CN102593303A - Light-emitting element with embolisms - Google Patents

Light-emitting element with embolisms Download PDF

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Publication number
CN102593303A
CN102593303A CN2011100011553A CN201110001155A CN102593303A CN 102593303 A CN102593303 A CN 102593303A CN 2011100011553 A CN2011100011553 A CN 2011100011553A CN 201110001155 A CN201110001155 A CN 201110001155A CN 102593303 A CN102593303 A CN 102593303A
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CN
China
Prior art keywords
light
luminescence unit
semiconductor layer
emitting diode
emitting
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Pending
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CN2011100011553A
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Chinese (zh)
Inventor
刘欣茂
谢明勋
洪盟渊
韩政男
李宗宪
许嘉良
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Epistar Corp
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Epistar Corp
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Priority to CN2011100011553A priority Critical patent/CN102593303A/en
Publication of CN102593303A publication Critical patent/CN102593303A/en
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Abstract

The invention discloses a light-emitting element with embolisms, which comprises a light-emitting unit, a structural body and a plurality of embolisms, wherein the light-emitting unit is of a laminate structure, and has a first semiconductor layer, a light-emitting layer and a second semiconductor layer, and the structural body and the light-emitting unit are stacked; the structural body at least comprises light-emitting diodes, and the embolisms can be electrically connected with the light-emitting unit and the structural body; and at least one embolism penetrates through the light-emitting unit.

Description

Light-emitting component with embolism
Technical field
The present invention mainly relates to solid-state light emitting element, and this solid-state light emitting element can be the solid state light emitter that common light-emitting diode, laser etc. utilize the semi-conducting material manufacturing to form.
Background technology
The application of solid-state light emitting element improves gradually, and more and more people use the solid-state light emitting element that can save energy in each different field.And in order to increase its function, also can see through the outside line ways of connecting light-emitting component and other element are done further electrically connect, to reach the effect of integration.Yet, see through outside line binding regular meeting and cause broken string or loose contact because of the problem of relative position between light-emitting component and other elements or difference of height.In addition, when needs make up different elements with stack manner, also can't be with outside line connection serial connection.Therefore, how to be a problem of desiring most ardently solution more effectively with solid-state light emitting element and other element electrically connect.
Summary of the invention
The present invention mainly is about light-emitting component, and it comprises luminescence unit, structure and a plurality of embolism.Wherein luminescence unit is laminated construction and has first semiconductor layer, luminescent layer and second semiconductor layer.Have at least in a plurality of embolisms an embolism run through structure and with the luminescence unit electrical ties; Have at least again an embolism run through this luminescence unit and with the luminescence unit electrical ties.Wherein, structure can comprise substrate or a plurality of light-emitting diode.See through the electrical ties of embolism, luminescence unit and structure are combined into integrated element.
Description of drawings
Fig. 1 is shown as the embodiment of the invention;
Fig. 2 is the enlarged drawing of embolism;
The different embodiment that Fig. 3～Fig. 8 represents the present invention respectively and disclosed;
Description of reference numerals
100: luminescence unit
101: the first semiconductor layers
102: the second semiconductor layers
103: luminescent layer
104,104a-b: first electrode
200a～d: embolism
210: insulation wall
220: conductive layer
300: structure
310a～b: light-emitting diode
304,304a-d: second electrode
400: insulating barrier
Embodiment
Its structure of embodiment of the present invention is as shown in Figure 1; Light-emitting component 10 comprises luminescence unit 100; This luminescence unit 100 is a laminated construction; Comprise first semiconductor layer 101, second semiconductor layer 102 and luminescent layer 103, wherein luminescent layer 103 is between first semiconductor layer 101 and second semiconductor layer 102; Luminescence unit 100 also comprises a plurality of first electrode 104a～104b.In addition, light-emitting component 10 also further comprises structure 300 and a plurality of embolism 200.In the present embodiment, have at least an embolism 200a to run through the part lamination (being first semiconductor layer 101 in this embodiment) and the structure 300 of luminescence unit 100 in a plurality of embolisms 200, and with the first electrode 104a electrical ties.And have at least in a plurality of embolisms 200 an embolism 200b run through luminescence unit 100 and structure 300 and with the first electrode 104b electrical ties.See through a plurality of embolisms 200, luminescence unit 100 can with a plurality of second electrode, 304 electrical ties on the surface 302 of structure 300.When electric current during via second electrode 304 or the first electrode 104a, 104b input, luminescence unit 100 will be shinny.
First semiconductor layer 101, second semiconductor layer 102 and the luminescent layer 103 of luminescence unit 100, its other main composition material can be by being made up of single-element, and for example silicon, germanium etc. have the element of semiconductor energy gap (energy gap); Also can serve as reasons more than one element material is formed, and comprises the compound that the III group-III nitride is formed, and its composition can chemical formula Al xGa yIn zN 1-aM aExpression (wherein x+y+z=1, and 0≤x≤1; 0≤y≤1; 0≤z≤1), the V group element (wherein 0≤a≤1) beyond M representes to denitrogenate.The combination of these more than one element material also can be by Al xGa yAs forms (wherein x+y=1, and 0≤x≤1; 0≤y≤1; Or Al 0≤z≤1), xGa yIn zP (wherein x+y+z=1, and 0≤x≤1; 0≤y≤1; 0≤z≤1).In various embodiments of the present invention; First semiconductor layer 101 and second semiconductor layer 102 are represented respectively and are positioned at not two semiconductor layers of homonymy of luminescent layer 103; First and second just represents the doping with opposed polarity at this, and the composition material of its semiconductor layer can be identical or different each other.For example, when first semiconductor layer 101 was the p N-type semiconductor N, 102 of second semiconductor layers were the n N-type semiconductor N, and vice versa.The principal character of luminescence unit 100 is that when having voltage difference between first semiconductor layer 101 and second semiconductor layer 102, luminescent layer 103 can send has the interval light of specific wavelength.What this will propose especially be in addition, mentioned " light-emitting diode " speech in the various embodiments of the present invention, if in each embodiment, do not add description in addition, then its to form structure identical with the content of material and foregoing description luminescence unit 100.If in each embodiment, add definition in addition, then the definition with this embodiment is as the criterion.
The structural profile of embolism 200 is as shown in Figure 2, has insulation wall 210 and conductive layer 220.Wherein insulation wall 210 mainly is semiconductor layer or the luminescent layer that is used for intercepting conductive layer 220 and luminescence unit, when avoiding electric current to pass through conductive layer 220, luminescence unit is produced disturb.In various embodiments of the present invention; Mentioned embolism 200 its production methods have many diverse ways; Main step is to pass through part in embolism 200 desires; Etching, the machinery method such as give a farfetched interpretation that sees through forms hole; Again insulating material is covered the sidewall of hole, then can see through like modes such as PVD (physicalvapor deposition), sputter, electron beam (E-Beam), plating electric conducting material is filled among the hole like the thin-film technique in the semiconductor technology such as PECVD (plasma enhanced chemical vapor deposition), HDPCVD (high density plasma enhanced chemical vapor deposition), spin coating modes such as (spincoating).
Structure 300 in the light-emitting component 10 can be substrate.In various embodiments of the present invention, described substrate one speech can be the growth substrate of luminescence unit 100 or the support plate that is used for carrying.When structure 300 was the growth substrate of luminescence unit 100, its material can be sapphire (sapphire), carborundum (SiC); Silicon (silicon), metal oxide is aluminium oxide (aluminum oxide) for example, zinc oxide (zincoxide); Magnesia (magnesium oxide); Manganese oxide (manganese oxide), zirconia (zirconiumoxide), magnesium zinc iron (manganese zinc iron oxide); Magnesium aluminium oxide (magnesiumaluminum oxide), aluminium nitride (aluminum nitride) etc.When structure 300 is the bearing substrate of luminescence unit 100; Its material can be high molecular polymer (polymer); Metal, alloy, Metal Substrate composite wood (metal matrix composite); Ceramic base composite wood (ceramic matrix composite), high molecular polymer composite wood (polymer matrix composite)., structure 300 can be printed circuit board (PCB) (PCB) again when being the bearing substrate of luminescence unit 100.
Fig. 3 representes another embodiment of the present invention; In this embodiment; Light-emitting component 20 comprises luminescence unit 100; This luminescence unit 100 comprises first semiconductor layer 101, second semiconductor layer 102, luminescent layer 103 and a plurality of first electrode 104, and wherein luminescent layer 103 is between first semiconductor layer 101 and second semiconductor layer 102.In the present embodiment, luminescence unit 100 is rectilinear light-emitting diode, but in other embodiments of the invention, also can be the light-emitting diode of horizontal.Light-emitting component 20 further comprises structure 300 and a plurality of embolism 200.In the present embodiment, structure 300 is that led stack is on luminescence unit 100.Have at least in a plurality of embolisms 200 an embolism 200a run through structure 300 and with structure 300 on the pairing second electrode 304a electrical ties.Have at least an embolism 200b to run through luminescence unit 100 in a plurality of embolisms 200, and with structure 300 on the second electrode 304b electrical ties.See through a plurality of embolisms 200, luminescence unit 100 can form electrical ties with structure 300.In the present embodiment, when electric current was imported via second electrode 304 or first electrode 104, luminescence unit 100 was simultaneously shinny with structure 300.Present embodiment can add insulating barrier 400 again between luminescence unit 100 and structure 300.The purpose of insulating barrier 400 is for ability electrical isolation luminescence unit 100 and structure 300, to avoid producing between the semiconductor layer each other the phenomenon of short circuit.The material of insulating barrier 400 can comprise high dielectric organic material, siliceous oxide or siliceous nitride etc.
Fig. 4 is further embodiment of this invention; Structure 300 in the light-emitting component 30 comprises light- emitting diode 310a and 310b, and in the present embodiment, light- emitting diode 310a and 310b are rectilinear light-emitting diode; But also can be in other embodiments of the invention, the light-emitting diode of horizontal.Light- emitting diode 310a and 310b are stacked on the heteropleural mutually of luminescence unit 100 respectively.Structure 300 comprises a plurality of second electrode 304a～304d again.Light-emitting component 30 has a plurality of embolisms 200 again, comprises embolism 200a and embolism 200b.Luminescence unit 100 sees through embolism 200a and the second electrode 304a of light-emitting diode 310a and the second electrode 304b electrical ties of light-emitting diode 310b.Luminescence unit 100 sees through embolism 200b and the second electrode 304d of light-emitting diode 310a and the second electrode 304c electrical ties of light-emitting diode 310b.The a plurality of embolisms 200 that see through in the light-emitting component 30 can be with luminescence unit 100 and structure 300 electrical ties; Therefore; When electric current imported light-emitting components 30 via first electrode 104 of second electrode 304a～304d of structure 300 or luminescence unit 100, luminescence unit 100 can emit beam with light-emitting diode 310a and light-emitting diode 310b in the structure 300 simultaneously.Between luminescence unit 100 and light-emitting diode 310a and the 310b, also can add insulating barrier 400.The purpose of insulating barrier 400 is for ability electrical isolation luminescence unit 100 and structure 300, to avoid producing short circuit between the semiconductor layer.
In this embodiment; Luminescence unit 100 can send the light with first wave-length coverage; Light-emitting diode 310a in the structure 300 and light-emitting diode 310b can send respectively and different second wave-length coverage of first wave-length coverage and the light of wavelength range; The light of these three kinds of wave-length coverages can be launched the light of the 4th wave-length coverage after mixing.Particularly; When drive current imports in the light-emitting component 30; Luminescence unit 100 can send wave-length coverage approximately between the blue light of 440～480nm; Light-emitting diode 310a in the structure 300 sends wave-length coverage approximately between the green glow of 500～560nm, and light-emitting diode 310b sends wave-length coverage approximately between the ruddiness of 600～650nm.After three kinds of light mix, can produce white light.
Fig. 5 A representes another embodiment of the present invention, and Fig. 5 B is the profile along AA ' line.Light-emitting component 40 has luminescence unit 100, structure 300 and a plurality of embolism 200a～200b.Between luminescence unit 100 and the structure 300, can add insulating barrier 400.Luminescence unit 100 is a laminated construction, comprises first semiconductor layer 101, luminescent layer 103, second semiconductor layer 102 and a plurality of first electrode 104.Structure 300 is a light-emitting diode in the present embodiment, particularly, is the light-emitting diode of horizontal, but in other embodiments of the invention, also can be rectilinear light-emitting diode.Structure 300 further comprises a plurality of second electrodes 304.Embolism 200a runs through luminescence unit 100 and further extends and pairing second electrode, 304 electrical ties, embolism 200b run through luminescence unit 100 the part lamination and with second electrode, 304 electrical ties of pairing structure 300.Therefore, when electric current imported light-emitting components 40 via first electrode 104 of second electrode 304 of structure 300 or luminescence unit 100, luminescence unit 100 can emit beam with structure 300 simultaneously.
Fig. 6 representes another embodiment of the present invention, light-emitting component 50 have with Fig. 5 in the similar structure of light-emitting component 40, but further, structure 300 can comprise at least two light- emitting diode 310a and 310b and a plurality of second electrode 304a～304d.Light-emitting component 50 has a plurality of embolism 200a～200d again.Embolism 200a runs through luminescence unit 100 and further extends with light-emitting diode 310a and go up the pairing second electrode 304a electrical ties; Embolism 200b runs through the part lamination of luminescence unit 100 and goes up the pairing second electrode 304c electrical ties with light-emitting diode 310a; Embolism 200c run through luminescence unit 100, light-emitting diode 310a and light-emitting diode 310b and with the second electrode 304b electrical ties, embolism 200d runs through part lamination and the light-emitting diode 310a of luminescence unit 100 and further extends with light-emitting diode 310b and go up the pairing second electrode 304d electrical ties.A plurality of embolisms 200 and with luminescence unit 100 on a plurality of first electrode, 104 electrical ties.When electric current got into light-emitting components 50 via first electrode 104 of second electrode 304a～304d of structure 300 or luminescence unit 100, luminescence unit 100 can emit beam with light-emitting diode 310a and light-emitting diode 310b in the structure 300 simultaneously.Between luminescence unit 100 and light-emitting diode 310a, light-emitting diode 310a and the light-emitting diode 310b, also can add insulating barrier 400.The purpose of insulating barrier 400 is for ability electrical isolation luminescence unit 100 and structure 300, to avoid producing short circuit between the semiconductor layer.
In this embodiment; Luminescence unit 100 can send the light with first wave-length coverage; Light-emitting diode 310a in the structure 300 and light-emitting diode 310b can send respectively and different second wave-length coverage of first wave-length coverage and the light of wavelength range; The light of these three kinds of wave-length coverages can be launched the light of the 4th wave-length coverage after mixing.For example; But the present invention is not limited to; When drive current imports in the light-emitting component 30; Luminescence unit 100 can send wave-length coverage approximately between the blue light of 440～480nm, and the light-emitting diode 310a in the structure 300 sends wave-length coverage approximately between the green glow of 500～560nm, and light-emitting diode 310b sends wave-length coverage approximately between the ruddiness of 600～650nm.After three kinds of light mix, can produce white light.
Fig. 7 is further embodiment of this invention, and light-emitting component 60 has luminescence unit 100, structure 300, and a plurality of embolism 200.Between luminescence unit 100 and the structure 300, can add insulating barrier 400, to avoid between semiconductor layer, producing short circuit.Luminescence unit 100 is for laminated construction comprises, first semiconductor layer 101, luminescent layer 103, second semiconductor layer 102 and a plurality of first electrode 104.Structure 300 comprises at least two light- emitting diode 310a and 310b, and structure 300 further comprises a plurality of second electrode 304a～304d.A plurality of embolisms comprise embolism 200a, embolism 200b and embolism 200c.Embolism 200a runs through the second electrode 304a electrical ties on luminescence unit 100 and further extension and the light-emitting diode 310a.The first electrode 104b electrical ties of embolism 200b and luminescence unit 100 and run through light-emitting diode 310a and with light-emitting diode 310a on the second electrode 304d electrical ties.Further, embolism 200b runs through light-emitting diode 310b and goes up the pairing second electrode 304c electrical ties with light-emitting diode 310b.Embolism 200c runs through luminescence unit 100 and further extends and run through light-emitting diode 310a, and with light-emitting diode 310b on the second electrode 304b electrical ties.Because a plurality of embolism 200a～200c simultaneously with luminescence unit 100 on a plurality of first electrode, 104 electrical ties; Therefore when electric current imports light-emitting components 60 via first electrode 104 of second electrode 304a～304d of structure or luminescence unit 100, luminescence unit 100 can emit beam with light-emitting diode 310a and light-emitting diode 310b in the structure 300 simultaneously.Between light-emitting diode 310a and the light-emitting diode 310b, also can add insulating barrier 400.The purpose of insulating barrier 400 is for ability electrical isolation luminescence unit 100 and structure 300, to avoid producing short circuit between the semiconductor layer.
In this embodiment; Luminescence unit 100 can send the light with first wave-length coverage; Light-emitting diode 310a in the structure 300 and light-emitting diode 310b can send respectively and different second wave-length coverage of first wave-length coverage and the light of wavelength range; The light of these three kinds of wave-length coverages can be launched the light of the 4th wave-length coverage after mixing.For example; But the present invention is not limited to; When drive current imports in the light-emitting component 30; Luminescence unit 100 can send wave-length coverage approximately between the blue light of 440～480nm, and the light-emitting diode 310a in the structure 300 sends wave-length coverage approximately between the green glow of 500～560nm, and light-emitting diode 310b sends wave-length coverage approximately between the ruddiness of 600～650nm.After three kinds of light mix, can produce white light.
In addition, the structure 300 that Fig. 3 is comprised to each embodiment shown in Figure 7 can further comprise substrate 320 again, and embodiment 70 as shown in Figure 8 is embodiment shown in Figure 7 60 is further comprised substrate 320.Above-mentioned embolism 200a～200d further runs through substrate 320 after running through each light-emitting diode, and with second electrode, 304 electrical ties of substrate 320 bottoms.And electric current can be lighted each light-emitting diode and luminescence unit 100 in the structure 300 with embolism 200 simultaneously through second electrode 304 of substrate 320 bottoms.
In addition; Structure 300 also can be Schottky diode (Schottky diode), Zener diode (Zener diode), integrated circuit component (Integrated Circuit), printed circuit board (PCB) or its combination except can be substrate described in above-mentioned each embodiment or light-emitting diode.
Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit scope of the present invention only.Anyone was to the present invention did any showing and be prone to the modification of knowing or change neither disengaging spirit of the present invention and scope.

Claims (10)

1. light-emitting component comprises:
Luminescence unit comprises first semiconductor layer, luminescent layer and second semiconductor layer, and wherein this luminescent layer is between this first semiconductor layer and this second semiconductor layer;
Structure comprises light-emitting diode, and wherein this structure and this luminescence unit pile up; And
A plurality of embolisms in order to this luminescence unit of electrical ties and this structure, wherein have at least an embolism to run through this luminescence unit in these a plurality of embolisms.
2. light-emitting component as claimed in claim 1 wherein has at least an embolism to pass this part or all of structure in these a plurality of embolisms.
3. according to claim 1 or claim 2 light-emitting component, wherein this structure comprises substrate; And/or a plurality of light-emitting diodes; And/or Schottky diode, Zener diode, integrated circuit component, printed circuit board (PCB) or its combination.
4. according to claim 1 or claim 2 light-emitting component, wherein this luminescence unit comprises a plurality of first electrodes.
5. light-emitting component as claimed in claim 3, wherein this light-emitting diode can be the structure of rectilinear or horizontal.
6. light-emitting component as claimed in claim 5 also comprises insulating barrier, and this insulating barrier is between this luminescence unit and this structure.
7. light-emitting component as claimed in claim 6, wherein this insulating layer material can be high dielectric organic material, siliceous oxide or siliceous nitride.
8. light-emitting component comprises:
Luminescence unit comprises first semiconductor layer, luminescent layer and second semiconductor layer, and wherein this luminescent layer is between this first semiconductor layer and this second semiconductor layer;
Structure comprises a plurality of construction units, and wherein this luminescence unit is between these a plurality of construction units; And
A plurality of embolisms in order to this luminescence unit of electrical ties and these a plurality of construction units, wherein have at least an embolism to run through this luminescence unit in these a plurality of embolisms.
9. light-emitting component as claimed in claim 8, wherein these a plurality of construction units comprise light-emitting diode, Schottky diode, Zener diode, integrated circuit component, printed circuit board (PCB) or its combination.
10. light-emitting component as claimed in claim 8, wherein this luminescence unit can send the light with first wave-length coverage;
These a plurality of construction units comprise first light-emitting diode that can send the light with second wave-length coverage and second light-emitting diode that can send the light with wavelength range at least;
The light of these three kinds of wave-length coverages can be mixed into white light.
CN2011100011553A 2011-01-05 2011-01-05 Light-emitting element with embolisms Pending CN102593303A (en)

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Application publication date: 20120718