CN102637714B - CMOS (Complementary Metal-Oxide-Semiconductor) image sensor - Google Patents
CMOS (Complementary Metal-Oxide-Semiconductor) image sensor Download PDFInfo
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- CN102637714B CN102637714B CN201210127031.4A CN201210127031A CN102637714B CN 102637714 B CN102637714 B CN 102637714B CN 201210127031 A CN201210127031 A CN 201210127031A CN 102637714 B CN102637714 B CN 102637714B
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Abstract
The invention provides a CMOS (Complementary Metal-Oxide-Semiconductor) image sensor in which a first polarizer, a liquid crystal layer with a transparent electrode structure, and a second polarizer, are all additionally arranged on a light-sensitive component, and the arrangement of the liquid crystals between can be changed by controlling the voltage of the transparent electrode so as to control the on and off of light. A light on-off structure is added in pixel structures in the CMOS image sensor, the light on-off structure can independently control the exposure integral time of each pixel structure and also can simultaneously expose all or part of pixel structures or simultaneously stopping exposing, thereby realizing a global exposure function without influencing a filling rate of the image sensor, and the integrated level of devices is improved. Moreover, the added light on-off structures can substitute the conventional shutter apparatus, so that the volume of the light-sensitive devices is reduced.
Description
Technical field
The invention belongs to semiconductor applications, particularly relate to a kind of cmos image sensor.
Background technology
Cmos image sensor is the manufacture of a kind of CMOS of use manufacturing process, the optical signalling of image is converted to the signal of telecommunication for the semiconductor device transmitted and process.Cmos image sensor is generally made up of photosensitive region and signal processing circuit.Cmos image sensor common is at present active pixel type imageing sensor (APS).
Existing cmos image sensor comprises CMOS digital-to-analog circuit and pixel unit circuit array is formed, the number of the transistor included by a described pixel unit circuit, existing cmos image sensor is divided into 3T type structure and 4T type structure, can also has 5T type structure.
As shown in Figure 1, for a kind of equivalent circuit structure figure of pixel unit circuit of cmos image sensor of existing 3T type structure, comprise: a photodiode 10 (Photo Diode, PD), for carrying out opto-electronic conversion when exposing, convert the light signal received to the signal of telecommunication, described photodiode 10 comprises p type island region and N-type region, described p type island region ground connection.
A reset transistor M1, for resetting to described photodiode 10 before exposure, resetting is controlled by reset signal Reset signal.In FIG, described reset transistor M1 selects a NMOS tube, the source electrode of described reset transistor M1 is connected with the N-type region of described photodiode 10, the source electrode of described reset transistor M1 is also that a sense node N1 is also called floating diffusion region (Floating Diffusion, FD) simultaneously; The drain electrode of described reset transistor M1 meets power supply Vdd, and described power supply Vdd is a positive supply.When described reset signal Reset is high level, the N-type region of described photodiode 10 is also connected to power supply Vdd by described reset transistor M1 conducting, under the effect of described power supply Vdd, make described photodiode 10 reverse-biased and the electric charge of whole accumulations of described photodiode 10 can be removed, realizing resetting.Described reset transistor M1 also can be connected by multiple NMOS tube and be formed or formed by multiple NMOS tube parallel connection, also can replace described NMOS tube by PMOS.
An amplifier transistor M2, is also one source pole follower, amplifies for the signal of telecommunication produced by described photodiode 10.In FIG, described amplifier transistor M2 selects a NMOS tube, the grid of described amplifier transistor M2 connects the N-type region of described photodiode 10, and the drain electrode of described amplifier transistor M2 meets described power supply Vdd, and the source electrode of described amplifier transistor M2 is the output of amplifying signal.Described amplifier transistor M2 also can be connected by multiple NMOS tube and be formed or formed by multiple NMOS tube parallel connection.
A row selecting transistor M3, exports for the amplifying signal exported by the source electrode of described amplifier transistor M2.In FIG, described row selecting transistor M3 selects a NMOS tube, the grid of described row selecting transistor M3 meets row selection signal Rs, and the source electrode of described row selecting transistor M3 connects the source electrode of described amplifier transistor M2, and the drain electrode of described row selecting transistor M3 is output.
As shown in Figure 2, be a kind of equivalent circuit structure figure of pixel unit circuit of cmos image sensor of existing 4T type structure.Compared to 3T type structure, the pixel unit circuit structure chart of the cmos image sensor of existing 4T type structure adds a transfering transistor M4, and described transfering transistor M4 is used for the signal of telecommunication that described photodiode 10 produces to be input to described sense node N1.In fig. 2, described transfering transistor M4 selects a NMOS tube, the grid of described transfering transistor M4 switches through shifting signal TX, the source electrode of described transfering transistor M4 connects the N-type region of described photodiode 10, and the drain electrode of described transfering transistor M4 meets the source electrode of described reset transistor M1 and described sense node N1.
Material is divided three classes, gaseous state, liquid state, solid-state, that is familiar with state of matter along with people deepens continuously, find that material is except above-mentioned tri-state, also there is ionic state (plasmas), amorphous solid-state (amorplhous solids), liquid crystal state (liquid crystals), superconducting state (superconductors), neutron state (neutron state) etc.Find the liquid crystal material of more than hundreds thousand of kinds so far, wherein, being classified as follows of liquid crystal material:
Lysotropic liquid crystal: the liquid crystal state formed when Cucumber being dissolved in another material, is therefore known as lysotropic liquid crystal.Parents' molecule many genus lysotropic liquid crystal, suds are a kind of typical lysotropic liquid crystals.Cell membrane is the double-deck lysotropic liquid crystal that ester quasi-molecule is formed.Lysotropic liquid crystal is extensively present in nature, and particularly in organism, it is not only widely used in the every field of human lives, and in biophysics, biochemistry and bionics field attract attention deeply.The structure of a lot of organism, as the metabolism of the living matters such as brain, nerve, muscle, blood or life, the biological phenomenas such as consciousness, information transmission are all relevant with this liquid crystal.
Thermotropic liquid crystal: Yin Wendu and differently occur liquid crystal state.As wrist-watch, LCD TV, computer LCDs etc. be exactly that thermotropic liquid crystal is mainly divided into: (1) nematic phase (nematic): the molecule of composition as the common fluid in disorder distribution.Optical electromagnetic character presents the anisotropy similar to bright body, is referred to as three dimensional anisotropic fluid.(2) smectic phase (Smetic): the molecular center of composition has cycle sequence in a direction, rodlike molecule composition layer, in layer, molecular long axis is parallel to each other, its direction perpendicular to aspect or can become oblique arrangement (3) spiral phase (cholesteric) with aspect: if the molecule formed has chirality, molecularly oriented can form Torsion coil structure in space.Therefore its optical characteristics has strong circular dichroism and other photolytic activity (being also helicity) this kind of liquid crystal molecule is flat, arrangement stratification, in layer, molecule is parallel to each other, molecular long axis is parallel to layer plane, the molecular long axis direction of different layers slightly changes, and the normal direction along layer is arranged in helical structure.Spiral shell square P refers to that get back to initial orientation again, this periodic interlamellar spacing is called the spiral shell square of spiral phase liquid crystal after the change of 360 ° is experienced in the arrangement of different layers molecular long axis along the hand of spiral.
TN (Twist Nematic) twisted nematic liquid crystal: nematic crystal is clipped in the middle of two sheet glass, the surface of this glass is first coated with layer of transparent conductive film ITO (tin indium oxide) to be used as electrode, then on the glass having membrane electrode, be coated with orientation layer PI (polyimides), with make liquid crystal along one specific and be parallel to glass surface direction arrangement.The nature of liquid crystal has the distortion of 90 degree, and utilize electric field that liquid crystal molecule can be made to rotate, the birefringence of liquid crystal changes with the direction of liquid crystal, and the result of impact is that polarised light rotates through TN type liquid crystal rear polarizer direction.As long as select suitable thickness to make the polarization direction of polarised light just change 90 degree, just can utilize two parallel polaroids make light completely not by.And enough large voltage can make liquid crystal orientation parallel with direction of an electric field, such polarisation of light direction would not change, and light is just by second polaroid.So, just can control the break-make of light.
In cmos image sensors, photoelectric conversion unit reads the signal instruction of every a line of each pixel or the arrangement of multiple pixel, in this case, the signal instruction of time for exposure accumulation is difficult to all pixels of coupling, thus causes the picture distortion of shooting in some cases.Particularly when the object taken is in high-speed motion, this defect is more obvious.The image sensor technologies controlling picture element global exposure technique and realize snapshot mode is very important technology in high speed imaging sensor, is mainly used in the image catching high-speed motion.The method realizing imageing sensor at present mainly adopts the method for the transistor adding a control exposure in imageing sensor 4T structure to realize.But this method, because need to add new transistor in existing pixel cell, can bring impact to the filling rate of imageing sensor (Fillfactor).
Publication number is disclose a kind of liquid crystal shutter device in the patent application of CN1971346A, comprises the mutual vertical polarization sheet of two optical axis directions, two electrode slides and the liquid crystal material between electrode slide, and is controlled the folding of this shutter by a control loop.It is arranged between camera lens and photo-sensitive cell, can improve the speed of shutter.But, this shutter device is the same with traditional mechanical shutter, for the cmos image sensor of traditional structure, can not ensure that all pixels expose simultaneously, part pixel can not be realized expose simultaneously, thus can cause the difference that integration bad student sensitive time of each or every ranks pixel is larger, the overall situation exposure of device can not be realized, be unfavorable for the raising of the photosensitive precision of transducer.And the installing of this liquid crystal shutter too increases the volume of transducer, the demand day by day reduced for device volume is also disadvantageous.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of cmos image sensor, and to provide, a kind of device integration is high, pixel exposure time controllable precision is high and the cmos sensor of controlled imaged overall situation exposure.
For achieving the above object and other relevant objects, the invention provides a kind of cmos image sensor, it is characterized in that, at least comprise: light break-make structure, comprising: the first polarizer; Liquid crystal light guide structure, comprise be incorporated into described first polarizer the first transparency conducting layer, be incorporated into the liquid crystal layer of described first transparency conducting layer and be incorporated into the second transparency conducting layer of described liquid crystal layer, described in state first, second transparency conducting layer for applying voltage to control the orientation of described liquid crystal layer; Second polarizer, is incorporated into described liquid crystal light guide structure, and the polarization direction of its polarization direction and described first polarizer has phase difference;
Dot structure, comprises the photo-sensitive cell being incorporated into described smooth break-make structure and the pixel readout circuit being connected to described photo-sensitive cell, reads for the signal of telecommunication produced by described photo-sensitive cell.
In cmos image sensor of the present invention, described cmos image sensor also comprises the voltage-operated device that is connected to first, second transparency conducting layer described, for controlling the voltage of first, second transparency conducting layer described, to control the make-and-break time of described photo-sensitive cell glazing.
Preferably, the phase difference of described first polarizer and described second polarizer is 90 degree, and the voltage output range of described voltage-operated device is 0 ~ 5V.
In cmos image sensor of the present invention, described photo-sensitive cell is optical gate, PN type photodiode or PIN type photodiode.
In cmos image sensor of the present invention, the material of described first transparency conducting layer and the second transparency conducting layer is ITO (tin indium oxide), ATO (antimony-doped tin oxide), FTO (fluorine-doped tin oxide) or AZO (aluminium-doped zinc oxide).
In cmos image sensor of the present invention, the material of described liquid crystal layer is nematic liquid crystal, and further, the material of described liquid crystal layer is twisted nematic liquid crystal or super-twist nematic liquid crystal.
In cmos image sensor of the present invention, described pixel readout circuit is the pixel readout circuit of 4T type structure or 5T type structure.
As mentioned above, cmos image sensor of the present invention, there is following beneficial effect: on photo-sensitive cell, prepare the first polarizer, there is liquid crystal layer and second polarizer of transparent electrode structure, liquid crystal arrangement mode between can being changed by the voltage controlling described transparency electrode, thus the break-make controlling light.The present invention adds light break-make structure in dot structure, the exposure time of integration of each dot structure can be controlled independently, all dot structures or pixel structure can be made simultaneously to expose or stop exposure simultaneously, thus realize overall exposure function, and impact can not be brought on the filling rate of imageing sensor, improve the integrated level of device.And the light break-make structure of increase can replace traditional shutter device, reduces the volume of sensor devices.
Accompanying drawing explanation
Fig. 1 is shown as the equivalent circuit structure schematic diagram of the pixel unit circuit of the cmos image sensor of 3T type structure of the prior art.
Fig. 2 is shown as the equivalent circuit structure schematic diagram of the pixel unit circuit of the cmos image sensor of 4T type structure of the prior art.
Fig. 3 ~ 4 are shown as the structural representation of cmos image sensor of the present invention.
Fig. 5 is shown as the implementing circuit structural representation of middle cmos image sensor of the present invention.
Element numbers explanation
101 photo-sensitive cells
102 first polarizers
103 first transparency conducting layers
104 liquid crystal layers
105 second transparency conducting layers
106 second polarizers
107 protective layers
201 transfering transistors
202 floating diffusion regions
203 reset transistors
204 amplifier transistors
205 gate transistors
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 3 ~ Fig. 5.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in the figure, the invention provides a kind of cmos image sensor, it is characterized in that, at least comprise: light break-make structure, comprising: the first polarizer 102; Liquid crystal light guide structure, comprise be incorporated into described first polarizer 102 the first transparency conducting layer 103, be incorporated into the liquid crystal layer 104 of described first transparency conducting layer 103 and be incorporated into the second transparency conducting layer 105 of described liquid crystal layer 104, described in state first, second transparency conducting layer 105 for applying voltage to control the orientation of described liquid crystal layer 104; Second polarizer 106, is incorporated into described liquid crystal light guide structure, and the polarization direction of its polarization direction and described first polarizer 102 has phase difference, and in the present embodiment, described phase difference is 90 degree;
Dot structure, comprises the photo-sensitive cell 101 being incorporated into described smooth break-make structure and the pixel readout circuit being connected to described photo-sensitive cell 101, reads for the signal of telecommunication produced by described photo-sensitive cell 101.
Described photo-sensitive cell 101 is optical gate, PN type photodiode or PIN type photodiode, is PN type photodiode in the present embodiment.Certainly, in other embodiments, described photo-sensitive cell 101 also can be the device with ligh-induced effect of other all expections.
Described cmos image sensor also comprises the voltage-operated device that is connected to described first transparency conducting layer 103, second transparency conducting layer 105, for controlling the voltage of described first transparency conducting layer 103 and the second transparency conducting layer 105, to control the make-and-break time of described photo-sensitive cell 101 glazing.The voltage output range of described voltage-operated device is 0 ~ 5V.In the present embodiment, the voltage that described voltage-operated device exports is 5V.Described voltage-operated device adds voltage to change its orientation by the switching transistor that is connected to the first transparency conducting layer 103 or the second transparency conducting layer 105 to described liquid crystal layer 104, not during making alive, described liquid crystal layer 104 pairs of incident lights have the distortion of 90 degree, can make from the first polarizer 102, incident light after distortion by the second polarizer 106, now conducting light paths; And when adding voltage to make described liquid crystal layer 104 liquid crystal arrangement direction parallel with light incident direction, incident light just can not pass through the two orthogonal polarizers in polarization direction simultaneously, now light path is closed.
The material of described first transparency conducting layer 103 and the second transparency conducting layer 105 is ITO (tin indium oxide), ATO (antimony-doped tin oxide), FTO (fluorine-doped tin oxide) or AZO (aluminium-doped zinc oxide).In the present embodiment, the material of described first transparency conducting layer 103 and the second transparency conducting layer 105 is ITO.Certainly, in other embodiments, the material of described first transparency conducting layer 103 and the second transparency conducting layer 105 also can be the transparent conductive material of other expection.
The material of described liquid crystal layer 104 is nematic liquid crystal.In the present embodiment, the material of described liquid crystal layer 104 is twisted nematic liquid crystal, certainly, in other embodiments, described liquid crystal layer 104 also can be super-twist nematic liquid crystal etc., meanwhile, adaptive change is also done, to reach required effect in the polarization direction of described first polarizer 102 and the second polarizer 106.
In cmos image sensor of the present invention, described pixel readout circuit is the pixel readout circuit of 4T type structure or 5T type structure.In the present embodiment, described pixel readout circuit is the pixel readout circuit of 4T type structure.It comprises transfering transistor 201, floating diffusion region 202, reset transistor 203, amplifier transistor 204 and row selecting transistor 205.
In the present embodiment, described second polarizer 106 also has a transparent protective layer 107, to protect described smooth break-make structure.As embodiment, transparent protective layer 107 is silicon dioxide layer.
Fig. 5 is shown as the implementing circuit figure of cmos image sensor of the present invention, as shown in the figure, described implementing circuit comprises pel array 301, is connected to the line scanning module 302 of described pel array 301, column scan module 303, AD sample circuit 305, voltage-operated device 304 and reset circuit 306.In concrete implementation process, at exposure stage, all dot structures in described pel array 301 are controlled or pixel structure exposes simultaneously by described voltage-operated device 304, according to the exposure time of integration of presetting, the dot structure being in exposure status can be made to stop exposure simultaneously, to realize the operation of overall situation exposure, wherein, the photosensitive intensity that the described time of integration can reach according to outside light intensity and needs is determined; Then described line scanning module 302 or column scan module 303 make the exposure integrated signal of respectively this dot structure read out to described AD sample circuit 305 to described pel array 301 output scanning signal to carry out analog-to-digital conversion and carry out the reconstruct of image, drawing final image; Operate respectively this dot structure reset that rear described reset circuit 306 sends pel array 301 described in reset enable signal, to prepare to carry out exposing operation next time.
In sum, cmos image sensor of the present invention, photo-sensitive cell adds the first polarizer, has liquid crystal layer and second polarizer of transparent electrode structure, liquid crystal arrangement mode between can being changed by the voltage controlling described transparency electrode, thus the break-make controlling light.The present invention adds light break-make structure in dot structure, the exposure time of integration of each dot structure can be controlled independently, all dot structures or pixel structure can be made simultaneously to expose or stop exposure simultaneously, thus realize overall exposure function, and impact can not be brought on the filling rate of imageing sensor, improve the integrated level of device.And the light break-make structure of increase can replace traditional shutter device, reduces the volume of sensor devices.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (9)
1. a cmos image sensor, is characterized in that, at least comprises:
Light break-make structure, comprising:
First polarizer;
Liquid crystal light guide structure, comprise be incorporated into described first polarizer the first transparency conducting layer, be incorporated into the liquid crystal layer of described first transparency conducting layer and be incorporated into the second transparency conducting layer of described liquid crystal layer, first, second transparency conducting layer described is for applying voltage to control the orientation of described liquid crystal layer;
Second polarizer, is incorporated into described liquid crystal light guide structure, and the polarization direction of its polarization direction and described first polarizer has phase difference;
Dot structure, comprises the photo-sensitive cell being incorporated into described smooth break-make structure and the pixel readout circuit being connected to described photo-sensitive cell, reads for the signal of telecommunication produced by described photo-sensitive cell;
Described dot structure is single pixel, and described smooth break-make structure and single pixel one_to_one corresponding are arranged.
2. cmos image sensor according to claim 1, is characterized in that: the phase difference of described first polarizer and described second polarizer is 90 degree.
3. cmos image sensor according to claim 1, it is characterized in that: described cmos image sensor also comprises the voltage-operated device that is connected to first, second transparency conducting layer described, for controlling the voltage of first, second transparency conducting layer described, to control the make-and-break time of described photo-sensitive cell glazing.
4. cmos image sensor according to claim 3, is characterized in that: the voltage output range of described voltage-operated device is 0 ~ 5V.
5. cmos image sensor according to claim 1, is characterized in that: described photo-sensitive cell is optical gate, PN type photodiode or PIN type photodiode.
6. cmos image sensor according to claim 1, is characterized in that: the material of described first transparency conducting layer and the second transparency conducting layer is tin indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide or aluminium-doped zinc oxide.
7. cmos image sensor according to claim 1, is characterized in that: the material of described liquid crystal layer is nematic liquid crystal.
8. cmos image sensor according to claim 7, is characterized in that: the material of described liquid crystal layer is twisted nematic liquid crystal or super-twist nematic liquid crystal.
9. cmos image sensor according to claim 1, is characterized in that: described pixel readout circuit is the pixel readout circuit of 4T type structure or 5T type structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210127031.4A CN102637714B (en) | 2012-04-27 | 2012-04-27 | CMOS (Complementary Metal-Oxide-Semiconductor) image sensor |
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| CN201210127031.4A CN102637714B (en) | 2012-04-27 | 2012-04-27 | CMOS (Complementary Metal-Oxide-Semiconductor) image sensor |
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| CN102637714B true CN102637714B (en) | 2014-12-24 |
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| US20210041712A1 (en) * | 2019-08-05 | 2021-02-11 | GM Global Technology Operations LLC | Electronically-steerable optical sensor and method and system for using the same |
| CN110854145A (en) * | 2019-11-01 | 2020-02-28 | Oppo广东移动通信有限公司 | Pixel structure, image sensor and terminal |
| CN111200724B (en) * | 2020-01-13 | 2022-02-25 | Oppo广东移动通信有限公司 | Polarization type CIS, image processing method, storage medium and terminal equipment |
| WO2022170559A1 (en) * | 2021-02-10 | 2022-08-18 | 华为技术有限公司 | Polarization image sensor and photographing device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5917568A (en) * | 1994-07-08 | 1999-06-29 | The Regents Of The University Of Colorado | Adaptive attenuating spatial light modulator |
| CN101201468A (en) * | 2006-12-13 | 2008-06-18 | 鸿富锦精密工业（深圳）有限公司 | Camera module with liquid crystal type shutter |
| CN101930129A (en) * | 2009-06-26 | 2010-12-29 | 梁卓樑 | Thin film transistor liquid crystal panel with functions of camera shutter |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5917568A (en) * | 1994-07-08 | 1999-06-29 | The Regents Of The University Of Colorado | Adaptive attenuating spatial light modulator |
| CN101201468A (en) * | 2006-12-13 | 2008-06-18 | 鸿富锦精密工业（深圳）有限公司 | Camera module with liquid crystal type shutter |
| CN101930129A (en) * | 2009-06-26 | 2010-12-29 | 梁卓樑 | Thin film transistor liquid crystal panel with functions of camera shutter |
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