CN102584335B - Preparation method of BaTi2O5 thin films growing in a preferred orientation - Google Patents
Preparation method of BaTi2O5 thin films growing in a preferred orientation Download PDFInfo
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- CN102584335B CN102584335B CN 201210009541 CN201210009541A CN102584335B CN 102584335 B CN102584335 B CN 102584335B CN 201210009541 CN201210009541 CN 201210009541 CN 201210009541 A CN201210009541 A CN 201210009541A CN 102584335 B CN102584335 B CN 102584335B
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- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 38
- 239000000243 solution Substances 0.000 claims abstract description 38
- 229910052788 barium Inorganic materials 0.000 claims abstract description 27
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010936 titanium Substances 0.000 claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 16
- 239000003085 diluting agent Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000002425 crystallisation Methods 0.000 claims description 16
- 230000008025 crystallization Effects 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- 238000003756 stirring Methods 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 11
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 238000005303 weighing Methods 0.000 claims description 8
- 238000000197 pyrolysis Methods 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 5
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical group [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims description 5
- 238000010790 dilution Methods 0.000 claims description 5
- 239000012895 dilution Substances 0.000 claims description 5
- 238000007669 thermal treatment Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 claims description 2
- 229910001863 barium hydroxide Inorganic materials 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 239000011259 mixed solution Substances 0.000 abstract 3
- 239000002356 single layer Substances 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 1
- XDFCIPNJCBUZJN-UHFFFAOYSA-N barium(2+) Chemical compound [Ba+2] XDFCIPNJCBUZJN-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000003980 solgel method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to relates to a preparation method of BaTi2O5 thin films growing in a preferred orientation. The preparation method comprises the steps as follows: 1) a barium source solution is manufactured; 2) the barium source solution is diluted, stirred and cooled to normal temperature, and then diluent of the barium source solution is obtained; 3) the diluent is added to a liquid state organic titanium source and stirred and mixed with the organic titanium source, and then a mixed solution containing barium and titanium is obtained; 4) the concentration of Ba2+ in the mixed solution is set as 0.05 to 0.15mol/L, the mixed solution is stirred and aged, and then precursor sol is obtained; 5) the precursor sol is dripped on a single crystal substrate and evened on a sol evening machine, a wet film is obtained and pyrolyzed, and then a noncrystalline single-layer thin film is obtained; 6) the noncrystalline single layer thin film is placed in a quick annealing furnace to be crystallized, and then a crystallized single-layer thin film is obtained; and 7) the step 5) and the step 6) are repeated for multiple times, and then the BaTi2O5 thin films are obtained. The invention has the beneficial effects that preparation method provided by the invention is convenient to implement, has low requirement for experimental equipment and requires a low cost; and the BaTi2O5 thin films have the characteristics of smooth and compact surface, component evenness and even distribution of particles.
Description
Technical field
The present invention relates to BaTi
2O
5The preparation method of film preferred orientation growth.
Background technology
In recent years, the new unit that ferroelectric material is combined with semiconducter device is widely used gradually.Along with the development of integrated ferroelectric with the semi-conductor integrated technique, the characteristic dimension of integrated technique is reducing gradually, even turns to nano-scale.Therefore ferroelectric thin-flim materials is as the basis of integrated technique, and novel high-performance ferroelectric thin-flim materials, the particularly preparation of lead-free ferroelectric film material and development seem particularly important.
BaTi
2O
5Be BaO-TiO
2High temperature in the binary system steady phase that is situated between, in recent years, Japanese scholar has carried out revising and having found the ferroelectric properties that it is new to its crystalline structure, has caused people's very big concern.In the existing report, the foreign scholar adopts floating melt (floating zone) method and has prepared BaTi
2O
5The monocrystalline block materials, b direction of principal axis specific inductivity reaches 20500 during 748K.The foreign scholar adopts method for quick cooling to prepare needle-like BaTi
2O
5Monocrystal material finds that its Curie temperature is 430 ℃, and specific inductivity is 30000 on the b direction of principal axis, and the room temperature spontaneous polarization strength is 7 μ C/cm
2, show good ferroelectric, dielectric properties.Calculate by first principle, theoretical explanation BaTi
2O
5There is ferroelectric reason, and draws BaTi
2O
5Piezoelectric response can and PbTiO
3Compare favourably.Subsequently, the foreign scholar adopts sol-gel method to prepare BaTi
2O
5Nanometer powder, and prepared the BaTi of high-compactness by discharge plasma sintering (SPS) method
2O
5Pottery.Based on BaTi
2O
5High-k and ferroelectricity all only show on the b direction of principal axis, therefore prepare the BaTi with b axle preferrel orientation
2O
5It is the prerequisite that realizes its application.With preparation BaTi
2O
5Expensive, the big difficulty of monocrystalline or orientation ceramic is compared, and the preparation of oriented film more has superiority, and this also is the integrated needs of ferro-electric device.But relevant BaTi
2O
5The research of film also seldom only has the pulsed laser deposition of employing to prepare BaTi at MgO (100) substrate at present
2O
5The report of film.Though the optimization by deposition parameter has obtained b axle preferrel orientation BaTi
2O
5Film, but its higher depositing temperature (973 K) and less specimen size (＜50mm), equipment complexity, the expensive further application that has limited film.Therefore, how more to prepare height preferred orientation, good uniformity, large-area BaTi under the low temperature
2O
5Film is the key that realizes its practicability.Sol-gel method is simple, with low cost, the method for manufacturing thin film efficiently of a kind of technology, yet there are no both at home and abroad with sol-gel method at present to prepare orientation BaTi
2O
5The report of film.The present invention adopts the BaTi of sol-gel method preparation (020) preferred orientation growth
2O
5Thin-film material.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of preparation BaTi at above-mentioned prior art
2O
5The sol-gel process of ferroelectric membranc preferred orientation growth.Used sol-gel process technology is simple, with low cost, can with the microelectronics compatibility.
The present invention solves its technical problem and adopts following technical scheme: BaTi
2O
5The preparation method of film preferred orientation growth is characterized in that including following steps:
1) takes by weighing barium source raw material, under 60～80 ℃ of water bath condition, be dissolved in the acetic acid, obtain barium source solution;
2) with adding the ethylene glycol monomethyl ether dilution in the solution of step 1) gained barium source, fully stir down at 60～80 ℃ then, be cooled to room temperature, obtain the diluent of barium source solution;
3) with step 2) diluent of gained barium source solution is added in the liquid organic titanium source, wherein counts Ba:Ti=1:2 in molar ratio, fully stirs, mixes, and obtains the mixing solutions of baric titanium;
4) in the mixing solutions of the baric titanium of step 3) gained, add ethylene glycol monomethyl ether, with Ba in the solution
2+Concentration is decided to be 0.05～0.15mol/L, stirs, and ageing is clarified, transparent precursor sol;
5) precursor sol with the step 4) gained drips on the single crystal substrate, on sol evenning machine precursor sol is spared glue, obtains wet film, in the atmosphere furnace of logical oxygen, is raised to 100～120 ℃ from room temperature then, insulation 20～40min; Be warmed up to 350～500 ℃ again, 10～40min is to carry out pyrolysis in insulation, obtains the amorphous single thin film;
6) the amorphous single thin film that step 5) is obtained places quick anneal oven, is warming up to 800～900 ℃ to carry out crystallization, and aerating oxygen is incubated 1～10min, and powered-down is cooled to room temperature and obtains the crystallization single thin film under oxygen atmosphere;
7) repeating step 5 on the crystallization single thin film) and even glue, pyrolysis and the crystallization steps of step 6) repeatedly, namely implement thermal treatment process layer by layer, obtain multilayer BaTi
2O
5Film, and realize the growth of (020) preferred orientation.
The invention has the beneficial effects as follows: 1) method provided by the invention is implemented conveniently, and less demanding to experimental installation, cost is low, the BaTi of gained
2O
5Film have surfacing densification, component evenly, characteristics such as even particle distribution; 2) the present invention by improved sol-gel method, adopt the thermal treatment process of this improvement of thermal treatment layer by layer, prepared the BaTi of (020) orientation
2O
5Film its essence is: first low temperature is the pyrolysis organism at a slow speed, and the high temperature rapid crystallization effectively overcomes the contradiction between organism pyrolysis, crystalline phase formation and the film cracking again; Thermal treatment layer by layer makes last layer crystal film provide inculating crystal layer for the crystallization of following one deck noncrystal membrane, induces the crystal indices are simple, crystal face can be lower (020) preferential nucleation, growth, thereby obtains the BaTi of (020) orientation
2O
5Film; 3) the present invention is simple to operate, and is repeatable strong, but large-scale industrial production.
Description of drawings
Fig. 1 is the BaTi of the embodiment of the invention 1 (020) orientation
2O
5The XRD figure spectrum of film;
Fig. 2 is the BaTi of the embodiment of the invention 1 (020) orientation
2O
5The AFM figure of film;
Fig. 3 is the BaTi of the embodiment of the invention 1 (020) orientation
2O
5The surperficial SEM figure of film;
Fig. 4 is the BaTi of the embodiment of the invention 1 (020) orientation
2O
5The section SEM figure of film.
Embodiment
In order to understand the present invention better, further illustrate content of the present invention below in conjunction with embodiment, but content of the present invention not only is confined to the following examples.
Embodiment 1:
1) takes by weighing the 0.01mol barium acetate, under 80 ℃ of water bath condition, be dissolved in the 10ml acetic acid, obtain barium source solution;
2) with adding the dilution of 15ml ethylene glycol monomethyl ether in the solution of step 1) gained barium source, fully stir down at 80 ℃ then, be cooled to room temperature, obtain the diluent of barium source solution;
3) Ba:Ti=1:2 in molar ratio, weighing 0.02mol tetrabutyl titanate is with step 2) diluent of gained barium source solution is added in the tetrabutyl titanate, fully stirs, mixes, and obtains the mixing solutions of baric titanium;
4) in the mixing solutions of the baric titanium of step 3) gained, add ethylene glycol monomethyl ether, with Ba in the solution
2+Concentration is decided to be 0.08mol/L, stirs 24h, and ageing 10d is clarified, transparent precursor sol;
5) precursor sol with the step 4) gained drips to Pt (111)/Ti/SiO
2On/Si the substrate, on sol evenning machine, precursor sol is spared glue 30s with the rotating speed of 5500rpm, obtain wet film, in the atmosphere furnace of logical oxygen, with the heat-up rate of 2 ℃/min, be raised to 120 ℃ from room temperature, insulation 30min, be raised to 450 ℃ with 2 ℃/min again, insulation 20min obtains the amorphous single thin film;
6) the amorphous single thin film that step 5) is obtained is raised to crystallization 5min in 850 ℃ the quick anneal oven with 50 ℃/sec, powered-down is cooled to room temperature and obtains the crystallization single thin film under oxygen atmosphere;
7) according to actual desired thickness repeating step 5) and 6) five times, the BaTi of (020) oriented growth of the about 300nm of thickness obtained
2O
5Film.
The BaTi of present embodiment gained (020) orientation
2O
5Film shown in the XRD figure spectrum of Fig. 1, is the BaTi of (020) preferred orientation growth
2O
5Film, the AFM of its pattern such as Fig. 2, homogeneous grain size, size is about 50nm; The SEM of Fig. 3, film surface is even, defectives such as flawless; The SEM profile scanning of cross-section morphology such as Fig. 4, thickness is even, and thickness is about 300nm.
Embodiment 2:
1) takes by weighing the 0.01mol barium hydroxide, under 80 ℃ of water bath condition, be dissolved in the 10ml acetic acid, obtain barium source solution;
2) with adding the dilution of 15ml ethylene glycol monomethyl ether in the solution of step 1) gained barium source, fully stir down at 80 ℃ then, be cooled to room temperature, obtain the diluent of barium source solution;
3) Ba:Ti=1:2 in molar ratio, weighing 0.02mol titanium isopropylate is with step 2) diluent of gained barium source solution is added in the titanium isopropylate, fully stirs, mixes, and obtains the mixing solutions of baric titanium;
4) in the mixing solutions of the baric titanium of step 3) gained, add ethylene glycol monomethyl ether, with Ba in the solution
2+Concentration is decided to be 0.1mol/L, stirs 24h, and ageing 10d is clarified, transparent precursor sol;
5) precursor sol with the step 4) gained drips to Pt (111)/Ti/SiO
2On/Si the substrate, on sol evenning machine, precursor sol is spared glue 30s with the rotating speed of 6000rpm, obtain wet film, in the atmosphere furnace of logical oxygen, with the heat-up rate of 2 ℃/min, be raised to 120 ℃ from room temperature, insulation 30min, be raised to 450 ℃ with 2 ℃/min again, insulation 20min obtains the amorphous single thin film;
6) the amorphous single thin film that step 5) is obtained is raised to crystallization 8min in 820 ℃ the quick anneal oven with 50 ℃/sec, powered-down is cooled to room temperature and obtains the crystallization single thin film under oxygen atmosphere;
7) according to actual desired thickness repeating step 5) and 6) four times, the BaTi of (020) oriented growth of the about 250nm of thickness obtained
2O
5Film.
Embodiment 3:
1) takes by weighing the 0.01mol barium acetate, under 80 ℃ of water bath condition, be dissolved in the 10ml acetic acid, obtain barium source solution;
2) with adding the dilution of 15ml ethylene glycol monomethyl ether in the solution of step 1) gained barium source, fully stir down at 80 ℃ then, be cooled to room temperature, obtain the diluent of barium source solution;
3) Ba:Ti=1:2 in molar ratio, weighing 0.02mol tetrabutyl titanate is with step 2) diluent of gained barium source solution is added in the tetrabutyl titanate, fully stirs, mixes, and obtains the mixing solutions of baric titanium;
4) in the mixing solutions of the baric titanium of step 3) gained, add ethylene glycol monomethyl ether, with Ba in the solution
2+Concentration is decided to be 0.12mol/L, stirs 24h, and ageing 10d is clarified, transparent precursor sol;
5) precursor sol with the step 4) gained drips to SrTiO
3On (mixing Nb) substrate, on sol evenning machine, precursor sol is spared glue 30s with the rotating speed of 5500rpm, obtain wet film, in the atmosphere furnace of logical oxygen, with the heat-up rate of 2 ℃/min, be raised to 120 ℃ from room temperature, insulation 30min, be raised to 500 ℃ with 2 ℃/min again, insulation 15min obtains the amorphous single thin film;
6) the amorphous single thin film that step 5) is obtained is raised to crystallization 3min in 870 ℃ the quick anneal oven with 55 ℃/sec, powered-down is cooled to room temperature and obtains the crystallization single thin film under oxygen atmosphere;
7) according to actual desired thickness repeating step 5) and 6) eight times, the BaTi of (020) oriented growth of the about 500nm of thickness obtained
2O
5Film.
Claims (4)
1.BaTi
2O
5The preparation method of film preferred orientation growth is characterized in that including following steps:
1) take by weighing barium source raw material, be dissolved in the acetic acid under 60～80 ℃ of water bath condition, obtain barium source solution, described barium source raw material is barium acetate or barium hydroxide;
2) with adding the ethylene glycol monomethyl ether dilution in the solution of step 1) gained barium source, fully stir down at 60～80 ℃ then, be cooled to room temperature, obtain the diluent of barium source solution;
3) with step 2) diluent of gained barium source solution is added in the liquid organic titanium source, wherein counts Ba:Ti=1:2 in molar ratio, fully stirs, mixes, and obtains the mixing solutions of baric titanium, and described liquid organic titanium source is tetrabutyl titanate or titanium isopropylate;
4) in the mixing solutions of the baric titanium of step 3) gained, add ethylene glycol monomethyl ether, with Ba in the solution
2+Concentration is decided to be 0.05～0.15mol/L, stirs, and ageing is clarified, transparent precursor sol;
5) precursor sol with the step 4) gained drips on the single crystal substrate, on sol evenning machine precursor sol is spared glue, obtains wet film, in the atmosphere furnace of logical oxygen, is raised to 100～120 ℃ from room temperature then, insulation 20～40min; Be warmed up to 350～500 ℃ again, 10～40min is to carry out pyrolysis in insulation, obtains the amorphous single thin film, and described single crystal substrate is Pt (111)/Ti/SiO
2/ Si substrate or SrTiO
3Substrate;
6) the amorphous single thin film that step 5) is obtained places quick anneal oven, is warming up to 800～900 ℃ to carry out crystallization, and aerating oxygen is incubated 1～10min, and powered-down is cooled to room temperature and obtains the crystallization single thin film under oxygen atmosphere;
7) repeating step 5 on the crystallization single thin film) and even glue, pyrolysis and the crystallization steps of step 6) repeatedly, namely implement thermal treatment process layer by layer, obtain multilayer BaTi
2O
5Film, and realize the growth of (020) preferred orientation.
2. BaTi according to claim 1
2O
5The preparation method of film preferred orientation growth is characterized in that: the described even adhesive process condition of step 5) is spared glue 30～40s for the rotating speed with 5000～6000rpm.
3. BaTi according to claim 1
2O
5The preparation method of film preferred orientation growth, it is characterized in that: the described heat-up rate of step 5) is 1～3 ℃/min.
4. BaTi according to claim 1
2O
5The preparation method of film preferred orientation growth, it is characterized in that: the described heat-up rate of step 6) is 50-60 ℃/sec.
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| CN103952676B (en) * | 2014-05-07 | 2016-01-06 | 武汉理工大学 | A kind of BaTi of b axle orientation 2o 5the preparation method of film |
| CN110465282A (en) * | 2019-08-12 | 2019-11-19 | 武汉理工大学 | Sheet nano barium phthalate and preparation method thereof and application based on piezoelectricity photocatalysis in terms of sewage treatment |
| CN113788494A (en) * | 2021-10-27 | 2021-12-14 | 上海大学(浙江·嘉兴)新兴产业研究院 | Preparation method of barium dititanate |
| CN114907116A (en) * | 2022-05-10 | 2022-08-16 | 武汉理工大学 | Preparation method of strontium titanate film with adjustable heat conductivity coefficient |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101767819A (en) * | 2010-01-04 | 2010-07-07 | 武汉理工大学 | Preparation method of BaTi2O5 nano wire |
| CN101818327A (en) * | 2010-03-30 | 2010-09-01 | 武汉理工大学 | Method for preparing barium dititanate (BaTi2O5) ferroelectric film on silicon (Si) single crystal substrate |
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| CN101767819A (en) * | 2010-01-04 | 2010-07-07 | 武汉理工大学 | Preparation method of BaTi2O5 nano wire |
| CN101818327A (en) * | 2010-03-30 | 2010-09-01 | 武汉理工大学 | Method for preparing barium dititanate (BaTi2O5) ferroelectric film on silicon (Si) single crystal substrate |
Non-Patent Citations (4)
| Title |
|---|
| MgO(100)衬底上生长BaTi2O5薄膜及其性能研究;李凌等;《人工晶体学报》;20090831;第38卷(第4期);920-923 * |
| 微乳液法低温制备纳米BaTiO3粉体;邓兆等;《武汉理工大学》;20091231;第31卷(第23期);1-5 * |
| 李凌等.MgO(100)衬底上生长BaTi2O5薄膜及其性能研究.《人工晶体学报》.2009,第38卷(第4期),920-923. |
| 邓兆等.微乳液法低温制备纳米BaTiO3粉体.《武汉理工大学》.2009,第31卷(第23期),1-5. |
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