CN102623173B - Method for preparing alumina ordered nanopore structure-based capacitor - Google Patents
Method for preparing alumina ordered nanopore structure-based capacitor Download PDFInfo
- Publication number
- CN102623173B CN102623173B CN201210112199.8A CN201210112199A CN102623173B CN 102623173 B CN102623173 B CN 102623173B CN 201210112199 A CN201210112199 A CN 201210112199A CN 102623173 B CN102623173 B CN 102623173B
- Authority
- CN
- China
- Prior art keywords
- capacitor
- film
- nano
- metal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a method for preparing an alumina ordered nanopore structure-based capacitor. The method comprises the following steps of: performing surface plasma treatment on a porous alumina base material; preparing a metal nanofilm serving as an electrode of the capacitor by using an atomic layer deposition method; preparing a conductive polymer composite nanofilm serving as a transitional material between a dielectric material and another electrode by using a chemical electrostatic self-assembly method; and preparing a metal nanofilm serving as an electrode material by using the atomic layer deposition method, so that a metal-insulator-polymer semiconductor-metal capacitor structure is obtained in the porous alumina nanostructure. The capacitor prepared by the method has a nano layer structure, so that the capacitor has high energy density and is easily arrayed. Meanwhile, the capacitor preparing technology overcomes defects of the prior art; and the preparation method is reasonable, simple, and easy to implement.
Description
Technical field
The present invention relates to Electronic Material and Element field, be specifically related to the preparation method of the capacitor based on ordered porous alumina nano material.
Background technology
Capacitor, as the energy storage device being most widely used, has also been subject to stern challenge with the development of energy resource system demand.Traditional electrostatic condenser, its working mechanism is based on positive and negative electrode stored charge electric charge release fast, and therefore capacitor has higher power density.But owing to only having surface charge to be used for the electric charge of whole capacitor stores, therefore the energy density density of this capacitor is not high.In recent ten years, the development of ultracapacitor (being also electrochemical capacitor) is swift and violent, and electric chemical super capacitor is by electric double layer (or Faraday effect) stored charge, makes on electrode interface, to have larger energy density.But due to the migration (or oxidation-reduction process of electrode interface) of the need of work ion of capacitor, make the power density of electrochemical capacitor lower, compare traditional electrostatic condenser and yet have a certain distance.Therefore, the energy storage capacitor that exploitation has high power density and high-energy-density feature concurrently is the emphasis direction of energy-storage system development of future generation, is also the key technology that improves China's energy development level and energy utilization rate.
Along with social scientific and technological development is to demand efficient, clean energy resource, exploitation long circulation life, the energy storage device of high energy storage density is the focus that numerous areas researcher pays close attention to always.Energy storage device is as the parts that occupy maximum ratio weight and volume in energy resource system, and the raising of its energy storage density is significant, and the development of novel energy-storing device is being supported energy resource system to miniaturization, lightweight development.Compared with electrochemical capacitor, the current energy density of electrostatic condenser is lower, is that working mechanism has limited its energy density and further improves on the one hand, is due to the capacitor arrangement that lacks effective assembling means and be difficult to obtain height ratio capacity on the other hand.At present, high power density is the intrinsic advantage of electrostatic condenser, but lower energy density has limited development and the scope of application of conventional electrostatic capacitor greatly, the Gonna breakthrough electrostatic condenser scope of application also obtains better development, the energy density that must improve capacitor, meets various energy resource systems to the requirement of high-performance energy storage device by the raising of energy density.Therefore on the basis of intrinsic advantage, how by combining to improve the energy density of capacitor with new material and device architecture technology, be, conventional electrostatic capacitor development letter problem to be solved, simultaneously also for its development provides opportunity.
With the development of nanometer technology, current energy-storage system of future generation is more and more urgent to the demand of micro-/ nano yardstick energy storage device, the development of this inevitable requirement can provide for MEMS and nanoelectronic circuit nano cell or the capacitor of the energy, and current nanometer energy storage capacitor reaches far away requirement on size and energy storage density.Over nearly 10 years with the development of nanometer technology, various novel nano materials as: the electronic material of the novelties such as carbon nano-tube, Graphene is applied in high performance energy storage device, because this class nano material has larger specific area and high surface, interfacial activity, improved greatly the performance of energy storage capacitor (especially ultracapacitor) by the interfacial structure of ultrathin and the microminiaturization of device architecture, the use of these nano materials simultaneously also provides important technical support for constructing the energy storage capacitor of nanoscale.But the research that at present relevant nano structural material is applied to capacitor concentrates on electrochemical capacitor aspect mostly, and report aspect traditional electrostatic condenser is less.
Because nanostructure especially nano-porous structure has huge specific area, therefore a kind of effective method is in the open large-area ultra thin device structure of nanostructure Internal architecture.Therefore for the micro-/ nano of electrostatic condenser, adopting the device architecture of high-density film and interface system is main probing direction.Constructing nano electrostatic capacitor by the nanostructure of oldered array in recent years has been reported.First the people such as Shelimov have constructed the capacitor of metal-insulator-metal type (MIM) structure in AAO template, and the capacity of capacitor has reached 13 μ F/cm
2.The people such as Sohn also adopt porous alumina formwork to prepare a kind of MIM capacitor device array structure, and adopt the electrode material of carbon nano-tube as capacitor.The people such as domestic Liu Ling, by set up conductive polymer electrodes in AAO template, have obtained polypyrrole (PPy)/TiO
2/ PPy capacitor, utilizes the Quick Oxidation reduction process of conductive polymer nanometer structure to obtain the good capacitor of charge-discharge performance, can in nanometer micro-electro-mechanical systems is unified the chemical power source of nanoelectronic line system, have good application prospect.
Recently, the people ALD deposition technique such as Banerjee of University of Maryland is prepared super thin metal-insulator-metal capacitor and array structure in porous aluminum oxide nano structure.The array structure of this high-sequential has larger ratio capacitor, the specific capacity of the nano electrostatic capacitor of preparing in foraminous die plate of having reported before having substantially exceeded.The condenser capacity maximum of reporting has reached approximately 100 μ F/cm2, its power density (>1 × 106 W kg-1) has reached the level of electrostatic condenser, and energy density (0.7 Wh kg-1) approaches the level of electric chemical super capacitor, this array of capacitors structure has advantages of high energy density and power density simultaneously, can be used as the high energy storage capacitor that discharges density of having of a kind of novelty.But current this nanometer capacitor array can't store more energy because size is too little, how the interconnected some problems that also exists of multiple array structures simultaneously, guarantee that the exaggerated scale normal work of all capacitors simultaneously need further research.In addition, the contact resistance between electrode and dielectric layer is larger at present, has affected the equivalent series resistance (ESR) of capacitor, and the ESR value that how effectively to reduce capacitor is also such capacitor urgent problem.
In sum, by being combined with nano structural material, utilize this feature of bigger serface of nano material, and the superthin structure of preparing large area, array improves the energy storage density of capacitor, just can obtain the nano electrostatic capacitor of high-energy-density, make it have the feature of high power density and high-energy-density concurrently.At present, for the structure of capacitor and array structure thereof also in the starting stage, work also mostly for be the nano electrochemical capacitor of high-energy-density, and less for the report of traditional nano electrostatic capacitor, need deep, systematic research at aspects such as the stable assembling of nano electrostatic capacitor and energy storage mechanism.The manufacture that how to realize the each Stability Analysis of Structures assembling of capacitor, steady operation and large area array remains urgent problem.Therefore the research of the capacitor based on nano structural material and array technique has the meaning of particular importance to high energy storage density device and energy-storage system, is basic, the key exploration work to microelectronics nanometer energy resource system.By explore stable micro-/capacitor and array assemble method study it and electric property, can seek for stable structure, the steady operation of micro-/capacitor and array thereof a kind of method of suitable general property.
Summary of the invention
Problem to be solved by this invention is: the preparation method how a kind of capacitor is provided, the prepared capacitor based on nanostructure of the method has high energy density, preparation process has overcome existing defect in prior art, and preparation method is rationally simple, easy operating.
Technical problem proposed by the invention is to solve like this: a kind of preparation method of the capacitor based on aluminium oxide ordered nano pore structure, comprises the following steps:
1. Woelm Alumina matrix material is carried out to surface plasma processing;
2. adopt the method for ald on the Woelm Alumina matrix material through surface plasma processing, to prepare the electrode of metal nanometer thin film as capacitor;
3. adopt Atomic layer deposition method at metal nanometer thin film surface deposition dielectric nano thin-film the dielectric material as capacitor;
4. adopt chemical electrostatic self-assembled method to prepare conducting polymer composite nano film as dielectric material and another interelectrode transition material on dielectric nano thin-film surface;
5. on conducting polymer composite nano film surface, adopt Atomic layer deposition method to prepare metal nanometer thin film as electrode material, thereby in aluminum oxide porous nanostructure, obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.
Further, the metal nanometer thin film of step described in is 2. TiN or TaN nano thin-film.
Further, the dielectric nano thin-film of step described in is 3. Al
2o
3or HfO
2nano thin-film.
Further, the conducting polymer composite nano film of step described in is 4. polyaniline and kayexalate composite nano film.
Further, the metal nanometer thin film of step described in is 5. TaN nano thin-film.
Further, specifically comprise the following steps:
1. porous oxidation aluminum is put into vacuum equipment cavity, carry out surface plasma processing, the thickness of porous oxidation aluminum is 30～50 μ m, material intermediate pore size: length 20～30 μ m, diameter 60～80nm;
2. the porous oxidation aluminum of surface plasma processing is put into atomic layer deposition apparatus cavity, adopt the method for ald to prepare TiN metal nanometer thin film as electrode of capacitor;
3. the porous oxidation aluminum of having prepared metal electrode is put into atomic layer deposition apparatus cavity, adopt the method deposition HfO of ald
2dielectric nano thin-film is as capacitor dielectric material;
4. the porous oxidation aluminum of having prepared dielectric film is inserted in polyaniline/DMF solution to (mass ratio is 1:6) 15～20 minutes, drying at room temperature 15～20 minutes after taking out, obtains polyaniline nano film on dielectric thin-film material surface;
5. the porous oxidation aluminum 4. obtaining is inserted in the kayexalate aqueous solution to (mass ratio is 1:3) 10～15 minutes, the last taking out at 80～100 ℃ dry 15～20 minutes, obtain kayexalate nano thin-film on polyaniline film surface;
6. repeating step 4.～5. 8～10 time, thereby obtain polyaniline/polystyrene sodium sulfonate composite nano film as transition material on dielectric material surface;
7. adopt Atomic layer deposition method to prepare TiN nano thin-film as another electrode of capacitor on polyaniline/polystyrene sodium sulfonate composite nano film surface;
Thereby obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.
The preparation method of capacitor provided by the present invention compared with prior art tool has the following advantages:
The capacitor matrix material adopting is Woelm Alumina (AAO), wherein contain the nano-pore structure of big-length/diameter ratio of ordered arrangement, guarantee that electrode has large surface, each capacitor film part is nano thin-film structure simultaneously, has guaranteed the nanostructure of capacitor.This capacitor based on porous nanometer structure and nano thin-film structure can effectively improve the energy density of electrostatic condenser, and has the feature of quick release, can meet the many-sided different needs of high energy storage density energy-storage system.In addition, between medium layer of the present invention and electrode film, introduce polymer semiconductor's nano thin-film structure, can effectively reduce the contact resistance of electrode and dielectric material, reduced equivalent series resistance (ESR) value of capacitor.Preparation method is also rationally simple, easy operating.
Accompanying drawing explanation
Fig. 1 is single capacitor arrangement schematic diagram.
Wherein Reference numeral is respectively: 1, Woelm Alumina matrix material, 2, big-length/diameter compares nano-pore in order, 3, the metal electrode film that prepared by atomic deposition method, 4, the dielectric nano thin-film that prepared by atomic deposition method, 5, the composite nano-polymers film that prepared by chemical electrostatic self-assembled method, 6, the metal electrode film prepared of atomic deposition method.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
The invention provides a kind of preparation method of the capacitor based on aluminium oxide ordered nano pore structure, first prepare metal nanometer thin film as electrode by the method for ald in nano-pore inside, then adopt Atomic layer deposition method to prepare Nano dielectric film as capacitor dielectric layer on metal electrode film, then Tonghua electrostatic self-assembled method is prepared conducting polymer composite nano film on dielectric film, finally adopt Atomic layer deposition method to prepare metal nanometer thin film as another electrode at polymer nanocomposite film surface, thereby obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.The capacity of capacitor can regulate and control by the orderly number of perforations of difference, hole depth and hole dimension.Key in this invention is basis material for adopting the ordered nano porous structure of aluminium oxide, contains the nano-pore structure of big-length/diameter ratio in material, and the cavernous structure of this big-length/diameter ratio has guaranteed the specific area that capacitor is larger.Meanwhile, the electrode of capacitor and dielectric film adopt vacuum moulding machine and atomic deposition method, have guaranteed the nanostructure of film and device.In addition, this invention is introduced semiconducting polymer film as transition zone between Nano dielectric film and electrode film, effectively reduces the contact berrier of dielectric material and electrode, and then can reduce capacitor equivalent series resistance.Therefore, combine with device superthin structure by novel nano-pore, guaranteed that the capacitor obtaining has high-energy-density, little equivalent series resistance.Two electrodes of capacitor are TiN, the metal nanometer thin films such as TaN, and dielectric layer is Al
2o
3, HfO
2deng the dielectric nano thin-film that adopts atomic deposition method to obtain.In addition, by obtaining jumbo high energy density capacitor array structure by interconnected multiple Woelm Alumina capacitor substrates, be easy to realize array.
The invention provides a kind of preparation method of the capacitor based on aluminium oxide ordered nano pore structure, first prepare metal nanometer thin film as electrode by the method for ald in nano-pore inside, then adopt Atomic layer deposition method to prepare Nano dielectric film as capacitor dielectric layer on metal electrode film, then Tonghua electrostatic self-assembled method is prepared conducting polymer composite nano film on dielectric film, finally adopt Atomic layer deposition method to prepare metal nanometer thin film as another electrode at polymer nanocomposite film surface, thereby obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.The capacity of capacitor can regulate and control by the orderly number of perforations of difference, hole depth and hole dimension.
Rely on good oxidation aluminium ordered nano hole structural material and ripe atomic layer level thin film deposition process and chemical electrostatic self-assembled method, the present invention can prepare high energy density capacitor structure, and is easy to realize large area structure array.
Some capacitor arrangements that adopt the present invention to prepare are exemplified below:
1. based on Al
2o
3the poroid capacitor arrangement of Nano dielectric film;
2. based on HfO
2the poroid capacitor arrangement of Nano dielectric film;
Below specific embodiments of the invention:
In Fig. 1, porous oxidation aluminum is carried out to surface plasma processing, the Woelm Alumina material matrix material of surface plasma processing is inserted in atomic layer deposition apparatus cavity, and the method that adopts ald is prepared the electrode of the metal nanometer thin films such as TiN (in Fig. 1 3) as capacitor at alumina nanohole (in Fig. 1 2).
The porous oxidation aluminum that has deposited TiN electrode film is inserted in atomic layer level thin film depositing device cavity, adopt atomic deposition method in TiN film surface depositing Al
2o
3etc. dielectric nano thin-film (in Fig. 1 4).
Adopt chemical electrostatic self-assembled method to continue at dielectric nano thin-film surface deposition polyaniline (PAn)/kayexalate (PSS) composite nano-polymers film (in Fig. 1 5).
Adopt atomic deposition method at metal nanometer thin films such as composite nano-polymers film surface depositing TiNs as capacitor another one electrode, thereby in porous nanometer structure, obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.
Preparation method is as follows:
1. porous oxidation aluminum is put into vacuum cavity, carry out surface plasma processing, the thickness of porous oxidation aluminum is 50 μ m, material intermediate pore size: length 30 μ m, diameter 60nm;
2. the porous oxidation aluminum of surface plasma processing is put into atomic layer deposition apparatus cavity, adopt the method for atomic deposition to prepare TiN metal nanometer thin film as electrode of capacitor;
3. the porous oxidation aluminum of having prepared metal electrode is put into atomic layer deposition apparatus cavity, adopt the method depositing Al of ald
2o
3dielectric nano thin-film is as capacitor dielectric material;
4. the porous oxidation aluminum of having prepared dielectric film is inserted in polyaniline/DMF solution to (mass ratio is 1:6) 15 minutes, drying at room temperature 15 minutes after taking out, obtains polyaniline nano film on dielectric thin-film material surface;
5. the porous oxidation aluminum 4. obtaining is inserted in the kayexalate aqueous solution to (mass ratio is 1:3) 15 minutes, take out at latter 100 ℃ dry 20 minutes, obtain kayexalate nano thin-film on polyaniline film surface;
6. repeating step 4.-5. 8 time, thereby obtain polyaniline/polystyrene sodium sulfonate composite nano film as transition material on dielectric material surface;
7. adopt Atomic layer deposition method to prepare TiN nano thin-film as another electrode of capacitor on polyaniline/polystyrene sodium sulfonate composite nano film surface;
Thereby obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.
Thereby by 1.-7. obtain a kind of TiN-Al based on porous nanometer structure
2o
3-PAn/PSS-TiN capacitor arrangement.
As Fig. 1, capacitor dielectric nano thin-film is Al
2o
3.
The preparation flow of capacitor is similar to execution mode one.Thereby obtain a kind of TiN-Al based on porous nanometer structure
2o
3the high energy density capacitor structure of-PAn/PSS-TiN.
As Fig. 1, capacitor dielectric nano thin-film is HfO
2.
Two electrode materials of capacitor are respectively TaN metal nanometer thin film, and preparation flow is similar to execution mode one.Thereby obtain a kind of TaN-HfO based on porous nanometer structure
2the high energy density capacitor structure of-PAn/PSS-TaN.
As Fig. 1, capacitor dielectric nano thin-film is Al
2o
3.
Two electrode materials of capacitor are respectively TiN and TaN, and preparation flow is similar to execution mode one.Thereby obtain a kind of TiN-Al based on porous nanometer structure
2o
3the high energy density capacitor structure of-PAn/PSS-TaN.
As Fig. 1, capacitor dielectric nano thin-film is HfO
2.
Two electrode materials of capacitor are respectively TiN and TaN, and preparation flow is similar to execution mode one.Thereby obtain a kind of TiN-HfO based on porous nanometer structure
2the high energy density capacitor structure of-PAn/PSS-TaN.
embodiment 6
As Fig. 1, capacitor dielectric nano thin-film is HfO
2.
Two electrode materials of capacitor are TaN, and preparation flow is similar to execution mode one.Thereby obtain a kind of TaN-HfO based on porous nanometer structure
2the high energy density capacitor structure of-PAn/PSS-TaN.
Claims (1)
1. a preparation method for the capacitor based on aluminium oxide ordered nano pore structure, is characterized in that, specifically comprises the following steps:
1. porous oxidation aluminum is put into vacuum equipment cavity, carry out surface plasma processing, the thickness of porous oxidation aluminum is 30～50 μ m, material intermediate pore size: length 20～30 μ m, diameter 60～80nm;
2. the porous oxidation aluminum of surface plasma processing is put into atomic layer deposition apparatus cavity, adopt the method for ald to prepare TiN metal nanometer thin film as electrode of capacitor;
3. the porous oxidation aluminum of having prepared metal electrode is put into atomic layer deposition apparatus cavity, adopt the method deposition HfO of ald
2dielectric nano thin-film is as capacitor dielectric material;
4. the porous oxidation aluminum of having prepared dielectric film is inserted to the N of polyaniline, in dinethylformamide solution 15～20 minutes, polyaniline and DMF mass ratio were 1:6, drying at room temperature 15～20 minutes after taking out, obtains polyaniline nano film on dielectric thin-film material surface;
5. the porous oxidation aluminum 4. obtaining is inserted in the aqueous solution of kayexalate 10～15 minutes, the mass ratio of kayexalate and the aqueous solution is 1:3, after taking out, at 80～100 ℃, be dried 15～20 minutes, obtain kayexalate nano thin-film on polyaniline film surface;
6. repeating step 4.～5. 8～10 time, thereby obtain polyaniline and kayexalate composite nano film on dielectric material surface as transition material;
7. adopt Atomic layer deposition method to prepare TiN nano thin-film as another electrode of capacitor at polyaniline and kayexalate composite nano film surface;
Thereby obtain a kind of capacitor arrangement of metal-insulator-polymer semiconductor-metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210112199.8A CN102623173B (en) | 2012-04-17 | 2012-04-17 | Method for preparing alumina ordered nanopore structure-based capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210112199.8A CN102623173B (en) | 2012-04-17 | 2012-04-17 | Method for preparing alumina ordered nanopore structure-based capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102623173A CN102623173A (en) | 2012-08-01 |
| CN102623173B true CN102623173B (en) | 2014-05-28 |
Family
ID=46563031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210112199.8A Expired - Fee Related CN102623173B (en) | 2012-04-17 | 2012-04-17 | Method for preparing alumina ordered nanopore structure-based capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102623173B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466157A (en) * | 2002-06-28 | 2004-01-07 | ����ʿ�뵼������˾ | Method for forming MIM capacitor |
| CN101800253A (en) * | 2010-04-01 | 2010-08-11 | 复旦大学 | Nano capacitor for storing energy and preparation method thereof |
| CN101887807A (en) * | 2009-05-15 | 2010-11-17 | 株式会社村田制作所 | Solid electrolytic capacitor element and solid electrolytic capacitor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4986398B2 (en) * | 2002-07-01 | 2012-07-25 | アイゼンリンク、ロルフ | A new way to store electrical energy in so-called Quantum batteries |
| CN101051697B (en) * | 2007-04-10 | 2010-11-10 | 南京大学 | Variable resistance conductive polymer/polyelectrolyte solid composite or mixed film and its preparing method |
| WO2009091384A1 (en) * | 2008-01-18 | 2009-07-23 | Chameleon Scientific Corporation | Nanofilm protective and release matrices |
| US8088667B2 (en) * | 2008-11-05 | 2012-01-03 | Teledyne Scientific & Imaging, Llc | Method of fabricating vertical capacitors in through-substrate vias |
| CN101718742B (en) * | 2009-11-20 | 2013-04-17 | 上海师范大学 | Method for detecting atrazine |
| CN101923963A (en) * | 2010-08-20 | 2010-12-22 | 电子科技大学 | Solid tantalum electrolytic capacitor and preparation method thereof |
-
2012
- 2012-04-17 CN CN201210112199.8A patent/CN102623173B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466157A (en) * | 2002-06-28 | 2004-01-07 | ����ʿ�뵼������˾ | Method for forming MIM capacitor |
| CN101887807A (en) * | 2009-05-15 | 2010-11-17 | 株式会社村田制作所 | Solid electrolytic capacitor element and solid electrolytic capacitor |
| CN101800253A (en) * | 2010-04-01 | 2010-08-11 | 复旦大学 | Nano capacitor for storing energy and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102623173A (en) | 2012-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhao et al. | Recent advances in designing and fabricating self‐supported nanoelectrodes for supercapacitors | |
| Yu et al. | Ultrahigh-rate wire-shaped supercapacitor based on graphene fiber | |
| TWI747892B (en) | Devices and methods for high voltage and solar applications | |
| Xiong et al. | Three-dimensional ultrathin Ni (OH) 2 nanosheets grown on nickel foam for high-performance supercapacitors | |
| Hu et al. | Recent advances in designing and fabrication of planar micro-supercapacitors for on-chip energy storage | |
| Zhang et al. | Synthesis of porous Co3O4 nanoflake array and its temperature behavior as pseudo-capacitor electrode | |
| Xu et al. | One-step synthesis of copper compounds on copper foil and their supercapacitive performance | |
| Liu et al. | Novel and high-performance asymmetric micro-supercapacitors based on graphene quantum dots and polyaniline nanofibers | |
| Qin et al. | Free-standing porous carbon nanofiber/ultrathin graphite hybrid for flexible solid-state supercapacitors | |
| Pan et al. | Facile synthesis of Co3O4 nanosheets electrode with ultrahigh specific capacitance for electrochemical supercapacitors | |
| Guo et al. | Nanoarrays: design, preparation and supercapacitor applications | |
| Liu et al. | A NiAl layered double hydroxide@ carbon nanoparticles hybrid electrode for high-performance asymmetric supercapacitors | |
| KR101031019B1 (en) | Method for manufacturing metal electrode having transition metallic coating layer and metal electrode manufactured thereby | |
| KR101089860B1 (en) | Super capacitor and method of fabricating the same | |
| CN104637694A (en) | Micro super capacitor nano-device based on porous graphene-supported polyaniline heterostructure and manufacturing method thereof | |
| Lee et al. | Self-organized cobalt fluoride nanochannel layers used as a pseudocapacitor material | |
| Ghosh et al. | Hydrothermal synthesis of platelet β Co (OH) 2 and Co3O4: Smart electrode material for energy storage application | |
| Fang et al. | One-step synthesis of Ni/Ni (OH) 2@ multiwalled carbon nanotube coaxial nanocable film for high performance supercapacitors | |
| CN104952630A (en) | Mini-sized supercapacitor with high flexibility and high transparency and large-scale preparation method of mini-sized supercapacitor | |
| CN103337381A (en) | Method for fabricating flexible electrode | |
| CN103714978A (en) | Electrode plate, preparation method thereof and super capacitor | |
| CN102623174B (en) | Method for preparing high energy density capacitor | |
| Kamble et al. | Binder-free synthesis of high-quality nanocrystalline ZnCo 2 O 4 thin film electrodes for supercapacitor application | |
| Wang et al. | TiN nanosheet arrays on Ti foils for high-performance supercapacitance | |
| Li et al. | Olive Leaves‐Derived Hierarchical Porous Carbon as Cathode Material for Anti‐Self‐Discharge Zinc‐Ion Hybrid Capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140528 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |