CN102591738B - The data management method, the memory controller with embedded memory storage means - Google Patents

The data management method, the memory controller with embedded memory storage means Download PDF

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CN102591738B
CN102591738B CN 201110002442 CN201110002442A CN102591738B CN 102591738 B CN102591738 B CN 102591738B CN 201110002442 CN201110002442 CN 201110002442 CN 201110002442 A CN201110002442 A CN 201110002442A CN 102591738 B CN102591738 B CN 102591738B
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潘健成
杨俊勇
黄金汉
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群联电子股份有限公司
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Abstract

本发明是提出一种数据管理方法、存储器控制器与嵌入式存储器储存装置,此嵌入式存储器储存装置具有多个物理区块且每一物理区块具有多个快速物理页面与多个慢速物理页面。 The present invention is to provide a data management method, the memory controller with embedded memory storage device, the embedded memory device having a plurality of physical storage blocks and each block having a plurality of physical pages and a plurality of Fast Physical slow physical page. 本方法包括检测状态标示单元的状态。 The method includes detecting a state of the state of the marking unit. 本方法还包括当状态标示单元的状态被标记为第一状态时,自动地读取所储存的数据,使用嵌入式存储器储存装置快速物理页面与慢速物理页面来重新储存此数据并且将状态标示单元的状态标记为第二状态。 The method also includes marking means when the state flag state is the first state, automatically read the stored data, the use of embedded flash memory storage device and slow physical page physical page and to store this data will be re-marked state of state of the cell is marked as the second state. 基此,可有效地使用嵌入式存储器储存装置的储存空间。 This group, the storage space can be used effectively embedded memory storage device.

Description

数据管理方法、存储器控制器与嵌入式存储器储存装置 The data management method, the memory controller with embedded memory storage means

技术领域 FIELD

[0001] 本发明是有关于一种数据管理方法,且特别是有关于一种用于嵌入式存储器储存装置的数据管理方法及使用此方法的存储器控制器与嵌入式存储器储存装置。 [0001] The present invention relates to a data management method, and more particularly relates to a data management method for embedded memory storage device and method of using this embedded memory controller and the memory storage device.

背景技术 Background technique

[0002] 数字相机、手机与MP3在这几年来的成长十分迅速,使得消费者对储存媒体的需求也急速增加。 [0002] digital cameras, mobile phones and MP3 growing very rapidly in the past few years, making the consumer demand for storage media is also rapidly increasing. 由于可复写式非易失性存储器(rewritablenon-volatile memory)具有数据非易失性、省电、体积小、无机械结构、读写速度快等特性,最适于此些电子产品。 Since the rewritable nonvolatile memory (rewritablenon-volatile memory) having a non-volatile, low power, small size, no mechanical structure, characteristics such as data read and write speed, this optimum these electronic products. 广泛用于手机的嵌入式多媒体卡(embeded Multi Media Card,eMMC)就是一种以闪存作为储存媒体的储存装置。 Widely used in mobile phones embedded multimedia card (embeded Multi Media Card, eMMC) is a kind of flash memory as a storage device for storing media. 因此,近年闪存产业成为电子产业中相当热门的一环。 Therefore, in recent years, flash memory industry has become very popular in the electronics industry a ring.

[0003] 一般来说,用于电子产品的嵌入式多媒体卡(embeded Multi Media Card,eMMC)是用于烧录电子产品的映象文件(image file),例如,操作系统。 [0003] In general, embedded multimedia card (embeded Multi Media Card, eMMC) used in electronic products, electronic products for burning image file (image file), for example, the operating system. 特别是,为了便于大量生产,映象文件会预先烧录到嵌入式多媒体卡制造中,之后预存有映象文件的嵌入式多媒体卡才会焊接至电子产品的电路基板上。 In particular, in order to facilitate mass production, the image file is pre-programmed to manufacture an embedded multimedia card, after which pre-stored image file embedded multimedia card will be soldered to a circuit board of electronic products.

[0004] 在闪存模块中,数据是根据存储单元内所储存的电荷来识别。 [0004] In the flash memory module, the data are identified according to the charge stored in the storage unit. 然而,在某些对存储器较特殊的环境下,例如焊接时,其高温会对存储单元内所储存的电荷造成影响(例如,漏电)。 However, under certain rather special circumstances the memory, for example during welding, the high temperature electric charge stored in the storage unit will affect (e.g., drain). 因此,预存于嵌入式多媒体卡的数据可能会因此而发生错误。 Therefore, stored in an embedded multimedia card data may therefore error.

发明内容 SUMMARY

[0005] 本发明提供一种数据管理方法、存储器控制器与嵌入式存储器储存装置,其能够重新储存数据,以有效地使用嵌入式存储器储存装置的储存空间。 [0005] The present invention provides a data management method, the memory controller with embedded memory storage device capable of storing data again, to efficiently use the storage space of the embedded memory storage device.

[0006] 本发明提供一种数据管理方法,其能够避免因焊接而遗失预存于嵌入式存储器储存装置的数据。 [0006] The present invention provides a data management method, it is possible to avoid the storage device stored in the embedded memory and data lost due to welding.

[0007] 本发明提供一种存储器控制器与嵌入式存储器储存装置,其所执行的写入机制能够防止预存于嵌入式存储器储存装置的数据遗失。 [0007] The present invention provides a memory controller with embedded memory storage device, it performs the write mechanism is possible to prevent the memory stored in the storage device embedded data loss.

[0008] 本发明提供一种用于嵌入式存储器储存装置的数据管理方法,其中此嵌入式存储器储存装置具有多个物理区块并且每一物理区块具有多个快速物理页面与多个慢速物理页面。 [0008] The present invention provides a data management method for embedded memory storage device, wherein this embedded memory storage means having a plurality of physical blocks and physical blocks each having a plurality of physical pages and a plurality of Fast Slow physical page. 本数据管理方法包括检测一状态标示单元的一状态,其中当仅快速物理页面被用来储存一数据时,此状态标示单元的状态被标记为第一状态,并且当此些快速物理页面与慢速物理页面皆被用来储存数据时,状态标示单元的状态被标记为第二状态。 The data management method includes detecting a state of a state of the marking unit, wherein when only the fast physical page is used to store a data state of the cell this state is designated as a first state, and when a physical page of such fast and slow when speed physical page are used to store data, the state labeled state of the cell is marked as the second state. 本数据管理方法还包括当状态标示单元的状态被标记为第一状态时,自动地读取所储存的数据,使用此些快速物理页面与慢速物理页面来重新储存此数据并且将状态标示单元的状态标记为第二状态。 The data management method further comprises the marking unit when the state flag state is the first state, automatically read the stored data, the use of such fast and slow physical page physical page to re-store this data unit and the state labeled status flag to the second state.

[0009] 在本发明的一实施例中,上述的数据管理方法,还包括:从主机系统接收至少一标准指令;判断此标准指令是否属于一特殊态样;以及仅当此标准指令属于特殊态样时,才检测上述状态标示单元的状态。 [0009] In an embodiment of the present invention, the above-mentioned data management method further comprising: receiving at least one standard instruction from a host system; Analyzing this standard instruction belongs to a particular aspect; and only if this standard instruction is a special state when the sample only detects the state of the designated state of the cell.

[0010] 在本发明的一实施例中,上述的同时使用至少部分快速物理页面与慢速物理页面来重新储存上述数据的步骤包括:通过执行来自于主机系统的多个写入指令来同时使用至少部分快速物理页面与慢速物理页面来重新储存上述数据。 Step [0010] In an embodiment of the present invention, at least in part while using the above-described fast and slow physical page physical page for re-storing the data comprises: a plurality of write commands from the host system through the use of simultaneous execution at least partially fast and slow physical page physical page re-storing the data.

[0011] 本发明范例实施例提出一种存储器控制器,用于配置在嵌入式存储器储存装置中以管理此嵌入式存储器储存装置的可复写式非易失性存储器模块,其中此可复写式非易失性存储器模块具有多个物理区块并且每一物理区块具有多个快速物理页面与多个慢速物理页面。 [0011] exemplary embodiment of the present invention provides a memory controller for a memory in an embedded storage means arranged to manage the embedded rewritable nonvolatile memory module memory storage device, wherein this non-rewritable volatile memory module having a plurality of physical blocks and physical blocks each having a plurality of physical pages fast and slow plurality of physical pages. 本存储器控制器包括主机接口、存储器接口与存储器管理电路。 This memory controller includes a host interface, a memory interface and memory management circuitry. 主机接口用以耦接至一主机系统。 A host interface for coupling to a host system. 存储器接口用以耦接至此可复写式非易失性存储器模块。 The memory interface for coupling to this rewritable nonvolatile memory module. 存储器管理电路耦接至此主机接口与存储器接口。 Memory management circuitry is coupled to the host interface and the memory interface point. 在此,此存储器管理电路用以检测状态标示单元的状态,其中当仅此些快速物理页面被用来储存一数据时,此状态标示单元的该状态被标记为一第一状态。 Here, the memory management circuitry for detecting the marking state of the cell state, wherein only when a physical page of such flash is used to store a data, the status of the designated state of the cell is marked as a first state. 此外,其中当状态标示单元的状态被标记为第一状态时,存储器管理电路自动地读取所储存的数据,使用此些快速物理页面与慢速物理页面来重新储存此数据并且将状态标示单元的状态标记为第二状态。 In addition, when the state in which the state of the cell is designated as a first state, memory management circuitry automatically read the stored data, the use of such fast and slow physical page physical page to re-store this data unit and the state labeled status flag to the second state.

[0012] 在本发明的一实施例中,上述的存储器管理电路从主机系统接收至少一标准指令并且判断此标准指令是否属于一特殊态样。 [0012] In an embodiment of the present invention, the above-described memory management circuitry receives at least one standard instruction from the host system and determines whether the instruction belongs to this standard a special aspect. 并且,仅当此标准指令属于此特殊态样时,上述的存储器管理电路才检测上述状态标示单元的状态。 And, only when this standard instructions belong to this particular aspect, the above-described memory management circuitry detects the state before the state of the cell label.

[0013] 在本发明的一实施例中,上述的存储器管理电路通过执行来自于主机系统的多个写入指令来同时使用至少部分快速物理页面与慢速物理页面来重新储存上述数据。 [0013] In an embodiment of the present invention, the above-described memory management circuitry by performing a plurality of host systems from simultaneously writing command using at least part of the fast and slow physical page physical page for re-storing the data.

[0014] 本发明范例实施例提出一种嵌入式存储器储存装置,其包括连接器、可复写式非易失性存储器模块与存储器控制器。 [0014] exemplary embodiment of the present invention provides a embedded memory storage device, which includes a connector, a nonvolatile rewritable memory module and the memory controller. 连接器用以耦接至主机系统。 The connector for coupling to the host system. 可复写式非易失性存储器模块具有多个物理区块并且每一物理区块具有多个快速物理页面与慢速物理页面。 Rewritable nonvolatile memory module having a plurality of physical blocks and physical blocks each having a plurality of fast and slow physical page physical page. 存储器控制器耦接至此连接器与可复写式非易失性存储器模块。 The memory controller is coupled to this connector and rewritable nonvolatile memory module. 在此,存储器控制器用以检测状态标示单元的状态,其中当仅此些快速物理页面被用来储存一数据时,此状态标示单元的该状态被标记为一第一状态。 Here, the memory controller for detecting the state of the cell designated state, wherein only when a physical page of such flash is used to store a data, the status of the designated state of the cell is marked as a first state. 此外,其中当状态标示单元的状态被标记为第一状态时,存储器控制器自动地读取所储存的数据,使用此些快速物理页面与慢速物理页面来重新储存此数据并且将状态标示单元的状态标记为第二状态。 In addition, when the state in which the state of the cell is designated as a first state, the memory controller automatically read the stored data, the use of such fast and slow physical page physical page to re-store this data unit and the state labeled status flag to the second state.

[0015] 在本发明的一实施例中,上述的存储器控制器从主机系统接收至少一标准指令并且判断此标准指令是否属于一特殊态样。 [0015] In an embodiment of the present invention, the above-described memory controller receives the at least one standard instruction from the host system and determines whether the instruction belongs to this standard a special aspect. 并且,仅当此标准指令属于此特殊态样时,上述的存储器控制器才检测上述状态标示单元的状态。 And, only when this standard instructions belong to this particular aspect, the above-described memory controller detects the state before the state of the cell label.

[0016] 在本发明的一实施例中,上述的存储器控制器通过执行来自于主机系统的多个写入指令来同时使用至少部分快速物理页面与慢速物理页面来重新储存上述数据。 [0016] In an embodiment of the present invention, the above-described memory controller by performing multiple write instruction from the host system to use at least part of the fast and slow physical page physical page for re-storing the data.

[0017] 本发明范例实施例提出一种数据管理方法,其用于防止在一嵌入式存储器储存装置中的一预定数据遗失,其中此嵌入式存储器储存装置具有多个物理区块并且每一物理区块具有多个快速物理页面与多个慢速物理页面。 [0017] exemplary embodiment of the present invention provides a data management method for preventing a data in a predetermined storage device in the embedded memory loss, wherein this embedded memory device having a plurality of physical storage blocks and each physical blocks having a plurality of physical pages and more rapid slow physical page. 本防止数据遗失方法包括:烧录步骤与重新储存步骤。 This prevents data loss method comprising: a step of re-programming storage step. 烧录步骤用以仅使用嵌入式存储器储存装置的快速物理页面来储存此预定数据并且将状态标示单元的状态标记为第一状态,其中此状态标示单元是储存在嵌入式存储器储存装置中。 Quick step to burn only the physical page embedded memory storage device to store predetermined data and the state of this state of the cell designated as a first state, wherein this state is stored in the marking unit embedded memory storage device. 重新储存步骤用以使用嵌入式存储器储存装置的快速物理页面与慢速物理页面来重新储存此预定数据并且将状态标示单元的状态标记为第二状态。 Re-storing step and slow to fast physical page physical page using an embedded memory storage device to re-store this data and a predetermined state designated state of the cell is marked as the second state.

[0018] 在本发明的一实施例中,上述的数据管理方法还包括:将状态标示单元的状态初始地标记为初始状态;判断是否从主机系统接收到预定制造商指令;判断此状态标示单元的状态是否为初始状态;以及仅当接收到预定制造商指令并且此状态标示单元的状态为初始状态时,才执行上述烧录步骤。 [0018] In an embodiment of the present invention, the above-mentioned data management method further comprising: the state labeled state of the cell is initially marked as an initial state; determines whether it has received from the host system to a predetermined manufacturer instructions; Analyzing this state marking unit whether a state is the initial state; and only when receiving a predetermined command for the manufacturer and this state is designated as the initial state of the cell state, before executing the programming steps.

[0019] 在本发明的一实施例中,上述的数据管理方法还包括:判断是否从主机系统接收到预定制造商指令;判断状态标示单元的状态是否为第一状态;以及仅当接收到预定制造商指令并且状态标示单元的状态为第一状态时,才执行上述重新储存步骤。 [0019] In an embodiment of the present invention, the above-mentioned data management method further comprises: determining whether the predetermined received from the host system to the manufacturer instructions; determining whether the state is a first state of the cell marked state; and only when receiving a predetermined when the manufacturers instructions and the state is a first state of the state unit is designated, before re-executing the storing step.

[0020] 在本发明的一实施例中,上述的数据管理方法还包括:将状态标示单元的状态初始地标记为初始状态;从主机系统接收至少一标准指令;判断所接收的标准指令是否属于特殊态样;判断状态标示单元的状态是否为初始状态;以及仅当所接收的标准指令属于特殊态样并且状态标示单元的状态为初始状态时,才执行上述烧录步骤。 [0020] In an embodiment of the present invention, the above-mentioned data management method further comprising: the state labeled state of the cell is initially marked as an initial state; receiving at least one standard instruction from a host system; standard instruction determines whether the received belongs special aspects; state determining means whether the state designated initial state; and only when the received standard instruction is a special aspect of the state of the cell and the state designated as the initial state, before executing the programming steps.

[0021] 在本发明的一实施例中,上述的数据管理方法还包括:从主机系统接收至少一标准指令;判断所接收的标准指令是否属于特殊态样;判断状态标示单元的状态是否为第一状态;以及仅当所接收的标准指令属于特殊态样并且状态标示单元的状态为第一状态时,才执行上述重新储存步骤。 [0021] In an embodiment of the present invention, the above-mentioned data management method further comprises: receiving at least one standard instruction from a host system; standard instruction determines whether the received belongs to a special aspect; whether the state determines the state of the marking unit is a first a state; and only when the received standard instruction is a special aspect of the designated state and the state unit is a first state, before re-executing the storing step.

[0022] 在本发明的一实施例中,该重新储存步骤是通过执行来自于一主机系统的多个写入指令时执行,以将预定数据分批地重新储存至嵌入式存储器储存装置的快速物理页面与慢速物理页面中。 [0022] In an embodiment of the present invention, the storing step is performed again by executing a plurality of host system from a write command, to re-store the predetermined data in batches to the embedded flash memory storage means and slow physical page physical page.

[0023] 在本发明的一实施例中,上述的数据管理方法还包括:在上述烧录步骤与上述重新储存步骤之间,将嵌入式存储器储存装置以一焊接方式黏着至一电路基板上。 [0023] In an embodiment of the present invention, the above-mentioned data management method further comprises: between the step of the above-described re-programming storage step, the embedded memory storage device adhered onto a circuit substrate in a soldering manner.

[0024] 在本发明的一实施例中,上述的数据管理方法还包括:将此些物理区块至少分组为一储存区与一系统区,其中此状态标示单元被储存于此系统区的物理区块中。 [0024] In an embodiment of the present invention, the above-mentioned data management method further comprising: grouping at least some of this physical block is a storage area and a system area, wherein the marking unit is stored in this state in this region of the physical system block.

[0025] 本发明范例实施例提出一种存储器控制器,用于配置在嵌入式存储器储存装置中以管理此嵌入式存储器储存装置的可复写式非易失性存储器模块,其中此可复写式非易失性存储器模块具有多个物理区块并且每一物理区块具有多个快速物理页面与多个慢速物理页面。 [0025] exemplary embodiment of the present invention provides a memory controller for a memory in an embedded storage means arranged to manage the embedded rewritable nonvolatile memory module memory storage device, wherein this non-rewritable volatile memory module having a plurality of physical blocks and physical blocks each having a plurality of physical pages fast and slow plurality of physical pages. 本存储器控制器包括主机接口、存储器接口与存储器管理电路。 This memory controller includes a host interface, a memory interface and memory management circuitry. 主机接口用以耦接至一主机系统。 A host interface for coupling to a host system. 存储器接口用以耦接至此可复写式非易失性存储器模块。 The memory interface for coupling to this rewritable nonvolatile memory module. 存储器管理电路耦接至此主机接口与存储器接口。 Memory management circuitry is coupled to the host interface and the memory interface point. 在此,此存储器管理电路用以仅使用此些快速物理页面来储存一预定数据并且将状态标示单元的状态标记为一第一状态。 Here, the memory management circuitry for use of such rapid physical page only to store predetermined data and a status flag marking state of the cell is in a first state. 此外,存储器管理电路还用以使用此些快速物理页面与此些慢速物理页面来重新储存此预定数据并且将状态标示单元的该状态标记为第二状态。 Further, the memory management circuitry is further configured to use a physical page of such fast and slow physical page of such re-store predetermined data and this status flag marking unit that state to the second state. 再者,存储器管理电路将此状态标示单元是储存在可复写式非易失性存储器模块中。 Further, the memory management circuitry of this unit is stored in the state labeled rewritable nonvolatile memory module.

[0026] 在本发明的一实施例中,上述的存储器管理电路将状态标示单元的状态初始地标记为初始状态。 [0026] In an embodiment of the present invention, the above-described state of the memory management circuitry is initially marking unit marks the state of the initial state. 并且,仅当存储器管理电路从主机系统中接收到一预定制造商指令并且,上述状态标示单元的状态为初始状态时,存储器管理电路才仅使用此些快速物理页面来写入预定数据并且将状态标示单元的状态标记为该第一状态。 And, only when the memory management circuitry is received from the host system to a predetermined manufacturer instructions, and the state of the state unit is designated as the initial state, the memory management circuitry that they only Such rapid physical page to write the predetermined data and status marking unit marks the state of the first state.

[0027] 在本发明的一实施例中,仅当存储器管理电路从主机系统接收到一预定制造商指令并且上述状态标示单元的状态为第一状态时,上述的存储器管理电路才使用此些快速物理页面与慢速物理页面来重新储存该预定数据并且将此状态标示单元的状态标记为第二状态。 [0027] In an embodiment of the present invention, only when the memory management circuitry is received from a host system to the manufacturer instructions and said predetermined state is a first state of the cell designated state, the memory management circuitry is used only of such fast physical page and physical page slow re-storing the predetermined data unit and the state of this status flag designated as a second state.

[0028] 在本发明的一实施例中,上述的存储器管理电路将状态标示单元的状态初始地标记为初始状态。 [0028] In an embodiment of the present invention, the above-described state of the memory management circuitry is initially marking unit marks the state of the initial state. 并且,仅当存储器管理电路从主机系统接收属于特殊态样的至少一标准指令并且此状态标示单元的状态为初始状态时,存储器管理电路才仅使用此些快速物理页面来写入上述预定数据并且将状态标示单元的状态标记为第一状态。 And, only when the memory management circuit receiving at least one standard instruction is a special kind of state from a host system and this state is designated as the initial state of the state unit, memory management circuitry that they only Such rapid physical page to write the predetermined data, and the state of the status flag marking unit is a first state.

[0029] 在本发明的一实施例中,仅当存储器管理电路从主机系统接收属于特殊态样的至少一标准指令并且此状态标示单元的状态为第一状态时,上述的存储器管理电路才使用此些快速物理页面与慢速物理页面来重新储存上述预定数据并且将状态标示单元的状态标记为第二状态。 [0029] In an embodiment of the present invention, only when the at least one memory management circuitry receives the standard instruction is a special kind of state from a host system and this state is designated as a first state of the cell state, the memory management circuitry is used only Such fast and slow physical page physical page re-storing the data and the predetermined state designated state of the cell is marked as the second state.

[0030] 在本发明的一实施例中,上述的存储器管理电路于执行来自于主机系统的多个写入指令期间将预定数据分批地重新储存至此些快速物理页面与慢速物理页面中。 Write command during a plurality [0030] In an embodiment of the present invention, the above-described memory management circuitry to the host system from performing the predetermined data re-stored batches far more rapid and slow physical page physical page.

[0031] 在本发明的一实施例中,上述的存储器管理电路将此些物理区块至少分组为一储存区与一系统区,并且将上述状态标示单元储存于系统区的物理区块中。 [0031] In an embodiment of the present invention, the above-described memory management circuitry of this at least some packet a physical block storage area to a service area, and the above state is stored in a physical block unit marking system zone.

[0032] 本发明范例实施例提出一种嵌入式存储器储存装置,其包括连接器、可复写式非易失性存储器模块与存储器控制器。 [0032] exemplary embodiment of the present invention provides a embedded memory storage device, which includes a connector, a nonvolatile rewritable memory module and the memory controller. 连接器用以耦接至主机系统。 The connector for coupling to the host system. 可复写式非易失性存储器模块具有多个物理区块并且每一物理区块具有多个快速物理页面与慢速物理页面。 Rewritable nonvolatile memory module having a plurality of physical blocks and physical blocks each having a plurality of fast and slow physical page physical page. 存储器控制器耦接至此连接器与可复写式非易失性存储器模块。 The memory controller is coupled to this connector and rewritable nonvolatile memory module. 在此,存储器控制器用以仅使用此些快速物理页面来储存一预定数据并且将状态标示单元的状态标记为第一状态,其中存储器控制器将状态标示单元是储存在可复写式非易失性存储器模块中。 Here, the memory controller is configured using only a physical page of such flash to store data and a predetermined state designated state of the cell as a first state, in which state the memory marking unit controller is stored in non-volatile rewritable the memory module. 此外,存储器控制器还用以使用此些快速物理页面与慢速物理页面来重新储存此预定数据并且将状态标示单元的状态标记为第二状态。 Further, the memory controller is further configured to use of such fast and slow physical page physical page to re-store this data and a predetermined state designated state of the cell is marked as the second state.

[0033] 在本发明的一实施例中,上述的存储器控制器将状态标示单元的状态初始地标记为一初始状态。 [0033] In an embodiment of the present invention, the above-described state of the memory controller will initially marked state of the cell marked an initial state. 并且,其中仅当控制器从主机系统中接收到一预定制造商指令并且此状态标示单元的状态为初始状态时,存储器控制器才仅使用此些快速物理页面来写入上述预定数据并且将状态标示单元的状态标记为第一状态。 And, wherein only when the controller receives from the host system to a predetermined manufacturer instructions, and this state is designated an initial state of the cell state, the memory controller so that they only Such rapid physical page to write the predetermined data and status marking unit marks the state of the first state.

[0034] 在本发明的一实施例中,仅当存储器控制器从主机系统接收到一预定制造商指令并且此状态标示单元的状态为第一状态时,上述的存储器控制器才使用此些快速物理页面与慢速物理页面来重新储存上述预定数据并且将状态标示单元的状态标记为第二状态。 [0034] In an embodiment of the present invention, only when the memory controller receives from a host system to a predetermined manufacturer instructions, and this state is a first state of the cell designated state, the memory controller before use of such fast physical page and physical page slow re-storing the data and the predetermined state designated state of the cell is marked as the second state.

[0035] 在本发明的一实施例中,上述的存储器控制器将状态标示单元的状态初始地标记为初始状态。 [0035] In an embodiment of the present invention, the above-described state of the memory controller will initially marking unit marks the state of the initial state. 并且,仅当存储器控制器从主机系统接收属于特殊态样的至少一标准指令并且此状态标示单元的状态为初始状态时,上述的存储器控制器才仅使用此些快速物理页面来写入预定数据并且将此状态标示单元的状态标记为第一状态。 And, only when the at least one standard instruction is a special memory controller receives from the host system aspects and this state is designated as the initial state of the cell state, the memory controller so that they only Such rapid physical page to write the predetermined data and the state of this unit is designated as a first state flag state.

[0036] 在本发明的一实施例中,仅当存储器控制器从主机系统接收属于特殊态样的至少一标准指令并且此状态标示单元的状态为第一状态时,上述的存储器控制器才使用此些快速物理页面与慢速物理页面来重新储存上述预定数据并且将状态标示单元的状态标记为第二状态。 [0036] In an embodiment of the present invention, only when the at least one standard instruction is a special memory controller receives from the host system aspects and this state is designated as a first state of the cell state, the memory controller before use Such fast and slow physical page physical page re-storing the data and the predetermined state designated state of the cell is marked as the second state.

[0037] 在本发明的一实施例中,上述的存储器控制器于执行来自于主机系统的多个写入指令期间将上述预定数据分批地重新储存至此些快速物理页面与慢速物理页面中。 [0037] In an embodiment of the present invention, the memory controller to execute the above-described host system from a plurality of the above-mentioned predetermined data is re-stored batches far more rapid and slow physical page physical page address period command .

[0038] 在本发明的一实施例中,上述的存储器控制器将此些物理区块至少分组为一储存区与一系统区,并且将上述状态标示单元储存于系统区的物理区块中。 [0038] In an embodiment of the present invention, the above-mentioned physical blocks of the memory controller of this group of at least some of a system region and a storage region, and the above state is stored in a physical block unit marking system zone.

[0039] 基于上述,本发明范例实施例的方法、存储器控制器与嵌入式存储器储存装置能够有效地防止预存在可复写式非易失性存储器模块中的数据因焊接而遗失。 [0039] The method of the above-described embodiment, the present invention is based on the example, the memory controller with embedded memory storage device capable of effectively preventing the data stored in the rewritable non-volatile memory module by soldering lost.

[0040] 为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。 [0040] In order to make the above features and advantages of the present invention can be more fully understood, the following non-limiting embodiment, and the accompanying figures are described in detail below.

附图说明 BRIEF DESCRIPTION

[0041] 图1是根据本发明第一范例实施例所绘示的电子装置与嵌入式存储器储存装置。 [0041] FIG. 1 is an electronic device of the embodiment depicted embedded memory storage device according to a first exemplary embodiment of the present invention.

[0042] 图2是绘示图1所示的嵌入式存储器储存装置的概要方块图。 [0042] FIG. 2 is a schematic block diagram of an embedded memory storage apparatus shown in FIG. 1 shown in FIG.

[0043]图3是根据本发明第一范例实施例所绘示的物理区块的示意图。 [0043] FIG. 3 is a schematic diagram illustrating the physical block of the embodiment depicted in accordance with a first exemplary embodiment of the present invention.

[0044] 图4是根据本发明第一范例实施例所绘示的存储器控制器的概要方块图。 [0044] FIG. 4 is a diagram illustrating the memory controller depicted a schematic block diagram of a first exemplary embodiment according to the present invention.

[0045]图5是根据本发明第一范例实施例所绘示的以快速物理页面储存数据的范例示意图。 [0045] FIG. 5 is a schematic example of a fast physical page storing data depicted embodiment according to a first exemplary embodiment of the present invention.

[0046] 图6是根据本发明第一范例实施例所绘示的以快速物理页面与慢速物理页面储存数据的范例示意图。 [0046] FIG. 6 is a schematic view illustrating examples of fast to slow and the physical page physical page storing data according to a first exemplary embodiment of the present invention.

[0047] 图7是根据本发明第一范例实施例所绘示的数据管理方法的流程图。 [0047] FIG. 7 is a flowchart of a data management method according to a first embodiment depicted exemplary embodiment of the present invention.

[0048] 图8是根据本发明第二范例实施例所绘示的数据管理方法的流程图。 [0048] FIG 8 is a flowchart of a data management method according to a second embodiment depicted exemplary embodiment of the present invention.

[0049] 图9是根据本发明第三范例实施例所绘示的执行烧录步骤的流程图。 [0049] FIG. 9 is a flowchart of steps performed burn embodiment depicted according to a third exemplary embodiment of the present invention.

[0050] 图10是根据本发明第三范例实施例所绘示的于执行写入指令时将预定数据重新储存的流程图。 [0050] FIG. 10 is a flowchart of the write instruction stored predetermined data back to the embodiment depicted performed according to a third exemplary embodiment of the present invention.

[0051][主要元件标号说明] [0051] [Reference Numerals main elements]

[0052] 1000:电子装置 [0052] 1000: electronic device

[0053] 100:嵌入式存储器储存装置 [0053] 100: memory storage means embedded

[0054] 102:连接器 [0054] 102: connector

[0055] 104:存储器控制器 [0055] 104: memory controller

[0056] 106:可复写式非易失性存储器模块 [0056] 106: rewritable nonvolatile memory module

[0057] 202:存储器管理电路 [0057] 202: memory management circuitry

[0058] 204:主机接口 [0058] 204: Host Interface

[0059] 206:存储器接口 [0059] 206: Memory Interface

[0060] 208:错误校正电路 [0060] 208: the error correction circuit

[0061] 210:缓冲存储器 [0061] 210: buffer memory

[0062] 212:电源管理电路 [0062] 212: power management circuitry

[0063] 310:快速物理页面 [0063] 310: Fast Physical page

[0064] 320:慢速物理页面 [0064] 320: Slow physical page

[0065] 502,504:物理区块 [0065] 502, 504: the physical block

[0066] S701、S703、S705:数据管理的步骤 [0066] S701, S703, S705: step data management

[0067] S801、S803、S805、S809:数据管理的步骤 [0067] S801, S803, S805, S809: step data management

[0068] S901、S903、S905:烧录步骤 [0068] S901, S903, S905: programming step

[0069] S1001、S1003、S1005、S1007、S1009、SlOll:于执行写入指令时将预定数据重新储存的步骤 [0069] S1001, S1003, S1005, S1007, S1009, SlOll: write instruction to re-execute the predetermined data storing step

具体实施方式 Detailed ways

[0070] 本发明提出一种数据管理方法,其能够根据嵌入式存储器储存装置的储存状态来重新整理数据,藉此有效地使用嵌入式存储器储存装置的储存空间。 [0070] The present invention provides a data management method, which can be rearranged according to the data storage state embedded memory storage device, thereby efficiently use storage space embedded memory storage device. 此外,本发明的数据管理方法通过使用刻录机制将预定数据储存于较稳定的快速物理页面中并且之后再使用还原机制将预定数据重新储存于快速物理页面与慢速物理页面中,由此可避免储存于嵌入式存储器储存装置中的数据,因较特殊的环境,如焊接所产生的高温,而产生错误位。 Further, the data management method of the present invention by using a burning mechanism a predetermined data is stored in a more stable and rapid physical page restore mechanism reused after the predetermined data is re-stored in the physical page fast and slow physical page, whereby avoid data stored in the embedded memory storage device, because more specific environment, such as high temperature generated by the welding, and error bits. 以下将以数个范例实施例并配合图式来详细说明本发明。 The following Examples will be several exemplary embodiments and the drawings with the present invention will be described in detail.

[0071][第一范例实施例] [0071] [First exemplary embodiment]

[0072] 图1是根据本发明第一范例实施例所绘示的电子装置与嵌入式存储器储存装置。 [0072] FIG. 1 is an electronic device of the embodiment depicted embedded memory storage device according to a first exemplary embodiment of the present invention.

[0073] 请参照图1,电子装置1000包括微处理器与随机存取存储器(未绘示)。 [0073] Referring to FIG 1, the electronic device 1000 includes a microprocessor and a random access memory (not shown). 在本发明实施例中,嵌入式存储器储存装置100是嵌入在电子装置1000的电路基板上。 In an embodiment of the present invention, the embedded memory storage device 100 is embedded in the electronic device on the circuit board 1000. 通过微处理器与随机存取存储器的运作可从嵌入式存储器储存装置100中读取数据或将数据写入至嵌入式存储器储存装置100中。 By the operation of the microprocessor and a random access memory may read or write data into data in an embedded memory storage device 100 from the embedded memory 100 in the storage device. 例如,电子装置1000为智能型手机并且嵌入式存储器储存装置100是用以储存此智能型手机的操作系统。 For example, the electronic device 1000 is a smart phone and an embedded memory 100 is a storage device for storing an operating system of this smart phone.

[0074] 在本范例实施例中,嵌入式存储器储存装置100可为嵌入式多媒体卡(EmbeddedMulti Media Card,eMMC)。 [0074] In the present exemplary embodiment, embedded memory storage device 100 may be an embedded multimedia card (EmbeddedMulti Media Card, eMMC). 然而,必须了解的是,本发明不限于此,在本发明另一范例实施例中,嵌入式存储器储存装置100亦可为嵌入式安全数字卡(Embeded Secure Digital,eSD)或其它嵌入式非易失性存储器储存装置。 However, it must be understood that the invention is not limited thereto, in a further exemplary embodiment of the invention, the embedded memory storage device 100 may also be embedded Secure Digital Card (Embeded Secure Digital, eSD) or other non-volatile embedded volatile memory storage devices.

[0075] 图2是绘示图1所示的嵌入式存储器储存装置的概要方块图。 [0075] FIG. 2 is a schematic block diagram of an embedded memory storage apparatus shown in FIG. 1 shown in FIG.

[0076] 请参照图2,嵌入式存储器储存装置100包括连接器102、存储器控制器104与可复写式非易失性存储器模块106。 [0076] Referring to FIG 2, an embedded memory storage device 100 includes a connector 102, the memory controller 104 with a rewritable nonvolatile memory module 106. 在一范例实施例中,此连接器102、存储器控制器104与可复写式非易失性存储器模块106可皆封装于一颗芯片中。 In an exemplary embodiment, the connector 102, the memory controller 104 and nonvolatile rewritable memory module 106 may be in one chip are packaged.

[0077] 在本范例实施例中,连接器102是兼容于MMC标准。 [0077] In the present exemplary embodiment, connector 102 is compatible with the MMC standard. 然而,必须了解的是,本发明不限于此,连接器102亦可以是符合SD标准或其它嵌入式接口标准。 However, it must be understood that the invention is not limited thereto, the connector 102 may also be compliant with the SD standard or other embedded interface standard.

[0078] 存储器控制器104用以执行以硬件形式或固件形式实作的多个逻辑门或控制指令,并且根据电子装置1000的指令在可复写式非易失性存储器模块106中进行数据的写入、读取与抹除等运作。 [0078] The memory controller 104 to perform a plurality of control instructions or logic gates in hardware or firmware implementation, and write data in a rewritable nonvolatile memory module 106 according to an instruction of the electronic device 1000 in, read and erase and other operations.

[0079] 可复写式非易失性存储器模块106是耦接至存储器控制器104,并且用以储存电子装置1000所写入的数据。 [0079] The rewritable nonvolatile memory module 106 is coupled to memory controller 104, and an electronic device for storing data written 1000. 可复写式非易失性存储器模块106具有多个物理区块。 Rewritable nonvolatile memory module 106 having a plurality of physical blocks. 每一物理区块分别具有多个物理页面,其中属于同一个物理区块的物理页面可被独立地写入且被同时地抹除。 Each physical block has a plurality of physical pages which belong to the same physical page of a physical block can be independently written and is simultaneously erased. 更详细来说,物理区块为抹除的最小单位。 In more detail, the physical block is the minimum unit of erase. 亦即,每一物理区块含有最小数目的一并被抹除的存储单元。 That is, each physical block contains a minimum number of memory cells and erasing. 物理页面为编程的最小单元。 Physical page is the smallest unit of programming. 即,物理页面为写入数据的最小单元。 That is, the physical page as the smallest unit for writing data. 然而,必须了解的是,在本发明另一范例实施例中,写入数据的最小单位亦可以是物理扇区或其它大小。 However, it must be understood that, in the minimum unit of another exemplary embodiment of the present invention, the write data can also be a physical sector or other sizes. 例如,每一物理区块是由128个物理页面所组成。 For example, each physical block is composed of 128 physical pages. 然而,必须了解的是,本发明不限于此,每一物理区块是可由256个物理页面或其它任意个物理页面所组成。 However, it must be understood that the invention is not limited thereto, each physical block 256 may be a physical page, or any other physical page is composed. 每一物理页面包括使用者数据(user data)位区与冗余(redundancy)位区。 Each physical page includes user data (user data) region and the redundant bits (Redundancy) bit area. 使用者数据位区用以储存使用者的数据,而冗余位区用以储存系统的数据(例如,错误校正码)。 A user data area for storing bit data of the user, and the region for the redundant bits of the data storage system (e.g., error correction code).

[0080] 在本范例实施例中,可复写式非易失性存储器模块106为多阶存储单元(MultiLevel Cell,MLC)NAND型闪存模块。 [0080] In the present exemplary embodiment, the non-volatile rewritable memory module 106 is a multi-level cell (MultiLevel Cell, MLC) NAND flash memory module. 具体来说,NAND型闪存模块可根据每一存储单元可储存的数据位数而区分为MLC NAND型闪存模块及单阶层存储单元(Single-Level Cell,SLC) NAND型闪存模块。 More specifically, NAND-type flash memory modules can be divided into MLC NAND flash memory module and a single hierarchy storage unit (Single-Level Cell, SLC) NAND flash memory module while the data bits stored in each memory cell area. SLC NAND型闪存模块的每个存储单元仅能储存I个位数据,而MLCNAND型闪存模块的每个存储单元可储存至少2个以上的位数据。 Each memory cell SLC NAND flash memory module to store only the I-bit data, and each flash memory cell module MLCNAND store at least two bits of data. 例如,以4阶存储单元NAND型闪存模块为例,每一存储单元可储存2个位数据(即,"11"、" 10"、" 00"与"01")。 For example, a 4-level cell NAND flash memory module, for example, each memory cell can store two bits of data (i.e., "11", "10", "00" and "01"). 基此,对4阶存储单元闪存模块的写入可区分为2个阶段。 Group, writing to the memory cell of the flash memory modules order 4 can be divided into two stages. 第一阶段是下页面(1werpage)的写入,并且第二阶段为上页面(upper page)的写入,其中下页面的写入速度会快于上页面。 The first stage is a page (1werpage) is written, and the second stage of the page (upper page) writing, wherein the writing speed is faster than the page on the page. 因此,MLC NAND型闪存模块的物理页面可被区分为慢速物理页面(即,上页面)与快速物理页面(即,下页面)。 Thus, the physical page of MLC NAND flash memory modules may be divided into slow physical page region (i.e., page) and rapid physical page (i.e., the next page). 特别是,相较于上页面来说,下页面的储存可靠度较高。 In particular, compared to the previous page, the page is stored under high reliability. 类似地,在8阶存储单元NAND型闪存模块或16阶存储单元NAND型闪存模块的案例中,存储单元可储存更多位数据并且会以更多阶段来写入。 Similarly, in the case of 8-level cell NAND flash memory module 16 or MLC memory cells in the NAND flash memory module, the memory cell can store more bits of data and may be written in more stages. 在此,将写入速度最快的物理页面称为下页面,其它写入速度较慢的页面统称为上页面。 Here, the physical page to write the fastest is called the page, other slower writes referred to as a page on the page. 例如,上页面包括具有不同写入速度的多个页面。 For example, the page comprising a plurality of pages having a different writing speed. 此外,在其它实施例中,上页面也可为写入速度最慢的页面,或者写入速度最慢与部分写入速度快于写入速度最慢页面的页面。 Further, in other embodiments, the page may be a page to write the slowest speed, or the write speed of the slowest part of the writing and the writing speed is faster than the slowest In page. 例如,在8阶存储单元NAND型闪存模块中,下页面为写入速度最快与写入速度次快的页面,上页面则为写入速度最慢与写入速度次慢的页面。 For example, in an 8-level cell NAND flash memory module, the lower page is written and the fastest times faster write speed of the page, the page was written to the slowest writing speed and slow page views.

[0081]图3是根据本发明第一范例实施例所绘示的物理区块的示意图。 [0081] FIG. 3 is a schematic diagram illustrating the physical block of the embodiment depicted in accordance with a first exemplary embodiment of the present invention.

[0082] 请参照图3,4阶存储单元闪存模块的物理区块内的物理页面可根据其写入特性区分为多个快速物理页面310与多个慢速物理页面320,其中写入数据至快速物理页面310的速度快于写入数据至慢速物理页面320的速度并且数据储存于快速物理页面310的可靠度高于慢速物理页面320的可靠度。 [0082] Referring to Figures 3, 4-level cell flash memory modules within a physical page physical block write according to their properties into a plurality of physical pages 310 and a plurality of fast slow physical page 320, in which data is written to the fast speed faster than the physical page 310 is a data writing speed to slow physical page 320 and the data stored in a physical page 310 of flash reliability than the reliability of the physical page 320 is slow. 此外,数据必须根据物理页面的编号依序地被写入。 Further, the data must be written sequentially according to the numbering of the physical page.

[0083] 图4是根据本发明第一范例实施例所绘示的存储器控制器的概要方块图。 [0083] FIG. 4 is a diagram illustrating the memory controller depicted a schematic block diagram of a first exemplary embodiment according to the present invention.

[0084] 请参照图4,存储器控制器104包括存储器管理电路202、主机接口204与存储器接口206。 [0084] Referring to FIG 4, the memory controller 104 comprises a memory management circuitry 202, host interface 204 and the memory interface 206.

[0085] 存储器管理电路202用以控制存储器控制器104的整体运作。 [0085] The memory management circuit 202 for controlling the overall operation of the memory controller 104. 例如,存储器管理电路202可是由多个控制模块(例如,写入模块、读取模块、抹除模块等)所组成,并且在存储器储存装置100运作时,存储器管理电路202此些模块会根据电子装置1000的指令对可复写式非易失性存储器模块106进行数据的写入、读取与抹除等运作。 For example, memory management circuitry 202, but by a plurality of control modules (e.g., a write module, a read module, the erase module) formed, and when the operation of the memory storage device 100, memory management circuitry 202 of such an electronic module instruction means 1000 of rewritable nonvolatile memory module 106 data writing, erasing and reading operation and the like.

[0086] 在本范例实施例中,存储器管理电路202的控制模块是以程序来实作。 [0086] In the present exemplary embodiment, the memory block management circuit 202 of the control program is implemented. 例如,存储器管理电路202具有微处理器单元(未绘示)与只读存储器(未绘示),并且此些控制指令是被烧录至此只读存储器中。 For example, memory management circuitry 202 has a microprocessor unit (not shown) and a read-only memory (not shown), and is of such a control instruction in a read only memory programmed to this. 在此,此些微程序亦称为固件。 Here, the program slightly, also known as firmware. 当存储器储存装置100运作时,此些微程序会由微处理器单元来执行以进行数据的写入、读取与抹除等运作。 When operating a memory storage device 100, this program will be executed in slight writing of data, erase and read by the microprocessor and other operating units.

[0087] 在本发明另一范例实施例中,上述微程序亦可储存于可复写式非易失性存储器模块106的特定区域(例如,存储器模块中专用于存放系统数据的系统区)中。 [0087] In another exemplary embodiment of the present invention, the microprogram can be stored in a specific area rewritable nonvolatile memory module 106 (e.g., secondary memory modules for storing system data in the system area) in the. 此外,存储器管理电路202具有微处理器单元(未绘示)、只读存储器(未绘示)及随机存取存储器(未绘示)。 In addition, memory management circuitry 202 has a microprocessor unit (not shown), a read only memory (not shown) and a random access memory (not shown). 特别是,此只读存储器具有驱动码,并且当存储器控制器104被致能时,微处理器单元会先执行此驱动码段来将储存于可复写式非易失性存储器模块106中的微程序加载至存储器管理电路202的随机存取存储器中。 In particular, this drive having a read only memory code, and when the memory controller 104 is enabled, the microprocessor unit first performs this driving micro code segments stored in the rewritable nonvolatile memory module 106 program loaded to a random access memory in the memory management circuitry 202. 之后,微处理器单元会运转此微程序以进行数据的写入、读取与抹除等运作。 Thereafter, the microprocessor unit will operate this micro program data writing, reading and erasing operation and the like. 此外,在本发明另一范例实施例中,存储器管理电路202的控制模块亦可以一硬件形式来实作。 Further, in another exemplary embodiment of the present invention, the memory management circuit 202 of the control module may also be implemented in the form of a hardware.

[0088] 主机接口逻辑接口204是耦接至存储器管理电路202并且用以接收与识别电子装置1000所传送的指令与数据。 [0088] The host interface logic interface 204 is coupled to the memory management circuitry 202 and configured to receive identification instruction data transmitted by the electronic device 1000. 也就是说,电子装置1000所传送的指令与数据会通过主机接口逻辑接口204来传送至存储器管理电路202。 That is, instructions and data transmitted by the electronic device 1000 will be sent to the memory management circuit 202 through the host interface logic 204 interfaces. 在本范例实施例中,主机接口逻辑接口204是兼容于eMMC标准。 In the present exemplary embodiment, the host interface logic interface 204 is compatible with standard eMMC. 然而,必须了解的是本发明不限于此,主机接口逻辑接口204亦可以是兼容于eSD标准或其它适合的数据传输标准。 However, it must be understood that the present invention is not limited thereto, the host interface logic interface 204 also may be compatible with standard eSD or other suitable data transmission standard.

[0089] 存储器接口206是耦接至存储器管理电路202并且用以存取可复写式非易失性存储器模块106。 [0089] The memory interface 206 is coupled to the memory management circuitry 202 and for accessing the non-volatile rewritable memory module 106. 也就是说,欲写入至可复写式非易失性存储器模块106的数据会经由存储器接口206转换为可复写式非易失性存储器模块106所能接受的格式。 That is, to be written to the rewritable non-volatile memory 106 of data module 206 will be converted to non-volatile rewritable memory module 106 via a format acceptable to the memory interface.

[0090] 错误校正电路208是耦接至存储器管理电路202并且用以执行错误检查与校正程序以确保数据的正确性。 [0090] The error correction circuit 208 is coupled to the memory management circuitry 202 and to perform error checking and correction process to ensure the correctness of the data. 具体来说,在执行写入指令时,错误校正电路208会为欲写入的数据产生对应的错误校正码,并且存储器管理电路202会将此数据与对应的错误校正码写入至可复写式非易失性存储器模块106中。 Specifically, when executing the write instruction, error correction circuit 208 generates a corresponding error correction code to the data to be written, and memory management circuitry 202 and corresponding to this data will be error correction code written to rewritable the nonvolatile memory module 106. 之后,当存储器管理电路202从可复写式非易失性存储器模块106中读取数据时会同时读取此数据对应的错误检查与校正码,并且错误校正电路208会依据此错误检查与校正码对所读取的数据执行错误检查与校正程序。 Thereafter, when the memory management circuitry 202 to read data from the rewritable non-volatile memory module 106 simultaneously reads the data corresponding to error checking and correction code, and error correction 208 will be based on this error checking and correcting code circuit the read data to perform error checking and correction procedure.

[0091] 在本发明一范例实施例中,存储器控制器104还包括缓冲存储器210。 [0091] In an exemplary embodiment of the present invention, the memory controller 104 further includes a buffer memory 210. 缓冲存储器210是耦接至存储器管理电路202并且用以暂存来自于电子装置1000的数据与指令或来自于可复写式非易失性存储器模块106的数据。 Buffer memory 210 is coupled to the memory management circuitry 202 and from the electronic device for temporarily storing data and instructions 1000 or from a data rewritable nonvolatile memory module 106.

[0092] 在本发明一范例实施例中,存储器控制器104还包括电源管理电路212。 [0092] In an exemplary embodiment of the present invention, the memory controller 104 further comprises a power management circuit 212. 电源管理电路212是耦接至存储器管理电路202并且用以控制嵌入式存储器储存装置100的电源。 Power management circuit 212 is coupled to the memory management circuit 202 for controlling the embedded memory and the storage device 100 of the power supply.

[0093] 在本范例实施例中,存储器管理电路202可在可复写式非易失性存储器模块106中储存状态标示单元(例如,一旗标暂存器)并且将此状态标示单元的状态初始地标记为初始状态。 [0093] In the present exemplary embodiment, the memory management circuit 202 may be stored status marking unit (e.g., a flag register) in the rewritable nonvolatile memory module 106 in this state and the initial state of the cell designated marked as an initial state. 例如,在本发明范例实施例中,存储器管理电路202会将物理区块分组为储存区与系统区并且将状态标示单元储存在系统区的物理区块中。 For example, in the exemplary embodiment of the present invention, the memory block management circuit 202 will be grouped into a physical storage area and the state of the system area designated in a physical block unit is stored in the system area. 储存区的物理区块用以储存使用者数据(例如,电子装置所存取的数据)并且系统区的物理区块用以储存嵌入式存储器储存装置100的系统数据(例如,物理区块的数目、物理页面的数目等)。 Physical block number storage area to store user data (e.g., data accessed by the electronic device) and a system area for the physical block data system 100 (e.g., a physical block stored in the embedded memory storage means the number, etc.) physical pages.

[0094] 特别是,当仅使用物理区块的快速物理页面来储存数据时,存储器管理电路202会将此状态标示单元的状态标记为第一状态。 [0094] In particular, when only the fast physical page physical block to store data, the memory management circuit 202 will mark this status flag to a first state of the cell state.

[0095]图5是根据本发明第一范例实施例所绘示的仅以快速物理页面来储存数据的示意图,为了方便说明在此假设所储存的数据大小是等于一个物理区块的大小并且可复写式非易失性存储器模块106是由物理区块502与物理区块504所组成。 [0095] FIG. 5 is a schematic diagram illustrating the embodiment depicted only physical page to quickly store data in accordance with a first exemplary embodiment of the present invention, for convenience of explanation is assumed here that the size of the stored data is equal to the size of a physical block and may rewritable nonvolatile memory module 106 is a physical block 502 and physical block 504 components.

[0096] 请参照图5,原本应被储存在物理区块502的慢速物理页面中的数据会被储存在物理区块504的快速物理页面中。 [0096] Referring to FIG 5, the data should originally be stored in a slow physical page in the physical block 502 may be stored in physical pages of physical block 504 in the flash. 由于此笔数据是被储存于快速物理页面中(如虚线所示),因此,数据会不易发生错误位而遗失。 Because this data is stored in the pen quickly physical page (shown in phantom), and therefore, the data will be lost easily occurred error bits.

[0097] 此外,当正常地使用物理区块的快速物理页面与慢速物理页面来储存数据时,存储器管理电路202会将此状态标示单元的状态标记为第二状态。 [0097] Further, when the normal use of the physical page of the physical block fast and slow physical page to store data, the memory management circuit 202 will mark this status flag cell state to the second state.

[0098] 图6是根据本发明第一范例实施例所绘示的以快速物理页面与慢速物理页面来储存数据的示意图。 [0098] FIG. 6 is a schematic view of a fast and slow physical page physical page to store the data depicted embodiment according to a first exemplary embodiment of the present invention.

[0099] 请参照图6,存储器管理电路202是正常地使用可复写式非易失性存储器模块106的快速物理页面与慢速物理页面来储存数据(如虚线所示)。 [0099] Referring to FIG 6, the memory management circuitry 202 is normal to use rewritable nonvolatile flash memory module 106 and the slow physical page physical page to store data (shown in phantom). 由于快速物理页面与慢速物理页面皆会被使用来储存数据,因此,嵌入式存储器储存装置100的储存空间会被充分的使用。 Because of the rapid and slow physical pages are physical pages are used to store data, and therefore, storage space embedded memory storage device 100 will be fully used. 在此,正常地使用可复写式非易失性存储器模块106的快速物理页面与慢速物理页面来储存数据亦称为正常储存机制。 Here, the normal use of rewritable nonvolatile flash memory module 106 and the slow physical page physical page to store the data storage mechanism is also referred to as normal.

[0100] 在本范例实施例中,当从电子装置1000或其它外部主机接收到预定制造商指令(vender command)时,存储器管理电路202会检测状态标示单元的状态。 [0100] In the present exemplary embodiment, when the electronic apparatus is received from the host 1000, or other external manufacturer to a predetermined command (vender command), the memory management circuit 202 detects the state of the cell marked state. 倘若状态标示单元的状态被标记为第一状态时,存储器管理电路202会自动地读取原先储存于嵌入式存储器储存装置100中的数据,使用嵌入式存储器储存装置100的快速物理页面与慢速物理页面来重新储存数据并且将状态标示单元的状态标记为第二状态。 If the state when the state of the cell is designated as a first state, memory management circuitry 202 automatically reads the data previously stored in the embedded memory storage device 100, a storage device using the embedded memory 100 of the fast and slow physical page state physical page to store the data and re-marking unit marks the state of the second state. 也就是说,当接收到预定制造商指令时,存储器管理电路202自动地根据嵌入式存储器储存装置100的状态,来将数据重新储存以更有效率地使用储存空间。 That is, when receiving a predetermined manufacturer instructions, memory management circuitry 202 automatically according to the state of the embedded memory storage device 100 to store the data back to more efficient use of storage space.

[0101] 值得一提的是,在此,预定制造商指令是预先设计用以启动重新储存机制的指令。 [0101] It is worth mentioning that, in this case, the predetermined instruction is a manufacturer of pre-designed to store instructions to restart mechanism. 然而,本发明不限于此,在本发明另一范例实施例中,存储器管理电路202亦可根据标准指令中的信息来启动重新储存机制。 However, the present invention is not limited thereto, in a further exemplary embodiment of the present invention, the memory management circuit 202 may re-start mechanism according to the information stored in the standard instruction. 例如,当主机系统连续下达数个写入指令时,存储器管理电路202会启动重新储存机制。 For example, the host system continuously when the number of issued write command, the memory management circuit 202 will restart Repository. 或者,当写入指令中包含特定参数时,存储器管理电路202会启动重新储存机制。 Alternatively, when the write command comprises specific parameters, memory management circuitry 202 will restart Repository. 又或者,当主机系统使用保留给使用者自行定义的标准指令时,存储器管理电路202会启动重新储存机制。 Or, when the host system using a standard instruction to a user definable retention, memory management circuitry 202 will restart Repository.

[0102] 图7是根据本发明第一范例实施例所绘示的数据管理方法的流程图。 [0102] FIG. 7 is a flowchart of a data management method according to a first embodiment depicted exemplary embodiment of the present invention.

[0103] 请参照图7,在步骤S701,存储器管理电路202会判断是否接收到预定制造商指令。 [0103] Referring to FIG 7, in step S701, the memory management circuitry 202 determines whether a predetermined manufacturer instructions. 倘若接收到预定制造商指令时,在步骤S703中,存储器管理电路202会判断状态标示单元的状态是否被标记为第一状态。 When the event is received if a predetermined manufacturer instruction, in step S703, the memory management circuitry 202 determines the state of the state unit is designated as a first state.

[0104]倘若状态标示单元的状态非被标记为第一状态时,图7的流程会被结束。 [0104] If the state when the non-marking state of the cell is marked as a first state, the flow of FIG. 7 will be terminated. 倘若状态标示单元的状态被标记为第一状态时,在步骤S705中,存储器管理电路202会使用可复写式非易失性存储器模块106的快速物理页面与慢速物理页面来重新储存原先已储存在可复写式非易失性存储器模块的快速物理页面的数据并且将状态标示单元的状态标记为第二状态。 If the state when the state of the cell is designated as a first state, in step S705, the memory management circuitry 202 uses rewritable nonvolatile flash memory module 106 and the physical page physical page slow to re-store the original saved in the data rewritable nonvolatile flash memory physical page module and the state of the marking unit status flag to the second state.

[0105][第二范例实施例] [0105] [Second exemplary embodiment]

[0106] 第二范例实施例的嵌入式存储器储存装置的结构本质上是相同于第一范例实施例的嵌入式存储器储存装置,以下将配合图2与图3的硬件元件来说明第二范例实施例与第一范例实施例的差异之处。 [0106] is essentially identical to the first exemplary configuration of embedded memory storage device of a second exemplary embodiment of embedded memory storage device of this embodiment, the mating hardware elements of Figures 2 and 3 will be described a second exemplary embodiment the differences with the embodiment according to the first exemplary embodiment.

[0107] 在第二范例实施例中,嵌入式存储器储存装置100是以焊接方式黏着至电子装置1000的电路基板上,以与电子装置1000的微处理器耦接。 [0107] In the second exemplary embodiment, embedded memory storage device 100 is adhered to the welding of the electronic device on the circuit board 1000, and a microprocessor coupled to the electronic device 1000 connected. 并且,在焊接之前,预定数据(例如,用于电子装置1000的操作系统映象文件)会通过一刻录机制被储存至可复写式非易失性存储器模块106中。 And, prior to welding, the predetermined data (e.g., electronic device 1000 operating system image file) is stored by a recorder mechanism to rewritable nonvolatile memory module 106.

[0108] 在此刻录机制中,嵌入式存储器储存装置100的存储器控制器104仅使用可复写式非易失性存储器模块106的快速物理页面来储存预定数据。 [0108] In this recorder mechanism, the memory controller 104 embedded memory storage device 100 uses only rewritable nonvolatile flash memory module 106 to physical page store predetermined data. 具体来说,当从主机系统(未绘示)接收到预定制造商指令时,存储器管理电路202会识别状态标示单元的状态。 Specifically, upon receiving from the host system (not shown) to a predetermined manufacturer instructions, memory management circuitry 202 identifies the state of the cell marked state. 倘若状态标示单元的状态被标记为初始状态时,存储器管理电路202会仅使用可复写式非易失性存储器模块106的快速物理页面来储存主机系统欲写入的预定数据(如图5所示)并且将状态标示单元的状态标记为第一状态。 If the state when the state of the cell is designated as the initial state flag, the memory management circuit 202 uses only the rewritable nonvolatile flash memory module 106 to physical page store predetermined data to be written to the host system (shown in Figure 5 ) and the state of the status flag marking unit is a first state. 籍此,由于此笔数据是被储存于快速物理页面中,其在通过工作机台的焊接时,其数据会较稳定而不被破坏。 Whereby, since this data is stored in the pen quickly physical page, which passes through the welding machine, the data is stable without being damaged.

[0109] 此外,在本范例实施例中,当此嵌入式存储器储存装置100处于一常温或较稳定的工作环境之后(例如,在通过了一焊接机台之后),预定数据会被如第一范例实施例所述的重新储存机制来重新储存至可复写式非易失性存储器模块106中。 [0109] Further, in the present exemplary embodiment, after this embedded memory storage device 100 is a normal or relatively stable working environment (e.g., after passing through a welding machine), as in the first predetermined data is to re-store to non-volatile rewritable memory module 106 re Repository exemplary embodiment according to FIG. 即,存储器管理电路202会使用可复写式非易失性存储器模块106的快速物理页面与慢速物理页面来重新储存原先已储存于可复写式非易失性存储器模块106的快速物理页面的预定数据(如图6所示)并且将状态标示单元的状态标记为第二状态。 That is, the memory management circuit 202 uses rewritable nonvolatile flash memory module 106 and the physical page physical page slow to re-store the predetermined previously stored in rewritable nonvolatile flash memory module 106 of the physical page data (shown in FIG. 6) and the state of the designated state of the cell is marked as the second state.

[0110] 如上所述,快速页面的可靠度高于慢速页面,因此,在焊接之前仅以快速页面来储存数据,可有效减少在将嵌入式存储器储存装置100焊接至电子装置1000的电路基板的过程中,储存于嵌入式存储器储存装置100的数据因高温而发生错误位的机会。 [0110] As described above, the reliability is higher than the quick page slow page, therefore, only the quick page prior to welding to store data, which can effectively reduce the embedded memory storage device 100 is soldered to the circuit board 1000 of the electronic device process, opportunistic data stored in the embedded memory device 100-bit error occurs due to high temperatures of storage. 接着,在焊接之后,使用快速页面与慢速页面来重新储存原先所储存的数据可使嵌入式存储器储存装置100的储存空间被更有效地运用。 Next, after welding, and slow the use of fast page to page re-store the original data stored in the storage space allows embedded memory storage device 100 is more effective use.

[0111] 值得一提的是,在此,预定制造商指令是预先设计用以启动刻录机制及重新储存机制的指令。 [0111] It is worth mentioning that, in this case, the predetermined instruction is a manufacturer of pre-designed instruction to start the recording mechanism and re-save mechanisms. 然而,本发明不限于此,在本发明另一范例实施例中,存储器管理电路202亦可根据标准指令中的信息来启动刻录机制及重新储存机制。 However, the present invention is not limited thereto, in a further exemplary embodiment of the present invention, the memory management circuit 202 may also be re-start the recording mechanism and the mechanism according to the information stored in the standard instruction. 例如,当主机系统连续下达数个写入指令时,存储器管理电路202会认为其属于一预设的特殊态样因此而启动刻录机制及重新储存机制。 For example, the host system continuously when the number of issued write command, the memory management circuit 202 will be considered to belong to a particular aspect of the preset start burning mechanism and thus re-storage mechanism. 或者,当写入指令中包含特定参数时,存储器管理电路202会启动刻录机制及重新储存机制。 Alternatively, when the write command comprises a specific parameter, a memory management circuit 202 will re-start the recording mechanism and storage mechanism. 又或者,当主机系统使用保留给使用者自行定义的标准指令时,存储器管理电路202会启动刻录机制及重新储存机制。 Or, when the host system using a standard instruction to a user definable retention, memory management circuitry 202 will re-start the recording mechanism and storage mechanism.

[0112] 图8是根据本发明第一范例实施例所绘示的数据管理方法的流程图。 [0112] FIG 8 is a flowchart of a data management method according to a first embodiment depicted exemplary embodiment of the present invention.

[0113] 请参照图8,在步骤S801中,会判断是否接收到预定制造商指令。 [0113] Referring to FIG 8, in step S801, it determines whether a predetermined manufacturer instructions.

[0114] 倘若未接收到预定制造商指令时,则结束图8的流程。 [0114] If not received during a predetermined manufacturer instructions, the flow of FIG. 8 is ended.

[0115] 倘若接收到预定制造商指令时,在步骤S803中,会判断状态标示单元的状态是否为初始状态。 If [0115] If upon receiving a predetermined instruction manufacturer, in step S803, the marking unit determines the state of the initial state of the state.

[0116]倘若状态标示单元的状态为初始状态时,在步骤S805中,仅使用嵌入式存储器储存装置的快速物理页面来储存预定数据并且将状态标示单元的状态标记为第一状态。 [0116] If the state when the state of the cell designated as the initial state in step S805, using fast physical page embedded memory storage device to store predetermined data and only the state flag state of the cell designated as a first state. 在此,步骤S805亦称为烧录步骤。 Here, step S805 also known as burning step.

[0117] 倘若状态标示单元的状态非为初始状态时,在步骤S807中,会判断状态标示单元的状态是否为第一状态。 [0117] If the state when a non-marking state of the cell as the initial state in step S807, determines whether the state is a first state of the state unit is designated.

[0118] 倘若状态标示单元的状态为第一状态时,在步骤S809中,使用嵌入式存储器储存装置的快速物理页面与慢速物理页面来重新储存原先储存在嵌入式存储器储存装置中的预定数据并且将状态标示单元的状态标记为第二状态。 [0118] If the state when the state of the cell is marked a first state, in step S809, using fast physical page embedded memory and slow storage means to re-store the predetermined physical page of data previously stored in the embedded memory storage means and the state of the status flag marking unit to the second state. 在此,步骤S809亦称为重新储存步骤。 Here, step S809 also known as re-storage step.

[0119]倘若状态标示单元的状态非为第一状态时,则结束图8的流程。 [0119] If the state when a non-marking state of the cell to a first state, the flow of FIG. 8 is ended. 也就是说,倘若状态标示单元的状态非为初始状态或第一状态并且接收到预定制造商指令,则所接收到的预定制造商指令会被忽略。 That is, if the state of the cell is a non-marking state is an initial state or a first state and receives a predetermined instruction manufacturer, then the received predetermined manufacturer instructions will be ignored.

[0120] 如上所述,刻录机制或重新储存机制亦可根据标准指令中的信息来启动。 [0120] As described above, recording storage mechanism or mechanisms may be re-started according to the standard instruction information. 因此,在本发明另一范例实施例中,图8的步骤S801亦可以判断是否接收到属于特殊态样的标准指令来取代。 Accordingly, in a further exemplary embodiment of the present invention, the step S801 of FIG. 8 also may determine whether the received standard is a special kind of state instruction group.

[0121][第三范例实施例] [0121] [Third exemplary embodiment]

[0122] 根据第二范例实施例的数据管理方法是在焊接之后执行重新储存步骤来将整个预定数据重新储存于嵌入式存储器储存装置的物理区块中。 [0122] step is executed again to store data management method according to a second exemplary embodiment of the welding after the predetermined data is re-stored in the entire physical block in the embedded memory storage device. 而第三范例实施例的数据管理方法是在后续执行写入指令时将储存于多个快速物理页面中的预定数据分批地重新储存,而不会在焊接之后立即将所有预定数据重新储存于嵌入式存储器储存装置的物理区块中。 The data management method according to the third exemplary embodiment is performed in a subsequent write command when the predetermined data is stored in a plurality of physical pages fast batchwise restored, all without immediately re-stored in the predetermined data after welding physical block embedded memory storage device. 第三范例实施例的嵌入式存储器储存装置的结构本质上是相同于第一范例实施例的嵌入式存储器储存装置,以下将配合图2与图3的硬件元件来说明第二范例实施例与第一范例实施例的差异之处。 Essentially structure embedded memory storage device according to the third exemplary embodiment is the same as the first exemplary embodiment of the embedded memory storage device implemented with hardware elements will Figures 2 and 3 will be described first embodiment and second exemplary embodiment the difference therebetween according to an exemplary embodiment.

[0123] 同样地,在第三范例实施例中,当存储器控制器104接收到预定制造商指令并且状态标示单元的状态为初始状态,存储器管理电路202会仅使用可复写式非易失性存储器模块106的快速物理页面来储存预定数据(例如,如图5所示)并且将状态标示单元的状态标记为第一状态。 [0123] Similarly, in the third exemplary embodiment, when the memory controller 104 receives a predetermined instruction for the manufacturer and the state designated as the initial state of the state unit, a memory management circuit 202 uses only the rewritable non-volatile memory fast physical page module 106 to store predetermined data (e.g., shown in FIG. 5) and the state of the marking state of the cell as a first state.

[0124] 之后,当存储器控制器104从电子装置1000中接收到写入指令时或开机信号时,存储器管理电路202会判断欲写入的物理页面中是否储存以刻录机制所写入的预定数据,其中,判断的方式可例如是通过一预定数据还原表。 After [0124] When memory controller 104 receives the write instruction to the electronic device 1000 or start signal, the physical page memory management circuitry 202 determines whether the storage to be written to a predetermined write recorder mechanism data, wherein the determination of a manner for example by reducing the predetermined data table. 倘若欲写入的物理页面中已储存以刻录机制所写入的预定数据时,存储器管理电路202会通过在执行写入指令的同时一并整理此预定数据。 When the physical page to be written if the stored data to a predetermined burning mechanism written by the memory management circuit 202 will be collectively organize this predetermined data while writing instruction. 也就是说,存储器管理电路202会在执行写入指令时使用快速物理页面与慢速物理页面来重新储存预定数据。 That is, the memory management circuitry 202 uses the fast and slow physical page physical page when executing a write command to re-store predetermined data. 也就是说,存储器管理电路202是在后续需写入数据时才分批地将以刻录机制所写入的预定数据重新储存至物理区块中。 That is, the memory management circuitry 202 only when predetermined data is required to write data subsequent batches will burn mechanism restocking written to the physical block.

[0125] 特别是,在第三范例实施例中,存储器管理电路202会建立一预定数据还原表来记录用以储存以刻录机制写入的预定数据的物理页面。 [0125] In particular, in the third exemplary embodiment, the memory management circuit 202 creates a record predetermined data to the physical page restore table for storing predetermined data is written in a burning mechanism. 并且,当储存于某一物理页面的预定数据已被使用正常储存机制来重新储存时,存储器管理电路202会于此预定数据还原表中记录此信息。 And, when the predetermined data is stored in one physical page have been stored using the normal mechanism for re-storage, memory management circuitry 202 can restore the data thereto a predetermined record this information in the table. 也就是说,存储器管理电路202会在执行写入指令时根据预定数据还原表来重新储存未以正常储存机制储存的预定数据。 That is, the memory management circuitry 202 can store predetermined data is not re-stored in the normal storage mechanism according to a predetermined data restoration table write instruction is executed.

[0126] 图9是根据本发明第三范例实施例所绘示的执行烧录步骤的流程图。 [0126] FIG. 9 is a flowchart of steps performed burn embodiment depicted according to a third exemplary embodiment of the present invention.

[0127] 请参照图9,在步骤S901中,会判断是否接收到预定制造商指令。 [0127] Referring to FIG 9, in step S901, it determines whether a predetermined manufacturer instructions.

[0128] 倘若未接收到预定制造商指令时,则结束图9的流程。 [0128] If not received during a predetermined manufacturer instructions, the flow of FIG. 9 is ended.

[0129] 倘若接收到预定制造商指令时,在步骤S903中,会判断状态标示单元的状态是否为初始状态。 If [0129] If upon receiving a predetermined instruction manufacturer, in step S903, the marking unit determines the state of the initial state of the state.

[0130] 倘若状态标示单元的状态为初始状态时,在步骤S905中,仅使用嵌入式存储器储存装置的快速物理页面来储存预定数据并且将状态标示单元的状态标记为第一状态。 [0130] If the state when the state of the cell designated as the initial state in step S905, using fast physical page embedded memory storage device to store predetermined data and only the state flag state of the cell designated as a first state. 在此,步骤S905亦称为烧录步骤。 Here, step S905 also known as burning step.

[0131] 图10是根据本发明第三范例实施例所绘示的于执行写入指令时将预定数据重新储存的流程图。 [0131] FIG. 10 is a flowchart of the write instruction stored predetermined data back to the embodiment depicted performed according to a third exemplary embodiment of the present invention.

[0132] 请参照图10,在接收到写入指令后,在步骤S1001中,会判断状态标示单元的状态是否为第一状态。 If [0132] Referring to FIG 10, after receiving the write command, in step S1001, determines the state of the marking unit is a first state of the state.

[0133] 倘若状态标示单元的状态为第一状态时,在步骤S1003中,存储器管理电路202会根据预定数据还原表判断对应此写入指令的物理页面是否储存以刻录机制写入的预定数据(即,尚未以还原正常储存机制重新储存的预定数据)。 [0133] If the state when the state of the cell is marked a first state, in step S1003, memory management circuitry 202 can restore the data corresponding to this table is determined according to a predetermined write instruction if the physical page is stored in the predetermined data is written in burning mechanism (i.e., the predetermined data has not been restored to normal storage mechanism for re-storage).

[0134] 倘若对应此写入指令的物理页面储存以刻录机制写入的预定数据,在步骤S1005中,执行此写入指令并且同时使用正常储存机制来重新储存此预定数据。 [0134] If this write instruction corresponding to the physical page is stored in a predetermined data recorder mechanism written in step S1005, this write instruction is executed at the same time to re-use the normal storage mechanisms to store this data is predetermined.

[0135] 倘若对应此写入指令的物理页面未储存以刻录机制写入的预定数据,在步骤S1007中,执行此写入指令。 [0135] If this write instruction corresponding to the physical page is not stored in a predetermined data recorder mechanism written in step S1007, this write instruction execution.

[0136] 之后,在步骤S1009中,会根据预定数据还原表来判断所有以刻录机制所储存的预定数据是否皆已使用正常储存机制来重新储存。 After [0136] In step S1009, will be determined according to the predetermined data table is restored to all of the predetermined data stored in the recorder mechanism have switched using normal storage mechanism to store again.

[0137] 倘若所有以刻录机制所储存的预定数据皆已使用正常储存机制来重新储存,在步骤SlOll中,将状态标示单元的状态标记为第二状态。 [0137] If all the predetermined data stored in the recorder mechanism have switched using normal storage mechanism to be restored, in step SlOll, the state of the marking unit marks the state to the second state. 之后,结束图10的流程。 Thereafter, the flow of FIG. 10 ends.

[0138] 值得一提的是,在本发明另一范例实施例中,存储器管理电路202亦可在执行物理区块的平均抹损(wear-leveling)程序而需搬移数据时一并重新储存以刻录机制所写入的预定数据。 [0138] It is worth mentioning that in another exemplary embodiment of the present invention, the memory management circuit 202 may also be a physical block, when executed wipe average loss (wear-leveling) program needs to move together again stored in the data burn predetermined data write mechanism. 因此,在本发明另一范例实施例中,图10的步骤S1001与步骤S1003亦可以判断是否执行平均抹损程序以及判断欲搬移的数据是否为以刻录机制写入的预定数据来取代。 Accordingly, in a further exemplary embodiment of the present invention, the step S1001 in FIG. 10 and step S1003 may also determine whether to perform wear leveling loss program to be moved, and determines whether the predetermined data is data to be written substituted burning mechanism. 在此,平均抹损程序为本领域技术人员所熟知的技术,在此不详细描述。 Here, the average loss wipe procedure well known to those skilled in the art, are not described in detail herein.

[0139] 综合上述,本发明范例实施例的数据管理方法是通过重新储存机制来将仅使用快速物理页面储存的数据使用快速物理页面与慢速物理页面来重新储存,基此,可有效地使用嵌入式存储器储存装置的储存空间。 [0139] In summary, the example embodiment of the present invention is a data management method by re-use mechanism to store only the data stored in the physical page quickly using fast and slow physical page physical page to be restored, this group can be effectively used storage means to store the embedded memory. 此外,在本发明范例实施例中,刻录机制仅使用嵌入式存储器储存装置中较为稳定的快速物理页面来储存预定数据。 Further, in the exemplary embodiment of the present invention, the mechanism used to burn only a memory storage device embedded stable physical page to quickly store predetermined data. 之后,当嵌入式存储器储存装置以焊接黏着至电子装置的电路基板上时可有效地避免因高温而产生数据错误。 Thereafter, when the circuit board embedded memory storage device to the electronic device is adhered to the welding can be effectively prevented due to high temperature data errors. 再者,于焊接之后,通过上述还原正常储存机制,嵌入式存储器储存装置即可正常地根据电子装置的指令来进行数据的存取。 Moreover, after the welding in, by the above normal storage reduction mechanism, normally embedded memory storage means to the electronic device according to an instruction for data access. 基此,本发明范例实施例的数据管理方法、存储器控制器与嵌入式存储器储存装置可有效地避免因焊接所产生的数据遗失。 Data base management method of this embodiment, the example of the present invention, the memory controller with embedded memory storage device can effectively avoid the loss of data on welding.

[0140] 虽然本发明已以实施例揭露如上,然其并非用以限定本发明,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当视所附的权利要求范围所界定者为准。 [0140] Although the present invention has been disclosed in the above embodiments, they are not intended to limit the present invention, any skilled in the art having ordinary knowledge, without departing from the spirit and scope of the present invention, various omissions, substitutions can be made to defined and variations, so that the scope of the invention as defined by the attached scope of claims and their equivalents.

Claims (20)

  1. 1.一种用于嵌入式存储器储存装置的数据管理方法,其中该嵌入式存储器储存装置具有多个物理区块并且该多个物理区块具有多个快速物理页面与多个慢速物理页面,该数据管理方法包括: 将一状态标示单元的一状态初始地标记为一初始状态,其中该状态标示单元是储存在该嵌入式存储器储存装置中; 判断是否从一主机系统接收到一预定制造商指令; 若接收到该预定制造商指令,检测该状态标示单元的该状态; 若接收到该预定制造商指令并且该状态标示单元的该状态为该初始状态,执行一烧录步骤,其中该烧录步骤用以仅使用该嵌入式存储器储存装置的该些快速物理页面中至少一个的快速物理页面来储存一预定数据并且将该状态标示单元的该状态标记为一第一状态,其中该烧录步骤会在该嵌入式存储器储存装置经过一焊接制程处理之前完成;以及 A data management method for embedded memory storage device, wherein the embedded memory storage means having a plurality of physical blocks and physical blocks of the plurality of physical pages having a plurality of fast and slow plurality of physical pages, the data management method comprising: an initial state to a state of a flag marking unit to an initial state, the state wherein the marking unit is stored in the embedded memory storage device; determining whether received from a host system to a predetermined manufacturer command; if receiving the predetermined instruction manufacturer, the detection of the state of the state unit is marked; if receiving the instruction for the manufacturer and the predetermined state of the state of the cell marked an initial state for performing a burning step in which the burning the step of recording using only the embedded memory for storing the plurality of flash devices of at least one physical page in the physical page to quickly store a predetermined marking data and the state of the state of the cell is marked as a first state, wherein the programming will go through a step prior to the welding process is processed in the embedded memory storage means; and 在该嵌入式存储器储存装置经过该焊接制程处理之后,重新储存该预定数据到该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面中。 After the embedded memory storing means through the process of welding process, re-storing the predetermined data to the plurality of flash least one physical page and physical page quickly slow the plurality of the at least one physical page in the physical page slow.
  2. 2.根据权利要求1所述的数据管理方法,更包括: 检测该状态标示单元的该状态,其中当仅该些快速物理页面中至少一个的快速物理页面被用来储存该预定数据时,该状态标示单元的该状态被标记为该第一状态。 2. The data management method according to claim 1, further comprising: detecting the marking state of the state unit, wherein the plurality of flash only when at least one physical page physical page quickly storing the predetermined data is used, the state of the state flag marking unit is in the first state.
  3. 3.根据权利要求2所述的数据管理方法,更包括: 其中当该状态标示单元的该状态被标记为该第一状态时,读取该预定数据,执行一重新储存步骤,其中该重新储存步骤同时使用该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面来重新储存该预定数据;以及将该状态标示单元的状态标记为一第二状态。 3. The data management method according to claim 2, further comprising: wherein when the state of the state flag marking unit that is a first state, predetermined data is read, the step of performing a re-save, wherein the restocking the step of using both the plurality of predetermined data in at least a fast physical page physical page to quickly re-stored physical page with the plurality of at least one slow slow physical page; and the state of the status flag marking unit as a second status.
  4. 4.根据权利要求3所述的数据管理方法,更包括: 判断是否从该主机系统接收到一预定制造商指令; 判断该状态标示单元的该状态;以及仅当接收到该预定制造商指令并且该状态标示单元的该状态为该第一状态时,才执行该重新储存步骤。 4. The data management method according to claim 3, further comprising: determining whether received from the host system to a predetermined manufacturer instructions; determines the state of the state designated unit; and only when receiving the predetermined instruction and Manufacturer when the state of the state unit is designated the first state, before the implementation of the re-storing step.
  5. 5.根据权利要求2所述的数据管理方法,更包括: 从一主机系统接收至少一标准指令; 判断该至少一标准指令是否属于一特殊态样; 仅当该至少一标准指令属于该特殊态样,才检测该状态标示单元的该状态。 The data management method according to claim 2, further comprising: receiving at least one standard instruction from a host system; determining whether the at least one standard instruction belongs to a particular aspect; only when the at least one standard instruction belonging to the special state like, it detects the state of the state designated unit.
  6. 6.根据权利要求1所述的数据管理方法,其中重新储存该预定数据到该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面中的步骤包括: 执行来自于一主机系统的多个写入指令来同时使用该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面来重新储存该预定数据。 The data management method according to claim 1, wherein the predetermined data is again stored to the plurality of flash step the at least one physical page and physical page quickly slow the plurality of the at least one physical page in the physical page slow comprising: performing a plurality of write command from a host system while using the predetermined data to the plurality of physical pages fast of at least one physical page to quickly store and the plurality of the slow re-physical page physical page of at least one slow .
  7. 7.根据权利要求6所述的数据管理方法,更包括: 将该预定数据分批地重新储存至该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面中。 7. The data management method according to claim 6, further comprising: re-store the predetermined batch data to the plurality of flash least one physical page and physical page quickly slow the plurality of physical pages of at least a slow speed physical page.
  8. 8.根据权利要求1所述的数据管理方法,其中该预定数据为一映象文件或是一操作系统文件。 8. The data management method according to claim 1, wherein the predetermined data is an image file or an operating system file.
  9. 9.一种嵌入式存储器储存装置,包括: 一连接器,用以耦接至一主机系统; 一可复写式非易失性存储器模块,具有多个物理区块并且每一该多个物理区块具有多个快速物理页面与慢速物理页面;以及一存储器控制器,耦接至该连接器与该可复写式非易失性存储器模块, 其中该存储器控制器更用以将一状态标示单元的一状态初始地标记为一初始状态,其中该状态标示单元是储存在该嵌入式存储器储存装置中, 其中该存储器控制器更用以判断是否从一主机系统接收到一预定制造商指令,并且判断该状态标示单元的该状态, 其中仅当接收到该预定制造商指令并且该状态标示单元的该状态为该初始状态时,该存储器控制器才仅使用该些快速物理页面中至少一个的快速物理页面来储存一预定数据,其中上述仅使用该些快速物理页面中至少一个的快速物理页 An embedded memory storage device, comprising: a connector for coupling to a host system; a rewritable non-volatile memory module having a plurality of physical blocks and each of the plurality of physical regions a block having a plurality of fast and slow physical page physical page; and a memory controller, coupled to the connector to the rewritable nonvolatile memory module, wherein the memory controller is further configured to mark a state of the unit a state flag initially to an initial state, the state wherein the marking unit is stored in the embedded memory storage device, wherein the memory controller further configured to determine whether it has received from a host system to a predetermined manufacturer instructions, and Analyzing the state of the state unit marking, wherein only when receiving the instruction for the manufacturer and the predetermined state of the state unit designated for the initial state, the memory controller before using only the plurality of the at least one physical page Quick fast to store a predetermined physical page data, wherein the plurality of only the above-described fast of at least one physical page in the physical page fast 来储存该预定数据的运作是在该嵌入式存储器储存装置经过一焊接制程处理之前完成, 其中在该嵌入式存储器储存装置经过该焊接制程处理之后,该存储器控制器更用以重新储存该预定数据到该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面中。 Operation to store the predetermined data is embedded in the memory storage device prior to a soldering process after processing is completed, after which the embedded memory storing means through the process of welding process, the memory controller is further configured to re-store the predetermined data the plurality of physical pages to flash at least one of the plurality of fast and slow physical page physical page at least a slow physical page.
  10. 10.根据权利要求9所述的嵌入式存储器储存装置,在上述仅使用该些快速物理页面中至少一个的快速物理页面来储存该预定数据的运作中, 该存储器控制器更用以将该状态标示单元的该状态标记为一第一状态。 10. The embedded memory storage device according to claim 9, in the flash using only the plurality of the at least one physical page in the physical page to quickly store the predetermined data operation, the memory controller is further configured to the state the marking unit marks the state is a first state.
  11. 11.根据权利要求9所述的嵌入式存储器储存装置, 其中该存储器控制器更用以检测该状态标示单元的该状态,其中当仅该些快速物理页面中至少一个的快速物理页面被用来储存该预定数据时,该状态标示单元的该状态被标记为一第一状态。 11. The embedded memory storage device according to claim 9, wherein the memory controller is further for detecting the marking state of the state unit, wherein the plurality of flash only when at least one physical page physical page is used to fast when the predetermined data is stored, the state of the state of the marking unit is marked as a first state.
  12. 12.根据权利要求11所述的嵌入式存储器储存装置, 其中该存储器控制器更用以当该状态标示单元的该状态被标记为该第一状态时,读取该预定数据,执行一重新储存步骤,其中该重新储存步骤同时使用该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面来重新储存该预定数据,并且将该状态标示单元的状态标记为一第二状态。 12. The embedded memory storage device according to claim 11, wherein the memory controller is further configured to, when the state of the state flag marking unit that is a first state, read the predetermined data, performing a re-storage step, wherein the step of re-storing the plurality of quick use of at least one physical page in the physical page with the plurality of quick slow physical page physical page at least a slow re-storing the predetermined data unit and the state labeled marking as a second state.
  13. 13.根据权利要求12所述的嵌入式存储器储存装置, 其中该存储器控制器更用以判断是否从该主机系统接收到一预定制造商指令,并且判断该状态标示单元的该状态, 其中仅当接收到该预定制造商指令并且该状态标示单元的该状态为该第一状态时,该存储器控制器才使用该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面来重新储存该预定数据。 13. The embedded memory storage device according to claim 12, wherein the memory controller further configured to determine whether received from the host system to a predetermined manufacturer instructions, and determines the state of the state of the marking unit, wherein only when upon receiving the instruction for the manufacturer and the predetermined state of the state unit is designated the first state, the memory controller before using the plurality of physical pages of at least one rapid rapid slow physical page physical page and the plurality of at least one slow re-storing the physical page to predetermined data.
  14. 14.根据权利要求11所述的嵌入式存储器储存装置,其中该存储器控制器更用以从一主机系统接收至少一标准指令并且判断该至少一标准指令是否属于一特殊态样, 其中仅当该至少一标准指令属于该特殊态样时,该存储器控制器才检测该状态标示单元的该状态。 14. The embedded memory storage device according to claim 11, wherein the memory controller is further configured to receive at least one standard instruction from a host system and the at least one standard instruction is determined whether a particular aspect, wherein only when the at least one standard instruction belonging to this particular aspect, the memory controller detects the state of the state before the marking unit.
  15. 15.根据权利要求9所述的嵌入式存储器储存装置,其中该存储器控制器执行来自于一主机系统的多个写入指令来同时使用该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面来重新储存该预定数据。 15. The embedded memory storage device according to claim 9, wherein the controller performs a memory from a plurality of host systems in a write command to flash simultaneously using the plurality of physical page physical page fast with at least one of the plurality of slow physical page physical page at least a slow re-storing the predetermined data.
  16. 16.根据权利要求9所述的嵌入式存储器储存装置,其中该存储器控制器将该预定数据分批地重新储存至该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面中。 16. The embedded memory storage device according to claim 9, wherein the memory controller re-store the predetermined batch data to the plurality of flash at least one physical page in the plurality of quick physical page and physical page slow at least one slow physical page.
  17. 17.根据权利要求9所述的嵌入式存储器储存装置,其中该预定数据为一映象文件或是一操作系统文件。 17. The embedded memory storage device according to claim 9, wherein the predetermined data is an image file or an operating system file.
  18. 18.根据权利要求9所述的嵌入式存储器储存装置,其中在该嵌入式存储器储存装置经过该焊接制程处理之后,将该嵌入式存储器储存装置以一焊接方式黏着至一电路基板上。 18. The embedded memory storage device according to claim 9, wherein the embedded memory in the storage device after the soldering process through the processing, the adhesion to the embedded memory storage device on a circuit substrate in a welding.
  19. 19.根据权利要求9所述的嵌入式存储器储存装置,其中该存储器控制器更用以从一主机系统接收至少一标准指令并且判断该至少一标准指令是否属于一特殊态样; 仅当该至少一标准指令属于该特殊态样时,该存储器控制器才使用该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面以重新储存该预定数据。 19. The embedded memory storage device according to claim 9, wherein the memory controller is further configured to receive at least one standard instruction from a host system and the at least one standard instruction is determined whether a particular aspect; only when the at least when a standard instruction belonging to this particular aspect, the memory controller before using the plurality of physical pages of at least one rapid rapid slow physical page and the plurality of at least one physical page physical page slow to re-storing the predetermined data.
  20. 20.—种用于嵌入式存储器储存装置的数据管理方法,其中该嵌入式存储器储存装置具有多个物理区块并且该多个物理区块具有多个快速物理页面与多个慢速物理页面,该数据管理方法包括: 经过一焊接制程处理该嵌入式存储器储存装置; 判断该嵌入式存储器储存装置的一预定数据是否只被储存于该些快速物理页面中至少一个的快速物理页面中;以及倘若该预定数据只被储存于该些快速物理页面中至少一个的快速物理页面中时,重新储存该预定数据到该些快速物理页面中至少一个的快速物理页面与该些慢速物理页面中至少一个的慢速物理页面中。 20.- kinds of data management method for embedded memory storage device, wherein the embedded memory storage means having a plurality of physical blocks and physical blocks of the plurality of physical pages having a plurality of fast and slow plurality of physical pages, the data management method comprising: the embedded memory storage device via a welding process process; determining whether a predetermined data storage means of the embedded memory is only stored in the plurality of physical pages quick flash of at least one physical page; and if the predetermined data is only stored in the plurality of flash at least one physical page physical page fast re-storing the predetermined data to the plurality of flash at least one physical page in the physical page with the plurality of quick slow at least one physical page slow physical page.
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