CN102566310A - Light energy monitoring system for photolithographic system - Google Patents
Light energy monitoring system for photolithographic system Download PDFInfo
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- CN102566310A CN102566310A CN2012100092254A CN201210009225A CN102566310A CN 102566310 A CN102566310 A CN 102566310A CN 2012100092254 A CN2012100092254 A CN 2012100092254A CN 201210009225 A CN201210009225 A CN 201210009225A CN 102566310 A CN102566310 A CN 102566310A
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Abstract
The invention relates to a photolithographic device in the field of photolithography manufacturing in a semiconductor or PCB (Printed Circuit Board) industry, in particular to a light energy monitoring system for a photolithographic system. The light energy monitoring system comprises a light source, a light transmission assembly and a projection exposure assembly, wherein a first photosensitive probe which is used for monitoring light intensity is arranged on a light path between the light source and the light transmission assembly and/or a light path between the light transmission assembly and the projection exposure assembly, a second photosensitive probe which is used for monitoring the light intensity is arranged at an emitting end of the projection exposure assembly, and signal output ends of the first photosensitive probe and the second photosensitive probe are connected with a computer. The computer in the light energy monitoring system can be used for automatically adjusting or sending out an alarm and manually adjusting the power of the light source according to the ratio of the light intensities detected by the first photosensitive probe and the second photosensitive probe, thus the constancy of exposure light intensity at the position of a substrate is ensured, and the stability of the photolithographic system is further ensured.
Description
Technical field
The present invention relates to semiconductor and PCB industry and make the lithographic equipment in the field of lithography, be specifically related to a kind of luminous energy monitoring system that is used for etching system.
Background technology
Photoetching technique is to be used for the composition that printing has characteristic on substrate surface.Such substrate can comprise be used for producing the semiconductor devices, the substrate of multiple integrated circuit, flat-panel screens (for example LCD), circuit board, biochip, micromechanics electronic chip, photoelectron circuit chip etc.The substrate that often uses has the semiconductor wafer of photaesthesia medium, glass substrate or pcb board etc. as exterior view.
In photoetching process, substrate is placed on the chip bench, through being in the exposure device in the lithographic equipment, characteristic composition is projected wafer surface.Although in photoetching process, used projecting optical device, also can use different type exposure devices according to concrete application.The different exposure devices of X ray, ion, electronics or photon photoetching for example, this is well known to those skilled in the art.
Traditional etching system uses substep repeat or substep scan-type lithography tool, with the characteristic composition of graticule in each projection once or scan on the wafer, single exposure or scan a field.Then through moving the exposure process that wafer comes next field is carried out repeatability.Traditional etching system is realized the accurate printing of characteristic composition through repeatability exposure or scanning process.
The graticule with specific image encoding is used in the manufacturing of traditional lithographic images, produces the certain spatial light power and the modulation of phase place, and focused light projects on the light sensor through graticule then.Each graticule is configured to a single image.
No mask (as directly writing or digital etc.) etching system has plurality of advantages with respect to the conventional lithography system aspect photoetching.No mask system usage space pattern generator (SLM) replaces graticule.SLM comprises digital micro-mirror system (DMD) or LCD (LCD), and SLM comprises independently addressable and a control pel array, and each pixel can produce the modulation that comprise phase place, gray scale direction or on off state to the light of transmission, reflection or diffraction.
In the etching system of no mask, feature pattern is produced by the space micro reflector array, these small minute surfaces can independent addressing controlled light beam separately with different vergence direction reflected illumination, to produce the spatial light power modulation.Through the optical projection element, these space micro reflector arrays project on the substrate of light sensor with certain enlargement ratio M (M＜1 usually), produce the composition of characteristic.
The luminous energy monitoring system of existing litho machine can only be monitored the luminous power of light source, to the subsequent optical element along with the variation of the utilization ratio of optical energy that prolongation produced of the working time monitoring of then having no idea.This traditional luminous energy monitoring system especially exposes the effect of monitoring and actual exposure in using the etching system of SLM inconsistent; Mainly be that the SLM mirror is owing to the long-time illumination of ultraviolet by force makes SLM mirror utilization ratio of optical energy change, so every mistake two time-of-weeks just need use the mode of exposure that traditional luminous energy monitoring system is demarcated again.This shows that traditional luminous energy monitoring system is inefficiency not only, and comparatively harsh to the conditional request of other relevant technological processes of photolithographic exposure, therefore demand urgently improving.
Summary of the invention
The purpose of this invention is to provide a kind of luminous energy monitoring system that is used for etching system, native system is not only simple in structure, high efficiency, and can monitor the changing condition with the utilization ratio of optical energy that prolongation produced of working time in the etching system.
For realizing the foregoing invention purpose, the technical scheme that the present invention adopted is: a kind of luminous energy monitoring system that is used for etching system, native system comprise light source, optical transmission module, projection exposure assembly; Light path between light path between said light source and the optical transmission module and/or optical transmission module and the projection exposure assembly is provided with first sensitive probe of monitoring light intensity, and the exit end of said projection exposure assembly is provided with second sensitive probe of monitoring light intensity; The signal output part of said first sensitive probe and second sensitive probe all links to each other with computing machine.
Simultaneously, the present invention can also be able to further realization through following technical measures:
Said first sensitive probe links to each other with computing machine through the first sensitive probe controller, and second sensitive probe links to each other with computing machine through the second sensitive probe controller.
Said optical transmission module comprises first lens or lens combination, beam splitter, second lens or the lens combination that sets gradually along the transmission direction of light; Said projection exposure assembly comprises pattern generator and the 3rd lens or the lens combination that sets gradually along the projecting direction of light; The light that light source sends is projected to the pattern generator place through first lens or lens combination, beam splitter, second lens or lens combination successively, light via the pattern generator reflection after through the 3rd lens or lens combination and outgoing to the second sensitive probe place; Said first sensitive probe is arranged on the side of beam splitter, and first sensitive probe is used to monitor the light intensity of light beam that beam splitter is told.
Native system also comprises article carrying platform, and said second sensitive probe is arranged on the article carrying platform.
The position of said second sensitive probe or article carrying platform move the light that makes from the 3rd lens or lens combination outgoing and all get into second sensitive probe under the control of platform mobile controller, said light source all links to each other with computing machine with the platform mobile controller.
Ratio between the light intensity that the light intensity that first sensitive probe is detected during the etching system initialization and second sensitive probe are detected is initial light intensity ratio, and the ratio between the light intensity that the light intensity that first sensitive probe was detected when etching system worked on and second sensitive probe are detected is the work light intensity ratio; Said computer judges is also preserved initial light intensity ratio; And when etching system works on according to setting-up time at interval initial light intensity ratio of timing ratio and work light intensity ratio; When work light intensity ratio during greater than initial light intensity ratio; Computing machine is through the intensity of light-source controller controls light beam that light source sends, so that the light intensity that second sensitive probe is detected maintenance is constant.
Beneficial effect of the present invention is: comprise first sensitive probe and second sensitive probe in this luminous energy monitoring system; Also be to be provided with two sensitive probes in this luminous energy monitoring system at least; And the signal output part of first sensitive probe and second sensitive probe all links to each other with computing machine; The ratio of the light intensity that computing machine is detected according to first sensitive probe and second sensitive probe; Automatically adjust or give the alarm and the power of artificial adjustment light source, thereby the exposure light intensity of guaranteeing the substrate place keeps constant, and then guaranteed the stability of etching system.
Description of drawings
Fig. 1 is a structural representation of the present invention.
The implication of mark is following among the figure:
1-light source 2-first lens or lens combination 3-beam splitter
The 4-first sensitive probe 5-, second lens or lens combination 6-pattern generator
7-the 3rd lens or the lens combination 8-second sensitive probe 9-substrate
The 10-article carrying platform 11A-light source controller 11B-first sensitive probe controller
The 11C-pattern generator controller 11D-second sensitive probe controller
11E-platform mobile controller 12-motor 13-computing machine
Embodiment
As shown in Figure 1, a kind of luminous energy monitoring system that is used for etching system, native system comprises light source, optical transmission module, projection exposure assembly; Light path between light path between said light source 1 and the optical transmission module and/or optical transmission module and the projection exposure assembly is provided with first sensitive probe 4 of monitoring light intensity, and the exit end of said projection exposure assembly is provided with second sensitive probe 8 of monitoring light intensity; The signal output part of said first sensitive probe 4 and second sensitive probe 8 all links to each other with computing machine 13.
Said first sensitive probe 4 is arranged on the light path and/or the light path between optical transmission module and the projection exposure assembly between light source 1 and the optical transmission module; Be the light intensity that first sensitive probe 4 both can select directly to monitor light that light source sends also, can also select to monitor light intensity through behind other optical elements.
Preferably, said first sensitive probe 4 links to each other with computing machine 13 through the first sensitive probe controller 11B, and second sensitive probe 8 links to each other with computing machine 13 through the second sensitive probe controller 11D.
The model of said first sensitive probe 4 and second sensitive probe 8 can be identical, also can be inequality, select according to actual conditions by the staff.
Further, said optical transmission module comprises first lens or lens combination 2, beam splitter 3, second lens or the lens combination 5 that sets gradually along the transmission direction of light; Said projection exposure assembly comprises pattern generator 6 and the 3rd lens or the lens combination 7 that sets gradually along the projecting direction of light; The light that light source 1 sends is projected to pattern generator 6 places through first lens or lens combination 2, beam splitter 3, second lens or lens combination 5 successively, light via pattern generator 6 reflections after through the 3rd lens or lens combination 7 and outgoing to the second sensitive probe 8 places; Said first sensitive probe 4 is arranged on the side of beam splitter 3, and first sensitive probe 4 is used to monitor 3 light intensity of telling light beam of beam splitter.
First sensitive probe 4 is used to monitor 3 light intensity of telling light beam of beam splitter, and also promptly this moment, first sensitive probe 4 not only can be monitored light intensity, and first sensitive probe 4 can not influence the operate as normal of etching system.
Preferably, as shown in Figure 1, native system also comprises article carrying platform 10, and said second sensitive probe 8 is arranged on the article carrying platform 10.
Further; The position of said second sensitive probe 8 or article carrying platform 10 move the light that makes from the 3rd lens or lens combination 7 outgoing and all get into second sensitive probe 8 under the control of platform mobile controller 11E, so that the exposure light intensity at light intensity that second sensitive probe 8 is detected and substrate 9 places is consistent; Said light source 1 all links to each other with computing machine 13 with platform mobile controller 11E.
Ratio between the light intensity that the light intensity that first sensitive probe 4 is detected during the etching system initialization and second sensitive probe 8 are detected is initial light intensity ratio, and the ratio between the light intensity that the light intensity that first sensitive probe 4 was detected when etching system worked on and second sensitive probe 8 are detected is the work light intensity ratio; Said computing machine 13 judgements are also preserved initial light intensity ratio; And when etching system works on according to setting-up time at interval initial light intensity ratio of timing ratio and work light intensity ratio; When work light intensity ratio during greater than initial light intensity ratio; Computing machine 13 is through 1 intensity of sending light beam of light source controller 11A control light source; So that the light intensity that second sensitive probe 8 is detected maintenance is constant, also promptly make the exposure light intensity at substrate 9 places keep constant.
Below in conjunction with Fig. 1 the course of work of the present invention is elaborated:
As shown in Figure 1, the luminous energy monitoring system comprises light source 1, first lens or lens combination 2, beam splitter 3, first sensitive probe 4, second lens or lens combination 5, pattern generator 6, the 3rd lens or lens combination 7, second sensitive probe 8, article carrying platform 10, light source controller 11A, the first sensitive probe controller 11B, the second sensitive probe controller 11D, platform mobile controller 11E, motor 12, computing machine 13.
1), said first sensitive probe 4 is arranged on the side of beam splitter 3, beam splitter makes partial illumination light get into first sensitive probe 4;
2), on the article carrying platform that is mounted with substrate 9 10, fixedly install second sensitive probe 8; And pass through computing machine 13 to platform mobile controller 11E output signal; Platform mobile controller 11E drives article carrying platform 10 motions through motor 12, makes exposure light all get into second sensitive probe 8;
3), record the light intensity D1 at first sensitive probe, 4 places and the light intensity D2 at second sensitive probe, 8 places simultaneously respectively through computing machine 13;
4), computing machine 13 obtains and preserve the M1 value, M1=D1: D2, said M1 are the loss value that the optical element behind the beam splitter 3 causes luminous energy;
5), add man-hour carrying out sample when litho machine, through computing machine 13 the light intensity D1 ' at monitoring first sensitive probes 4 places and the light intensity D2 ' at second sensitive probe, 8 places in real time, computing machine 13 obtains the M2 value, M2=D1 ': D2 '; Computing machine 13 is judged the size of M1 value and M2 value; Simultaneous computer 13 is through 1 intensity of sending light beam of light source controller 11A control light source; Just can realize real-time monitoring the light intensity of exposure, also promptly make the exposure light intensity at substrate 9 places keep constant at processed sample place.
Claims (6)
1. luminous energy monitoring system that is used for etching system, it is characterized in that: native system comprises light source, optical transmission module, projection exposure assembly; Light path between light path between said light source and the optical transmission module and/or optical transmission module and the projection exposure assembly is provided with first sensitive probe of monitoring light intensity, and the exit end of said projection exposure assembly is provided with second sensitive probe of monitoring light intensity; The signal output part of said first sensitive probe and second sensitive probe all links to each other with computing machine.
2. the luminous energy monitoring system that is used for etching system according to claim 1; It is characterized in that: said first sensitive probe links to each other with computing machine through the first sensitive probe controller, and second sensitive probe links to each other with computing machine through the second sensitive probe controller.
3. the luminous energy monitoring system that is used for etching system according to claim 1 is characterized in that: said optical transmission module comprises first lens or lens combination, beam splitter, second lens or the lens combination that sets gradually along the transmission direction of light; Said projection exposure assembly comprises pattern generator and the 3rd lens or the lens combination that sets gradually along the projecting direction of light; The light that light source sends is projected to the pattern generator place through first lens or lens combination, beam splitter, second lens or lens combination successively, light via the pattern generator reflection after through the 3rd lens or lens combination and outgoing to the second sensitive probe place; Said first sensitive probe is arranged on the side of beam splitter, and first sensitive probe is used to monitor the light intensity of light beam that beam splitter is told.
4. the luminous energy monitoring system that is used for etching system according to claim 3, it is characterized in that: native system also comprises article carrying platform, and said second sensitive probe is arranged on the article carrying platform.
5. the luminous energy monitoring system that is used for etching system according to claim 4; It is characterized in that: the position of said second sensitive probe or article carrying platform move the light that makes from the 3rd lens or lens combination outgoing and all get into second sensitive probe under the control of platform mobile controller, said light source all links to each other with computing machine with the platform mobile controller.
6. according to each described luminous energy monitoring system that is used for etching system of claim 1～5; It is characterized in that: the ratio between the light intensity that the light intensity that first sensitive probe is detected during the etching system initialization and second sensitive probe are detected is initial light intensity ratio, and the ratio between the light intensity that the light intensity that first sensitive probe was detected when etching system worked on and second sensitive probe are detected is the work light intensity ratio; Said computer judges is also preserved initial light intensity ratio; And when etching system works on according to setting-up time at interval initial light intensity ratio of timing ratio and work light intensity ratio; When work light intensity ratio during greater than initial light intensity ratio; Computing machine is through the intensity of light-source controller controls light beam that light source sends, so that the light intensity that second sensitive probe is detected maintenance is constant.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100092254A CN102566310A (en) | 2012-01-12 | 2012-01-12 | Light energy monitoring system for photolithographic system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100092254A CN102566310A (en) | 2012-01-12 | 2012-01-12 | Light energy monitoring system for photolithographic system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108535878A (en) * | 2018-04-17 | 2018-09-14 | 清华大学 | Stablize the method for quantum light source and stablizes quantum light source |
| CN114509920A (en) * | 2022-01-12 | 2022-05-17 | 源纳微光学科技(苏州)有限公司 | Energy calibration module and calibration method |
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| WO2009005808A1 (en) * | 2007-07-03 | 2009-01-08 | Ioannis Kymissis | Software-controlled maskless optical lithography using fluorescence feedback |
| WO2009050976A1 (en) * | 2007-10-16 | 2009-04-23 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108535878A (en) * | 2018-04-17 | 2018-09-14 | 清华大学 | Stablize the method for quantum light source and stablizes quantum light source |
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Application publication date: 20120711 |