CN102568423B - The gate drive circuit of display panel - Google Patents
The gate drive circuit of display panel Download PDFInfo
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- CN102568423B CN102568423B CN201210001714.5A CN201210001714A CN102568423B CN 102568423 B CN102568423 B CN 102568423B CN 201210001714 A CN201210001714 A CN 201210001714A CN 102568423 B CN102568423 B CN 102568423B
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Abstract
The invention relates to a kind of driving circuit, particularly a kind of gate drive circuit of display panel, it comprises: a thermistor unit, exports a temperature-sensitive voltage according to environment temperature; And a hysteresis circuit, couple this thermistor unit, a gate drive voltage is exported according to this temperature-sensitive voltage, wherein when this environment temperature is increased to first temperature, this hysteresis circuit transfers this gate drive voltage to low voltage level, when this environment temperature is reduced to second temperature, this hysteresis circuit transfers this gate drive voltage to high voltage level.The present invention utilizes the characteristic of thermistor and hysteresis loop to come accurately to adjust gate drive voltage according to environment temperature, can reduce state and switch the power loss caused.
Description
Technical field
The invention relates to a kind of driving circuit, and relate to a kind of gate drive circuit of display panel especially.
Background technology
In recent years, along with semiconductor technologies is flourish, portable electronic product and flat-panel screens product also rise thereupon.And in the middle of the type of numerous flat-panel screens, liquid crystal display (Liquid Crystal Display, LCD), based on the advantage such as its low voltage operating, radiationless line scattering, lightweight and volume be little, has become the main flow of display product immediately.
In order to the cost of manufacture of liquid crystal display being forced down, in order to reduce the cost of display pannel, the gate drive circuit on panel is directly done on panel by panel manufacturers gradually, therefore does not need additionally to buy gate drive IC again when assembling panel.This kind does not need the panel of gate drive IC to be referred to as GIP (gate in panel) panel
In traditional design, the gate of picture element driven with stable direct current or fixing square wave, but among the machine of GIP, this different design closes the characteristic of the high starting voltage of GIP, if the lower easy generation start picture of voltage sets is different; If voltage sets causes consumed power excessive compared with Gao Zehui.
Some design uses thermistor to adjust voltage, improves voltage, then reduce voltage, but this design can allow the gate voltage of panel be subject to the difference of environment for use and change, and cannot maintain the optimum value during design during high temperature when firm turn-on temperature is lower.In addition, due to the inborn characteristic of thermistor and instability cannot control accurately, the gate voltage of panel therefore will be caused to float.
Summary of the invention
The invention provides a kind of gate drive circuit of display panel, can accurately adjust gate drive voltage according to variation of ambient temperature.
The present invention proposes a kind of gate drive circuit of display panel, comprises a thermistor unit and a hysteresis circuit.Wherein thermistor unit exports a temperature-sensitive voltage according to environment temperature.Hysteresis circuit couples thermistor unit, export a gate drive voltage according to temperature-sensitive voltage, wherein when environment temperature is increased to first temperature, gate drive voltage transfers low voltage level to, when environment temperature is reduced to second temperature, gate drive voltage transfers high voltage level to.
In one embodiment of this invention, the first above-mentioned temperature is less than the second temperature.
In one embodiment of this invention, above-mentioned thermistor unit comprises one first resistance and a thermistor.Wherein thermistor and the first resistance are serially connected with between a supply voltage and a ground connection, to produce temperature-sensitive voltage on the common joint of the first resistance and thermistor.
In one embodiment of this invention, above-mentioned hysteresis circuit comprises a hysteresis amplifier and a feedback resistance.Wherein the positive input terminal of hysteresis amplifier couples thermistor unit, and to receive temperature-sensitive voltage, the positive input terminal of hysteresis amplifier couples a reference voltage.Feedback resistance is coupled between the positive input terminal of hysteresis amplifier and output terminal.
In one embodiment of this invention, above-mentioned hysteresis circuit more comprises an output resistance, one first divider resistance and one second divider resistance.Wherein one end of output resistance couples the output terminal of hysteresis amplifier.First divider resistance is coupled between an operating voltage source and the output resistance other end.Second divider resistance is coupled between a ground connection and the output resistance other end, and gate drive voltage results from the common joint of the first divider resistance and the second divider resistance.
In one embodiment of this invention, above-mentioned gate drive circuit, more comprises a delay cell, and it is coupled between the output terminal of thermistor unit and a ground connection, postpones the pace of change of temperature-sensitive voltage.
In one embodiment of this invention, above-mentioned delay cell is an electric capacity, between its output terminal being coupled to thermistor unit and ground connection.
In one embodiment of this invention, above-mentioned hysteresis circuit comprises one second resistance, a double carrier transistor, a feedback resistance, one first divider resistance and one second divider resistance.Wherein one end of the second resistance couples a supply voltage.The base stage of double carrier transistor couples thermistor unit, and to receive temperature-sensitive voltage, the collector of double carrier transistor couples the other end of the second resistance.Between the other end that feedback resistance is coupled to the second resistance and the base stage of double carrier transistor.First divider resistance is coupled between an operating voltage source and the emitter-base bandgap grading of double carrier transistor.Second divider resistance is coupled between a ground connection and the emitter-base bandgap grading of double carrier transistor, and gate drive voltage results from the common joint of the first divider resistance and the second divider resistance.
Based on above-mentioned, the present invention utilizes the characteristic of thermistor and hysteresis loop to come accurately to adjust gate drive voltage according to environment temperature, can reduce state and switch the power loss caused.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate institute's accompanying drawings to be described in detail below.
Accompanying drawing explanation
Fig. 1 illustrates the gate drive circuit schematic diagram of the display panel into one embodiment of the invention.
Fig. 2 illustrates the graph of a relation into environment temperature and gate drive voltage.
Fig. 3 illustrates the gate drive circuit schematic diagram of the display panel into another embodiment of the present invention.
Fig. 4 illustrates the gate drive circuit schematic diagram of the display panel into another embodiment of the present invention.
Fig. 5 illustrates the gate drive circuit schematic diagram of the display panel into another embodiment of the present invention.
[primary clustering symbol description]
100,300,400,500: gate drive circuit
102: thermistor unit
104: hysteresis circuit
302: hysteresis amplifier
402: delay cell
VS: temperature-sensitive voltage
VG: gate drive voltage
T1, T2: temperature
R1, R2: resistance
RS: thermistor
VDD: supply voltage
RF: feedback resistance
RO: output resistance
RD1: the first divider resistance
RD2: the second divider resistance
Vref: reference voltage
VOP: operating voltage source
Cd: electric capacity
Q1: double carrier transistor.
Embodiment
Fig. 1 illustrates the gate drive circuit schematic diagram of the display panel into one embodiment of the invention.Please refer to Fig. 1, gate drive circuit 100 comprises thermistor unit 102 and a hysteresis circuit 104.Wherein thermistor unit 102 couples hysteresis circuit 104, thermistor unit 102 exports a temperature-sensitive voltage VS according to environment temperature, hysteresis circuit 104 then exports the gate of a gate drive voltage VG to display picture element according to temperature-sensitive voltage VS, and then controls the display frame of display picture element.
The graph of a relation of environment temperature as shown in Figure 2 and gate drive voltage VG, wherein the solid line of Fig. 2 is the curve of gate drive voltage VG with variation of ambient temperature of the present embodiment, and dotted line is then the gate drive voltage change curve that known gate drive circuit utilizes thermistor to export.Known with reference to Fig. 2, when environment temperature is increased to the first temperature T1, the gate drive voltage VG of the present embodiment will transfer low voltage level to by high voltage level, and when environment temperature is reduced to the second temperature T2, gate drive voltage VG just transfers high voltage level to, and wherein the first temperature T1 is greater than the second temperature T2.
So just can meet display panel temperature when just start lower and need voltage be improved, and temperature raises and must reduce the demand of voltage after powering, and then avoid the situation that occurs that start picture XOR power consumption is too high.In addition, because the change in voltage critical point of hysteresis loop transfers high temperature at low temperature, and high temperature is not identical when transferring low temperature to, when therefore can avoid near the critical voltage that the gate drive voltage corresponding to environment temperature drops on the switching of display picture element, the state switching times of display picture element is caused frequently to improve the situation of power consumption.
Fig. 3 illustrates the gate drive circuit schematic diagram of the display panel into another embodiment of the present invention.Please refer to Fig. 3, in the present embodiment, thermistor unit 102 in gate drive circuit 300 can comprise an a resistance R1 and thermistor RS, resistance R1 and thermistor RS is serially connected with between supply voltage VDD and ground connection, wherein the resistance value of thermistor RS changes with the change of environment temperature, and then the temperature-sensitive voltage VS on resistance R1 and thermistor RS common joint is changed.In the present embodiment, resistance R1 is for being coupled to supply voltage VDD, and thermistor RS is coupled to ground connection, and so not as limit, resistance R1 also can change into and be coupled to ground connection, and thermistor RS then changes into and is coupled to supply voltage VDD.
In addition, hysteresis circuit 104 can comprise hysteresis amplifier 302, feedback resistance RF, an output resistance RO, one first divider resistance RD1 and one second divider resistance RD2.The wherein positive input terminal coupling resistance R1 of hysteresis amplifier 302 and the common joint of thermistor RS, to receive temperature-sensitive voltage VS, the negative input end of hysteresis amplifier 302 is then coupled to a reference voltage Vref.The output terminal of hysteresis amplifier 302 then couples wherein one end of output resistance RO in addition, and the other end of output resistance RO is then coupled to the common joint of the first divider resistance RD1 and one second divider resistance RD2.First divider resistance RD1 and one second divider resistance RD2 is serially connected with between operating voltage source VOP and ground connection, and above-mentioned gate drive voltage VG results from the common joint of the first divider resistance RD1 and the second divider resistance RD2.
When the temperature of the surroundings is low (when such as just starting shooting), thermistor RS is subject to the impact of environment temperature and has less resistance value, therefore supply voltage VDD is via after resistance R1 and thermistor RS dividing potential drop, produces a less temperature-sensitive voltage VS on the common joint of resistance R1 and thermistor RS.After temperature-sensitive voltage VS is received by the positive input terminal of hysteresis amplifier 302, the reference voltage Vref of itself and negative input end compares by hysteresis amplifier 302, because temperature-sensitive voltage VS now will be less than reference voltage Vref, thus the voltage of hysteresis amplifier 302 output terminal will be low voltage level.Now output resistance RO can be equivalent in parallel with the second divider resistance RD2, and thus, the gate drive voltage VG on the first divider resistance RD1 and the second divider resistance RD2 common joint will be enhanced, and the demand of high voltage level when meeting start.
After boot program terminates, the temperature of display panel will raise gradually, now thermistor RS also can be subject to the impact of environment temperature and have larger resistance value, thus on the common joint of resistance R1 and thermistor RS, produces a larger temperature-sensitive voltage VS further.Similarly, the reference voltage Vref of temperature-sensitive voltage VS and negative input end compares by hysteresis amplifier 302, and because temperature-sensitive voltage VS now will be greater than reference voltage Vref, thus the voltage of hysteresis amplifier 302 output terminal will transfer high voltage level to.Now output resistance RO can be equivalent in parallel with the first divider resistance RD1, thus, gate drive voltage VG on first divider resistance RD1 and the second divider resistance RD2 common joint will be lowered, and the demand that when meeting normal running after start, voltage quasi position is lower.
As mentioned above, by the induction change of resistance versus temperature and the hysteresis loop characteristic of hysteresis amplifier 302 that coordinate thermistor RS, the voltage requirements of display panel when just start and after start can be reached, when also can avoid near the critical voltage that the gate drive voltage VG corresponding to environment temperature drops on the switching of display picture element simultaneously, cause the state switching times of display picture element frequent and improve power consumption.
Fig. 4 illustrates the gate drive circuit schematic diagram of the display panel into another embodiment of the present invention.Please refer to Fig. 4, the gate drive circuit 400 of the present embodiment is with the difference of the gate drive circuit 300 of Fig. 3, and the gate drive circuit 400 of the present embodiment more comprises a delay cell 402.Wherein between delay cell 402 output terminal that is coupled to thermistor unit 102 and ground connection, it is in order to postpone rising or the decline rate of temperature-sensitive voltage VS, and then makes the change situation of gate drive voltage VG can the demand of realistic application circuit.In the present embodiment, delay cell 402 can utilize an electric capacity Cd to realize, not as limit in right practical application, between the output terminal that electric capacity Cd is coupled to thermistor unit 102 and ground connection.
Fig. 5 illustrates the gate drive circuit schematic diagram of the display panel into another embodiment of the present invention.Please refer to Fig. 5, the gate drive circuit 500 of the present embodiment is with the difference of the gate drive circuit 300 of Fig. 3, and the hysteresis circuit 104 of the gate drive circuit 500 of the present embodiment is for realize with a resistance R2, a double carrier transistor Q1, feedback resistance RF, the first divider resistance RD1 and the second divider resistance RD2.Wherein resistance R2 is coupled between the collector of double carrier transistor Q1 and supply voltage VDD, between the collector that feedback resistance RF is coupled to double carrier transistor Q1 and base stage, the base stage of double carrier transistor Q1 is coupled to the common joint of resistance R1 and thermistor RS, to receive temperature-sensitive voltage VS.In addition, the first divider resistance RD1 and the second divider resistance RD2 is serially connected with between operating voltage source VOP and ground connection, and the common joint of the first divider resistance RD1 and the second divider resistance RD2 is coupled to the emitter-base bandgap grading of double carrier transistor Q1.In addition, the resistance R1 in the thermistor unit 102 of the present embodiment is contrary with Fig. 3 with the coupling mode of thermistor RS, that is resistance R1 is for being coupled to ground connection, and thermistor RS is then for being coupled to supply voltage VDD.
Similarly, when just start environment temperature is lower, thermistor RS is subject to the impact of environment temperature and has less resistance value, and the temperature-sensitive voltage VS on the common joint of therefore resistance R1 and thermistor RS is less.Due to the voltage difference between the base stage of double carrier transistor Q1 and emitter-base bandgap grading larger time, the impedance between collector and emitter-base bandgap grading will be larger, and therefore now double carrier transistor Q1 will present the state of high impedance.Thus, now open circuit can be regarded as between the collector of double carrier transistor Q1 and emitter-base bandgap grading, that is double carrier transistor Q1 and resistance R2 can be left in the basket.The magnitude of voltage of gate drive voltage VG will be determined by the first divider resistance RD1 and the second divider resistance RD2, and then gate drive voltage VG is enhanced, and the demand of high voltage level when meeting start.
After boot program terminates, the temperature of display panel will raise gradually, now thermistor RS also can be subject to the impact of environment temperature and have larger resistance value, thus on the common joint of resistance R1 and thermistor RS, produces a larger temperature-sensitive voltage VS further.The now impedance of double carrier transistor Q1 will be lowered, therefore resistance R2 can be equivalent in parallel with the first divider resistance RD1, thus, gate drive voltage VG on first divider resistance RD1 and the second divider resistance RD2 common joint will be lowered, and the demand that when meeting normal running after start, voltage quasi position is lower.
In sum, the present invention utilizes the characteristic of hysteresis loop to adjust gate drive voltage, lower and need voltage be improved to meet display panel temperature when just start, and temperature raises and must reduce the demand of voltage after powering, and then avoid the situation that occurs that start picture XOR power consumption is too high.In addition, because the change in voltage critical point of hysteresis loop transfers high temperature at low temperature, and high temperature is not identical when transferring low temperature to, when therefore can avoid near the critical voltage that the gate drive voltage corresponding to environment temperature drops on the switching of display picture element, the state switching times of display picture element is caused frequently to improve the situation of power consumption.
Although the present invention discloses as above with embodiment; so itself and be not used to limit the present invention; have in any art and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on the accompanying claim person of defining.
Claims (6)
1. a gate drive circuit for display panel, is characterized in that, comprising:
One thermistor unit, exports a temperature-sensitive voltage according to environment temperature; And
One hysteresis circuit, couple this thermistor unit, a gate drive voltage is exported according to this temperature-sensitive voltage, wherein when this environment temperature is increased to first temperature, this hysteresis circuit transfers this gate drive voltage to low voltage level, when this environment temperature is reduced to second temperature, this hysteresis circuit transfers this gate drive voltage to high voltage level;
Wherein this hysteresis circuit comprises:
One hysteresis amplifier, its positive input terminal couples this thermistor unit, and to receive this temperature-sensitive voltage, the negative input end of this hysteresis amplifier couples a reference voltage; And
One feedback resistance, is coupled between the positive input terminal of this hysteresis amplifier and output terminal.
2. the gate drive circuit of display panel according to claim 1, is characterized in that, wherein this first temperature is less than this second temperature.
3. the gate drive circuit of display panel according to claim 1, is characterized in that, wherein this thermistor unit comprises:
One first resistance; And
One thermistor, and this first resistance is serially connected with between a supply voltage and a ground connection, to produce this temperature-sensitive voltage on the common joint of this first resistance and this thermistor.
4. the gate drive circuit of display panel according to claim 1, is characterized in that, wherein this hysteresis circuit more comprises:
One output resistance, its one end couples the output terminal of this hysteresis amplifier;
One first divider resistance, is coupled between an operating voltage source and this output resistance other end; And
One second divider resistance, be coupled between a ground connection and this output resistance other end, this gate drive voltage results from the common joint of this first divider resistance and this second divider resistance.
5. the gate drive circuit of display panel according to claim 1, is characterized in that, more comprises:
One delay cell, is coupled between the output terminal of this thermistor unit and a ground connection, postpones the pace of change of this temperature-sensitive voltage.
6. the gate drive circuit of display panel according to claim 5, is characterized in that, wherein this delay cell is an electric capacity, and this electric capacity is coupled between the output terminal of this thermistor unit and this ground connection.
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CN201210001714.5A CN102568423B (en) | 2012-01-05 | 2012-01-05 | The gate drive circuit of display panel |
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CN102568423B true CN102568423B (en) | 2015-08-26 |
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Cited By (1)
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EP3716325A1 (en) * | 2019-03-25 | 2020-09-30 | Delta Electronics (Shanghai) Co., Ltd. | Semiconductor chip |
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CN104485078B (en) * | 2014-12-30 | 2016-09-07 | 合肥京东方光电科技有限公司 | Gate driver circuit, display floater and display device |
TWI579824B (en) * | 2016-04-01 | 2017-04-21 | 瑞鼎科技股份有限公司 | Gate driving circuit |
KR102615016B1 (en) * | 2017-09-27 | 2023-12-18 | 삼성디스플레이 주식회사 | Organic light emitting display device and mehthod for driving the same |
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CN101430231A (en) * | 2007-10-31 | 2009-05-13 | 凹凸电子(武汉)有限公司 | Temperature detection method and system |
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JPS6420595A (en) * | 1987-07-16 | 1989-01-24 | Mitsubishi Electric Corp | Liquid crystal display device |
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CN1949119A (en) * | 2005-10-11 | 2007-04-18 | 华硕电脑股份有限公司 | Fan system and method with circuit magnetic hysteresis feature |
CN101430231A (en) * | 2007-10-31 | 2009-05-13 | 凹凸电子(武汉)有限公司 | Temperature detection method and system |
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EP3716325A1 (en) * | 2019-03-25 | 2020-09-30 | Delta Electronics (Shanghai) Co., Ltd. | Semiconductor chip |
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Effective date of registration: 20170814 Address after: 1#, building third, fourth, 6 West Road, Mawei West Road, Mawei District, Fujian, Fuzhou Co-patentee after: Chunghwa Picture Tubes Ltd. Patentee after: CPT DISPLAY TECHNOLOGY (SHENZHEN)CO., LTD. Address before: 350015, Xingye Road, Mawei Science Park, Fujian, Fuzhou 1, China Co-patentee before: Chunghwa Picture Tubes Ltd. Patentee before: Fujian Huaying Display Technology Co., Ltd. |
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