CN102567779A - Surface acoustic wave radio frequency identification tag of interdigital transducer / zinc oxide / aluminum (IDT / ZnO / AL) / diamond multilayer membrane structure - Google Patents
Surface acoustic wave radio frequency identification tag of interdigital transducer / zinc oxide / aluminum (IDT / ZnO / AL) / diamond multilayer membrane structure Download PDFInfo
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- CN102567779A CN102567779A CN2012100017501A CN201210001750A CN102567779A CN 102567779 A CN102567779 A CN 102567779A CN 2012100017501 A CN2012100017501 A CN 2012100017501A CN 201210001750 A CN201210001750 A CN 201210001750A CN 102567779 A CN102567779 A CN 102567779A
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Abstract
The invention discloses a surface acoustic wave radio frequency identification tag of an interdigital transducer / zinc oxide / aluminum (IDT/ ZnO/ AL)/ diamond multilayer membrane structure. The tag comprises a port resonator and a tag antenna. The port resonator uses the multilayer membrane structure and can improve the storage capacity of the tag and increase the combination property of the tag. A novel tag antenna of a meander-line dipole is designed to be matched with the port resonator, and the frequency of the antenna is 2.45 GHz. Compared with traditional antennas, benefits and effective bandwidths are remarkably improved, therefore remote radiation of the tag is achieved.
Description
[technical field]
The invention belongs to automatic identification technology and information stores transmission technique field, particularly a kind of acoustic surface wave radio frequency identification (SAW-RFID) label that is applied to the IDT/ ZnO/ Al/ diamond multilayer membrane structure of hyundai electronics, acoustics, microelectronic process engineering and Radar Signal Processing technology etc.
[background technology]
In recent years; Mobile communication rapid development; In varied, the radio-frequency recognition system that differs from one another, the RF identification (RFID) of utilizing surface acoustic wave (SAW) technology to realize is compared with traditional RFID that utilizes integrated circuit (IC) realization has many special advantages.Acoustic surface wave radio frequency identification (SAW-RFID) technology is a core with the SAW device; Having overcome tradition is some shortcomings of the radio frequency identification equipment of core with the IC chip, and has passively, and decipherment distance is far away; Can discern characteristics such as swiftly passing object; Be highly suitable for the identification of vehicle non-parking charge, landmark identification, the identification of rolling stock license number; Because SAW-RFID high temperature resistance, radioresistance, be applicable on the products such as the food that needs high-energy X-ray or gamma ray sterilization or medicine; Can also use on metal and fluid product.The SAW RF tag is a passive device, does not use the power supply in any external world, and low to the radiation power requirement of reader simultaneously, the required reader radiation power of SAW RF tag only is 1/100 of a traditional IC label; And have the identification and advantages such as dual-use function of sensing.
Yet because existing SAW device antenna size is also bigger, cause its label sizes too big, the surface acoustic wave label can't be applied in the identification of little article such as retail.Therefore, how to make problems such as label miniaturization cause researcher's concern day by day.The SAW forming label frequency of some monocrystalline generally is in the 915MHz-1.2GHz scope at present, so decipherment distance is limited, adopts multi-layer film structure, can make high-frequency SAW label, and label property storage volume is big, is adapted in the multiple environment.
The substrate of surface acoustic wave label and dual-mode antenna are the main bodys of whole tag system.The material of the substrate of label, structure and technical characterstic have determined the complexity of frequency of operation, bandwidth and the manufacturing of label; The optimal design of antenna can be dwindled the physical dimension of whole label to a great extent; Coupling between them then plays crucial effects to reliability, the stability of label.
In RFID device in the past based on surface acoustic wave techniques; Substrate material often adopts piezoelectric monocrystal or piezoceramic material, satisfies modern identification automatically and the required high-frequency of the information transmission system, the requirement of bandwidth greatly because the low electromechanical coupling factor of these materials self or low velocity of sound characteristics are difficult to preparation.And receiving the restriction of label sizes, general antenna type such as electromagnetic horn, helical antenna, reflector antenna etc. all are not suitable for and are designed to label antenna.The coil antenna of widespread use in the IC-card label; Be a kind of near field antenna of utilizing EM coupling between the coil to transmit information, the coil antenna frequency of operation is little, generally at low frequency between the high frequency; And operating distance is in one meter, thereby also unsuitable being applied on the high-frequency sound surface wave label.
Dipole antenna of the prior art utilizes electromagnetic backscattering to come mutual transmission information, is a kind of ultrahigh frequency and microwave region of being operated in, and operating distance can reach the above far field antenna of 10m.In addition, characteristics such as it is low that dipole antenna also has a section, simple in structure are applicable to and make the high-frequency sound surface wave label antenna.
[summary of the invention]
The objective of the invention is in order to solve the problems of the prior art, and a kind of acoustic surface wave radio frequency identification label of IDT/ ZnO/ Al/ diamond multilayer membrane structure is provided.
For realizing the foregoing invention purpose; The invention discloses a kind of acoustic surface wave radio frequency identification label of IDT/ ZnO/ Al/ diamond multilayer membrane structure; Comprise single port resonator and antenna; It is characterized in that said single port resonator adopts IDT/ ZnO/ Al/ diamond multilayer membrane structure; Be on silicon substrate, to adopt microwave plasma CVD legal system to be equipped with diamond film; Preferred deposit thickness should be greater than the 3 times of wavelength of surface acoustic wave that determined by this tag hub frequency (
); V is the surface acoustic wave phase velocity in the formula, and f is the tag hub frequency; On diamond film, make deposited by electron beam evaporation systems produce Al film then, require the surface thickness 40nm ~ 100nm of Al film; On the Al film, use the ZnO film of rf magnetron sputtering systems produce C-axle orientation again, ZnO film has higher c axle orientation, and preferably its average departure degree is less than＜1 °, and thickness is the wavelength of 1/5-1/4 surface acoustic wave; On ZnO film, make deposited by electron beam evaporation systems produce metal film at last, prepare the interdigital transducer and open circuit reflecting grating of resonator again through photoetching; Interdigital logarithm is that 24-28 is right in the preferred interdigital transducer, and the interdigital electrode width is 0.4 μ m-1.2 μ m, and interdigital electrode thickness is 40nm-150nm; The electrode width of preferred transducer is
.Preferred reflecting grating is the open circuit reflecting grating, and the 4-8 group is set, and every group of 9-11 is right.Reflecting grating metallization ratio can design according to the specific requirement of label.Interdigital transducer and reflecting grating are on the metal A l of electron beam evaporation systems produce film, prepare the interdigital transducer and the reflecting grating shape of label through photoetching technique.
Said label antenna is the bending dipole antenna.The bending dipole antenna is as the dual-mode antenna of label, and its dipole arm preferably adopts the irregular right angle of spacing distance folding type back and forth, through changing the bending number of times, can adjust the antenna resonance characteristic effectively.The bending dipole antenna can increase the electrical length of antenna, thereby reduced in size.In addition, what the making of said bending dipole antenna can be adopted is aluminium base copper-clad plate RF4 dielectric-slab, and the profile of antenna is to be processed by copper sheet.
Said label is a high frequency wireless and passive SAW label, and label frequency is 2.45GHz-5.8.GHz.
The dipole antenna of IDT/ ZnO/ Al/ diamond multilayer membrane structure SAW RFID label of the present invention has several special advantages:
1. more than its of multi-layered film structure surface acoustic wave resonator scooter 10000m/s that the present invention adopts; Compare with the resonator that adopted the piezoelectric crystal structure in the past; Can under the identical situation of electrode width, make the centre frequency of label improve 2.5-4 doubly.
What 2. this label adopted is IDT/ ZnO/ Al/ diamond multilayer membrane structure, and IDT/ ZnO/ Al/ diamond multilayer thin structure surface acoustic wave label can be applicable on metal and the fluid product; High temperature resistance, radioresistance are applicable on the products such as the food that needs high-energy X-ray or gamma ray sterilization or medicine, and the object that adapts to liquid or run up.
3. adopt the SAW label of multi-layer film structure can make the high-frequency label of high capacity, satisfy the demand of modern digital communication.
4. the employing of the dipole arm of antenna is collapsible back and forth, compares with the conventional dipole sub antenna, and the bending dipole antenna configuration has desirable dimension reduction characteristic, through changing the bending number of times, can adjust the antenna resonance characteristic effectively.Utilization bending dipole antenna can be realized required resonant frequency of operation effectively, and then realizes miniaturization surface acoustic wave RFID label antenna.And be easy to carry out good coupling with multi-layer film structure single port resonator, matching system is stable, and matching network is simple.
Thereby 5. adopting folding line is exactly the miniaturization that under antenna performance loss acceptable situation, realizes antenna.The electric current of the continuous bending of bending dipole has opposite phases, and the reactance of capacitive with perception can be provided simultaneously, utilizes this point can be used for effectively reducing antenna size.
[description of drawings]
Fig. 1 is IDT/ ZnO/ Al/diamond lattic structure single port resonator label synoptic diagram;
Fig. 2 is IDT/ ZnO/ Al/diamond lattic structure single port resonator structure figure;
Fig. 3 is Fig. 2 tag dipole antenna domain;
Fig. 4 is Al/ZnO/Al/ diamond multilayer film X ray diffracting spectrum.
Among the figure: the 1-reader; The 2-pulse signal; The 3-label antenna; 4-interdigital transducer (IDT); 5-surface acoustic wave signal; The 6-reflecting grating; The 7-ZnO film; The 8-diamond thin; 9-silicon (Si) substrate; 10-metal level (Al); The 11-dipole arm; The 12-feeder line; 13-Babylon microstrip line; The 15-ground plate; 16; The feed mouth.
Below in conjunction with accompanying drawing and embodiment invention is specified.
[embodiment]
A case study on implementation of the present invention is a 2.45GHz SAW RFID label.Adopt IDT/ ZnO/ Al/ diamond multilayer membrane structure single port resonator; Label antenna is the bending dipole antenna, and the label antenna size is less, satisfies the miniaturization requirement; Easy and multi-layer film structure single port resonator matees; Matching network is simple, can realize high-frequency surface acoustic wave label, and antijamming capability is strong.
Label resonator of the present invention can also adopt IDT/ZnO/ diamond multilayer membrane structure, ZnO/IDT/ diamond multilayer membrane structure or Al/ZnO/ IDT/ diamond multilayer membrane structure, all be applicable to this patent invention requirement.
Principle of work of the present invention is: the radio-frequency queries pulse signal 2 that sends when reader 1 is received by label antenna 3; Label antenna 3 is transferred to pulse signal 2 interdigital transducer (IDT) 4 of the SAW label single port resonator that directly links to each other with label antenna 3 again; It converts the pulse signal that receives 2 into surface acoustic wave pulse signal 5 through ZnO piezoelectric film 7; On ZnO7/ diamond multilayer film 8, propagate into reflecting grating 6; Because the reflecting grating state and the coding of preparation have strict corresponding relationship, the surface acoustic wave pulse signal 5 of the grid reflection echo that then is reflected will have coded message.Surface acoustic wave pulse signal 5 passes through interdigital transducer (IDT) 4 again and converts RF pulse signal 2 into, and goes back from label antenna 3 emissions.After reader 1 received echo pulse signal 2, with its amplification, modulation and demodulation, and entering computer database reach the RF identification purpose, and were as shown in Figure 1.
The practical implementation step is following:
The making of 1 single port resonator
At first utilize microwave plasma CVD method on silicon substrate 9, to make diamond film 8, its deposit thickness is greater than the 3 times of wavelength of surface acoustic wave that determined by this tag hub frequency.
The method that re-uses chemically mechanical polishing (CMP) is polished diamond thin, to reach the required surface smoothness of preparation SAW device.
Re-use the electron beam evaporation system, on diamond thin, make Al film 10, thickness is 40nm.
Re-use ZnO (002) film 7 that rf magnetron sputtering prepares C-axle orientation, its thickness is the wavelength of 1/5 ~ 1/4 surface acoustic wave.
Re-use the electron beam evaporation system; On ZnO film, make Al film (being transducer 4 and reflecting grating 6 place layers) greater than 60nm; Shown in Figure 4 is the XRD figure of Al/ ZnO/ Al/ diamond multilayer membrane structure test; XRD figure can explain that the ZnO for preparing has the diffraction peak in very strong (002) crystal orientation, and because ZnO (004) peak is the second-order diffraction peak at (002) peak, it is high c-axle orientation that the explanation ZnO film appears in ZnO (004) peak.The ZnO film of high c-axle orientation has good piezoelectric effect, and adamas has very high SAW phase velocity, and the two combines, and can make the SAW device of preparation be issued to higher centre frequency and electromechanical coupling factor in the condition of identical interdigital width.
Interdigital transducer adopts double mode resonator structure, 26 pairs of interdigital logarithms; 4 groups of open circuit reflecting gratings are set, 9 pairs every group.Contact exposure and lithographic technique are adopted in the preparation of transducer 4 and reflecting grating 6.
The IDT finger width of resonator is 1.1 μ m, and the thickness of IDT finger is 60nm, tag hub frequency 2.45GHz.
The coupling of 2 label antennas and design
Label adopts the single port resonator of multi-layer film structure, and many of its IDT exist wiring capacitance, therefore can think that the SAW label is a capacitive device, and every electrode all can form the capacitor equivalent structure with close electrode.
Use semiconductor parametric tester, the port identity of the surface acoustic wave single port resonator of the IDT/ ZnO/ Al/ diamond multilayer membrane structure prepared has been carried out actual measurement
,The direct capacitance of resonator port and port resistance are respectively 50.1914pf and 48.7 Ω.
Match and design a bending dipole antenna, the antenna dipoles arm adopts irregular bending form.Simultaneously, utilize the near field to be coupled constructing antennas, its resonance frequency is 2.45GHz, and is as shown in Figure 3.Wherein: dipole arm 11 connects feed mouth 16 through feeder line 12, and is connected with ground plate 15 through Babylon microstrip line 13.
It is aluminium base copper-clad plate (RF4) dielectric-slab that SAW RFID label bending dipole antenna is selected dielectric material.The profile of antenna is processed by copper sheet.
The real part of the input impedance of the coil of SAW RFID label bending dipole antenna and the decision of the coefficient of mutual inductance between broken line antenna.The function of the free inductance of coil of SAW RFID label bending dipole antenna is the imaginary part of input impedance.Regulate the real part and the imaginary part size of input impedance, can increase bandwidth greatly, can realize easily and antenna matching.
When theta=3 spent, the maximum gain of antenna was 0.192, increased 6.6 times than traditional dipole antenna gain 0.029, so the tag recognition distance of the novel dipole antenna of employing is that the distance of traditional dipole antenna is more than 2 times.
3. the encapsulation of label
After more than making label, under the satisfactory situation of measurement result, can encapsulate, just can make a complete surface acoustic wave label label.In order to adapt to the RFID chip of smaller szie, reduce production costs effectively, adopting the bonding of chip and antenna substrate to encapsulate to be divided into two modules to accomplish respectively is present Development Trend.Wherein specific practice is: large-sized antenna substrate is made respectively with the fritter substrate that is connected chip, after accomplishing chip attachment on the fritter substrate and interconnecting, accomplishes circuit turn-on with the large-size antennae substrate through the adhesion of large bonding pad again.With above-mentioned to divide method like two module class with encapsulation process be that chip is transferred to earlier on the carrier band of equidistant carries chips, again the flip-chip on the carrier band is attached to antenna substrate.In this method, the upside-down mounting of chip is to lean on the mode of carrier band turnup to realize, has simplified the pick-up operation of chip, thereby can realize higher production efficiency.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is specified with reference to embodiment; Those of ordinary skill in the art is to be understood that; Technical scheme of the present invention is made amendment or replacement on an equal basis, do not break away from the spirit and the scope of technical scheme of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. the acoustic surface wave radio frequency identification label of an IDT/ ZnO/ Al/ diamond multilayer membrane structure; Comprise single port resonator and label antenna; It is characterized in that said single port resonator adopts IDT/ ZnO/ Al/ diamond multilayer membrane structure; Be on silicon substrate, to adopt microwave plasma CVD legal system to be equipped with diamond film, on diamond film, make the Al film of deposited by electron beam evaporation systems produce 40nm-100nm thickness, on the Al film, use the ZnO film of rf magnetron sputtering systems produce C-axle orientation again; On ZnO film, make deposited by electron beam evaporation systems produce metal film at last, prepare interdigital transducer and open circuit reflecting grating on the resonator through photoetching again; Said label antenna is the bending dipole antenna.
2. according to the acoustic surface wave radio frequency identification label of the described IDT/ ZnO/ of claim 1 Al/ diamond multilayer membrane structure; It is characterized in that diamond film thickness is greater than 3 times of the surface acoustic wave wavelength that is determined by this tag hub frequency in the said IDT/ ZnO/ Al/ diamond multilayer membrane structure.
3. according to the acoustic surface wave radio frequency identification label of claim 1 or 2 described IDT/ ZnO/ Al/ diamond multilayer membrane structures; It is characterized in that in the said IDT/ ZnO/ Al/ diamond multilayer membrane structure; The average departure degree of the ZnO film of C-axle orientation is less than＜1 °, and thickness is the wavelength of 1/5-1/4 surface acoustic wave.
4. according to the acoustic surface wave radio frequency identification label of the described IDT/ ZnO/ of claim 1 Al/ diamond multilayer membrane structure, it is characterized in that the interdigital logarithm in the said interdigital transducer is that 24-28 is right.
5. according to the acoustic surface wave radio frequency identification label of the described IDT/ ZnO/ of claim 4 Al/ diamond multilayer membrane structure, it is characterized in that said interdigital electrode width is 0.4 μ m-1.2 μ m, interdigital electrode thickness is 40nm-150nm.
6. according to the acoustic surface wave radio frequency identification label of the described IDT/ ZnO/ of claim 1 Al/ diamond multilayer membrane structure, it is characterized in that said reflecting grating is the open circuit reflecting grating, the 4-8 group is set, every group of 9-11 is right.
7. according to the acoustic surface wave radio frequency identification label of claim 5 or 6 described IDT/ ZnO/ Al/ diamond multilayer membrane structures; It is characterized in that said interdigital transducer and reflecting grating are on the metal film Al of electron beam evaporation systems produce, prepare the shape of interdigital transducer and reflecting grating through photoetching technique.
8. according to the acoustic surface wave radio frequency identification label of the described arbitrary IDT/ ZnO/ Al/ diamond multilayer membrane structure of claim 1-7, it is characterized in that the dipole arm of said bending dipole antenna adopts the irregular right angle of spacing distance folding type back and forth.
9. according to the acoustic surface wave radio frequency identification label of the described IDT/ ZnO/ of claim 8 Al/ diamond multilayer membrane structure, what it is characterized in that the making of said bending dipole antenna adopts is aluminium base copper-clad plate RF4 dielectric-slab, and the profile of antenna is to be processed by copper sheet.
10. according to the acoustic surface wave radio frequency identification label of claim 8 or 9 described IDT/ ZnO/ Al/ diamond multilayer membrane structures, it is characterized in that said label frequency is 2.45GHz-5.8.GHz.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102903004A (en) * | 2012-09-18 | 2013-01-30 | 盛世铸成科技(北京)有限公司 | Passive tag for electronic tag field |
| CN113659955A (en) * | 2021-08-20 | 2021-11-16 | 南通大学 | Surface acoustic wave amplifier capable of realizing wavelet reconstruction function |
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| CN1592099A (en) * | 2003-08-29 | 2005-03-09 | 精工爱普生株式会社 | Surface acoustic wave element and electronic equipment provided with the element |
| CN1881236A (en) * | 2005-06-17 | 2006-12-20 | 上海古盛电子科技有限公司 | Surface acoustic wave radio frequency identification label and manufacturing method thereof |
| CN101018045A (en) * | 2006-02-08 | 2007-08-15 | 精工爱普生株式会社 | Elastic surface wave element and electronic device |
| CN101388346A (en) * | 2007-09-12 | 2009-03-18 | 中国科学院半导体研究所 | Process for growing ZnO thin-film on Si substrate |
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Patent Citations (5)
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| US20040056735A1 (en) * | 2002-09-25 | 2004-03-25 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, and communication apparatus |
| CN1592099A (en) * | 2003-08-29 | 2005-03-09 | 精工爱普生株式会社 | Surface acoustic wave element and electronic equipment provided with the element |
| CN1881236A (en) * | 2005-06-17 | 2006-12-20 | 上海古盛电子科技有限公司 | Surface acoustic wave radio frequency identification label and manufacturing method thereof |
| CN101018045A (en) * | 2006-02-08 | 2007-08-15 | 精工爱普生株式会社 | Elastic surface wave element and electronic device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102903004A (en) * | 2012-09-18 | 2013-01-30 | 盛世铸成科技(北京)有限公司 | Passive tag for electronic tag field |
| CN113659955A (en) * | 2021-08-20 | 2021-11-16 | 南通大学 | Surface acoustic wave amplifier capable of realizing wavelet reconstruction function |
| CN113659955B (en) * | 2021-08-20 | 2024-01-09 | 南通大学 | Surface acoustic wave amplifier capable of realizing wavelet reconstruction function |
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Inventor after: Yang Baohe Inventor after: Zhang Rui Inventor after: Sun Sujuan Inventor after: Xu Cheng Inventor after: Li Cuiping Inventor before: Yang Baohe Inventor before: Sun Sujuan Inventor before: Xu Cheng Inventor before: Li Cuiping |
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Free format text: CORRECT: INVENTOR; FROM: YANG BAOHE SUN SUJUAN XU SHENG LI CUIPING TO: YANG BAOHE ZHANG RUI SUN SUJUAN XU SHENG LI CUIPING |
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Application publication date: 20120711 |