CN102570018A - Method for manufacturing integrated radio frequency patch microstrip antenna based on BCB/Au - Google Patents
Method for manufacturing integrated radio frequency patch microstrip antenna based on BCB/Au Download PDFInfo
- Publication number
- CN102570018A CN102570018A CN2011104340812A CN201110434081A CN102570018A CN 102570018 A CN102570018 A CN 102570018A CN 2011104340812 A CN2011104340812 A CN 2011104340812A CN 201110434081 A CN201110434081 A CN 201110434081A CN 102570018 A CN102570018 A CN 102570018A
- Authority
- CN
- China
- Prior art keywords
- bcb
- antenna
- described method
- thickness
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Waveguide Aerials (AREA)
Abstract
The invention relates to a method for manufacturing an integrated patch antenna on silicon substrate based on BCB (benzocyclobutene)/Au (aurum). The method is characterized in that a deep notch is etched on substrate silicon to increase the thickness of dielectric material, so that the bandwidth of the antenna is increased; and material filled in the notch and the dielectric material of a transmission line are the same and both are BCB with low dielectric constant. The manufacture process is as follows: a deep notch is etched on the silicon substrate to increase the thickness of dielectric material, a seed layer is formed through splashing, Au is plated to serve as the ground plane of the antenna; the dielectric material is filled in the groove and temperature is controlled for solidification; an Au pillar is manufactured to serve as a through hole that allows a ground wire to be led out; a layer of BCB dielectric material is applied, CMP(chemical mechanical planarization), namely, thinning and polishing, are carried out after solidification so as to improve the surface finish, and the through hole is exposed; and the pattern of the antenna is formed on the BCB through photoetching and plating. After the manufacturing method is adopted, the antenna and an integrated circuit are manufactured as a whole, so that the size is reduced, the reliability is improved, simultaneously, the transmission distance between a transmitter module and the antenna is reduced, and transmission loss is decreased.
Description
Technical field
The invention provides a kind of microwave radio antenna method that adopts microelectronic technique to make, be used for wafer level packaging, belong to wafer level radio frequency encapsulation technology field.
Background technology
Antenna is indispensable in the less radio-frequency field.Microstrip antenna is a kind of new antenna of succeeding in developing phase early 1970s.Compare with microwave antenna commonly used, it has the following advantage: volume is little, and is in light weight, and low section can be conformal with carrier, makes simply, and cost is low; Characteristics on the electrical equipment are to obtain unidirectional wide lobe directional diagram, and the greatest irradiation direction is in the normal direction on plane, are easy to microstripline integratedly, are easy to realize linear polarization or circular polarization.The microstrip antenna of same structure can be formed microstrip antenna array, to obtain higher gain and bigger bandwidth.Therefore microstrip antenna obtains paying attention to more and more widely.Traditional radio frequency paster antenna generally is made on the PCB (printed circuit board (PCB)), is connected with radiating circuit through coaxial cable.Though this kind method has above-mentioned plurality of advantages, the dielectric constant of baseplate material, thickness; And the dimensional uniformity of antenna is relatively poor, and particularly than higher frequency band, these errors can make a big impact to antenna parameter; Often after making; Need further debugging to use, production efficiency is reduced, increased cost.In addition, traditional patch antenna and integrated circuit separate, and can receive the restriction of connector when connecting together, and produce some problems: like impedance matching, and stray inductance, parasitic capacitance etc.
Because above shortcoming, the antenna that is produced on the silicon chip arises at the historic moment, it with integrated circuit together, this antenna manufacture craft is accurate, high conformity has obtained using widely.But this antenna has a kind of shortcoming, and promptly substrate is thinner, generally has only tens μ m even less than 1 μ m, bandwidth is reduced greatly.Improve substrate thickness h and on silicon, realize relatively difficulty, way commonly used in the bibliographical information is an etching groove on silicon, in groove, fills solid dielectric material and makes highly consistent with on every side; Make antenna pattern above that of liquid then; This method makes the antenna substrate material have at least two kinds, and aerial loss increases, and the baseplate material of antenna pattern and feeder line is different; Be easy to generate impedance and do not match, emulation simultaneously and technology are made trouble; Another kind be in groove, fill with other zones just as dielectric material (being generally liquid); Solidify then, this method can also be used when the degree of depth of groove is more shallow, but in the time of the big degree of depth; Often cause the planarization of antenna surface bad, antenna is caused harmful effect.
Summary of the invention
Shortcoming to conventional patch antenna; The objective of the invention is to propose a kind of method of making integrated RF paster microstrip antenna based on BCB/Au; Particularly the method for above-mentioned etching tank is improved; Make under big degree of depth situation, can and make the evenness of groove top and be consistent on every side with same material.The method and embedding type wafer level radio frequency packaging technology are compatible fully, can and MMIC (monolithic integrated microwave circuit Monolithic Microwave Integrated Circuit) packaging technology make together, need not increase extra step.
Concrete production program of the present invention: be mask with the silica a), use anisotropic etchant KOH degree of depth of etching on silicon chip to be the deep trouth of 200-400 μ m;
B) in the deep trouth that step a forms; Fill the BCB material of relative dielectric constant＜3.5; Utilize the surface tension of liquid, make BCB (benzocyclobutene benzocyclobutene) liquid surface exceed the plane of silicon chip, the contraction the when BCB that the volume compensation that exceeds is filled solidifies;
C) silicon slice placed that step b is filled with BCB in the deep trouth is divided second-stage solidification in the hot reflux stove, the phase I curing temperature is 170-190 ℃; The second stage curing temperature is 210-250 ℃, reduces to normal temperature then; BCB dielectric material to guarantee filling in the follow-up high temperature no longer shrinks; Simultaneously, solidify the BCB air spots of back filling, protruding around the intermediate recess;
D) after step c solidifies, plant ball and form the Au soldered ball, draw the ground wire of said antenna;
E) on glue spreader, apply one deck BCB again, applied the back static 2-4 hour, solidify then, be warmed up to 210-230 ℃ by normal temperature, the time is 20-40min, insulation 40-60min, and last linear cooling, temperature fall time is 20-40min; The evenness on surface is further improved;
F) after step e accomplishes, carry out CMP (chemico-mechanical polishing Chemical Mechanical Planarization) technology, make the surface more smooth, the Au soldered ball exposes;
G) the photoetching electric plating method is made the figure of antenna above deep trouth, the steps include:
1. at first at BCB surface sputtering one deck Seed Layer TiW/Au, thickness is respectively
2. apply photoresist then, photoetching is developed, and above groove, exposes the antenna pattern window, electroplates Au then;
3. remove photoresist, remove Seed Layer at last, stay antenna pattern.
Its further characteristic is:
(1) applying one deck BCB thickness of dielectric layers among the described step e again is 20-50 μ m.
(2) the phase I curing temperature is 180 ℃ among the described step c, and the second stage curing temperature is 230 ℃.
(3) the described Au ball height of steps d is 20-50 μ m.
(4) the described Au ball height of steps d is 30-40 μ m.
(5) applying one deck BCB thickness of dielectric layers among the described step e again is 25-40 μ m.
(6) 2. said plating Au thickness is 2-5 μ m in the described step g.
(7) described method is characterized in that:
1. to be warmed up to 170-190 ℃ of time from room temperature be 60 minutes the phase I among the step c, and BCB is slowly solidified, and BCB is fully mobile, shrinks little that the depression that causes tries one's best;
2. be warmed up to 210-250 ℃ then, make the BCB full solidification, the whole process control of phase I and second stage is at 120min.
(8) the described dielectric constant of step b＜3.5 materials are PI, also use heating means to solidify.
The sectional view of the antenna that finally completes and vertical view be respectively like f among Fig. 1 (a) and f (b), antenna be integrated in silica-based on, and increased dielectric substrate thickness through the way of digging deep trouth.
This kind antenna has overcome the thin shortcoming of silicon base integrated antenna medium substrate, compares with traditional silicon base integrated antenna, can obviously increase the bandwidth of antenna, has improved the performance of antenna.Can find out from manufacturing process; This kind manufacture craft flow process and the encapsulation of embedding cake core are compatible; The compatible microelectronic technique of its manufacture craft process; Can and MMCM (Microwave Multichip Module Microwave multichip module) packaging technology carry out together, and on the basis of wafer level packaging, accomplish.Need not to increase additional technical steps.So the antenna that this kind method is made can encapsulate with chip together, compare with traditional external antenna method, reduce the transmission range between antenna transmitter module and the antenna, thereby reduced loss.Simultaneously, antenna and chip integrate, and have improved reliability, have reduced volume, meet the trend of modern integrated circuits encapsulation.
Description of drawings
Fig. 1: micro-strip paster antenna manufacture craft flow process.
A) with KOH corrosive liquid deep trouth of etching on silica-based;
B) in groove, fill excessive BCB;
C) solidify BCB, and on substrate, plant ball;
D) apply one deck BCB with spin-coating method at silicon substrate surface;
E) carry out CMP, the Au soldered ball is exposed, BCB reaches suitable thickness and surfacing;
F) use galvanoplastic to make antenna pattern at the BCB upper surface, wherein f (a) is the sectional view of the antenna that completes, and f (b) is a vertical view, and 102 is the silicon substrate surface stratum among the figure; 103 is the dielectric material of filling in the groove; 104 is the via hole on the dielectric material of top layer, i.e. soldered ball; 105 is the antenna pattern of groove upside.
Fig. 2: the temperature curve that BCB solidifies in the etching tank.
Fig. 3: the temperature curve that surperficial BCB solidifies.
Embodiment
To combine below embodiments of the invention further to be specifically described with reference to accompanying drawing.Scope of the present invention is not limited to following embodiment.
Embodiment:
(1) with KOH at deep trouth of silicon (101) surface etch; The degree of depth is that 200 these instances of μ m-400 μ m are 300 μ m; Sputter one deck TiW/Au; Thickness is respectively
as Seed Layer, electroplates the about 3 μ m of Au, as the ground level (102) of antenna.
(2) advanced low-k materials of excessive filling liquid in groove, this instance is BCB (103), under the situation of not overflowing groove edge; Injection dielectric material as much as possible solidifies in the hot reflux stove then, and the curing temperature curve is as shown in Figure 2; Preceding 60 minutes under lower temperature (180 ℃) (be room temperature or normal temperature～180 ℃) BCB is slowly solidified, BCB can be fully mobile simultaneously, the depression that the less contraction of trying one's best causes; Rise to 230 ℃ then; Make the BCB full solidification, reduce to room temperature again, whole process 120 minutes.Described room temperature or normal temperature are 18-25 ℃.
(3) after the curing, plant ball (104), draw ground wire, the about 30-40 μ of the height of Au soldered ball m.
(4) on glue spreader, apply BCB (103) again, thickness is 30 μ m, after the coating; Leave standstill more than 2 hours, make the surface more smooth, solidify then; Curing time, curve was as shown in Figure 3; The curing temperature of surperficial BCB is 205 ℃ in the present embodiment, but BCB is solidified also not exclusively basically, is beneficial to back CMP technology.
(5) carry out CMP technology, make the surface more smooth, Au soldered ball (104) exposes, and makes top layer BCB thickness at 25-40 μ m.
(6) make antenna pattern (105) on the surface with galvanoplastic, finally accomplish antenna making technology.
Claims (10)
1. method of making the microstrip antenna of radio frequency paster is characterized in that the step of making is:
A) be mask with the silica, use anisotropic etchant KOH degree of depth of etching on silicon chip to be the deep trouth of 200-400 μ m;
B) in the deep trouth that step a forms, fill the BCB material of relative dielectric constant＜3.5, utilize the surface tension of liquid, make the BCB liquid surface exceed the plane of silicon chip, the contraction the when BCB that the volume compensation that exceeds is filled solidifies;
C) silicon slice placed that step b is filled with BCB in the deep trouth is divided second-stage solidification in the hot reflux stove, the phase I curing temperature is 170-190 ℃; The second stage curing temperature is 210-250 ℃, reduces to normal temperature then; BCB dielectric material to guarantee filling in the follow-up high temperature no longer shrinks; Simultaneously, solidify the BCB air spots of back filling, protruding around the intermediate recess;
D) after step c solidifies, plant ball and form the Au soldered ball, draw the ground wire of said antenna;
E) on glue spreader, apply one deck BCB again, applied the back static 2-4 hour, solidify then, be warmed up to 210-230 ℃ by normal temperature, the time is 20-40min, insulation 40-60min, and last linear cooling, temperature fall time is 20-40min; The evenness on surface is further improved;
F) after step e accomplishes, carry out CMP technology, make the surface more smooth, the Au soldered ball exposes;
G) the photoetching electric plating method is made the figure of antenna above deep trouth, the steps include:
1. at first at BCB surface sputtering one deck Seed Layer TiW/Au, thickness is respectively
2. apply photoresist then, photoetching is developed, and above groove, exposes the antenna pattern window, electroplates Au then;
3. remove photoresist, remove Seed Layer at last, stay antenna pattern.
2. by the described method of claim 1, it is characterized in that applying among the step e one deck BCB thickness of dielectric layers is 20-50 μ m again.
3. by the described method of claim 1, it is characterized in that the phase I curing temperature is 180 ℃ among the step c, the second stage curing temperature is 230 ℃.
4. by the described method of claim 1, it is characterized in that the described Au ball height of steps d is 20-50 μ m.
5. by claim 1 or 4 described methods, it is characterized in that the described Au ball height of steps d is 30-40 μ m.
6. by claim 1 or 2 described methods, it is characterized in that applying among the step e one deck BCB thickness of dielectric layers is 25-40 μ m again.
7. by the described method of claim 1, it is characterized in that 2. said plating Au thickness is 2-5 μ m in the step g.
8. by the described method of claim 1, it is characterized in that:
1. to be warmed up to 170-190 ℃ of time from room temperature be 60 minutes the phase I among the step c, and BCB is slowly solidified, and BCB is fully mobile, shrinks little that the depression that causes tries one's best;
2. be warmed up to 210-250 ℃ then, make the BCB full solidification, the whole process control of phase I and second stage is at 120min.
9. by the described method of claim 1, it is characterized in that the described dielectric constant of step b＜3.5 materials are PI, use heating means to solidify.
10. by each described method among the claim 1-4, it is characterized in that:
1. described method with microelectronic technique compatible and and the MMCM packaging technology carry out, and on the basis of wafer level packaging, accomplish;
The beamwidth of antenna of 2. making obviously increases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110434081.2A CN102570018B (en) | 2011-12-21 | 2011-12-21 | Method for manufacturing integrated radio frequency patch microstrip antenna based on BCB/Au |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110434081.2A CN102570018B (en) | 2011-12-21 | 2011-12-21 | Method for manufacturing integrated radio frequency patch microstrip antenna based on BCB/Au |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102570018A true CN102570018A (en) | 2012-07-11 |
| CN102570018B CN102570018B (en) | 2014-02-26 |
Family
ID=46414850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110434081.2A Expired - Fee Related CN102570018B (en) | 2011-12-21 | 2011-12-21 | Method for manufacturing integrated radio frequency patch microstrip antenna based on BCB/Au |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102570018B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108696294A (en) * | 2018-05-09 | 2018-10-23 | 深圳市盛路物联通讯技术有限公司 | Radio circuit, switch and the terminal of Internet of Things high integration |
| CN114976564A (en) * | 2022-05-24 | 2022-08-30 | 中国电子科技集团公司第五十五研究所 | Manufacturing method of air composite dielectric microstrip line |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658432A (en) * | 2004-02-17 | 2005-08-24 | 京瓷株式会社 | Array antenna and radio communication apparatus using the same |
| CN1809760A (en) * | 2003-06-25 | 2006-07-26 | 佳能株式会社 | High frequency electrical signal control device and sensing system |
| CN101718943A (en) * | 2008-10-08 | 2010-06-02 | 佳能株式会社 | Terahertz wave generator |
-
2011
- 2011-12-21 CN CN201110434081.2A patent/CN102570018B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809760A (en) * | 2003-06-25 | 2006-07-26 | 佳能株式会社 | High frequency electrical signal control device and sensing system |
| CN1658432A (en) * | 2004-02-17 | 2005-08-24 | 京瓷株式会社 | Array antenna and radio communication apparatus using the same |
| CN101718943A (en) * | 2008-10-08 | 2010-06-02 | 佳能株式会社 | Terahertz wave generator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108696294A (en) * | 2018-05-09 | 2018-10-23 | 深圳市盛路物联通讯技术有限公司 | Radio circuit, switch and the terminal of Internet of Things high integration |
| CN114976564A (en) * | 2022-05-24 | 2022-08-30 | 中国电子科技集团公司第五十五研究所 | Manufacturing method of air composite dielectric microstrip line |
| CN114976564B (en) * | 2022-05-24 | 2023-12-01 | 中国电子科技集团公司第五十五研究所 | Manufacturing method of air composite medium microstrip line |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102570018B (en) | 2014-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10103450B2 (en) | Integration of area efficient antennas for phased array or wafer scale array antenna applications | |
| US9991216B2 (en) | Antenna cavity structure for integrated patch antenna in integrated fan-out packaging | |
| US11532575B2 (en) | Integrated antenna package structure and manufacturing method thereof | |
| US7763976B2 (en) | Integrated circuit module with integrated passive device | |
| US9666930B2 (en) | Interface between a semiconductor die and a waveguide, where the interface is covered by a molding compound | |
| CN102479774B (en) | Semiconductor package | |
| US10593635B2 (en) | Multi-die and antenna array device | |
| CN101656244A (en) | Multilayer interconnection packaging structure of silica-based embedded microwave multi chip module and manufacturing method | |
| CN103400829A (en) | Semiconductor package and manufacture method thereof | |
| CN103855458A (en) | Embedding low-K materials in antennas | |
| CN103367863B (en) | Integrated broadband antenna and manufacturing method thereof | |
| CN103296008A (en) | TSV or TGV pinboard, 3D packaging and manufacture method thereof | |
| WO2014119302A1 (en) | Wireless module and production method for wireless module | |
| CN103650132A (en) | Wireless module | |
| US10128203B2 (en) | Fan-out package structure, antenna system and associated method | |
| CN102570018B (en) | Method for manufacturing integrated radio frequency patch microstrip antenna based on BCB/Au | |
| CN106374208B (en) | High bandwidth organic substrate antenna structure and production method | |
| US11201386B2 (en) | Semiconductor device package and method for manufacturing the same | |
| US12003023B2 (en) | In-package 3D antenna | |
| CN103887601B (en) | Folded slot antenna structure and preparation method thereof | |
| US20230318171A1 (en) | Electronic device | |
| CN110739227A (en) | manufacturing method of three-dimensional heterogeneous radio frequency module based on three-dimensional heat dissipation structure | |
| TWI842142B (en) | Electronic device | |
| KR20060081105A (en) | Flip-chip bonding structure using multi chip module-deposited substrate | |
| US20230402409A1 (en) | Electronic package and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140226 Termination date: 20201221 |