CN102629631A - 光伏装置 - Google Patents

光伏装置 Download PDF

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Publication number
CN102629631A
CN102629631A CN2012100284926A CN201210028492A CN102629631A CN 102629631 A CN102629631 A CN 102629631A CN 2012100284926 A CN2012100284926 A CN 2012100284926A CN 201210028492 A CN201210028492 A CN 201210028492A CN 102629631 A CN102629631 A CN 102629631A
Authority
CN
China
Prior art keywords
semiconductor layer
layer
interlayer
type
photovoltaic devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100284926A
Other languages
English (en)
Chinese (zh)
Inventor
B·A·科列瓦尔
J·W·布雷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CN102629631A publication Critical patent/CN102629631A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
CN2012100284926A 2011-02-01 2012-02-01 光伏装置 Pending CN102629631A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/018,650 2011-02-01
US13/018,650 US20120192923A1 (en) 2011-02-01 2011-02-01 Photovoltaic device

Publications (1)

Publication Number Publication Date
CN102629631A true CN102629631A (zh) 2012-08-08

Family

ID=45528997

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012100284926A Pending CN102629631A (zh) 2011-02-01 2012-02-01 光伏装置

Country Status (5)

Country Link
US (1) US20120192923A1 (enExample)
EP (1) EP2482329A3 (enExample)
CN (1) CN102629631A (enExample)
AU (1) AU2012200546A1 (enExample)
IN (1) IN2012DE00204A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102891204A (zh) * 2012-10-17 2013-01-23 上海太阳能电池研究与发展中心 一种下层配置的n-i-p结构的CdTe薄膜太阳能电池
CN104064618A (zh) * 2014-05-16 2014-09-24 中国科学院电工研究所 一种p-i-n结构CdTe电池及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9231134B2 (en) 2012-08-31 2016-01-05 First Solar, Inc. Photovoltaic devices
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US20140246083A1 (en) * 2013-03-01 2014-09-04 First Solar, Inc. Photovoltaic devices and method of making
US11876140B2 (en) * 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US9871154B2 (en) 2013-06-21 2018-01-16 First Solar, Inc. Photovoltaic devices
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
AU2017343630B2 (en) * 2016-10-12 2021-08-05 First Solar, Inc. Photovoltaic device with transparent tunnel junction
US12021163B2 (en) 2018-12-27 2024-06-25 First Solar, Inc. Photovoltaic devices and methods of forming the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6852614B1 (en) * 2000-03-24 2005-02-08 University Of Maine Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
US20100015753A1 (en) * 2008-07-17 2010-01-21 James David Garnett High Power Efficiency, Large Substrate, Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures Grown by Molecular Beam Epitaxy at High Deposition Rate for Use in Solar Electricity Generation
CN101779290A (zh) * 2007-09-25 2010-07-14 第一太阳能有限公司 包括界面层的光伏器件
US20100180935A1 (en) * 2009-01-21 2010-07-22 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
CN102714252A (zh) * 2009-12-10 2012-10-03 乌利尔太阳能有限公司 用于太阳能发电的高功率效率多晶CdTe薄膜半导体光伏电池结构
US20120024360A1 (en) * 2010-07-28 2012-02-02 General Electric Company Photovoltaic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6852614B1 (en) * 2000-03-24 2005-02-08 University Of Maine Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
CN101779290A (zh) * 2007-09-25 2010-07-14 第一太阳能有限公司 包括界面层的光伏器件
US20100015753A1 (en) * 2008-07-17 2010-01-21 James David Garnett High Power Efficiency, Large Substrate, Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures Grown by Molecular Beam Epitaxy at High Deposition Rate for Use in Solar Electricity Generation
US20100180935A1 (en) * 2009-01-21 2010-07-22 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102891204A (zh) * 2012-10-17 2013-01-23 上海太阳能电池研究与发展中心 一种下层配置的n-i-p结构的CdTe薄膜太阳能电池
CN102891204B (zh) * 2012-10-17 2015-03-18 上海太阳能电池研究与发展中心 一种下层配置的n-i-p结构的CdTe薄膜太阳能电池
CN104064618A (zh) * 2014-05-16 2014-09-24 中国科学院电工研究所 一种p-i-n结构CdTe电池及其制备方法

Also Published As

Publication number Publication date
IN2012DE00204A (enExample) 2015-06-19
EP2482329A3 (en) 2015-04-08
US20120192923A1 (en) 2012-08-02
AU2012200546A1 (en) 2012-08-16
EP2482329A2 (en) 2012-08-01

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Application publication date: 20120808