650: 500 ~ 800: 5 ~ 20, operation curve is: under rotating speed 35 ~ 65RPM, move 15 ~ 25 minutes, rotating speed 55 ~ 85RPM operation 15 ~ 25 minutes, moves 110 ~ 150 minutes under rotating speed 110 ~ 150RPM.Owing to sintering into, chip before porcelain is softer, grinds Jie's ratio by optimization, formulates the operation curve making new advances, and guarantees product appearance quality, improves product competitiveness.Thereby there is product seamed edge angle at present and cross defect round and that scrap, guarantee that product meets appearance requirement after grinding simultaneously in solution in process of lapping.
Preferably, surfactant is selected from ionic surfactant, for example: one or more mixing in the ionic surfactant of carboxylate, sulfuric acid, sulfonate, phosphate ester salt or amine salt class etc., as long as can avoid chip sticky mutually, play chip and disperse, wash texts.
The impurity adhering to for removing product surface, fully draw interior electrode simultaneously, guarantee product appearance and electrical property, preferably, described grinding technics also comprises and returns mill, the chip that returns mill is the one-tenth porcelain core sheet through grinding, binder removal, after burning till, when grinding, mill is situated between for alumina powder (or carborundum powder), alumina balls, quartz sand and water, wherein becomes porcelain core sheet: alumina powder (or carborundum powder): alumina balls: quartz sand: the volume ratio of water is 200 ~ 650: 200 ~ 500: 200 ~ 500: 200 ~ 500: 500 ~ 800.Operation curve is: under rotating speed 35 ~ 65RPM, move 15 ~ 25 minutes, rotating speed 55 ~ 85RPM operation 15 ~ 25 minutes, moves 55 ~ 85 minutes under rotating speed 110 ~ 150RPM.
Application has the preparation method of multilayer ceramic capacitor of above-mentioned grinding technics, and this preparation method comprises the following steps: batching, curtain coating, silk-screen, lamination, cutting, grinding, binder removal, burn till, return mill, end-blocking, burning end, plating, test, braid etc.
Because chip before binder removal contains more adhesive, after grinding, in dry run, easily produce bonding die, for solving product bonding die defect, the level of improving the quality of products, preferred, chip should first dry up its surperficial moisture before binder removal after grinding.For example, by the air-flow of certain pressure, the moisture content of product surface is dried up, thereby reach Non-sticking, automatic object of disperseing.
Contrast test
Test products model is 0402BME-MLCC NPO
Comparative example technological process and technological parameter routinely.Technological process is following steps: batching, curtain coating, silk-screen, lamination, cutting, binder removal, burn till, grinding, end-blocking, burning end, plating, test, braid etc.Grinding technics is in table 1.
Embodiment applies grinding technics of the present invention (in table 1), the same comparative example of other processing steps.The technological process of embodiment is following steps: batching, curtain coating, silk-screen, lamination, cutting, grinding, binder removal, burn till, return mill, end-blocking, burning end, plating, test, braid etc.
By the certification of products in circulation, embodiment products obtained therefrom quality meets the requirements, and testing result is in table 2.
Table 1:
Figure BDA00001609203900031
Table 2:
product appearance properties of product
comparative example qualified 3% polarisation cracking, 2%IR10 7~ 10 8.
embodiment qualified qualified

Claims (7)

1. a multilayer ceramic capacitor grinding technics, it is characterized in that: the chip of grinding is for sintering the front chip of porcelain into, mill is situated between for water and surfactant, its chips: water: the volume ratio of surfactant is 200~650: 500~800: 5~20, operation curve is: under rotating speed 35~65RPM, move 15~25 minutes, rotating speed 55~85RPM operation 15~25 minutes, under rotating speed 110~150RPM, move 110~150 minutes, described in to sinter chip before porcelain into be the capacitor chip after cutting, before binder removal.
2. multilayer ceramic capacitor grinding technics according to claim 1, it is characterized in that: described grinding technics also comprises and returns mill, the chip that returns mill is process grinding, binder removal, one-tenth porcelain core sheet after burning till, returning mill mill is situated between for alumina powder or carborundum powder, alumina balls, quartz sand and water, wherein become porcelain core sheet: alumina powder or carborundum powder: alumina balls: quartz sand: the volume ratio of water is 200~650: 200~500: 200~500: 200~500: 500~800, operation curve is: under rotating speed 35~65RPM, move 15~25 minutes, rotating speed 55~85RPM operation 15~25 minutes, under rotating speed 110~150RPM, move 55~85 minutes.
3. multilayer ceramic capacitor grinding technics according to claim 1 and 2, is characterized in that: described surfactant is selected from ionic surfactant.
4. a preparation method for multilayer ceramic capacitor, comprises cutting, binder removal, sintering, termination procedure, it is characterized in that: the chip of capacitor grinds before binder removal after cutting, and described grinding adopts grinding technics claimed in claim 1.
5. the preparation method of a kind of multilayer ceramic capacitor according to claim 4, is characterized in that: described chip first dries up its surperficial moisture after grinding, then enters next binder removal step.
6. the preparation method of a kind of multilayer ceramic capacitor according to claim 4, is characterized in that: the chip of capacitor returns mill after sintering.
7. the preparation method of a kind of multilayer ceramic capacitor according to claim 6, the described mill that returns adopts the grinding process that returns claimed in claim 2.
CN201210139567.8A 2012-05-07 2012-05-07 Multilayer ceramic capacitor grinding process and application of multilayer ceramic capacitor grinding process Active CN102642170B (en)

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JP6848459B2 (en) * 2017-01-17 2021-03-24 株式会社村田製作所 Manufacturing method of multilayer ceramic capacitors
CN107195458A (en) * 2017-06-06 2017-09-22 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) It is a kind of to reduce the radio frequency multilayer ceramic capacitor chamfer angle technique of equivalent series resistance
CN110253343A (en) * 2019-05-16 2019-09-20 厦门华信安电子科技有限公司 A kind of multilayer ceramic capacitor dry type beforehand research grinding process and preparation method thereof
CN111113252B (en) * 2019-12-11 2021-04-23 厦门华信安电子科技有限公司 MLCC grinding process
CN112975583B (en) * 2021-02-26 2022-04-29 厦门华信安电子科技有限公司 Grinding process and preparation method of large-size product of multilayer ceramic capacitor
CN115256204A (en) * 2022-07-28 2022-11-01 江苏芯声微电子科技有限公司 MLCC tumbling grinding process

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1890393A (en) * 2003-09-09 2007-01-03 瓦雷尔获取物有限公司 High-energy cascading of abrasive wear components
CN1948418A (en) * 2005-10-14 2007-04-18 花王株式会社 Polishing composition for a semiconductor substrate
CN101314214A (en) * 2008-06-28 2008-12-03 广东风华高新科技股份有限公司 Method for removing rough edges of element base substrate and application thereof
CN101582328A (en) * 2009-06-26 2009-11-18 彩虹集团公司 Nanometer silver paste for terminal electrode of multi-layer ceramic capacitor and method for preparing same
CN101786864A (en) * 2009-12-22 2010-07-28 广东风华高新科技股份有限公司 Ceramic dielectric material matched with nickel inner electrode and production method of capacitor produced by ceramic dielectric material
CN102354599A (en) * 2011-06-30 2012-02-15 广东风华高新科技股份有限公司 Preparation method for temperature compensation type multi-layer ceramic chip capacitor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1890393A (en) * 2003-09-09 2007-01-03 瓦雷尔获取物有限公司 High-energy cascading of abrasive wear components
CN1948418A (en) * 2005-10-14 2007-04-18 花王株式会社 Polishing composition for a semiconductor substrate
CN101314214A (en) * 2008-06-28 2008-12-03 广东风华高新科技股份有限公司 Method for removing rough edges of element base substrate and application thereof
CN101582328A (en) * 2009-06-26 2009-11-18 彩虹集团公司 Nanometer silver paste for terminal electrode of multi-layer ceramic capacitor and method for preparing same
CN101786864A (en) * 2009-12-22 2010-07-28 广东风华高新科技股份有限公司 Ceramic dielectric material matched with nickel inner electrode and production method of capacitor produced by ceramic dielectric material
CN102354599A (en) * 2011-06-30 2012-02-15 广东风华高新科技股份有限公司 Preparation method for temperature compensation type multi-layer ceramic chip capacitor

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