CN102629758B - Voltage comparator-based drop gate voltage circuit - Google Patents
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Abstract
The invention discloses a voltage comparator-based drop gate voltage circuit, which comprises a voltage-dividing resistor R1, a drop gate voltage speed regulating circuit, a first stage of drop gate voltage unit, a second stage of drop gate voltage unit and a third stage of drop gate voltage unit, wherein an output end of the voltage-dividing resistor R1 is connected with an input end of the drop gate voltage speed regulating circuit; output ends of the three drop gate voltage units are connected with the output end of the voltage-dividing resistor R1 and the input end of the drop gate voltage speed regulating circuit respectively; and another output end of a previous stage of drop gate voltage unit is connected with an input end of a next stage of drop gate voltage unit. Three-stage drop gate voltage protection is adopted when a protected power tube encounters over-current; accurate judgment and quick response are performed on over-current threshold voltage by the drop gate voltage units by using a voltage comparator; induced voltage produced during turn-off of the protected power tube can be reduced by the drop gate voltage speed regulating circuit; high-reliability protection over the protected power tube can be realized; and the voltage comparator-based drop gate voltage circuit is particularly suitable for being used in severe environments and at places with high accuracy requirements.
Description
Technical Field
The invention belongs to the technical field of electronics, and further relates to a circuit for reducing grid voltage of a power field effect transistor (MOSFET) or an Insulated Gate Bipolar Transistor (IGBT) in the technical field of power electronics.
Background
At present, in the technical field of power electronics, there are two protection measures for overcurrent or short circuit of a common MOSFET or IGBT power tube: one is soft turn-off and the other is reduced gate voltage. The soft turn-off means that when an overcurrent or short-circuit signal of the device is detected, the grid signal of the protected power tube is quickly removed, so that the MOSFET or IGBT protected power tube is turned off; the gate voltage reduction means that when an overcurrent or short-circuit signal of the device is detected, the gate voltage of the protected power tube of the MOSFET or the IGBT is immediately reduced to a certain level, but the device is still kept conducting.
The soft turn-off has poor anti-interference capability, and the device is turned off as soon as a fault is detected, so that misoperation is easy to occur, therefore, in order to increase the anti-interference capability of the protection circuit, a fixed time delay is often added between the obtaining of a fault signal and the starting of the protection circuit, but the fault current can sharply rise in the fixed time delay, so that the power loss of the device during the fault is greatly increased; meanwhile, the increase of fault current also increases di/dt of the protected power tube when the protected power tube is turned off, and the parameter design between the di/dt and the protected power tube is difficult to compromise, so that the driving circuit for soft turn-off protection is usually started by the protection circuit when a fault occurs, but the device is still damaged. The anti-interference capability of the grid voltage is strong, a fixed time delay is set after the grid voltage is reduced, and if the fault signal still exists after the time delay, the device is turned off. The fault current will be limited to a small value during this delay. Due to the limitation of fault current, the power loss of the device during fault is reduced, and the short-circuit resistant time of the device is prolonged; and moreover, di/dt of the protected power tube during turn-off can be reduced, which is very beneficial to the protection of the device. In time delay, if the fault signal disappears, the driving circuit can automatically recover to the normal working state, thereby greatly enhancing the anti-interference capability of the circuit.
The guangdong yi te power supply limited company disclosed a driving circuit for suppressing an IGBT overcurrent in its patent application document (application publication No. CN 102315632a, application No. 201110310792.9, application date 2011.10.14), in which a gate voltage reduction clamp circuit controls the slow reduction of the gate voltage of a protected power tube by charging a capacitor, so as to achieve the purpose of soft turn-off. The patent application document "IGBT driver with complete protection" (application publication No. CN102290795A, application No. 201110252637.6, application date 2011.08.30) of sincerous electric energy equipment limited company in east guan city discloses an IGBT driver with complete protection, which breaks down a zener diode by an overcurrent signal and achieves the purpose of delayed turn-off by using an RC loop with a certain charging time. The problems common to the circuits disclosed in these two patent applications are: the circuit achieves the purpose of turning off the protected power tube by charging the capacitor, the protection circuit only achieves two-stage grid voltage reduction, namely the grid voltage of the protected power tube is reduced to a certain specific level after the circuit detects an overcurrent signal, and if the overcurrent signal still exists, the grid voltage of the protected power tube is slowly reduced to 0V; if the specific level is set to be too high, the overcurrent phenomenon of the protected power tube is not obviously inhibited, and if the specific level is set to be too low, the protected power tube has the problem of repeated switching-on and switching-off within a time delay; the grid voltage reduction circuit uses a voltage stabilizing diode as a judgment device of an overcurrent signal, the temperature has certain influence on the work of the voltage stabilizing diode, when the temperature is overhigh, the actual breakdown voltage of the voltage stabilizing diode and the nominal breakdown voltage of the voltage stabilizing diode have certain difference, and under extreme conditions, the grid voltage reduction protection circuit can be protected due to overcurrent of the circuit; the protection circuit is not provided with a circuit for adjusting the rising time and the falling time of the grid voltage of the protected power tube.
The gate voltage reduction circuit in the application of the gate voltage reduction technology in MOSFET drive (power system and the report of the automation thereof, 2010.02: 1-4) published by Yangdongping, Wangli, Jiangtongyu and the research on novel IGBT drive and protection circuit (electric welding machine, 2007.07: 61-63) published by Tiansha, Ganzhenhua, Sun Shu and Xiweiliang all charges a capacitor through an overcurrent signal and then realizes the protection of the MOSFET or the IGBT protected power tube through the voltage breakdown voltage stabilizing diode at the two ends of the capacitor. The common problems of the circuits disclosed in these two papers are the same as those of the "IGBT overcurrent suppressing drive circuit" and the "well-protected IGBT driver" patent application.
Disclosure of Invention
In order to overcome the problems in the prior art, a voltage comparator based gate voltage reduction circuit is provided, which can ensure that a protected power tube is protected with high reliability.
The grid voltage reduction circuit comprises a divider resistor R1, a grid voltage reduction speed regulation circuit, a first-stage grid voltage reduction unit, a second-stage grid voltage reduction unit and a third-stage grid voltage reduction unit. The output end of the divider resistor R1 is connected with the input end of the grid voltage reduction speed regulating circuit. One output end of the first-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulating circuit, and the output end of the delay signal is connected with the non-inverting input end of the second-stage grid voltage reduction unit. One output end of the second-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulating circuit, and the output end of the delay signal is connected with the non-inverting input end of the third-stage grid voltage reduction unit. The output end of the third-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulation circuit; the divider resistor R1 is respectively connected with the resistors R4, R3 and R2 in the first-stage grid voltage reduction unit, the second-stage grid voltage reduction unit and the third-stage grid voltage reduction unitVoltage divider circuit for generating protectionAnd protecting the driving voltage of the grid electrode of the power tube. A gate voltage reduction speed regulating circuit for regulating the rising time T of the protected power tuberAnd the fall time T of the turn-offf。
The first-stage grid voltage reduction unit is used for generating a first-stage pre-protection voltage and a second-stage delay starting voltage, and the first-stage pre-protection voltage is used for reducing the grid voltage of the protected power tube to the voltage required by the first-stage pre-protection; the second stage delay starting voltage is used for driving the voltage for starting the second stage grid voltage reduction unit.
The second-stage grid voltage reduction unit is used for generating a second-stage protection voltage and a third-stage delay starting voltage, and the second-stage protection voltage is used for reducing the grid voltage of the protected power tube to the required voltage required by the starting threshold; the third stage delay starting voltage is used for driving the voltage for starting the third stage grid voltage reduction unit.
And the third-stage grid voltage reduction unit is used for generating a third-stage protection turn-off voltage required by slowly reducing the grid voltage of the protected power tube to 0V.
Compared with the prior art, the invention has the following advantages:
firstly, the invention adopts a three-stage grid voltage reduction circuit to protect the protected power tube, and overcomes the problems that the grid voltage reduction only adopts two-stage protection in the prior art, the overcurrent phenomenon of the protected power tube is not obviously inhibited, and the protected power tube is repeatedly switched on and switched off within a time delay. The invention can start the first-stage grid voltage reduction unit to pre-protect the protected power tube when the power tube has a fault, and then carry out corresponding protection treatment according to the fault state, thereby effectively preventing misoperation, arbitrarily adjusting the starting time of the adjacent two-stage grid voltage reduction units according to actual requirements, and increasing the grid voltage reduction units according to requirements to realize more-stage grid voltage reduction.
Secondly, the voltage comparator is adopted to judge the set overcurrent threshold voltage, the problem of low precision caused by judging the overcurrent threshold voltage by using the voltage stabilizing diode in the prior art is solved, the accurate judgment and the rapid response of the overcurrent threshold voltage are realized, and the corresponding overcurrent level can be responded as long as different threshold voltages are set, so that the circuit is more flexible to apply, easier to debug and suitable for mass production.
Thirdly, the invention adopts the grid voltage reduction speed regulating circuit, overcomes the problem that the grid voltage reduction circuit in the prior art is not slowly switched on or off, realizes the regulation of the grid voltage reduction speed, can flexibly set the speed of grid voltage reduction or rise according to the requirement, reduces the induction voltage generated when the protected power tube is switched off, and thereby prolongs the service life of the protected power tube.
Drawings
FIG. 1 is a block diagram of the present invention;
FIG. 2 is an electrical schematic of the present invention;
fig. 3 is a schematic diagram of the process of protecting the protected power transistor according to the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
The circuit of the present invention is described in detail with reference to fig. 1.
The input end of the divider resistor R1 is connected with a driving signal, the output end of the divider resistor R1 is connected with the input end of the grid voltage reduction speed regulating circuit, and the output of the grid voltage reduction speed regulating circuit is a grid voltage reduction protection signal; one output end of the first-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulating circuit, and the output end of the delay signal is connected with the non-inverting input end of the second-stage grid voltage reduction unit; one output end of the second-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulating circuit, and the output end of the delay signal is connected with the non-inverting input end of the third-stage grid voltage reduction unit; the output end of the third stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulation circuit.
The divider resistor R1 is respectively formed by the resistors R4, R3 and R2 in the first-stage grid voltage reduction unit, the second-stage grid voltage reduction unit and the third-stage grid voltage reduction unitThe voltage division circuit is used for generating a driving voltage for protecting the grid electrode of the protected power tube; the voltages divided by the resistor R2, the resistor R3 and the resistor R4 are respectively the voltage required by the third-stage protection turn-off voltage, the second-stage protection voltage and the first-stage pre-protection voltage, and the power consumption of the voltage dividing resistor R1, the resistor R2, the resistor R3 and the resistor R4 cannot exceed the rated power consumption.
A gate voltage reduction speed regulating circuit for regulating the rising time T of the protected power tuberAnd the fall time T of the turn-offf(ii) a One end of a resistor R5 in the grid voltage reduction speed regulation circuit is connected with the output end of a divider resistor R1, the other end of the resistor R5 is connected with one end of a capacitor C1, and the other end of the capacitor C1 is connected with GND; the value principle of the resistor R5 and the capacitor C1 is that the time of the gate voltage reduction speed regulation circuit formed by the resistor R5 and the capacitor C1 is as follows:wherein t is the rising time of the conduction and the falling time of the disconnection of the protected power tube, U is the voltage for charging the capacitor C, and U is the voltage for charging the capacitor CCThe voltage reached by two ends of a capacitor C during charging is obtained, the capacitor C is a delay capacitor C1 in the circuit, a resistor R is a delay resistor R5 in the circuit, and the value of the resistor R5 is required to be as small as possible.
The specific connection relationship of the components in the electrical schematic diagram of the present invention is described in detail with reference to fig. 2.
The positive power end of a voltage comparator U1A in the first-stage grid voltage reduction unit is connected with VCC, the negative power end is connected with GND, the inverting input end is connected with reference voltage, the non-inverting input end is connected with an overcurrent signal, the output end is respectively connected with one end of a resistor R6 and one end of a resistor R7, the other end of the resistor R6 is connected with the base of a triode Q3, the emitter of a triode Q3 is connected with GND, the collector of the triode Q3 is connected with the cathode of a diode D3, the anode of a diode D3 is connected with one end of a resistor R4, and the other end of a resistor R4 is connected with the output end of a divider resistor R483; an inverting input end of a voltage comparator U1B in the second-stage grid voltage reduction unit is connected with a reference voltage, a non-inverting input end of the voltage comparator U1B is connected with one end of a resistor R7 and one end of a capacitor C2 respectively, the other end of C2 is connected with GND, an output end of the voltage comparator U1B is connected with one end of a resistor R8 and one end of a resistor R9 respectively, the other end of a resistor R8 is connected with a base electrode of a triode Q2, an emitter electrode of a triode Q2 is connected with GND, a collector electrode of a diode D2 is connected, an anode of a diode D2 is connected with one end of a resistor R3, and the other end of a resistor R3 is connected with an output end of; an inverting input end of a voltage comparator U1C in the third-stage grid voltage reduction unit is connected with a reference voltage, a non-inverting input end of the voltage comparator U1C is connected with one ends of a resistor R9 and a capacitor C3 respectively, the other end of the C3 is connected with GND, an output end of the voltage comparator U1C is connected with one end of a resistor R10, the other end of the resistor R10 is connected with a base electrode of a triode Q1, an emitter electrode of a triode Q1 is connected with GND, a collector electrode of a diode D1 is connected with a cathode, an anode of a diode D1 is connected with one end of a resistor R2, and the other end of a resistor R2 is connected with an output end of a voltage dividing.
The process of the invention for protecting protected power transistors is described in detail with reference to fig. 3.
The switch control signal is input to the input end of the drive control circuit after being isolated by the isolation circuit, the drive control circuit processes the switch control signal, the output end of the drive control circuit is connected with one input end of the grid voltage reduction protection circuit, the input end of the protected POWER tube is connected with the POWER supply POWER, the output end of the protected POWER tube is connected with one end of the sampling resistor, the other end of the sampling resistor is connected with one end of the load, the other end of the load is connected with the POWER-GND, the voltage difference value of the two ends of the sampling resistor is amplified by the current detection amplifying circuit to obtain an overcurrent signal, the overcurrent signal output by the current detection amplifying circuit is input to the other input end of the grid voltage reduction protection circuit, and the output end of the grid voltage reduction protection circuit is connected with the grid electrode of the protected.
When an overcurrent signal appears, the first-stage grid voltage reduction unit is started, the grid voltage of the protected power tube is reduced to a set value, the protected power tube is pre-protected, the protected power tube is in an edge state to be completely conducted, meanwhile, the voltage output by a voltage comparator U1A in the first-stage grid voltage reduction unit charges a capacitor C2 through a resistor R7 to generate a second-stage delay starting voltage, and if the overcurrent signal disappears within a fixed delay, the protected power tube restores to the completely conducted state; if the overcurrent signal still exists after a fixed time delay, the second-stage grid voltage reduction unit is started to reduce the grid voltage of the protected power tube to the starting threshold voltage value, the power tube is protected, and at the moment, the protected power tube is in a state of being started. Meanwhile, the voltage output by a voltage comparator U1B in the second-stage grid voltage reduction unit charges a capacitor C3 through a resistor R9 to generate a third-stage delay starting voltage, and if an overcurrent signal disappears within a fixed delay, the protected power tube restores to a completely conducted state; and if the overcurrent signal still exists after a fixed time delay, starting the third-stage grid voltage reduction unit to slowly reduce the grid voltage of the protected power tube to 0V, and at the moment, closing the protected power tube. The fixed delay is calculated by the formula:wherein R is a delay resistor, C is a delay capacitor, U is a voltage for charging the capacitor, and U isCIs the voltage reached across the capacitor as it charges.
The embodiment of the invention is that the values of the resistors R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 can be 1k Ω, 0 Ω, 500 Ω, 2k Ω, 100 Ω, 5k Ω, 2k Ω, and 5k Ω respectively, the values of the capacitors C1, C2 and C3 can be 103F, 102F and 102F respectively, the values of the voltage comparators U1A, U1B and U1C are LM339AD, the diodes D1, D2 and D3 are 41in 48, the triodes Q1, Q2 and Q3 are C9013, the reference voltage is 7.5V, the positive power supply is 15V, the ground is analog ground, the range of the first-stage pre-protection voltage is 8 ± 0.5V, the range of the second-stage delay starting voltage is 7.5V, the range of the GND power supply is 15V, the third-stage protection voltage is 0.05 ± 0.5V, and the range of the third-stage protection voltage is 0.05V.
The invention uses the voltage comparator to judge the overcurrent threshold voltage, and outputs signals to control the on and off of the triode so as to control the voltage obtained on the divider resistor, thereby achieving the purpose of protecting the protected power tube. The grid voltage of the protected power tube is firstly reduced to a set level by the grid voltage reducing protection circuit after the grid voltage reducing protection circuit detects an overcurrent signal, the protected power tube is pre-protected, then corresponding protection processing is carried out according to the fault state, misoperation can be effectively prevented, the induced voltage generated when the protected power tube is turned off is reduced, the protected power tube is protected with high reliability, the circuit has high precision, the grid voltage reducing protection circuit is suitable for being used in certain occasions with severe environments and high precision requirements, the circuit is simple to debug, and the grid voltage reducing protection circuit is suitable for mass production.
Claims (6)
1. A grid voltage reduction circuit based on a voltage comparator comprises a divider resistor R1, a grid voltage reduction speed regulating circuit, a first-stage grid voltage reduction unit, a second-stage grid voltage reduction unit and a third-stage grid voltage reduction unit; the output end of the divider resistor R1 is connected with the input end of the grid voltage reduction speed regulating circuit; one output end of the first-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulating circuit, and the delay signal output end of the first-stage grid voltage reduction unit is connected with the non-inverting input end of the second-stage grid voltage reduction unit; one output end of the second-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulating circuit, and the delay signal output end of the second-stage grid voltage reduction unit is connected with the non-inverting input end of the third-stage grid voltage reduction unit; the output end of the third-stage grid voltage reduction unit is connected with the output end of the divider resistor R1 and the input end of the grid voltage reduction speed regulation circuit; wherein,
the divider resistor R1 is respectively formed by the resistors R4, R3 and R2 in the first-stage grid voltage reduction unit, the second-stage grid voltage reduction unit and the third-stage grid voltage reduction unitThe voltage division circuit is used for generating a driving voltage for protecting the grid electrode of the protected power tube;
the grid voltage reduction speed regulating circuit is used for regulating the rising time T of the conduction of the protected power tuberAnd the fall time T of the turn-offf；
The first-stage grid voltage reduction unit is used for generating a first-stage pre-protection voltage and a second-stage delay starting voltage, and the first-stage pre-protection voltage is used for reducing the grid voltage of the protected power tube to the voltage required by the first-stage pre-protection; the second stage delay starting voltage is used for driving the voltage for starting the second stage grid voltage reduction unit,
the second-stage grid voltage reduction unit is used for generating a second-stage protection voltage and a third-stage delay starting voltage, and the second-stage protection voltage is used for reducing the grid voltage of the protected power tube to the voltage required by the starting threshold; the third stage delayed starting voltage is used for driving the voltage for starting the third stage grid voltage reduction unit,
and the third-stage grid voltage reduction unit is used for generating a third-stage protection turn-off voltage required by slowly reducing the grid voltage of the protected power tube to 0V.
2. The voltage comparator based gate voltage reducing circuit as claimed in claim 1, wherein the values of the voltage dividing resistor R1, the resistor R2, the resistor R3 and the resistor R4 are determined by the principle that the voltage dividing resistor R1 is respectively connected with the resistor R2, the resistor R3 and the resistor R4In the circuit, the voltages divided by the resistor R2, the resistor R3 and the resistor R4 are respectively the voltages required by the third-stage protection turn-off voltage, the second-stage protection voltage and the first-stage pre-protection voltage, and the power consumption of the voltage dividing resistor R1, the resistor R2, the resistor R3 and the resistor R4 cannot exceed the rated power consumption.
3. The voltage comparator based grid voltage reduction circuit according to claim 1, wherein one end of a resistor R5 in the grid voltage reduction speed regulation circuit is connected with the output end of a voltage division resistor R1, the other end of the resistor R5 is connected with one end of a capacitor C1, and the other end of the capacitor C1 is connected with GND; the value of the resistor R5 and the capacitor C1 is that the regulation time of a grid voltage reduction speed regulation circuit formed by the resistor R5 and the capacitor C1 is as follows:wherein t is the rising time of the protected power tube on or the falling time of the protected power tube off, U is the voltage for charging the capacitor C, and U is the voltage for charging the capacitor CCThe voltage reached by two ends of a capacitor C during charging is obtained, the capacitor C is a delay capacitor C1 in the circuit, a resistor R is a delay resistor R5 in the circuit, and the value of the resistor R5 is required to be as small as possible.
4. The voltage-comparator-based grid voltage reduction circuit according to claim 1, wherein a positive power supply terminal of a voltage comparator U1A in the first-stage grid voltage reduction unit is connected with VCC, a negative power supply terminal is connected with GND, an inverting input terminal of the voltage comparator U1A is connected with a reference voltage, a non-inverting input terminal is connected with an overcurrent signal, an output terminal is connected with one end of a resistor R6 and one end of a resistor R7 respectively, the other end of the resistor R6 is connected with a base of a transistor Q3, an emitter of the transistor Q3 is connected with GND, a collector is connected with a cathode of a diode D3, and an anode of the diode D3 is connected with one end of a resistor R4; an inverting input end of a voltage comparator U1B in the second-stage grid voltage reduction unit is connected with the reference voltage, a non-inverting input end of the voltage comparator U1 is connected with the other end of a resistor R7 and one end of a capacitor C2 respectively, the other end of a C2 is connected with GND, an output end of the voltage comparator U1B is connected with one end of a resistor R8 and one end of a resistor R9 respectively, the other end of a resistor R8 is connected with a base electrode of a triode Q2, an emitter electrode of the triode Q2 is connected with GND, a collector electrode of the triode Q2 is connected with a cathode of a diode D2, and an anode of the diode D36; the inverting input end of a voltage comparator U1C in the third-stage grid voltage reduction unit is connected with the reference voltage, the non-inverting input end of the voltage comparator U1 is connected with the other end of a resistor R9 and one end of a capacitor C3 respectively, the other end of C3 is connected with GND, the output end of the voltage comparator U1C is connected with one end of a resistor R10, the other end of a resistor R10 is connected with the base electrode of a triode Q1, the emitter electrode of a triode Q1 is connected with GND, the collector electrode of a diode D1 is connected, and the anode of a diode D1 is connected with one end of a resistor R2.
5. The voltage comparator based gate voltage reduction circuit according to claim 1, wherein the first stage pre-protection voltage is in a range of 8 ± 0.5V, the second stage delayed start voltage is in a range of 7.5V to 15V, the second stage protection voltage is in a range of 5 ± 0.1V, the third stage delayed start voltage is in a range of 7.5V to 15V, and the third stage protection turn-off voltage is in a range of 0.7 ± 0.05V.
6. The voltage comparator based gate voltage reducing circuit of claim 4, wherein the values of the resistor R7, the capacitor C2, the resistor R9 and the capacitor C3 are in the following ranges: t is 0.693RC, where t is a delay time from the operation of the previous stage of the gate voltage reducing unit to the start of the operation of the next stage of the gate voltage reducing unit, R is a resistance value of the resistor R7 or R9, C is a capacitance value of the capacitor C2 or C3, and power consumption of the resistor R7 and the resistor R9 cannot exceed rated power consumption thereof.
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| CN109698611B (en) * | 2019-01-23 | 2021-02-26 | 东南大学 | Multi-stage grid voltage reduction type SiC-MOSFET drive circuit |
| CN109714033B (en) * | 2019-02-22 | 2023-06-30 | 瓴芯电子科技(无锡)有限公司 | Driving device and method for power device |
| CN112118368B (en) * | 2019-06-04 | 2021-08-24 | 宁波飞芯电子科技有限公司 | Grid voltage regulating circuit, grid voltage regulating method and sensor using grid voltage regulating circuit and grid voltage regulating method |
| CN114839501B (en) * | 2022-07-04 | 2023-08-18 | 南京宏泰半导体科技股份有限公司 | High-efficiency test system and method for turn-off voltage of junction field effect transistor |
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