CN102615436A - Process monitoring method for femtosecond laser etching process of thin-film solar cell - Google Patents
Process monitoring method for femtosecond laser etching process of thin-film solar cell Download PDFInfo
- Publication number
- CN102615436A CN102615436A CN2012101007992A CN201210100799A CN102615436A CN 102615436 A CN102615436 A CN 102615436A CN 2012101007992 A CN2012101007992 A CN 2012101007992A CN 201210100799 A CN201210100799 A CN 201210100799A CN 102615436 A CN102615436 A CN 102615436A
- Authority
- CN
- China
- Prior art keywords
- thin
- film solar
- etching process
- femtosecond laser
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a process monitoring method for a femtosecond laser etching process of a thin-film solar cell. Data acquisition and processing signal feedback control are realized on line at PPt-grade precision in a non-contact way through the cooperation work of an LIBS (Laser-Induced Breakdown Spectroscopy) module and a laser transmitter which are integrated highly. The process monitoring method has the advantages that: aiming at the specificity and the characteristic of femtosecond laser, a special etching process monitoring method is adopted for monitoring so that the consistency of an etching process and preset parameters and the etching effect are ensured, the width of a notch groove for etching the thin-film solar cell can be up to 3mum, and the depth of the notch groove for etching the thin-film solar cell can be precisely controlled to be up to 100nm.
Description
Technical field
The present invention relates to a kind of investigating method, particularly a kind of thin-film solar cells femtosecond laser etching process investigating method.
Background technology
Femtosecond laser is a kind of laser with the impulse form running, and the duration is very short, has only several femtoseconds; One femtosecond is exactly negative 15 power seconds of 10, just 1/1,000,000,000,000,000 seconds, its Billy with electronics method obtained short pulse to lack several thousand times; Femtosecond laser have a very high instantaneous power; Can reach hundred TW terawatts, it can focus on the area of space also littler than the diameter of hair, makes the active force taller several times of the strength ratio atomic nucleus of electromagnetic field to electronics around it.In view of the outstanding feature of femtosecond laser, it has obtained extensive use in fields such as physics, biology, chemical controlled reaction, optical communication, retrofit.
In recent years, the development of the solar cell industry of China is exceedingly fast, and the solar electrical energy generation amount is with the speed increase in every year 30%, the improvement that develops inevitable requirement associated production apparatus upgrading and technology rapidly of solar energy industry.Since the particularity of femtosecond laser with and characteristics, in etching process, it is followed the tracks of observing and controlling process, compatibility of goals etc., have certain degree of difficulty, being still needs the difficult problem that breaks through.
Summary of the invention
Goal of the invention: to the problems referred to above; The purpose of this invention is to provide a kind of thin-film solar cells femtosecond laser etching process investigating method; Etching process is carried out observing and controlling, particularly the uniformity of etching process and parameter preset is carried out observing and controlling, to guarantee etching effect.
Technical scheme: a kind of thin-film solar cells femtosecond laser etching process investigating method, through highly integrated LIBS module and generating laser collaborative work,, noncontact online at the PPt class precision realizes data acquisition, processing signals FEEDBACK CONTROL.
Qualitative, the quantitative analysis of element to the laser plasma breakdown spectral is analysed and compared through spectrum on line, improves the accuracy of observing and controlling.
Beneficial effect: compared with prior art; Advantage of the present invention be to the particularity of femtosecond laser with and characteristics; Etching process investigating method through special carries out observing and controlling, to guarantee the uniformity of etching process and parameter preset, guarantees etching effect; The cutting width of thin-film solar cells etching can reach 3 microns, and the precision control of the degree of depth can reach 100 nanometers.
The specific embodiment
Below in conjunction with specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
A kind of thin-film solar cells femtosecond laser etching process investigating method, through highly integrated LIBS module and generating laser collaborative work,, noncontact online at the PPt class precision realizes data acquisition, processing signals FEEDBACK CONTROL.Online monitoring method is qualitative to the element of laser plasma breakdown spectral, quantitative analysis.
Laser plasma breakdown spectral technology is an important instrument in the analysis of element qualitative and quantitative, has washability, destructiveness is little, resolution ratio is high and can carries out real-time analysis to solid-state, liquid, gaseous state and aerosol material.Use the LIBS technology to realize real-time monitoring film surface micro fining-off process, thereby realize the detection and the control of laser ultraprecise processing film.The optimal control system, highly integrated LIBS module and laser instrument are realized collaborative work; System experimentation research plasma generation, expansion and cancellation process, LIBS observing and controlling parameter is optimized in research, and, noncontact online at the PPt class precision realizes data acquisition, handles signal feedback control well.The cutting width of thin-film solar cells etching is reached 3 microns by present 40 microns, and the precision control of the degree of depth can reach 100 nanometers.
Claims (2)
1. thin-film solar cells femtosecond laser etching process investigating method is characterized in that: through highly integrated LIBS module and generating laser collaborative work,, noncontact online at the PPt class precision realizes data acquisition, processing signals FEEDBACK CONTROL.
2. thin-film solar cells femtosecond laser etching process investigating method according to claim 1 is characterized in that: qualitative, the quantitative analysis of the element to the laser plasma breakdown spectral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101007992A CN102615436A (en) | 2012-04-09 | 2012-04-09 | Process monitoring method for femtosecond laser etching process of thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101007992A CN102615436A (en) | 2012-04-09 | 2012-04-09 | Process monitoring method for femtosecond laser etching process of thin-film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102615436A true CN102615436A (en) | 2012-08-01 |
Family
ID=46555828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101007992A Pending CN102615436A (en) | 2012-04-09 | 2012-04-09 | Process monitoring method for femtosecond laser etching process of thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102615436A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111250870A (en) * | 2020-01-15 | 2020-06-09 | 武汉理工大学 | Real-time monitoring method for fs laser processing non-single-layer material |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003059563A2 (en) * | 2002-01-18 | 2003-07-24 | Carl Zeiss Meditec Ag | Femtosescond laser system for the exact manipulation of material and tissues |
| US20060207975A1 (en) * | 2001-03-29 | 2006-09-21 | Gsi Lumonics Corporation | High-speed, precision, laser-based method and system for processing material of one or more targets within a field |
| CN101589173A (en) * | 2007-02-07 | 2009-11-25 | Imra美国公司 | A method for depositing crystalline titania nanoparticles and films |
| CN201490214U (en) * | 2009-08-13 | 2010-05-26 | 普乐新能源（蚌埠）有限公司 | Vision-based l laser scribing device for thin-film solar cell |
| CN101866836A (en) * | 2010-05-28 | 2010-10-20 | 常州大学 | Preparation method of nanometer silicon quantum dots and application thereof in film solar batteries |
| CN101696936B (en) * | 2009-10-22 | 2011-07-20 | 浙江师范大学 | Laser induced discharge reinforcement plasma spectrum detection device |
| CN102359953A (en) * | 2011-09-21 | 2012-02-22 | 冶金自动化研究设计院 | Ordinary brass full-elemental analysis apparatus based on laser-induced breakdown spectroscopy, and method thereof |
-
2012
- 2012-04-09 CN CN2012101007992A patent/CN102615436A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060207975A1 (en) * | 2001-03-29 | 2006-09-21 | Gsi Lumonics Corporation | High-speed, precision, laser-based method and system for processing material of one or more targets within a field |
| WO2003059563A2 (en) * | 2002-01-18 | 2003-07-24 | Carl Zeiss Meditec Ag | Femtosescond laser system for the exact manipulation of material and tissues |
| CN101589173A (en) * | 2007-02-07 | 2009-11-25 | Imra美国公司 | A method for depositing crystalline titania nanoparticles and films |
| CN201490214U (en) * | 2009-08-13 | 2010-05-26 | 普乐新能源（蚌埠）有限公司 | Vision-based l laser scribing device for thin-film solar cell |
| CN101696936B (en) * | 2009-10-22 | 2011-07-20 | 浙江师范大学 | Laser induced discharge reinforcement plasma spectrum detection device |
| CN101866836A (en) * | 2010-05-28 | 2010-10-20 | 常州大学 | Preparation method of nanometer silicon quantum dots and application thereof in film solar batteries |
| CN102359953A (en) * | 2011-09-21 | 2012-02-22 | 冶金自动化研究设计院 | Ordinary brass full-elemental analysis apparatus based on laser-induced breakdown spectroscopy, and method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111250870A (en) * | 2020-01-15 | 2020-06-09 | 武汉理工大学 | Real-time monitoring method for fs laser processing non-single-layer material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Recent advances in laser-induced breakdown spectroscopy quantification: From fundamental understanding to data processing | |
| CN101696936B (en) | Laser induced discharge reinforcement plasma spectrum detection device | |
| Li et al. | Analytical-performance improvement of laser-induced breakdown spectroscopy for steel using multi-spectral-line calibration with an artificial neural network | |
| EP3505912B1 (en) | Method for detecting composition of steel sample by using multi-pulse laser-induced plasma spectrometer | |
| CN102507512A (en) | On-line in situ detecting method for infrared-ultraviolet double pulse laser induced breakdown spectroscopy | |
| CN203732444U (en) | Laser-induced breakdown spectroscopy analyzer | |
| CN105241864A (en) | Laser-induce self-assembly method for preparing high-sensitivity optical fiber SERS probe | |
| CN103712606B (en) | A kind of sea ice monitoring system and method for work thereof | |
| CN104625417A (en) | Method for controlling topography of nickel surface through femtosecond laser based on electronic dynamic control | |
| Hartzler et al. | Evaluating laser-induced breakdown spectroscopy sensor technology for rapid source characterization of rare earth elements | |
| CN106198491A (en) | The apparatus and method of the breakdown point distance of improving laser induction air breakdown | |
| CN104111249A (en) | Highly-sensitive rapid detection device for elements in liquid | |
| CN203772742U (en) | Laser-induced magnetic confinement enhanced plasma spectrum detection device | |
| Seel et al. | The VESUVIO spectrometer now and when? | |
| CN102615436A (en) | Process monitoring method for femtosecond laser etching process of thin-film solar cell | |
| CN203887388U (en) | Laser marking machine | |
| CN102615433A (en) | Femtosecond laser etching process of thin-film solar cell | |
| CN103868604A (en) | Femtosecond laser pulse width measuring device based on molecule ionization detection | |
| Jia-Ming et al. | Detection of trace elements in active luminescent glass using laser-induced breakdown spectroscopy combined with laser-induced fluorescence | |
| CN203824653U (en) | Femtosecond laser pulse width measuring instrument based on molecular ionization detection | |
| CN203705342U (en) | Alternating magnetic field intensifying laser inducing plasma light spectrum detection device | |
| CN109632707A (en) | Concentration detection method based on fibre-optical F-P sensor | |
| CN203949874U (en) | Element high-sensitivity rapid detection device in a kind of liquid | |
| Sheta et al. | Insights into enhanced repeatability of femtosecond laser-induced plasmas | |
| Chen et al. | Study on the mechanism of laser paint removal based on emission spectrum and composition analysis |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120801 |