CN102564584B - Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector - Google Patents
Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector Download PDFInfo
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Abstract
The invention discloses a modeling method for an equivalent circuit of a high-sensitivity quantum effect photodetector. The modeling method is characterized in that a quantum dot-quantum well photodetector is subjected to electrical characteristic tests under the conditions of different radiation powers and device biases, and an equivalent circuit model is established by using a 'VerilogA' language, and is verified by circuit simulation software, so that a photodetector model capable of accurately reflecting the characteristics of devices with different structures is provided for the design of a readout circuit. Compared with the prior art, the modeling method disclosed by the invention has the advantages that: the modeling method is simple in modeling procedure, flexible in modification and high in efficiency; settings of different corresponding optical power and device bias parameters can be conveniently modified; and the different optical powers and the different device biases can be realized by directly inputting specific data in corresponding preset optical power and device bias parameters in the attributes of the equivalent circuit model.
Description
Technical field
The present invention relates to electronics, circuit design technique field, especially a kind of modeling method of high sensitivity quantum effect photodetector equivalent electrical circuit.
Background technology
Photodetector is being taken on the role that the light signal that will receive is converted to electric signal.Along with the progress of quantum well, quantum dot physics and material technology, the quantum effect photodetector also arises at the historic moment in recent years.The quantum effect photodetector has that dark current is little, sensitivity is large, dynamic range is large, the photoelectric transformation efficiency advantages of higher under low-light irradiation, it is widely used in the fields such as medical treatment, biomolecule science, environmental monitoring.The major function of sensing circuit in Photodetection system is that the detector feeble signal is carried out pre-service, and process inter-stage at signal an interface is provided, in the design to sensing circuit, need an equivalent electrical circuit that can accurately reflect quantum effect photodetector characteristic.
At present, some typical photoelectric detectors have been set up some equivalent-circuit models, these models mostly are based on and obtain on the basis of photodetector internal physical equation.Since the physical characteristics parameter of photodetector device inside too much and the approximate expression that when finding the solution a large amount of physical characteristics equations, obtains based on multiple hypotheses all can affect to a great extent the precision of equivalent-circuit model, thereby bring difficulty for the design of its sensing circuit.And in the solution procedure, because the labyrinth of photodetector and the various material parameters of use thereof, also can be so that the program composition in the modeling process be complicated.
In the patent No.: proposed more simple and practical equivalent electrical circuit modeling method in ZL 200910047116.X " a kind of method for designing of photo-detector sensing circuit ", the method is to draw according to direct matches of electrical characteristics such as the I-V of device and C-V, the limitation of this modeling method is: I-V and the C-V characteristic that can not reflect photodetector under the different exposure light power, and photodetector I-V, the C-V characteristic can change with exposure light power.Therefore at present the modeling method of this equivalent electrical circuit to photodetector has certain limitation.
Summary of the invention
The equivalent electrical circuit modeling method that a kind of high sensitivity quantum effect photodetector of providing for the deficiencies in the prior art is provided, the photodetector characterisitic parameter under different irradiation powers and the device bias accurately realized in employing " VerilogA " language, but the equivalent electrical circuit with characterisitic parameter foundation and photodetector exact matching, modeling program is simple, efficient is high, the physical characteristics parameter that has greatly reduced photodetector inside too much affects the establishment of model accuracy and complicated process, corresponding different luminous powers and the setting of device bias parameter, revise and input very convenient, for sensing circuit design provides the photodetector that reflects accurately different components architectural characteristic model.
The object of the present invention is achieved like this: a kind of modeling method of high sensitivity quantum effect photodetector equivalent electrical circuit, be characterized in the quantum-dot-quantum-well photodetector is adopted different irradiation powers and the test of the electrical characteristics under the device bias, use " VerilogA " language and set up equivalent-circuit model, then utilize circuit simulation software to verify, for the design of sensing circuit provides the photodetector model of accurate reflection different structure device property, concrete modeling method comprises the following steps:
(1), the test of the characterisitic parameter of photodetector and match
A, based on the photoelectricity test platform, make I-E characteristic (I-V) characteristic family of photodetector, and adopt piecewise fitting to obtain I under the different exposure light power and the funtcional relationship between the V with " Origin " software:
, can realize with a controlled current source in equivalent electrical circuit that thus making output current is the function of voltage;
B, based on the photoelectricity test platform, make capacitance-voltage (C-V) characteristic family of photodetector, adopt piecewise fitting to obtain C under the different exposure light power and the funtcional relationship between the V with " Origin " software:
, and adopt " VerilogA " language that equivalent capacity is described, in equivalent electrical circuit, can realize that its capacitance size is the function of voltage with the variable capacitance of " VerilogA " language description current source form thus;
(2), the resistance in the equivalent electrical circuit is carried out " VerilogA " language description
Reference voltage with capacitive feedback transreactance amplifier (CTIA) type reading out structure
Value is the output voltage of equivalent-circuit model, obtains thus the output impedance of equivalent-circuit model
, adopt " VerilogA " language that equivalent output resistance is described, in equivalent electrical circuit, can realize with the output impedance of the current source form of " VerilogA " language description thus;
(3), the modeling of equivalent electrical circuit
The variable capacitance of the current source form of above-mentioned employing " VerilogA " language description is in parallel with the output impedance of current source form, formation can with the accurate equivalent-circuit model of coupling of photodetector.
(4), the analogue simulation of equivalent-circuit model
Equivalent-circuit model with above-mentioned foundation, utilize " Spectre " emulator of circuit simulation software " Cadence " that equivalent-circuit model is carried out analogue simulation, simulation result and I-V and the C-V characteristic family of actual test are compared, verify the correctness of equivalent-circuit model with this, for the design of sensing circuit provides accurately photodetector model.
The present invention compared with prior art has the following advantages:
1, the circuit modeling program is simple, efficient is high, and the physical characteristics parameter that has greatly reduced photodetector inside too much affects the establishment of model accuracy and complicated process;
2, equivalent electrical circuit can directly connect with sensing circuit, the sensing circuit that makes things convenient for the photodetector design to be complementary;
3, use " VerilogA " Language Modeling, it is very convenient that the arranging of corresponding different luminous power and device bias parameter revised, the realization of different luminous powers and device bias can get final product by directly inputting concrete data in the luminous power of establishing in advance corresponding in the equivalent-circuit model attribute and the device bias parameter, revises flexibly.
Description of drawings
Fig. 1 is the low-light I-V characteristic family figure of photodetector;
Fig. 2 is the low-light C-V characteristic family figure of photodetector;
Fig. 3 is " VerilogA " unit file page figure;
Fig. 4 is the resistance synoptic diagram of current source form;
Fig. 5 is the resistance attribute page figure of current source form;
Fig. 6 is the variable capacitance synoptic diagram in the equivalent electrical circuit;
The photodetector equivalent circuit diagram of Fig. 7 for simplifying;
Fig. 8 is the I-V characteristic Simulation oscillogram of equivalent-circuit model;
Fig. 9 is the C-V characteristic Simulation oscillogram of equivalent-circuit model.
Embodiment
The below is with the embodiment of the higher quantum effect photodetector equivalent circuit modeling under the luminous power irradiation below the 5nW of a kind of sensitivity, and the invention will be further described, and its concrete modeling procedure is as follows:
(1), the characterisitic parameter of photodetector test
Based on the photoelectricity test platform, adopting Kelthley 4200-SCS characteristic of semiconductor analyser and wavelength is the helium-neon laser of 633nm, test quantum dot-quantum well photoelectric detector is respectively I-V and the C-V electrical characteristic parameter of 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW at unglazed photograph (dark current) and exposure light power, and makes photodetector electrical characteristics curve family.
(2), the characteristic match of photodetector
Make I-V and the C-V characteristic family of photodetector according to test, in order to realize the highly sensitive characteristics of this photodetector, practical devices should be operated in the anti-partially situation, utilizes the match of " Origin " software to obtain I-V under the different exposure light power and the funtcional relationship between the C-V:
With
, wherein: V represents device bias, and P represents exposure light power, and characteristic match concrete steps are as follows:
A, the match of I-V characteristic family
For the I-V family curve that family curve after the match can be preferably obtained with test coincides, adopt the match of " Origin " software segments to obtain I under the different exposure light power and the funtcional relationship between the V:
, can realize with a controlled current source in equivalent electrical circuit that thus making output current is the function of voltage, will be divided into two sections between device bias-3V to 0 during the match of I-V characteristic family, be respectively [1.5,0] and [3 ,-1.5].
Work as device bias
The time, photodetector is respectively 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW at unglazed photograph (dark current) and exposure light power
Funtcional relationship represents as shown in the formula (1):
(1)
Work as device bias
The time, photodetector is respectively 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW at unglazed photograph (dark current) and exposure light power
Funtcional relationship represents as shown in the formula (2):
(2)
B, the match of C-V characteristic family
For the C-V family curve that family curve after the match can be preferably obtained with test coincides, adopt the match of " Origin " software segments to obtain C under the different exposure light power and the funtcional relationship between the V:
And with " VerilogA " language equivalent capacity is described, can in equivalent electrical circuit, can realize with the variable capacitance of " VerilogA " language description current source form thus, its capacitance size is the function of voltage, the C-V characteristic family fits within and adopts once fitting in device bias [3, the 0] scope.
Work as device bias
The time, photodetector is respectively 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW at unglazed photograph (dark current) and exposure light power
Funtcional relationship represents as shown in the formula (3):
(3)
(3), the resistance in the equivalent electrical circuit is carried out " VerilogA " language description
It is with the funtcional relationship between the I-V that the current source of photodetector equivalent electrical circuit is realized:
, the equivalent resistance of photodetector represents as shown in the formula (4):
Because capacitive feedback transreactance amplifier (CTIA) structure is adopted in reading of this photodetector, so that the output voltage of photodetector equivalent-circuit model size is the reference voltage of CTIA type sensing circuit
Value, and output current is
, the output impedance that can obtain thus equivalent-circuit model represents as shown in the formula (5):
Reference voltage with CTIA type reading out structure
Value is the output voltage of equivalent-circuit model, obtains thus the output impedance of equivalent-circuit model
, and adopt " VerilogA " language that equivalent output resistance is described, in equivalent electrical circuit, can realize with the output impedance of the current source form of " VerilogA " language description thus.
Consult accompanying drawing 3, create equivalent output resistance " VerilogA " file and " symbol " symbol of a current source form, the unit file " Cell " of newly-built " VerilogA " under " Cadence " software, and manufacture the equivalent output resistance symbol of a current source form.
Consult accompanying drawing 4, device bias and exposure light power are made as respectively " biasvoltage " and " photopower " two parameters, and in the attribute of the equivalent output resistance of current source form, arrange.Because the electric current of photodetector is subjected to the impact of device bias and exposure light power, and equivalent output resistance is relevant with output current, so the resistance of the current source form in the photodetector equivalent-circuit model should have the characteristics of a controlled current source, controlled by device bias and exposure light power.
As when device bias is 1nW for-2V and luminous power, as long as input " 2 " in " biasvoltage " option, input " 1 " gets final product in " photopower " option, adopts the equivalent resistance of the current source formula of " VerilogA " language description to be expressed as follows formula (6) expression:
（6）
Because the reference voltage of CTIA type sensing circuit
So=2.5V is the equivalent resistance of current source formula
Two ports of definition current source are " ns " and " ps " when " VerilogA " language description of the equivalent output resistance of current source form, and the bias voltage of setting device and the initial value of two parameters of luminous power " biasvoltage " and " photopower ", can in device attribute, make amendment during actual the use, because the I-V characteristic is piecewise fitting, the I-V curve that different luminous powers is corresponding different is so used respectively " if-else " and " case " statement to realize with " VeriolgA " language description the time.
(4), the variable capacitance in the equivalent electrical circuit is carried out " VerilogA " language description
Namely
, the capacitor C here itself is also with device bias and optical power change, so capacitor C must be placed on the bracket the inside, the pass of capacitor C and device bias and luminous power is:
When variable capacitance " VerilogA " language description of current source form, two ports that defined current source are " ns " and " ps ", and the bias voltage of setting device and the initial value of two parameters of luminous power " biasvoltage " and " photopower ", can in device attribute, make amendment during actual the use, because in device bias
C-V family curve in the scope is once fitting, and the C-V family curve that different luminous powers is corresponding different is so used " case " statement to realize with " VeriolgA " language description the time.
(5), the modeling of equivalent electrical circuit
Consult accompanying drawing 7, adopt " VerilogA " language that controlled current source and equivalent output resistance are described with a program, and generate " Symbol " symbol, make the equivalent-circuit model that obtains only comprise two parts, a part is the resistance of current source form, another part is a variable capacitance, and namely photodetector can equivalence be the resistance circuit model in parallel with variable capacitance of a current source form.
(6), equivalent-circuit model is carried out the analogue simulation checking
Consult accompanying drawing 8, equivalent-circuit model with the above-mentioned photodetector of building up, " Spectre " emulator that utilizes circuit simulation software " Cadence " respectively to equivalent-circuit model in device bias [3,0] carries out dc analysis and device bias " biasvoltage " in and two parameters of luminous power " photopower " are carried out parameter scanning, equivalent-circuit model to above-mentioned foundation carries out analogue simulation, and the equivalent-circuit model I-V characterization result that emulation is obtained compares checking with the actual I-V characteristic family of testing.
Consult accompanying drawing 9, equivalent-circuit model with the above-mentioned photodetector of building up, in device bias [3,0] in equivalent-circuit model is done transactional analysis and done device bias " biasvoltage " and two parameters of luminous power " photopower " are carried out parameter scanning, the equivalent-circuit model C-V characterization result that emulation is obtained compares checking with the actual C-V characteristic family of testing.
I-V and C-V simulation curve and the I-V of actual test and comparing of C-V curve family by above-mentioned equivalent-circuit model, can find out that both can coincide well, the checking simulation curve coincides with I-V and the C-V curve family of actual test, can verify thus the correctness of equivalent-circuit model, the photodetector model of accurate reflection different structure device property can be provided for the design of sensing circuit.
Just the present invention will be further described for above embodiment, is not to limit patent of the present invention, all for the present invention's equivalence enforcement, all should be contained within the claim scope of patent of the present invention.
Claims (1)
1. the modeling method of a high sensitivity quantum effect photodetector equivalent electrical circuit, it is characterized in that the quantum-dot-quantum-well photodetector is adopted different irradiation powers and the test of the electrical characteristics under the device bias, use " VerilogA " language and set up equivalent-circuit model, then utilize circuit simulation software to verify, for the design of sensing circuit provides the photodetector that reflects accurately different components architectural characteristic model, concrete grammar comprises the following steps:
(1), the test of the characterisitic parameter of photodetector and match
A, based on the photoelectricity test platform, make I-E characteristic (I-V) characteristic family of photodetector, and adopt piecewise fitting to obtain I under the different exposure light power and the funtcional relationship between the V with " Origin " software:
, can realize with a controlled current source in equivalent electrical circuit that thus making output current is the function of voltage;
B, based on the photoelectricity test platform, make capacitance-voltage (C-V) characteristic family of photodetector, adopt piecewise fitting to obtain C under the different exposure light power and the funtcional relationship between the V with " Origin " software:
, and adopt " VerilogA " language that equivalent capacity is described, in equivalent electrical circuit, can realize that its capacitance size is the function of voltage with the variable capacitance of " VerilogA " language description current source form thus;
(2), the resistance in the equivalent electrical circuit is carried out " VerilogA " language description
Reference voltage with capacitive feedback transreactance amplifier (CTIA) type reading out structure
Value is the output voltage of equivalent-circuit model, obtains thus the output impedance of equivalent-circuit model
, and adopt " VerilogA " language that equivalent output resistance is described, in equivalent electrical circuit, can realize with the output impedance of the current source form of " VerilogA " language description thus;
(3), the modeling of equivalent electrical circuit
The variable capacitance of the current source form of above-mentioned employing " VerilogA " language description is in parallel with the output impedance of current source form, formation can with the accurate equivalent-circuit model of coupling of photodetector;
(4), the analogue simulation of equivalent-circuit model
Equivalent-circuit model with above-mentioned foundation, utilize " Spectre " emulator of circuit simulation software " Cadence " that equivalent-circuit model is carried out analogue simulation, simulation result and I-V and the C-V characteristic family of actual test are compared, verify the correctness of equivalent-circuit model with this, for the design of sensing circuit provides accurately photodetector model.
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| CN102832176B (en) * | 2012-08-29 | 2014-07-30 | 华东师范大学 | Packaging method of quantum effect photoelectric detector and readout integrated circuit |
| CN104598680B (en) * | 2015-01-14 | 2017-07-04 | 华东师范大学 | The method of the modeling and simulation of the quantum photoelectric detector equivalent circuit based on neural network algorithm |
| CN106503285B (en) * | 2016-09-14 | 2019-04-30 | 西安电子科技大学 | A kind of circuit irradiation effect modeling method based on VHDL-AMS |
| CN112484867B (en) * | 2020-10-09 | 2022-07-01 | 天津大学 | Method for improving detection efficiency of single photon detection front-end circuit |
| CN115146782A (en) * | 2021-03-31 | 2022-10-04 | 合肥本源量子计算科技有限责任公司 | Quantum line compiling method, device, compiling framework and quantum operating system |
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| CN101504313A (en) * | 2009-03-06 | 2009-08-12 | 华东师范大学 | Design method for photoelectric detector reading circuit |
| CN101540197A (en) * | 2009-04-22 | 2009-09-23 | 华东师范大学 | Design method of emptying CTIA reading circuit of photo memory unit |
| CN102081680A (en) * | 2009-11-30 | 2011-06-01 | 上海华虹Nec电子有限公司 | Method for modeling P-channel metal oxide semiconductor (PMOS) one-time programmable memory (OTP) device |
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| CN101540197A (en) * | 2009-04-22 | 2009-09-23 | 华东师范大学 | Design method of emptying CTIA reading circuit of photo memory unit |
| CN102081680A (en) * | 2009-11-30 | 2011-06-01 | 上海华虹Nec电子有限公司 | Method for modeling P-channel metal oxide semiconductor (PMOS) one-time programmable memory (OTP) device |
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