CN102610538B - Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field - Google Patents
Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field Download PDFInfo
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Abstract
The invention discloses a method for rapidly elevating the reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring a tunneling electric field. The method comprises the steps of measuring relevant parameters of an operating voltage window and a tunneling electric field window of the SONOS; completing the ONO (oxide-nitride-oxide) filming of the SONOS to be tested, then measuring the tunneling electric field window; deducting the operating voltage window of the SONOS to be tested according to the tunneling electric field window and the relevant parameters of the SONOS to be tested; and elevating the properties of the data retention of the SONOS to be tested according to the operating voltage window of the SONOS to be tested. According to the method, an electronic/hole escape mechanism of the SONOS device and a principle corresponding to a measuring method of the tunneling electric field are utilized, a positive tunneling electric field and a negative tunneling electric field of an ONO film are measured, and the properties of the data retention of the SONOS device are judged, so that the technique process of the elevation of the reliability is simplified, the elevation time is shortened, and the batch test is facilitated.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relating to a kind of method carrying out Fast Evaluation SONOS reliability by measuring tunnelling electric field.
Background technology
SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, silicon-oxide-nitride--oxide-polysilicon) flush memory device, owing to possessing good scaled down characteristic and radiation-resisting performance, become one of flash type main at present.But SONOS flush memory device is also faced with many problems in application, wherein, it is Endurance (electric erasable endurance) characteristic that the problem that reliability is relevant mainly contains two: one, is exactly to weigh SONOS device after repeatedly program/erase, the degeneration that device property aspect is possible; Two is DataRetention (data retention) characteristics, and weighing SONOS device is not exactly having the data retention in additional power source situation.
At present, industry, to the evaluation of the data retention characteristic of SONOS, is generally carried out after product completes All Jobs, method toasts SONOS device at the temperature of such as 85 DEG C, measures baking different time sections (such as 1,5,, 168 hours, 5 time points) V
tp-V
tewindow (V
tpfor write state electronic voltage, V
tefor erase status hole voltage), then the time was taken the logarithm by second, with the logarithm value of time for X-axis, V
tp-V
tewindow is Y-axis, carries out Linear Recurrence, such as, be pushed into for 10 years, judges V now
tp-V
tewhether window meets the minimum identifiable design operating voltage window required by product design.The shortcoming of this method is length consuming time, usually needs just can complete evaluation in 168 hours, and this brings difficulty to the application of batch testing.
In practice, the normal time adopting the method improving baking temperature to shorten evaluation, such as, device needs baking 168 hours at 85 DEG C, its V
tp-V
techaracteristic when characterizing device uses 10 years under normal conditions could be used for, and according to temperature reliability temperature inversion formula: AF=exp [(Ea/k) × (1/Tu-1/Ta)], wherein, AF is accelerated factor, Ea is activation energy, k is Boltzmann constant (8.6 × 10e-5eV/K), Tu is the absolute temperature under normality, and Ta is the absolute temperature under acceleration mode, can converse, at 250 DEG C, only need baking 11 hours, its V
tp-V
tejust can the characteristic of characterizing device when using 10 years under normal conditions.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method carrying out Fast Evaluation SONOS reliability by measuring tunnelling electric field, and it is simple, quick, and can be used for batch testing.
For solving the problems of the technologies described above, the method carrying out Fast Evaluation SONOS reliability by measuring tunnelling electric field of the present invention, comprises the following steps:
1) the operating voltage window of SONOS and the relevance parameter of tunnelling electric field window is measured;
2) after SONOS to be measured completes ONO film forming, measure the positive and negative tunnelling electric field of this ONO film, and calculate tunnelling electric field window;
3) according to step 2) tunnelling electric field window and described relevance parameter, derive the operating voltage window of this SONOS to be measured;
4) according to step 3) operating voltage window, evaluate the data retention characteristic of this SONOS to be measured.
Described step 1), further comprising the steps:
11) measure the positive and negative tunnelling electric field of multiple SONOS sample ONO film, and calculate the tunnelling electric field window of each sample;
12), after high-temperature baking SONOS sample, measure write state electronic voltage and the erase status hole voltage of each sample, and calculate the operating voltage window of each sample;
13) linear fit is done to the above-mentioned window data calculated, obtain the relevance parameter of operating voltage window and tunnelling electric field window.
The measurement of described positive and negative tunnelling electric field, comprises the following steps:
A) electrical thickness of ONO film is measured;
B) utilize Quantox, constantly accumulate positive charge on ONO film surface, and measure the surface potential of film, in conjunction with the thickness of ONO film, calculate positive tunnelling electric field;
C) utilize Quantox, constantly accumulate negative electrical charge on ONO film surface, and measure the surface potential of film, in conjunction with the thickness of ONO film, calculate negative tunnelling electric field.
The mechanism that the present invention utilizes the electrons escape mechanism of SONOS device corresponding with the method for measurement of tunnelling electric field, after completing ONO film forming, just at once by measuring the positive and negative tunnelling electric field of ONO film, the Data Retention of SONOS device is evaluated, and unconventionally to carry out again after product is made, thus breach traditional method for evaluating reliability, simplify the technological process of evaluation, significantly shorten the time required for evaluation, and can batch testing be realized.
Accompanying drawing explanation
Fig. 1 is the electron escape mechanism schematic diagram of SONOS device;
Fig. 2 is the principle schematic of the surface potential testing ONO film with Quantox;
Fig. 3 is the test result schematic diagram of Fig. 2, i.e. the graph of a relation of electric charge added by the surface potential of ONO film and film surface;
Fig. 4 is in the embodiment of the present invention, the linear relationship chart between the operating voltage window of SONOS device and tunnelling electric field window.
Embodiment
Understand more specifically for having technology contents of the present invention, feature and effect, now in conjunction with the accompanying drawings and embodiments, details are as follows:
The mechanism that the electrons of SONOS device is escaped mainly is divided into two parts: temperature correlation item and time correlation item, wherein, the Data Retention of SONOS device is affected to the item of larger part mainly some time correlations, namely relevant to tunnelling project, as shown in Figure 1, comprise trap to being with tunnelling (trap-to-bandtunneling, T-B), trap is to trap tunnelling (trap-to-trap tunneling, T-T), trap tunnelling (band to-trap tunneling, B-T) can be brought to.
Tunnelling electric field can be measured with Quantox (the instant measuring technique of oxide film electrical parameter), and measuring principle is, Quantox uses corona discharge, is placed on by electric charge on ONO film and Kelvin probe, to detect the surface potential V of ONO film
s, as can be seen from Figure 2, surface potential V
s=V
ox+ Ψ
si+ V
trap+ V
siON, wherein, V
oxfor tunnel oxide electromotive force; Ψ
sifor the surface potential of silicon base; V
trap+ V
siONfor polysilicon-barrier oxide layer-silicon nitride layer (S
ioN) electromotive force is the internal electric field set up by tunnelling current.Visible, the tunnelling electric field measured with Quantox, just in time can cover aforementioned all tunnelling occur needed for electric field and.After there is complete tunnelling in each tunic, surface potential V
sthe quantity of electric charge no longer accumulated with ONO film surface is changed, as shown in Figure 3, surface potential V now
sbe tunnelling electromotive force V
tun, and tunnelling electric field E
tunfollowing formulae discovery then can be utilized to obtain:
Wherein, X
tunfor the electrical thickness of ONO (Oxide-Nitride-Oxide, oxidenitride oxide) film, prior art measurement can be utilized to obtain.
In Fig. 3, what carry out on ONO film surface is the accumulation of negative electrical charge, and therefore, that obtain is negative tunnelling electric field E
- tun, i.e. tunneled holes electric field.If what carry out on ONO film surface is the accumulation of positive charge, then can obtain positive tunnelling electric field E
+ tun, i.e. electron tunneling electric field.Calculate the difference of positive and negative tunnelling electric field | E
+ tun-E
- tun|, can obtain tunnelling electric field window, it can reflect the different situations of electron tunneling and tunneled holes, and this just in time can with the V of SONOS device
tpand V
tecorresponding, thus, the measurement of tunnelling electric field window can be utilized, judge the Data Retention of SONOS.
Below by one embodiment of the present of invention, method of the present invention is described in detail.
1, the measurement of relevance parameter
Get 7 SONOS samples, by conventional method, measure the electrical thickness of each sample ONO film respectively.
Utilize Quantox, at the ONO film surface constantly stored charge of sample, and measure the surface potential of ONO film.Added by film surface, ranges of charge is :-15e-06 ~ 15e-06C/cm
2(this scope can be optimized adjustment according to the needs in production capacity or technology controlling and process).
According to aforesaid tunnelling electric Field Calculation method, calculate the positive tunnelling electric field of each SONOS sample and negative tunnelling electric field, and by the difference of positive and negative tunnelling electric field, obtain the tunnelling electric field window of each sample.
Under 250 DEG C of high temperature, baking SONOS sample, after 11 hours, measures the V of each sample
tpand V
te, then, calculate V
tp-V
te, obtain operating voltage window during each sample 10 years.
With operating voltage window when 10 years for ordinate, tunneling voltage window is abscissa mapping, and uses straight line fit data point, as shown in Figure 4, is obtained the relevance parameter of operating voltage window and tunnelling electric field window by the slope of straight line.
2, reliability evaluation
After SONOS device to be measured completes ONO film forming, first, the electrical thickness of this ONO is measured.
Then, utilize Quantox, carry out the continuous accumulation of positive charge on this ONO film surface, obtain positive tunnelling electric field; Carry out the continuous accumulation of negative electrical charge again, obtain negative tunnelling electric field.During test, added by ONO film surface, ranges of charge is :-15e-06 ~ 15e-06C/cm
2.
According to the positive and negative tunnelling electric field recorded, calculate the tunnelling electric field window of this SONOS device to be measured, then, according to acquired relevance parameter, derive V during this SONOS device to be measured 10 years
tp-V
te.Judge this V
tp-V
tewhether window is greater than 300mV (minimum identifiable design operating voltage window), if so, then shows that the Data Retention life-span of this SONOS device to be measured can reach 10 years.
After adopting method of the present invention, just can carry out at once after ONO film forming the reliability evaluation of SONOS device, do not need again as traditional evaluation method, must wait until that product is made just to evaluate afterwards, and, time required for evaluation have also been obtained and significantly reduces, thus may be used for the reliability testing of batch SONOS device, to improve the efficiency of test.
Claims (6)
1. evaluating a method for silicon-oxide-nitride--oxide-polysilicon reliability by measuring tunnelling electric field, it is characterized in that, comprise the following steps:
1) the tunnelling electric field window of silicon-oxide-nitride--oxide-multi-crystalline silicon sample is measured, then at 250 DEG C, silicon-oxide-nitride--oxide-multi-crystalline silicon sample is toasted, measure the operating voltage window of silicon-oxide-nitride--oxide-multi-crystalline silicon sample, obtain the operating voltage window of silicon-oxide-nitride--oxide-multi-crystalline silicon sample and the relevance parameter of tunnelling electric field window;
2) after silicon-oxide-nitride--oxide-polysilicon to be measured completes oxide-film-nitride film-oxide-film symbiosis film film forming, measure the positive and negative tunnelling electric field of this oxide-film-nitride film-oxide-film symbiosis film, and calculate tunnelling electric field window;
3) according to step 2) tunnelling electric field window and described relevance parameter, derive the operating voltage window of this silicon-oxide-nitride--oxide-polysilicon to be measured;
4) according to step 3) operating voltage window, evaluate the data retention characteristic of this silicon-oxide-nitride--oxide-polysilicon to be measured.
2. evaluate the method for silicon-oxide-nitride--oxide-polysilicon reliability as claimed in claim 1, it is characterized in that, described step 1), further comprising the steps:
11) measure the positive and negative tunnelling electric field of multiple silicon-oxide-nitride--oxide-multi-crystalline silicon sample oxide-film-nitride film-oxide-film symbiosis film, and calculate the tunnelling electric field window of each sample;
12) measure write state electronic voltage and the erase status hole voltage of each sample, and calculate the operating voltage window of each sample;
13) linear fit is done to the above-mentioned window data calculated, obtain the relevance parameter of operating voltage window and tunnelling electric field window.
3. evaluate the method for silicon-oxide-nitride--oxide-polysilicon reliability as claimed in claim 1 or 2, it is characterized in that, the measurement of described positive and negative tunnelling electric field, comprises the following steps:
A) electrical thickness of oxide-film-nitride film-oxide-film symbiosis film is measured;
B) the instant measuring technique of oxide film electrical parameter is utilized, constantly positive charge is accumulated on oxide-film-nitride film-oxide-film symbiosis film surface, and measure the surface potential of film, in conjunction with the thickness of oxide-film-nitride film-oxide-film symbiosis film, calculate positive tunnelling electric field;
C) the instant measuring technique of oxide film electrical parameter is utilized, constantly negative electrical charge is accumulated on oxide-film-nitride film-oxide-film symbiosis film surface, and measure the surface potential of film, in conjunction with the thickness of oxide-film-nitride film-oxide-film symbiosis film, calculate negative tunnelling electric field.
4. evaluate the method for silicon-oxide-nitride--oxide-polysilicon reliability as claimed in claim 3, it is characterized in that: the charge density scope added by oxide-film-nitride film-oxide-film symbiosis film surface is-15e-06 ~ 15e-06Ccm
-2.
5. evaluate the method for silicon-oxide-nitride--oxide-polysilicon reliability as claimed in claim 1, it is characterized in that: step 1), baking silicon-oxide-nitride--oxide-multi-crystalline silicon sample 11 hours.
6. evaluate the method for silicon-oxide-nitride--oxide-polysilicon reliability as claimed in claim 2, it is characterized in that: step 13) in, described linear fit is fitting a straight line, and described relevance parameter is the ratio of operating voltage window and tunnelling electric field window.
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| CN112017985A (en) * | 2020-08-28 | 2020-12-01 | 上海华力微电子有限公司 | Method and device for monitoring quality of ONO film layer of memory on line and readable storage medium |
Citations (2)
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| US6339557B1 (en) * | 1999-06-02 | 2002-01-15 | Denso Corporation | Charge retention lifetime evaluation method for nonvolatile semiconductor memory |
| CN1531095A (en) * | 2003-03-17 | 2004-09-22 | ���ǵ�����ʽ���� | Local silicon-oxide-nitride-oxide silicon structure and producing method thereof |
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| JP3810382B2 (en) * | 2003-05-22 | 2006-08-16 | 松下電器産業株式会社 | Reliability evaluation method for nonvolatile semiconductor memory device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6339557B1 (en) * | 1999-06-02 | 2002-01-15 | Denso Corporation | Charge retention lifetime evaluation method for nonvolatile semiconductor memory |
| CN1531095A (en) * | 2003-03-17 | 2004-09-22 | ���ǵ�����ʽ���� | Local silicon-oxide-nitride-oxide silicon structure and producing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| An analytical retention model for SONOS nonvolatile memory devices in the excess electron state;Yu Wang等;《Solid-State Electronics》;20040810;第49卷;第97-107页 * |
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