CN102560684A - Method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip - Google Patents
Method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip Download PDFInfo
- Publication number
- CN102560684A CN102560684A CN2012100113551A CN201210011355A CN102560684A CN 102560684 A CN102560684 A CN 102560684A CN 2012100113551 A CN2012100113551 A CN 2012100113551A CN 201210011355 A CN201210011355 A CN 201210011355A CN 102560684 A CN102560684 A CN 102560684A
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- Prior art keywords
- czochralski silicon
- silicon chip
- heavily boron
- doped czochralski
- heavily
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
The invention discloses a method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip, which includes at the atmosphere of argon with purity greater than 99.99%, subjecting the heavily boron doped czochralski silicon chip to the temperature of 1000 DEG C to 1100 DEG C for two hours, then performing natural cooling, wherein the doping concentration of boron of the heavily boron doped czochralski silicon chip is from 7x1019 to 1.1x1020cm-3. The method for reducing dislocation of heavily boron doped czochralski silicon chip is simple in process and convenient to operate, capable of rapidly and effectively reducing or even eliminating the dislocation of heavily boron doped czochralski silicon chip, thereby the quality of the heavily boron doped czochralski silicon chip is effectively improved. The method is particularly suitable for the heavily boron doped czochralski silicon chip with the doping concentration of boron from 7x1019 to 1.1x1020cm-3.
Description
Technical field
The present invention relates to the silicon materials technical field, relate in particular to a kind of method that reduces primary dislocation in the heavily boron-doped Czochralski silicon wafer.
Background technology
The epitaxial wafer that is substrate with heavily doped borosilicate sheet (is P/P
+Epitaxial structure) memory hold-time of dynamic storage RAM can be significantly improved, the latch-up (Latch-up effect) in the CMOS unicircuit can be solved simultaneously.Therefore, heavily boron-doped Czochralski silicon wafer is widely used as the substrate material of VLSI (ULSI) with epitaxial wafer.
Heavily doped boron can produce material impact to the performance of Czochralski silicon wafer.M.Akatsuka; People's such as K.Sueoka research shows, heavily doped boron is the dislocation in the pinning vertical pulling silicon effectively, improves physical strength (the M.Akatsuka and K.Sueoka of silicon chip; Pinning effect of punched-out dislocations in Carbon-; Nitrogen-or boron-doped silicon wafers, Jpn.J.Appl.Phys., 40 (2001) 1240-1241.); In addition, people such as Yu Xuegong research shows that boron (B) can form B with the O in the silicon
2O
3Complex body can promote the formation of oxygen precipitation, strengthen the Internal Gettering of Silicon Wafers ability (Yu Xuegong, Yang Deren, horse on the sunny side, Yang Jiansong, Que Duanlin, adulterating vertical pulling silicon be to the intrinsic gettering ability of heavy metal Cr, semi-conductor journal, 6 (2003) 598-601.).
Because the atomic radius of boron is less than the atomic radius of silicon, a large amount of boron-dopings can cause the distortion that silicon crystal lattice is bigger, seriously even can cause silicon crystal in process of growth, to form primary dislocation.Facts have proved that the doping content of boron is greater than 7 * 10 in pulling of silicon single crystal
19Cm
-3The time, in silicon crystal, can produce a large amount of primary dislocations.The appearance of primary dislocation influences the silicon chip physical strength, has a strong impact on the silicon chip quality, and the silicon chip of high dislocation density can not be used for the manufacturing of device.Therefore, the primary dislocation of seeking in a kind of effective means minimizing and even the elimination heavily boron-doped Czochralski silicon wafer has important and practical meanings undoubtedly.
Summary of the invention
The invention provides a kind of method that reduces primary dislocation in the heavily boron-doped Czochralski silicon wafer, this method can reduce even eliminate the primary dislocation that produces in the heavily boron-doped Czochralski silicon pulling process quickly and efficiently.
A kind of method that reduces primary dislocation in the heavily boron-doped Czochralski silicon wafer comprises: purity greater than 99.99% argon gas atmosphere under, place 1000 ℃-1100 ℃ to keep 1-2 hour heavily boron-doped Czochralski silicon wafer, then naturally cooling.
The boron doping concentration of said heavily boron-doped Czochralski silicon wafer is 7 * 10
19-1.1 * 10
20Cm
-3
Said heavily boron-doped Czochralski silicon wafer can be < 100>or < 111>crystal orientation.
The time that said heavily boron-doped Czochralski silicon wafer is kept under 1000 ℃-1100 ℃ is preferably 1-1.5 hour; More preferably 1 hour, help the elimination of primary dislocation most.
The present invention has carried out simple pyroprocessing to heavily boron-doped Czochralski silicon wafer, and technology is simple, and is easy to operate; Through control treatment temp and treatment time, can reduce even eliminate the primary dislocation in the heavily boron-doped Czochralski silicon wafer quickly and efficiently, effectively improved the quality of heavily boron-doped Czochralski silicon wafer; Being specially adapted to boron doping concentration is 7 * 10
19-1.1 * 10
20Cm
-3Heavily boron-doped Czochralski silicon wafer.
Description of drawings
Fig. 1 is the optical microscope photograph that primary dislocation distributes on the heavily boron-doped Czochralski silicon wafer in the embodiment of the invention 1; Wherein, (a) figure is the photo before handling; (b) figure is the photo after thermal treatment in 1100 ℃, 1 hour.
Fig. 2 is the optical microscope photograph that primary dislocation distributes on the heavily boron-doped Czochralski silicon wafer in the embodiment of the invention 2; Wherein, (a) figure is the photo before handling; (b) figure is the photo after thermal treatment in 1000 ℃, 1 hour.
Embodiment
Specify the present invention below in conjunction with embodiment and accompanying drawing, but the present invention is not limited to this.
Embodiment 1
The heavily boron-doped Czochralski silicon wafer that present embodiment adopts does<100>The crystal orientation, diameter 100mm, the doping content of B is about 7 * 10
19Cm
-3, the thick about 2mm of sheet.This silicon chip contains primary dislocation, through Secco corrosive fluid (4.4g K
2Cr
2O
7: 100ml H
2O: 200ml HF) optical microscope photograph of corrosion after 7 minutes is shown in Fig. 1 (a).
Above-mentioned silicon chip is placed heat treatment furnace, under the Ar atmosphere protection, be incubated 1 hour in 1100 ℃; Subsequently silicon chip is moved to outside the stove, naturally cool to room temperature.The optical microscope photograph of this heat treated silicon chip after the Secco corrosive fluid corrodes 7 minutes is shown in Fig. 1 (b).
Comparison diagram 1 (a) and Fig. 1 (b) can know that after 1100 ℃ of thermal treatments of 1 hour, the primary dislocation in the heavily boron-doped Czochralski silicon wafer significantly reduces.
Embodiment 2
The heavily boron-doped Czochralski silicon wafer that present embodiment adopts does<111>The crystal orientation, diameter 200mm, the doping content of B is about 1.1 * 10
20Cm
-3, the thick about 2mm of sheet.This silicon chip contains primary dislocation, through Secco corrosive fluid (4.4g K
2Cr
2O
7: 100ml H
2O: 200ml HF) optical microscope photograph of corrosion after 7 minutes is shown in Fig. 2 (a).
Above-mentioned silicon chip is placed heat treatment furnace, under the Ar atmosphere protection, be incubated 1 hour in 1000 ℃; Subsequently silicon chip is moved to outside the stove, naturally cool to room temperature.The optical microscope photograph of this heat treated silicon chip after the Secco corrosive fluid corrodes 7 minutes is shown in Fig. 2 (b).
Comparison diagram 2 (a) and Fig. 2 (b) can know that after 1000 ℃ of thermal treatments of 1 hour, the primary dislocation in the heavily boron-doped Czochralski silicon wafer almost all disappears.
Claims (4)
1. method that reduces primary dislocation in the heavily boron-doped Czochralski silicon wafer comprises: purity greater than 99.99% argon gas atmosphere under, place 1000 ℃-1100 ℃ to keep 1-2 hour heavily boron-doped Czochralski silicon wafer, then naturally cooling.
2. method according to claim 1 is characterized in that, the boron doping concentration of said heavily boron-doped Czochralski silicon wafer is 7 * 10
19-1.1 * 10
20Cm
-3
3. method according to claim 1 is characterized in that, said heavily boron-doped Czochralski silicon wafer is < 100>or < 111>crystal orientation.
4. method according to claim 1 is characterized in that, the time that said heavily boron-doped Czochralski silicon wafer is kept under 1000 ℃-1100 ℃ is 1-1.5 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210011355.1A CN102560684B (en) | 2012-01-13 | 2012-01-13 | Method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210011355.1A CN102560684B (en) | 2012-01-13 | 2012-01-13 | Method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip |
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| Publication Number | Publication Date |
|---|---|
| CN102560684A true CN102560684A (en) | 2012-07-11 |
| CN102560684B CN102560684B (en) | 2015-03-25 |
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|---|---|---|---|
| CN201210011355.1A Expired - Fee Related CN102560684B (en) | 2012-01-13 | 2012-01-13 | Method for reducing as-grown dislocation of heavily boron doped czochralski silicon chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114481297A (en) * | 2021-12-31 | 2022-05-13 | 杭州中欣晶圆半导体股份有限公司 | Method for eliminating heavily boron-doped small-angle grain boundary |
-
2012
- 2012-01-13 CN CN201210011355.1A patent/CN102560684B/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| WU HONG-JUN 等: "Effect of thermal annealing on defects of upgraded metallurgical grade silicon", 《TRANS. NONFERROUS MET. SOC. CHINA》 * |
| 杨戈: "化合物半导体Cd(1-x)ZnxTe中的In掺杂及其与Au的接触特性", 《中国博士学位论文全文数据库（信息科技辑）》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114481297A (en) * | 2021-12-31 | 2022-05-13 | 杭州中欣晶圆半导体股份有限公司 | Method for eliminating heavily boron-doped small-angle grain boundary |
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| Publication number | Publication date |
|---|---|
| CN102560684B (en) | 2015-03-25 |
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