CN102610759A - Conjugated thin polymer film solar cell and method for producing same - Google Patents

Conjugated thin polymer film solar cell and method for producing same Download PDF

Info

Publication number
CN102610759A
CN102610759A CN2012100910760A CN201210091076A CN102610759A CN 102610759 A CN102610759 A CN 102610759A CN 2012100910760 A CN2012100910760 A CN 2012100910760A CN 201210091076 A CN201210091076 A CN 201210091076A CN 102610759 A CN102610759 A CN 102610759A
Authority
CN
China
Prior art keywords
solar cell
conjugated polymer
resilient coating
thin films
aluminium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100910760A
Other languages
Chinese (zh)
Inventor
谢志元
刘剑
吴江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Institute of Applied Chemistry of CAS
Original Assignee
Changchun Institute of Applied Chemistry of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changchun Institute of Applied Chemistry of CAS filed Critical Changchun Institute of Applied Chemistry of CAS
Priority to CN2012100910760A priority Critical patent/CN102610759A/en
Publication of CN102610759A publication Critical patent/CN102610759A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention provides a conjugated polymer thin-film solar cell and a method for producing the same, which belong to the technical field of solar cells, and solve the problem of the low energy conversion efficiency of the inversed conjugated thin polymer film solar cell. The solar cell comprises a substrate, a cathode layer, a cathode boundary buffer layer, a photosensitive layer which is formed by a mixture of conjugated polymer and fullerene derivative, an anode boundary buffer layer and an anode layer, which are sequentially connected with one another, wherein the cathode boundary buffer layer is a molybdenum trioxide-aluminum composite. Through controlling the mass fraction of aluminum in the MoO3-Al boundary layer, compared with a device which uses the MoO3 as the cathode boundary buffer layer, the open-circuit voltage of the device which uses the co-evaporated MoO3-Al as the cathode boundary buffer layer is increased from 0.07 volt to 0.89 volt by 11.71 times; and the energy conversion efficiency is increased from 0.15% to 6.28% by 40.87 times.

Description

A kind of conjugated polymer thin films solar cell and preparation method thereof
Technical field
The invention belongs to technical field of solar batteries, be specifically related to a kind of conjugated polymer thin films solar cell and preparation method thereof.
Background technology
Utilize conjugated polymer to have advantages such as low, flexible good, light weight of cost and solution processable as the polymer thin-film solar cell of electron acceptor, become this hot research fields in recent years as electron donor, fullerene derivate.Nineteen ninety-five, the bulk heterojunction solar cell of the inierpeneirating network structure that people such as G.Yu propose to be made up of conjugated polymer and Fu Le ene derivative for the first time is because exciton dissociation efficient height receives extensive concern.In in the past 10 years, people make the energy conversion efficiency of conjugated polymer thin films solar cell be greatly improved through improving polymer donor material molecular structure, control active layer pattern and introducing the novel interfacial layer material.Yet traditional stability of just putting solar battery structure is lower; Its key constraints has: gather (3 as anode buffer layer; 4-epidioxy ethylthiophene): poly styrene sulfonate (PEDOT:PSS) has acidity, corrosion indium tin oxide (ITO) anode; It is oxidized easily to have lower work function as the calcium (Ca) of cathode buffer layer or barium (Be).The inverted structure solar cell is owing to avoid the use of the stability that PEDOT:PSS anode buffer layer and Ca or Be cathode buffer layer can effectively improve solar cell.Use zinc oxide as cathode interface layer (Appl.Phys.Lett.89 at present in the world mostly; 143517; 2006) structure is inverted the conjugated polymer thin films solar cell; Yet the work function of zinc oxide cathode interface layer material can not occupy track (LUMO) energy level coupling with the minimum electronics of electron acceptor, produces bigger electronics and exports potential barrier, makes short-circuit current density (J SC) and open circuit voltage (V OC) loss, cause less energy conversion efficiency.
Summary of the invention
In order to solve the low problem of inversion conjugated polymer thin films solar cell energy conversion efficiency of prior art, the invention provides a kind of conjugated polymer thin films solar cell and preparation method thereof.
A kind of conjugated polymer thin films solar cell; Comprise photosensitive layer, anodic interface resilient coating and the anode layer of the blend formation of the derivative composition of substrate, cathode layer, cathode interface resilient coating, conjugated polymer and the fullerene of connection successively, described cathode interface resilient coating is the compound of molybdenum trioxide-aluminium.
The mass percent of aluminium is 25%-83% in the compound of described molybdenum trioxide-aluminium, is preferably 50%-71%, most preferably is 55%.
Described conjugated polymer for gather [nitrogen-(1-octyl group nonyl)-2,7-carbazole-alternately-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 ', 3 '-diazosulfide)], the derivative of fullerene is [6,6]-phenyl C71 methyl butyrate; Described gathering [nitrogen-(1-octyl group nonyl)-2,7-carbazole-replace-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 ', 3 '-diazosulfide)] (PCDTBT) with [6,6]-phenyl C71 methyl butyrate (PC 70BM) mass ratio is 1: 0.5-1: 8, be preferably 1: 4.
Described substrate is glass or flexible substrate, and described cathode layer is indium tin oxide (ITO), and described anodic interface resilient coating is MoO 3, described anode layer is metallic aluminium or silver.
A kind of preparation method of conjugated polymer thin films solar cell comprises the steps:
(1) on substrate, forms cathode layer;
(2) compound of vapor deposition molybdenum trioxide-aluminium on above-mentioned cathode layer forms the cathode interface resilient coating;
(3) on above-mentioned cathode interface resilient coating, coat the blend that the derivative of conjugated polymer and fullerene is formed, form photosensitive layer;
(4) vapor deposition anodic interface resilient coating and anode layer successively on above-mentioned photosensitive layer obtain the conjugated polymer thin films solar cell.
Described cathode interface resilient coating is the compound of molybdenum trioxide-aluminium, and wherein the mass percent of aluminium is 25%-83%.
The thickness of described cathode interface resilient coating molybdenum trioxide-aluminium is the 3-50 nanometer, is preferably 10 nanometers.
Beneficial effect: a kind of conjugated polymer thin films solar cell of the present invention is through introduce molybdenum trioxide-aluminium (MoO of vapor deposition altogether at indium tin oxide (ITO) cathode surface 3-Al) as the cathode interface resilient coating, through control MoO 3The mass fraction of aluminium in the-Al boundary layer (in the 25%-83% scope) can effectively be regulated cathode interface resilient coating work function; Make this cathode interface resilient coating and electron acceptor work function mate; Form ohmic contact; Reduce electronics output potential barrier, and then improved short circuit current, open circuit voltage, fill factor, curve factor and the energy conversion efficiency of battery.Experimental result shows: with using MoO 3Make the device of cathode interface resilient coating and compare, use the MoO of vapor deposition altogether 3The device open circuit voltage that-Al does the cathode interface resilient coating is increased to 0.89 volt by 0.07 volt, has improved 11.71 times; Short circuit current increases to 10.7 milliamperes/square centimeter by 6.48 milliamperes/square centimeter, has improved 0.65 times; Fill factor, curve factor increases to 0.66 by 0.25, has improved 1.64 times; Energy conversion efficiency increases to 6.28% by 0.15%, has improved 40.87 times; Use aluminium oxide (Al simultaneously 2O 3) device of making the cathode interface resilient coating compares, and uses the MoO of vapor deposition altogether 3The device open circuit voltage that-Al does the cathode interface resilient coating is increased to 0.89 volt by 0.61 volt, has improved 0.46 times; Fill factor, curve factor is increased to 0.66 by 0.5, has improved 0.32 times; Energy conversion efficiency increases to 6.28% by 3.24%, has improved 0.94 times.
Description of drawings
Fig. 1 conjugated polymer thin films solar battery structure of the present invention sketch map;
Among the figure: 1, substrate, 2, cathode layer, 3, the cathode interface resilient coating, 4, photosensitive layer, 5, the anodic interface resilient coating, 6, anode layer.
Fig. 2 is that embodiment of the invention 1-6 and Comparative Examples 1-2 are the current-voltage characteristic curve figure that tests under the AM1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity,
Wherein, curve 1 is that Comparative Examples 1 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 2 is that Comparative Examples 2 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 3 is that embodiment 1 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 4 is that embodiment 2 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 5 is that embodiment 3 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 6 is that embodiment 4 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 7 is that embodiment 5 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity;
Curve 8 is that embodiment 6 is the current-voltage characteristic curve figure that tests under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity.
Embodiment
The present invention discloses a kind of conjugated polymer thin films solar cell; Shown in accompanying drawing 1, comprise photosensitive layer 4, anodic interface resilient coating 5 and the anode layer 6 of the blend formation of the derivative of substrate 1, cathode layer 2, cathode interface resilient coating 3, conjugated polymer and the fullerene of connection successively.
Described cathode interface resilient coating 3 is the compound of molybdenum trioxide-aluminium, and the preparation process of this compound is: (Sigma-Aldrich company buys, and purity is 99.5% with a spot of molybdenum trioxide powder;) in the tantalum boat of packing into, be fixed on the evaporation source in the vacuum evaporation platform, shut corresponding lower baffle plate; (Beijing Chinese incense cedar woods non-ferrous metal technology development center buys with metal aluminum filament; Purity is 99.9999%) be cut into segment and put into tungsten filament, be fixed on another evaporation source, shut corresponding lower baffle plate; Take out and steam sky, treat that vacuum degree reaches 1.0 * 10 -4Behind the handkerchief; The beginning vapor deposition, the evaporation rate of using quartz crystal oscillator film thickness monitoring appearance to regulate molybdenum trioxide and aluminium wire respectively, the evaporation rate of molybdenum trioxide is controlled at 0.1nm/s; The evaporation rate of aluminium is controlled at 0.025nm/s-0.5nm/s, obtains the compound of molybdenum trioxide-aluminium.The mass percent of molybdenum trioxide and aluminium is in 100%, and wherein the mass percent of aluminium is 25%-83%, is preferably 50%-71%, most preferably is 55%.
Described conjugated polymer for gather [nitrogen-(1-octyl group nonyl)-2,7-carbazole-alternately-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 ', 3 '-diazosulfide)], the derivative of fullerene is [6,6]-phenyl C71 methyl butyrate; Described gathering [nitrogen-(1-octyl group nonyl)-2,7-carbazole-replace-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 ', 3 '-diazosulfide)] (PCDTBT) with [6,6]-phenyl C71 methyl butyrate (PC 70BM) mass ratio is 1: 0.5-8 is preferably 1: 4.
Described substrate 1 is glass or flexible substrate, and described cathode layer 2 is indium tin oxide (ITO), and described anodic interface resilient coating 5 is MoO 3, described anode layer 6 is metallic aluminium or silver.
The thickness of described ITO cathode layer is the 40-800 nanometer, is preferably 120 nanometers; Cathode interface resilient coating MoO 3-Al thickness is the 3-50 nanometer, is preferably 10 nanometers; The thickness of photosensitive layer is the 50-200 nanometer, is preferably 70 nanometers; Anodic interface resilient coating MoO 3Thickness be the 1-60 nanometer, be preferably 6 nanometers, the thickness of anode A l or Ag is the 70-200 nanometer, is preferably 80 nanometers.
The present invention also provides a kind of preparation method of conjugated polymer thin films solar cell, comprises the steps:
(1) on substrate, forms cathode layer;
(2) compound of vapor deposition molybdenum trioxide-aluminium on above-mentioned cathode layer forms the cathode interface resilient coating;
(3) on above-mentioned cathode interface resilient coating, coat the blend that the derivative of conjugated polymer and fullerene is formed, form photosensitive layer;
(4) vapor deposition anodic interface resilient coating and anode layer successively on above-mentioned photosensitive layer obtain the conjugated polymer thin films solar cell.
Described substrate is glass or flexible substrate; Described cathode layer is indium tin oxide (ITO), and the cathode interface resilient coating is the compound of molybdenum trioxide-aluminium, and the mass percent of aluminium is 25%-83% in the compound of molybdenum trioxide-aluminium; Be preferably 50%-71%, most preferably be 55%.Described photosensitive layer is the blend that the derivative of conjugated polymer and fullerene is formed, and described conjugated polymer is for gathering [nitrogen-(1-octyl group nonyl)-2,7-carbazole-replace-5; 5-(4 ', 7 '-two-2-thienyl-2 ', 1 '; 3 '-diazosulfide)]; The derivative of fullerene is [6,6]-phenyl C71 methyl butyrate, and described anodic interface resilient coating is MoO 3, described anode layer is metallic aluminium or silver.
Describedly in the preparation method who forms cathode layer on the substrate be: on substrate, the ITO cathode layer being etched into width is 4 millimeters fine strip shape; The ito glass of the good fine strip shape of etching is cleaned up; Put into baking oven 120 ℃ of oven dry down; The thickness of described ITO cathode layer is the 40-800 nanometer, is preferably 120 nanometers.
The preparation method of vapor deposition cathode interface resilient coating is on above-mentioned cathode layer: above-mentioned cathode layer is put into vacuum coating equipment vacuumize, when vacuum degree reaches 4 * 10 -4During Pascal, be total to vapor deposition cathode interface resilient coating MoO 3-Al, described cathode interface resilient coating MoO 3-Al thickness is the 3-50 nanometer, is preferably 10 nanometers.
On above-mentioned cathode interface resilient coating, coat the blend of the derivative composition of conjugated polymer and fullerene, the preparation method who forms photosensitive layer is: with the above-mentioned cathode interface resilient coating MoO that has common vapor deposition 3The substrate-transfer of-Al is placed on the carriage of film applicator to glove box, [the nitrogen-(1-octyl group nonyl)-2 that gathers that stirs; 7-carbazole-replace-5; 5-(4 ', 7 '-two-2-thienyl-2 ', 1 '; 3 '-diazosulfide)] mixed solution formed with [6,6]-phenyl C71 methyl butyrate is evenly coated in cathode interface resilient coating MoO through 0.45 micron filtering head 3Above-the Al, the rotating speed spin-coating with 400 rev/mins-1000 rev/mins is preferably 600 rev/mins, obtains photosensitive layer, and the thickness of described photosensitive layer is the 50-200 nanometer, is preferably 70 nanometers.
Described gathering [nitrogen-(1-octyl group nonyl)-2,7-carbazole-replace-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 ', 3 '-diazosulfide)] preparation method of the mixed solution formed with [6,6]-phenyl C71 methyl butyrate is: in inert-atmosphere glove box, will gather [nitrogen-(1-octyl group nonyl)-2; 7-carbazole-replace-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 ', 3 '-diazosulfide)] (PCDTBT) with [6,6]-phenyl C71 methyl butyrate (PC 70BM) be dissolved in the o-dichlorohenzene solvent, in 10 ℃ of-80 ℃ of temperature ranges, magnetic agitation 3-48 hour, obtain mixed solution.Described gathering [nitrogen-(1-octyl group nonyl)-2,7-carbazole-alternately-5,5-(4 ', 7 '-two-2-thienyl-2 ', 1 ', 3 '-diazosulfide)] (PCDTBT) with [6,6]-phenyl C71 methyl butyrate (PC 70BM) mass ratio is 1: 0.5-1: 8, be preferably 1: 4, and the concentration of described PCDTBT is 4 mg/ml, PC 70The concentration of BM is the 2-32 mg/ml, is preferably 16 mg/ml;
The preparation method of vapor deposition anodic interface resilient coating and anode layer is successively on above-mentioned photosensitive layer: the substrate that will scribble photosensitive layer takes out in glove box with shifting bottle, puts into vacuum coating equipment and vacuumizes, when vacuum degree reaches 4 * 10 -4During Pascal, vapor deposition anodic interface resilient coating MoO 3, vapor deposition anode aluminium or silver obtain the conjugated polymer thin films solar cell then, described anodic interface resilient coating MoO 3Thickness be the 1-60 nanometer, be preferably 6 nanometers, the thickness of anode A l or Ag is the 70-200 nanometer, is preferably 80 nanometers.
Embodiment 1
In inert-atmosphere glove box, with 4 milligrams gather [nitrogen-(1-octyl group nonyl)-2,7-carbazole-alternately-5,5-(4 ', 7 '-two-2-thienyl-2 ', 1 ', 3 '-diazosulfide)] (PCDTBT) with [6,6]-phenyl C71 methyl butyrate (PC of 16 milligrams 70BM) to be dissolved in 1 milliliter the o-dichlorohenzene, under 40 ℃ of conditions, magnetic agitation 12 hours obtains mixed solution, and the concentration of described PCDTBT is 4 mg/ml; PC 70BM concentration is 16 mg/ml.
On glass substrate, be that to be etched into width be 4 millimeters fine strip shape for the indium tin oxide anode layer of 120 nanometers with thickness; The ito glass of the good fine strip shape of etching is cleaned up, put into baking oven, 120 ℃ of oven dry; Again above-mentioned cathode layer is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10 -4During Pascal, vapor deposition 10 nanometer cathode interface resilient coating MoO 3-Al, wherein the mass percent of Al is 25%, with the above-mentioned MoO that has 3The substrate-transfer of-Al cathode interface resilient coating is placed on the carriage of film applicator, the PCDTBT/PC that stirs to glove box 70The BM mixed solution is evenly coated in cathode interface resilient coating MoO through 0.45 micron filtering head 3Above-the Al, with 600 rpms rotating speed spin-coating, obtaining thickness is the substrate of the photosensitive layer 4 of 70 nanometers; The substrate that scribbles photosensitive layer is taken out in glove box with shifting bottle, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10 -4During Pascal, the anodic interface resilient coating MoO of vapor deposition 6 nanometer thickness 3, the anode A l of vapor deposition 80 nanometer thickness transfers in the glove box having steamed Al electrode device afterwards then, and encapsulation is got up, and obtaining processing structure is ITO (120nm)/MoO 3-Al (25%, 10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 23.
Embodiment 2
The device architecture of conjugated polymer thin films solar cell and preparation method are with embodiment 1, and different is at cathode interface resilient coating MoO 3Among-the Al, the mass percent of Al is 33%, and processing structure is ITO (120nm)/MoO 3-Al (33%, 10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 24.
Embodiment 3
The device architecture of conjugated polymer thin films solar cell and preparation method are with embodiment 1, and different is at cathode interface resilient coating MoO 3Among-the Al, the mass percent of Al is 40%, and processing structure is ITO (120nm)/MoO 3-Al (40%, 10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 25.
Embodiment 4
The device architecture of conjugated polymer thin films solar cell and preparation method are with embodiment 1, and different is at cathode interface resilient coating MoO 3Among-the Al, the mass percent of Al is 55%, and processing structure is ITO (120nm)/MoO 3-Al (55%, 10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 26.
Embodiment 5
The device architecture of conjugated polymer thin films solar cell and preparation method are with embodiment 1, and different is at cathode interface resilient coating MoO 3Among-the Al, the mass percent of Al is 78%, and processing structure is ITO (120nm)/MoO 3-Al (78%, 10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 27.
Embodiment 6
The device architecture of conjugated polymer thin films solar cell and preparation method are with embodiment 1, and different is at cathode interface resilient coating MoO 3Among-the Al, the mass percent of Al is 83%, and processing structure is ITO (120nm)/MoO 3-Al (83%, 10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 28.
Comparative Examples 1
On glass substrate, be that to be etched into width be 4 millimeters fine strip shape for the indium tin oxide anode layer of 120 nanometers with thickness; The ito glass of the good fine strip shape of etching is cleaned up, put into baking oven, 120 ℃ of oven dry; Again above-mentioned cathode layer is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10 -4During Pascal, vapor deposition 10 nanometer cathode interface resilient coating MoO 3, with the above-mentioned MoO that has 3The substrate-transfer of cathode interface resilient coating is placed on the carriage of film applicator, the PCDTBT/PC that stirs to glove box 70The BM mixed solution is evenly coated in cathode interface resilient coating MoO through 0.45 micron filtering head 3Above, with 600 rpms rotating speed spin-coating, obtaining thickness is the substrate of the photosensitive layer 4 of 70 nanometers; The substrate that scribbles photosensitive layer is taken out in glove box with shifting bottle, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10 -4During Pascal, the anodic interface resilient coating MoO of vapor deposition 6 nanometer thickness 3, the anode A l of vapor deposition 80 nanometer thickness transfers in the glove box having steamed Al electrode device afterwards then, and encapsulation is got up, and obtaining processing structure is ITO (120nm)/MoO 3(10nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The effective area of this battery is 12 square millimeters.The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 21.
Comparative Examples 2
The device architecture of conjugated polymer thin films solar cell and preparation method be with Comparative Examples 1, and different is receives cathode interface resilient coating rice Al at IT cathode surface vapor deposition 0.75 2O 3, processing structure is ITO (120nm)/Al 2O 3(0.75nm)/PCDTBT:PC 70BM (70nm)/MoO 3(6nm)/the conjugated polymer thin films solar cell of Al (80nm).The conjugated polymer thin films solar cell of present embodiment preparation is that performance parameter is as shown in table 1 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, and the current-voltage characteristic curve figure that tests with this understanding is shown in curve among Fig. 22.
Table 1 is to be the device performance parameter comparison of Comparative Examples 1,2 and embodiment 1,2,3,4,5,6 under the AM 1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity, comprising: open circuit voltage, short circuit current, fill factor, curve factor and energy conversion efficiency.From table 1, can find out: open circuit voltage is along with MoO 3The Al mass percent increases and increases in-the Al cathode interface resilient coating; Open circuit voltage is 0.89 volt to the maximum when the Al mass percent is 55%; Open circuit voltage variations is little when the Al mass percent is between 55-83%; Short circuit current, fill factor, curve factor and energy conversion efficiency all increase and increase along with the Al mass percent, and short circuit current is 10.7 milliamperes/square centimeter to the maximum when the Al mass percent is 55%, and fill factor, curve factor is 0.66 to the maximum; Energy conversion efficiency is 6.28%, and short circuit current, fill factor, curve factor and energy conversion efficiency all reduce when the Al mass percent continues to increase.Compare with Comparative Examples 1, the open circuit voltage of embodiment 4 has improved 11.71 times; Short circuit current has improved 0.65 times; Fill factor, curve factor has improved 1.64 times; Energy conversion efficiency has improved 40.87 times; Compare with Comparative Examples 2, the open circuit voltage of embodiment 4 has improved 0.46 times; Fill factor, curve factor has improved 0.32 times; Energy conversion efficiency has improved 0.94 times.
Table 1
Figure BDA0000148907550000091
Figure BDA0000148907550000101
Fig. 2 is that embodiment of the invention 1-6 and Comparative Examples 1-2 are the current-voltage characteristic curve figure that tests under the AM1.5G simulated solar irradiation of 100 milliwatt/square centimeters in intensity.As can beappreciated from fig. 2, along with MoO 3The percentage composition of aluminium is increased to 55% (embodiment 1 to 4) from 25% in the-Al compound, and the open circuit voltage of conjugated polymer solar cell increases gradually, after 55%, remains on 0.88V basically; The percentage composition of aluminium is increased to 83% (embodiment 4 to 6) from 55%; The short circuit current of conjugated polymer solar cell reduces gradually; Cause the reduction of battery performance, when the percentage composition of aluminium was 55% (embodiment 4), the energy conversion efficiency of battery reached maximum.

Claims (10)

1. conjugated polymer thin films solar cell; Comprise photosensitive layer (4), anodic interface resilient coating (5) and the anode layer (6) of the blend formation of the derivative composition of substrate (1), cathode layer (2), cathode interface resilient coating (3), conjugated polymer and the fullerene of connection successively; It is characterized in that; Described cathode interface resilient coating (3) is the compound of molybdenum trioxide-aluminium, and the mass percent of aluminium is 25%-83% in the compound.
2. a kind of conjugated polymer thin films solar cell according to claim 1 is characterized in that the mass percent of aluminium is 50%-71% in the described compound.
3. a kind of conjugated polymer thin films solar cell according to claim 2 is characterized in that the mass percent of aluminium is 55% in the described compound.
4. a kind of conjugated polymer thin films solar cell according to claim 1 is characterized in that, described conjugated polymer is for gathering [nitrogen-(1-octyl group nonyl)-2; 7-carbazole-replace-5,5-(4 ', 7 '-two-2-thienyl-2 '; 1 '; 3 '-diazosulfide)], the derivative of fullerene is [6,6]-phenyl C71 methyl butyrate.
5. a kind of conjugated polymer thin films solar cell according to claim 1 is characterized in that, gathers [nitrogen-(1-octyl group nonyl)-2 in the described blend; 7-carbazole-replace-5; 5-(4 ', 7 '-two-2-thienyl-2 ', 1 '; 3 '-diazosulfide)] and the mass ratio of [6,6]-phenyl C71 methyl butyrate be 1: 0.5-8.
6. a kind of conjugated polymer thin films solar cell according to claim 5 is characterized in that, gathers [nitrogen-(1-octyl group nonyl)-2 in the described blend; 7-carbazole-replace-5; 5-(4 ', 7 '-two-2-thienyl-2 ', 1 '; 3 '-diazosulfide)] and the mass ratio of [6,6]-phenyl C71 methyl butyrate be 1: 4.
7. according to any described a kind of conjugated polymer thin films solar cell of claim 1-6, it is characterized in that described substrate is glass or flexible substrate, described cathode layer is an indium tin oxide, and described anodic interface resilient coating is MoO 3, described anode layer is metallic aluminium or silver.
8. the preparation method of a conjugated polymer thin films solar cell is characterized in that, comprises the steps:
(1) on substrate, forms cathode layer;
(2) compound of vapor deposition molybdenum trioxide-aluminium on above-mentioned cathode layer forms the cathode interface resilient coating;
(3) on above-mentioned cathode interface resilient coating, coat the blend that the derivative of conjugated polymer and fullerene is formed, form photosensitive layer;
(4) vapor deposition anodic interface resilient coating and anode layer successively on above-mentioned photosensitive layer obtain the conjugated polymer thin films solar cell.
Described cathode interface resilient coating is the compound of molybdenum trioxide-aluminium, and the mass percent of aluminium is 25%-83% in the compound.
9. the preparation method of a kind of conjugated polymer thin films solar cell according to claim 8 is characterized in that, the thickness of described cathode interface resilient coating molybdenum trioxide-aluminium is 3 nanometers-50 nanometers.
10. the preparation method of a kind of conjugated polymer thin films solar cell according to claim 9 is characterized in that, the thickness of described cathode interface resilient coating molybdenum trioxide-aluminium is 10 nanometers.
CN2012100910760A 2012-03-30 2012-03-30 Conjugated thin polymer film solar cell and method for producing same Pending CN102610759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012100910760A CN102610759A (en) 2012-03-30 2012-03-30 Conjugated thin polymer film solar cell and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012100910760A CN102610759A (en) 2012-03-30 2012-03-30 Conjugated thin polymer film solar cell and method for producing same

Publications (1)

Publication Number Publication Date
CN102610759A true CN102610759A (en) 2012-07-25

Family

ID=46528007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012100910760A Pending CN102610759A (en) 2012-03-30 2012-03-30 Conjugated thin polymer film solar cell and method for producing same

Country Status (1)

Country Link
CN (1) CN102610759A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253217A (en) * 2013-06-27 2014-12-31 海洋王照明科技股份有限公司 Solar cell device and method for manufacturing same
CN110120454A (en) * 2019-05-10 2019-08-13 电子科技大学 Application, solar battery and the preparation method of organic acid and/or alcohol in preparation solar cell interface adjusting control agent

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307259A (en) * 1998-04-23 1999-11-05 Tdk Corp Organic el element
CN101800291A (en) * 2009-06-19 2010-08-11 深圳大学 Organic electroluminescence device and drive method thereof
CN102024906A (en) * 2010-09-30 2011-04-20 中国科学院半导体研究所 Organic solar cell structure based on oxide doped organic material
CN102177599A (en) * 2008-09-26 2011-09-07 密歇根大学董事会 Organic tandem solar cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307259A (en) * 1998-04-23 1999-11-05 Tdk Corp Organic el element
CN102177599A (en) * 2008-09-26 2011-09-07 密歇根大学董事会 Organic tandem solar cells
CN101800291A (en) * 2009-06-19 2010-08-11 深圳大学 Organic electroluminescence device and drive method thereof
CN102024906A (en) * 2010-09-30 2011-04-20 中国科学院半导体研究所 Organic solar cell structure based on oxide doped organic material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253217A (en) * 2013-06-27 2014-12-31 海洋王照明科技股份有限公司 Solar cell device and method for manufacturing same
CN110120454A (en) * 2019-05-10 2019-08-13 电子科技大学 Application, solar battery and the preparation method of organic acid and/or alcohol in preparation solar cell interface adjusting control agent

Similar Documents

Publication Publication Date Title
CN108767118B (en) A kind of ternary all-polymer solar battery
CN105047825A (en) Organic/inorganic perovskite battery and preparation method thereof
CN109904330B (en) Based on passivation material Me4Method for preparing tin-lead hybrid perovskite solar cell by NBr
CN111883659B (en) Efficient ternary organic solar cell prepared based on gradual deposition method
CN102983277A (en) Inverted polymer solar cell of Ag nano particle compounded cavity transmission layer and fabrication method
CN104733614B (en) Organic thin film solar cell based on two-layer hybrid active layer and preparation method thereof
CN109873081B (en) Organic photovoltaic cell based on organic/inorganic gradient diffusion interface layer and preparation method thereof
CN107359243A (en) A kind of tertiary blending organic polymer solar cell device
CN103296209A (en) Solar cell combining heterostructure plasmons and bulk heterojunctions
CN113193117A (en) Perovskite solar cell based on p-methoxyphenylacetic acid passivator
CN111081883B (en) Efficient and stable planar heterojunction perovskite solar cell and preparation method
CN107369769B (en) A kind of organic solar batteries and preparation method thereof based on spraying molybdenum trioxide anode buffer array
Lee et al. Investigation of PCBM/ZnO and C60/BCP-based electron transport layer for high-performance pin perovskite solar cells
Xie et al. Plasmon-enhanced perovskite solar cells using ultra-thin LiF spacer isolating AgAl and Au composite nanoparticles from metal electrode
CN108832001B (en) Lead-free perovskite solar cell device and preparation method thereof
CN101494255B (en) Preparation method for thin-film solar cell based on narrowband gap conjugated polymer
US20150263285A1 (en) Polymer solar cell and preparation method thereof
CN111223993B (en) Semitransparent perovskite solar cell with high open-circuit voltage
CN113097388A (en) Perovskite battery based on composite electron transport layer and preparation method thereof
CN105932160B (en) A kind of organic photovoltaic elements and preparation method thereof
CN105206746A (en) Organic thin-film solar cell based on ternary solvent system and preparing method thereof
CN102610759A (en) Conjugated thin polymer film solar cell and method for producing same
CN106848066A (en) A kind of method for improving organic solar device photoelectric conversion efficiency and photo and thermal stability
CN103280528A (en) Polymer solar cell
CN116782675A (en) Perovskite solar cell and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20120725