CN102623562A - Method for preparing black silicon material by using low-concentration alkali solution - Google Patents
Method for preparing black silicon material by using low-concentration alkali solution Download PDFInfo
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- CN102623562A CN102623562A CN2012100899530A CN201210089953A CN102623562A CN 102623562 A CN102623562 A CN 102623562A CN 2012100899530 A CN2012100899530 A CN 2012100899530A CN 201210089953 A CN201210089953 A CN 201210089953A CN 102623562 A CN102623562 A CN 102623562A
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- alkali solution
- black silicon
- silicon material
- aqueous slkali
- low
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for preparing a black silicon material by using a low-concentration alkali solution. The specified concentration of the alkali solution is a determined value between 0.2% and 1.9% by weight percent. The method comprises the following steps of: heating the alkali solution to a determined temperature between 20 DEG C and 90 DEG C, then immersing a cleaned and polished crystalline silicon wafer into the alkali solution, and simultaneously applying ultrasonic waves to the alkali solution to etch black silicon in a jungle structure or a densely-distributed cave form on the surface of the silicon wafer. The invention has the advantages of simple process and low cost. Harmful substances to the environment cannot be produced.
Description
Technical field
The present invention relates to a kind of method of making black silicon material, particularly relate to a kind of process that is used for making solar cell, the method for using low concentration alkali solution corrosion crystal silicon chip to make black silicon material.
Background technology
Adopt suitable etching or corroding method; Produce the circular cone of nanoscale, the forest structure of cylinder or the cave of dense distribution on the level and smooth surface of crystal silicon chip; Because such structure has high absorptivity to each frequency photon; The visible light of crystal silicon chip surface reflection seldom, thereby demonstrate black, the crystal silicon chip that therefore has such surface characteristics is called as " black silicon ".Black silicon is a kind of novel silicon materials, has excellent photoelectric character.The reflectivity of general black silicon face is lower than 2%, and has same characteristic for the light of oblique incidence.In the use of solar cell, such characteristic can increase substantially the energy output of solar cell, thereby reduces the cost of photovoltaic generation.
At present, making the technology of deceiving silicon mainly contains:
1. utilize femto-second laser, etch silicon under the sulphur gaseous environment, this is to find the black employed method of silicon.
2. the plasma immersion ion injection technique prepares black silicon material, will deceive silicon and put into the plasma injection device, has the reactive ion and the silicon chip reaction of corrasion in the plasma, and the etching silicon chip surface forms black silicon.
Above-mentioned two kinds of methods all require to use complicated, expensive equipment, complex technical process, and the chemical substance of using dichloro hydrogen silicon (SiH for example
2Cl
2), silicon tetrachloride (SiCl
4), barium chloride (BaCl
2), phosphorus trifluoride (PF
3), hydrogen fluoride (HF), hydrogen chloride (HCl), sulfur fluoride (SF
6) to wait be extremely harmful, be difficult in production practices, promote.
3. acid corrosion corrosion method also can obtain black silicon.But, including hydrofluoric acid in the acid corrosion liquid, hydrofluoric acid is to environment and biological extremely harmful material.
Summary of the invention
Deficiency to prior art the objective of the invention is to, and a kind of method of making black silicon material is provided, and to reduce the cost that black silicon is made, simplifies the process for making of black silicon, and waste liquid of avoiding producing in the black silicon manufacture process or waste gas are to the infringement of environment.
For solving the problems of the technologies described above; The technical scheme that the present invention adopts is: a kind of method of using low concentration alkali solution to make black silicon material; It is characterized in that: the silicon chip that will clean and polish is immersed in the low concentration alkali solution of normal concentration; The range of choice of alkaline concentration is weight ratio content 0.2%-1.9%, simultaneously aqueous slkali is applied ultrasonic wave.
When silicon chip is immersed in the aqueous slkali, keep the temperature-resistant of aqueous slkali, the range of choice of aqueous slkali temperature is 20 ℃-90 ℃.
The invention has the beneficial effects as follows: avoid the use of complicacy, the equipment of costliness and the material extremely harmful environment; Use common low concentration alkali solution and conventional ultrasonic cleaning device; Reduced production cost, reduced harm, be convenient in large-scale production, promote environment.
Embodiment
For further disclosing technical scheme of the present invention, specify execution mode of the present invention at present:
The present invention includes following steps:
1) use alkaline-resisting container, with the aqueous slkali of pure water configuration low concentration, the concentration of regulation is a determined value between the 0.2%-1.9% weight ratio content;
The container that 2) will configure aqueous slkali is put in the middle of the ultrasonic cleaning device, with aqueous slkali heating and remain on a definite temperature between 20 ℃-90 ℃;
The crystal silicon chip that 3) will clean and polish immerses in this aqueous slkali;
4) aqueous slkali is applied ultrasonic wave, the vibration base molecule forms silicon chip surface and impacts, and on silicon chip surface, etches the black silicon of jungle structure or dense distribution cave form.
Here so-called aqueous slkali is meant NaOH (NaOH), potassium hydroxide (KOH), barium hydroxide (Ba (OH)
2), calcium hydroxide (Ca (OH)
2) or ammonia (NH
3) to wait the anion that ionization goes out in water all be the aqueous solution of the material of hydroxide ion.
The aqueous slkali of low concentration extensively is present in occurring in nature, and can be to environment and the ecological severe impairment that produces.Low concentration alkali solution used in the present invention can be eliminated its harm to environment fully through the method for simple dilution or acid-base integration.
More than, basic design of the present invention and basic principle have been set forth through introduction to listed execution mode.But the present invention never is limited to above-mentioned listed execution mode, and every equivalent variations, improvement and deliberately of inferior quality behavior of doing based on technical scheme of the present invention of change all should belong to protection scope of the present invention.
Claims (2)
1. method of using low concentration alkali solution to make black silicon material; It is characterized in that: the silicon chip that will clean and polish is immersed in the low concentration alkali solution of normal concentration; The range of choice of alkaline concentration is weight ratio content 0.2%-1.9%, simultaneously aqueous slkali is applied ultrasonic wave.
2. a kind of method of using low concentration alkali solution to make black silicon material according to claim 1 is characterized in that: when silicon chip is immersed in the aqueous slkali, keep the temperature-resistant of aqueous slkali, the range of choice of aqueous slkali temperature is 20 ℃-90 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100899530A CN102623562A (en) | 2012-03-30 | 2012-03-30 | Method for preparing black silicon material by using low-concentration alkali solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100899530A CN102623562A (en) | 2012-03-30 | 2012-03-30 | Method for preparing black silicon material by using low-concentration alkali solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102623562A true CN102623562A (en) | 2012-08-01 |
Family
ID=46563355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100899530A Pending CN102623562A (en) | 2012-03-30 | 2012-03-30 | Method for preparing black silicon material by using low-concentration alkali solution |
Country Status (1)
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|---|---|
| CN (1) | CN102623562A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022190A (en) * | 2014-06-23 | 2014-09-03 | 北京工业大学 | Method for preparing black silicon by using femtosecond laser in alkaline solution |
| CN104332526A (en) * | 2014-08-26 | 2015-02-04 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing black silicon |
| CN109638109A (en) * | 2018-12-11 | 2019-04-16 | 湖南红太阳光电科技有限公司 | A kind of preparation method of selective emitter, the preparation method of selective emitter battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020079290A1 (en) * | 1998-03-18 | 2002-06-27 | Konstantin Holdermann | Etching solution for wet chemical pyramidal texture etching of silicon surfaces |
| CN101540351A (en) * | 2009-04-14 | 2009-09-23 | 浙江大学 | Method for etching matte on surface of single crystal silicon solar energy battery |
| CN101661972A (en) * | 2009-09-28 | 2010-03-03 | 浙江大学 | Process for manufacturing monocrystalline silicon solar cell texture with low surface reflectivity |
-
2012
- 2012-03-30 CN CN2012100899530A patent/CN102623562A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020079290A1 (en) * | 1998-03-18 | 2002-06-27 | Konstantin Holdermann | Etching solution for wet chemical pyramidal texture etching of silicon surfaces |
| CN101540351A (en) * | 2009-04-14 | 2009-09-23 | 浙江大学 | Method for etching matte on surface of single crystal silicon solar energy battery |
| CN101661972A (en) * | 2009-09-28 | 2010-03-03 | 浙江大学 | Process for manufacturing monocrystalline silicon solar cell texture with low surface reflectivity |
Non-Patent Citations (1)
| Title |
|---|
| 张安元: "湿法刻蚀制备黑硅及性能研究", 《中国优秀硕士学位论文全文数据库信息科学辑》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022190A (en) * | 2014-06-23 | 2014-09-03 | 北京工业大学 | Method for preparing black silicon by using femtosecond laser in alkaline solution |
| CN104022190B (en) * | 2014-06-23 | 2017-02-01 | 北京工业大学 | Method for preparing black silicon by using femtosecond laser in alkaline solution |
| CN104332526A (en) * | 2014-08-26 | 2015-02-04 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing black silicon |
| CN109638109A (en) * | 2018-12-11 | 2019-04-16 | 湖南红太阳光电科技有限公司 | A kind of preparation method of selective emitter, the preparation method of selective emitter battery |
| CN109638109B (en) * | 2018-12-11 | 2020-07-10 | 湖南红太阳光电科技有限公司 | Preparation method of selective emitter and preparation method of selective emitter battery |
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Application publication date: 20120801 |