CN102605340B - A kind of P-type doped ZnxCd1-xS nanometer material and preparation method thereof - Google Patents
A kind of P-type doped ZnxCd1-xS nanometer material and preparation method thereof Download PDFInfo
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- CN102605340B CN102605340B CN 201210077101 CN201210077101A CN102605340B CN 102605340 B CN102605340 B CN 102605340B CN 201210077101 CN201210077101 CN 201210077101 CN 201210077101 A CN201210077101 A CN 201210077101A CN 102605340 B CN102605340 B CN 102605340B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title abstract description 9
- 239000002086 nanomaterial Substances 0.000 claims abstract description 45
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 37
- 239000011701 zinc Substances 0.000 claims description 35
- 239000000843 powder Substances 0.000 claims description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 27
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 17
- 239000005083 Zinc sulfide Substances 0.000 claims description 17
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 17
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 16
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 8
- 238000010025 steaming Methods 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- -1 0<x<1 Chemical class 0.000 claims 1
- 239000010931 gold Substances 0.000 abstract description 10
- 229910052737 gold Inorganic materials 0.000 abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910052946 acanthite Inorganic materials 0.000 description 4
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 4
- 229940056910 silver sulfide Drugs 0.000 description 4
- 229910002058 ternary alloy Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种P型掺杂ZnxCd1-xS纳米材料及其制备方法，本发明采用化学气相沉积法和气-液-固生长机制，在合成过程中原位掺杂Ag、Cu、N、P等元素进行p型掺杂制备p型掺杂ZnxCd1-xS纳米材料，通过调节蒸有10nm金薄膜的硅片的位置，可以得到不同组分的ZnxCd1-xS纳米材料。本发明P型掺杂ZnxCd1-xS纳米材料具有成分可调，电导率可控的特点。The invention discloses a P-type doped Zn x Cd 1-x S nanomaterial and a preparation method thereof. The invention adopts a chemical vapor deposition method and a gas-liquid-solid growth mechanism, and in-situ doping of Ag, Cu, N, P and other elements are p-type doped to prepare p-type doped Zn x Cd 1-x S nanomaterials, and Zn x Cd 1-x with different components can be obtained by adjusting the position of the silicon wafer evaporated with a 10nm gold film S nanomaterials. The P-type doped Zn x Cd 1-x S nanometer material of the invention has the characteristics of adjustable composition and controllable electrical conductivity.
Description
One, technical field
The present invention relates to a kind of nano material and preparation method thereof, specifically a kind of P type doping of Zn
xCd
1-xS nano material and preparation method thereof.
Two, background technology
II-VI family broad stopband one dimension semiconductor material becomes current study hotspot because of it in the potentiality aspect the nanometer optical device.Because nano material has quantum size effect and large surface-volume ratio, make light, electricity, magnetic, machinery and the chemical property of nano material and body material that obvious difference be arranged.
Ternary alloy II-VI family nano material is by regulating the ratio of various components, can so that the optical property of material modulated.Direct band-gap semicondictor material Zn
xCd
1-xS, energy gap can change between 2.42ev-3.66ev, and its emission wavelength can change between 335nm-512nm accordingly, therefore in application facet such as heterojunction luminescent device, solar cell and photoconductive devices, very large potentiality is arranged.But, up to the present, to ternary alloy nano material Zn
xCd
1-xSynthetic, the doping of S and the research of performance are still seldom.
Three, summary of the invention
The present invention aims to provide a kind of P type doping of Zn
xCd
1-xS nano material and preparation method thereof, technical problem to be solved are to provide the P type doping of Zn that a kind of preparation method is simple, composition is adjustable and specific conductivity is controlled
xCd
1-xThe S nano material.
The growth technique that nano material of the present invention adopts is chemical Vapor deposition process (CVD), and theoretical foundation is gas-liquid-solid (VLS) growth mechanism.Adopt the method for high temperature thermal evaporation, doped source, Cadmium Sulfide (CdS) and zinc sulphide (ZnS) are become steam, steam the small-particle that golden film at high temperature becomes gold on the silicon chip in downstream simultaneously, when carrier gas is transported to silicon chip place, downstream with bulk material, material can be deposited in the particle of gold, just have bulk material and separate out after gold grain is saturated, thereby prepare P type doping of Zn
xCd
1-xThe S nano material.
Technical solution problem of the present invention adopts following technical scheme:
P type doping of Zn of the present invention
xCd
1-xThe S nano material is characterized in that: 0＜x＜1; The doped source of P type doping is selected from Ag
2S, CuS, NH
3, PH
3In one or more.
P type doping of Zn of the present invention
xCd
1-xS preparations of nanomaterials method is as follows:
Take Cadmium Sulfide powder, zinc sulfide powder and solid doped source by proportional quantity, zinc sulfide powder is placed in porcelain boat No. one, a described porcelain boat is placed in the heating source place of tube furnace; Cadmium Sulfide powder and solid doped source mixed grinding are placed in No. two porcelain boats, described No. two porcelain boats are placed in the heating source place of tube furnace and the upstream that described No. two porcelain boats are positioned at a porcelain boat; To steam the gold silicon sheet and be placed in 10-14cm place, heating source downstream, and pass into argon hydrogen mixture in body of heater, in stove, pressure is 1.35 * 10
3Pa, tube furnace begins to heat up subsequently, controls the heating source temperature and is 1000 ℃ and is incubated 2 hours, obtains P type doping of Zn after naturally cooling to room temperature
xCd
1-xThe S nano material;
Described solid doped source is selected from Ag
2S and/or Cu
2S, doping is the 2-10% of Cadmium Sulfide powder and zinc sulfide powder total mass, if ratio is any when multiple.
The purity of described zinc sulfide powder, Cadmium Sulfide powder and solid doped source 〉=99.99%.
The flow velocity of argon hydrogen gas mixture is 30sccm, and argon hydrogen volume ratio is 95: 5.
Temperature rise rate when tube furnace heats up is 20 ℃/min.
P type doping of Zn of the present invention
xCd
1-xS preparations of nanomaterials method is as follows:
Take Cadmium Sulfide powder and zinc sulfide powder and ground and mixed by proportional quantity and get compound, compound is placed in porcelain boat and described porcelain boat and steaming gold silicon sheet are put into tube furnace, porcelain boat is positioned at the heating source place, steam the gold silicon sheet and be positioned at 10-14cm place, heating source downstream, pass into argon hydrogen mixture and gas doped source in body of heater, in stove, pressure is 1.35 * 10
3Pa, porcelain boat place are warming up to 1000 ℃ and be incubated 2 hours, obtain P type doping of Zn
xCd
1-xThe S nano material;
Described gas doping source is selected from NH
3And/or PH
3
The purity of described Cadmium Sulfide powder and zinc sulfide powder 〉=99.99%.
The flow velocity of argon hydrogen gas mixture is 50sccm, and argon hydrogen volume ratio is 95: 5.
Temperature rise rate when tube furnace heats up is 20 ℃/min.
The flow velocity in described gas doping source is 40-60sccm.
Concrete preparation process is as follows when doped source is gas:
1, take respectively the zinc sulfide powder of purity 〉=99.99% and the Cadmium Sulfide powder of purity 〉=99.99% by proportional quantity, add in porcelain boat after ground and mixed.Porcelain boat and steaming gold silicon sheet are put into a silica tube in order, then it is inner that this silica tube is put into the tubular type body of heater.Concrete position is: porcelain boat is positioned at the heating source place, steams the gold silicon sheet and is positioned at heating source downstream 10-14 centimeters.
2, before heating, first logical protection gas argon gas (Ar) cleans the silica tube of tube furnace, clean complete after, silica tube is vacuumized (1 * 10
-3Pa is following), the flow velocity with 50sccm leads to Ar/H simultaneously
2(Ar:95%, H
2: the 5%) flow velocity of gas mixture and 40-60sccm ventilation body doped source, keep air pressure 1.35 * 10
3The Pa left and right, the speed that heating source is sentenced 20 ℃/min rises to 1000 ℃, is incubated 2 hours, naturally cools to room temperature, can obtain P type doping of Zn
xCd
1-xThe S nano material.
Concrete preparation process is as follows when doped source is solid:
1, the zinc sulfide powder that takes purity 〉=99.99% by proportional quantity is put into porcelain boat No. one, takes the Cadmium Sulfide powder of purity 〉=99.99% and the silver sulfide powder of purity 〉=99.99% and puts into porcelain boat No. two.Two porcelain boats and steam the silica tube that gold silicon sheet (Au thickness is 10nm) is put into tube furnace in order make a porcelain boat and No. two porcelain boats be positioned at place, diamond heating source, and No. two porcelain boats are positioned at the upstream of a porcelain boat; Steam the gold silicon sheet and be positioned at 10-14cm place, heating source downstream.
2, before heating, first logical protection gas argon gas (Ar) cleans the silica tube of tube furnace, clean complete after, silica tube is vacuumized (1 * 10
-3Pa is following), the flow velocity with 30sccm leads to Ar/H simultaneously
2(Ar:95%, H
2: 5%) gas mixture, keep air pressure 1.35 * 10
3The Pa left and right, the speed that heating source is sentenced 20 ℃/min rises to 1000 ℃, is incubated 2 hours, naturally cools to room temperature, can obtain P type doping of Zn
xCd
1-xThe S nano material.
The P type doping of Zn of synthesizing in order to detect
xCd
1-xThe electrical properties of S nano material is mainly its bottom gate fieldtron of preparation, and this need to select suitable electrode materials and P type doping of Zn
xCd
1-xThe S nano material forms good ohmic contact.P-shaped material and high-work-function metal easily form ohmic contact, form Schottky contacts with low workfunction metal.So the electrode materials that the present invention selects when the test electrical properties is Precious Metals-Gold (Au), its work function is 5.1eV.The P type doping of Zn that specifically according to a conventional method the present invention is prepared
xCd
1-xThe S nano material is distributed on the titanium dioxide silicon chip, prepares electrode pattern by ultraviolet photolithographic on the titanium dioxide silicon chip, adopts subsequently electron beam evaporation process to prepare gold electrode, described gold electrode and P type doping of Zn of the present invention
xCd
1-xThe S nano material forms ohmic contact, thereby obtains source-drain electrode, then consists of fieldtron with the Cu gate electrode.
The P type doping of Zn of synthesizing in order to detect
xCd
1-xThe S nano material, the present invention adopts field emission scanning electron microscope (FESEM), energy dispersion x-ray spectrometer (EDX) and X-ray diffraction (XRD) to P type Zn
xCd
1-xThe S nano material is carried out structural characterization, to P type Zn
xCd
1-xWhat S nano material device electrical performance testing adopted is the 4200-SCS N-type semiconductorN ability meter that U.S. Keithley company produces.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, Technology proposed by the invention is the synthetic Zn of single stage method
xCd
1-xS ternary alloy nano material, simple to operate.
2, the equipment that relates in the present invention is simple, and reasonable price is suitable for scale operation.
3, the present invention steams the position of gold silicon sheet by adjusting, namely changes base reservoir temperature, can obtain the doping of Zn of different components
xCd
1-xThe S nano material has realized that composition is adjustable.
4, the adulterating method of using in the present invention is also very simple, economical, is integrated into a step with material is synthetic, and can obtains the nano material of different specific conductivity by the atomic percentage conc of regulating hotchpotch, has realized the control to specific conductivity.
Four, description of drawings
Fig. 1 nano material of the present invention SEM figure.Can find out in Fig. 1 that synthetic nano material length has the 60-100 micron.
The XRD figure of Fig. 2 nano material of the present invention.
Fig. 3 is the EDX figure of the nano material for preparing of the present invention.(a) corresponding embodiment 1 wherein, (b) corresponding embodiment 2, (c) corresponding embodiment 3, (d) corresponding embodiment 4.Relatively (a), (b), (c), (d) four figure can find, in synthetic nano material, the content of Zn, Cd is changing, and has realized P type doping of Zn
xCd
1-xConstituent adjustment in the S nano material.
Fig. 4 is the drain-source current-drain-source voltage curve of the different levels of doping nano material for preparing of the present invention.The corresponding embodiment 1 of A curve wherein, the corresponding embodiment 5 of B curve, the corresponding embodiment 6 of C curve.The slope of A, B, the C curve namely specific conductivity of corresponding embodiment has obvious difference, and is to control the variation of specific conductivity by changing doping, so realized that specific conductivity is controlled.
Fig. 5 is the drain-source current of fieldtron under different grid voltages that utilize nano material of the present invention preparation-drain-source voltage curve.Shown in illustration is gate source voltage-drain-source current curve when drain-source voltage is 1V.As can be seen from Figure 5 along with the increase of grid voltage, source-drain current is reducing, and shows that synthetic nano material is the P type.Simultaneously illustration also should be just this fact.By this can prove successful realization P type doping.
Five, embodiment
Embodiment 1:
1, the zinc sulfide powder that takes 0.1 gram purity 〉=99.99% is put into porcelain boat No. one, takes the Cadmium Sulfide powder of 0.15 gram purity 〉=99.99% and the silver sulfide powder of 0.01 gram purity 〉=99.99% and puts into porcelain boat No. two.Two porcelain boats and steam the silica tube that gold silicon sheet (Au thickness is 10nm) is put into tube furnace in order make a porcelain boat and No. two porcelain boats be positioned at place, diamond heating source, and No. two porcelain boats are positioned at the upstream of a porcelain boat; Steam the gold silicon sheet and be positioned at 10-11cm place, heating source downstream.Upstream, downstream are distinguished with gas flow.
2, before heating, first logical protection gas argon gas (Ar) cleans the silica tube of tube furnace, clean complete after, silica tube is vacuumized (1 * 10
-3Pa is following), the flow velocity with 30sccm leads to Ar/H simultaneously
2(Ar:95%, H
2: 5%) gas mixture, keep air pressure 1.35 * 10
3The Pa left and right, the speed that heating source is sentenced 20 ℃/min rises to 1000 ℃, is incubated 2 hours, naturally cools to room temperature, can obtain P type doping of Zn
0.8Cd
0.2The S nano material.
Embodiment 2:
The present embodiment is identical with embodiment 1 preparation method, and different is that the position of steaming the gold silicon sheet is adjusted into heating source downstream 11-12cm, can obtain P type doping of Zn
0.6Cd
0.4S。
Embodiment 3:
The present embodiment is identical with embodiment 1 preparation method, and different is that the position of steaming the gold silicon sheet is adjusted into heating source downstream 12-13cm, can obtain P type doping of Zn
0.4Cd
0.6S。
Embodiment 4:
The present embodiment is identical with embodiment 1 preparation method, and different is that the position of steaming the gold silicon sheet is adjusted into heating source downstream 13-14cm, can obtain P type doping of Zn
0.1Cd
0.9S。
Embodiment 5:
The present embodiment is identical with embodiment 1 preparation method, and the quality of different is silver sulfide powder is 0.02 gram.
Embodiment 6:
The present embodiment is identical with embodiment 1 preparation method, and the quality of different is silver sulfide powder is 0.05 gram.
Claims (6)
1. P type doping of Zn
xCd
1-xS preparations of nanomaterials method is characterized in that:
Press Zn
xCd
1-xThe proportional quantity that the S chemical formula limits takes Cadmium Sulfide powder, zinc sulfide powder and solid doped source, and 0＜x＜1 is placed in porcelain boat No. one with zinc sulfide powder, a described porcelain boat is placed in the heating source place of tube furnace; Cadmium Sulfide powder and solid doped source mixed grinding are placed in No. two porcelain boats, described No. two porcelain boats are placed in the heating source place of tube furnace and the upstream that described No. two porcelain boats are positioned at a porcelain boat; To steam the gold silicon sheet and be placed in 10-14cm place, heating source downstream, and pass into argon hydrogen mixture in body of heater, in stove, pressure is 1.35 * 10
3Pa, tube furnace begins to heat up subsequently, controls the heating source temperature and is 1000 ℃ and is incubated 2 hours, obtains P type doping of Zn after naturally cooling to room temperature
xCd
1-xThe S nano material;
Described solid doped source is selected from Ag
2S and/or Cu
2S, doping is the 2-10% of Cadmium Sulfide powder and zinc sulfide powder total mass;
The flow velocity of described argon hydrogen gas mixture is 30sccm, and the argon hydrogen volume is than being 95:5.
2. preparation method according to claim 1, is characterized in that: the purity of described zinc sulfide powder, Cadmium Sulfide powder and solid doped source 〉=99.99%.
3. preparation method according to claim 1 is characterized in that: the temperature rise rate when tube furnace heats up is 20 ℃/min.
4. P type doping of Zn
xCd
1-xS preparations of nanomaterials method is characterized in that:
Press Zn
xCd
1-xThe proportional quantity that the S chemical formula limits takes Cadmium Sulfide powder and zinc sulfide powder and ground and mixed and gets compound, 0＜x＜1, compound is placed in porcelain boat and described porcelain boat and steaming gold silicon sheet are put into tube furnace, porcelain boat is positioned at the heating source place, steam the gold silicon sheet and be positioned at 10-14cm place, heating source downstream, pass into argon hydrogen mixture and gas doped source in body of heater, in stove, pressure is 1.35 * 10
3Pa, porcelain boat place are warming up to 1000 ℃ and be incubated 2 hours, obtain P type doping of Zn
xCd
1-xThe S nano material;
Described gas doping source is selected from NH
3And/or PH
3, the flow velocity in described gas doping source is 40-60sccm;
The flow velocity of described argon hydrogen gas mixture is 50sccm, and the argon hydrogen volume is than being 95:5.
5. preparation method according to claim 4, is characterized in that: the purity of described Cadmium Sulfide powder and zinc sulfide powder 〉=99.99%.
6. preparation method according to claim 4 is characterized in that: the temperature rise rate when tube furnace heats up is 20 ℃/min.
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| CN113680356B (en) * | 2021-09-26 | 2023-05-02 | 广东轻工职业技术学院 | Zn capable of being used for photocatalytic decomposition of pure water 1-x Cd x S/D-ZnS（en） 0.5 /Pi/Ni a Pi type catalyst preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183147A (en) * | 1996-01-23 | 1998-05-27 | 精工爱普生株式会社 | Solar cell display structure, solar cell electronic device and solar cell watch using the display structure |
| CN1476050A (en) * | 2002-07-08 | 2004-02-18 | ���ǻ�ѧ��ҵ��ʽ���� | Manufacturing method of nitride semiconductor element and nitride semiconductor element |
| CN101503184A (en) * | 2009-03-09 | 2009-08-12 | 合肥工业大学 | Preparation of ternary chalcongen semiconductor compound nano belt |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183147A (en) * | 1996-01-23 | 1998-05-27 | 精工爱普生株式会社 | Solar cell display structure, solar cell electronic device and solar cell watch using the display structure |
| CN1476050A (en) * | 2002-07-08 | 2004-02-18 | ���ǻ�ѧ��ҵ��ʽ���� | Manufacturing method of nitride semiconductor element and nitride semiconductor element |
| CN101503184A (en) * | 2009-03-09 | 2009-08-12 | 合肥工业大学 | Preparation of ternary chalcongen semiconductor compound nano belt |
Non-Patent Citations (1)
| Title |
|---|
| 姚有智等.微波法制备碳纳米管负载ZnCdS纳米粒子及其光催化性能.《安徽师范大学学报（自然科学版）》.2010,第33卷(第2期),期刊第144-147页. * |
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