CN102610723B - Method for manufacturing deformed indium-gallium-aluminum-nitrogen-based semiconductor light emitting device - Google Patents
Method for manufacturing deformed indium-gallium-aluminum-nitrogen-based semiconductor light emitting device Download PDFInfo
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- CN102610723B CN102610723B CN201110026135.1A CN201110026135A CN102610723B CN 102610723 B CN102610723 B CN 102610723B CN 201110026135 A CN201110026135 A CN 201110026135A CN 102610723 B CN102610723 B CN 102610723B
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Abstract
The invention discloses a method for manufacturing a deformed indium-gallium-aluminum-nitrogen-based semiconductor light emitting device, and relates to an indium-gallium-aluminum-nitrogen-based semiconductor light emitting device. According to the invention, the photoelectric performance and the reliability of the device can be improved by the improvement of electron distribution. The deformed indium-gallium-aluminum-nitrogen-based semiconductor light emitting device provided by the invention comprises a support substrate and a multi-layer semiconductor structure on the support substrate, wherein the multi-layer semiconductor structure is of an arc-shaped curve surface. The method provided by the invention comprises the steps of manufacturing an ultraviolet curing adhesive layer on an indium-gallium-aluminum-nitrogen thin film; manufacturing an ultraviolet support substrate on the ultraviolet curing adhesive layer; and using the ultraviolet to irradiate so as to cure the ultraviolet curing adhesive, curing and contracting the ultraviolet curing adhesive so as to enable the indium-gallium-aluminum-nitrogen thin film to be bent-shaped. According to the invention, the effective contact area between an ohmic contact layer and a lighting layer is increased, so that the lighting efficiency is improved. The photoelectric performance and the reliability of the device are improved.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, more particularly to indium-gallium-aluminum-nitrogen based semiconductor light emitting device
Part.
Background technology
The InGaAlN luminescent device of commercialization at present, its structure is as shown in figure 1, the semiconductor multilayer structure on substrate is equal
For smooth.This construction profile is attractive in appearance, is easy to make electrode and the artificial operation in routing, and production process and control automatically
System.But because electrode is centrally located, when electric current flows through chip, electronics distribution is simultaneously uneven.Electronics skewness
It is a major reason for causing device light emitting efficiency low.
The content of the invention
First technical problem to be solved by this invention be：A kind of indium-gallium-aluminum-nitrogen based semiconductor light emitting device of deformation is provided
Part, it passes through to improve electronics distribution is improved the photoelectric properties and reliability of device.
Second technical problem to be solved by this invention be：A kind of indium-gallium-aluminum-nitrogen base for manufacturing above-mentioned deformation is provided
The method of light emitting semiconductor device, the method is improved the photoelectric properties and reliability of device by improving electronics distribution.
3rd technical problem to be solved by this invention be：Another kind of indium-gallium-aluminum-nitrogen for manufacturing above-mentioned deformation is provided
The method of based semiconductor light-emitting device, the method is put forward the photoelectric properties and reliability of device by improving electronics distribution
It is high.
In order to solve first technical problem of the present invention, the present invention proposes that a kind of indium-gallium-aluminum-nitrogen base semiconductor of deformation is sent out
Multilayer semiconductor structure on optical device, including support substrate, and support substrate, the curved song of the multilayer semiconductor structure
Face.
Preferably：The multilayer semiconductor structure is in the ogive or reclinate depressed body being bent upwards.
Preferably：The device is vertical stratification, and the support substrate is silicon substrate, carbon-based substrate, alloy substrate, GaAs
Or silicon carbide substrates；Or the device is horizontal structure, substrate is alumina substrate, ceramic substrate or glass substrate.
Preferably：The multilayer semiconductor structure include passivation antireflection layer, Ohmic contact reflector layer or ohmic contact layer with
The complementary structure of electrode.
Preferably：It includes electrode, and electrode is located at the curved surface vertex position top of device.
In order to solve second technical problem of the present invention, the present invention proposes a kind of indium gallium aluminum for manufacturing Aforesaid deformation
The method of nitride-base semiconductor luminescent device, it includes：
Ultra-violet curing glue-line is made on InGaAlN thin film；
Ultraviolet light supporting substrate is made on ultra-violet curing glue-line；
With ultraviolet light, ultra-violet curing adhesive curing is made, it is curved that uv-curable glue cure shrinkage is presented InGaAlN thin film
Curved shape.
In order to solve the 3rd technical problem of the present invention, the present invention proposes a kind of indium gallium for manufacturing aforesaid deformation
The method of aluminum nitride-base semiconductor luminescent device, it includes：
The transition zone of low melting point, thermal coefficient of expansion more than or less than InGaAlN thin film is made on InGaAlN thin film,
Transfer base substrate is made on the transition zone, barrier layer is provided between transition zone and transfer base substrate；
High-temperature is risen, when the transition zone is in softening or molten state, then lowering the temperature solidifies transition zone, to indium-gallium-aluminum-nitrogen
Thin film forms curved surface.
Preferably：The transition zone is metal.
Preferably：The metal is one or more combination in indium, gallium or stannum.
Preferably：The transition zone is Colophonium or one kind or combinations thereof in wax.
Beneficial effects of the present invention：
Compared to existing technology, luminescent device proposed by the present invention, the multilayer semiconductor structure on its substrate is presented curved surface knot
Structure.Such structure, the contact surface of its ohmic contact layer and luminescent layer is curved surface, referred to as curved face contact, compares existing skill
The plane contact of art, the contact area of this contact is increased.Because electronics distribution has cambered surface spreading effect (i.e. for powered
Contour body, due to the effect of repelling each other of identical charges, electrons are evenly distributed in the surface of contour body), bigger contact area
The electronics from electrode can be made to be distributed on the face that ohmic contact layer is contacted with luminescent layer more uniform, make to flow through luminescent layer
Electronics also relative distribution.Increase the effective contact area of ohmic contact layer and luminescent layer so that luminous efficiency is improved.From
And it is improved the photoelectric properties and reliability of device.
Description of the drawings
Fig. 1 is a kind of structure of prior art.
Fig. 2 is the chip structure of embodiments of the invention one.
Fig. 3 is the chip structure of embodiments of the invention two.
Fig. 4 is just to have carried out growth substrates stripping, completed the chip structure figure of substrate transfer.
Specific embodiment
The present invention provides a kind of indium-gallium-aluminum-nitrogen based semiconductor light-emitting device and manufacture method of deformation.
The luminescent device includes the multilayer semiconductor structure in support substrate, and support substrate, the multilayer semiconductor
The curved curved surface of structure.The arc-shaped curved surface of the multilayer semiconductor structure is included in the ogive or reclinate recessed being bent upwards
Sunken body.All substrates that can be used that support substrate can be related to for prior art, including silicon substrate or silicon carbide substrates.
Fig. 2 be the multilayer semiconductor structure on the supporting substrate of shown device be one protrusion curved body, indium-gallium-aluminum-nitrogen
Thin film 2201 is the curved body of a projection.In figure 2201 are the InGaAlN thin film that have passed through roughening treatment, and 2202 is device
Part upper surface is passivated antireflection layer, and 2203 is passivated metal layer and diffusion impervious layer at device lower surface and complementation electrode, and 2204 are
Pressure welding metal level, 2205 is Ohmic contact reflector layer, and 2206 is supporting substrate, and 2207 is supporting substrate metal layer on back, 2208
For N-shaped ohmic contact metal layer and metal lead wire pad, N-shaped ohmic contact metal layer and metal lead wire pad 2208 are located at device
Curved surface vertex position top.
Fig. 3 is the curved body that the multilayer semiconductor structure on the supporting substrate of shown device is a depression, the device
InGaAlN thin film is the curved body of a depression.2301 is the InGaAlN thin film that have passed through roughening treatment in figure, and 2302 are
Device upper surface is passivated antireflection layer, and 2303 is passivated metal layer and diffusion impervious layer at device lower surface and complementation electrode, and 2304
For pressure welding metal level, 2305 is Ohmic contact reflector layer, and 2306 is supporting substrate, and 2307 is supporting substrate metal layer on back,
2308 is N-shaped ohmic contact metal layer and metal lead wire pad.
Above-mentioned two it is shown that the devices of vertical stratification, support substrate is preferably silicon substrate, be also applied for other metals,
Quasiconductor conductive substrates.To above-described embodiment structure, obviously modification and device critical key element simply reconfigure and are all
Protected by the present invention, wherein obvious modification includes present invention can also apply to the LED of non-perpendicular structure lights
On device, its substrate is preferably Sapphire Substrate, is also applied for other idioelectric substrates.
The first method for manufacturing the indium-gallium-aluminum-nitrogen based semiconductor light-emitting device of above-mentioned deformation proposed by the present invention, its
Including：Ultra-violet curing glue-line is made on InGaAlN thin film；Ultraviolet light supporting substrate is made on ultra-violet curing glue-line；With
Ultraviolet light, makes ultra-violet curing adhesive curing, uv-curable glue cure shrinkage make InGaAlN thin film that curved shape is presented.
The second proposed by the present invention method for manufacturing the indium-gallium-aluminum-nitrogen based semiconductor light-emitting device of above-mentioned deformation, its
Including：The transition zone of low melting point, thermal coefficient of expansion more than InGaAlN thin film is made on InGaAlN thin film, in the transition zone
Upper making transfer base substrate, is provided with barrier layer between transition zone and transfer base substrate；High-temperature is risen, in the transition zone in softening
Or during molten state, then lowering the temperature solidifies transition zone, and to InGaAlN thin film curved surface is formed.
The process of manufacture curved surface device of the present invention is sketched below by example.
As shown in figure 4, the device architecture dispaly state is the device manufactured transfer substrate after peeled off growth substrates
State.When device is prepared into shown step, chip is heated.Now, 302 is Ohmic contact reflecting layer, and 301 is indium
Gallium-aluminium-nitrogen film, 303 is boundary-passivated layer, and 304 is the surfaces of roughening.Transition zone 306 is the metal of low melting point in hypothesis figure, and
Its thermal coefficient of expansion is provided with effective barrier layer more than between InGaAlN thin film, and metal level 306 and transfer substrate 308,
Then in softening or molten state, InGaAlN thin film 301 returns to free stress state to metal 306.It is warmed up to high temperature
When, it is probably smooth or bending when InGaAlN thin film releases stress, when metal temperature reduces solidifying, due to gold
The thermal coefficient of expansion of category layer 306 makes device that curve form is presented more than thin film 301, and the curved surface is the curved surface of depression, final
The structure for arriving is structure as shown in Figure 3.
If the thermal coefficient of expansion of metal level 306 is less than InGaAlN thin film 301, when metal temperature reduces solidifying,
Due to the contraction of InGaAlN thin film, make device to form the curve form of protrusion, finally give device junction as shown in Figure 2
Structure.Transition zone can be metal and its alloys such as indium metal, gallium, the stannum of low melting point.
If in transfer process, 308 is ultraviolet light supporting substrate, and transition zone 306 is uv-curable glue, then can be due to
The cure shrinkage of uv-curable glue is present, and also makes device that concave curvature shape is presented.
In order that device is presented curve form, transition zone 306 can be Colophonium, wax etc. be easy to melt and soften it is organic
Thing.
Producing the method for curved surface can shift substrate realization at the 1st time, substrate realization can also be shifted at the 2nd time, also may be used
To realize in the 3rd substrate transfer, can make device form curved surface if the substrate transfer of more than three times is shifted every time, also may be used
Device is set to form curved surface with the additive effect for being transfer twice or more than twice.
As long as obtained similar to the curved surface device shown in Fig. 2 and Fig. 3 using structure of the present invention, methods and techniques
Structure is all protected by the present invention.
The invention discloses a kind of method of the indium-gallium-aluminum-nitrogen based semiconductor light-emitting device of manufacture deformation, is related to indium-gallium-aluminum-nitrogen
Based semiconductor light-emitting device, it passes through to improve electronics distribution is improved the photoelectric properties and reliability of device.The present invention is carried
Go out the multilayer semiconductor structure that the indium-gallium-aluminum-nitrogen based semiconductor light-emitting device of deformation is included in support substrate, and support substrate,
The curved curved surface of the multilayer semiconductor structure.Proposition method of the present invention includes：Ultra-violet curing is made on InGaAlN thin film
Glue-line；Ultraviolet light supporting substrate is made on ultra-violet curing glue-line；With ultraviolet light, ultra-violet curing adhesive curing is made, it is ultraviolet
Solidification glue cure shrinkage makes InGaAlN thin film that curved shape is presented.Increase the effective contact face of ohmic contact layer and luminescent layer
Product so that luminous efficiency is improved.So that the photoelectric properties and reliability of device are improved.
Claims (5)
1. the manufacture method of the indium-gallium-aluminum-nitrogen based semiconductor light-emitting device of a kind of deformation, the indium-gallium-aluminum-nitrogen base semiconductor of the deformation
Luminescent device includes support substrate and the multilayer semiconductor structure in support substrate, and the indium-gallium-aluminum-nitrogen base of the deformation is partly led
The method of body luminescent device includes：
Ultra-violet curing glue-line is made on InGaAlN thin film；
Ultraviolet light supporting substrate is made on ultra-violet curing glue-line；
With ultraviolet light, ultra-violet curing adhesive curing, uv-curable glue cure shrinkage is set to make InGaAlN thin film that Curved is presented
Shape.
2. the manufacture method of the indium-gallium-aluminum-nitrogen based semiconductor light-emitting device of a kind of deformation, the indium-gallium-aluminum-nitrogen base semiconductor of the deformation
Luminescent device includes support substrate and the multilayer semiconductor structure in support substrate, and the indium-gallium-aluminum-nitrogen base of the deformation is partly led
The method of body luminescent device includes：
Low melting point is made on InGaAlN thin film and thermal coefficient of expansion is more than or less than the transition zone of InGaAlN thin film, at this
Transfer base substrate is made on transition zone, barrier layer is provided between transition zone and transfer base substrate；
High-temperature is risen, when the transition zone is in softening or molten state, then lowering the temperature solidifies transition zone, to InGaAlN thin film
Form curved surface.
3. manufacture method according to claim 2, it is characterised in that：The transition zone is metal.
4. manufacture method according to claim 3, it is characterised in that：The metal is the one kind or many in indium, gallium or stannum
Plant combination.
5. manufacture method according to claim 2, it is characterised in that：The transition zone be the one kind in Colophonium or wax or it
Combination.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110026135.1A CN102610723B (en) | 2011-01-24 | 2011-01-24 | Method for manufacturing deformed indium-gallium-aluminum-nitrogen-based semiconductor light emitting device |
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|---|---|---|---|
| CN201110026135.1A CN102610723B (en) | 2011-01-24 | 2011-01-24 | Method for manufacturing deformed indium-gallium-aluminum-nitrogen-based semiconductor light emitting device |
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| CN102610723B true CN102610723B (en) | 2017-04-12 |
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| CN103117345A (en) * | 2013-01-31 | 2013-05-22 | 武汉迪源光电科技有限公司 | Light emitting diode |
| JP6215612B2 (en) * | 2013-08-07 | 2017-10-18 | ソニーセミコンダクタソリューションズ株式会社 | LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT WAFER, AND ELECTRONIC DEVICE |
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| CN101415279A (en) * | 2007-10-15 | 2009-04-22 | 株式会社日立显示器 | Organic electro-luminescent display device |
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| KR101305876B1 (en) * | 2007-08-09 | 2013-09-09 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| KR20100024231A (en) * | 2008-08-25 | 2010-03-05 | 삼성전자주식회사 | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
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Address after: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee before: LATTICE POWER (JIANGXI) Corp. |
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