CN102618848A - Vertical-type atomic layer deposition device - Google Patents

Vertical-type atomic layer deposition device Download PDF

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Publication number
CN102618848A
CN102618848A CN2012101360787A CN201210136078A CN102618848A CN 102618848 A CN102618848 A CN 102618848A CN 2012101360787 A CN2012101360787 A CN 2012101360787A CN 201210136078 A CN201210136078 A CN 201210136078A CN 102618848 A CN102618848 A CN 102618848A
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CN
China
Prior art keywords
silicon chip
main chamber
guiding
feeding mechanism
decorated basket
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012101360787A
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Chinese (zh)
Inventor
刘传钦
屈芙蓉
李超波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIAXING KEMIN ELECTRONIC EQUIPMENT TECHNOLOGY Co Ltd
Original Assignee
JIAXING KEMIN ELECTRONIC EQUIPMENT TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by JIAXING KEMIN ELECTRONIC EQUIPMENT TECHNOLOGY Co Ltd filed Critical JIAXING KEMIN ELECTRONIC EQUIPMENT TECHNOLOGY Co Ltd
Priority to CN2012101360787A priority Critical patent/CN102618848A/en
Publication of CN102618848A publication Critical patent/CN102618848A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a vertical-type atomic layer deposition device, which belongs to the technical field of an atomic layer deposition device. The device comprises a main chamber and a wafer feeding mechanism, wherein the wafer feeding mechanism is arranged outside the main chamber, and the wafer feeding mechanism feeds a silicon wafer from outside of the main chamber to the inside of the main chamber. Due to the adoption of the device, quality of the finished product wafer can be prevented from being influenced by broken metal which is produced by the abrasion of a lead rail of the wafer feeding mechanism.

Description

A kind of vertical atomic layer deposition apparatus
Technical field
The present invention relates to the atomic layer deposition apparatus technical field, particularly a kind of vertical atomic layer deposition apparatus.
Background technology
At present, a subject matter facing of photovoltaic industry is economy and the technical feasibility that when increasing efficiency of conversion, guarantees suitability for industrialized production.Through atomic layer deposition apparatus the crystal silicon solar energy battery silicon chip is carried out the method that surface passivation has been proved to be a kind of effective raising efficiency of conversion.Existing atomic layer deposition apparatus all adopts horizontal scheme, and its shortcoming is following:
1) in the existing atomic layer deposition apparatus, feeding mechanism is arranged in the main chamber usually, and this atomic layer deposition apparatus because the broken end of metal that the way rub of feeding mechanism remains in the chamber can the pollution cavity environment, influences into tablet quality behind life-time service;
2) the lateral operation space of whole process of production needs is bigger.
Summary of the invention
In order to address the above problem; The present invention proposes a kind of feeding mechanism and be arranged at outside the main chamber, thereby avoid because the way rub of feeding mechanism produces the broken end of metal and the one-tenth tablet quality is impacted, and; Make full use of vertical space, thus the little vertical atomic layer deposition apparatus of floor space.
Vertical atomic layer deposition apparatus provided by the invention comprises main chamber and feeding mechanism, and said feeding mechanism is arranged at the outside of said main chamber, and said feeding mechanism is sent to said main chamber inside with silicon chip from said main chamber outside.
As preferably, the relative position relation of said feeding mechanism and said main chamber is vertical.
As preferably, said feeding mechanism is arranged on the said main chamber.
As preferably, said feeding mechanism comprises motor and guiding mechanism, and silicon chip places on the said guiding mechanism, and under the effect of said motor, said guiding mechanism promotes silicon chip, and be sent to said main chamber from said main chamber outside inner.
As preferably; Said guiding mechanism comprises line slideway, guiding polished rod and silicon chip fixed mechanism; Said line slideway and said motor electrically connect, and an end of said silicon chip fixed mechanism is sheathed on the said line slideway, and the other end of said silicon chip fixed mechanism is sheathed on the said guiding polished rod; Under the effect of said motor; Said silicon chip fixed mechanism can move to said main chamber under the guiding of said line slideway and said guiding polished rod, thereby, make silicon chip be sent to said main chamber inside from said main chamber outside.
As preferably; Said silicon chip fixed mechanism comprises gaily decorated basket frame anchor, gaily decorated basket Connection Block, the anti-skidding mechanism of silicon chip and film releasing frame, and said film releasing frame is fixedly connected on the said gaily decorated basket anchor through web plate, and said gaily decorated basket anchor is fixedly connected on said gaily decorated basket Connection Block; One end of said gaily decorated basket Connection Block is sheathed on the said line slideway; The other end of said gaily decorated basket Connection Block is sheathed on the said guiding polished rod, and an end of the anti-skidding mechanism of said silicon chip is fixedly connected on the said web plate, and the other end of the anti-skidding mechanism of said silicon chip extend in the said main chamber; The silicon chip center is arranged in the anti-skidding mechanism of said silicon chip, and silicon chip edge is resisted against said film releasing frame inwall.
As preferably, said anti-skidding mechanism is a safety tread.
The feeding mechanism of vertical atomic layer deposition apparatus provided by the invention is arranged at outside the said main chamber, thereby has avoided because the way rub of feeding mechanism produces the broken end of metal becoming tablet quality to impact.
Description of drawings
The one-piece construction synoptic diagram of the vertical atomic layer deposition apparatus that Fig. 1 provides for the embodiment of the invention.
Embodiment
In order to understand the present invention in depth, the present invention is elaborated below in conjunction with accompanying drawing and specific embodiment.
Referring to accompanying drawing 1, vertical atomic layer deposition apparatus provided by the invention comprises main chamber 1 and feeding mechanism, and feeding mechanism is arranged at the outside of main chamber 1, and feeding mechanism is sent to main chamber 1 inside with silicon chip 2 from main chamber 1 outside.
Wherein, be arranged at a kind of concrete implementation of the outside of main chamber 1 as feeding mechanism, the relative position relation of feeding mechanism and main chamber 1 can be vertical, and making full use of vertical space, thereby floor space is little.
Wherein, as the vertical a kind of concrete implementation of the relative position relation of feeding mechanism and main chamber 1, feeding mechanism is arranged on the main chamber 1.
Wherein, as a kind of concrete implementation of feeding mechanism, feeding mechanism comprises motor 3 and guiding mechanism, and silicon chip 2 places on the guiding mechanism, and under the effect of motor 3, guiding mechanism promotes silicon chip 2 and is sent to main chamber 1 inside from main chamber 1 outside.
Wherein, As a kind of concrete implementation of guiding mechanism, guiding mechanism comprises line slideway 4, guiding polished rod 5 and silicon chip fixed mechanism, and line slideway 4 electrically connects with motor 3; One end of silicon chip fixed mechanism is sheathed on the line slideway 4; The other end of silicon chip fixed mechanism is sheathed on the guiding polished rod 5, and under the effect of motor 3, the silicon chip fixed mechanism can be to main chamber's 1 motion under the guiding of line slideway 4 and guiding polished rod 5; Thereby, make silicon chip 2 be sent to main chamber 1 inside from main chamber 1 outside.
Wherein, as a kind of concrete implementation of silicon chip fixed mechanism, the silicon chip fixed mechanism comprises gaily decorated basket frame anchor 6, gaily decorated basket Connection Block 7, the anti-skidding mechanism of silicon chip and film releasing frame 8; Film releasing frame 8 is fixedly connected on the gaily decorated basket anchor 6 through web plate 10; Gaily decorated basket anchor 6 is fixedly connected on gaily decorated basket Connection Block 7, and an end of gaily decorated basket Connection Block 7 is sheathed on the line slideway 4, and the other end of gaily decorated basket Connection Block 7 is sheathed on the guiding polished rod 5; One end of the anti-skidding mechanism of silicon chip is fixedly connected on the web plate 10; The other end of the anti-skidding mechanism of silicon chip extend in the main chamber 1, and silicon chip 2 centers are arranged in the anti-skidding mechanism of silicon chip, and silicon chip 2 edges are resisted against film releasing frame 8 inwalls.
Wherein, as a kind of concrete implementation of anti-skidding mechanism, anti-skidding mechanism is a safety tread 9.
The feeding mechanism of vertical atomic layer deposition apparatus provided by the invention is arranged at outside the said main chamber 1, thereby has avoided because the way rub of feeding mechanism produces the broken end of metal becoming tablet quality to impact.
Above-described embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1. a vertical atomic layer deposition apparatus comprises main chamber and feeding mechanism, it is characterized in that, said feeding mechanism is arranged at the outside of said main chamber, and said feeding mechanism is sent to said main chamber inside with silicon chip from said main chamber outside.
2. equipment according to claim 1 is characterized in that the relative position relation of said feeding mechanism and said main chamber is vertical.
3. equipment according to claim 2 is characterized in that said feeding mechanism is arranged on the said main chamber.
4. according to arbitrary described equipment in the claim 1~3; It is characterized in that said feeding mechanism comprises motor and guiding mechanism, silicon chip places on the said guiding mechanism; Under the effect of said motor, said guiding mechanism promotes silicon chip and is sent to said main chamber inside from said main chamber outside.
5. equipment according to claim 4; It is characterized in that said guiding mechanism comprises line slideway, guiding polished rod and silicon chip fixed mechanism, said line slideway and said motor electrically connect; One end of said silicon chip fixed mechanism is sheathed on the said line slideway; The other end of said silicon chip fixed mechanism is sheathed on the said guiding polished rod, and under the effect of said motor, said silicon chip fixed mechanism can be to the motion of said main chamber under the guiding of said line slideway and said guiding polished rod; Thereby, make silicon chip be sent to said main chamber inside from said main chamber outside.
6. equipment according to claim 5; It is characterized in that; Said silicon chip fixed mechanism comprises gaily decorated basket frame anchor, gaily decorated basket Connection Block, the anti-skidding mechanism of silicon chip and film releasing frame, and said film releasing frame is fixedly connected on the said gaily decorated basket anchor through web plate, and said gaily decorated basket anchor is fixedly connected on said gaily decorated basket Connection Block; One end of said gaily decorated basket Connection Block is sheathed on the said line slideway; The other end of said gaily decorated basket Connection Block is sheathed on the said guiding polished rod, and an end of the anti-skidding mechanism of said silicon chip is fixedly connected on the said web plate, and the other end of the anti-skidding mechanism of said silicon chip extend in the said main chamber; The silicon chip center is arranged in the anti-skidding mechanism of said silicon chip, and silicon chip edge is resisted against said film releasing frame inwall.
7. equipment according to claim 6 is characterized in that, said anti-skidding mechanism is a safety tread.
CN2012101360787A 2012-05-04 2012-05-04 Vertical-type atomic layer deposition device Pending CN102618848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012101360787A CN102618848A (en) 2012-05-04 2012-05-04 Vertical-type atomic layer deposition device

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Application Number Priority Date Filing Date Title
CN2012101360787A CN102618848A (en) 2012-05-04 2012-05-04 Vertical-type atomic layer deposition device

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CN102618848A true CN102618848A (en) 2012-08-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465447A (en) * 2013-09-17 2015-03-25 北京北方微电子基地设备工艺研究中心有限责任公司 Carrying platform elevating gear, reaction cavity, and plasma processing device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040065258A1 (en) * 2002-10-08 2004-04-08 Sandhu Gurtej S. Atomic layer deposition methods and atomic layer deposition tools
CN101343726A (en) * 2007-07-09 2009-01-14 殷志强 Solar energy thermal-collecting tube continuous automatic sputtering film coating method and device
CN101850473A (en) * 2010-05-06 2010-10-06 长春吉扬华欣科技有限责任公司 Laser processing equipment of connecting rod initial cracking groove of engine
CN102112655A (en) * 2008-08-01 2011-06-29 皮考逊公司 Atomic layer deposition apparatus and loading methods
CN102299049A (en) * 2011-07-30 2011-12-28 太原风华信息装备股份有限公司 Petal-basket floating silicon chip automation separation mechanism
CN102358449A (en) * 2011-06-21 2012-02-22 中国电子科技集团公司第二研究所 Full-automatic silicon wafer loader

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040065258A1 (en) * 2002-10-08 2004-04-08 Sandhu Gurtej S. Atomic layer deposition methods and atomic layer deposition tools
CN101343726A (en) * 2007-07-09 2009-01-14 殷志强 Solar energy thermal-collecting tube continuous automatic sputtering film coating method and device
CN102112655A (en) * 2008-08-01 2011-06-29 皮考逊公司 Atomic layer deposition apparatus and loading methods
CN101850473A (en) * 2010-05-06 2010-10-06 长春吉扬华欣科技有限责任公司 Laser processing equipment of connecting rod initial cracking groove of engine
CN102358449A (en) * 2011-06-21 2012-02-22 中国电子科技集团公司第二研究所 Full-automatic silicon wafer loader
CN102299049A (en) * 2011-07-30 2011-12-28 太原风华信息装备股份有限公司 Petal-basket floating silicon chip automation separation mechanism

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465447A (en) * 2013-09-17 2015-03-25 北京北方微电子基地设备工艺研究中心有限责任公司 Carrying platform elevating gear, reaction cavity, and plasma processing device
CN104465447B (en) * 2013-09-17 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 Microscope carrier lowering or hoisting gear, reaction chamber and plasma processing device

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Application publication date: 20120801