CN102634284A - Polishing solution and preparation method thereof - Google Patents
Polishing solution and preparation method thereof Download PDFInfo
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- CN102634284A CN102634284A CN2012100836353A CN201210083635A CN102634284A CN 102634284 A CN102634284 A CN 102634284A CN 2012100836353 A CN2012100836353 A CN 2012100836353A CN 201210083635 A CN201210083635 A CN 201210083635A CN 102634284 A CN102634284 A CN 102634284A
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Abstract
The invention discloses a polishing solution and a preparation method thereof. The polishing solution comprises the following components in parts by weight: 1-1.2 parts of trisodium phosphate, 1.5-2 parts of anhydrous sodium sulfate, 5-7 parts of sodium bicarbonate, 1-1.5 parts of citric acid, and the components are dissolved in water and mixed uniformly. In addition, the pH value of the mixed solution is adjusted to be 7 by changing the weight of added water. By adopting the polishing solution provided by the invention, the dependence on rare earth oxide is reduced, the cost can be saved, the requirements of various products/parts on polishing treatment are met, the polishing efficiency, the cleaning effect and the surface accuracy of the polished product are improved, and fluorin content is reduced. The polishing solution is polishing materials which is economic, practical, environment-friendly and has stronger adaptability and wide application prospect.
Description
Technical field
The present invention relates to a kind of polishing technology of production technique, especially relate to a kind of polishing fluid that various opticglass devices, television picture tube, optical lens, oscillatron, sheet glass, semiconductor wafer and metal precision goods etc. carry out polished finish that is used for.
Background technology
In that the accurate goods of various opticglass devices, television picture tube, optical lens, oscillatron, sheet glass, semiconductor wafer and metal are carried out in the course of processing, carry out polished finish by polishing fluid and be absolutely necessary.
Polishing fluid is mainly cooked the polishing friction agent with large particle rare-earth oxide (CeO2), and overall polishing speed is low, and dispersion stabilization is poor, causes serious surface tear easily, also has defectives such as the graduation polishing efficiency is low.Long-time polishing often reduces polishing efficiency greatly, causes the rapid wearing of polishing machine, and production efficiency is low, and the consumption of a large amount of consumptive materials.The particle diameter control of polishing powder is normally accomplished through multistage pneumatic separation.Because micron and submicron agent solid particulate have very high specific surface activation energy, agglomeration causes granularity and the distribution that selection by winnowing can't strict control polishing powder abrasive, causes the performance of polishing powder aspect scuffing to be difficult to stable control.
In addition, though China has abundant cerium resource, this has established solid basis for the polishing powder from rare earth of China's sustainable development from now on, also is the exclusive big advantage of China, and can promote China's rare-earth industry to continue high speed development.Simultaneously, along with the continuous innovation of modern science and technology, the development of the industry high speed of countries in the world, polishing powder from rare earth ever-growing use, consumption surge.The exploitation of spreading unchecked has caused China's rare earth resources (Nonrenewable resources) seriously in short supply, therefore, in polishing fluid, reduces the dependence to rare earth oxide, has become one of technical barrier of current urgent need solution.
Summary of the invention
The present invention proposes a kind of polishing fluid and method of manufacture thereof of economic, practical, environmental protection, when reducing rare earth composition content, more can satisfy the polished finish requirement of each product/component.
The present invention adopts following technical scheme to realize: a kind of polishing fluid, it comprises: the tsp that weight ratio is 1～1.2 part, 1.5～2 parts SODIUM SULPHATE ANHYDROUS 99PCT, 5～7 parts sodium hydrogencarbonate, 1～1.5 part Hydrocerol A are water-soluble and mixed evenly.And the weight that adds entry through change is regulated pH value=7 of mixing solutions.
In a preferred embodiment, polishing fluid comprises: the sodium hydrogencarbonate of the tsp of weight 70g, the SODIUM SULPHATE ANHYDROUS 99PCT of 105g, 350g, the Hydrocerol A of 70g are dissolved in the water of weight 38000g and mix.
In a preferred embodiment, polishing fluid comprises: the sodium hydrogencarbonate of the tsp of weight 84g, the SODIUM SULPHATE ANHYDROUS 99PCT of 140g, 490g, the Hydrocerol A of 105g are dissolved in weight 50000g water and mix.
In a preferred embodiment, polishing fluid comprises: the sodium hydrogencarbonate of the tsp of weight 68g, the SODIUM SULPHATE ANHYDROUS 99PCT of 120g, 450g, the Hydrocerol A of 70g are dissolved in weight 42000g water and mix.
In addition, the present invention discloses a kind of method of manufacture of polishing fluid, and it comprises step:
By weight, 1～1.2 part tsp, 1.5～2 parts SODIUM SULPHATE ANHYDROUS 99PCT, 5～7 parts sodium hydrogencarbonate, 1～1.5 part Hydrocerol A is water-soluble and mixed evenly;
PH value=7 that add the weight adjusting mixing solutions of entry through change.
Compared with prior art, the present invention has following beneficial effect:
The polishing fluid that the present invention proposes has reduced the dependence to rare earth oxide, can practice thrift cost, more can satisfy the polished finish requirement of each product/component.Use polishing fluid of the present invention, polishing efficiency is high, approximately can promote 10% polishing efficiency; Significantly reduce and thrown the product surface dirt settling, improve cleaning performance; Can suitably improve and thrown the product surface precision, can satisfy the concerned process steps test request; Significantly reduce fluorine content, improve the feature of environmental protection, suitability is strong.Therefore, the polishing fluid that the present invention proposes is a kind of brand-new polishing material of economic, practical, environmental protection, has broad application prospects.
Embodiment
Embodiment 1
By weight; With 1～1.2 part tsp (also being sodium orthophosphate, molecular formula Na3PO4), 1.5～2 parts SODIUM SULPHATE ANHYDROUS 99PCT, 5～7 parts sodium hydrogencarbonate (having another name called sodium bicarbonate or roasting alkali, molecular formula NaHCO3), Hydrocerol A (its chemical name: 2-hydroxyl-1 of 1～1.5 part; 2; 3-three carboxyl propane) water-soluble, and pH value=7 of the weight regulator solution through adding entry, polishing fluid obtained.
Embodiment 2
The Hydrocerol A that accurately takes by weighing sodium hydrogencarbonate, the 70g of SODIUM SULPHATE ANHYDROUS 99PCT, the 350g of tsp, the 105g of weight 70g is dissolved in weight 10000g water and mixes; And the water that adds weight 28000g mixes; The pH value of final blending solution=7 obtain polishing fluid.
Made polishing fluid is carried out polished finish to sheet glass on SpeedFam 9B Twp-sided polishing machine.Press down: 0.1kg/cm2, lower wall and load plate rotating speed 30RPM, polishing fluid flow velocity: 200ml/ minute.The polishing fluid polishing speed of this embodiment is respectively 612 nm/minute, surface of plate glass no marking, polishing machine not damaged.
Embodiment 3
The Hydrocerol A that accurately takes by weighing sodium hydrogencarbonate, the 105g of SODIUM SULPHATE ANHYDROUS 99PCT, the 490g of tsp, the 140g of weight 84g is dissolved in weight 50000g water and mixes, and the pH value of mixing solutions=7 obtain polishing fluid.
As above made polishing fluid carries out polished finish to silicon chip (being a kind of semiconductor wafer) on Logitech CDP single side polishing machine.Polishing machine presses down: 1psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.Silicon wafer polishing speed is 247 nm/minute.
Embodiment 4
The Hydrocerol A that accurately takes by weighing sodium hydrogencarbonate, the 80g of SODIUM SULPHATE ANHYDROUS 99PCT, the 410g of tsp, the 120g of weight 75g is dissolved in weight 4300g water and mixes, and the pH value of mixing solutions=7 obtain polishing fluid.
As above made polishing fluid carries out polished finish to copper sheet on Logitech CDP single side polishing machine.Polishing machine presses down: 1psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.The copper sheet polishing speed is 378 nm/minute.
Embodiment 5
The tsp that accurately takes by weighing weight 68g is dissolved in the water of weight 3000g, and the SODIUM SULPHATE ANHYDROUS 99PCT that accurately takes by weighing weight 120g again is dissolved in the water of weight 6000g, obtains mixture A; The sodium hydrogencarbonate that accurately takes by weighing weight 450g is dissolved in the water of weight 10000g, mixes with mixture A again, obtains mixture B; The Hydrocerol A that accurately takes by weighing weight 70g is dissolved in the water of weight 3000g, mixes with mixture B again, obtains mixture C; With the water that adds weight 20000g in the mixture C, regulate pH value=7 of mixing solutions, promptly obtained polishing fluid of the present invention.
With as above made polishing fluid, on Logitech CDP single side polishing machine, optical lens is carried out polished finish.Polishing machine presses down: 1psi, and lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute, the polishing speed of optical lens was 648 nm/minute.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a polishing fluid is characterized in that, comprising: the tsp that weight ratio is 1～1.2 part, 1.5～2 parts SODIUM SULPHATE ANHYDROUS 99PCT, 5～7 parts sodium hydrogencarbonate, 1～1.5 part Hydrocerol A are water-soluble and mixed evenly.
2. according to the said polishing fluid of claim 1, it is characterized in that, add pH value=7 of the weight adjusting mixing solutions of entry through change.
3. according to claim 1 or 2 said polishing fluids, it is characterized in that, comprising: the sodium hydrogencarbonate of the tsp of weight 70g, the SODIUM SULPHATE ANHYDROUS 99PCT of 105g, 350g, the Hydrocerol A of 70g are dissolved in the water of weight 38000g and mix.
4. according to claim 1 or 2 said polishing fluids, it is characterized in that, comprising: the sodium hydrogencarbonate of the tsp of weight 84g, the SODIUM SULPHATE ANHYDROUS 99PCT of 140g, 490g, the Hydrocerol A of 105g are dissolved in weight 50000g water and mix.
5. according to claim 1 or 2 said polishing fluids, it is characterized in that, comprising: the sodium hydrogencarbonate of the tsp of weight 68g, the SODIUM SULPHATE ANHYDROUS 99PCT of 120g, 450g, the Hydrocerol A of 70g are dissolved in weight 42000g water and mix.
6. the method for manufacture of a polishing fluid is characterized in that, comprises step:
By weight, 1～1.2 part tsp, 1.5～2 parts SODIUM SULPHATE ANHYDROUS 99PCT, 5～7 parts sodium hydrogencarbonate, 1～1.5 part Hydrocerol A is water-soluble and mixed evenly;
PH value=7 that add the weight adjusting mixing solutions of entry through change.
7. according to the method for manufacture of the said polishing fluid of claim 6, it is characterized in that, comprising: the sodium hydrogencarbonate of the tsp of weight 70g, the SODIUM SULPHATE ANHYDROUS 99PCT of 105g, 350g, the Hydrocerol A of 70g are dissolved in the water of weight 38000g and mix.
8. according to the method for manufacture of the said polishing fluid of claim 6, it is characterized in that, comprising: the sodium hydrogencarbonate of the tsp of weight 84g, the SODIUM SULPHATE ANHYDROUS 99PCT of 140g, 490g, the Hydrocerol A of 105g are dissolved in weight 50000g water and mix.
9. according to the method for manufacture of the said polishing fluid of claim 6, it is characterized in that, comprising: the sodium hydrogencarbonate of the tsp of weight 68g, the SODIUM SULPHATE ANHYDROUS 99PCT of 120g, 450g, the Hydrocerol A of 70g are dissolved in weight 42000g water and mix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012100836353A CN102634284A (en) | 2012-03-27 | 2012-03-27 | Polishing solution and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100836353A CN102634284A (en) | 2012-03-27 | 2012-03-27 | Polishing solution and preparation method thereof |
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| CN2012100836353A Pending CN102634284A (en) | 2012-03-27 | 2012-03-27 | Polishing solution and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506637A (en) * | 2015-12-01 | 2016-04-20 | 安徽天思朴超精密模具股份有限公司 | Metal polishing agent material composition and preparation method and application of metal polishing agent |
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| CN1218077A (en) * | 1997-11-06 | 1999-06-02 | 国际商业机器公司 | PH-buffered slurry and use thereof for polishing |
| KR20020009648A (en) * | 2000-07-26 | 2002-02-02 | 홍석 | Liquid detergent composite |
| JP2003286477A (en) * | 2002-03-28 | 2003-10-10 | Sumitomo Bakelite Co Ltd | Polishing composition and polishing method |
| JP2004327614A (en) * | 2003-04-23 | 2004-11-18 | Sumitomo Metal Mining Co Ltd | Polishing solution for iii-v compound semiconductor wafer and method for polishing iii-v compound semiconductor wafer using the same |
| CN101333421A (en) * | 2007-06-29 | 2008-12-31 | 第一毛织株式会社 | Chemical mechanical polishing slurry composition and polishing method |
| CN101399164A (en) * | 2007-09-26 | 2009-04-01 | 北京有色金属研究总院 | Semi-insulation gallium arsenide wafer double face finishing method |
| CN101544871A (en) * | 2009-04-22 | 2009-09-30 | 孙韬 | Efficient scratch-free glass polishing solution and manufacturing method thereof |
| CN101712848A (en) * | 2008-10-06 | 2010-05-26 | 天津市化学试剂研究所 | Metal vibration polishing solution and preparation method thereof |
-
2012
- 2012-03-27 CN CN2012100836353A patent/CN102634284A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1218077A (en) * | 1997-11-06 | 1999-06-02 | 国际商业机器公司 | PH-buffered slurry and use thereof for polishing |
| KR20020009648A (en) * | 2000-07-26 | 2002-02-02 | 홍석 | Liquid detergent composite |
| JP2003286477A (en) * | 2002-03-28 | 2003-10-10 | Sumitomo Bakelite Co Ltd | Polishing composition and polishing method |
| JP2004327614A (en) * | 2003-04-23 | 2004-11-18 | Sumitomo Metal Mining Co Ltd | Polishing solution for iii-v compound semiconductor wafer and method for polishing iii-v compound semiconductor wafer using the same |
| CN101333421A (en) * | 2007-06-29 | 2008-12-31 | 第一毛织株式会社 | Chemical mechanical polishing slurry composition and polishing method |
| CN101399164A (en) * | 2007-09-26 | 2009-04-01 | 北京有色金属研究总院 | Semi-insulation gallium arsenide wafer double face finishing method |
| CN101712848A (en) * | 2008-10-06 | 2010-05-26 | 天津市化学试剂研究所 | Metal vibration polishing solution and preparation method thereof |
| CN101544871A (en) * | 2009-04-22 | 2009-09-30 | 孙韬 | Efficient scratch-free glass polishing solution and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506637A (en) * | 2015-12-01 | 2016-04-20 | 安徽天思朴超精密模具股份有限公司 | Metal polishing agent material composition and preparation method and application of metal polishing agent |
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Application publication date: 20120815 |