CN102556931A - Microelectrode array with electrode point distance capable of exceeding micromaching precision and preparation method of microelectrode array - Google Patents
Microelectrode array with electrode point distance capable of exceeding micromaching precision and preparation method of microelectrode array Download PDFInfo
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- CN102556931A CN102556931A CN2011104283824A CN201110428382A CN102556931A CN 102556931 A CN102556931 A CN 102556931A CN 2011104283824 A CN2011104283824 A CN 2011104283824A CN 201110428382 A CN201110428382 A CN 201110428382A CN 102556931 A CN102556931 A CN 102556931A
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Abstract
The invention discloses a microelectrode array with an electrode point distance capable of exceeding micromaching precision and a preparation method of the microelectrode array; the microelectrode array comprises a microelectrode array structural layer, an electrode circuit layer and a microelectrode array covering layer, wherein at least two rows of electrode points which are arranged closely and reach a micromaching precision distance are arranged in the electrode circuit layer, the at least two rows of electrode points are cut into two modules capable of sliding relatively, namely a first microelectrode array module and a second microelectrode array module, the two modules slide relatively to form a shorter electrode point distance. In the invention, a distance among the electrode points for addressing specifically can be changed into 0.866 than the original distance to a minimum extent during relatively sliding of the two modules, so that higher resolution factor is achieved, and furthermore, better electrophysiological acquisition and stimulation effects are achieved. Moreover, the electrode point distance can be properly increased through a proper sliding distance, so that the microelectrode array can be utilized repeatedly, and the electrophysiological acquisition and stimulation can be performed in other electrode point distances.
Description
Technical field
What the present invention relates to is a kind of microelectrode array of medical equipment technical field, specifically is that a kind of electrode points spacing of using towards electric physiology can surpass microelectrode array of little machining accuracy and preparation method thereof.
Background technology
In recent years; Along with MEMS (MEMS:Micro-Electro-Mechanical Systems) continuous advancement in technology; Make micro-system ranges of application such as microelectronic device and microsensor constantly enlarge, be widely used in a plurality of fields, particularly medical domain.
Microelectrode array is to utilize the typical application of micro electro mechanical system (MEMS) technology at biomedical aspect.Microelectrode array is the electrode of arranging in the substrate surface lattice-like; Common electrode points diameter minimum is 50 μ m; Electrode points spacing minimum is 100 μ m, and in vitro tissue, cell or section directly closely place on the microelectrode array, extracellular field potential signal that can a plurality of sites of synchronous recording.Microelectrode array both can write down also to can be used as to stimulate or ground connection, is applicable to the electrophysiological characteristics and the ion channel biological characteristic research of excitable cells such as neural and myocyte.
Traditional microelectrode array comprises the sputter, graphical of precious metal material, the deposition of electric barrier material, opening of electrode points or the like.But the electrode points spacing of the microelectrode of this method preparation is fixed, and the scope and the precision that change microelectrode recording if desired or stimulate then need preparation again.And the spacing that some situation need be adjusted electrode points obtains more excellent record or effect of stimulation, this also be the conventional fixed spaced electrodes can not.Moreover; The machining accuracy that is limited to present micro fabrication, the limit of electrode points spacing can only be more than or equal to machining accuracy, if still utilize the electrod-array of variable spacing; Just can construct the electrode points spacing above machining accuracy, this then exceeds conventional fixed spaced electrodes ability.
Retrieval through to prior art is found; Merriam; S.M.E.; People such as O.Srivannavit are at Journal of Microelectromechanical Systems 20 (3): 594-600, and 2011 write articles " AThree-Dimensional 64-Site Folded Electrode Array Using Planar Fabrication " (plane preparations of a kind of three-dimensional 64 collapsible electrod-arrays), and this technology adopts traditional handicrafts such as sputter, etching to realize two plane electrodes with probe; Four electrode points are wherein arranged on each probe, and these two plane electrodes can fold and then form stereo electrod.This is a kind of quite complicated electrode structure, but the relative position of four electrode points on its each probe but fix, can not adapt to the actual conditions that electrode points changes apart from needs.So in actual use, the kind electrode flexibility is not enough, should use and receive more restriction.
One Chinese patent application number is 201110110285.0; Publication number is CN 102178998A; The three-decker that discloses microelectrode array in this patent is microelectrode array structure sheaf, telegraph circuit layer, microelectrode array cover layer, and wherein: the telegraph circuit layer is clipped in the middle by microelectrode array structure sheaf and microelectrode array cover layer.But the electrode points spacing that does not also have to disclose this microelectrode array also is adjustable.
U.S. Patent number: US7; 501; 301; " Low cost fabrication of microelectrode arrays for cell-based biosensors and drug discovery methods " (is the low-cost microelectrode array preparation of the biology sensor and the drug discovery method on basis with the cell), this technology discloses a kind of printed circuit board (PCB) (PCB) manufacturing process and material of utilizing non-modified of relating to and has come the low-cost method for preparing microelectrode array.This microelectrode array coats patterned conducting wire by thin polymer film and constitutes, and can plurality of applications be arranged at biology sensor and drug discovery field.But the electrode points spacing of this microelectrode array is fixed.For example can not be through changing some performance that the electrode points spacing changes biology sensor.
U.S. Patent number: US6; 896; 780, " Microelectrode, microelectrode array and method for manufacturing the microelectrode " (preparation method of microelectrode and microelectrode array); This technology discloses a kind of method that relates to microelectrode and microelectrode array preparation, and the temperature of this microelectrode is controlled.This microelectrode is isolated by forming heat in the annular seal space on the silicon substrate, and a micro-heater is arranged in the annular seal space, and electrode can be by the indirect heating of micro-heater.But the electrode points spacing of this microelectrode array is also fixed.
To sum up; Though the preparation method of microelectrode array has obtained more detailed research; And the relevant extension function of microelectrode array has also obtained paid certain attention, but the electrode points spacing of not appearing in the newspapers in the document is adjustable, even can surpass the microelectrode array of little machining accuracy.
Summary of the invention
The present invention is directed to the above-mentioned deficiency that prior art exists, provide a kind of electrode points spacing of using towards electric physiology can surpass microelectrode array of little machining accuracy and preparation method thereof, easy and simple to handle, microelectrode array is reasonably reused.And can construct the microelectrode array of the electrode points spacing that surpasses little machining accuracy, obtain higher resolution ratio, further obtain more excellent record or effect of stimulation.
The present invention realizes through following technical scheme:
Electrode points spacing of the present invention can surpass the microelectrode array of little machining accuracy; Comprise: the microelectrode array structure sheaf, telegraph circuit layer and the microelectrode array cover layer that set gradually and form composite construction; The microelectrode array cover layer directly contacts with tissue to be measured; Be provided with at least two row in the telegraph circuit layer and closely arrange and reach the electrode points of little machining accuracy spacing; Said electrode points is divided into two modules that can slide relatively, and promptly the first microelectrode array module and the second microelectrode array module form littler electrode points spacing when these two parts slide relatively.
Described microelectrode array cover layer is covered in and removes electrode points on the microelectrode array structure sheaf with external position.
The described first microelectrode array module and the second microelectrode array module are attached on the hard substrate.
The radius of described microelectrode array electrode points is the full accuracy in the little process of this microelectrode array, the circle that the diameter that promptly refers to can to obtain in the photoetching process is minimum, and scope is 0.01 μ m-100 μ m.
The center of the electrode points on described two microelectrode array modules constitutes the summit of equilateral triangle.
Distance between the described adjacent electrode dot center, scope is 0.04 μ m-400 μ m.
Minimum range between the described electrode points is become 0.866 times of this distance by the distance between the adjacent electrode dot center before sliding.
In the described telegraph circuit layer, only electrode points directly contacts and participates in electric physiology collection, stimulation with tissue to be measured.
The described electrode points that reaches little machining accuracy spacing is meant that the spacing of electrode points in the telegraph circuit layer has reached the limit of certain little machining accuracy (for example 10 μ m).
The present invention utilizes the cooperation each other of these electrode points to obtain the electrode points spacing above the limit of this little machining accuracy; Be specially and be divided into two parts to the compact arranged electrode points of two row, these two parts are relatively slided and then produce littler electrode points spacing.When sliding relatively, utilize outside this two parts parallel sliding of fine motion structure guiding, avoid on direction, sliding as far as possible, thereby guarantee the precision of electrode points spacing perpendicular to electrode plane.
Electrode points spacing of the present invention can surpass the preparation method of the microelectrode array of little machining accuracy, specifically comprises the steps:
At first positive-glue removing is also graphical on the Si sheet, and sputter noble metal Seed Layer adopts Lift-off technology to remove photoresist, and graphical Seed Layer constitutes the telegraph circuit layer;
And then deposition Parylene-C, for the second time graphical photoresist, use reactive ion etching (RIE) to carve Parylene-C and wear, expose electrode points, constitute the microelectrode array cover layer;
The substrate of Si sheet uses Ultra-Violet Laser between the compact arranged electrode points of two row, to be cut into two modules to microelectrode array as structure sheaf, makes things convenient for the relative slip of these two modules.
In the said method, the part that cutting process also can be used as in the reactive ion etching step is accomplished.
In the said method, two sliding blocks also can independently prepare through identical method.
The present invention utilizes in two relative sliding processes of module, and for the electrode points of addressing, specific, its electrode points spacing can minimum become original 0.866 times, obtains higher resolution ratio, and then obtains better electric physiology collection and effect of stimulation.In addition,, can also increase the electrode points spacing, this microelectrode array can be reused, carry out electric physiology collection and stimulation in other electrode points spacings through suitable sliding distance.
To sum up; The present invention is simple in structure; Easy to use, only need slide microelectrode array two parts relatively the electrode points spacing that surpasses this little machining accuracy limit that just can obtain during use according to application background; And then obtain higher resolution ratio, realize the collection and the stimulation of better electricity physiological signal.
Description of drawings
Fig. 1 is the structural representation of one embodiment of the invention.
The specific embodiment
Elaborate in the face of embodiments of the invention down, present embodiment is that prerequisite is implemented with technical scheme of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
The concrete preparation process of said microelectrode array is following:
The positive glue that at first on the Si sheet, gets rid of 5 μ m is also graphical, sputter noble metal (comprising Pt, Ir, Au etc.) Seed Layer, and the 100-15000 dust adopts Lift-off technology to remove photoresist, and graphical Seed Layer constitutes the telegraph circuit layer;
And then deposit the Parylene-C of 5 μ m, and for the second time graphical photoresist, use reactive ion etching (RIE) to carve Parylene-C and wear, expose electrode points, formation microelectrode array cover layer;
The substrate of Si sheet uses Ultra-Violet Laser between the compact arranged electrode points of two row, to be cut into two modules to microelectrode array as structure sheaf, makes things convenient for the relative slip of these two modules.
In the present embodiment, the part that cutting process also can be used as in the reactive ion etching step is accomplished.
In the present embodiment, these two sliding blocks also can independently prepare through identical method.
As shown in Figure 1, among the figure: the second microelectrode array module 2 of the first microelectrode array module 1 of well cutting, well cutting,, the distance 7 between the circle 6, adjacent electrode dot center, high by 8, in hang down point 9, electrode points center with in the hang down distance 10 of point.
Present embodiment comprises: the microelectrode array structure sheaf, telegraph circuit layer and the microelectrode array cover layer that set gradually and form composite construction; The microelectrode array cover layer directly contacts with tissue to be measured, is provided with the electrode points that little machining accuracy spacing was closely arranged and reached at least two row in the telegraph circuit layer.Three electrode points of said electrode points 3,4,5 are divided into two modules that can slide relatively, and promptly the first microelectrode array module 1 of well cutting, the second microelectrode array module 2 of well cutting form littler electrode points spacing when these two parts slide relatively.
In the present embodiment, described two electrode points 3,4 are on the first microelectrode array module 1 of well cutting, and another electrode points 5 is on the second microelectrode array module 2 of well cutting.First microelectrode array module 1 of described well cutting and the second microelectrode array module 2 of well cutting are attached on the hard substrate, and convenient slip is relatively organized the depths with insertion.
In the present embodiment, the radius of described first electrode points 3 is the full accuracy in the little process of this microelectrode array (refer generally to can obtain in the photoetching process the minimum circle of diameter), and common scope is 0.01 μ m-100 μ m.
In the present embodiment, the center of described three electrode points 3,4,5 constitutes the summit of equilateral triangle.
In the present embodiment, described circle 6 was meant the circle at other the electrode points center nearest apart from electrode points 3 centers, and the circle that the center constituted of other complete electrode points can appear in promptly little process middle distance electrode points 3 centers.
In the present embodiment, the distance 7 between the described adjacent electrode dot center refers to the radius of circle 6, and common scope is 0.04 μ m-400 μ m.
In the present embodiment, described high 8 refer to the leg-of-mutton height that is made up of three nearest electrode points centers.
In the present embodiment, the point 9 that hangs down in described refer to by three nearest electrode points centers constitute leg-of-mutton in the point that hangs down.
In the present embodiment, described microelectrode array cover layer is covered in and removes electrode points on the microelectrode array structure sheaf with external position.
In the present embodiment, described telegraph circuit layer is formed by electrode points, connecting line with the tie point of peripheral circuit.
In the present embodiment, the length x width x thickness of described microelectrode array structure sheaf is 5 * 5 * 0.001mm-150 * 150 * 1mm.
In the present embodiment, connecting live width in the described telegraph circuit layer is 10nm-1000 μ m; The cross-sectional area of electrode points is 1 μ m
2-10000 μ m
2
In the present embodiment, in the described telegraph circuit layer, only electrode points directly contacts and participates in electric physiology collection, stimulation with tissue to be measured.
In the present embodiment, the tectal length x width x thickness of described microelectrode array is 5 * 5 * 0.001mm-150 * 150 * 1mm.
The operation principle of present embodiment is: in order to obtain to surpass the electrode points spacing of the full accuracy in little process; The second microelectrode array module 2 of well cutting is slided left with respect to the first microelectrode array module 1 of well cutting; Second and third electrode point 4 and 5 between pitch smaller; And reach minimum when in the center of electrode points 5 arrives, hanging down point 9, the minimum range between the electrode points becomes 0.866 times of this distance by the distance 7 between the adjacent electrode dot center before sliding, promptly high 8.Sliding distance in the whole sliding process be the electrode points center with in the hang down distance 10 of point.If the addressing that keeps electrode points second and third electrode point 4 and 5 between, then the continuation slip will obtain bigger electrode points spacing.In addition, if the addressing of electrode points change into first and third electrode point 3 and 5 between, so only need change the direction of relative slip to the right into and getting final product.
As shown in table 1, it is as shown in the table for the used size of the application request of present embodiment.
One group of modular design parameter of the adjustable microelectrode array of table 1 electrode points spacing
| Microelectrode array structure sheaf (length x width x thickness) (mm) | 50×50×0.005 |
| Microelectrode array cover layer (length x width x thickness) (mm) | 50×50×0.005 |
| The radius of electrode points 3 (μ m) | 5 |
| The minimum diameter of a circle that can obtain in the photoetching process (μ m) | 10 |
| The radius (μ m) of |
20 |
| |
20 |
| High by 8 (μ m) | 17.32 |
| The electrode points center with in the hang down distance 10 (μ m) of |
10 |
Can find out from above embodiment; The microelectrode array that the present invention utilizes the electrode points spacing can surpass little machining accuracy carries out the collection and the stimulation of electricity physiological signal; Microelectrode array with respect to the conventional fixed spacing; Only need slide two modules of this microelectrode array relatively and just can obtain the microelectrode array that the electrode points spacing surpasses little machining accuracy, obtain higher resolution ratio, and then obtain better electric physiology collection and effect of stimulation.In addition,, can also increase the electrode points spacing, this microelectrode array can be reused, carry out electric physiology collection and stimulation in other electrode points spacings through suitable sliding distance.
Although content of the present invention has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited appended claim.
Claims (10)
1. an electrode points spacing can be above the microelectrode array of little machining accuracy; Comprise: the microelectrode array structure sheaf, telegraph circuit layer and the microelectrode array cover layer that set gradually and form composite construction; Said microelectrode array cover layer directly contacts with tissue to be measured; Be provided with at least two row in the telegraph circuit layer and closely arrange and reach the electrode points of little machining accuracy spacing, it is characterized in that, the compact arranged electrode points of said at least two row is cut into two modules that can slide relatively; Promptly the first microelectrode array module and the second microelectrode array module form littler electrode points spacing when this two module is slided relatively.
2. electrode points spacing according to claim 1 can surpass the microelectrode array of little machining accuracy, it is characterized in that the described first microelectrode array module and the second microelectrode array module are attached on the hard substrate.
3. electrode points spacing according to claim 1 and 2 can surpass the microelectrode array of little machining accuracy, it is characterized in that, the center of the electrode points on described two microelectrode array modules constitutes the summit of equilateral triangle.
4. electrode points spacing according to claim 3 can surpass the microelectrode array of little machining accuracy; It is characterized in that; The radius of described microelectrode array electrode points is the full accuracy in the little process of this microelectrode array; The circle that the diameter that promptly refers to can to obtain in the photoetching process is minimum, scope is 0.01 μ m-100 μ m.
5. electrode points spacing according to claim 4 can surpass the microelectrode array of little machining accuracy, it is characterized in that, the distance between the described adjacent electrode dot center, and scope is 0.04 μ m-400 μ m.
6. electrode points spacing according to claim 1 can surpass the microelectrode array of little machining accuracy, it is characterized in that, the minimum range between the described electrode points is become 0.866 times of this distance by the distance between the adjacent electrode dot center before sliding.
7. electrode points spacing according to claim 1 can surpass the microelectrode array of little machining accuracy, it is characterized in that, described microelectrode array cover layer is covered in and removes electrode points on the microelectrode array structure sheaf with external position.
8. can surpass the preparation method of the microelectrode array of little machining accuracy like the described electrode points spacing of claim 1-7, it is characterized in that, comprise the steps:
At first positive-glue removing is also graphical on the Si sheet, and sputter noble metal Seed Layer adopts Lift-off technology to remove photoresist, and graphical Seed Layer constitutes the telegraph circuit layer;
And then deposition Parylene-C, for the second time graphical photoresist, use reactive ion etching to carve Parylene-C and wear, expose electrode points, constitute the microelectrode array cover layer;
The substrate of Si sheet uses Ultra-Violet Laser between the compact arranged electrode points of two row, to be cut into two modules to microelectrode array as structure sheaf, makes things convenient for the relative slip of these two modules.
9. electrode points spacing as claimed in claim 8 can surpass the preparation method of the microelectrode array of little machining accuracy, it is characterized in that, said cutting process is perhaps accomplished as the part in the reactive ion etching step.
10. can surpass the preparation method of the microelectrode array of little machining accuracy like claim 8 or 9 described electrode points spacings, it is characterized in that, said two sliding blocks or independently prepare through identical method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108795753A (en) * | 2017-04-26 | 2018-11-13 | 苏州壹达生物科技有限公司 | A kind of device and method of encapsulation plane electrode chip |
| CN109461655A (en) * | 2018-09-21 | 2019-03-12 | 中国电子科技集团公司第五十五研究所 | Nitride high electronic migration rate transistor fabrication process with multi-gate structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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