CN102608866A - Acrylic acid positive photoresist and preparation method thereof - Google Patents
Acrylic acid positive photoresist and preparation method thereof Download PDFInfo
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- CN102608866A CN102608866A CN2012100336738A CN201210033673A CN102608866A CN 102608866 A CN102608866 A CN 102608866A CN 2012100336738 A CN2012100336738 A CN 2012100336738A CN 201210033673 A CN201210033673 A CN 201210033673A CN 102608866 A CN102608866 A CN 102608866A
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- positive photoresist
- acrylic acid
- acid positive
- photoacid generator
- ester
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Abstract
The invention discloses an acrylic acid positive photoresist and a preparation method thereof. The acrylic acid positive photoresist is prepared from the following components in percentage by weight under the conditions of dust-free and yellow light: 5 to 30 weight percent of polyacrylic resin, 1 to 20 weight percent of photoacid generator, 5 to 40 weight percent of ester containing a plurality of hydroxide radicals and 30 to 60 weight percent of propylene glycol methyl ether acetate. The preparation method comprises the following steps of: (1) adding the ester containing a plurality of hydroxide radicals into the propylene glycol methyl ether acetate; (2) stirring the materials in the step (1) for 6 to 10 hours to form mixed solution; (3) adding the polyacrylic resin and the photoacid generator into the mixed solution; (4) and stirring a composition obtained in the step (3) to obtain the acrylic acid positive photoresist. The acrylic acid positive photoresist prepared according to the invention has the advantages of small diffraction, high resolution and sensitivity, large contrast, good permeability, strong etching resistance capacity and the like.
Description
Technical field
The present invention relates to a kind of photoresist, relate in particular to a kind of positive photoresist composition and method of making the same of acryl resin system.
Background technology
In the preparation process of integrated circuit, photoresist is the key function material that carries out photoetching process.Photoetching is the precision surface process technology that a kind of figure duplicates and chemical corrosion combines.Simply be exactly method with photographic copying with the design transfer on the mask to the photoresist of silicon chip surface, to realize follow-up selective etching is arranged or injecting and mix.It is of paramount importance one technology in the IC manufacturing industry, has occupied step only about half of in the chip manufacturing, accounts for 35% of all costs.And photoresist is particularly important as the main material in the photoetching process.Photoresist can be divided into two types: the positive photoresist of photic dissolving and the negative photoresist of photopolymerization.So-called positive photoresist is on mask plate, and the part of graph exposure is developed the liquid flush away, stays unexposed figure and forms figure; And negative photoresist is in photoetching process, and by flush away, and the part of exposure forms figure to unexposed part when developing on the mask plate.Positive glue is compared with negative glue and is existed the resolution height, and neat in edge anti-carves advantages such as being prone to aligning.
Be inversely proportional at photoetching process intermediate-resolution and exposure wavelength, promptly the short more resolution of exposure wavelength is high more.In order to improve the resolution of photoresist, people are constantly improving photoresist always, but the wavelength of the uv-exposure light source that existing photoresist is suitable for is generally between 300-600nm, so the low problem of ubiquity resolution.
Summary of the invention
First technical matters to be solved by this invention is: according to the deficiency that prior art exists, provide that a kind of diffraction is little, resolution and the acrylic acid positive photoresist highly sensitive, that contrast is big and permeability good, anti-etching ability is strong.
Second technical matters to be solved by this invention is: according to the deficiency that prior art exists, provide that a kind of diffraction is little, the preparation method of resolution and highly sensitive, that contrast is big and permeability good, anti-etching ability is strong acrylic acid positive photoresist.
For solving above-mentioned first technical matters, technical scheme of the present invention is:
A kind of acrylic acid positive photoresist, said positive photoresist is comprising that following raw materials by weight percent is prepared from:
Polyacrylic resin 5～30wt%,
Photoacid generator 1～20wt%,
Ester 5～the 40wt% that contains a plurality of hydroxyls,
1-Methoxy-2-propyl acetate 30～60wt%.
As a kind of preferred, said positive photoresist is comprising that following raw materials by weight percent is prepared from:
Polyacrylic resin 5～30wt%,
Photoacid generator 1～10wt%,
Ester 5～the 40wt% that contains a plurality of hydroxyls,
1-Methoxy-2-propyl acetate 30～60wt%.
Wherein, said Photoacid generator is the compound that under ultraviolet radiation, can discharge strong acid.
As a kind of preferred, said Photoacid generator is the salt (1:1) of triphenylsulfonium and TFMS.
As a kind of preferred, the said ester that contains a plurality of hydroxyls is dipentaerythritol acrylate or dipentaerythritol five acrylic ester.
As a kind of improvement, said acrylic acid positive photoresist is applicable to that wavelength is the exposure light source of 365 nanometers, 248 nanometers, 193 nanometers or 13.5 nanometers.
Acrylic acid positive photoresist of the present invention can adopt conventional glue spreading method spin coating, and glue is coated on the wafer uniformly, generates required figure through series of steps such as preceding baking, exposure, back baking, developments again.
For solving above-mentioned second technical matters, technical scheme of the present invention is:
The preparation method of acrylic acid positive photoresist is under dustless, gold-tinted condition, and according to polyacrylic resin 5～30wt%, Photoacid generator 1～20wt% contains the ester 5～40wt% of a plurality of hydroxyls, 1-Methoxy-2-propyl acetate 30～60wt%; Or polyacrylic resin 5～30wt%, Photoacid generator 1～10wt% contains the ester 5～40wt% of a plurality of hydroxyls, and the percentage by weight of 1-Methoxy-2-propyl acetate 30～60wt% may further comprise the steps preparation:
(1) in 1-Methoxy-2-propyl acetate, adds the ester that contains a plurality of hydroxyls;
(2) material with step (1) stirs 6～10 hours formation mixed solutions;
(3) in said mixed solution, add polyacrylic resin, Photoacid generator;
(4) composition that (3) is obtained stirred 20～30 hours, obtained said acrylic acid positive photoresist.
Wherein, said Photoacid generator is the compound that under ultraviolet radiation, can discharge strong acid.
As a kind of preferred, said Photoacid generator is the salt (1:1) of triphenylsulfonium and TFMS.
As a kind of preferred, the said ester that contains a plurality of hydroxyls is dipentaerythritol acrylate or dipentaerythritol five acrylic ester.
Owing to adopted technique scheme, the invention has the beneficial effects as follows:
In the acrylic acid positive photoresist composition of the present invention; Esterification takes place and is crosslinked in ester and the polyacrylic resin that contains a plurality of hydroxyls under the uniform temperature condition; After overexposure; The acid hydrolysis that the exposure area is produced by Photoacid generator, and then the exposure area is dissolved in when developing and obtains needed positive glue pattern in the developer solution.The present invention is a brand-new acrylic acid positive photoresist mechanism; According to the present invention the acrylic acid positive photoresist of preparation have that diffraction is little, resolution and highly sensitive, advantage such as contrast is big and permeability good, anti-etching ability is strong; The exposure light source that can be used for 13.5 nanometers has overcome the negative glue unvanquishable shortcoming in some zones of acrylic acid system.
Embodiment
Below in conjunction with concrete embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment 1
Under dustless, gold-tinted condition, according to polyacrylic resin 5wt%, the salt of triphenylsulfonium and TFMS (1:1) 2wt%, dipentaerythritol acrylate 8wt%, the percentage by weight of 1-Methoxy-2-propyl acetate 30wt% may further comprise the steps preparation:
(1) in 1-Methoxy-2-propyl acetate, adds dipentaerythritol acrylate;
(2) material with step (1) stirs 6 hours formation mixed solutions;
(3) in said mixed solution, add the salt (1:1) of polyacrylic resin, triphenylsulfonium and TFMS;
(4) composition that (3) is obtained stirred 20 hours, obtained said acrylic acid positive photoresist.
Embodiment 2
Under dustless, gold-tinted condition, according to polyacrylic resin 30wt%, the salt of triphenylsulfonium and TFMS (1:1) 20wt%, dipentaerythritol five acrylic ester 40wt%, the percentage by weight of 1-Methoxy-2-propyl acetate 60wt% may further comprise the steps preparation:
(1) in 1-Methoxy-2-propyl acetate, adds dipentaerythritol five acrylic ester;
(2) material with step (1) stirs 10 hours formation mixed solutions;
(3) in said mixed solution, add the salt (1:1) of polyacrylic resin, triphenylsulfonium and TFMS;
(4) composition that (3) is obtained stirred 30 hours, obtained said acrylic acid positive photoresist.
Embodiment 3
Under dustless, gold-tinted condition, according to polyacrylic resin 15wt%, the salt of triphenylsulfonium and TFMS (1:1) 6wt%, dipentaerythritol acrylate 20wt%, the percentage by weight of 1-Methoxy-2-propyl acetate 50wt% may further comprise the steps preparation:
(1) in 1-Methoxy-2-propyl acetate, adds dipentaerythritol acrylate;
(2) material with step (1) stirs 8 hours formation mixed solutions;
(3) in said mixed solution, add the salt (1:1) of polyacrylic resin, triphenylsulfonium and TFMS;
(4) composition that (3) is obtained stirred 24 hours, obtained said acrylic acid positive photoresist.
More than show and described ultimate principle of the present invention, principal character and advantage of the present invention.The technician of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the instructions just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The scope of the claimed invention by the appended claims and their equivalents defined
.
All are from design of the present invention, and the structure conversion of having done without creative work all drops within protection scope of the present invention.
Claims (10)
1. acrylic acid positive photoresist, it is characterized in that: said positive photoresist is comprising that following raw materials by weight percent is prepared from:
Polyacrylic resin 5～30wt%,
Photoacid generator 1～20wt%,
Ester 5～the 40wt% that contains a plurality of hydroxyls,
1-Methoxy-2-propyl acetate 30～60wt%.
2. acrylic acid positive photoresist as claimed in claim 1 is characterized in that: said positive photoresist is comprising that following raw materials by weight percent is prepared from:
Polyacrylic resin 5～30wt%,
Photoacid generator 1～10wt%,
Ester 5～the 40wt% that contains a plurality of hydroxyls,
1-Methoxy-2-propyl acetate 30～60wt%.
3. according to claim 1 or claim 2 acrylic acid positive photoresist, it is characterized in that: said Photoacid generator is the compound that under ultraviolet radiation, can discharge strong acid.
4. acrylic acid positive photoresist as claimed in claim 3 is characterized in that: said Photoacid generator is the salt (1:1) of triphenylsulfonium and TFMS.
5. according to claim 1 or claim 2 acrylic acid positive photoresist, it is characterized in that: the said ester that contains a plurality of hydroxyls is dipentaerythritol acrylate or dipentaerythritol five acrylic ester.
6. according to claim 1 or claim 2 acrylic acid positive photoresist, it is characterized in that: said acrylic acid positive photoresist is applicable to that wavelength is the exposure light source of 365 nanometers, 248 nanometers, 193 nanometers or 13.5 nanometers.
7. the method for preparing acrylic acid positive photoresist as claimed in claim 6 is characterized in that under dustless, gold-tinted condition, by claim 1 or 2 described percentage by weights, may further comprise the steps preparation:
(1) in 1-Methoxy-2-propyl acetate, adds the ester that contains a plurality of hydroxyls;
(2) material with step (1) stirs 6～10 hours formation mixed solutions;
(3) in said mixed solution, add polyacrylic resin, Photoacid generator;
(4) composition that (3) is obtained stirred 20～30 hours, obtained said acrylic acid positive photoresist.
8. the preparation method of acrylic acid positive photoresist as claimed in claim 7 is characterized in that: said Photoacid generator is the compound that under ultraviolet radiation, can discharge strong acid.
9. the preparation method of acrylic acid positive photoresist as claimed in claim 8 is characterized in that: said Photoacid generator is the salt (1:1) of triphenylsulfonium and TFMS.
10. like the preparation method of the described acrylic acid positive photoresist of the arbitrary claim of claim 7 to 9, it is characterized in that: the said ester that contains a plurality of hydroxyls is dipentaerythritol acrylate or dipentaerythritol five acrylic ester.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012100336738A CN102608866A (en) | 2012-02-15 | 2012-02-15 | Acrylic acid positive photoresist and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100336738A CN102608866A (en) | 2012-02-15 | 2012-02-15 | Acrylic acid positive photoresist and preparation method thereof |
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| CN102608866A true CN102608866A (en) | 2012-07-25 |
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| CN2012100336738A Pending CN102608866A (en) | 2012-02-15 | 2012-02-15 | Acrylic acid positive photoresist and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107357140A (en) * | 2017-09-14 | 2017-11-17 | 江阴江化微电子材料股份有限公司 | A kind of positive photoresist developer solution and its preparation method and application |
| CN112592304A (en) * | 2020-12-22 | 2021-04-02 | 宁波南大光电材料有限公司 | Polymerizable photoacid generator containing double-onium salt structure, preparation method and photoresist |
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| US20070231735A1 (en) * | 2006-03-28 | 2007-10-04 | Georg Pawlowski | Negative photoresist compositions |
| CN101153121A (en) * | 2005-10-07 | 2008-04-02 | Jsr株式会社 | Radiation-sensitive resin composition for spacer, spacer and method for forming the same |
| WO2009047151A1 (en) * | 2007-10-10 | 2009-04-16 | Basf Se | Sulphonium salt initiators |
| CN101943860A (en) * | 2009-06-08 | 2011-01-12 | 罗门哈斯电子材料有限公司 | Lithographic process |
| CN101952269A (en) * | 2007-10-10 | 2011-01-19 | 巴斯夫欧洲公司 | Sulphonium salt initiators |
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2012
- 2012-02-15 CN CN2012100336738A patent/CN102608866A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101153121A (en) * | 2005-10-07 | 2008-04-02 | Jsr株式会社 | Radiation-sensitive resin composition for spacer, spacer and method for forming the same |
| US20070231735A1 (en) * | 2006-03-28 | 2007-10-04 | Georg Pawlowski | Negative photoresist compositions |
| WO2009047151A1 (en) * | 2007-10-10 | 2009-04-16 | Basf Se | Sulphonium salt initiators |
| CN101952269A (en) * | 2007-10-10 | 2011-01-19 | 巴斯夫欧洲公司 | Sulphonium salt initiators |
| CN101943860A (en) * | 2009-06-08 | 2011-01-12 | 罗门哈斯电子材料有限公司 | Lithographic process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107357140A (en) * | 2017-09-14 | 2017-11-17 | 江阴江化微电子材料股份有限公司 | A kind of positive photoresist developer solution and its preparation method and application |
| CN112592304A (en) * | 2020-12-22 | 2021-04-02 | 宁波南大光电材料有限公司 | Polymerizable photoacid generator containing double-onium salt structure, preparation method and photoresist |
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Application publication date: 20120725 |