CN102591738B - Data managing method, Memory Controller and in-line memory storage device - Google Patents
Data managing method, Memory Controller and in-line memory storage device Download PDFInfo
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Abstract
The present invention proposes a kind of data managing method, Memory Controller and in-line memory storage device, and this in-line memory storage device has multiple physical blocks and each physical blocks has multiple rapid physical page and multiple physical page at a slow speed.This method comprises the state that detected state indicates unit.This method also comprises when the state that state indicates unit is marked as the first state, automatically read stored data, use the in-line memory storage device rapid physical page and physical page at a slow speed again to store these data and status indication state being indicated unit is the second state.Base this, effectively can use the storage area of in-line memory storage device.
Description
Technical field
The invention relates to a kind of data managing method, and relate to Memory Controller and the in-line memory storage device of a kind of data managing method for in-line memory storage device and use the method especially.
Background technology
Digital camera, mobile phone and MP3 are very rapid in growth over the years, and the demand of consumer to Storage Media is also increased rapidly.Due to type nonvolatile (rewritablenon-volatile memory) there is data non-volatile, power saving, the characteristic such as volume is little, mechanical structure, read or write speed are fast, be most suitable for this little electronic product.The embedded multi-media card (embeded Multi Media Card, eMMC) being widely used in mobile phone is exactly a kind of storage device using flash memory as Storage Media.Therefore, flash memory industry becomes a ring quite popular in electronic industry in recent years.
In general, the embedded multi-media card (embeded Multi Media Card, eMMC) for electronic product is the image file (image file) for burning electronic product, such as, and operating system.Particularly, for the ease of a large amount of production, image file can be burnt in embedded multi-media card manufacture in advance, and the embedded multi-media card prestoring image file afterwards just can be soldered on the circuit substrate of electronic product.
In flash memory module, data identify according to electric charge stored in storage unit.Such as, but under the environment that some is more special to storer, when welding, its high temperature can impact electric charge stored in storage unit (such as, leaking electricity).Therefore, therefore the data being pre-stored in embedded multi-media card may make a mistake.
Summary of the invention
The invention provides a kind of data managing method, Memory Controller and in-line memory storage device, it can storage data again, effectively to use the storage area of in-line memory storage device.
The invention provides a kind of data managing method, it can avoid losing the data being pre-stored in in-line memory storage device because of welding.
The invention provides a kind of Memory Controller and in-line memory storage device, the writing mechanism performed by it can prevent the Missing data being pre-stored in in-line memory storage device.
The invention provides a kind of data managing method for in-line memory storage device, wherein this in-line memory storage device has multiple physical blocks and each physical blocks has multiple rapid physical page and multiple physical page at a slow speed.Notebook data management method comprises the state that detection one state indicates unit, wherein when only the rapid physical page is used to storage one data, the state that this state indicates unit is marked as the first state, and when this little rapid physical page is with when physical page is all used to storage data at a slow speed, the state that state indicates unit is marked as the second state.Notebook data management method also comprises when the state that state indicates unit is marked as the first state, automatically read stored data, use this little rapid physical page and physical page at a slow speed again to store these data and status indication state being indicated unit is the second state.
In one embodiment of this invention, above-mentioned data managing method, also comprises: receive at least one stereotyped command from host computer system; Judge whether this stereotyped command belongs to a particular aspects; And only when this stereotyped command belongs to particular aspects, just detect the state that above-mentioned state indicates unit.
In one embodiment of this invention, the step using at least part of rapid physical page and physical page at a slow speed again to store above-mentioned data while above-mentioned comprises: by performs the multiple write instructions coming from host computer system use simultaneously at least part of rapid physical page and at a slow speed physical page again store above-mentioned data.
Exemplary embodiment of the present invention proposes a kind of Memory Controller, for being configured in manage the reproducible nonvolatile memorizer module of this in-line memory storage device in in-line memory storage device, wherein this reproducible nonvolatile memorizer module has multiple physical blocks and each physical blocks has multiple rapid physical page and multiple physical page at a slow speed.This Memory Controller comprises host interface, memory interface and memory management circuitry.Host interface is in order to be coupled to a host computer system.Memory interface is in order to couple so far reproducible nonvolatile memorizer module.Memory management circuitry couples so far host interface and memory interface.At this, this memory management circuitry indicates the state of unit in order to detected state, and wherein when only this little rapid physical page is used to storage one data, this state that this state indicates unit is marked as one first state.In addition, wherein when the state that state indicates unit is marked as the first state, memory management circuitry automatically reads stored data, uses this little rapid physical page and physical page at a slow speed again to store these data and status indication state being indicated unit is the second state.
In one embodiment of this invention, above-mentioned memory management circuitry receives at least one stereotyped command from host computer system and judges whether this stereotyped command belongs to a particular aspects.Further, only when this stereotyped command belongs to this particular aspects, above-mentioned memory management circuitry just detects the state that above-mentioned state indicates unit.
In one embodiment of this invention, above-mentioned memory management circuitry uses at least part of rapid physical page and physical page at a slow speed again to store above-mentioned data by performing the multiple write instructions coming from host computer system simultaneously.
Exemplary embodiment of the present invention proposes a kind of in-line memory storage device, and it comprises connector, reproducible nonvolatile memorizer module and Memory Controller.Connector is in order to be coupled to host computer system.Reproducible nonvolatile memorizer module has multiple physical blocks and each physical blocks has multiple rapid physical page and physical page at a slow speed.Memory Controller couples so far connector and reproducible nonvolatile memorizer module.At this, Memory Controller indicates the state of unit in order to detected state, and wherein when only this little rapid physical page is used to storage one data, this state that this state indicates unit is marked as one first state.In addition, wherein when the state that state indicates unit is marked as the first state, Memory Controller automatically reads stored data, uses this little rapid physical page and physical page at a slow speed again to store these data and status indication state being indicated unit is the second state.
In one embodiment of this invention, above-mentioned Memory Controller receives at least one stereotyped command from host computer system and judges whether this stereotyped command belongs to a particular aspects.Further, only when this stereotyped command belongs to this particular aspects, above-mentioned Memory Controller just detects the state that above-mentioned state indicates unit.
In one embodiment of this invention, above-mentioned Memory Controller uses at least part of rapid physical page and physical page at a slow speed again to store above-mentioned data by performing the multiple write instructions coming from host computer system simultaneously.
Exemplary embodiment of the present invention proposes a kind of data managing method, it is lost for preventing the tentation data in an in-line memory storage device, and wherein this in-line memory storage device has multiple physical blocks and each physical blocks has multiple rapid physical page and multiple physical page at a slow speed.Originally prevent Missing data method from comprising: burning step and again storing step.Burning step is in order to only to use the rapid physical page of in-line memory storage device to store this tentation data and status indication state being indicated unit is the first state, and wherein this state indicates unit is be stored in in-line memory storage device.Again storing step is in order to use the rapid physical page of in-line memory storage device and physical page at a slow speed again to store this tentation data and status indication state being indicated unit is the second state.
In one embodiment of this invention, above-mentioned data managing method also comprises: state state being indicated unit is initially labeled as original state; Judge whether to receive the instruction of predetermined manufacturer from host computer system; Judge that this state indicates whether the state of unit is original state; And only when receiving the instruction of predetermined manufacturer and the state of this state sign unit is original state, just perform above-mentioned burning step.
In one embodiment of this invention, above-mentioned data managing method also comprises: judge whether to receive the instruction of predetermined manufacturer from host computer system; Judge that state indicates whether the state of unit is the first state; And only when receiving the instruction of predetermined manufacturer and the state of state sign unit is the first state, just perform above-mentioned storing step again.
In one embodiment of this invention, above-mentioned data managing method also comprises: state state being indicated unit is initially labeled as original state; At least one stereotyped command is received from host computer system; Judge whether the stereotyped command received belongs to particular aspects; Judge that state indicates whether the state of unit is original state; And only when received stereotyped command belongs to particular aspects and the state of state sign unit is original state, just perform above-mentioned burning step.
In one embodiment of this invention, above-mentioned data managing method also comprises: receive at least one stereotyped command from host computer system; Judge whether the stereotyped command received belongs to particular aspects; Judge that state indicates whether the state of unit is the first state; And only when received stereotyped command belongs to particular aspects and the state of state sign unit is the first state, just perform above-mentioned storing step again.
In one embodiment of this invention, this performs when storing step is by performing and coming from multiple write instruction of a host computer system again, with rapid physical page tentation data being stored in batches again in-line memory storage device with physical page at a slow speed.
In one embodiment of this invention, above-mentioned data managing method also comprises: in above-mentioned burning step and above-mentioned again between storing step, be adhered on a circuit substrate by in-line memory storage device with a welding manner.
In one embodiment of this invention, above-mentioned data managing method also comprises: this little physical blocks is at least grouped into a storage area and a system region, and wherein this state sign unit is stored in the physical blocks of this system region.
Exemplary embodiment of the present invention proposes a kind of Memory Controller, for being configured in manage the reproducible nonvolatile memorizer module of this in-line memory storage device in in-line memory storage device, wherein this reproducible nonvolatile memorizer module has multiple physical blocks and each physical blocks has multiple rapid physical page and multiple physical page at a slow speed.This Memory Controller comprises host interface, memory interface and memory management circuitry.Host interface is in order to be coupled to a host computer system.Memory interface is in order to couple so far reproducible nonvolatile memorizer module.Memory management circuitry couples so far host interface and memory interface.At this, this memory management circuitry is in order to only to use this little rapid physical page to store a tentation data and status indication state being indicated unit is one first state.In addition, memory management circuitry also in order to use this little rapid physical page therewith a little physical page at a slow speed again store this tentation data and this status indication state being indicated unit is the second state.Moreover it is be stored in reproducible nonvolatile memorizer module that this state is indicated unit by memory management circuitry.
In one embodiment of this invention, the state that state is indicated unit by above-mentioned memory management circuitry is initially labeled as original state.And, only when memory management circuitry receives a predetermined manufacturer instruction from host computer system and, when the state of above-mentioned state sign unit is original state, memory management circuitry just only uses this little rapid physical page to write tentation data and state to be indicated the status indication of unit for this first state.
In one embodiment of this invention, only when memory management circuitry from host computer system receive a predetermined manufacturer instruction and above-mentioned state indicates the state of unit be the first state time, above-mentioned memory management circuitry just use this little rapid physical page and at a slow speed physical page again store this tentation data and the status indication this state being indicated unit is the second state.
In one embodiment of this invention, the state that state is indicated unit by above-mentioned memory management circuitry is initially labeled as original state.And, only when memory management circuitry from host computer system receive belong at least one stereotyped command of particular aspects and the state that this state indicates unit is original state time, memory management circuitry just only uses this little rapid physical page to write above-mentioned tentation data and status indication state being indicated unit is the first state.
In one embodiment of this invention, only when memory management circuitry from host computer system receive belong at least one stereotyped command of particular aspects and the state that this state indicates unit is the first state time, above-mentioned memory management circuitry just use this little rapid physical page and at a slow speed physical page again store above-mentioned tentation data and status indication state being indicated unit is the second state.
In one embodiment of this invention, above-mentioned memory management circuitry in perform between the multiple write order periods coming from host computer system, tentation data to be stored in batches again so far a little rapid physical page with physical page at a slow speed.
In one embodiment of this invention, this little physical blocks is at least grouped into a storage area and a system region by above-mentioned memory management circuitry, and is stored in the physical blocks of system region by above-mentioned state sign unit.
Exemplary embodiment of the present invention proposes a kind of in-line memory storage device, and it comprises connector, reproducible nonvolatile memorizer module and Memory Controller.Connector is in order to be coupled to host computer system.Reproducible nonvolatile memorizer module has multiple physical blocks and each physical blocks has multiple rapid physical page and physical page at a slow speed.Memory Controller couples so far connector and reproducible nonvolatile memorizer module.At this, Memory Controller is in order to only to use this little rapid physical page to store a tentation data and status indication state being indicated unit is the first state, and wherein state is indicated unit by Memory Controller is be stored in reproducible nonvolatile memorizer module.In addition, Memory Controller is also in order to use this little rapid physical page and physical page at a slow speed again to store this tentation data and status indication state being indicated unit is the second state.
In one embodiment of this invention, the state that state is indicated unit by above-mentioned Memory Controller is initially labeled as an original state.And, wherein only when controller receives a predetermined manufacturer instruction from host computer system and this state indicates the state of unit be original state time, Memory Controller just only uses this little rapid physical page to write above-mentioned tentation data and status indication state being indicated unit is the first state.
In one embodiment of this invention, only when Memory Controller from host computer system receive a predetermined manufacturer instruction and this state indicates the state of unit be the first state time, above-mentioned Memory Controller just use this little rapid physical page and at a slow speed physical page again store above-mentioned tentation data and status indication state being indicated unit is the second state.
In one embodiment of this invention, the state that state is indicated unit by above-mentioned Memory Controller is initially labeled as original state.And, only when Memory Controller from host computer system receive belong at least one stereotyped command of particular aspects and the state that this state indicates unit is original state time, above-mentioned Memory Controller just only uses this little rapid physical page to write tentation data and the status indication this state being indicated unit is the first state.
In one embodiment of this invention, only when Memory Controller from host computer system receive belong at least one stereotyped command of particular aspects and the state that this state indicates unit is the first state time, above-mentioned Memory Controller just use this little rapid physical page and at a slow speed physical page again store above-mentioned tentation data and status indication state being indicated unit is the second state.
In one embodiment of this invention, above-mentioned Memory Controller in perform between the multiple write order periods coming from host computer system, above-mentioned tentation data to be stored in batches again so far a little rapid physical page with physical page at a slow speed.
In one embodiment of this invention, this little physical blocks is at least grouped into a storage area and a system region by above-mentioned Memory Controller, and is stored in the physical blocks of system region by above-mentioned state sign unit.
Based on above-mentioned, method, the Memory Controller of exemplary embodiment of the present invention can prevent the data be pre-stored in reproducible nonvolatile memorizer module from losing because welding with in-line memory storage device effectively.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate institute's accompanying drawings to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the electronic installation and in-line memory storage device that illustrate according to the present invention first exemplary embodiment.
Fig. 2 is the schematic block diagram illustrating the in-line memory storage device shown in Fig. 1.
Fig. 3 is the schematic diagram of the physical blocks illustrated according to the present invention first exemplary embodiment.
Fig. 4 is the schematic block diagram of the Memory Controller illustrated according to the present invention first exemplary embodiment.
Fig. 5 be according to the present invention first exemplary embodiment illustrate with the example schematic of rapid physical page storage data.
Fig. 6 be according to the present invention first exemplary embodiment illustrate with the example schematic of the rapid physical page with physical page storage data at a slow speed.
Fig. 7 is the process flow diagram of the data managing method illustrated according to the present invention first exemplary embodiment.
Fig. 8 is the process flow diagram of the data managing method illustrated according to the present invention second exemplary embodiment.
Fig. 9 is the process flow diagram of the execution burning step illustrated according to the present invention the 3rd exemplary embodiment.
Figure 10 is process flow diagram tentation data again stored in time performing write instruction illustrated according to the present invention the 3rd exemplary embodiment.
[main element label declaration]
1000: electronic installation
100: in-line memory storage device
102: connector
104: Memory Controller
106: reproducible nonvolatile memorizer module
202: memory management circuitry
204: host interface
206: memory interface
208: Error-Correcting Circuit
210: memory buffer
212: electric power management circuit
310: the rapid physical page
320: physical page at a slow speed
502,504: physical blocks
S701, S703, S705: the step of data management
S801, S803, S805, S809: the step of data management
S901, S903, S905: burning step
S1001, S1003, S1005, S1007, S1009, S1011: the step in time performing write instruction, tentation data stored again
Embodiment
The present invention proposes a kind of data managing method, and it can rearrange data according to the storing state of in-line memory storage device, effectively uses the storage area of in-line memory storage device by this.In addition, tentation data to be stored in the rapid physical page with physical page at a slow speed by using imprinting mechanism tentation data to be stored in the more stable rapid physical page and re-using reduction mechanism afterwards by data managing method of the present invention again, can avoid thus being stored in the data in in-line memory storage device, because of more special environment, as welding the high temperature that produces, and produce error bit.Below will coordinate graphicly describe the present invention in detail with several exemplary embodiment.
[the first exemplary embodiment]
Fig. 1 is the electronic installation and in-line memory storage device that illustrate according to the present invention first exemplary embodiment.
Please refer to Fig. 1, electronic installation 1000 comprises microprocessor and random access memory (not illustrating).In embodiments of the present invention, in-line memory storage device 100 is embedded on the circuit substrate of electronic installation 1000.Data can be read from in-line memory storage device 100 by the running of microprocessor and random access memory or data are write in in-line memory storage device 100.Such as, electronic installation 1000 is intelligent mobile phone and in-line memory storage device 100 is the operating system storing this intelligent mobile phone.
In this exemplary embodiment, in-line memory storage device 100 can be embedded multi-media card (Embedded Multi Media Card, eMMC).But, it must be appreciated, the present invention is not limited thereto, in another exemplary embodiment of the present invention, in-line memory storage device 100 also can be embedded-type security digital card (Embeded Secure Digital, eSD) or other embedded non-volatile memory storage device.
Fig. 2 is the schematic block diagram illustrating the in-line memory storage device shown in Fig. 1.
Please refer to Fig. 2, in-line memory storage device 100 comprises connector 102, Memory Controller 104 and reproducible nonvolatile memorizer module 106.In an exemplary embodiment, this connector 102, Memory Controller 104 can all be packaged in a chips with reproducible nonvolatile memorizer module 106.
In this exemplary embodiment, connector 102 is compatible with MMC standard.But it must be appreciated, the present invention is not limited thereto, connector 102 can also be meet SD standard or other embedded interface standard.
Memory Controller 104 in order to perform in the form of hardware or multiple logic gate of form of firmware implementation or steering order, and according to the instruction of electronic installation 1000 carry out in reproducible nonvolatile memorizer module 106 data write, read and the running such as to erase.
Reproducible nonvolatile memorizer module 106 is coupled to Memory Controller 104, and in order to data that stored electrons device 1000 writes.Reproducible nonvolatile memorizer module 106 has multiple physical blocks.Each physical blocks has multiple physical page respectively, and the physical page wherein belonging to same physical blocks can be written independently and side by side be erased.In more detail, physical blocks is the least unit of erasing.That is, each physical blocks contain minimal amount in the lump by the storage unit of erasing.Physical page is the minimum unit of programming.That is, physical page is the minimum unit of write data.But it must be appreciated, in another exemplary embodiment of the present invention, the least unit of write data can also be physical sector or other size.Such as, each physical blocks is made up of 128 physical pages.But it must be appreciated, the present invention is not limited thereto, each physical blocks can be made up of 256 physical pages or other any physical page.Each physical page comprises user's data (user data) position district and redundancy (redundancy) position district.User's data bit district is in order to store the data of user, and redundant digit district is in order to the data (such as, error-correcting code) of stocking system.
In this exemplary embodiment, reproducible nonvolatile memorizer module 106 is multi-level cell memory (Multi Level Cell, MLC) NAND flash memory module.Specifically, NAND flash memory module can divide into MLC NAND flash memory module and single-order layer storage unit (Single-Level Cell, SLC) NAND flash memory module according to the storable data bits of each storage unit.Each storage unit of SLC NAND flash memory module only can store 1 bit data, and each storage unit of MLC NAND flash memory module can store the bit data of more than at least 2.Such as, for 4 rank storage unit NAND flash memory modules, each storage unit can store 2 bit data (that is, " 11 ", " 10 ", " 00 " and " 01 ").Base this, 2 stages can be divided into the write of 4 rank storage unit flash memory modules.First stage is the write of lower page (lowerpage), and subordinate phase is the write of the upper page (upper page), and wherein the writing speed of lower page can faster than the upper page.Therefore, the physical page of MLC NAND flash memory module can be divided into physical page (that is, the upper page) and the rapid physical page (that is, lower page) at a slow speed.Particularly, compared to the upper page, the storage fiduciary level of lower page is higher.Similarly, in the case of 8 rank storage unit NAND flash memory modules or 16 rank storage unit NAND flash memory modules, storage unit can store more long numeric data and can so that more the multistage writes.At this, physical page the fastest for writing speed is called lower page, the slower page of other writing speed is referred to as the page.Such as, the upper page comprises multiple pages with different writing speed.In addition, in other embodiments, the upper page also can be the slowest page of writing speed, or writing speed is the slowest and partial write speed faster than the page of the slowest page of writing speed.Such as, in 8 rank storage unit NAND flash memory modules, lower page is the fastest page time fast with writing speed of writing speed, the upper page be then writing speed the most slowly and the secondary slow page of writing speed.
Fig. 3 is the schematic diagram of the physical blocks illustrated according to the present invention first exemplary embodiment.
Please refer to Fig. 3, physical page in the physical blocks of 4 rank storage unit flash memory modules can divide into the multiple rapid physical pages 310 and multiple physical page at a slow speed 320 according to its write diagnostics, wherein write data to the rapid physical page 310 speed faster than write data to the speed of physical page 320 at a slow speed and data storing in the fiduciary level of the rapid physical page 310 higher than the fiduciary level of physical page 320 at a slow speed.In addition, data must be written in order according to the numbering of physical page.
Fig. 4 is the schematic block diagram of the Memory Controller illustrated according to the present invention first exemplary embodiment.
Please refer to Fig. 4, Memory Controller 104 comprises memory management circuitry 202, host interface 204 and memory interface 206.
Memory management circuitry 202 is in order to the overall operation of control store controller 104.Such as, memory management circuitry 202 by multiple control module (such as, writing module, read module, module etc. of erasing) formed, and when memorizer memory devices 100 operates, this little module of memory management circuitry 202 can according to the instruction of electronic installation 1000 to reproducible nonvolatile memorizer module 106 carry out data write, read and the running such as to erase.
In this exemplary embodiment, the control module of memory management circuitry 202 carrys out implementation with program.Such as, memory management circuitry 202 has microprocessor unit (not illustrating) and ROM (read-only memory) (not illustrating), and this little steering order is burned onto in this ROM (read-only memory).At this, this slightly program be also called firmware.When memorizer memory devices 100 operates, this slightly program can by microprocessor unit perform to carry out data write, read and the running such as to erase.
In another exemplary embodiment of the present invention, above-mentioned microprogram also can be stored in the specific region (such as, being exclusively used in the system region of storage system data in memory module) of reproducible nonvolatile memorizer module 106.In addition, memory management circuitry 202 has microprocessor unit (not illustrating), ROM (read-only memory) (not illustrating) and random access memory (not illustrating).Particularly, this ROM (read-only memory) has driving code, and when Memory Controller 104 is enabled, microprocessor unit first can perform this and drive code section to be loaded in the random access memory of memory management circuitry 202 by the microprogram be stored in reproducible nonvolatile memorizer module 106.Afterwards, microprocessor unit can operate this microprogram with carry out data write, read and the running such as to erase.In addition, in another exemplary embodiment of the present invention, the control module of memory management circuitry 202 example, in hardware can also carry out implementation.
Host interface logic interface 204 is coupled to memory management circuitry 202 and in order to receive and to identify the instruction that transmits of electronic installation 1000 and data.That is, the instruction that transmits of electronic installation 1000 and data can be sent to memory management circuitry 202 by host interface logic interface 204.In this exemplary embodiment, host interface logic interface 204 is compatible with eMMC standard.But it must be appreciated and the present invention is not limited thereto, host interface logic interface 204 can also be compatible with eSD standard or other data transmission standard be applicable to.
Memory interface 206 is coupled to memory management circuitry 202 and in order to access reproducible nonvolatile memorizer module 106.That is, the data for writing to reproducible nonvolatile memorizer module 106 can be converted to the receptible form of reproducible nonvolatile memorizer module 106 via memory interface 206.
Error-Correcting Circuit 208 is coupled to memory management circuitry 202 and in order to execution error inspection and correction program to guarantee the correctness of data.Specifically, when performing write instruction, Error-Correcting Circuit 208 can be for error-correcting code corresponding to the data generation of write, and these data can write in reproducible nonvolatile memorizer module 106 with corresponding error-correcting code by memory management circuitry 202.Afterwards, can read bug check corresponding to these data and correcting code when memory management circuitry 202 reads data from reproducible nonvolatile memorizer module 106, and Error-Correcting Circuit 208 can according to this bug check and correcting code to read data execution error inspection and correction program simultaneously.
In the present invention one exemplary embodiment, Memory Controller 104 also comprises memory buffer 210.Memory buffer 210 is coupled to memory management circuitry 202 and comes from the data and instruction of electronic installation 1000 in order to temporary or come from the data of reproducible nonvolatile memorizer module 106.
In the present invention one exemplary embodiment, Memory Controller 104 also comprises electric power management circuit 212.Electric power management circuit 212 is coupled to memory management circuitry 202 and power supply in order to control in-line memory storage device 100.
In this exemplary embodiment, memory management circuitry 202 can indicate unit (such as, a flag working storage) and the state of this state sign unit is initially labeled as original state by storing state in reproducible nonvolatile memorizer module 106.Such as, in exemplary embodiment of the present invention, physical blocks can be grouped into storage area and system region and state is indicated unit and be stored in the physical blocks of system region by memory management circuitry 202.The physical blocks of storage area is in order to store user's data (such as, the data that electronic installation accesses) and the physical blocks of system region in order to store the system data (such as, the number of physical blocks, the number etc. of physical page) of in-line memory storage device 100.
Particularly, when only using the rapid physical page of physical blocks to carry out storage data, the status indication that this state can be indicated unit by memory management circuitry 202 is the first state.
Fig. 5 is the schematic diagram only carrying out storage data with the rapid physical page illustrated according to the present invention first exemplary embodiment, and the size of data for convenience of description stored by this hypothesis equals the size of a physical blocks and reproducible nonvolatile memorizer module 106 is made up of physical blocks 502 and physical blocks 504.
Please refer to Fig. 5, the data that should be stored in the physical page at a slow speed of physical blocks 502 can be stored in the rapid physical page of physical blocks 504 originally.Because these data are stored in (shown in dotted line) in the rapid physical page, therefore, data can not easily make a mistake position and losing.
In addition, when normally using the rapid physical page of physical blocks and physical page carrys out storage data at a slow speed, the status indication that this state can be indicated unit by memory management circuitry 202 is the second state.
Fig. 6 be illustrate according to the present invention first exemplary embodiment carry out the schematic diagram of storage data with the rapid physical page and physical page at a slow speed.
Please refer to Fig. 6, memory management circuitry 202 normally uses the rapid physical page of reproducible nonvolatile memorizer module 106 and physical page at a slow speed to carry out storage data (shown in dotted line).Because the rapid physical page and physical page at a slow speed all can be used for storage data, therefore, the storage area of in-line memory storage device 100 can be substantially used.At this, normally use the rapid physical page of reproducible nonvolatile memorizer module 106 and physical page at a slow speed to carry out storage data and be also called normal storage mechanism.
In this exemplary embodiment, when receiving the instruction of predetermined manufacturer (vender command) from electronic installation 1000 or other external host, memory management circuitry 202 meeting detected state indicates the state of unit.If when the state of state sign unit is marked as the first state, memory management circuitry 202 can automatically read the data be originally stored in in-line memory storage device 100, uses the rapid physical page of in-line memory storage device 100 and physical page at a slow speed to carry out again storage data and status indication state being indicated unit is the second state.That is, when receiving predetermined manufacturer's instruction, data, automatically according to the state of in-line memory storage device 100, store efficiently to use storage area by memory management circuitry 202 again.
It is worth mentioning that, at this, the instruction of predetermined manufacturer is the instruction designing to start again storage mechanism in advance.But the present invention is not limited thereto, in another exemplary embodiment of the present invention, memory management circuitry 202 also can start storage mechanism again according to the information in stereotyped command.Such as, when host computer system assigns several write instruction continuously, memory management circuitry 202 can start storage mechanism again.Or when comprising special parameter in write instruction, memory management circuitry 202 can start storage mechanism again.Or when host computer system use is reserved to the stereotyped command of user's self-defining, memory management circuitry 202 can start storage mechanism again.
Fig. 7 is the process flow diagram of the data managing method illustrated according to the present invention first exemplary embodiment.
Please refer to Fig. 7, in step S701, memory management circuitry 202 can judge whether to receive the instruction of predetermined manufacturer.If when receiving predetermined manufacturer's instruction, in step S703, memory management circuitry 202 can judge whether the state of state sign unit is marked as the first state.
If when state indicates that the state of unit is non-is marked as the first state, the flow process of Fig. 7 can be moved to end.If when the state of state sign unit is marked as the first state, in step S705, data that memory management circuitry 202 can use the rapid physical page of reproducible nonvolatile memorizer module 106 and physical page at a slow speed again to store originally to be stored in the rapid physical page of reproducible nonvolatile memorizer module and status indication state being indicated unit is the second state.
[the second exemplary embodiment]
The structural nature of the in-line memory storage device of the second exemplary embodiment is the in-line memory storage device being same as the first exemplary embodiment, the difference part will coordinating the hardware element of Fig. 2 and Fig. 3 that the second exemplary embodiment and the first exemplary embodiment are described below.
In the second exemplary embodiment, in-line memory storage device 100 is adhered on the circuit substrate of electronic installation 1000 with welding manner, to couple with the microprocessor of electronic installation 1000.Further, before welding, tentation data (such as, for the operating system image file of electronic installation 1000) can be stored in reproducible nonvolatile memorizer module 106 by an imprinting mechanism.
In record mechanism at the moment, the Memory Controller 104 of in-line memory storage device 100 only uses the rapid physical page of reproducible nonvolatile memorizer module 106 to store tentation data.Specifically, when receiving predetermined manufacturer's instruction from host computer system (not illustrating), memory management circuitry 202 meeting status recognition indicates the state of unit.If state indicates the state of unit when being marked as original state, memory management circuitry 202 can only use the rapid physical page of reproducible nonvolatile memorizer module 106 to store host computer system for the tentation data (as shown in Figure 5) of write and status indication state being indicated unit is the first state.Take this, because these data are stored in the rapid physical page, it is when the welding by work table, and its data can comparatively be stablized and not be destroyed.
In addition, in this exemplary embodiment, after this in-line memory storage device 100 is in a normal temperature or more stable working environment (such as, after have passed a welding board), tentation data can be stored in reproducible nonvolatile memorizer module 106 again by the storage mechanism again as described in the first exemplary embodiment.That is, memory management circuitry 202 tentation data (as shown in Figure 6) that the rapid physical page of reproducible nonvolatile memorizer module 106 and physical page at a slow speed can be used again to store originally be stored in the rapid physical page of reproducible nonvolatile memorizer module 106 and status indication state being indicated unit is the second state.
As mentioned above, the fiduciary level of Fast Page is higher than the page at a slow speed, therefore, only carry out storage data with Fast Page before welding, effectively can reduce in the process of circuit substrate in-line memory storage device 100 being soldered to electronic installation 1000, be stored in the data Yin Gaowen of in-line memory storage device 100 and the chance of position of making a mistake.Then, after being welded, using Fast Page and the page at a slow speed again to store original stored data can make the storage area of in-line memory storage device 100 more effectively be used.
It is worth mentioning that, at this, the instruction of predetermined manufacturer designs in advance to start imprinting instruction that is machine-processed and storage mechanism again.But the present invention is not limited thereto, in another exemplary embodiment of the present invention, memory management circuitry 202 also can start imprinting mechanism and storage mechanism again according to the information in stereotyped command.Such as, when host computer system assigns several write instruction continuously, memory management circuitry 202 can think that it belongs to a particular aspects preset and therefore starts imprinting mechanism and storage mechanism again.Or, when write in instruction comprise special parameter time, memory management circuitry 202 can start imprinting mechanism and storage mechanism again.Or, when host computer system use be reserved to the stereotyped command of user's self-defining time, memory management circuitry 202 can start imprinting mechanism and storage mechanism again.
Fig. 8 is the process flow diagram of the data managing method illustrated according to the present invention first exemplary embodiment.
Please refer to Fig. 8, in step S801, can judge whether to receive the instruction of predetermined manufacturer.
If when not receiving predetermined manufacturer's instruction, then terminate the flow process of Fig. 8.
If when receiving predetermined manufacturer's instruction, in step S803, can judge whether the state of state sign unit is original state.
If state indicates the state of unit when being original state, in step S805, the rapid physical page of in-line memory storage device is only used to store tentation data and status indication state being indicated unit is the first state.At this, step S805 is also called burning step.
If it is non-when be original state that state indicates the state of unit, in step S807, can judge whether the state of state sign unit is the first state.
If when the state of state sign unit is the first state, in step S809, the tentation data using the rapid physical page of in-line memory storage device and physical page at a slow speed again to store originally to be stored in in-line memory storage device and status indication state being indicated unit is the second state.At this, step S809 is also known as being storing step again.
If it is non-when being the first state that state indicates the state of unit, then terminate the flow process of Fig. 8.That is, if state indicates, the state of unit is non-receives the instruction of predetermined manufacturer for original state or the first state, then received predetermined manufacturer instruction can be left in the basket.
As mentioned above, imprinting mechanism or again storage mechanism also can start according to the information in stereotyped command.Therefore, in another exemplary embodiment of the present invention, the step S801 of Fig. 8 can also judge whether to receive the stereotyped command belonging to particular aspects and replace.
[the 3rd exemplary embodiment]
Perform storing step again after being welded whole tentation data is stored in the physical blocks of in-line memory storage device again according to the data managing method of the second exemplary embodiment.And the data managing method of the 3rd exemplary embodiment the tentation data be stored in multiple rapid physical page is again stored in batches when follow-up execution write instruction, and can not immediately all tentation datas be stored in the physical blocks of in-line memory storage device again after being welded.The structural nature of the in-line memory storage device of the 3rd exemplary embodiment is the in-line memory storage device being same as the first exemplary embodiment, the difference part will coordinating the hardware element of Fig. 2 and Fig. 3 that the second exemplary embodiment and the first exemplary embodiment are described below.
Similarly, in the 3rd exemplary embodiment, when Memory Controller 104 receives the instruction of predetermined manufacturer and state indicates the state of unit is original state, memory management circuitry 202 can only use the rapid physical page of reproducible nonvolatile memorizer module 106 to store tentation data (such as, as shown in Figure 5) and status indication state being indicated unit is the first state.
Afterwards, when Memory Controller 104 receive from electronic installation 1000 write instruction time or starting-up signal time, memory management circuitry 202 can judge whether store the tentation data write with imprinting mechanism in the physical page for write, wherein, the mode of judgement can be such as by a tentation data reduction table.If for write physical page in stored with imprinting mechanism write tentation data time, memory management circuitry 202 can by execution write instruction while arrange this tentation data in the lump.That is, memory management circuitry 202 can use the rapid physical page and physical page at a slow speed again to store tentation data when performing write instruction.That is, memory management circuitry 202 be follow-up need write data time just in batches the tentation data write with imprinting mechanism is stored in physical blocks again.
Particularly, in the 3rd exemplary embodiment, memory management circuitry 202 can be set up a tentation data reduction table and record in order to store with the physical page of the tentation data of imprinting mechanism write.Further, when the tentation data being stored in a certain physical page is stored again by use normal storage mechanism, memory management circuitry 202 can record this information in this tentation data reduction table.That is, memory management circuitry 202 can store not with the tentation data that normal storage mechanism stores according to tentation data reduction table again when performing write instruction.
Fig. 9 is the process flow diagram of the execution burning step illustrated according to the present invention the 3rd exemplary embodiment.
Please refer to Fig. 9, in step S901, can judge whether to receive the instruction of predetermined manufacturer.
If when not receiving predetermined manufacturer's instruction, then terminate the flow process of Fig. 9.
If when receiving predetermined manufacturer's instruction, in step S903, can judge whether the state of state sign unit is original state.
If state indicates the state of unit when being original state, in step S905, the rapid physical page of in-line memory storage device is only used to store tentation data and status indication state being indicated unit is the first state.At this, step S905 is also called burning step.
Figure 10 is process flow diagram tentation data again stored in time performing write instruction illustrated according to the present invention the 3rd exemplary embodiment.
Please refer to Figure 10, after receiving write instruction, in step S1001, can judge whether the state of state sign unit is the first state.
If when the state of state sign unit is the first state, in the step s 1003, according to tentation data reduction table, memory management circuitry 202 meeting judges whether physical page of this write instruction corresponding stores with the tentation data of imprinting mechanism write (that is, not yet to reduce the machine-processed tentation data again stored of normal storage).
If the physical page of this write instruction corresponding stores with the tentation data of imprinting mechanism write, in step S1005, perform this write instruction and use normal storage mechanism again to store this tentation data simultaneously.
If the physical page of this write instruction corresponding does not store with the tentation data of imprinting mechanism write, in step S1007, perform this write instruction.
Afterwards, in step S1009, can judge allly whether all used normal storage mechanism again to store with the tentation data stored by imprinting mechanism according to tentation data reduction table.
If all used normal storage mechanism again to store all with the tentation data stored by imprinting mechanism, in step S1011, status indication state being indicated unit is the second state.Afterwards, the flow process of Figure 10 is terminated.
It is worth mentioning that, in another exemplary embodiment of the present invention, memory management circuitry 202 also can need performing on average the smearing damage (wear-leveling) program of physical blocks again to store the tentation data write with imprinting mechanism during moving data in the lump.Therefore, in another exemplary embodiment of the present invention, the step S1001 of Figure 10 and step S1003 can also judge whether to perform and on average smear damage program and judge whether the data for moving are that the tentation data write with imprinting mechanism replaces.At this, on average smear the technology that damage program is well known to those skilled in the art, be not described in detail at this.
Comprehensively above-mentioned, the data managing method of exemplary embodiment of the present invention the data only using the rapid physical page to store to be used the rapid physical page and physical page at a slow speed again to store by storage mechanism again, base this, effectively can use the storage area of in-line memory storage device.In addition, in exemplary embodiment of the present invention, imprinting mechanism only uses the comparatively stable rapid physical page in in-line memory storage device to store tentation data.Afterwards, effectively can avoid Yin Gaowen when in-line memory storage device is adhered on the circuit substrate of electronic installation with welding and produce error in data.Moreover after welding, by above-mentioned reduction normal storage mechanism, in-line memory storage device normally can carry out the access of data according to the instruction of electronic installation.Base this, data managing method, the Memory Controller of exemplary embodiment of the present invention can be avoided because welding produced Missing data effectively with in-line memory storage device.
Although the present invention discloses as above with embodiment; so itself and be not used to limit the present invention; have in any art and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on the appended right person of defining.
Claims (20)
1. the data managing method for in-line memory storage device, wherein this in-line memory storage device has multiple physical blocks and the plurality of physical blocks has multiple rapid physical page and multiple physical page at a slow speed, and this data managing method comprises:
The state that one state indicates unit is initially labeled as an original state, and wherein this state indicates unit is be stored in this in-line memory storage device;
Judge whether to receive predetermined manufacturer instruction from a host computer system;
If receive this predetermined manufacturer instruction, detect this state that this state indicates unit;
If receive this predetermined manufacturer instruction and this state indicates this state of unit is this original state, perform a burning step, wherein this burning step is one first state in order to only to use the rapid physical page of at least one in those rapid physical pages of this in-line memory storage device to store a tentation data and this state is indicated this status indication of unit, and wherein this burning step can complete before a welding fabrication process at this in-line memory storage device; And
At this in-line memory storage device after this welding fabrication process, again to store in this tentation data to those rapid physical pages at least one the rapid physical page and those are at a slow speed in physical page at least one physical page at a slow speed.
2. data managing method according to claim 1, more comprises:
Detect this state and indicate this state of unit, wherein when in only those rapid physical pages, the rapid physical page of at least one is used to store this tentation data, this state that this state indicates unit is marked as this first state.
3. data managing method according to claim 2, more comprises:
Wherein when this state that this state indicates unit is marked as this first state, read this tentation data, perform a storing step again, wherein this again storing step to use in those rapid physical pages simultaneously at least one the rapid physical page and those at a slow speed in physical page the physical page at a slow speed of at least one again store this tentation data; And
It is one second state that this state is indicated the status indication of unit.
4. data managing method according to claim 3, more comprises:
Judge whether to receive predetermined manufacturer instruction from this host computer system;
Judge that this state indicates this state of unit; And
Only when receiving this predetermined manufacturer instruction and this state of this state sign unit is this first state, just perform this storing step again.
5. data managing method according to claim 2, more comprises:
At least one stereotyped command is received from a host computer system;
Judge whether this at least one stereotyped command belongs to a particular aspects;
Only when this at least one stereotyped command belongs to this particular aspects, just detect this state that this state indicates unit.
6. data managing method according to claim 1, wherein to store in this tentation data to those rapid physical pages at least one the rapid physical page and those steps at a slow speed in physical page at least one physical page at a slow speed comprise again:
Perform the multiple write instructions coming from a host computer system to use in those rapid physical pages simultaneously at least one the rapid physical page and those at a slow speed in physical page the physical page at a slow speed of at least one again store this tentation data.
7. data managing method according to claim 6, more comprises:
This tentation data to be stored in batches again in those rapid physical pages at least one the rapid physical page and those are at a slow speed in physical page at least one physical page at a slow speed.
8. data managing method according to claim 1, wherein this tentation data is an image file or an operating system file.
9. an in-line memory storage device, comprising:
A connector, in order to be coupled to a host computer system;
One reproducible nonvolatile memorizer module, has multiple physical blocks and each the plurality of physical blocks has multiple rapid physical page and physical page at a slow speed; And
One Memory Controller, is coupled to this connector and this reproducible nonvolatile memorizer module,
Wherein the state of this Memory Controller more in order to a state to be indicated unit is initially labeled as an original state, and wherein this state indicates unit is be stored in this in-line memory storage device,
Wherein this Memory Controller is more in order to judge whether to receive predetermined manufacturer instruction from a host computer system, and judges that this state indicates this state of unit,
Wherein only when receiving this predetermined manufacturer instruction and this state of this state sign unit is this original state, this Memory Controller just only uses the rapid physical page of at least one in those rapid physical pages to store a tentation data, wherein the above-mentioned rapid physical page of at least one that only to use in those rapid physical pages is completed before a welding fabrication process at this in-line memory storage device to store the running of this tentation data
Wherein at this in-line memory storage device after this welding fabrication process, this Memory Controller is more in order to again to store in this tentation data to those rapid physical pages at least one the rapid physical page and those are at a slow speed in physical page at least one physical page at a slow speed.
10. in-line memory storage device according to claim 9, at the above-mentioned rapid physical page of at least one that only to use in those rapid physical pages in the running storing this tentation data,
This Memory Controller is more one first state in order to this state is indicated this status indication of unit.
11. in-line memory storage devices according to claim 9,
Wherein this Memory Controller more indicates this state of unit in order to detect this state, wherein when in only those rapid physical pages, the rapid physical page of at least one is used to store this tentation data, this state that this state indicates unit is marked as one first state.
12. in-line memory storage devices according to claim 11,
Wherein this Memory Controller is more in order to when this state that this state indicates unit is marked as this first state, read this tentation data, execution one storing step again, wherein this again storing step to use in those rapid physical pages simultaneously at least one the rapid physical page and those at a slow speed in physical page the physical page at a slow speed of at least one again store this tentation data, and the status indication this state being indicated unit is one second state.
13. in-line memory storage devices according to claim 12,
Wherein this Memory Controller is more in order to judge whether to receive predetermined manufacturer instruction from this host computer system, and judges that this state indicates this state of unit,
Wherein only when receive this predetermined manufacturer instruction and this state indicate unit this state for this first state time, this Memory Controller just to use in those rapid physical pages at least one the rapid physical page and those at a slow speed in physical page the physical page at a slow speed of at least one again store this tentation data.
14. in-line memory storage devices according to claim 11, wherein this Memory Controller is more in order to receive at least one stereotyped command from a host computer system and to judge whether this at least one stereotyped command belongs to a particular aspects,
Wherein only when this at least one stereotyped command belongs to this particular aspects, this Memory Controller just detects this state that this state indicates unit.
15. in-line memory storage devices according to claim 9, wherein this Memory Controller perform the multiple write instructions coming from a host computer system to use in those rapid physical pages simultaneously at least one the rapid physical page and those at a slow speed in physical page the physical page at a slow speed of at least one again store this tentation data.
16. in-line memory storage devices according to claim 9, wherein this tentation data to be stored in those rapid physical pages at least one the rapid physical page and those are at a slow speed in physical page at least one physical page at a slow speed by this Memory Controller in batches again.
17. in-line memory storage devices according to claim 9, wherein this tentation data is an image file or an operating system file.
18. in-line memory storage devices according to claim 9, wherein after this in-line memory storage device passes through this welding fabrication process, are adhered to this in-line memory storage device on a circuit substrate with a welding manner.
19. in-line memory storage devices according to claim 9, wherein this Memory Controller is more in order to receive at least one stereotyped command from a host computer system and to judge whether this at least one stereotyped command belongs to a particular aspects;
Only when this at least one stereotyped command belongs to this particular aspects, this Memory Controller just to use in those rapid physical pages at least one the rapid physical page and those at a slow speed in physical page the physical page at a slow speed of at least one again to store this tentation data.
20. 1 kinds of data managing methods for in-line memory storage device, wherein this in-line memory storage device has multiple physical blocks and the plurality of physical blocks has multiple rapid physical page and multiple physical page at a slow speed, and this data managing method comprises:
Through this in-line memory storage device of welding fabrication process;
Judge whether a tentation data of this in-line memory storage device is only stored in those rapid physical pages in the rapid physical page of at least one; And
If when this tentation data to be only stored in those rapid physical pages in the rapid physical page of at least one, again to store in this tentation data to those rapid physical pages at least one the rapid physical page and those are at a slow speed in physical page at least one physical page at a slow speed.
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| KR102039537B1 (en) * | 2013-03-15 | 2019-11-01 | 삼성전자주식회사 | Nonvolatile storage device and os image program method thereof |
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