CN102560394A - 镀膜件及其制造方法 - Google Patents

镀膜件及其制造方法 Download PDF

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CN102560394A
CN102560394A CN201010607434XA CN201010607434A CN102560394A CN 102560394 A CN102560394 A CN 102560394A CN 201010607434X A CN201010607434X A CN 201010607434XA CN 201010607434 A CN201010607434 A CN 201010607434A CN 102560394 A CN102560394 A CN 102560394A
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prime coat
plated film
gradient
matrix
nitrogen
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张新倍
陈文荣
蒋焕梧
陈正士
李聪
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to US13/215,669 priority patent/US8372523B2/en
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Abstract

本发明提供一种镀膜件，该镀膜件包括基体及形成于基体表面的打底层，该镀膜件还包括形成于打底层表面的梯度膜层，该打底层为镍铬合金层，该梯度膜层为镍铬硼氮层。本发明镀膜件的膜系逐层过渡较好，膜层之间的结合力较好且膜层内部没有明显的应力产生，这样在施加外力的情况下，所镀的膜层不会因为内部的应力缺陷导致失效，有效地提高了镀膜件的硬度及耐磨性，从而提高镀膜件的使用寿命。此外，本发明还提供一种上述镀膜件的制造方法。

Description

镀膜件及其制造方法
技术领域
本发明涉及一种镀膜件及其制造方法。
背景技术
过渡金属氮化物、碳化物和碳氮化物具有高硬度、高抗磨损性能和良好的化学稳定性等优异性能。因此，通常将过渡金属氮化物、碳化物和碳氮化物以薄膜的形式镀覆于3C电子产品的壳体、眼睛框及建筑件等产品表面，以此来提高产品的使用寿命。
但是此类镀膜件的制造过程中，由于硬质膜层与基体间的热膨胀系数相差较大，且不同组分的膜层的成份和结构有明显的变化，膜层间存在不可避免的热应力，晶格匹配带来的内应力，这些应力在薄膜制造完成后往往不能消除，因而膜层与基体结合力较差，薄膜在使用过程中容易发生剥离，从而影响了此类镀膜件的使用寿命及其应用范围。
发明内容
有鉴于此，有必要提供一种有效解决上述问题的镀膜件。
另外，还有必要提供一种制造上述镀膜件的方法。
一种镀膜件，其包括基体及形成于基体表面的打底层，该镀膜件还包括形成于打底层表面的梯度膜层，该打底层为镍铬合金层，该梯度膜层为镍铬硼氮层。
一种镀膜件的制造方法，其包括如下步骤：
提供基体；
采用镍铬合金靶为靶材，在基体表面形成打底层，该打底层为镍铬合金层；
以氮气为反应气体，采用镍铬合金靶及硼靶为靶材，在打底层的表面进行共溅射形成梯度膜层，该梯度膜层为镍铬硼氮层。
本发明镀膜件在基体的表面沉积镍铬合金层作为打底层，再在打底层的表面沉积镍铬硼氮层作为梯度膜层，膜系逐层过渡较好，膜层之间的结合力较好且膜层内部没有明显的应力产生，这样在施加外力的情况下，所镀的膜层不会因为结合力不佳和/或内部的应力缺陷导致失效，有效地提高了镀膜件的硬度及耐磨性，从而提高镀膜件的使用寿命。
附图说明
图1为本发明实施例镀膜件的剖视图；
图2为制造图1中镀膜件所用真空镀膜机的示意图。
主要元件符号说明
镀膜件        10
基体          11
打底层        13
梯度膜层      15
镀膜机        100
镀膜室        20
真空泵        30
轨迹          21
第一靶材      22
第二靶材      23
气源通道      24
具体实施方式
请参阅图1，本发明一较佳实施例的镀膜件10包括基体11、形成于基体11表面的打底层13及形成于打底层13表面的梯度膜层15。
该镀膜件10为3C电子产品的壳体、眼睛框及建筑件等。
该基体11为含有Ni、Cr中至少一种元素的不锈钢。
该打底层13可以磁控溅射的方式形成。该打底层13为镍铬(NiCr)合金层。该打底层13的厚度可为100～300nm。
该梯度膜层15可以磁控溅射的方式形成。该梯度膜层15为镍铬硼氮(NiCrBN)层。所述梯度膜层15中氮元素的的质量百分含量由靠近打底层13至远离打底层13的方向呈梯度增加。该梯度膜层15的厚度可为1～4μm。
所述梯度膜层15中镍元素的质量百分含量为20％～30％，铬元素的质量百分含量为30％～45％，硼元素的质量百分含量为5％～10％，氮元素的质量百分含量为20％～40％。
本发明较佳实施例的镀膜件10的制造方法，其包括以下步骤：
提供基体11，将基体11放入盛装有无水乙醇或丙酮溶液的超声波清洗器中进行震动清洗，以除去基体11表面的杂质和油污。清洗完毕后烘干备用。
请参阅图2，提供一真空镀膜机100，将所述基体11置于该真空镀膜机100的镀膜室20内进行氩气等离子体体清洗，以进一步去除基体11表面的油污，以及改善基体11表面与后续涂层的结合力。
该镀膜机100包括一镀膜室20及与镀膜室20相连接的一真空泵30，真空泵30用以对镀膜室20抽真空。该镀膜室20内设有转架(未图示)、二第一靶材22及二第二靶材23。转架带动基体11沿圆形轨迹21运行，且基体11在沿轨迹21运行时亦自转。二第一靶材22与二第二靶材23关于轨迹21的中心对称设置，且二第一靶材22相对地设置在轨迹21的内外侧，二第二靶材23相对地设置在轨迹21的内外侧。每一第一靶材22及每一第二靶材23的两端均设有气源通道24，气体经该气源通道24进入所述镀膜室20中。当基体11穿过二第一靶材22之间时，将镀上第一靶材22表面溅射出的粒子，当基体11穿过二第二靶材23之间时，将镀上第二靶材23表面溅射出的粒子。本实例中，所述第一靶材22为镍铬合金靶，所述第二靶材23为硼靶。
该等离子体体清洗的具体操作及工艺参数为：如图2所示，基体11安装于镀膜室20内，真空泵30对所述镀膜室20进行抽真空处理至真空度为3.0×10-3Pa，然后以400～600sccm(标准状态毫升/分钟)的流量向镀膜室20内通入纯度为99.999％的氩气，并施加-500～-800V的偏压于基体11，对基体11表面进行等离子体体清洗，清洗时间为3～10min。
在对基体11进行等离子体体清洗后，在所述镀膜机100中采用磁控溅射镀膜法于基体11表面沉积所述打底层13。该打底层13为NiCr合金层。形成所述打底层13的具体操作及工艺参数如下：以氩气为工作气体，调节氩气的流量为200～400sccm，加热镀膜室20至100～200℃(即镀膜温度为100～200℃)，开启安装于所述镀膜室20内的第一靶材22的电源，设置该第一靶材22的电源功率为8～10kw，对基体11施加-100～-300V的偏压，沉积所述打底层13。沉积该打底层13的时间为20～60min。其中，所述第一靶材22中Ni的的质量百分含量为20～80％。
于所述打底层13上沉积所述梯度膜层15。该梯度膜层15为镍铬硼氮层。所述梯度膜层15中氮元素的质量百分含量由靠近打底层13至远离打底层13的方向呈梯度增加。形成所述梯度膜层15的具体操作及工艺参数如下：以氩气为工作气体，调节氩气流量至300～500sccm，以氮气为反应气体，设置氮气的初始流量为10～20sccm；开启安装于所述镀膜室20内的第二靶材23，设置第二靶材23的电源功率为3～10kw，保持所述第一靶材22的电源功率、镀膜温度及对基体11施加的偏压不变，如此使第一靶材22及第二靶材23共溅射沉积梯度膜层15。在沉积梯度膜层15的过程中，每沉积1～5min将氮气的流量增大5～15sccm，当氮气的流量到达50～150sccm时，停止增大氮气流量。沉积该梯度膜层15的时间为30～120min。
形成所述梯度膜层15时，镍铬合金、硼元素可分别与氮气反应形成NiCrN相及BN相，所述BN相具有较高的硬度可增强所述梯度膜层15的硬度；此外，在外力作用下，所述BN相还可阻碍位错的滑移，避免膜层内的晶体发生变形，从而增强被覆件10的耐磨性。
关闭负偏压及第一靶材22的电源，停止通入氩气及氮气，待所述梯度膜层15冷却后，向镀膜内通入空气，打开镀膜室20的门，取出镀覆有打底层13及梯度膜层15的基体11。
下面通过实施例来对本发明进行具体说明。
实施例1
(1)镀膜前处理
采用丙酮对基体11进行超声波清洗大约45min。
将清洗好的基体11放入磁控溅射镀膜机100的转架上。对基体11的表面采用氩气等离子体清洗。抽真空使所述镀膜室20的本底真空度为3.0×10-3Pa，氩气流量为500sscm，施加基体的偏压为-500V，该等离子体清洗时间为5min。本实施例所使用的磁控溅射镀膜机100为台湾富临公司生产，型号为FSE-BSS-400。
(2)磁控溅射打底层13
调节工作气体氩气的流量为400sccm，加热镀膜室20至100℃(即镀膜温度为100℃)，设置第一靶材22的电源功率为3kw，施加基体11的偏压为-120V，沉积该打底层13的时间为35min。其中，所述第一靶材22中Ni的的质量百分含量为50％。
(3)磁控溅射梯度膜层15
调节工作气体氩气流量为400sccm，设置反应气体氮气的初始流量为20sccm，设置第二靶材23的电源功率为3kw，保持所述第一靶材22的电源功率、镀膜温度及对基体11施加的偏压不变，沉积梯度膜层15。在沉积梯度膜层15的过程中，每沉积5min将氮气的流量增大10sccm，当氮气的流量到达120sccm时，停止增大氮气流量。沉积该梯度膜层15的时间为40min。
实施例2
(1)镀膜前处理
采用丙酮对基体11进行超声波清洗大约45min。
将清洗好的基体11放入磁控溅射镀膜机100的镀膜室20内的转架上。对基体11的表面采用氩气等离子体清洗。抽真空使所述镀膜室20的本底真空度为3.0×10-3Pa，氩气流量为500sscm，施加基体的偏压为-550V，该等离子体清洗时间为10min。本实施例所使用的磁控溅射镀膜机100为台湾富临公司生产，型号为FSE-BSS-400。
(2)磁控溅射打底层13
调节工作气体氩气的流量为350sccm，加热镀膜室20至150℃(即镀膜温度为150℃)，设置第一靶材22的电源功率为3kw，施加基体11的偏压为-120V，沉积该打底层13的时间为30min。
(3)磁控溅射梯度膜层15
调节工作气体氩气流量至380sccm，设置反应气体氮气的初始流量为10sccm，设置第二靶材23的电源功率为3kw，保持所述第一靶材22的电源功率、镀膜温度及对基体11施加的偏压不变，沉积梯度膜层15。在沉积梯度膜层15的过程中，每沉积5min将氮气的流量增大10sccm，当氮气的流量到达110sccm时，停止增大氮气流量。沉积该梯度膜层15的时间为35min。
性能测试
将上述制得的被覆件10进行硬度和耐磨性测试，具体测试方法如下：
1.硬度测试
采用HM-113型维氏硬度计，在载荷为0.05kg力的作用下，测试被覆件10的维氏硬度。
结果表明，由本发明实施例1和2所制造的被覆件10的维氏硬度分别为582HV和603HV。可见，该被覆件10具有较高的硬度。
2.耐磨性测试
采用5700型线性耐磨性测试仪，在载荷为1kg力的作用下，以1英寸的滑行长度、25循环/分钟的循环速度摩擦被覆件10的表面。
结果表明，由本发明实施例1和2的方法所制造的被覆件10在10个循环后均没有露出基材。可见，该被覆件10具有较好的耐磨性。
本发明较佳实施方式镀膜件10在基体11的表面沉积镍铬合金层作为打底层13，再在打底层13的表面沉积NiCrBN层作为梯度膜层15，膜系逐层过渡较好，膜层之间的结合力较好且膜层内部没有明显的应力产生，这样在施加外力的情况下，所镀的膜层不会因为结合力不佳和/或内部的应力缺陷导致失效，有效地提高了镀膜件10的硬度及耐磨性，从而提高镀膜件10的使用寿命。

Claims (10)

1.一种镀膜件，其包括基体及形成于基体表面的打底层，其特征在于：该镀膜件还包括形成于打底层表面的梯度膜层，该打底层为镍铬合金层，该梯度膜层为镍铬硼氮层。
2.如权利要求1所述的镀膜件，其特征在于：所述梯度膜层中氮元素的质量百分含量由靠近打底层至远离打底层的方向呈梯度增加。
3.如权利要求1所述的镀膜件，其特征在于：所述梯度膜层中镍元素的质量百分含量为20％～30％，铬元素的质量百分含量为30％～45％，硼元素的质量百分含量为5％～10％，氮元素的质量百分含量为20％～40％。
4.如权利要求1所述的镀膜件，其特征在于：所述打底层及梯度膜层分别通过磁控溅射镀膜法形成。
5.如权利要求1所述的镀膜件，其特征在于：所述打底层的厚度为100～300nm，所述梯度膜层的厚度为1～4μm。
6.如权利要求1所述的镀膜件，其特征在于：所述基体为含有Ni、Cr中至少一种元素的不锈钢。
7.一种镀膜件的制造方法，其包括如下步骤：
提供基体；
采用镍铬合金靶为靶材，在基体表面形成打底层，该打底层为镍铬合金层；
以氮气为反应气体，采用镍铬合金靶及硼靶为靶材，在打底层的表面进行共溅射形成梯度膜层，该梯度膜层为镍铬硼氮层。
8.如权利要求7所述的镀膜件的制造方法，其特征在于：所述形成打底层的步骤采用如下方式实现：采用磁控溅射法，设置镍铬合金靶的电源功率为8～10kw，以氩气为工作气体，氩气流量为200～400sccm，施加于基体的偏压为-100～-300V，镀膜温度为100～200℃，镀膜时间为20～60min。
9.如权利要求7所述的镀膜件的制造方法，其特征在于：所述形成梯度膜层的步骤采用如下方式实现：采用磁控溅射法，设置镍铬合金靶的电源功率为8～10kw、硼靶的电源功率为3～10kw；以氩气为工作气体，氩气流量为300～500sccm，以氮气为反应气体，设置氮气的初始流量为10～20sccm，在沉积梯度膜层的过程中，每沉积1～5min将乙炔的流量增大5～15sccm，当氮气的流量到达150sccm时，停止增大氮气流量；施加于基体的偏压为-100～-300V，镀膜温度为100～200℃，镀膜时间为30～120min。
10.如权利要求8或9所述的镀膜件的制造方法，其特征在于：所述镍铬合金靶中Ni的的质量百分含量为20～80％。
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