CN102586745B - Target, and film forming apparatus having the same - Google Patents
Target, and film forming apparatus having the same Download PDFInfo
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- CN102586745B CN102586745B CN201210008545.8A CN201210008545A CN102586745B CN 102586745 B CN102586745 B CN 102586745B CN 201210008545 A CN201210008545 A CN 201210008545A CN 102586745 B CN102586745 B CN 102586745B
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- Prior art keywords
- target
- holding member
- powder
- metal oxide
- sintering
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The present invention provides a target which can reduce operating cost even being a sintering body target, and a film forming apparatus having the target. The target (25) fixed on a cooling plate (22) through a clamp (27) is a protoxide sintering body which is obtained by sintering a mixture comprising Zn powder acting as metal powder and ZnO powder which has a melting point higher than the melting point of Zn and acts as a metallic oxide at a sintering temperature T represented by a formula of t0 < T < t1, wherein, in the above formula, the t0 represents the melting point of the Zn, and the t1 represents the melting point or a sublimation point of the ZnO.
Description
The Japanese patent application of the application based on application on January 13rd, 2011 advocated right of priority No. 2011-5201.Quote in this manual the full content of this application.
Technical field
The present invention relates to target and possess the film deposition system of this target.
Background technology
As the target for film deposition system, the known target (being shown below " in conjunction with target ") that is for example fixed on holding member (target electrode) by the binding agent of indium etc. having as Patent Document 1.But in this combination target, if will change the target of consumption, the holding member that is bonded in target also needs together to change.Therefore, there is the problem of carrying out needing when it is changed time and cost and so on.
As the technology addressing this is that, disclose and relate to the mounting as shown in patent documentation 2 in the upper surface of holding member and be fixed on the technology of the target (being shown below " not in conjunction with target ") of holding member (target holder) by fixture.
Prior art document
Patent documentation
Patent documentation 1: Japanese kokai publication hei 8-291382 communique
Patent documentation 2: TOHKEMY 2004-193083 communique
Summary of the invention
Invent problem to be solved
But as noted above not in conjunction with in target, because target is pressed against on holding member by fixture, the part of therefore being pressed by fixture need to have can bear the intensity that this is pressed.But the weak sintered body target of general fracture-resistant is difficult to guarantee described intensity.Therefore, sintered body target adopts the combination target by be fixed on holding member by the binding agent of indium etc., and the replacing of failing to eliminate target needs the problem of time and cost and so on.
Also can reduce the target of operating cost and possess the film deposition system of this target for sintered body target even if the object of the present invention is to provide.
For the means of dealing with problems
In order to solve above-mentioned problem, target of the present invention is fixed on holding member by fixture, it is characterized in that, this target be comprise metal-powder and fusing point higher than the mixture of the metal-oxide powder of the fusing point of metal by t
0< T < t
1(wherein, in above-mentioned formula, t
0for the fusing point of metal, t
1for fusing point or the sublimation point of metal oxide) the suboxide sintered compact that forms of sintering under the sintering temperature T that represents.
This target and containing metal are not higher as fracture-resistant compared with the sintered body target of constituent, therefore can reduce the anxiety of damaging target because of pressing of fixture.Its result, even if be sintered body target, changes when target, the whole target assembly that also comprises holding member without replacing and can only change target, and can reduce operating cost.
And metal is preferably any in Zn, Sn, Pb, Bi, In, Al and Ga.Thus, under the condition of above-mentioned sintering temperature T, be easy to the mixture of sintering metal powder and metal-oxide powder.
And preferably, in this sintered compact, the outboard end in the face parallel with the contact surface that is contacted with holding member in direction is compared with central part, metallographic phase is higher for the component proportions of metal oxide.Thus, can form the fracture-resistant of the outboard end in direction in the face of target higher than the target of central part.Its result, can improve the fracture-resistant of the part of being pressed by fixture, damages the anxiety of target therefore can further reduce by fixture fixed target time.
And preferably the volume specific resistance of sintered compact is below 0.05 Ω m.Thus, while implementing sputter, the electroconductibility of target can be guaranteed to the degree for implementing the sputter based on DC sputtering or interchange sputtering method.Its result, can guarantee stable electric discharge.
And preferably the sintering relative density of sintered compact is more than 90%." sintering relative density " refers to the ratio of the volume compared with the target that there is no space with inside.One highest wisdom pore volume is more, the concavo-convex reason that particle or electric arc occur while obviously becoming sputter that becomes on target surface.In this target assembly, owing to can reducing pore volume, therefore can prevent sputter time, there is particle or electric arc, and can generate the film of high-quality.
And the metallic element that forms metal oxide can be Zn.Can be easy to form thus the ceramic target of fracture-resistant excellence.
Film deposition system of the present invention carries out film forming by film forming material contained in target is attached to substrate, it is characterized in that possessing: the fixture of vacuum vessel, the holding member that keeps above-mentioned target in vacuum vessel and fixed target and holding member.
In this film deposition system, target with compared with the sintered body target of constituent, do not guarantee fracture-resistant containing elemental metals, therefore can be fixed on holding member by fixture.Its result, even if be sintered body target, changes when target, the whole target assembly that also comprises holding member without replacing and can only change target, and can reduce operating cost.
And, preferably between holding member and target, dispose mutual opposed the heat conductivity thin film component contacting with holding member and target.Wherein, holding member is sometimes with the cooling cooling plate of contact target.Now, even if having when concavo-convex, be formed at the space between opposed mutually because conductive membrane parts fill up on the surface that target and holding member are in contact with one another, therefore also can fully guarantee the contact area of target and holding member.Its result, can obtain the good heat conductivity between target and holding member.
Invention effect
According to target of the present invention and possess the film deposition system of this target, even if be sintered body target, also can reduce operating cost.
Brief description of the drawings
Fig. 1 is the side cross-sectional, view that represents the structure of the film deposition system that comprises the related target of present embodiment.
Fig. 2 is the side cross-sectional, view of the target of presentation graphs 1.
Fig. 3 is the schema that represents the manufacture method of the related target of present embodiment.
Embodiment
Preferred embodiment the describing target involved in the present invention with reference to accompanying drawing.In addition, in explanation to identical important document or have identical function important document use same-sign, the repetitive description thereof will be omitted.
Fig. 1 is the side cross-sectional, view that represents the structure of the film deposition system that possesses the related target of present embodiment.In Fig. 1, XYZ orthogonal coordinate system is shown, Z-direction is corresponding with above-below direction.Fig. 2 is the side cross-sectional, view of the target assembly shown in presentation graphs 1.
The related target 25 of present embodiment can be applied to the so-called device that carries out film forming by sputtering method.As shown in Figure 1, this film deposition system 1 mainly possess and have vacuum vessel 10, power supply 11, air-releasing mechanism 12, gas introducing mechanism 13, substrate carrier 3 and target assembly 2.
Vacuum vessel 10 is formed by conductive material, by the additional positive voltage of power supply 11 described later.Power supply 11 is to the additional positive voltage of vacuum vessel 10, to the additional negative voltage of target 25.Air-releasing mechanism 12 comprises not shown vacuum pump and valve, and is disposed at the outside of vacuum vessel 10.Air-releasing mechanism 12 makes to be decompressed in vacuum vessel 10 the required state of film forming.Gas introducing mechanism 13 is disposed at the outside of vacuum vessel 10.Gas introducing mechanism 13 is by the gases such as the Ar using in sputter O in addition
2the gas that the oxidizing gas such as gas form is directed into vacuum vessel 10 inside.Substrate carrier 3 is installed on the inwall of vacuum vessel 10, is disposed at above-below direction (Z axis shown in Fig. 1) above and the opposed position of target assembly 2 described later.Substrate carrier 3 is the parts of fixing base 31, at the upper surface installation base plate 31 of substrate carrier 3.And substrate 31 is situated between by vacuum vessel 10 and substrate carrier 3 by the additional negative voltage of power supply 11.
Target assembly 2 is disposed at the inside of vacuum vessel 10, as shown in Figure 2, possesses and has isolator 21, cooling plate (holding member) 22, graphite flake (heat conductivity thin film component) 24, target 25, fixture 27 and target shield 28.
Isolator 21 is disposed between vacuum vessel 10 and cooling plate described later 22, and vacuum vessel 10 and the cooling plate 22 that is fixed with target 25 are insulated.Thus, guarantee the potential difference of vacuum vessel 10 and target 25.
Cooling plate 22 is situated between and is installed on the inwall of vacuum vessel 10 by isolator 21.Inside at cooling plate 22 disposes pipe arrangement (not shown) with respect to the XY plane shown in Fig. 2 with two-dimentional shape.Self carry out cooling in pipe arrangement internal flow to cooling plate 22 by cooling fluid.In addition, cooling plate 22 preferences form as the metallic substance of the heat conductivity excellence by copper or aluminium and so on.And, in the time that cooling plate 22 is made up of aluminium, if carry out alumite on this surface, more preferred.And as the cooling fluid using in cooling plate 22, preferably zero pour such as, lower than the liquid (Fluorinert or Galden etc.) of water.And pipe arrangement preference forms as the metallic substance of the heat conductivity excellence by copper or aluminium and so on.
Target 25 comprises as the ZnO of a kind of thin-film material and forms.Target 25 is set to negative electrode in film deposition system 1.And if voltage is added on outward between the vacuum vessel 10 and target 25 of setting as anode in film deposition system 1, the ion in the plasma body producing accelerates towards target 25, this ion and target 25 collide.And, adhere to or be piled up on substrate 31 by ZnO constituting atom of making to eject because of this collision etc. and form film.
Target 25 for the Zn powder as metal-powder and fusing point higher than the ZnO powder as metal-oxide powder of the fusing point of Zn at the fusing point higher than Zn and the suboxide sintered compact (pottery) that at lower than the fusing point of ZnO or the temperature of sublimation point, sintering forms.Here said suboxide refers to and comprises the oxide compound that is less than the oxygen of the quantity of being expected by the Oxidation Number of metallic element, causes oxygen damaged (compared with ceramic stoichiometric composition).This target 25 with do not uprise as fracture-resistant compared with the sintered body target of constituent containing Zn, therefore can reduce the anxiety of damaging target because of pressing of fixture.In addition, as metal-powder, not only can utilize the metal identical with the element that forms metal oxide (ZnO) (Zn), also can utilize the powder of elements such as comprising such as Sn, Pb, Bi, In, Al, Ga.And, can in the powder of metal oxide, mix metal-powder of more than two kinds and carry out sintering.
And target 25 is formed as, apart from the region of about outboard end 5mm in direction in the face of this target 25, compared with the central part of outer edge 26 and target 25, Metal Zn is higher with respect to the volume ratio (component proportions) of metal oxide ZnO.Thus, in this target 25, the fracture-resistant of outer edge 26 is than the fracture-resistant excellence of central part.Thus, the fracture-resistant as the outer edge 26 of the part of being pressed by fixture 27 can be further improved, and the anxiety of damaging target 25 when target 25 is fixed on cooling plate 22 by fixture 27 can be reduced more reliably.In addition, in this target 25, even if improve Metal Zn in outer edge 26 weight ratio (component proportions) with respect to metal oxide ZnO compared with the central part of target 25, also can obtain effect similar to the above.
And it is below 0.05 Ω m that target 25 is formed as volume specific resistance.Thus, can, by the abundant sputter of direct supply, can obtain sufficient film forming speed.And it is more than 90% that target 25 is formed as sintering relative density.Therefore, pore volume in target 25 reduces, and can suppress to be formed at the surperficial concavo-convex of target 25.Its result, can prevent particle or produce electric arc, and forms the film of high-quality.
Graphite flake 24 is a kind of heat conductivity thin film component, is disposed between cooling plate 22 and target described later 25.At this, be sometimes formed with concavo-convexly on the surface of cooling plate 22 and target 25, and sometimes form a large amount of spaces in the part of mutual face contact.Graphite flake 24 is fully guaranteed the contact area of target 25 and cooling plate 22 by filling up this space, thereby can improve the heat transfer efficiency from target 25 to cooling plate 22.
Fixture 27 is fixed on cooling plate 22 by (not shown) such as bolts.Fixture 27 presses on target 25 on cooling plate 22, and target 25 is fixed on cooling plate 22.And outer edge 26 butts of fixture 27 and target 25, press on target 25 on cooling plate 22.
Target shield 28 is fixed on the inwall of vacuum vessel 10 by insulant (not shown), and is disposed at and the opposed position, outer edge 26 of target 25.Target shield 28 prevents from forming film on exposed division (part not covered by target 25) in cooling plate 22 or fixture 27.
Then, with reference to figure 3, the manufacture method of the related target of present embodiment is described.Fig. 3 is the schema that represents the manufacture method of the related target of present embodiment.
As shown in Figure 3, in the manufacture method of the related target of present embodiment, weigh as the Zn powder of metal-powder with as the ZnO powder (step S1) of metal-oxide powder first simultaneously.The particle diameter of ZnO powder is at this moment 1～15 μ m, and the particle diameter of Zn powder is greater than the particle diameter of ZnO powder and is 10～100 μ m.
Then, Zn powder, ZnO powder and the different steel ball of external diameter are fed in bulk containers.Then, by rotation (ball milling mixing) this container mixing Zn powder and ZnO powder (step S2: mixed processes).Then, the Zn powder, ZnO powder and the steel ball that in screening step S2, mix separate steel ball (step S3) from the Zn powder that mixes and ZnO powder.
Then,, using powder filled in the carbon mold as the carbon system of forming mould plate to the Zn powder mixing and ZnO, heat also sintering (hot pressing) (step S4: sintering circuit) with the pressurization based on stamping machine simultaneously.Particularly, by have in the interior counterdie of the filling part of filling Zn powder and ZnO powder, insert in can interpolation in the outer counterdie of tubulose of counterdie.And, the Zn powder and the ZnO powder that are filled in filling part are pressurizeed from above-below direction by the stamping machine by hydraulic piston load application.And, pressurize while the coil in outside by being disposed at outer counterdie carries out high-frequency induction heating.In present embodiment, prevent that by implement sintering circuit in the argon atmospher as the ripple gas of not living the oxidation of Zn powder from becoming metal oxide ZnO (II).
The suboxide sintered compact forming is like this due to the Zn comprising as metal, therefore with only by fracture-resistant excellence compared with the sintered compact forming as the ZnO of metal oxide.
And, in the sintering circuit in step S4, meeting the sintering temperature T of following formula, with the fusing point t higher than Zn
0and lower than fusing point or the sublimation point t of ZnO
1temperature under sintering.
t
0＜T＜t
1
(in above-mentioned formula, t
0for the fusing point of Zn, t
1for fusing point or the sublimation point of ZnO)
Therefore, for example, form slot part by the inner peripheral surface at the interior counterdie that forms filling part, in sintering engineering, the Zn of melting moves to this slot part.Thus, compared with the central part of filling part, Zn more concentrates on the Outboard Sections of the filling part joining with the inner peripheral surface of interior counterdie that is formed with slot part.Thus, sintering is filled in the Zn powder of filling part and the sintered compact of ZnO powder, and in direction in face, compared with central part, the Zn of outer edge is higher with respect to the volume ratio of ZnO.Thus, in this target, can make the fracture-resistant of outer edge higher than the central part in direction in the face of target.
The target 25 of present embodiment described above be as the Zn powder of metal-powder and fusing point higher than the ZnO powder as metal oxide of the fusing point of Zn at the fusing point t higher than Zn
0and lower than fusing point or the sublimation point t of ZnO
1temperature T under the suboxide sintered compact that forms of sintering, therefore with not uprise as fracture-resistant compared with the sintered compact of constituent containing Zn.Therefore, even in the time target 25 being installed on to cooling plate 22 by fixture 27, also can reduce the anxiety of damaging target 25 because of pressing of fixture 27.Even if its result is sintered body target 25, also can in the time changing target 25, only change target 25, therefore can reduce operating cost.
In addition, as with in the past only by compared with the sintered compact of metal-oxide powder sintering, one of reason that the fracture-resistant of the target 25 of present embodiment uprises can be considered as follows., thermal conduction characteristic and characteristics of electrical conductivity generally become excellent gradually according to the order of metal oxide, suboxide, metal.Therefore, suboxide sintered body target 25 is easily transmitted in sputter heat cooling plate 22 and is easily cooled.Therefore, can think sputter time, the temperature head of target 25 diminishes and fracture-resistant raising.
Above, according to above-mentioned embodiment, the present invention is had been described in detail.But the present invention is not limited to above-mentioned embodiment.The present invention can carry out following various distortion in the scope that does not depart from its aim.
In above-mentioned embodiment, the target 25 of the suboxide sintered compact forming taking the Zn powder as sintering as metal with as the ZnO powder of metal oxide is illustrated as example, but is not limited to this.For example, can be the target of the suboxide sintered compact forming as the Zn powder of metal with as ZnO powder and the MgO powder of metal oxide as sintering.As long as meet for metal and fusing point are higher than the condition of combination of the metal oxide of the fusing point of this metal and so on, can be the suboxide sintered compact that any metal of mixing in for example Zn, Sn, Pb, Bi, In, Al and Ga and metal oxide sintering form.And, as long as be above-mentioned condition, also can be different as the element of metal and the metallic element of formation metal oxide.
And, in above-mentioned embodiment, utilize target 25 to be applied to the so-called example that carries out the device of film forming by sputtering method and be illustrated, but be not limited to this, also can be applied to the device that for example carries out film forming by RPD method (reactive plasma vapour deposition method).
Nomenclature
1-film deposition system
2-target assembly
3-substrate carrier
10-vacuum vessel
11-power supply
12-air-releasing mechanism
13-gas introducing mechanism
21-isolator
22-cooling plate
24-graphite flake
25-target
26-outer edge
27-fixture
28-target shield
31-substrate.
Claims (11)
1. a target, it is fixed on holding member by fixture, it is characterized in that,
This target is to comprise the suboxide sintered compact that metal-powder and fusing point form higher than mixture sintering under the sintering temperature T by following formulate of the metal-oxide powder of described melting point metal,
t
0＜T＜t
1，
Wherein, in above-mentioned formula, t
0for the fusing point of described metal, t
1for fusing point or the sublimation point of described metal oxide,
Outboard end in the parallel face of the contact surface with being contacted with described holding member of described sintered compact in direction is compared with central part, and described metallographic phase is higher for the component proportions of described metal oxide.
2. target as claimed in claim 1, is characterized in that,
Described metal is any in Zn, Sn, Pb, Bi, In, Al and Ga.
3. target as claimed in claim 1 or 2, is characterized in that,
The volume specific resistance of described sintered compact is below 0.05 Ω m.
4. target as claimed in claim 1 or 2, is characterized in that,
The sintering relative density of described sintered compact is more than 90%.
5. target as claimed in claim 3, is characterized in that,
The sintering relative density of described sintered compact is more than 90%.
6. target as claimed in claim 1 or 2, is characterized in that,
The metallic element that forms described metal oxide is Zn.
7. target as claimed in claim 3, is characterized in that,
The metallic element that forms described metal oxide is Zn.
8. target as claimed in claim 4, is characterized in that,
The metallic element that forms described metal oxide is Zn.
9. target as claimed in claim 5, is characterized in that,
The metallic element that forms described metal oxide is Zn.
10. a film deposition system, is characterized in that, it,, by film forming material contained in target is attached on substrate and carries out film forming, possesses:
Vacuum vessel;
The holding member of the target keep claim 1～9 in described vacuum vessel in described in any one; With
The fixture of fixing described target and described holding member.
11. film deposition systems as described in claim 10, is characterized in that,
Between described holding member and described target, dispose mutual opposed the heat conductivity thin film component contacting with described holding member and described target.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011005201A JP5460619B2 (en) | 2011-01-13 | 2011-01-13 | Target and film forming apparatus provided with the same |
| JP005201/2011 | 2011-01-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102586745A CN102586745A (en) | 2012-07-18 |
| CN102586745B true CN102586745B (en) | 2014-10-15 |
Family
ID=46475961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210008545.8A Expired - Fee Related CN102586745B (en) | 2011-01-13 | 2012-01-12 | Target, and film forming apparatus having the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5460619B2 (en) |
| KR (1) | KR101453148B1 (en) |
| CN (1) | CN102586745B (en) |
| TW (1) | TWI475122B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6233233B2 (en) * | 2013-08-06 | 2017-11-22 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
| JP7005896B2 (en) * | 2016-12-28 | 2022-01-24 | Ｊｘ金属株式会社 | Gas flow sputtering equipment and manufacturing method of sputtering target raw material |
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| CN1153225A (en) * | 1995-09-27 | 1997-07-02 | 莱博德材料有限公司 | Target of sputtering cathode for vacuum coating equipment and mfg. method thereof |
| CN101233258A (en) * | 2005-07-27 | 2008-07-30 | 出光兴产株式会社 | Sputtering target, method for producing same, and transparent conductive film |
| CN101910449A (en) * | 2007-12-28 | 2010-12-08 | 株式会社爱发科 | Method and apparatus for forming transparent conductive film |
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| JPS63270460A (en) * | 1987-04-27 | 1988-11-08 | Tanaka Kikinzoku Kogyo Kk | Sputtering target |
| JPH0196374A (en) * | 1987-10-05 | 1989-04-14 | Tanaka Kikinzoku Kogyo Kk | Clad target material for sputtering |
| JP2570832B2 (en) * | 1988-10-21 | 1997-01-16 | 三菱マテリアル株式会社 | Method for producing sintered body of good conductive indium oxide |
| JP3356470B2 (en) * | 1992-10-19 | 2002-12-16 | 三井金属鉱業株式会社 | Manufacturing method of ITO sputtering target |
| JP2001164361A (en) * | 1999-12-09 | 2001-06-19 | Mitsui Mining & Smelting Co Ltd | Sputtering target cooling structure |
| JP2004193083A (en) * | 2002-12-13 | 2004-07-08 | Nippon Sheet Glass Co Ltd | Forming method of transparent conductive film |
| JP2004197139A (en) * | 2002-12-17 | 2004-07-15 | Asahi Glass Co Ltd | Sputtering system |
| JP2008115453A (en) | 2006-10-31 | 2008-05-22 | Toyoshima Seisakusho:Kk | Zinc oxide based sputtering target |
| WO2009078329A1 (en) | 2007-12-19 | 2009-06-25 | Hitachi Metals, Ltd. | Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode |
| JP2010030824A (en) * | 2008-07-28 | 2010-02-12 | Idemitsu Kosan Co Ltd | Metal phase-containing indium oxide sintered compact and method for producing the same |
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2011
- 2011-01-13 JP JP2011005201A patent/JP5460619B2/en not_active Expired - Fee Related
-
2012
- 2012-01-12 CN CN201210008545.8A patent/CN102586745B/en not_active Expired - Fee Related
- 2012-01-12 TW TW101101244A patent/TWI475122B/en not_active IP Right Cessation
- 2012-01-13 KR KR1020120004456A patent/KR101453148B1/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1153225A (en) * | 1995-09-27 | 1997-07-02 | 莱博德材料有限公司 | Target of sputtering cathode for vacuum coating equipment and mfg. method thereof |
| CN101233258A (en) * | 2005-07-27 | 2008-07-30 | 出光兴产株式会社 | Sputtering target, method for producing same, and transparent conductive film |
| CN101910449A (en) * | 2007-12-28 | 2010-12-08 | 株式会社爱发科 | Method and apparatus for forming transparent conductive film |
Also Published As
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| JP2012144793A (en) | 2012-08-02 |
| CN102586745A (en) | 2012-07-18 |
| TWI475122B (en) | 2015-03-01 |
| JP5460619B2 (en) | 2014-04-02 |
| KR20120082374A (en) | 2012-07-23 |
| KR101453148B1 (en) | 2014-10-27 |
| TW201233828A (en) | 2012-08-16 |
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