CN102566040B - Micro electro mechanical system (MEMS) display - Google Patents
Micro electro mechanical system (MEMS) display Download PDFInfo
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- CN102566040B CN102566040B CN201010607808.8A CN201010607808A CN102566040B CN 102566040 B CN102566040 B CN 102566040B CN 201010607808 A CN201010607808 A CN 201010607808A CN 102566040 B CN102566040 B CN 102566040B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
Abstract
The invention provides a micro electro mechanical system (MEMS) display. The MEMS display comprises pixel array zones and a light source, wherein the pixel array zones are independent from each other; each pixel array zone comprises pixel units arranged in array; and light beams generated by the light source are emergent from the pixel units to form images through multistage light path transfer switch routes after entering the pixel array zones. According to the MEMS display provided by the invention, alternative light path transfer switches are adopted to serve as route nodes of light paths. The MEMS display has the characteristics of sensitive response and rapid imaging displaying.
Description
Technical field
The present invention relates to micromechanics Mechatronic Systems (MEMS) field, particularly a kind of light path change-over switch based on the MEMS technology and use described light path change-over switch to realize the MEMS display that image shows.
Background technology
LCD TV and other flat-panel monitors, become electric consumers common in social life.How further to reduce the size of flat-panel monitor, its plate thickness of attenuate, be one of developing direction of flat-panel monitor.Because the light source of liquid crystal indicator must be arranged at the back side of panel or be embedded in panel, could obtain the homogeneity of brightness preferably and gray scale, therefore the thickness arranged the attenuate panel of above-mentioned light source has brought larger difficulty.
Adopting the light path change-over switch making flat-panel monitor of physical construction is alternative replacement scheme of liquid crystal display.The light path change-over switch of machinery is the light beam of route light source rapidly, and it is shown at required pixel region, thereby obtains good visual angle and large-scale color, gray scale display image content.Described light source can be independent of pixel array region, and is arranged at the optional position of panel, thereby is conducive to dwindle the plate thickness of display.The United States Patent (USP) more about utilizing the light path change-over switch of physical construction, that the content of making the MEMS display can be US2006006448 referring to the patent No..
Although adopt the light path change-over switch of MEMS technology to succeed in projection display applications, yet lack substantial breakthrough in panel display apparatus.Make sensitive reliable light path change-over switch, and it is applied in the MEMS display, become the main direction of studying of MEMS display.
Summary of the invention
The problem that the present invention solves is to provide a kind of MEMS display of applying the light path change-over switch, has a control gear simple, is easy to the characteristics of manufacturing.
A kind of MEMS display provided by the invention.Comprise separate pixel array region and light source, described pixel array region comprises the pixel cell of array arrangement, after the light beam incident pixel array region that described light source produces, and through multistage light path change-over switch route, outgoing imaging from pixel cell.
Described light path change-over switch, comprise an input light path, two output light paths and light path converting element, and described light path converting element optionally routes to one of them output light path from input light path by light beam, and described light path converting element comprises:
The interlayer dielectric layer on Semiconductor substrate and surface thereof; Be positioned at the cavity of interlayer dielectric layer, an end of described cavity connects input light path, and the other end is partitioned into upper plenum and lower cavity by separation layer, and described upper plenum and lower cavity connect respectively two output light paths; Be positioned at the elastic conducting mating plate of described cavity, described elastic conducting mating plate is reflectorized material, comprises the stiff end that is connected in described separation layer and the free end in input light path is suspended in cavity; The field of force impact that described free end is subject to putting in cavity is moved between cavity bottom at the cavity top.
Described light path converting element also comprises the upper ductor that lays respectively at cavity top and bottom, lower ductor, by described upper ductor and the energising of lower ductor, forms the field of force perpendicular to the optic path path in cavity; The free end of described elastic conducting mating plate is arranged in the described field of force.
Optionally, described upper ductor and lower ductor are positioned on the wall of cavity chamber or as the part of cavity chamber wall, and the remainder of described upper ductor and lower ductor and cavity chamber wall insulation isolation.
Optionally, described upper ductor and lower ductor are positioned at the interlayer dielectric layer of cavity outside, and by interlayer dielectric layer and cavity chamber wall separately.
Optionally, the inside surface of described cavity chamber wall is coated with reflectance coating.
Optionally, the free end width of described elastic conducting mating plate is greater than the stiff end width.The cross section of described cavity is rectangle, and cross-sectional width successively decreases to the stiff end direction gradually along the free end of elastic conducting mating plate, keeps cavity sidewalls consistent with the gap length of elastic conducting mating plate.
Optionally, be filled with light transmission medium in described upper plenum and lower cavity.
Optionally, described pixel array region comprises capable light path change-over switch, row light path change-over switch and the thin film transistor (TFT) of controlling above-mentioned light path change-over switch; Described incident beam is first via row light path change-over switch route, then via row light path change-over switch route, outgoing from pixel cell.
Optionally, the light source type of described MEMS display is three-color light source, comprises RGB primaries or CMY primaries.
Optionally, described pixel array region comprises an input path, described primaries timesharing input, and via multistage light path change-over switch route, outgoing from pixel cell.
Optionally, described pixel array region comprises the first sub-pixel column, the second sub-pixel column and the 3rd sub-pixel column, above-mentioned three sub-pixel column cycle repeated arrangement; Described each first sub-pixel column has the first input path, and described each second sub-pixel column has the second input path, and described each the 3rd sub-pixel column has the 3rd input path; Described primaries is respectively from above-mentioned three input path incidents, and via multistage light path change-over switch route, outgoing from the pixel cell of corresponding sub-pixel column.
Optionally, described light source type is polarization 3D light, comprises P polarized light and S polarized light.
Optionally, described pixel array region comprises the first polarized pixels row, the second polarized pixels row that are arranged alternately; Described each the first polarized pixels row have the first polarized incident light road, and described each the second polarized pixels row have the second polarized incident light road; Described P polarized light and S polarized light are corresponding to above-mentioned two polarized incident light road incidents respectively, and via multistage light path change-over switch route, outgoing from the pixel cell of corresponding polarized pixels row.
Optionally, described light source type is white light.Optionally, described pixel array region comprises the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit of array arrangement, and described different types of sub-pixel unit has the color film of different colours; ; Described pixel array region comprises an input path, and described white light is from above-mentioned input path incident, and, via multistage light path change-over switch route, sees through described color film outgoing from sub-pixel unit.Described color film is formed at the pixel array region surface, and covers the output light path of the corresponding row light path of each sub-pixel unit change-over switch.
Optionally, in described pixel array region, the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit are periodic arrangement, and non-conterminous with the kind sub-pixel unit.
Optionally, the color category of described color film comprises RGB three primary colors or CMY three primary colors.
MEMS display of the present invention adopts the routing node of the light path change-over switch of alternative as light path, and adopts the mode of multistage route to realize the demonstration of pixel, has a response sensitive, the characteristics of Imaging fast.Described light path Switch structure is simple, and it is convenient to control, and is easy to manufacture.
The accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.In accompanying drawing, parts same as the prior art have been used identical Reference numeral.Accompanying drawing not drawn on scale, focus on illustrating purport of the present invention.In the accompanying drawings for clarity sake, layer and regional size have been amplified.
Fig. 1 is the structural representation of light path change-over switch of the present invention;
Fig. 2 is along the diagrammatic cross-section of A-A ' hatching line in Fig. 1;
Fig. 3 is along the diagrammatic cross-section of B-B ' hatching line in Fig. 1;
Fig. 4 is along the diagrammatic cross-section of C-C ' hatching line in Fig. 1;
Fig. 5 is the working state schematic representation of light path change-over switch of the present invention;
Fig. 6 is the first embodiment schematic diagram of MEMS display of the present invention;
Fig. 7 is along the diagrammatic cross-section of D-D ' hatching line in Fig. 6;
Fig. 8 is the second embodiment schematic diagram of MEMS display of the present invention;
Fig. 9 is the 3rd embodiment schematic diagram of MEMS display of the present invention;
Figure 10 is the 4th embodiment schematic diagram of MEMS display of the present invention.
Embodiment
Fig. 1 is the structural representation of light path change-over switch of the present invention.Described light path change-over switch comprises an input light path 100, output light path 201, output light path 202 and light path converting element 300, described light path converting element 300 optionally routes to one of them output light path from input light path 100 by light beam, and described light path change-over switch 300 only has two kinds of routing states.
Fig. 2 be in Fig. 1 along the diagrammatic cross-section of A-A ' hatching line, as shown in Figure 2, described light path converting element 300 comprises: Semiconductor substrate 301 and the surface interlayer dielectric layer 307 (Inter-level dielectric, ILD); Be positioned at the cavity 302 of interlayer dielectric layer 307, an end of described cavity 302 connects input light path 100, and the other end is partitioned into upper plenum 304 and lower cavity 305 by separation layer 303, and described upper plenum 304 and lower cavity 305 connect respectively two output light paths; Elastic conducting mating plate 306, described elastic conducting mating plate 306 comprises the stiff end that is connected in described separation layer 303 and is suspended in the free end in cavity towards input light path 100.Described free end can be subject to putting under the field of force impact in cavity 302, between top to the bottom of cavity 302, moves, and makes 306 bendings of elastic conducting mating plate.
For forming the above-mentioned field of force that makes 306 bendings of elastic conducting mating plate, the described light path converting element 300 of the present embodiment also comprises upper ductor 308, the lower ductor 309 that lays respectively at cavity top and bottom.By upwards ductor 308 and 309 energisings of lower ductor, can be in the interior formation of cavity 302 field of force perpendicular to the optic path path, and make described free end be arranged in this field of force.Described upper ductor 308 and lower ductor 309, material can be metal, such as copper, aluminium, tungsten etc.; Can be arranged on the wall of cavity chamber or, directly as the part of chamber wall, also can be arranged in the interlayer dielectric layer 307 of cavity outside.
As an optional embodiment, described light path change-over switch, when work, to described upper ductor 308 and 309 energisings of lower ductor, forms electric field in cavity 302; Then by connecting electrode to elastic conducting mating plate 306 iunjected charges, most advanced and sophisticated buildup effect according to electric charge, the free end of described elastic conducting mating plate 306 will be assembled electric charge, and to cavity 302 tops or bottom, move under the impact of cavity 302 internal electric fields, to control bending direction and the degree of crook of elastic conducting mating plate 306.As another optional embodiment, can also adopt magnetic material to make elastic conducting mating plate 306, and, by upwards ductor 308,309 energisings of lower ductor, form electromagnetic field in cavity, to control bending direction and the degree of crook of elastic conducting mating plate 306.In addition, if described upper ductor 308 and lower ductor 309 are arranged on the wall of cavity chamber or as the part of cavity chamber wall, need the remainder of this section cavity chamber wall and cavity chamber wall insulation isolation, to prevent that upper ductor 308 and lower ductor 309 are by the wall short circuit of cavity chamber or electric leakage.
Further, described elastic conducting mating plate 306 is plates, therefore there is directivity in its elastic bending, for the bending direction that makes elastic conducting mating plate 306 and the position of upper ductor 308 and lower ductor 309 match, and can seal the cross section of upper plenum 304 or lower cavity 305 after bending, need make the elastic surface of elastic conducting mating plate 306 perpendicular to the projecting plane between upper ductor 308 and lower ductor 309.
It should be noted that, in MEMS (micro electro mechanical system), the structure of above-mentioned light path converting element 300 is compatible mutually with semiconductor technology, and above-mentioned upper ductor 308, lower ductor 309 and elastic conducting mating plate 306 all need connecting electrode.As possibility, the stiff end of described elastic conducting mating plate 306 can extend in interlayer dielectric layer 307 by the self-isolation layer, in order to form the contact hole connecting electrode.The present embodiment, though not shown above-mentioned concrete metal interconnect structure, as known technology, those skilled in the art should carry out the making of contact hole according to metal interconnected needs, repeat no more herein.
Described Semiconductor substrate 301 is silicon substrate or silicon-on-insulator SOI.Described cavity 302 is formed in the interlayer dielectric layer 307 on Semiconductor substrate 301 surfaces, and described interlayer dielectric layer 307 is for the isolation cavity 302 that insulate, and its material can be silicon dioxide, silicon nitride etc.
The inside surface of described cavity 302 must folded light beam, as a kind of possibility, can form reflectance coating at the inside surface of cavity 302, as alternative dispensing means, described cavity chamber wall can adopt the metal material of high reflectance, metal or its combinations such as aluminium, titanium, zinc, silver.In the present embodiment, for reducing costs, and compatible mutually with semiconductor fabrication process, described cavity chamber wall adopts aluminium material.
Described elastic conducting mating plate 306 must folded light beam and can be crooked in cavity, as possibility, can adopt the metal material of high reflectance, metal or its combinations such as aluminium, titanium, zinc, silver.Further, in order to improve elastic conducting mating plate 306 in use, because of the frequent crooked metal fatigue phenomenon caused, can form on the surface of elastic conducting mating plate 306 monox or the silicon nitride plated film of skim, to improve the tension force on elastic conducting mating plate 306 surfaces.In the present embodiment, equally in order to reduce costs, and compatible mutually with semiconductor fabrication process, described elastic conducting mating plate 306 adopts aluminium material, and surface is coated with one deck silicon nitride film.In addition, because aluminium is conducting metal, while for the free end of avoiding elastic conducting mating plate 306, moving to cavity top or bottom, contact and cause contact short circuit with upper ductor 308 or lower ductor 309, described upper ductor 308 and lower ductor 309 are arranged in the interlayer dielectric layer 307 of cavity outside, and by interlayer dielectric layer 307 and cavity chamber wall separately.
According to aforementioned principles, the free end of elastic conducting mating plate 306 must be able to move to top or the bottom of cavity 302, make 306 bendings of elastic conducting section of jurisdiction, stop the light beam of injecting cavity from input light path enter upper plenum 304 or cavity 305.For improving the crooking ability of elastic conducting mating plate 306, can be so that the free end width of elastic conducting mating plate 306 be greater than the stiff end width.Fig. 3 be in Fig. 1 along the diagrammatic cross-section of B-B ' hatching line, as shown in Figure 3, be simplified manufacturing technique, the cross section of described cavity 302 can be chosen as rectangle; On the other hand, after reducing by 306 bendings of elastic conducting mating plate, and the gap location light leak between the wall of cavity chamber, the cross-sectional width D of described cavity successively decreases to the direction of stiff end gradually along elastic conducting mating plate 306 free ends, keeps elastic conducting mating plate 306 consistent with the gap length between the wall of cavity chamber.Except above preferred embodiment, the shape of described cavity cross section can also be ellipse type, trapezoidal etc., and only needing to meet elastic conducting mating plate 306 can be at the interior free bend of cavity 302, and the light path that stops light beam to enter upper plenum 304 or lower cavity 305 gets final product.
Again as shown in Figure 2, because the stiff end of elastic conducting mating plate 306 is connected in separation layer 303, for supporting separation layer 303 to avoid the vertical misalignment of elastic conducting mating plate 306, as possibility, described upper plenum 304 and lower cavity 305 are interior can also be filled with light transmission medium, such as the quartz that comprises silica composition, glass etc.
Fig. 4 is along the diagrammatic cross-section of C-C ' hatching line in Fig. 1, shown in Fig. 1 and Fig. 4, as possibility, in the present embodiment, described upper plenum 308 and lower cavity 309, form stackingly near an end of elastic conducting mating plate 306 along A-A ' hatching line (along the vertical direction in Fig. 2), extend separation away from an end of elastic conducting mating plate, and connect respectively output light path 201 and output light path 202.
The working state schematic representation that Fig. 5 is light path change-over switch of the present invention, introduce the working mechanism of light path change-over switch of the present invention below in conjunction with Fig. 5.
Enter cavity 302 when needs make light beam from input light path 100, and export from output light path 201 via upper plenum 304.At first upwards ductor 308 and lower ductor 309 are switched on, and upper ductor 308 is connect to the negative terminal of power supply, and lower ductor 309 connect the anode of power supply, now just at the interior formation of cavity 302 electric field from bottom to top.The intensity of described electric field is determined by the electric potential difference between upper ductor 308 and lower ductor 309.Then inject electronics in elastic conducting mating plate 306, described electronics will be assembled at the free end of elastic conducting mating plate 306, and described free end is subject to the electric field force effect, and ductor 309 moves downwards.Only need be in the enough large electric field intensity of the interior formation of cavity 302, overcome self elastic force effect of elastic conducting mating plate 306, the free end of elastic conducting mating plate 306 is contacted with the bottom of cavity 302.Now, from the cross-wise direction of cavity 302, lower cavity 305 is sealed by elastic conducting mating plate 306.When light beam enters cavity 302 from input light path 100, at the inside surface of cavity 302 and the surperficial Multi reflection of elastic conducting mating plate 306, finally only can penetrate by upper plenum 304, routed to output light path 201 by selectivity.
Otherwise, when making light beam, needs enter cavity 302 from input light path 100, and via lower cavity 305 during from output light path 202 output, only need to be in the reversal connection of when energising ductor 308 and lower ductor 309, at the reverse electric field of the interior formation of cavity 302, make the free end of elastic conducting mating plate 306 ductor 308 that makes progress move, until contact with the top of cavity 302, thereby the cross section of sealing upper plenum 304.Described light beam only can penetrate by lower cavity 305, and is routed to output light path 202 by selectivity.
Above-mentioned light path change-over switch is as the construction of switch of alternative, realized from the selectivity route of input light path to two output light path, but in router, the ability that usually need to there is the output of multichannel input multichannel, therefore multistage above-mentioned light path change-over switch serial connection can be used, realize the route to light beam.
Based on above-mentioned light path change-over switch, the present invention also provides a kind of MEMS display, comprise separate pixel array region and light source, described pixel array region comprises the pixel cell of array arrangement, after the light beam incident pixel array region that described light source produces, through multistage light path change-over switch route, outgoing imaging from pixel cell.
Described pixel array region comprises capable light path change-over switch, row light path change-over switch and the thin film transistor (TFT) of controlling above-mentioned light path change-over switch.Concrete, can be by a ductor ground connection in each row light path change-over switch, row light path change-over switch, and another piece ductor is connected with power supply by described thin film transistor (TFT), conducting by controlling described thin film transistor (TFT) or close, form the electric field that drives the bending of elastic conducting mating plate in the light path change-over switch, and then control the switching of described light path change-over switch to light path.
Described incident beam, first via row light path change-over switch route, enters certain a line pixel cell, then via row light path change-over switch route, outgoing from this row row pixel cell.Said method is similar in liquid crystal display, by horizontal scanning line and column data line, chooses pixel cell to carry out the mechanism of imaging demonstration.
According to the difference of light source type, the working mechanism of described MEMS display also is not quite similar, and below in conjunction with specific embodiment, MEMS display of the present invention is described further.
the first embodiment
The MEMS display of first embodiment of the invention, described light source adopts the three primary colors light source, for example RGB three-primary colours (red, green, blue three looks) light source or CMY three primary colors (blue or green, pinkish red, Huang Sanse) light source.The MEMS display schematic diagram that Fig. 6 is described the first embodiment, comprise pixel array region I and light source II, and described pixel array region I only illustrates the pixel cell of 4x3 array.
As shown in Figure 6, the MEMS display of the present embodiment, only comprise an input light path L, when light beam, from described input light path L incident pixel array region I, at first needs through row light path change-over switch.Wherein, the corresponding row light path change-over switch of every row pixel cell.And light beam is after route enters certain row pixel cell, just need successively through space light path change-over switch, thereby from corresponding pixel cell outgoing.The corresponding capable light path change-over switch of each pixel cell wherein.
Fig. 7 is along the diagrammatic cross-section of D-D ' hatching line in Fig. 6, show the diagrammatic cross-section of capable light path change-over switch, in described row light path change-over switch, article two, output light path is mutually vertical, wherein perpendicular to pixel array region, also perpendicular to the output light path O2 of MEMS display pannel as light beam the exit direction from this pixel cell, another output light path O1 is connected in the input light path of next row optical path switch module.
In addition, when the elastic conducting mating plate in described light path change-over switch is crooked, described light path change-over switch can not play the effect of route, and light beam will be exported from two output light path shuntings of described light path change-over switch simultaneously, thereby plays the one-to-two function of light beam.For example work as light beam incident image pixel array and at first arrive row light path change-over switch K1, if its elastic conducting mating plate keeps original position not carry out leaded light, light beam is divided into continuation and transfers to the branch of next row light path change-over switch K2 and the branch that enters the first row pixel cell along input light path L.The purpose of above-mentioned one-to-two mechanism is, in light beam incident process, realizes that the imaging of a plurality of pixel cells shows simultaneously.
According to above-mentioned principle, if, when the MEMS display is worked, need to make a certain pixel cell carry out the imaging demonstration, only need to control corresponding row light path change-over switch and row light path change-over switch, incident beam is carried out to route, make described light beam get final product from this pixel cell outgoing.
In the MEMS display of the present embodiment, three kinds of primitive color lights of described three primary colors light source can adopt the timesharing input, the retentivity time of eye that can be less than human eye interval time of described timesharing input.When the described MEMS display of eye-observation, can form a plurality of pixels and show superimposed image, and the primitive color light of different light intensity is superimposed, visually just can form different color, thereby make the MEMS display of the present embodiment demonstrate colored figure.
the second embodiment
In above-described embodiment, although the light source of MEMS display can utilize the retentivity time of eye of human eye, primaries is inputted in timesharing, has simplified the light channel structure of display.But be of limited application, have limitation when high speed image dynamically shows.
The MEMS display schematic diagram that Fig. 8 is second embodiment of the invention, comprise pixel array region I and light source II, and described pixel array region I only illustrates the pixel cell of 4x3 array.Described light source adopts RGB or CMY three primary colors light source.
Shown in Fig. 8 and Fig. 6, the difference of the present embodiment and the first embodiment is that described pixel array region I has three input light paths, comprises the first input path L1, the second input path L2 and the 3rd input path L3, is respectively used to input three kinds of primitive color lights.
Accordingly, the pixel cell in described pixel array region is divided into the first sub-pixel column C1, the second sub-pixel column C2 and the 3rd sub-pixel column C3.Above-mentioned three sub pixels are listed in pixel array region and are periodic arrangement.Above-mentioned being arranged so that, the pixel cell in a kind of sub-pixel column only can a kind of primitive color light of outgoing, and three pixel cells of adjacent three sub pixels row can be considered as a pixel groups.
The primaries of described light source can the non-interfering while from three input path incidents, and separately via multistage light path change-over switch route, outgoing from the pixel cell of corresponding sub-pixel column.Concrete routing procedure is similar to the first embodiment.
In same pixel groups, the light intensity magnitude difference of the variety classes primitive color light of three pixel cell outgoing, just can visually form different color, thereby make MEMS display of the present invention demonstrate colored figure.
the 3rd embodiment
MEMS display of the present invention can also be applied to the demonstration of 3D rendering.
The MEMS display schematic diagram that Fig. 9 is third embodiment of the invention, comprise pixel array region I and light source II, and described pixel array region I only illustrates the pixel cell of 4x3 array.Described light source is the 3D polarized light.Concrete, described 3D polarized light comprises P polarized light and S polarized light.
Shown in Fig. 9 and Fig. 8, the difference of the present embodiment and the second embodiment only is the quantity of input light path.Concrete, described pixel array region has two input light paths, comprises the first polarized incident light road J1, the second polarized incident light road J2, is respectively used to input above-mentioned P polarized light and S polarized light.
Accordingly, the pixel cell in described pixel array region is divided into the first polarized pixels row D1 and the second polarized pixels row D2.Above-mentioned two kinds of polarized pixels are listed in pixel array region and are periodic arrangement, are also alternative arrangement.Above-mentioned being arranged so that, the pixel cell in a kind of polarized pixels row only can a kind of polarized light of outgoing, and two pixel cells of adjacent two kinds of polarized pixels row can be considered as a pixel groups.
The primaries of described light source can the non-interfering while from three input path incidents, and separately via multistage light path change-over switch route, outgoing from the pixel cell of corresponding sub-pixel column.Concrete routing procedure is similar to the first embodiment.
In same pixel groups, different types of polarized light of two pixel cell outgoing, can visually form the 3D figure, thereby make MEMS display of the present invention can carry out the 3 D stereo demonstration.
the 4th embodiment
In above embodiment, light source is all comparatively complicated, and corresponding primitive color light or polarized light need to be provided respectively.In order to simplify light source, can on the light beam outgoing path of pixel cell, color film be set, thereby produce the outgoing beam of different colours.Described pixel array region I only illustrates the pixel cell of 4x3 array.Described light source can be white light source.
Shown in Figure 10 and Fig. 6, the difference of the present embodiment and the first embodiment is, light source II produces single white light beam, and the pixel cell in pixel array region has the color film of different colours.Described color film can be organic film or the inorganic thin film layer that is covered in the pixel cell surface.
Concrete, described pixel array region only has an input light path J, and described white light, from input light path J incident, via multistage light path change-over switch route, sees through described color film outgoing from pixel cell.
The kind of described color film color can comprise RGB three primary colors or CMY three primary colors.According to the color of color film, described pixel cell is divided into the first sub-pixel unit E1, the second sub-pixel unit E2 and the 3rd sub-pixel unit E3.
As preferred scheme, above-mentioned three sub pixel unit periodic arrangement in pixel array region, and congener sub-pixel unit non-conterminous (both not all right adjacent, as also not to be listed as adjacent).Such three adjacent and different types of sub-pixel unit just can be considered as a pixel groups.From macroscopic perspective, above-mentioned pixel groups is point-like in pixel array region arranges, and can obtain best imaging effect.
When white light sees through color film outgoing from a certain pixel cell, the color of emergent light i.e. the color of the color film of this pixel cell.
In same pixel groups, the light intensity magnitude difference of three sub-pixel unit outgoing different colours light beams, can visually form different color, thereby make MEMS display of the present invention demonstrate colored figure.
In above three embodiment, light source only plays the effect that produces incident beam, and decision MEMS display shows image, is via after smooth change-over switch routes at different levels, from the light beam of each pixel cell outgoing.Can control corresponding light change-over switch by each thin film transistor (TFT) incident beam is carried out to the light path switching, just can further control the outgoing beam of each pixel cell.In described pixel array region, each pixel cell outgoing different light intensity of array arrangement, the light beam of color just can superpose and form the image of required demonstration on visual effect.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not break away from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection domain of technical solution of the present invention.
Claims (20)
1. a MEMS display, it is characterized in that, comprise separate pixel array region and light source, described pixel array region comprises the pixel cell of array arrangement, after the light beam incident pixel array region that described light source produces, through multistage light path change-over switch route, outgoing imaging from pixel cell; Described light path change-over switch comprises: input light path, two output light paths and light path converting element, and described light path converting element optionally routes to one of them output light path from input light path by light beam, and described light path converting element comprises:
The interlayer dielectric layer on Semiconductor substrate and surface thereof; Be positioned at the cavity of interlayer dielectric layer, an end of described cavity connects input light path, and the other end is partitioned into upper plenum and lower cavity by separation layer, and described upper plenum and lower cavity connect respectively two output light paths;
Be positioned at the elastic conducting mating plate of described cavity, described elastic conducting mating plate adopts reflectorized material, comprises the stiff end that is connected in described separation layer and the free end in input light path is suspended in cavity; Described free end, when being subject to putting on the field of force in cavity and affecting, moves between cavity bottom at the cavity top.
2. MEMS display as claimed in claim 1, it is characterized in that, described light path converting element also comprises the upper ductor that lays respectively at cavity top and bottom, lower ductor, by to described upper ductor and the energising of lower ductor, form the field of force perpendicular to the optic path path in cavity; The free end of described elastic conducting mating plate is arranged in the described field of force.
3. MEMS display as claimed in claim 2, is characterized in that, described upper ductor and lower ductor are arranged on the wall of cavity chamber or as the part of cavity chamber wall.
4. MEMS display as claimed in claim 3, is characterized in that, the described remainder insulation isolation that is provided with cavity chamber wall part and the cavity chamber wall of ductor and lower ductor.
5. MEMS display as claimed in claim 2, is characterized in that, described upper ductor and lower ductor are positioned at the interlayer dielectric layer of cavity outside, and by interlayer dielectric layer and cavity chamber wall separately.
6. MEMS display as claimed in claim 1, is characterized in that, the inside surface of described cavity chamber wall is coated with reflectance coating.
7. MEMS display as claimed in claim 1, is characterized in that, the free end width of described elastic conducting mating plate is greater than the stiff end width.
8. MEMS display as claimed in claim 7, is characterized in that, the cross section of described cavity is rectangle, and cross-sectional width successively decreases to the stiff end direction gradually along the free end of elastic conducting mating plate, keeps cavity sidewalls consistent with the gap length of elastic conducting mating plate.
9. MEMS display as claimed in claim 1, is characterized in that, in described upper plenum and lower cavity, is filled with light transmission medium.
10. MEMS display as claimed in claim 1, is characterized in that, described pixel array region comprises capable light path change-over switch, row light path change-over switch and the thin film transistor (TFT) of controlling above-mentioned light path change-over switch; Described incident beam is first via row light path change-over switch route, then via row light path change-over switch route, outgoing from pixel cell.
11. MEMS display as claimed in claim 10 is characterized in that described light source type is three-color light source, comprises RGB primaries or CMY primaries.
12. MEMS display as claimed in claim 11, is characterized in that, described pixel array region comprises an input path, and described primaries is from described input path incident, and via multistage light path change-over switch route, outgoing from pixel cell.
13. MEMS display as claimed in claim 11, is characterized in that, described pixel array region comprises the first sub-pixel column, the second sub-pixel column and the 3rd sub-pixel column, and above-mentioned three sub-pixel column are periodic arrangement in pixel array region; Described each first sub-pixel column has the first input path, and described each second sub-pixel column has the second input path, and described each the 3rd sub-pixel column has the 3rd input path; Described primaries is respectively from above-mentioned three input path incidents, and via multistage light path change-over switch route, outgoing from the pixel cell of corresponding sub-pixel column.
14. MEMS display as claimed in claim 10 is characterized in that described light source type is the 3D polarized light, comprises P polarized light and S polarized light.
15. MEMS display as claimed in claim 14, is characterized in that, described pixel array region comprises the first polarized pixels row, the second polarized pixels row of alternative arrangement; Described each the first polarized pixels row have the first polarized incident light road, and described each the second polarized pixels row have the second polarized incident light road; Described P polarized light and S polarized light are corresponding to above-mentioned two polarized incident light road incidents respectively, and via multistage light path change-over switch route, outgoing from the pixel cell of corresponding polarized pixels row.
16. MEMS display as claimed in claim 10, is characterized in that, described light source type is white light.
17. MEMS display as claimed in claim 16, it is characterized in that, described pixel array region comprises the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit of array arrangement, and described different types of sub-pixel unit has the color film of different colours; Described pixel array region comprises an input path, and described white light is from above-mentioned input path incident, and, via multistage light path change-over switch route, sees through described color film outgoing from sub-pixel unit.
18. MEMS display as claimed in claim 17, is characterized in that, described color film is formed at the pixel array region surface, and covers the output light path of the corresponding row light path of each sub-pixel unit change-over switch.
19. MEMS display as claimed in claim 17, is characterized in that, in described pixel array region, the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit are periodic arrangement, and non-conterminous with the kind sub-pixel unit.
20. MEMS display as claimed in claim 17, is characterized in that, the color category of described color film comprises RGB three primary colors or CMY three primary colors.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010607808.8A CN102566040B (en) | 2010-12-27 | 2010-12-27 | Micro electro mechanical system (MEMS) display |
| PCT/CN2011/084431 WO2012089059A1 (en) | 2010-12-27 | 2011-12-22 | Mems display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010607808.8A CN102566040B (en) | 2010-12-27 | 2010-12-27 | Micro electro mechanical system (MEMS) display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102566040A CN102566040A (en) | 2012-07-11 |
| CN102566040B true CN102566040B (en) | 2014-01-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010607808.8A Active CN102566040B (en) | 2010-12-27 | 2010-12-27 | Micro electro mechanical system (MEMS) display |
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| Country | Link |
|---|---|
| CN (1) | CN102566040B (en) |
| WO (1) | WO2012089059A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0000647A1 (en) * | 1977-07-25 | 1979-02-07 | Western Electric Company, Incorporated | Optical crosspoint switch |
| CN1163000A (en) * | 1994-09-09 | 1997-10-22 | 狄肯研究公司 | Display panel with electrically-controlled waveguide-routing |
| CN1703645A (en) * | 2001-10-04 | 2005-11-30 | 迪康公司 | Switching device, in particular for optical applications |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6532093B2 (en) * | 2000-12-06 | 2003-03-11 | Xerox Corporation | Integrated micro-opto-electro-mechanical laser scanner |
| US20030048036A1 (en) * | 2001-08-31 | 2003-03-13 | Lemkin Mark Alan | MEMS comb-finger actuator |
| GB0412157D0 (en) * | 2004-05-29 | 2004-06-30 | Polatis Ltd | Flexible add drop multiplexer module |
| US7675665B2 (en) * | 2005-02-23 | 2010-03-09 | Pixtronix, Incorporated | Methods and apparatus for actuating displays |
-
2010
- 2010-12-27 CN CN201010607808.8A patent/CN102566040B/en active Active
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2011
- 2011-12-22 WO PCT/CN2011/084431 patent/WO2012089059A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0000647A1 (en) * | 1977-07-25 | 1979-02-07 | Western Electric Company, Incorporated | Optical crosspoint switch |
| CN1163000A (en) * | 1994-09-09 | 1997-10-22 | 狄肯研究公司 | Display panel with electrically-controlled waveguide-routing |
| CN1703645A (en) * | 2001-10-04 | 2005-11-30 | 迪康公司 | Switching device, in particular for optical applications |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2002-250886A 2002.09.06 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012089059A1 (en) | 2012-07-05 |
| CN102566040A (en) | 2012-07-11 |
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